High-brightness full-spectrum Xe plasma white light source

Abstract

The invention relates to the field of spectrum detection and optical instruments, in particular to a high-brightness full-spectrum Xe plasma white light source which is composed of a switching power supply, a microwave power supply, a transduction cavity, an Xe plasma optical cavity, a white light condensation cavity and an optical system. The product is novel in design, portable in equipment, convenient to maintain, high in photoelectric conversion efficiency, rich in spectrum, capable of replacing solar spectrum, high in brightness, high in optical power, capable of being matched with optical instruments, capable of meeting various application occasions, convenient to install, capable of being started through one key, stable in performance and capable of working uninterruptedly for a long time, and modular assembly is achieved.

Description

Technical Field

[0001] The invention relates to the field of spectrum detection and optical instruments, and in particular to a high-brightness full-spectrum Xe plasma white light source. Background Art

[0002] Light sources are widely used in human activities and all walks of life. Among them, light sources have a huge market in high-end manufacturing and scientific instrument products. Especially in the inspection and detection of modern high-end chip manufacturing and the manufacturing process of high-precision chips, white light sources play an indispensable role. In addition, white light sources have broad application prospects in the inspection, detection and detection of optoelectronics technology, early diagnosis of tumor cells, characteristic agricultural production, and fish and animal husbandry breeding and cultivation. They are also key components of optical instruments. In summary, white light sources are widely used in high-precision industry, biomedicine, regional identification of plants, and detection of drug residues in crops.

[0003] At present, the white light sources on the market mainly include LED lamps, incandescent lamps, electrodeless lamps, halogen lamps and high-pressure Xe lamps. The main problem of these light sources is the lack of spectrum. The lack of spectrum will lead to misjudgment in the imaging analysis of living biological cells, chromatographic observation and medical biopsy. In terms of photosynthesis, crop growth, animal husbandry and aquatic product breeding, spectral defects will also seriously affect the growth and development of seedlings; in the application of special spectral instruments, high-pressure Xe lamps have a narrow spectral bandwidth and an extremely short working life, with only a few hundred hours of working time. The spectrum of halogen lamps and LED lamps is only limited to 307-700nm. Therefore, the above white light sources are not suitable for application in scientific research, industrial production and biomedicine.

[0004] The existing white light source products are discharge-type laser-driven plasma white light sources, which are produced by electrode discharge and high-power laser drive. However, high-energy discharge in the lamp cavity will produce sputtering, the working gas is easily contaminated, and the life of the light source is easily affected. The service life of the lamp is only a few thousand hours. At the same time, this light source equipment uses kilowatt-level laser equipment and cooling system, with a complex structure. The working stability of the light source is completely dependent on the performance of the driving laser. In the field of chip production, this greatly affects the continuity of online inspection and testing, and also affects the quality of the product. Summary of the invention

[0005] The present invention provides a high-power, high-brightness, full-spectrum white light source with portable equipment, simple structure, stable operation and long life, which is used for semiconductor device and chip production and wafer inspection and detection. The rich colors of the white light source can also be used to ensure that high-resolution living cell diagnostic imaging is not distorted. The high-brightness full-spectrum light source of the present invention is small in size, easy to use, stable in performance, and can be turned on with one button.

[0006] The specific technical scheme of the present invention is: a high-brightness full-spectrum Xe plasma white light source, wherein the Xe plasma white light source is Xe plasma white light generated by Xe gas excited by microwave discharge, and is composed of a switching power supply, a microwave power supply, a transducer cavity, a Xe plasma optical cavity, a white light focusing cavity and an optical system; Among them, the switching power supply provides the working power supply, the Xe plasma optical cavity is used to store high-purity Xe gas molecules and is used as a Xe plasma full-spectrum light-emitting chamber; the optical system is used to transmit the extracted white light to the outside; after the high-purity Xe gas is injected into the Xe plasma optical cavity, the high-energy and high-frequency microwaves provided by the microwave power supply are injected into the Xe plasma optical cavity through the transducer cavity to generate high-temperature and high-energy plasma, and the high-energy plasma collides with the Xe molecules, and the Xe molecules are stimulated to emit, obtaining full-spectrum white light. The full-spectrum white light generated by the Xe plasma optical cavity is extracted and output through the white light focusing cavity.

[0007] Preferably, the switching power supply provides working power, and the high energy and high frequency provided by the microwave power supply is 400W / 37.8Mhz.

[0008] In particular, the purity of the high-purity Xe gas injected into the Xe plasma optical cavity is 99.999%.

[0009] Preferably, the white light focusing cavity is made of aluminum alloy material, the white light focusing cavity is conical, and the input light is reflected only once in the cavity.

[0010] Preferably, the transducer cavity is a square structure with a circular structure inside, with an outer square size of 74x74mm, an inner diameter of 50mm, and a length of 81mm. It is made of aluminum alloy and has a shielding function.

[0011] Preferably, the Xe plasma optical cavity is connected to the white light focusing cavity, which is used to extract the white light power generated by the Xe plasma optical cavity, output a uniform circular structure light spot or enter the optical fiber through a fiber coupler to provide broadband spectrum detection for optical instruments.

[0012] Preferably, the Xe plasma optical cavity is sintered from high-purity low HO-based quartz optical glass, and the Xe plasma optical cavity can transmit a wavelength spectrum of 162nm to 2100nm.

[0013] Preferably, the switching power supply is a DC switching power supply and is a modular device. The mains electricity is rectified into a 28V DC power supply with an electrical power of 500W by the switching power supply.

[0014] In particular, the physical structure of the high-brightness full-spectrum Xe plasma white light source includes: a shell, a fan is fixedly installed on the inside of the shell, a transducer cavity module is fixedly installed on the inside of the shell, a plasma cavity module and a focusing cavity module are installed on the outside of the transducer cavity module, and an optical system module is installed on the outside of the plasma cavity module and the focusing cavity module.

[0015] Furthermore, a DC power supply module is installed on the top of the transducer cavity module, and a microwave power supply module is fixedly installed inside the shell.

[0016] The present invention has the following beneficial effects:

[0017] (1) The present invention has advanced ideas, strong innovation, novel design, portable equipment, simple structure and easy use.

[0018] (2) The present invention has high electro-optical conversion efficiency, low thermal effect, stable operation, and can be cooled by a small axial flow fan. It can be turned on with one button and can maintain long-term non-stop operation.

[0019] (3) The white light spectrum of the present invention is rich (200nm~1100nm), which can be used for optical inspection and detection, and can also be used as a light source for optical instruments. It has a wide range of applications and will inject great potential into the development of new optical instruments.

[0020] (4) The product of the present invention is a white light source, which solves a technical bottleneck in the process of semiconductor production inspection and testing, and will produce broad social benefits and potential, huge economic benefits. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of the module structure of the present invention; Figure 2 This is an overall assembly diagram of a high-brightness full-spectrum Xe plasma white light source of the present invention; Figure 3 A full spectrum diagram of a high-brightness full-spectrum Xe plasma white light source provided by the present invention; Figure 4 A schematic diagram of the interior of a transducer cavity of a high-brightness full-spectrum Xe plasma white light source provided by the present invention; Figure 5 A high-brightness broadband spectrum diagram of a high-brightness full-spectrum Xe plasma white light source provided by the present invention.

[0022] In the figure: 1. Shell; 2. Transducer cavity module; 3. Plasma cavity module and focusing cavity module; 4. DC power supply module; 5. Microwave power supply module; 6. Optical system module; 7. Fan. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical scheme and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other. To achieve the above-mentioned purpose, the present invention adopts the following technical scheme.

[0024] See also Figure 1-Figure 5 As shown, the present invention provides a high brightness full spectrum Xe plasma white light source, such as Figure 1 As shown, the Xe plasma white light source is Xe plasma white light generated by Xe gas excited by microwave discharge. In principle, the Xe plasma white light source consists of a switching power supply, a microwave power supply, a transducer cavity, a Xe plasma optical cavity, a white light focusing cavity and an optical system.

[0025] like Figure 2 The figure shows the overall assembly diagram of a high brightness full spectrum Xe plasma white light source of the present invention. 220V mains power is input from the rear panel, and the panel switch enters the DC switching power supply to rectify into 28V direct current, with an electric power of 500W. The Xe plasma white light source of the present invention has only this switching power supply, which is a modular device, providing convenience for maintenance, and has a volume of 200×100×46mm 3 , which can provide power support for the entire Xe plasma white light source.

[0026] The microwave power supply is powered by a 28VDC switching power supply and has a volume of 200×84×40mm 3 The power is 300W. The microwave power supply is installed on the radiator to generate high-frequency microwaves, which are input to the transducer cavity through the shielded wire. The transducer cavity is made of aluminum alloy and has a volume of 110×74×60mm. 3 , with a square geometric structure and shielding function. The microwave power supply is broadband microwave with a central wavelength of 37.8Mhz, which is used to provide high frequency.

[0027] like Figure 2As shown, the Xe plasma optical cavity is connected to the transducer cavity in order to receive high-frequency microwaves from the microwave power supply. It is sintered from high-purity low-HO-based quartz optical glass (the HO groups in the high-purity low-HO-based are hydroxyl groups, and the HO groups are less than or equal to 5%), and can transmit a wavelength spectrum of 162nm to 2100nm. The optical cavity volume is 10mm×20mm. In application, after the Xe plasma optical cavity is cleaned, it is evacuated to a high vacuum with a high vacuum system and then filled with optically pure Xe gas with a purity of 99.999%. Subsequently, high-frequency microwave electrons of different energies generated by the microwave power supply are injected into the Xe plasma optical cavity through the transducer cavity for emission, generating high-temperature and high-energy plasma. After colliding with Xe gas molecules, stimulated emission is obtained to obtain a white light source. The spectral bandwidth of the white light source is 200nm to 1100nm, as shown in FIG. Figure 3 shown.

[0028] like Figure 2 As shown, the physical structure of the high-brightness full-spectrum Xe plasma white light source includes: a shell 1, a fan 7 is fixedly installed on the inner side of the shell 1, a transducer cavity module 2 is fixedly installed on the inner side of the shell 1, a plasma cavity module and a focusing cavity module 3 are installed on the outer side of the transducer cavity module 2, an optical system module 6 is installed on the outer side of the plasma cavity module and the focusing cavity module 3, a DC power supply module 4 is installed on the top of the transducer cavity module 2, and a microwave power supply module 5 is fixedly installed on the inner side of the shell 1.

[0029] The function of the white light focusing cavity is to extract white light power and output it. It is made of aluminum alloy, with a large entrance and a small exit, and a conical geometric space structure. The design requires that the input light is reflected only once in the cavity, and its volume needs to be specially designed optically according to the size of the luminous volume. After the design is completed, it can realize full spectrum extraction and high-power and high-brightness output. Figure 2 As shown, the optical system is fully integrated with the white light focusing cavity to achieve high-power, high-brightness, large-area circular spot output (such as Figure 5 As shown, the ordinate is a relative value, and the measurement is made using the new generation of fiber optic spectrometer Ocean-FX Ocean Optics. Due to different pressures, the spectral width measured by the measuring equipment is different. Figure 5 It can only show the schematic diagram between wavelength and intensity between 230 and 850 nm. It can be used for inspection and detection of semiconductor devices and wafers. It can also be coupled into optical fibers for matching light sources of various optical instruments, photoelectric detection instruments, and detection instruments.

[0030] The white light source of the present invention has high output optical power and photoelectric conversion efficiency (the photoelectric conversion efficiency is above 5%, which is one thousandth higher than the photoelectric conversion efficiency in the prior art. The input electrical power in this application is 280w and the output optical power is 14-28w). It is a high-brightness light source with a light source of 360 0Solid angle emission, point source volume is 1.6mm 2 , with a diameter of 1mm and a length of 1.6mm, and a spectrum that is relatively consistent with sunlight. The low thermal effect of the present invention means that compared with traditional light sources, it does not require water cooling or large heat dissipation equipment for heat dissipation, but only requires a small axial flow fan for cooling, which can keep the temperature outside the shell 1 low.

[0031] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A high brightness full spectrum Xe plasma white light source, characterized in that: The Xe plasma white light source is a Xe plasma white light generated by Xe gas excited by microwave discharge, and is composed of a switching power supply, a microwave power supply, a transducer cavity, a Xe plasma optical cavity, a white light focusing cavity and an optical system; Among them, the Xe plasma optical cavity is used to store high-purity Xe gas molecules and is used as a Xe plasma full-spectrum light-emitting chamber; the optical system is used to transmit the extracted white light to the outside; after high-purity Xe gas is injected into the Xe plasma optical cavity, the high-energy and high-frequency microwaves provided by the microwave power supply are injected into the Xe plasma optical cavity through the transducer cavity, generating high-temperature and high-energy plasma, and colliding with the Xe molecules. The Xe molecules are stimulated to emit, and full-spectrum white light is obtained, which is extracted by the white light focusing cavity and then output.

2. The high brightness full spectrum Xe plasma white light source according to claim 1, characterized in that: The switching power supply provides working electricity, and the microwave power supply provides high energy and high frequency of 400W / 37.8Mhz.

3. The high brightness full spectrum Xe plasma white light source according to claim 1, characterized in that: The purity of the high-purity Xe gas injected into the Xe plasma optical cavity is 99.999%.

4. The high brightness full spectrum Xe plasma white light source according to claim 1, characterized in that: The white light focusing cavity is made of aluminum alloy material. The white light focusing cavity is conical, and the input light is reflected only once in the cavity.

5. The high brightness full spectrum Xe plasma white light source according to claim 1, characterized in that: The transducer cavity is a square structure made of aluminum alloy and has a shielding function.

6. The high brightness full spectrum Xe plasma white light source according to claim 1, characterized in that: The Xe plasma optical cavity is connected to the white light focusing cavity, which is used to extract the white light generated by the Xe plasma optical cavity and output a uniform circular structure light spot or enter the optical fiber through a fiber coupler to provide broadband spectrum inspection and detection for optical instruments.

7. The high brightness full spectrum Xe plasma white light source according to claim 1, characterized in that: The Xe plasma optical cavity is sintered from high-purity low HO-based quartz optical glass. The Xe plasma optical cavity can transmit a wavelength spectrum of 162nm to 2100nm.

8. The high brightness full spectrum Xe plasma white light source according to claim 1, characterized in that: The switching power supply is a DC switching power supply and a modular device. The mains power is rectified into 28V DC power by the switching power supply, and the power is 500W.

9. The high brightness full spectrum Xe plasma white light source according to claim 1, characterized in that: The physical structure of the high-brightness full-spectrum Xe plasma white light source comprises: a shell (1), a fan (7) is fixedly mounted on the inner side of the shell (1), a transducer cavity module (2) is fixedly mounted on the inner side of the shell (1), a plasma cavity module and a focusing cavity module (3) are mounted on the outer side of the transducer cavity module (2), and an optical system module (6) is mounted on the outer side of the plasma cavity module and the focusing cavity module (3).

10. The high brightness full spectrum Xe plasma white light source according to claim 9, characterized in that: A DC power module (4) is installed on the top of the transducer cavity module (2), and a microwave power module (5) is fixedly installed on the inside of the housing (1).

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