Method for determining high-temperature reverse bias test temperature of power device

Abstract

The embodiment of the invention discloses a power device high-temperature reverse bias test temperature determination method, which comprises the following steps of: fixing a power device sample in a heating device, and short-circuiting a grid electrode and a source electrode of the power device sample; performing pulse testing on the power device sample to obtain a temperature and leakage current relation curve; and placing the power device sample on a radiator, and carrying out staged temperature rise and stabilization to record leakage current so as to determine the test temperature. By implementing the method provided by the embodiment of the invention, the junction temperature of the chip can be accurately measured, and the reliability and accuracy of the high-temperature reverse bias test are ensured.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor power devices, and in particular to a method for determining the temperature of a high-temperature reverse bias test of a power device. Background Art

[0002] With the rapid development of electronic equipment, the importance of semiconductor power devices in modern industry has become increasingly prominent. The rapid expansion of power electronics applications has driven the continuous increase in module power density, but the multi-chip thermal coupling effect causes the chip temperature to rise in actual working conditions. As an important assessment item in the R&D stage, the high-temperature reverse bias test can effectively reveal the potential weaknesses and degradation effects of the field depletion structure at the device edge and passivation layer by applying temperature and voltage accelerated stress. After about 6 weeks of accelerated stress testing, it can be equivalent to a device service life of at least 15 years under actual working conditions.

[0003] With the continuous advancement of silicon-based device manufacturing technology and the increasingly demanding performance of devices in the application field, the traditional junction temperature limit of 150°C can no longer meet the demand, and the industry has proposed a junction temperature limit of 175°C for devices. However, under high temperature reverse bias voltage, the device will inevitably generate a certain leakage current, resulting in additional temperature rise, which makes it impossible to accurately measure the chip junction temperature through direct physical methods during the HTRB test, thus posing new challenges to the authenticity and effectiveness of the test.

[0004] Therefore, it is necessary to design a new method to accurately measure the chip junction temperature and ensure the reliability and accuracy of high-temperature reverse bias testing. Summary of the invention

[0005] The purpose of the present invention is to overcome the defects of the prior art and provide a method for determining the temperature of a high-temperature reverse bias test of a power device.

[0006] In order to solve the above technical problems, the object of the present invention is to achieve the following technical solutions: to provide a method for determining the temperature of a high-temperature reverse bias test of a power device, comprising:

[0007] Fixing the power device sample in the heating device, and short-circuiting the gate and source of the power device sample;

[0008] Performing a pulse test on the power device sample to obtain a temperature-leakage current relationship curve;

[0009] The power device sample is placed on a heat sink, and the temperature is raised and stabilized in stages to record the leakage current and further determine the test temperature.

[0010] A further technical solution is: fixing the power device sample in the heating device and short-circuiting the gate and source of the power device sample, including:

[0011] The power device sample is installed in the heating device, and the gate and source of the power device sample are short-circuited, and the collector and emitter are correctly connected through the leads.

[0012] A further technical solution is that the number of the power device samples is at least 2.

[0013] A further technical solution is: performing a pulse test on the power device sample to obtain a temperature-leakage current relationship curve, including:

[0014] Heating the power device sample to a predetermined temperature and keeping it stable;

[0015] After the temperature is stabilized, inputting a short-time pulse voltage to the power device sample;

[0016] While applying the short-time pulse voltage, synchronously recording the leakage current data and the corresponding temperature of the power device sample;

[0017] A temperature-leakage current relationship curve is drawn based on the leakage current data and the corresponding temperature.

[0018] A further technical solution is that the duration of the short-time pulse voltage does not exceed 1 millisecond.

[0019] A further technical solution is: placing the power device sample on a heat sink, heating it up in stages and stabilizing it, so as to record the leakage current and then determine the test temperature, including:

[0020] Evenly apply thermal conductive silicone grease on the copper base plate of the power device sample;

[0021] Mounting the power device sample on a heat sink;

[0022] The power device sample is heated up in stages and gradually adjusted to a target temperature;

[0023] After reaching the target temperature, maintaining the target temperature stable;

[0024] When the target temperature is stable, record the current leakage current data;

[0025] The junction temperature of the chip of the power device sample is determined according to the recorded leakage current combined with the temperature-leakage current relationship curve to obtain the test temperature.

[0026] A further technical solution is: after reaching the target temperature, maintaining the target temperature stable comprises:

[0027] After reaching the target temperature, the target temperature was kept stable for 2 hours.

[0028] Compared with the prior art, the present invention has the following beneficial effects: the present invention fixes the power device sample in a heating device and short-circuits the gate and the source to ensure that the circuit is closed for easy testing; performs pulse testing on the sample to obtain a temperature-leakage current relationship curve to provide data support for subsequent analysis; places the power device sample on a radiator to ensure good thermal contact to optimize the heat dissipation effect; gradually increases the temperature by a staged heating method to avoid thermal shock affecting the test results; maintains a stable state at the target temperature, records the leakage current data, and ensures the consistency of the test environment; and accurately determines the junction temperature of the chip in combination with the recorded leakage current and temperature data to verify the reliability and accuracy of the high-temperature reverse bias test.

[0029] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0031] Figure 1 A schematic flow chart of a method for determining the temperature of a high-temperature reverse bias test of a power device provided by an embodiment of the present invention;

[0032] Figure 2 A schematic diagram of a sub-flow chart of a method for determining the temperature of a power device high temperature reverse bias test provided by an embodiment of the present invention

[0033] Figure 3 A schematic diagram of a sub-flow chart of a method for determining the temperature of a high-temperature reverse bias test of a power device provided by an embodiment of the present invention;

[0034] Figure 4 A schematic diagram of a temperature-leakage current relationship curve provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0036] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0037] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0038] It should be further understood that the term "and / or" used in the present description and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0039] With the development of electronic devices, the importance of semiconductor power devices in industry continues to increase. The expansion of the power electronics field has increased module power density, but the multi-chip thermal coupling effect causes temperature rise. The high-temperature reverse bias test reveals the potential weaknesses and degradation effects of the device by applying temperature and voltage accelerated stress. After about 6 weeks of testing, it is equivalent to a service life of more than 15 years. The industry's requirements for the junction temperature limit have been raised to 175°C, but the generation of leakage current makes it challenging to measure the chip junction temperature in the high-temperature reverse bias test.

[0040] To this end, an embodiment of the present invention provides a method for determining the temperature of a power device high temperature reverse bias test, which can accurately measure the junction temperature of the chip and ensure the reliability and accuracy of the high temperature reverse bias test.

[0041] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0042] See also Figure 1 The above-mentioned method for determining the temperature of a high-temperature reverse bias test of a power device includes steps S110 to S130.

[0043] S110 , fixing the power device sample in a heating device, and short-circuiting the gate and source of the power device sample.

[0044] In this embodiment, the power device sample is installed in the heating device to ensure that the gate and source of the power device sample are short-circuited, and the collector and emitter are correctly connected through the lead wire.

[0045] The number of the power device samples is at least 2.

[0046] Specifically, the power device sample is firmly mounted in the heating device to ensure that it can work stably during the heating process. The temperature of the heating device can be precisely controlled to facilitate testing under different temperature conditions.

[0047] Shorting the gate and source: By shorting the gate and source, the power device can be turned on, eliminating the influence of the gate control signal, so as to focus on the measurement of other parameters.

[0048] Collector and Emitter Connections: Ensuring that the collector and emitter are properly connected via leads is critical for subsequent current and voltage measurements.

[0049] Number of samples: Using at least two power device samples allows for comparative testing, thus improving the reliability and validity of the data.

[0050] Improve test accuracy: The operation of shorting the gate and source ensures that the power devices are in a unified working state, avoiding interference caused by changes in control signals, thereby improving the accuracy of test results.

[0051] By placing multiple samples in the same heating device, their performance under the same temperature conditions can be better observed, making it easier to analyze the thermal coupling effects of different samples.

[0052] Using multiple samples for comparative testing can effectively reduce the test errors caused by the randomness of a single sample and enhance the reliability of the results.

[0053] Under heating conditions, the aging and degradation processes of power devices can be accelerated, helping to quickly identify potential failure modes and design flaws.

[0054] Through testing and data analysis of multiple samples, it can provide important basis for the design and material selection of power devices, and promote the optimization and improvement of product performance.

[0055] In summary, the implementation of step S110 not only improves the accuracy and reliability of the test, but also provides important support for the research and development of power devices.

[0056] S120 , performing a pulse test on the power device sample to obtain a temperature-leakage current relationship curve.

[0057] In this embodiment, the temperature and leakage current relationship curve refers to a graph showing the change in leakage current of a power device at different temperatures.

[0058] In one embodiment, see Figure 2 , the above-mentioned step S120 may include steps S121 to S124.

[0059] S121, heating the power device sample to a predetermined temperature and keeping it stable;

[0060] S122: After the temperature is stabilized, a short-time pulse voltage is input to the power device sample.

[0061] Specifically, the duration of the short-time pulse voltage does not exceed 1 millisecond.

[0062] S123, while applying the short-time pulse voltage, synchronously recording the leakage current data and the corresponding temperature of the power device sample;

[0063] S124, drawing a temperature-leakage current relationship curve according to the leakage current data and the corresponding temperature.

[0064] In this embodiment, the relationship curve between temperature and leakage current is as follows: Figure 4 shown.

[0065] In this embodiment, the power device sample is heated to a set predetermined temperature. This temperature is usually selected based on the operating conditions and characteristics of the device, such as the upper limit of the operating temperature range. During the heating process, to ensure temperature stability, it is usually necessary to continuously monitor temperature changes until the sample reaches and remains at the target temperature. This step ensures the environmental consistency of subsequent tests. After the temperature reaches stability, a short-time pulse voltage is applied to the power device sample. The duration of this pulse does not exceed 1 millisecond to ensure that the device is in a transient state during the test process and to avoid the impact of long-term heat accumulation on the results. While applying the short-time pulse voltage, the leakage current data of the power device and its corresponding temperature are recorded in real time. This process requires high-precision measuring instruments to ensure the accuracy and consistency of the data. Based on the collected leakage current data and the corresponding temperature, a relationship curve between temperature and leakage current is drawn. This curve will help analyze the trend of leakage current changes with temperature and provide a basis for subsequent fault analysis and device optimization.

[0066] Heating the power device samples to a predetermined temperature and keeping it stable ensures the consistency of the test conditions, thereby improving the accuracy and reliability of the data. Applying a short-time pulse voltage allows the test to be performed in a transient state, which helps to analyze the dynamic response characteristics of the power device under specific conditions and capture the changes in instantaneous leakage current. Synchronously recording the leakage current and temperature data can timely capture the changes at the moment of applying the pulse voltage, ensure the real-time nature of the data, and provide sufficient basis for subsequent analysis. By drawing the relationship curve between temperature and leakage current, the relationship between the two can be intuitively observed, potential leakage current anomalies and their sensitivity to temperature can be identified, providing a scientific basis for equipment design and fault prediction.

[0067] Through in-depth analysis of the relationship between leakage current and temperature, possible failure modes can be effectively identified, providing direction for subsequent improvements and optimizations, which helps to improve the reliability and stability of power devices.

[0068] In summary, the detailed implementation of step S120 helps to achieve efficient and accurate power device testing and analysis, and provides important data support for the optimized design of the device.

[0069] S130, placing the power device sample on a heat sink, heating it up in stages and stabilizing it, so as to record the leakage current and further determine the test temperature.

[0070] In one embodiment, see Figure 3 , the above-mentioned step S130 may include steps S131 to S136.

[0071] S131, evenly apply thermal conductive silicone grease on the copper base plate of the power device sample.

[0072] In this embodiment, thermal grease is evenly applied to the copper base plate of the power device sample to ensure good thermal contact. The thermal grease can fill the tiny gap between the base plate and the heat sink to enhance the heat conduction efficiency. The heat conduction capacity between the heat sink and the device is improved, and the thermal resistance is reduced, which helps the device to dissipate heat quickly and effectively, avoiding performance degradation or damage due to overheating.

[0073] S132: Install the power device sample on a heat sink.

[0074] In this embodiment, the power device sample coated with thermal conductive silicone grease is installed on the fish scale-shaped heat sink to ensure that it is fixed and in good contact with the heat sink. A heat sink with a large effective heat dissipation area and good heat dissipation capacity is selected.

[0075] By ensuring good contact between the device and the heat sink, heat transfer efficiency is further improved, helping to keep the device within the set target temperature range.

[0076] S133, gradually raising the temperature of the power device sample to a target temperature.

[0077] In this embodiment, the power device sample is heated up in stages and gradually adjusted to the target temperature. This can be achieved by controlling the output power of the heater to ensure that the heating process is slow and stable.

[0078] Avoid thermal shock caused by rapid temperature rise, thereby reducing the risk of device damage and ensuring temperature uniformity, providing a reliable test environment.

[0079] S134. After reaching the target temperature, keep the target temperature stable.

[0080] Specifically, after reaching the target temperature, the target temperature is kept stable for 2 hours.

[0081] Specifically, this process requires the use of a constant temperature device to maintain the required temperature conditions. Ensuring a constant temperature during the test makes the measured leakage current data more accurate and reliable, while giving the device enough time to reach a thermal equilibrium state, which is convenient for subsequent data analysis.

[0082] S135. When the target temperature is stable, record the current leakage current data.

[0083] In this embodiment, when the target temperature is stable, the current leakage current data is recorded, and a high-precision current measuring instrument may be used for recording.

[0084] Obtaining accurate leakage current data is the basis for subsequent analysis and provides the necessary data information for evaluating device performance.

[0085] S136 , determining the junction temperature of the chip of the power device sample according to the recorded leakage current in combination with the temperature-leakage current relationship curve to obtain a test temperature.

[0086] In this embodiment, the junction temperature of the power device sample chip is determined according to the recorded leakage current data in combination with the temperature-leakage current relationship curve to obtain the test temperature.

[0087] By analyzing the relationship between leakage current and temperature, the junction temperature of the device can be accurately calculated, which is crucial for evaluating the performance and safety of the device, helping to identify potential failure modes and optimize the design.

[0088] The detailed implementation of these steps ensures that the temperature test process of power devices is scientific and rigorous, which can effectively improve the accuracy and reliability of test data, and thus provide an important basis for device performance evaluation and optimization. This systematic approach helps improve the overall stability and working performance of the device and reduce potential failure risks.

[0089] The above-mentioned method for determining the temperature of a high-temperature reverse bias test of a power device is as follows: by fixing the power device sample in a heating device and short-circuiting the gate and source to ensure that the circuit is closed for testing; performing a pulse test on the sample to obtain a temperature-leakage current relationship curve to provide data support for subsequent analysis; placing the power device sample on a heat sink to ensure good thermal contact to optimize the heat dissipation effect; gradually increasing the temperature by a staged heating method to avoid thermal shock affecting the test results; maintaining a stable state at the target temperature, recording the leakage current data, and ensuring the consistency of the test environment; combining the recorded leakage current and temperature data to accurately determine the junction temperature of the chip to verify the reliability and accuracy of the high-temperature reverse bias test.

[0090] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A method for determining the temperature of a high-temperature reverse bias test of a power device, characterized in that: include: Fixing the power device sample in the heating device, and short-circuiting the gate and source of the power device sample; Performing a pulse test on the power device sample to obtain a temperature-leakage current relationship curve; The power device sample is placed on a heat sink, and the temperature is raised and stabilized in stages to record the leakage current and further determine the test temperature.

2. A method for determining the temperature of a power device high temperature reverse bias test according to claim 1, characterized in that: The method of fixing the power device sample in the heating device and short-circuiting the gate and source of the power device sample comprises: The power device sample is installed in the heating device, and the gate and source of the power device sample are short-circuited, and the collector and emitter are correctly connected through the leads.

3. A method for determining the temperature of a power device high temperature reverse bias test according to claim 2, characterized in that: The number of the power device samples is at least 2.

4. A method for determining the temperature of a power device high temperature reverse bias test according to claim 1, characterized in that: The pulse testing of the power device sample to obtain a temperature-leakage current relationship curve includes: Heating the power device sample to a predetermined temperature and keeping it stable; After the temperature is stabilized, inputting a short-time pulse voltage to the power device sample; While applying the short-time pulse voltage, synchronously recording the leakage current data and the corresponding temperature of the power device sample; A temperature-leakage current relationship curve is drawn based on the leakage current data and the corresponding temperature.

5. A method for determining the temperature of a power device high temperature reverse bias test according to claim 4, characterized in that: The duration of the short-time pulse voltage does not exceed 1 millisecond.

6. A method for determining the temperature of a power device high temperature reverse bias test according to claim, characterized in that: Placing the power device sample on a heat sink, heating it up in stages and stabilizing it, so as to record the leakage current and then determine the test temperature, comprises: Evenly apply thermal conductive silicone grease on the copper base plate of the power device sample; Mounting the power device sample on a heat sink; The power device sample is heated up in stages and gradually adjusted to a target temperature; After reaching the target temperature, maintaining the target temperature stable; When the target temperature is stable, record the current leakage current data; The junction temperature of the chip of the power device sample is determined according to the recorded leakage current combined with the temperature-leakage current relationship curve to obtain the test temperature.

7. A method for determining the temperature of a power device high temperature reverse bias test according to claim 6, characterized in that: After reaching the target temperature, maintaining the target temperature stable comprises: After reaching the target temperature, the target temperature was kept stable for 2 hours.

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