Top with photon chip integrated on whole chip

Abstract

The invention belongs to the technical field of integrated optics and inertial sensing, and particularly relates to a full-on-chip integrated photon chip gyroscope. The active devices integrated on the silicon-based heterogeneous integrated chip comprise an SLD light source, a thin film lithium niobate modulator and a detector; the passive device integrated on the silicon-based heterogeneous integrated chip comprises an isolator, a one-to-two coupler, a polarizer, a one-to-two coupler and an on-chip waveguide ring; the silicon-based heterogeneous integrated chip is also integrated with a spot size converter, a bending waveguide, a bending waveguide and a spot size converter.

Description

Technical Field

[0001] The invention belongs to the field of integrated optics and inertial sensing technology, and in particular relates to a fully on-chip integrated photonic chip gyroscope. Background Art

[0002] As a key component of the inertial navigation system, the fiber optic gyroscope is widely used in military fields such as aviation, navigation, and land navigation systems due to its relatively low cost, fast startup time, and wide accuracy coverage. The core optical path components of traditional fiber optic gyroscopes mainly include five parts: light source, coupler, modulator, detector, and fiber optic ring. The discrete components are interconnected by fusion splicing, which makes the production process complicated, the quality consistency is difficult to improve, and the size, cost, and production capacity of the product are all limited. With the increasing requirements of weapon equipment systems for miniaturized, low-cost, and highly reliable inertial navigation systems, traditional fiber optic gyroscopes can no longer meet the use requirements of the next generation of weapons and equipment. Summary of the invention

[0003] Technical problem solved by the present invention: The present invention proposes a fully integrated photonic chip gyroscope solution, which realizes the preparation of active and passive heterogeneous integrated chips through micro-transfer technology, eliminates the processes of optical fiber fusion and pigtail winding, greatly reduces the complexity of gyroscope manufacturing process, and shortens the development cycle. The micro-transfer technology used can realize the transfer of graphical small-size III-V group materials and thin-film lithium niobate structures, minimize the chip size, and reduce material waste.

[0004] The technical solution of the present invention:

[0005] A fully on-chip integrated photonic chip gyroscope, which uses a single silicon-based heterogeneous integrated chip to integrate all active and passive components of the gyroscope;

[0006] Specifically, the active devices integrated on the silicon-based heterogeneous integrated chip include: an SLD light source 1-1, a thin-film lithium niobate modulator 1-8, and a detector 1-12;

[0007] The passive devices integrated on the silicon-based heterogeneous integrated chip include: an isolator 1-2, a one-to-two coupler I1-5, a polarizer 1-6, a one-to-two coupler II1-7, and an on-chip waveguide ring 1-10;

[0008] The silicon-based heterogeneous integrated chip also integrates: a pattern spot converter I1-3, a curved waveguide I1-4, a curved waveguide II1-9, and a pattern spot converter II1-11;

[0009] The SLD light source 1-1 is connected to the first input end of the one-to-two coupler I1-5 through the isolator 1-2, the pattern spot converter I1-3, and the curved waveguide I1-4 in sequence; the output end of the one-to-two coupler I1-5 is connected to the polarizer 1-6, and the other side of the polarizer 1-6 is connected to the input end of the one-to-two coupler II1-7; the first output end of the one-to-two coupler II1-7 is connected to the first modulation arm of the thin film lithium niobate modulator 1-8, and the second output end of the one-to-two coupler II1-7 is connected to the second modulation arm of the thin film lithium niobate modulator 1-8; the first output end of the thin film lithium niobate modulator 1-8 is connected to the first input end of the on-chip waveguide ring 1-10, and the second output end of the thin film lithium niobate modulator 1-8 is connected to the second input end of the on-chip waveguide ring 1-10; the second input end of the one-to-two coupler I1-5 is connected to the detector 1-12 through the pattern spot converter II1-11.

[0010] Furthermore,

[0011] The thin film lithium niobate modulator 1-8 includes, in order from the transmission order of light: a SiN-lithium niobate double-layer inverted cone structure, a transferred thin film lithium niobate ridge straight waveguide structure, and a lithium niobate-SiN double-layer inverted cone structure.

[0012] Furthermore,

[0013] The thin film lithium niobate modulator 1-8 is obtained by the following method:

[0014] Firstly, the lithium niobate thin film is patterned by photolithography, and a ridge waveguide, a gold electrode and two inverted cone structures in opposite directions are constructed on the lithium niobate thin film;

[0015] Then, the patterned thin film lithium niobate is removed and transferred to the top of the SiN waveguide by a micro-transfer device, and the interlayer dielectric auxiliary material BCB is filled around the SiN waveguide; two inverted cone structures matching the two inverted cone structures are arranged above the SiN waveguide, thereby forming a SiN-lithium niobate double-layer inverted cone structure and a lithium niobate-SiN double-layer inverted cone structure respectively;

[0016] Finally, an annealing process is performed to make the thin film lithium niobate adhere tightly to the SiN waveguide.

[0017] Furthermore,

[0018] The thickness of the lithium niobate thin film is 300 nm, the etching depth is 180 nm, a 100 nm thick gold film is used as the gold electrode, and the electrode spacing is set to 7 μm.

[0019] Furthermore,

[0020] The wide-spectrum light emitted by the SLD light source 1-1 includes two polarization modes, TE0 and TM0. The isolator 1-2 prevents the light from being transmitted in the reverse direction along the transmission path to the SLD light source 1-1, thereby effectively suppressing spectral modulation. The light is efficiently coupled to the first input end of the one-to-two coupler I1-5 through the mode spot converter I1-3, and enters the polarizer 1-6 through the output end of the one-to-two coupler I1-5. In the polarizer 1-6, the light of the TM0 polarization mode cannot pass normally, leaving only the light of the TE0 mode to pass with low loss. The light of the TE0 mode is equally divided into two parts by the one-to-two coupler II1-7. The two beams of light pass through the two output ends of the one-to-two coupler II1-7, and pass through the SiN-lithium niobate double-layer inverted cone structure on the thin-film lithium niobate modulator 1-8 and the transferred thin-film lithium niobate ridge waveguide high Effective coupling; then connected to the two ends of the on-chip waveguide ring 1-10 through the lithium niobate-SiN double-layer inverted cone on the thin-film lithium niobate modulator 1-8; the two beams of light propagate in the on-chip waveguide ring 1-10 in the clockwise and counterclockwise directions respectively, and meet the coherence condition, and the gyro closed-loop control modulator produces a non-reciprocal phase shift to compensate for the Sagnac phase shift caused by the rotation, and the rotation angular rate information can be obtained by demodulation; the loop light passes through the thin-film lithium niobate modulator 1-8, the one-to-two coupler II1-7, and the polarizer 1-6 to reach the one-to-two coupler I1-5; through the one-to-two coupler I1-5, the light at the first input end of the one-to-two coupler I1-5 is blocked by the isolator 1-2, and the light at the second input end of the one-to-two coupler I1-5 passes through the pattern spot converter II1-11 and reaches the detector 1-12.

[0021] Furthermore,

[0022] The connection between the passive devices in the silicon-based heterogeneous integrated chip 1 is achieved through a silicon-based SiN waveguide with a large aspect ratio, where the large aspect ratio is greater than 10.

[0023] Furthermore,

[0024] The SLD light source 1-1 and the detector 1-12 in the silicon-based heterogeneous integrated chip 1 are realized by transferring micro-patterned III-V group materials onto a silicon-based substrate.

[0025] Furthermore,

[0026] The bending radius of the curved waveguide I1-4 and the curved waveguide II1-9 is designed to meet the critical value, and the bending loss can be ≤ 0.01dB;

[0027] The on-chip waveguide ring 1-10 is implemented by a multi-layer silicon-based SiN waveguide with a large aspect ratio, and the interlayer waveguide adopts a double-layer inverted cone structure to achieve efficient coupling. The thickness of the on-chip waveguide ring is 0.1um and the waveguide width is 2μm.

[0028] Furthermore,

[0029] The mode spot converter I1-3 and the mode spot converter II1-11 adopt a linear inverted cone structure with a central wavelength of 1310nm or 1550nm, respectively realizing the mode field matching between the SLD light source 1-1 and the one-to-two coupler I1-5, and the one-to-two coupler I1-5 and the detector 1-12;

[0030] The one-to-two coupler I1-5 and the one-to-two coupler II1-7 adopt a 1×2 multimode interference structure, and the input / output waveguides are placed at positions offset by ±w / 6 relative to the center of the multimode interference zone, where w is the width of the multimode interference zone.

[0031] Integrated photonic chips can realize full on-chip integration and large-scale mass production of the gyroscope optical path system, greatly reducing the optical path size and manufacturing cost of the gyroscope, while improving product consistency, reliability and production efficiency. It is an inevitable trend in the development of the next generation of optical gyroscopes.

[0032] The present invention proposes a fully integrated photonic chip gyroscope solution, which realizes the preparation of active and passive heterogeneous integrated chips through micro-transfer technology, eliminates the processes of fiber fusion and pigtail winding, greatly reduces the complexity of gyroscope manufacturing process, and shortens the development cycle. The micro-transfer technology used can realize the transfer of small-sized III-V group materials and thin-film lithium niobate structures in a graphical manner, minimize the chip size, and reduce material waste.

[0033] The heterogeneous integrated chip in the present invention adopts a semiconductor process compatible with COMS, which can greatly improve product consistency, production efficiency, and reduce manufacturing costs. The monolithic integration and overall packaging of the gyro optical path device, combined with the ASIC circuit, greatly reduces the overall size and cost of the gyro, and improves the long-term reliability of the gyro performance, meeting the miniaturization and lightweight requirements of future weapon systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A schematic diagram of a fully on-chip integrated photonic chip gyroscope solution of the present invention;

[0035] Figure 2 (a) is a schematic diagram of a light source-waveguide spot converter; (b) is a schematic diagram of a detector-waveguide spot converter;

[0036] Figure 3 It is a 1×2MMI coupler structure;

[0037] Figure 4 This is a schematic diagram of the structure of a thin film lithium niobate modulator;

[0038] Figure 5 Schematic diagram of a double-layer inverted cone structure. DETAILED DESCRIPTION

[0039] In view of the shortcomings of traditional fiber optic gyroscopes, such as large size, complex process, high cost, and low production capacity caused by the use of discrete optical path devices, the present invention provides a gyroscope solution with full on-chip integration of photonic chips.

[0040] The present invention is further described in detail with reference to the accompanying drawings.

[0041] See also Figure 1 The fully integrated photonic chip gyroscope of the present invention is mainly composed of a silicon-based heterogeneous integrated chip 1, a TEC 2, and a control circuit 3. The control circuit is used to apply a modulation signal to the modulator 1-8, and at the same time, to supply power to the light source 1-1 and the temperature control module TEC 2 and to demodulate the optical signal output by the silicon-based heterogeneous integrated chip 1.

[0042] The silicon-based heterogeneous integrated chip integrates: SLD light source 1-1, isolator 1-2, spot converter I1-3, curved waveguide I1-4, one-to-two coupler I1-5, polarizer 1-6, one-to-two coupler II1-7, thin film lithium niobate modulator 1-8, curved waveguide II1-9, on-chip waveguide ring 1-10, spot converter II1-11, and detector 1-12.

[0043] The SLD light source 1-1 passes through the isolator 1-2, and is connected to the first input end of the one-to-two coupler I1-5 through the pattern spot converter I1-3 and the curved waveguide I1-4. The output end of the one-to-two coupler is connected to the polarizer 1-6, and the other side of the polarizer 1-6 is connected to the input end of the one-to-two coupler II1-7; the first output end of the one-to-two coupler II is connected to the first modulation arm of the thin film lithium niobate modulator 1-8, and the second output end of the one-to-two coupler II is connected to the second modulation arm of the thin film lithium niobate modulator 1-8; the first output end of the thin film lithium niobate modulator 1-8 is connected to the first input end of the on-chip waveguide ring 1-10, and the second output end of the thin film lithium niobate modulator 1-8 is connected to the second input end of the on-chip waveguide ring 1-10; the other input end of the one-to-two coupler I1-5 is connected to the detector 1-12 through the pattern spot converter II1-11.

[0044] The wide-spectrum light emitted by the SLD light source 1-1 includes two polarization modes, TE0 and TM0. The isolator 1-2 prevents the light from being transmitted in the reverse direction along the transmission path to the SLD light source 1-1, thereby effectively suppressing spectral modulation. The light is efficiently coupled to the first input end of the one-to-two coupler I1-5 through the mode spot converter I1-3, and enters the polarizer 1-6 through the output end of the one-to-two coupler I1-5. In the polarizer 1-6, the light of the TM0 polarization mode cannot pass normally, leaving only the light of the TE0 mode to pass with low loss. The light of the TE0 mode is equally divided into two parts of 50%:50% through the one-to-two coupler II1-7. The two beams of light pass through the two output ends of the one-to-two coupler II1-7, and are efficiently coupled with the transferred thin-film lithium niobate ridge straight waveguide through the SiN-lithium niobate double-layer inverted cone structure, and enter the thin-film niobate. Lithium modulator 1-8; two output ends of the thin-film lithium niobate modulator 1-8 are connected to two ends of the on-chip waveguide ring 1-10 through a lithium niobate-SiN double-layer inverted cone; two beams of light propagate in the on-chip waveguide ring 1-10 in the clockwise and counterclockwise directions respectively, and meet the coherence condition, and the gyro closed-loop control modulator produces a non-reciprocal phase shift to compensate for the Sagnac phase shift caused by the rotation, and the rotation angular velocity information can be obtained by demodulation; the loop light reaches the one-to-two coupler I1-5 through the thin-film lithium niobate modulator 1-8, the one-to-two coupler II1-7, and the polarizer 1-6; through the one-to-two coupler I1-5, the light at the first input end of the one-to-two coupler I1-5 is blocked by the isolator 1-2, and the light at the second input end of the one-to-two coupler I1-5 passes through the pattern spot converter II1-11 and reaches the detector 1-12.

[0045] The passive components of the pattern spot converter I1-3, curved waveguide I1-4, one-to-two coupler I1-5, polarizer 1-6, one-to-two coupler II1-7, curved waveguide II1-9, on-chip waveguide ring 1-10, and pattern spot converter II1-11 in the silicon-based heterogeneous integrated chip 1 are realized by a silicon-based SiN waveguide with a large aspect ratio ≥10.

[0046] The SLD light source 1-1 and detector 1-12 in the silicon-based heterogeneous integrated chip 1 are realized by transferring tiny patterned III-V group materials on a silicon-based substrate; the thin-film lithium niobate modulator 1-8 is realized by transferring and integrating small-sized thin-film lithium niobate on a silicon-based SiN waveguide.

[0047] The designed bending radii of the curved waveguide I1-4 and the curved waveguide II1-9 meet the critical value and can achieve bending loss ≤ 0.01 dB.

[0048] The polarizer 1-6 adopts an absolute single-mode waveguide solution, and realizes the selection of polarization state by accurately controlling the waveguide width. During the transmission process, the waveguide width gradually narrows to a critical value, so that the light of the TM0 polarization mode cannot pass normally, leaving only the light of the TE0 mode to pass with low loss, thereby realizing a high extinction ratio polarizer greater than >60dB.

[0049] The thin-film lithium niobate modulator 1-8 is integrated on-chip using micro-transfer technology, which can realize the transfer of patterned small-size thin-film lithium niobate structures and minimize the size. Micro-transfer can transfer multiple structures simultaneously, which is a large-scale process, excluding the thin-film lithium niobate dry etching process that is incompatible with CMOS from the large-scale CMOS process.

[0050] The structural diagram of the thin film lithium niobate modulator 1-8 is shown in Figure 4 First, the thin-film lithium niobate is patterned by photolithography and etching processes to construct a ridge waveguide, and then the thin-film lithium niobate LNTF is removed with a suitable polymer BCB, and is accurately transferred to the top of the SiN waveguide using a micro-transfer device, and the interlayer dielectric auxiliary material is filled around the SiN waveguide, and finally the annealing process is used to make it adhere tightly to the top of the SiN waveguide. In the embodiment of the present invention, the thickness of the thin-film lithium niobate is 300nm, the etching depth is 180nm, a 100nm thick gold film is used as the electrode, and the electrode spacing is set to 7μm.

[0051] The efficient coupling of the thin film lithium niobate modulator 1-8 with the SiN on-chip waveguide ring 1-10 and the one-to-two coupler II1-7 is achieved through the SiN-lithium niobate double-layer inverted cone structure. By overlaying and etching the SiN waveguide layer and the thin film lithium niobate double layer, a coupling efficiency as low as about 2dB can be achieved. For a schematic diagram of the structure, see Figure 5 .

[0052] The thin film lithium niobate modulator 1-8 uses a ridge straight waveguide as a modulation arm. The modulation signal applied by the gold electrodes on both sides of the modulation arm directly acts on the thin film lithium niobate material. The modulation rate can reach GHz and the modulation efficiency is high.

[0053] The on-chip waveguide ring 1-10 is implemented by a multi-layer silicon-based SiN waveguide with a large aspect ratio, and the interlayer waveguide adopts a double-layer inverted cone structure to achieve efficient coupling. Through the silicon nitride thin film material with a low-loss deposition process, the waveguide loss can be as low as 0.01dB / cm after high-temperature annealing. The silicon nitride waveguide has lower bending loss. In this implementation case, the thickness of the SiN waveguide ring is 0.1um and the waveguide width is 2μm;

[0054] The overall temperature of the silicon-based heterogeneous integrated chip 1 is controlled by TEC2, thereby reducing the wavelength drift of the SLD light source 1-1 and improving the modulation efficiency of the thin-film lithium niobate modulator 1-8.

[0055] The pattern converter I1-3 and pattern converter II1-11 adopt a linear inverted cone structure, such as Figure 2 As shown, the central wavelength is 1310nm or 1550nm, respectively realizing the mode field matching between the SLD light source 1-1 and the one-to-two coupler I1-5, and the one-to-two coupler I1-5 and the detector 1-12.

[0056] The one-to-two coupler I1-5 and the one-to-two coupler II1-7 adopt a 1×2 multi-mode interference MMI structure, such as Figure 3 As shown, the input / output waveguides are respectively placed at a position offset ±w / 6 relative to the center of the MMI multimode interference zone, where w is the width of the multimode interference zone. By controlling the length of the coupling zone, a 50%:50% splitting ratio is achieved, with a central wavelength of 1310nm or 1550nm. In the embodiment of the present invention, the SiN chip waveguide has a width of 2μm and a height of 0.1μm.

[0057] Integrated photonic chips can realize full on-chip integration and large-scale mass production of the gyroscope optical path system, greatly reducing the optical path size and manufacturing cost of the gyroscope, while improving product consistency, reliability and production efficiency. It is an inevitable trend in the development of the next generation of optical gyroscopes.

[0058] The present invention proposes a fully integrated photonic chip gyroscope solution, which realizes the preparation of active and passive heterogeneous integrated chips through micro-transfer technology, eliminates the processes of fiber fusion and pigtail winding, greatly reduces the complexity of gyroscope manufacturing process, and shortens the development cycle. The micro-transfer technology used can realize the transfer of small-sized III-V group materials and thin-film lithium niobate structures in a graphical manner, minimize the chip size, and reduce material waste.

[0059] The heterogeneous integrated chip in the present invention adopts a semiconductor process compatible with COMS, which can greatly improve product consistency, production efficiency, and reduce manufacturing costs. The monolithic integration and overall packaging of the gyro optical path device, combined with the ASIC circuit, greatly reduces the overall size and cost of the gyro, and improves the long-term reliability of the gyro performance, meeting the miniaturization and lightweight requirements of future weapon systems.

Claims

1. A fully on-chip integrated photonic chip gyroscope, characterized in that: All active and passive components of the gyroscope are integrated using a single silicon-based heterogeneous integrated chip; Specifically, the active devices integrated on the silicon-based heterogeneous integrated chip include: an SLD light source (1-1), a thin-film lithium niobate modulator (1-8), and a detector (1-12); The passive devices integrated on the silicon-based heterogeneous integrated chip include: an isolator (1-2), a one-to-two coupler I (1-5), a polarizer (1-6), a one-to-two coupler II (1-7), and an on-chip waveguide ring (1-10); The silicon-based heterogeneous integrated chip also integrates: a pattern spot converter I (1-3), a curved waveguide I (1-4), a curved waveguide II (1-9), and a pattern spot converter II (1-11); The SLD light source (1-1) is connected to the first input end of a one-to-two coupler I (1-5) in sequence through an isolator (1-2), a pattern spot converter I (1-3), and a bending waveguide I (1-4); the output end of the one-to-two coupler I (1-5) is connected to a polarizer (1-6); the other side of the polarizer (1-6) is connected to the input end of a one-to-two coupler II (1-7); the first output end of the one-to-two coupler II (1-7) is connected to the first modulation arm of a thin-film lithium niobate modulator (1-8) The second output end of the one-to-two coupler II (1-7) is connected to the second modulation arm of the thin film lithium niobate modulator (1-8); the first output end of the thin film lithium niobate modulator (1-8) is connected to the first input end of the on-chip waveguide ring (1-10), and the second output end of the thin film lithium niobate modulator (1-8) is connected to the second input end of the on-chip waveguide ring (1-10); the second input end of the one-to-two coupler I (1-5) is connected to the detector (1-12) through the pattern spot converter II (1-11).

2. The fully on-chip integrated photonic chip gyroscope according to claim 1, characterized in that: The thin film lithium niobate modulator (1-8) comprises, in order of light transmission: a SiN-lithium niobate double-layer inverted cone structure, a transferred thin film lithium niobate ridge straight waveguide structure, and a lithium niobate-SiN double-layer inverted cone structure.

3. The fully on-chip integrated photonic chip gyroscope according to claim 2, characterized in that: The thin film lithium niobate modulator (1-8) is obtained by the following method: Firstly, the lithium niobate thin film is patterned by photolithography, and a ridge waveguide, a gold electrode and two inverted cone structures in opposite directions are constructed on the lithium niobate thin film; Then, the patterned thin film lithium niobate is removed and transferred to the top of the SiN waveguide by a micro-transfer device, and the interlayer dielectric auxiliary material BCB is filled around the SiN waveguide; two inverted cone structures matching the two inverted cone structures are arranged above the SiN waveguide, thereby forming a SiN-lithium niobate double-layer inverted cone structure and a lithium niobate-SiN double-layer inverted cone structure respectively; Finally, an annealing process is performed to make the thin film lithium niobate adhere tightly to the SiN waveguide.

4. The fully on-chip integrated photonic chip gyroscope according to claim 3, characterized in that: The lithium niobate thin film has a thickness of 300 nm and an etching depth of 180 nm. A 100 nm thick gold film is used as a gold electrode, and the electrode spacing is set to 7 μm.

5. The fully on-chip integrated photonic chip gyroscope according to claim 3, characterized in that: The wide spectrum light emitted by the SLD light source (1-1) includes two polarization modes, TE0 and TM0. The light is prevented from being transmitted in the reverse direction to the SLD light source (1-1) along the transmission path through the isolator (1-2), thereby effectively suppressing spectral modulation. The light is efficiently coupled to the first input end of the one-to-two coupler I (1-5) through the mode spot converter I (1-3), and enters the polarizer (1-6) through the output end of the one-to-two coupler I (1-5). In the polarizer (1-6), the light of the TM0 polarization mode cannot pass normally, leaving only the light of the TE0 mode to pass with low loss. The light of the TE0 mode is equally divided into two parts through the one-to-two coupler II (1-7). The two beams of light pass through the two output ends of the one-to-two coupler II (1-7), and are efficiently coupled to the thin-film lithium niobate ridge waveguide through the SiN-lithium niobate double-layer inverted cone structure on the thin-film lithium niobate modulator (1-8). The two light beams are connected to the two ends of the on-chip waveguide ring (1-10) through the lithium niobate-SiN double-layer inverted cone on the thin-film lithium niobate modulator (1-8); the two light beams propagate in the on-chip waveguide ring (1-10) in the clockwise and counterclockwise directions respectively and meet the coherence condition, and the gyro closed-loop control modulator is used to generate a non-reciprocal phase shift to compensate for the Sagnac phase shift caused by the rotation, and the rotation angular rate information can be obtained by demodulation; the return light reaches the one-to-two coupler I (1-5) through the thin-film lithium niobate modulator (1-8), the one-to-two coupler II (1-7), and the polarizer (1-6); after passing through the one-to-two coupler I (1-5), the light at the first input end of the one-to-two coupler I (1-5) is blocked by the isolator (1-2), and the light at the second input end of the one-to-two coupler I (1-5) passes through the pattern spot converter II (1-11) and reaches the detector (1-12).

6. The fully on-chip integrated photonic chip gyroscope according to claim 1, characterized in that: The connection between the passive devices in the silicon-based heterogeneous integrated chip 1 is achieved through a silicon-based SiN waveguide with a large aspect ratio, where the large aspect ratio is greater than 10.

7. The fully on-chip integrated photonic chip gyroscope according to claim 1, characterized in that: The SLD light source (1-1) and the detector (1-12) in the silicon-based heterogeneous integrated chip 1 are realized by transferring micro-patterned III-V group materials onto a silicon-based substrate.

8. The fully on-chip integrated photonic chip gyroscope according to claim 1, characterized in that: The bending radius of the curved waveguide I (1-4) and the curved waveguide II (1-9) is designed to meet the critical value and can achieve a bending loss of ≤0.01dB; The on-chip waveguide ring (1-10) is implemented by adopting a multi-layer silicon-based SiN waveguide with a large aspect ratio, and the interlayer waveguide adopts a double-layer inverted cone structure to achieve efficient coupling. The thickness of the on-chip waveguide ring is 0.1um, and the waveguide width is 2μm.

9. The fully on-chip integrated photonic chip gyroscope according to claim 1, characterized in that: The mode spot converter I (1-3) and the mode spot converter II (1-11) adopt a linear inverted cone structure with a central wavelength of 1310nm or 1550nm, respectively realizing mode field matching between the SLD light source (1-1) and the one-to-two coupler I (1-5), and between the one-to-two coupler I (1-5) and the detector (1-12); The one-to-two coupler I (1-5) and the one-to-two coupler II (1-7) adopt a 1×2 multimode interference structure, and the input / output waveguides are placed at positions offset by ±w / 6 relative to the center of the multimode interference zone, where w is the width of the multimode interference zone.

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