Calculation method, device and equipment of basin ultra-deep layer temperature field and storage medium

Abstract

The embodiment of the invention provides a calculation method and device for a basin ultra-deep layer temperature field, equipment and a storage medium. The method comprises the steps that the surface temperature, the surface heat flow and the target depth of a target area are determined; determining the structural layer blending thermal conductivity and the rock heat generation rate corresponding to the target depth; and calculating the formation temperature corresponding to the target depth according to the surface temperature, the surface heat flow, the target depth, the structural layer blending heat conductivity and the rock heat generation rate. In the embodiment of the invention, the formation temperature of the ultra-deep layer is calculated by combining the surface temperature, the surface heat flow, the target depth, the structural layer blending heat conductivity and the rock heat generation rate, and the temperature measurement efficiency is improved. In addition, the method can accurately calculate the temperature of the basin ultra-deep layer temperature field, so that the intervention of human factors is eliminated, and the accuracy is improved.

Description

Technical Field

[0001] The present application relates to the technical field of oil and gas exploration, and in particular to a calculation method, device, equipment and storage medium for ultra-deep temperature field in a basin. Background Art

[0002] In the prior art, the ultra-deep temperature field in sedimentary basins is mainly calculated by using various borehole test temperature data (for example, system steady-state temperature measurement, oil test temperature, quasi-steady-state temperature measurement, transient temperature measurement, etc.), and the geothermal gradient is obtained based on the test temperature data, and then the temperature field is calculated.

[0003] However, due to technical and economic constraints, there are currently few ultra-deep wells in the basin, and there are no ultra-deep wells in most areas, making it difficult to obtain measured geothermal data. In addition, the current geothermal gradient of a sedimentary basin is related to depth. Generally, the geothermal gradient in the shallow part is greater than that in the deep part. The formation temperature obtained by simply multiplying the formation depth by the geothermal gradient has a large error and cannot accurately obtain the ultra-deep temperature of a sedimentary basin. Summary of the invention

[0004] In view of this, the present application provides a calculation method, device, equipment and storage medium for the ultra-deep temperature field of a basin, so as to solve the problems of difficulty in obtaining deep measured geothermal temperature and low calculation accuracy in the prior art.

[0005] In a first aspect, an embodiment of the present application provides a method for calculating an ultra-deep temperature field in a basin, comprising:

[0006] Determine the surface temperature, surface heat flow and target depth in the target area;

[0007] Determining the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth;

[0008] The formation temperature corresponding to the target depth is calculated according to the surface temperature, the surface heat flow, the target depth, the harmonic thermal conductivity of the structural layer and the rock heat generation rate.

[0009] In a possible implementation, the calculation formula of the formation temperature is:

[0010]

[0011] Among them, T is the formation temperature, T0 is the surface temperature, q0 is the surface heat flow, Z is the target depth, k is the harmonic thermal conductivity of the structural layer, and A is the heat generation rate of the rock.

[0012] In a possible implementation, the determining of the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth includes:

[0013] Based on the drilling data of the wells that have been drilled and the core samples, the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth are determined.

[0014] In a possible implementation, the method further includes:

[0015] Based on the calculated multiple formation temperatures of the target area, a current temperature distribution map of the target area at the target depth is drawn.

[0016] In a second aspect, an embodiment of the present application provides a device for calculating an ultra-deep temperature field in a basin, comprising:

[0017] A first parameter determination module is used to determine the surface temperature, surface heat flow and target depth of the target area;

[0018] A second parameter determination module is used to determine the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth;

[0019] The formation temperature calculation module is used to calculate the formation temperature corresponding to the target depth according to the surface temperature, the surface heat flow, the target depth, the structural layer harmonic thermal conductivity and the rock heat generation rate.

[0020] In a possible implementation, the calculation formula of the formation temperature is:

[0021]

[0022] Among them, T is the formation temperature, T0 is the surface temperature, q0 is the surface heat flow, Z is the target depth, k is the harmonic thermal conductivity of the structural layer, and A is the heat generation rate of the rock.

[0023] In a possible implementation manner, the second parameter determination module is specifically configured to:

[0024] Based on the drilling data of the wells that have been drilled and the core samples, the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth are determined.

[0025] In a possible implementation manner, the device further includes:

[0026] The current temperature distribution map drawing module is used to draw the current temperature distribution map of the target area at the target depth based on the calculated multiple formation temperatures of the target area.

[0027] In a third aspect, an embodiment of the present application provides an electronic device, including:

[0028] processor;

[0029] Memory;

[0030] And a computer program, wherein the computer program is stored in the memory, and the computer program includes instructions, and when the instructions are executed by the processor, the electronic device executes any one of the methods described in the first aspect.

[0031] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium includes a stored program, wherein when the program is running, the device where the computer-readable storage medium is located is controlled to execute any one of the methods described in the first aspect.

[0032] In the embodiment of the present application, the formation temperature of the ultra-deep layer is calculated by combining the surface temperature, surface heat flow, target depth, structural layer harmonic thermal conductivity and rock heat generation rate to improve the temperature measurement efficiency. In addition, the method can accurately calculate the temperature of the ultra-deep temperature field of the basin, eliminating the intervention of human factors and improving accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0034] Figure 1 A schematic diagram of a flow chart of a method for calculating the ultra-deep temperature field of a basin provided in an embodiment of the present application;

[0035] Figure 2 The current temperature distribution map of the Sichuan Basin at a depth of 4500m provided in the embodiment of the present application;

[0036] Figure 3 The current temperature distribution map of the Sichuan Basin at a depth of 6500m provided in the embodiment of the present application;

[0037] Figure 4 The current temperature distribution map of the Sichuan Basin at a depth of 8000m provided in the embodiment of the present application;

[0038] Figure 5 This is a structural block diagram of a device for calculating the ultra-deep temperature field of a basin provided in this application;

[0039] Figure 6 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to better understand the technical solution of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0041] It should be clear that the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0042] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0043] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0044] The current temperature of a sedimentary basin is related to its depth, and the temperature gradient in the shallow part is generally greater than that in the deep part. Therefore, the difference in the temperature measurement depth of different boreholes will lead to the fact that the geothermal gradient calculated directly using the drilling temperature measurement data is not comparable in space. There will be large errors when calculating the ultra-deep geothermal based on the geothermal gradient, and it is impossible to accurately analyze the planar distribution law of the ultra-deep geothermal.

[0045] To address this problem, the present application provides a method for calculating the ultra-deep temperature field of a basin, which combines the surface temperature, surface heat flow, target depth, structural layer harmonic thermal conductivity and rock heat generation rate to calculate the formation temperature of the ultra-deep layer, thereby improving the temperature measurement efficiency. In addition, the method can accurately calculate the temperature of the ultra-deep temperature field of the basin, eliminates the intervention of human factors, and improves accuracy. This is described in detail below in conjunction with specific embodiments.

[0046] See also Figure 1 , is a flow chart of a method for calculating the ultra-deep temperature field of a basin provided in an embodiment of the present application. Figure 1 As shown, the method mainly includes the following steps.

[0047] Step S101: Determine the surface temperature, surface heat flow and target depth of the target area.

[0048] In the embodiment of the present application, the surface temperature and the surface heat flow are related to the area to be measured, so the surface temperature and the surface heat flow can be determined based on the target area. For example, the surface temperature in a certain area is 10°C.

[0049] In the embodiment of the present application, the target depth is the bottom layer depth to be measured. For example, the target depth may be 4500m, 6500m, 8000m, etc., and the embodiment of the present application does not impose any specific limitation on this.

[0050] Step S102: Determine the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth.

[0051] In a specific implementation, the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth can be determined based on the drilling data and core samples of the drilled wells. It should be pointed out that the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock are related to the depth. In one possible way, the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock can take the average of multiple test data at different depths. Exemplarily, when the target depth is 4500m, the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock can take the average of multiple test data at different depths from 0 to 4500m.

[0052] Step S103: Calculate the formation temperature corresponding to the target depth according to the surface temperature, the surface heat flow, the target depth, the harmonic thermal conductivity of the structural layer and the rock heat generation rate.

[0053] In a possible implementation, the formation temperature corresponding to the target depth can be calculated based on a one-dimensional thermal steady-state conduction equation. Specifically, the one-dimensional thermal steady-state conduction equation is as follows:

[0054]

[0055] Among them, T is the formation temperature, T0 is the surface temperature, q0 is the surface heat flow, Z is the target depth, k is the harmonic thermal conductivity of the structural layer, and A is the heat generation rate of the rock.

[0056] In the embodiment of the present application, the formation temperature of the ultra-deep layer is calculated by combining the surface temperature, surface heat flow, target depth, structural layer harmonic thermal conductivity and rock heat generation rate to improve the temperature measurement efficiency. In addition, the method can accurately calculate the temperature of the ultra-deep temperature field of the basin, eliminating the intervention of human factors and improving accuracy.

[0057] In one possible implementation, using Figure 1 After obtaining the formation temperatures at multiple points in the target area at the target depth, the method shown can draw a current temperature distribution map of the target area at the target depth based on the calculated multiple formation temperatures of the target area.

[0058] For example, Figure 2-Figure 4 These are the current temperature distribution diagrams of the Sichuan Basin at depths of 4500m, 6500m, and 8000m. Figure 2-Figure 4As shown, the current temperature at a burial depth of 4500m is 80-120℃, the current temperature at a burial depth of 6500m is 100-180℃, and the current temperature at a burial depth of 8000m is 140-200℃.

[0059] In addition, the formation temperatures of typical wells at depths of 4500m, 5000m, 7100m, 7500m, and 7700m in the Sichuan Basin with a depth of 7000m were selected for actual measurement, and the measured temperatures were compared with the calculated temperatures, as shown in Table 1.

[0060] Table 1:

[0061] depth 4500m 5000m 7100m 7500m 7700m Measured temperature 133.46 123.11 149.09 150.03 159.78 Calculating Temperature 132.69 120.66 136.09 151.64 166.89

[0062] As shown in Table 1, the calculated geothermal results for the ultra-deep layer in the Sichuan Basin have a good correspondence with the measured geothermal values, proving that the ultra-deep geothermal calculated by the one-dimensional steady-state heat conduction equation is credible.

[0063] Corresponding to the above-mentioned embodiments, the present application also provides a device for calculating the ultra-deep temperature field of a basin.

[0064] See also Figure 5 , which is a structural block diagram of a calculation device for ultra-deep temperature field in a basin provided by the present application. Figure 5 As shown, it mainly includes the following modules.

[0065] The first parameter determination module 501 is used to determine the surface temperature, surface heat flow and target depth of the target area;

[0066] The second parameter determination module 502 is used to determine the structural layer harmonic thermal conductivity and rock heat generation rate corresponding to the target depth;

[0067] The formation temperature calculation module 503 is used to calculate the formation temperature corresponding to the target depth according to the surface temperature, the surface heat flow, the target depth, the harmonic thermal conductivity of the structural layer and the rock heat generation rate.

[0068] In a possible implementation, the calculation formula of the formation temperature is:

[0069]

[0070] Among them, T is the formation temperature, T0 is the surface temperature, q0 is the surface heat flow, Z is the target depth, k is the harmonic thermal conductivity of the structural layer, and A is the heat generation rate of the rock.

[0071] In a possible implementation manner, the second parameter determination module is specifically configured to:

[0072] Based on the drilling data of the wells that have been drilled and the core samples, the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth are determined.

[0073] In a possible implementation manner, the device further includes:

[0074] The current temperature distribution map drawing module is used to draw the current temperature distribution map of the target area at the target depth based on the calculated multiple formation temperatures of the target area.

[0075] In the embodiment of the present application, the formation temperature of the ultra-deep layer is calculated by combining the surface temperature, surface heat flow, target depth, structural layer harmonic thermal conductivity and rock heat generation rate to improve the temperature measurement efficiency. In addition, the method can accurately calculate the temperature of the ultra-deep temperature field of the basin, eliminating the intervention of human factors and improving accuracy.

[0076] It should be pointed out that the specific contents involved in the embodiments of the present application can be found in the description of the above method embodiments, and for the sake of brevity, they will not be repeated here.

[0077] Corresponding to the above embodiment, an embodiment of the present application further provides an electronic device.

[0078] See also Figure 6 , is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application. Figure 6 As shown, the electronic device 600 may include: a processor 601, a memory 602 and a communication unit 603. These components communicate via one or more buses. Those skilled in the art will appreciate that the electronic device structure shown in the figure does not limit the embodiments of the present application, and it may be a bus structure or a star structure, and may include more or fewer components than shown in the figure, or combine certain components, or arrange components differently.

[0079] The communication unit 603 is used to establish a communication channel so that the electronic device can communicate with other devices.

[0080] The processor 601 is the control center of the electronic device. It uses various interfaces and lines to connect various parts of the entire electronic device. It runs or executes software programs and / or modules stored in the memory 602, and calls data stored in the memory to perform various functions of the electronic device and / or process data. The processor can be composed of an integrated circuit (IC), for example, it can be composed of a single packaged IC, or it can be composed of multiple packaged ICs with the same or different functions. For example, the processor 601 can include only a central processing unit (CPU). In the embodiment of the present application, the CPU can be a single computing core or multiple computing cores.

[0081] Memory 602 is used to store execution instructions of processor 601. Memory 602 can be implemented by any type of volatile or non-volatile storage device or a combination of them, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk.

[0082] When the execution instructions in the memory 602 are executed by the processor 601 , the electronic device 600 is enabled to execute part or all of the steps in the above method embodiment.

[0083] Corresponding to the above embodiment, the embodiment of the present application further provides a computer-readable storage medium, wherein the computer-readable storage medium may store a program, wherein when the program is running, the device where the computer-readable storage medium is located may be controlled to perform some or all of the steps in the above method embodiment. In a specific implementation, the computer-readable storage medium may be a disk, an optical disk, a read-only memory (ROM) or a random access memory (RAM).

[0084] Corresponding to the above-mentioned embodiment, the embodiment of the present application further provides a computer program product, which includes executable instructions. When the executable instructions are executed on a computer, the computer executes some or all of the steps in the above-mentioned method embodiment.

[0085] In the embodiments of the present application, "at least one" refers to one or more, and "plurality" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent the existence of A alone, the existence of A and B at the same time, and the existence of B alone. Among them, A and B can be singular or plural. The character " / " generally indicates that the previous and subsequent associated objects are in an "or" relationship. "At least one of the following" and similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b and c can be represented by: a, b, c, ab, ac, bc, or abc, where a, b, c can be single or multiple.

[0086] Those of ordinary skill in the art will appreciate that the various units and algorithm steps described in the embodiments disclosed herein can be implemented in a combination of electronic hardware, computer software, and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0087] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0088] In several embodiments provided in the present application, any function can be stored in a computer-readable storage medium if it is implemented in the form of a software functional unit and sold or used as an independent product. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), disk or optical disk, etc., and other media that can store program codes.

[0089] The above is only a specific implementation of the present application. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. The protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A method for calculating the ultra-deep temperature field of a basin, characterized in that: include: Determine the surface temperature, surface heat flow and target depth in the target area; Determining the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth; The formation temperature corresponding to the target depth is calculated according to the surface temperature, the surface heat flow, the target depth, the harmonic thermal conductivity of the structural layer and the rock heat generation rate.

2. The method according to claim 1, characterized in that The calculation formula of the formation temperature is: Among them, T is the formation temperature, T0 is the surface temperature, q0 is the surface heat flow, Z is the target depth, k is the harmonic thermal conductivity of the structural layer, and A is the heat generation rate of the rock.

3. The method according to claim 1, characterized in that The determining of the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth comprises: Based on the drilling data of the wells that have been drilled and the core samples, the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth are determined.

4. The method according to claim 1, characterized in that The method further comprises: Based on the calculated multiple formation temperatures of the target area, a current temperature distribution map of the target area at the target depth is drawn.

5. A computing device for ultra-deep temperature field in a basin, characterized in that: include: A first parameter determination module is used to determine the surface temperature, surface heat flow and target depth of the target area; A second parameter determination module is used to determine the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth; The formation temperature calculation module is used to calculate the formation temperature corresponding to the target depth according to the surface temperature, the surface heat flow, the target depth, the structural layer harmonic thermal conductivity and the rock heat generation rate.

6. The device according to claim 5, characterized in that The calculation formula of the formation temperature is: Among them, T is the formation temperature, T0 is the surface temperature, q0 is the surface heat flow, Z is the target depth, k is the harmonic thermal conductivity of the structural layer, and A is the heat generation rate of the rock.

7. The device according to claim 5, characterized in that The second parameter determination module is specifically used to: Based on the drilling data of the wells that have been drilled and the core samples, the harmonic thermal conductivity of the structural layer and the heat generation rate of the rock corresponding to the target depth are determined.

8. The device according to claim 5, characterized in that The device also includes: The current temperature distribution map drawing module is used to draw the current temperature distribution map of the target area at the target depth based on the calculated multiple formation temperatures of the target area.

9. An electronic device, characterized in that: include: processor; Memory; And a computer program, wherein the computer program is stored in the memory, and the computer program includes instructions, and when the instructions are executed by the processor, the electronic device executes the method according to any one of claims 1 to 4.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium includes a stored program, wherein when the program is executed, the device where the computer-readable storage medium is located is controlled to execute the method according to any one of claims 1 to 4.

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