Semiconductor heat treatment equipment and temperature control method thereof

Abstract

The invention provides semiconductor heat treatment equipment and a temperature control method thereof. The equipment comprises a coil, a cavity, a first temperature sensor, a second temperature sensor and a temperature controller, the coil is arranged around the cavity and provides a thermal field for the cavity, and the cavity is provided with a first temperature measuring hole and a second temperature measuring hole which are symmetrical relative to the center original point; the first temperature sensor is used for detecting the temperature of the cavity through the first temperature measuring hole and recording the temperature as first temperature; the second temperature sensor is used for detecting the temperature of the cavity through the second temperature measuring hole and recording the temperature as second temperature; the temperature controller is used for acquiring a first temperature and a second temperature, judging whether the central position of the coil deviates from the central point of the chamber based on the first temperature and / or the second temperature when the temperature of the chamber reaches a steady state, and if so, controlling the coil to translate along the central axis based on the first temperature and / or the second temperature; and the central position of the coil reaches the central point of the cavity. According to the invention, the uniformity of the temperature of the wafer area can be ensured.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor heat treatment device and a temperature control method thereof. Background Art

[0002] Epitaxial growth refers to the growth of a specific monolithic thin film on the basis of a wafer through an epitaxial process. The substrate wafer and the epitaxial thin film are collectively called an epitaxial wafer. At present, the main method used is chemical vapor deposition (CVD) for the growth of silicon carbide epitaxial layers. The specific chemical reaction is that SiH4 and C3H8 (C2H4) undergo a cracking reaction at high temperature (above 1600 degrees Celsius) and reduced pressure (about 100mbar) to generate Si atoms and C atoms, which then recombine on the surface of the wafer to generate SiC. Thermochemical distillation is widely used in the growth of epitaxial layers. Temperature is an important influencing factor, which has an important impact on its doping uniformity and film thickness uniformity. If the temperature deviates from the set process temperature, it will have a great negative impact on the process parameters.

[0003] The relevant wafer heating technology usually uses induction heating as the main heating method for silicon carbide epitaxy. Alternating current is passed through the coil to generate a corresponding magnetic field and magnetic flux. The chamber placed in the coil (such as a graphite part with a hollow barrel structure) generates an induced electromotive force, so that the eddy current flows through the chamber, and the wafer position is reserved at the center of the chamber. The reaction gas flows through the chamber from one end of the coil and is pumped away from the other end, resulting in a lower ambient temperature on the left and right sides of the chamber. When the chamber is in a low-pressure vacuum state, according to the principle of thermal radiation, the temperature on both sides of the coil is lower. When the wafer is at the center of the coil, the highest point in the temperature field coincides with the center of the wafer. However, since the chamber inside the coil is installed inside the coil in an incompletely fixed form, when it is manually installed and lacks reliable fixation, the wafer will deviate from the center of the coil. Therefore, in the process engineering of the relevant semiconductor equipment, it is impossible to ensure that the wafer is at the highest temperature in the chamber, and thus the temperature uniformity of the wafer area cannot be guaranteed. Summary of the invention

[0004] In view of this, the object of the present invention is to provide a semiconductor heat treatment equipment and a temperature control method thereof, which can ensure that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, ensuring the uniformity of the temperature of the wafer area.

[0005] In order to achieve the above purpose, the technical solution adopted by the embodiment of the present invention is as follows:

[0006] In a first aspect, an embodiment of the present invention provides a semiconductor heat treatment device, comprising: a coil, a chamber, a first temperature sensor, a second temperature sensor and a temperature controller; the chamber is used to place a wafer to be processed, the coil is arranged around the chamber and provides a thermal field for the chamber, the chamber is provided with a first temperature measuring hole and a second temperature measuring hole, the first temperature measuring hole and the second temperature measuring hole are symmetrical relative to the center origin of the chamber; the first temperature sensor is used to detect the temperature of the chamber through the first temperature measuring hole, which is recorded as the first temperature; the second temperature sensor is used to detect the temperature of the chamber through the second temperature measuring hole, which is recorded as the second temperature; the temperature controller is used to obtain the first temperature and the second temperature, when the temperature of the chamber reaches a steady state, based on the first temperature and / or the second temperature, it is judged whether the center position of the coil deviates from the center point of the chamber, if so, based on the first temperature and / or the second temperature, the coil is controlled to translate along the central axis until the center position of the coil reaches the center point of the chamber.

[0007] Furthermore, the temperature controller is also used to determine whether the first temperature is equal to the second temperature. If the first temperature is not equal to the second temperature, it is determined that the center position of the coil deviates from the center point of the chamber; based on the first temperature and the second temperature, the coil is controlled to translate along the central axis until the first temperature is equal to the second temperature, and it is determined that the center position of the coil reaches the center point of the chamber.

[0008] Further, the chamber includes a plurality of regions, and the number of coil turns in each of the regions is the same; the temperature controller stores a temperature gradient distribution curve when the temperature of the chamber reaches a steady state, and the temperature gradient distribution curve is the chamber temperature corresponding to each of the regions; the temperature controller is also used to obtain the region where the first temperature measuring hole on the chamber is located, recorded as the first setting region; determine the chamber temperature corresponding to the first setting region in the temperature gradient distribution curve, recorded as the first target temperature; determine whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber;

[0009] and / or,

[0010] The temperature controller is also used to obtain the area where the second temperature measuring hole on the chamber is located, recorded as the second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as the second target temperature; judge whether the second temperature is equal to the second target temperature, if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber.

[0011] Furthermore, the semiconductor heat treatment equipment further comprises: a motor, the motor is connected to the coil, and the motor is used to drive the coil to translate;

[0012] The temperature controller is further used to calculate the translation amount and translation direction of the coil based on the first target temperature and the first temperature; and to control the motor to rotate based on the translation amount and translation direction to drive the coil to translate until the center point of the coil coincides with the center point of the chamber;

[0013] and / or,

[0014] The temperature controller is also used to calculate the translation amount and translation direction of the coil based on the second target temperature and the second temperature; and control the rotation of the motor based on the translation amount and translation direction to drive the coil to translate until the center point of the coil coincides with the center point of the chamber.

[0015] Furthermore, the temperature controller is a programmable logic controller, and the programmable logic controller is respectively communicatively connected with the first temperature sensor, the second temperature sensor and the induction power supply of the coil.

[0016] In a second aspect, an embodiment of the present invention provides a temperature control method for semiconductor heat treatment equipment, characterized in that it is applied to the semiconductor heat treatment equipment according to any one of the first aspects, and the temperature control method includes:

[0017] Acquire a first temperature detected by the first temperature sensor, and acquire a second temperature detected by the second temperature sensor;

[0018] When the temperature of the chamber reaches a steady state, judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature;

[0019] If yes, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

[0020] Further, judging whether the center position of the coil of the wafer deviates from the center point of the chamber based on the first temperature and the second temperature includes:

[0021] determining whether the first temperature is equal to the second temperature, and if the first temperature is not equal to the second temperature, determining that the center position of the coil deviates from the center point of the chamber;

[0022] and / or,

[0023] The step of controlling the coil to translate along the central axis based on the first temperature and the second temperature until the center position of the coil reaches the center point of the chamber comprises:

[0024] When the first temperature is greater than the second temperature, controlling the coil to translate in a first direction until the first temperature is equal to the second temperature; wherein the first direction is the direction where the second temperature measuring hole is located;

[0025] When the first temperature is lower than the second temperature, the coil is controlled to translate in a second direction until the first temperature is equal to the second temperature; wherein the second direction is the direction where the first temperature measuring hole is located.

[0026] Furthermore, the temperature control method further comprises:

[0027] Calculating the skin depth of the chamber at a preset process temperature, obtaining the AC current value of the coil, dividing the chamber into a plurality of regions based on the number of turns of the coil, and calculating the heat source intensity of each region in the chamber based on the skin depth and the AC current value; wherein the number of turns of the coil in each region is the same;

[0028] The ambient temperatures at both ends of the chamber when the temperature of the chamber reaches a steady state are obtained, and the chamber temperatures of each of the regions are calculated based on the ambient temperatures and the heat source intensity of each of the regions to obtain a temperature gradient distribution curve of the chamber.

[0029] Further, the calculating the chamber temperature of each of the regions based on the ambient temperature and the heat source intensity of each of the regions includes:

[0030] Starting from a first area at any end of the chamber, calculating the chamber temperature of the first area when the process reaches a steady state based on the heat source intensity of the first area and the ambient temperature;

[0031] The chamber temperature of the first area is used as the ambient temperature of the next adjacent area, and the chamber temperature of the next area is calculated when the process reaches a steady state based on the ambient temperature of the next area and the heat source intensity of the next area, until the chamber temperature of the area where the center point of the chamber is located is calculated;

[0032] Based on the symmetry of the temperatures of each chamber from the first area to the area where the center point is located, the chamber temperatures of each area from the area where the center point of the chamber is located to the other end of the chamber are obtained.

[0033] Furthermore, the calculation formula of the chamber temperature is:

[0034]

[0035] Among them, T i1 is the chamber temperature of the ith region, F i is the heat source intensity of the ith region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the inner surface area of ​​the chamber, T i2 is the ambient temperature corresponding to the ith area, V i is the volume of the ith region.

[0036] Further, judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes:

[0037] Acquire the area where the first temperature measuring hole on the chamber is located, recorded as the first setting area; determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, recorded as the first target temperature; judge whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber;

[0038] and / or,

[0039] Obtain an area on the chamber where the second temperature measuring hole is located, recorded as a second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as a second target temperature; determine whether the second temperature is equal to the second target temperature, if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber.

[0040] Further, the semiconductor heat treatment equipment further includes a motor, the motor is connected to the coil, and the motor is used to drive the coil to translate; the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber, including:

[0041] Calculating the translation amount and translation direction of the coil based on the first target temperature and the first temperature; controlling the motor to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber;

[0042] and / or,

[0043] The translation amount and translation direction of the coil are calculated based on the second target temperature and the second temperature; and the motor is controlled to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber.

[0044] An embodiment of the present invention provides a semiconductor heat treatment device and a temperature control method thereof, wherein the semiconductor heat treatment device comprises: a coil, a chamber, a first temperature sensor, a second temperature sensor and a temperature controller; the chamber is used to place a wafer to be processed, the coil is arranged around the chamber and provides a thermal field for the chamber, a first temperature measuring hole and a second temperature measuring hole are arranged on the chamber, and the first temperature measuring hole and the second temperature measuring hole are symmetrical relative to the center origin of the chamber; the first temperature sensor is used to detect the temperature of the chamber through the first temperature measuring hole, which is recorded as the first temperature; the second temperature sensor is used to detect the temperature of the chamber through the second temperature measuring hole, which is recorded as the second temperature; the temperature controller is used to obtain the first temperature and the second temperature, and when the temperature of the chamber reaches a steady state, it is judged based on the first temperature and / or the second temperature whether the center position of the coil deviates from the center point of the chamber, and if so, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber. The present invention arranges two temperature sensors on the chamber, and when the temperature of the chamber reaches a steady state, determines whether the center position of the coil deviates from the center point of the chamber based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor. It can determine whether the center point of the wafer is located at the highest temperature point, and moves the coil when the wafer deviates from the center position of the coil so that the center position of the coil reaches the center point of the chamber to ensure that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, thereby ensuring the uniformity of temperature in the wafer area.

[0045] Other features and advantages of the embodiments of the present invention will be described in the following description, or some features and advantages can be inferred or determined without doubt from the description, or can be learned by implementing the above-mentioned techniques of the embodiments of the present invention.

[0046] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0048] Figure 1 A schematic diagram of the chamber structure of a related semiconductor heat treatment device is shown;

[0049] Figure 2a A front view of a chamber structure provided by an embodiment of the present invention is shown;

[0050] Figure 2b A side view of a chamber structure provided by an embodiment of the present invention is shown;

[0051] Figure 3 A chamber temperature distribution curve diagram of each area of ​​a chamber provided by an embodiment of the present invention is shown;

[0052] Figure 4 A flow chart of a temperature control method for semiconductor heat treatment equipment provided by an embodiment of the present invention is shown;

[0053] Figure 5 A schematic diagram of heat source intensity distribution in various areas of a chamber provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the present invention will be described below in conjunction with the drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0055] At present, induction heating is the main heating method for silicon carbide epitaxy. It has various advantages such as fast heating speed, high heating efficiency, fast startup, and energy saving, and is widely used in the semiconductor industry. During the silicon carbide epitaxy process, strict requirements are placed on the uniformity of temperature near the substrate and the accuracy of temperature. The coil, as a medium for generating a magnetic field, directly affects the distribution of the temperature field during the heating process.

[0056] See Figure 1 The chamber structure diagram of the related semiconductor heat treatment equipment shown in the figure is a graphite chamber. The graphite chamber is a hollow barrel structure, which is spliced ​​by two semicircles. A wafer placement position is reserved in the middle of the center line of the graphite. Since the current parallel air intake silicon carbide epitaxial equipment cannot directly measure the wafer temperature, the infrared thermometer is used to measure the temperature of the wafer. Figure 1 The temperature of the chamber is indirectly measured through the temperature measuring hole in the chamber, which is usually located directly above the wafer placement position. There is a coil on the outside of the graphite part, and the number of turns and spacing of the coil are fixed. When an alternating current is passed through the coil, a corresponding magnetic field and magnetic flux are generated, and the graphite part placed in the coil generates an induced electromotive force, which causes eddy current to flow through the graphite part. When the current flows through the graphite part, an opposite force is generated due to resistance, causing energy to pass through the graphite part in the form of heat. The related semiconductor heat treatment equipment technology also has the following disadvantages:

[0057] Disadvantage 1: Because the reaction gas comes from Figure 1The right side of the middle coil flows through the graphite piece and is pumped away from the left side of the coil. The ambient temperature on the left and right sides of the graphite piece is relatively low. When the chamber is in a low-pressure vacuum state, the temperature on both sides of the coil is relatively low according to the principle of thermal radiation. The flow rate of the reaction gas, the pressure of the chamber, and the suction force of the pump will affect the temperature uniformity at the center of the graphite piece. Since the position of the coil cannot be adjusted, the turn spacing and the number of turns of the coil are fixed, the temperature at the center of the graphite piece can only be adjusted by adjusting the size of the alternating current passing through the coil, which consumes electricity and increases the temperature adjustment time.

[0058] Disadvantage 2: Since the graphite part inside the coil is installed inside the coil in an incompletely fixed form, in the absence of reliable fixation, the center point of the heated chamber will deviate from the center position of the coil. When the coil position cannot be adjusted, the uniformity of the center temperature of the graphite part is affected.

[0059] Disadvantage 3: Parallel air intake SiC epitaxial equipment cannot directly measure the wafer temperature. It uses indirect measurement of the temperature of the graphite part directly above the wafer for temperature detection. The measured temperature will change with the change of the temperature field. Measuring the chamber temperature with a single temperature measuring hole cannot guarantee the reliability of the chamber temperature measurement.

[0060] This embodiment provides a semiconductor heat treatment device, characterized in that it includes: a coil, a chamber, a first temperature sensor, a second temperature sensor and a temperature controller;

[0061] The chamber is used to place the wafer to be processed. The coil is arranged around the chamber and provides a heat field for the chamber. Figure 2a The chamber structure front view and Figure 2b The side view of the chamber structure shown in the figure shows that the chamber is provided with a first temperature measuring hole 21 and a second temperature measuring hole 22, and the first temperature measuring hole 21 and the second temperature measuring hole 22 are symmetrical with respect to the center origin of the chamber; the position of the wafer 20 to be processed is set at a position so that the center point of the wafer 20 to be processed coincides with the center point of the chamber, that is, the center point of the chamber and the center point of the wafer are the same point.

[0062] The first temperature sensor is used to detect the temperature of the chamber through the first temperature measuring hole, which is recorded as the first temperature;

[0063] The second temperature sensor is used to detect the temperature of the chamber through the second temperature measuring hole, which is recorded as the second temperature;

[0064] The temperature controller is used to obtain a first temperature and a second temperature. When the temperature of the chamber reaches a steady state, it is determined based on the first temperature and / or the second temperature whether the center position of the coil deviates from the center point of the chamber. If so, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

[0065] After the process starts, current is passed through the coil to heat the chamber at a constant power. After a certain period of heating (such as 30 minutes of heating), the temperature of the chamber reaches the required process temperature. It is determined whether the fluctuation amplitude of the chamber temperature within the preset time is less than the set amplitude. If so, it is determined that the temperature of the chamber has reached a steady state. In a specific embodiment, the temperature of the chamber can be detected in real time based on the first temperature sensor and / or the second temperature sensor. When the temperature of the chamber reaches the set process temperature and the fluctuation amplitude within 1 minute is less than 0.2 degrees, it is determined that the temperature of the chamber has reached a steady state. The temperature of the chamber (i.e., the inner wall temperature of the chamber) is monitored based on the first temperature sensor and the second temperature sensor.

[0066] The inventors have found that when the temperature of the chamber reaches a steady state, the highest temperature point is at the center point of the coil. When the first temperature sensor and the second temperature sensor are equidistantly distributed on both sides of the center of the wafer and are symmetrical about the origin, if the center point of the chamber coincides with the center point of the coil, that is, when the center point of the wafer coincides with the center point of the coil, the temperature values ​​detected by the first temperature sensor and the second temperature sensor are equal.

[0067] In one embodiment, by determining whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal, it can be determined whether the center position of the coil deviates from the center point of the chamber, and further it can be determined whether the center point of the wafer deviates from the center position of the coil.

[0068] In another embodiment, a chamber temperature distribution curve graph can be obtained when the temperature of the chamber reaches a steady state. By judging whether the first temperature detected by the first temperature sensor or the second temperature detected by the second temperature sensor is reasonable based on the chamber temperature distribution curve graph, it can be judged whether the center position of the coil deviates from the center point of the chamber, and further it can be judged whether the center point of the wafer deviates from the center position of the coil.

[0069] The semiconductor heat treatment equipment provided in the present embodiment sets two temperature measuring holes on the chamber, and when the temperature of the chamber reaches a steady state, judges whether the center position of the coil deviates from the center point of the chamber based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor, so as to judge whether the center point of the wafer is located at the highest temperature point, and moves the coil when the wafer deviates from the center position of the coil so that the center position of the coil reaches the center point of the chamber, so as to ensure that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, thereby ensuring the uniformity of the temperature of the wafer area.

[0070] In one embodiment, the temperature controller provided in this embodiment is also used to determine whether the first temperature is equal to the second temperature. If the first temperature is not equal to the second temperature, it is determined that the center position of the coil deviates from the center point of the chamber; based on the first temperature and the second temperature, the coil is controlled to translate along the central axis until the first temperature is equal to the second temperature, and it is determined that the center position of the coil reaches the center point of the chamber.

[0071] When the temperature values ​​detected by the first temperature sensor and the second temperature sensor are not equal, it indicates that the center point of the chamber does not coincide with the center point of the coil, that is, the center point of the wafer deviates from the center position of the coil, and the coil is controlled to translate along the central axis (that is, the coil mounted on the outer side of the chamber is translated along the central axis of the chamber, and the distance between the coil and the outer wall of the chamber remains unchanged during the translation process) to translate the center position of the coil until the temperature values ​​detected by the first temperature sensor and the second temperature sensor are equal, and it is determined that the center position of the coil reaches the center point of the chamber, that is, the center position of the coil reaches the center point of the wafer, and the wafer reaches the highest temperature point.

[0072] In another embodiment, the chamber provided in this embodiment includes multiple areas, and the number of coil turns in each area is the same. The temperature controller stores a temperature gradient distribution curve when the temperature of the chamber reaches a steady state, and the temperature gradient distribution curve is the chamber temperature corresponding to each area; the coil is evenly divided into multiple areas based on the number of turns of the coil outside the chamber. For example, the chamber inside the coil with a total number of turns of 10 can be divided into 10 areas, and the number of turns of the coil in each area is 1. See, for example, Figure 3 The chamber temperature distribution curve of each area of ​​the chamber is shown. Figure 3 In the curve diagram, the horizontal axis is the region number, and the vertical axis is the chamber temperature (in K). Figure 3 It can be seen that the chamber temperature after the chamber reaches steady state is an axisymmetric nonlinear distribution, and the highest temperature point is at the center of the coil, that is, the center of the chamber and the wafer. Therefore, when the two temperature measurement points are equidistantly distributed on both sides of the center of the chamber and symmetrical about the origin, if the center of the coil coincides with the center of the chamber, the temperatures measured by the two temperature measurement points are equal, and the position of the coil can be adjusted by the temperature difference between the two temperature measurement points, so that the highest temperature of the temperature field can coincide with the center of the wafer.

[0073] The temperature controller is also used to obtain the area where the first temperature measuring hole on the chamber is located, recorded as the first setting area; determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, recorded as the first target temperature; judge whether the first temperature is equal to the first target temperature, if the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber; the above-mentioned first target temperature is the temperature that the first temperature sensor should detect when the center point of the chamber coincides with the center point of the coil.

[0074] and / or,

[0075] The temperature controller is also used to obtain the area where the second temperature measuring hole on the chamber is located, recorded as the second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as the second target temperature; determine whether the second temperature is equal to the second target temperature, and if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber. The above-mentioned second target temperature is the temperature that the second temperature sensor should detect when the center point of the chamber coincides with the center point of the coil.

[0076] by Figure 3 Taking the chamber temperature distribution curve shown in as an example, assuming that the first setting area of ​​the first temperature measuring hole is area 8, and the second setting area of ​​the second temperature measuring hole is area 2, it can be seen from the chamber temperature distribution curve that when the center point of the chamber coincides with the center point of the coil, the first setting area 8 of the first temperature measuring hole corresponds to a first target temperature of 1550 degrees in the temperature gradient distribution curve, and the second setting area 2 of the second temperature measuring hole corresponds to a second target temperature of 1550 degrees in the temperature gradient distribution curve. Therefore, when the temperature of the chamber reaches a steady state, it is determined whether the first temperature detected by the first temperature sensor is equal to the first target temperature. If the first temperature is not equal to the first target temperature, it indicates that the coil position has deviated and the center point of the chamber and the center point of the coil do not coincide; it is determined whether the second temperature detected by the second temperature sensor is equal to the second target temperature. If the second temperature is not equal to the second target temperature, it indicates that the coil position has deviated and the center point of the chamber and the center point of the coil do not coincide. If the first temperature detected by the first temperature sensor is equal to the second temperature detected by the second temperature sensor and both are equal to 1550 degrees, it indicates that the center point of the chamber coincides with the center point of the coil and the coil position has not shifted.

[0077] In one embodiment, the semiconductor heat treatment equipment provided in this embodiment further includes: a motor, the motor is connected to the coil, and the motor is used to drive the coil to translate;

[0078] In one embodiment, the temperature controller is further used to calculate the translation amount and translation direction of the coil based on the first target temperature and the first temperature; and to control the motor to rotate based on the translation amount and translation direction to drive the coil to translate until the center point of the coil coincides with the center point of the chamber;

[0079] When the first temperature actually detected by the first temperature sensor is greater than the first target temperature, it indicates that the center point of the coil is closer to the first temperature measuring hole, resulting in the temperature detected by the first temperature sensor being higher than the first target temperature that should be detected when the center of the coil is not deviated, and the coil is controlled to translate toward the second temperature measuring hole (i.e., the direction in which the center point of the chamber points to the second temperature measuring hole), and the translation amount is related to the difference between the first temperature and the first target temperature. The larger the difference, the larger the translation amount; conversely, if the first temperature is lower than the first chamber temperature, it indicates that the center point of the coil is closer to the second temperature measuring hole, resulting in the temperature detected by the first temperature sensor being lower than the first target temperature that should be detected when the center of the coil is not deviated, and the coil is controlled to translate toward the first temperature measuring hole (i.e., the direction in which the center point of the chamber points to the first temperature measuring hole), and the translation amount is related to (the difference between the first chamber temperature and the first temperature). The larger the difference between the first chamber temperature and the first temperature, the larger the translation amount.

[0080] For example, Figure 3 Taking the chamber temperature distribution curve shown in FIG. 1 as an example, assuming that the first temperature measuring hole is set in area 8, when the center point of the chamber coincides with the center point of the coil, as shown in FIG. Figure 3 As shown, the first target temperature that the first temperature sensor should detect is 1550°C. If the first temperature detected by the first temperature sensor is 1600°C when the chamber temperature reaches a steady state, it indicates that Figure 3 The curve in the figure is translated by one area toward the first temperature measuring hole (the direction from area 2 to area 8), that is, the chamber is translated by one area toward the second temperature measuring hole. The center of the coil is close to the first temperature measuring hole. The control coil is translated by one area length (such as 30 mm) toward the second temperature measuring hole (the direction from area 8 to area 2) to restore the first temperature and the second temperature to 1550°C. The translation direction of the coil can be controlled by controlling the forward and reverse rotation of the motor.

[0081] In another embodiment, the temperature controller is also used to calculate the translation amount and translation direction of the coil based on the second target temperature and the second temperature; based on the translation amount and translation direction, the motor rotation is controlled to drive the coil to translate until the center point of the coil coincides with the center point of the chamber.

[0082] When the second temperature actually detected by the second temperature sensor is greater than the second target temperature, it indicates that the center point of the coil is closer to the second temperature measuring hole and farther from the first temperature measuring hole, resulting in the second temperature detected by the second temperature sensor being higher than the second target temperature that should be detected when the center of the coil is not deviated, and the coil is controlled to translate toward the first temperature measuring hole, and the translation amount is related to (the difference between the second temperature and the second chamber temperature). The greater the difference between the second temperature and the second chamber temperature, the greater the translation amount; conversely, if the second temperature is less than the second target temperature, it indicates that the center point of the coil is closer to the first temperature measuring hole and farther from the second temperature measuring hole, resulting in the second temperature detected by the second temperature sensor being lower than the second target temperature that should be detected when the center of the coil is not deviated, and the coil is controlled to translate toward the second temperature measuring hole, and the translation amount is related to (the difference between the second chamber temperature and the second temperature). The greater the difference between the second chamber temperature and the second temperature, the greater the translation amount.

[0083] For example, Figure 3 Taking the chamber temperature distribution curve shown in FIG. 1 as an example, assuming that the second temperature measuring hole is set in area 2, when the center of the chamber coincides with the center of the coil, as shown in FIG. Figure 3 As shown, the second target temperature that the second temperature sensor should detect is 1550°C. If the second temperature detected by the second temperature sensor is 1500°C when the chamber temperature reaches a steady state, it indicates that Figure 3 The curve in is translated by one area toward the first temperature measuring hole (i.e., the direction in which area 2 points to area 8), that is, the chamber is translated by one area toward the second temperature measuring hole, the center of the coil is closer to the first temperature measuring hole, and the center of the coil is farther from the second temperature measuring hole. The control coil is translated by one area length (such as 30 mm) toward the second temperature measuring hole (i.e., the direction in which area 8 points to area 2) to restore the first temperature and the second temperature to 1550°C.

[0084] In one embodiment, the temperature controller provided in this embodiment is a programmable logic controller, which is respectively connected to the first temperature sensor, the second temperature sensor and the induction power supply of the coil in communication, so that the first temperature detected by the first temperature sensor, the second temperature detected by the second temperature sensor, and the alternating current I and the current frequency f passing through the coil can be obtained.

[0085] The semiconductor heat treatment equipment provided in this embodiment can adjust the translation coil according to the temperature distribution curve in the chamber and the temperature detected by the two temperature sensors, so as to ensure that the highest temperature point at the center of the coil coincides with the center of the wafer, thereby ensuring the temperature uniformity during wafer growth; the chamber temperature control is simple and the calculation speed is fast, which improves the temperature adjustment efficiency; and the use of two temperature sensors to detect the temperature in the chamber can make temperature measurement more effective and reliable, and the positions of the two temperature measuring holes can be used as judgment conditions for adjusting the coil position, thereby ensuring the temperature uniformity of the wafer area.

[0086] Corresponding to the semiconductor heat treatment equipment provided in the above embodiment, this embodiment provides a temperature control method for semiconductor heat treatment equipment, which is applied to the semiconductor heat treatment equipment provided in the above embodiment, see Figure 4 The temperature control method flow chart of the semiconductor heat treatment equipment shown in the figure mainly includes the following steps:

[0087] Step S402, obtaining a first temperature detected by a first temperature sensor, and obtaining a second temperature detected by a second temperature sensor;

[0088] The temperature controller is connected to the first temperature sensor and the second temperature sensor for communication respectively, and acquires the first temperature detected by the first temperature sensor and the second temperature detected by the second temperature sensor in real time.

[0089] Step S404, when the temperature of the chamber reaches a steady state, judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature;

[0090] After the process starts, current is passed through the coil to heat the chamber at constant power. After a certain period of heating (such as 30 minutes), the temperature of the chamber reaches the required process temperature. It is determined whether the fluctuation amplitude of the chamber temperature within the preset time is less than the set amplitude. If so, it is determined that the temperature of the chamber has reached a steady state.

[0091] When the temperature of the chamber reaches a steady state, when the center point of the chamber coincides with the center point of the coil, the temperature values ​​detected by the first temperature sensor and the second temperature sensor are equal. In one embodiment, by determining whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal, it can be determined whether the center position of the coil deviates from the center point of the chamber, and further it can be determined whether the center point of the wafer deviates from the center position of the coil.

[0092] In another embodiment, by judging whether the first temperature detected by the first temperature sensor or the second temperature detected by the second temperature sensor is reasonable based on the chamber temperature distribution curve, it can be judged whether the center position of the coil deviates from the center point of the chamber, and further it can be judged whether the center point of the wafer deviates from the center position of the coil.

[0093] Step S406: if yes, control the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

[0094] In one embodiment, the coil is controlled to translate along the central axis based on the first temperature and the second temperature until the first temperature is equal to the second temperature, and it is determined that the center position of the coil has reached the center point of the chamber; in another embodiment, a chamber temperature distribution curve diagram can be obtained when the temperature of the chamber reaches a steady state, and the coil is controlled to translate along the central axis based on the first temperature or the second temperature, and when the first temperature or the second temperature is equal to the corresponding temperature in the chamber temperature distribution curve diagram, it is determined that the center position of the coil has reached the center point of the chamber.

[0095] The temperature control method of the semiconductor heat treatment equipment provided in the present embodiment sets two temperature measuring holes on the chamber, and when the temperature of the chamber reaches a steady state, judges whether the center position of the coil deviates from the center point of the chamber based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor, so as to judge whether the center point of the wafer is located at the highest temperature point, and moves the coil when the wafer deviates from the center position of the coil so that the center position of the coil reaches the center point of the chamber to ensure that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, thereby ensuring the uniformity of the temperature of the wafer area.

[0096] In one embodiment, this embodiment provides a specific implementation method for judging whether the center position of the coil of the wafer deviates from the center point of the chamber based on the first temperature and the second temperature: judging whether the first temperature is equal to the second temperature; if the first temperature is not equal to the second temperature, determining that the center position of the coil deviates from the center point of the chamber.

[0097] In one embodiment, this embodiment provides an implementation method of controlling the coil to translate along the central axis based on the first temperature and the second temperature until the center position of the coil reaches the center point of the chamber, which can be specifically performed with reference to the following steps:

[0098] Step (1): when the first temperature is greater than the second temperature, the control coil is translated in a first direction until the first temperature is equal to the second temperature; wherein the first direction is the direction in which the second temperature measuring hole is located.

[0099] If the first temperature is greater than the second temperature, it indicates that the temperature detected by the first temperature sensor is higher, and the center point of the coil is biased toward the direction of the first temperature measuring hole. The control coil is translated toward the direction of the second temperature measuring hole (that is, the direction in which the area where the first temperature measuring hole is located points to the direction in which the second temperature measuring hole is located) so that the first temperature is equal to the second temperature.

[0100] by Figure 2bTaking the chamber shown as an example, when the first temperature is greater than the second temperature, it indicates that the center point of the coil is closer to the first temperature measuring hole 21, and the center point of the coil is on the right side of the center point of the chamber. The control coil is translated toward the direction where the second temperature measuring hole is located, that is, the control coil is translated to the left until the first temperature is equal to the second temperature, and the center point of the wafer coincides with the center point of the coil.

[0101] Step (2): When the first temperature is lower than the second temperature, the control coil is translated in a second direction until the first temperature is equal to the second temperature; wherein the second direction is the direction in which the first temperature measuring hole is located.

[0102] If the first temperature is lower than the second temperature, it indicates that the temperature detected by the second temperature sensor is higher and the center point of the coil is closer to the second temperature measuring hole. The control coil is translated toward the direction of the first temperature measuring hole to make the first temperature equal to the second temperature.

[0103] by Figure 2b Taking the chamber shown as an example, when the first temperature is lower than the second temperature, it indicates that the center point of the coil is closer to the second temperature measuring hole 22, and the center point of the coil is on the left side of the center point of the chamber. The control coil is translated toward the direction of the first temperature measuring hole 21, that is, the control coil is translated to the right, until the first temperature is equal to the second temperature, and the center point of the wafer coincides with the center point of the coil.

[0104] In one embodiment, in order to prove that the highest temperature point is at the center of the coil, the method provided in this embodiment further includes the following steps:

[0105] Step 1): Calculate the skin depth of the chamber at a preset process temperature, obtain the AC current value of the coil, divide the chamber into multiple areas based on the number of turns of the coil, and calculate the heat source intensity of each area in the chamber based on the skin depth and the AC current value; wherein the number of turns of the coil in each area is the same;

[0106] The temperature field of the induction coil is analyzed to determine the highest temperature position in the chamber. First, the magnetic field strength of the chamber is analyzed. The calculation formula for the magnetic field strength acting on the chamber is:

[0107]

[0108] Where n is the number of turns of the induction coil, and Z0 is the curling length of the induction coil. The eddy current density acting on the inner surface of the chamber is:

[0109]

[0110] Among them, δ m0 is the eddy current density on the chamber surface, Δ is the skin depth, H m0 is the magnetic field strength, r is the radius of the measured point, and r0 is the cylindrical radius of the chamber.

[0111] The calculation formula for skin depth is:

[0112]

[0113] Where ω is the angular frequency (ω = 2πf (rad / s), frequency f = 4900 Hz), μ is the magnetic permeability (μ = 4π*10 7 ), γ is the electrical conductivity (such as 83333 S / m).

[0114] As the radius changes, the calculation formula for the eddy current density of the measured point is:

[0115]

[0116] When considering a small area ds on a radius r, the calculation formula for the eddy current passing through the small area is:

[0117] dI r =δ mr *dS (Formula 5)

[0118] The calculation formula for the power generated by eddy current is:

[0119]

[0120] Here, dR is the effective resistance value of the material through which the eddy current flows in a small area, and J is a conversion parameter (J=4.18 cal / w).

[0121] Based on the above formulas 5 and 6, the heat source intensity can be calculated. The chamber is evenly divided into multiple areas based on the number of coil turns. The number of coil turns in each area is the same. For example, when the number of coil turns is 30, if the chamber is divided into 10 areas, the number of coil turns in each area is 3; when the number of coil turns is 10, if the chamber is divided into 10 areas, the number of coil turns in each area is n. i =1, the curling length Z of the induction coil in each area i =30mm, then the calculation formula for the heat source intensity of the i-th area of ​​the chamber is:

[0122]

[0123] Where ρ is the resistivity of the chamber material, I is the AC current flowing into the coil, and F i is the heat source intensity of the ith region.

[0124] Since the number of coil turns in each area is the same and the coil length is constant, it can be concluded through simulation calculation that the heat source intensity in each area is equal. Assuming the chamber thickness is 15mm and the measured point r=0.085m, see Figure 5The heat source intensity distribution diagram of each area in the chamber is shown in the figure. It can be calculated that F1=F2=F3=…=F10=3.9511*10 4 W / m 3 , that is, the heat source intensity in each area of ​​the chamber is the same.

[0125] Step 3): Obtain the ambient temperature at both ends of the chamber when the temperature of the chamber reaches a steady state, calculate the chamber temperature of each area based on the ambient temperature and the heat source intensity of each area, and obtain the temperature gradient distribution curve of the chamber.

[0126] Calculate the heat of each area based on the intensity of the heat source in each area:

[0127] Q i =F*V i *t (Formula 8)

[0128] Among them, Q i is the heat of the ith region, V i is the volume of the ith region, and t is the heating time.

[0129] In the absence of any external interference, the heat source intensity inside the chamber is stable, and the energy inside the chamber is uniform. It is necessary to consider the impact of the ambient temperature on the temperature field inside the chamber. The impact of the chamber environment on the chamber can be simulated by calculating the heat loss using the following formula 9. When the ambient temperature and the temperature inside the chamber are in equilibrium, the temperature before and after the chamber is stable, and the heat generated by the chamber is equal to the heat absorbed by the chamber before and after.

[0130]

[0131] Wherein, Q is the change in chamber ambient heat caused by thermal radiation, σ is the Stokes constant, is the thermal emissivity of the chamber surface, A is the inner surface area of ​​the chamber, T2 is the ambient temperature, and T1 is the chamber temperature after reaching steady state (i.e., the inner surface temperature of the chamber).

[0132] Assuming the heating time t = 1s, the calculation formula for the chamber temperature is:

[0133]

[0134] In a specific implementation, this embodiment provides an implementation for calculating the chamber temperature of each area based on the ambient temperature and the heat source intensity of each area, which can be performed by referring to the following steps:

[0135] Step 1, starting from the first area at either end of the chamber, calculating the chamber temperature of the first area when the process reaches a steady state based on the heat source intensity and the ambient temperature of the first area;

[0136] Starting from the first area at one end of the chamber, Figure 2b For example, when the number of coil turns is 10, the chamber can be divided into 10 areas. Figure 2b Starting from the first area at the leftmost end of the middle chamber, the calculation formula for the chamber temperature of the first area is:

[0137]

[0138] Among them, T 11 is the chamber temperature of the first region, F1 is the heat source intensity of the first region, σ is the Stokes constant, ε is the chamber surface thermal emissivity, A is the inner surface area of ​​the chamber, T 12 is the ambient temperature corresponding to the first region (i.e., the ambient temperature at both ends of the chamber, which can be obtained based on actual detection by the thermometer), and V1 is the volume of the first region.

[0139] Step 2, taking the chamber temperature of the first area as the ambient temperature of the next adjacent area, and calculating the chamber temperature of the next area when the process reaches a steady state based on the ambient temperature of the next area and the heat source intensity of the next area, until the chamber temperature of the area where the center point of the chamber is located is calculated;

[0140] The chamber temperature of the first zone is taken as the ambient temperature of the next adjacent zone, that is, T 22 =T 11 , the calculation formula for the chamber temperature of the next area (i.e. the second area) is:

[0141]

[0142] Among them, T 21 is the chamber temperature of the second region, F2 is the heat source intensity of the first region, T 22 is the ambient temperature corresponding to the second region (i.e., the chamber temperature of the first region is taken as the ambient temperature of the adjacent second region), and V2 is the volume of the second region.

[0143] The chamber temperature of the second area is used as the ambient temperature of the adjacent third area, and so on, and the chamber temperatures of each area from the first area to the area where the center point of the chamber is located are calculated in sequence.

[0144]

[0145] Among them, T i1 is the chamber temperature of the ith region, F i is the heat source intensity of the ith region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the inner surface area of ​​the chamber, T i2 is the ambient temperature corresponding to the ith area, Vi is the volume of the ith region.

[0146] Step 3, based on the symmetry of the chamber temperatures from the first area at one end of the chamber to the area at the center point, obtain the chamber temperatures of the areas from the area at the center point of the chamber to the other end of the chamber.

[0147] Due to the symmetry of the chamber temperature, a chamber temperature curve graph from the first area to the area where the center point of the chamber is located can obtain a chamber temperature curve graph of the other half area that is symmetrical.

[0148] When the chamber reaches a steady state, see Figure 3 The chamber temperature distribution curve of each area of ​​the chamber is shown. Figure 3 In the curve diagram, the horizontal axis is the region number, and the vertical axis is the chamber temperature (in K). Figure 3 It can be seen that the temperature model of the chamber after reaching steady state is an axisymmetric nonlinear distribution, and the highest temperature point is at the center of the coil, that is, the center of the chamber and the wafer. Therefore, when the two temperature measuring holes are equidistantly distributed on both sides of the center of the chamber and symmetrical about the origin, when the center of the coil coincides with the center of the chamber, the temperatures measured by the two temperature sensors are equal.

[0149] In one embodiment, this embodiment provides two implementations for determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature:

[0150] In one embodiment, an area where a first temperature measuring hole on the chamber is located is obtained, recorded as a first setting area; a chamber temperature corresponding to the first setting area in a temperature gradient distribution curve is determined, recorded as a first target temperature; it is determined whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, it is determined that the center position of the coil deviates from the center point of the chamber;

[0151] The setting position of the above-mentioned temperature measuring hole on the chamber is usually unchanged. The area where the first temperature measuring hole is located is obtained, recorded as the first setting area, and the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve is determined, that is, when the chamber temperature reaches a steady state, the temperature that the first temperature sensor should theoretically detect when the center point of the coil coincides with the center point of the chamber, recorded as the first target temperature. If the first temperature is equal to the first target temperature, it is determined that the center position of the coil does not deviate from the center point of the chamber, and the wafer is located at the highest temperature point.

[0152] In another embodiment, the area where the second temperature measuring hole on the chamber is located is obtained and recorded as the second setting area; the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve is determined and recorded as the second target temperature; it is judged whether the second temperature is equal to the second target temperature, and if the second temperature is not equal to the second target temperature, it is determined that the center position of the coil deviates from the center point of the chamber.

[0153] The area where the second temperature measuring hole is located is obtained, recorded as the second setting area, and the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve is determined, that is, when the chamber temperature reaches a steady state, the temperature that the second temperature sensor should theoretically detect when the center point of the coil coincides with the center point of the chamber, recorded as the second target temperature. If the second temperature is equal to the second target temperature, it is determined that the center position of the coil does not deviate from the center point of the chamber, and the wafer is located at the highest temperature point.

[0154] In one embodiment, the semiconductor heat treatment equipment provided in this embodiment further includes a motor, which is connected to the coil, and the motor is used to drive the coil to translate. This embodiment provides two implementation methods for controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber, which can be specifically implemented with reference to the following implementation methods 1 and 2:

[0155] Implementation method 1:

[0156] The translation amount and translation direction of the coil are calculated based on the first target temperature and the first temperature; and the motor is controlled to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber.

[0157] When the first temperature actually detected by the first temperature sensor is greater than the first target temperature, it indicates that the center point of the coil is closer to the first temperature measuring hole, resulting in the temperature detected by the first temperature sensor being higher than the first target temperature that should be detected when the center of the coil is not deviated, and the coil is controlled to translate toward the second temperature measuring hole (i.e., the direction in which the center point of the chamber points to the second temperature measuring hole), and the translation amount is related to the difference between the first temperature and the first target temperature. The larger the difference, the larger the translation amount; conversely, if the first temperature is lower than the first chamber temperature, it indicates that the center point of the coil is closer to the second temperature measuring hole, resulting in the temperature detected by the first temperature sensor being lower than the first target temperature that should be detected when the center of the coil is not deviated, and the coil is controlled to translate toward the first temperature measuring hole (i.e., the direction in which the center point of the chamber points to the first temperature measuring hole), and the translation amount is related to (the difference between the first chamber temperature and the first temperature). The larger the difference, the larger the translation amount.

[0158] Implementation method 2:

[0159] The translation amount and translation direction of the coil are calculated based on the second target temperature and the second temperature; and the motor is controlled to rotate based on the translation amount and the translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber.

[0160] When the second temperature actually detected by the second temperature sensor is greater than the second target temperature, it indicates that the center point of the coil is closer to the second temperature measuring hole and farther from the first temperature measuring hole, resulting in the second temperature detected by the second temperature sensor being higher than the second target temperature that should be detected when the center of the coil is not deviated, and the coil is controlled to translate toward the first temperature measuring hole, and the translation amount is related to (the difference between the second temperature and the second chamber temperature). The larger the difference, the larger the translation amount; conversely, if the second temperature is lower than the second target temperature, it indicates that the center point of the coil is closer to the first temperature measuring hole and farther from the second temperature measuring hole, resulting in the second temperature detected by the second temperature sensor being lower than the second target temperature that should be detected when the center of the coil is not deviated, and the coil is controlled to translate toward the second temperature measuring hole, and the translation amount is related to (the difference between the second chamber temperature and the second temperature). The larger the difference, the larger the translation amount.

[0161] The temperature control method of the semiconductor heat treatment equipment provided in this embodiment can adjust the translation coil according to the temperature distribution curve in the chamber and the temperature detected by two temperature sensors, so as to ensure that the highest temperature point at the center of the coil coincides with the center of the wafer, thereby ensuring the temperature uniformity during wafer growth; the chamber temperature control is simple and the calculation speed is fast, which improves the temperature adjustment efficiency; and the use of two temperature sensors to detect the temperature in the chamber can make temperature measurement more effective and reliable, and the positions of the two temperature measuring holes can be used as judgment conditions for adjusting the coil position, thereby ensuring the temperature uniformity of the wafer area.

[0162] The implementation principle and technical effects of the method provided in this embodiment are the same as those of the aforementioned embodiments. For the sake of brief description, for matters not mentioned in the method embodiment, reference may be made to the corresponding contents in the aforementioned device embodiment.

[0163] An embodiment of the present invention provides a computer-readable medium, wherein the computer-readable medium stores computer-executable instructions. When the computer-executable instructions are called and executed by a processor, the computer-executable instructions prompt the processor to implement the method described in the above embodiment.

[0164] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the system described above can refer to the corresponding process in the aforementioned embodiment, and will not be repeated here.

[0165] The computer program product of the temperature control method of semiconductor heat treatment equipment provided in the embodiment of the present invention includes a computer-readable storage medium storing program code. The instructions included in the program code can be used to execute the method described in the previous method embodiment. The specific implementation can be referred to the method embodiment, which will not be repeated here.

[0166] In addition, in the description of the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0167] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc., which can store program codes.

[0168] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0169] Finally, it should be noted that the above-described embodiments are only specific implementations of the present invention, which are used to illustrate the technical solutions of the present invention, rather than to limit them. The protection scope of the present invention is not limited thereto. Although the present invention is described in detail with reference to the above-described embodiments, ordinary technicians in the field should understand that any technician familiar with the technical field can still modify the technical solutions recorded in the above-described embodiments within the technical scope disclosed by the present invention, or can easily think of changes, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A semiconductor heat treatment device, characterized in that: include: a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller; The chamber is used to place the wafer to be processed, the coil is arranged around the chamber and provides a thermal field for the chamber, a first temperature measuring hole and a second temperature measuring hole are arranged on the chamber, and the first temperature measuring hole and the second temperature measuring hole are symmetrical relative to the central origin of the chamber; The first temperature sensor is used to detect the temperature of the chamber through the first temperature measuring hole, which is recorded as the first temperature; The second temperature sensor is used to detect the temperature of the chamber through the second temperature measuring hole, which is recorded as the second temperature; The temperature controller is used to obtain the first temperature and the second temperature. When the temperature of the chamber reaches a steady state, it is determined based on the first temperature and / or the second temperature whether the center position of the coil deviates from the center point of the chamber. If so, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

2. The semiconductor heat treatment equipment according to claim 1, characterized in that: The temperature controller is also used to determine whether the first temperature is equal to the second temperature, and if the first temperature is not equal to the second temperature, determine that the center position of the coil deviates from the center point of the chamber; The coil is controlled to translate along the central axis based on the first temperature and the second temperature until the first temperature is equal to the second temperature, and it is determined that the center position of the coil reaches the center point of the chamber.

3. The semiconductor heat treatment equipment according to claim 1, characterized in that: The chamber includes a plurality of regions, and the number of coil turns in each of the regions is the same. The temperature controller stores a temperature gradient distribution curve when the temperature of the chamber reaches a steady state, and the temperature gradient distribution curve is the chamber temperature corresponding to each of the regions; The temperature controller is further used to obtain the area where the first temperature measuring hole is located on the chamber, recorded as the first setting area; determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, recorded as the first target temperature; determine whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber; and / or, The temperature controller is also used to obtain the area where the second temperature measuring hole on the chamber is located, recorded as the second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as the second target temperature; judge whether the second temperature is equal to the second target temperature, if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber.

4. The semiconductor heat treatment equipment according to claim 3, characterized in that: Also includes: A motor, the motor is connected to the coil, and the motor is used to drive the coil to translate; The temperature controller is further used to calculate the translation amount and translation direction of the coil based on the first target temperature and the first temperature; and to control the motor to rotate based on the translation amount and translation direction to drive the coil to translate until the center point of the coil coincides with the center point of the chamber; and / or, The temperature controller is also used to calculate the translation amount and translation direction of the coil based on the second target temperature and the second temperature; and control the rotation of the motor based on the translation amount and translation direction to drive the coil to translate until the center point of the coil coincides with the center point of the chamber.

5. The semiconductor heat treatment equipment according to claim 1, characterized in that: The temperature controller is a programmable logic controller, and the programmable logic controller is respectively connected to the first temperature sensor, the second temperature sensor and the induction power supply of the coil for communication.

6. A temperature control method for semiconductor heat treatment equipment, characterized in that: Applied to the semiconductor heat treatment equipment according to any one of claims 1 to 5, the temperature control method comprises: Acquire a first temperature detected by the first temperature sensor, and acquire a second temperature detected by the second temperature sensor; When the temperature of the chamber reaches a steady state, judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature; If yes, the coil is controlled to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

7. The method according to claim 6, characterized in that The determining, based on the first temperature and the second temperature, whether the center position of the coil of the wafer deviates from the center point of the chamber comprises: determining whether the first temperature is equal to the second temperature, and if the first temperature is not equal to the second temperature, determining that the center position of the coil deviates from the center point of the chamber; and / or, The step of controlling the coil to translate along the central axis based on the first temperature and the second temperature until the center position of the coil reaches the center point of the chamber comprises: When the first temperature is greater than the second temperature, controlling the coil to translate in a first direction until the first temperature is equal to the second temperature; wherein the first direction is the direction where the second temperature measuring hole is located; When the first temperature is lower than the second temperature, the coil is controlled to translate in a second direction until the first temperature is equal to the second temperature; wherein the second direction is the direction where the first temperature measuring hole is located.

8. The method according to claim 6, characterized in that Also includes: Calculating the skin depth of the chamber at a preset process temperature, obtaining the AC current value of the coil, dividing the chamber into a plurality of regions based on the number of turns of the coil, and calculating the heat source intensity of each region in the chamber based on the skin depth and the AC current value; wherein the number of turns of the coil in each region is the same; The ambient temperatures at both ends of the chamber when the temperature of the chamber reaches a steady state are obtained, and the chamber temperatures of each of the regions are calculated based on the ambient temperatures and the heat source intensity of each of the regions to obtain a temperature gradient distribution curve of the chamber.

9. The method according to claim 8, characterized in that The calculating the chamber temperature of each of the regions based on the ambient temperature and the heat source intensity of each of the regions comprises: Starting from a first area at any end of the chamber, calculating the chamber temperature of the first area when the process reaches a steady state based on the heat source intensity of the first area and the ambient temperature; The chamber temperature of the first area is used as the ambient temperature of the next adjacent area, and the chamber temperature of the next area is calculated when the process reaches a steady state based on the ambient temperature of the next area and the heat source intensity of the next area, until the chamber temperature of the area where the center point of the chamber is located is calculated; Based on the symmetry of the temperatures of each chamber from the first area to the area where the center point is located, the chamber temperatures of each area from the area where the center point of the chamber is located to the other end of the chamber are obtained.

10. The method according to claim 9, characterized in that The calculation formula of the chamber temperature is: Among them, T i1 is the chamber temperature of the ith region, F i is the heat source intensity of the ith region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the inner surface area of ​​the chamber, T i2 is the ambient temperature corresponding to the ith region, V i is the volume of the ith region.

11. The method according to claim 8, characterized in that The determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes: Acquire the area where the first temperature measuring hole on the chamber is located, recorded as the first setting area; determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, recorded as the first target temperature; judge whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber; and / or, Obtain an area on the chamber where the second temperature measuring hole is located, recorded as a second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, recorded as a second target temperature; determine whether the second temperature is equal to the second target temperature, if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber.

12. The method according to claim 11, characterized in that The semiconductor heat treatment equipment further includes a motor, which is connected to the coil and is used to drive the coil to translate; controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber, includes: Calculating the translation amount and translation direction of the coil based on the first target temperature and the first temperature; controlling the motor to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber; and / or, The translation amount and translation direction of the coil are calculated based on the second target temperature and the second temperature; and the motor is controlled to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber.

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