Novel ion implanter and control method thereof

Abstract

The invention relates to the field of ion implantation, in particular to a novel ion implanter and a control method thereof, and the novel ion implanter comprises an ion emission source and a mechanical arm; the ion emission source is used for emitting an ion injection beam; the mechanical arm comprises an electrostatic clamp and a first charge detector; the electrostatic clamp and the first charge detector are arranged on the surface, facing the ion emission source, of the mechanical arm; the electrostatic clamp is used for fixing a wafer to be processed; the first charge detector and the to-be-processed wafer pass through an irradiation area of the ion implantation beam along with the movement of the mechanical arm, and the first charge detector is not shielded by the to-be-processed wafer and the electrostatic clamp. According to the invention, the first charge detector is arranged on the mechanical arm of the novel ion implanter, and the first charge detector passes through the ion implantation beam together with the wafer to be processed, so that the charge accumulation condition on the wafer to be processed is monitored in real time in the ion implantation process, and the process quality of ion implantation is improved.

Description

Technical Field

[0001] The invention relates to the field of ion implantation, and in particular to a novel ion implantation machine and a control method thereof. Background Art

[0002] In the large-scale integrated circuit manufacturing industry, ion implantation technology undertakes important tasks such as changing the local electrical properties of the wafer, changing the surface characteristics of the wafer and assisting other process steps. With its unique advantages such as high purity of doped ions, precise doping dosage, easy control of the distribution characteristics of doped ions inside the wafer, high process repeatability, less lateral diffusion and low processing temperature, it plays an increasingly important role in today's semiconductor integrated circuit manufacturing industry where feature sizes are shrinking. In particular, the formation of ultra-shallow junctions requires that ions have a higher doping concentration and a shallower distribution depth on the surface of the wafer, and the lateral diffusion of ions must be suppressed. In ion implantation technology, by controlling the energy of the injected ions, the enrichment depth of the doped ions in the wafer can be controlled, and by controlling the overall dose of the implantation, the doping concentration of the ions in the wafer can be controlled, which can meet requirements that cannot be achieved by traditional furnace tube thermal diffusion doping technology.

[0003] The ion implanter uses a series of electric and magnetic fields to achieve extraction, acceleration and deceleration, screening and other operations. Therefore, its target is cations. The cations in the beam are continuously injected into the wafer, and the positive charge on the wafer surface continues to accumulate, which will produce a series of adverse effects. For example, the positive charge on the wafer surface will repel the subsequent injection of cations, the positive charge causes discharge, damages the device, and produces a large number of surface defects. In order to prevent the accumulation of positive charges on the wafer surface caused by this continuous injection, the ion implanter usually provides a certain amount of electrons to the beam to neutralize the high potential generated by the cations. Therefore, the ion implanter is equipped with an electron gun (PFG, Plasma Flood Gun). The principle is that the cathode filament in the electron gun generates electrons, and the electrons are attracted by the positively charged cations in the beam and introduced into the beam, thereby completing the neutralization of the beam cations. The electron gun is usually set at the back end of the ion implanter. When the beam completes the element and energy screening, and the parallelism and uniformity meet the requirements, it is about to be injected into the wafer, thereby reducing the impact on the beam. The electron gun of the current ion implanter relies on the attraction of the positive charge of the cations in the beam to passively generate electrons that enter the beam to be injected into the wafer. Therefore, the number of electrons introduced into the beam by the PFG is related to factors such as the beam ion charge and the beam size. In the current production process, the working condition of the PFG of the ion implanter needs to be monitored by a specific charge monitoring simulation injection process. Therefore, the number of electrons introduced into the beam and the charge accumulation on the wafer surface cannot be directly reflected. If the PFG releases too few or too many electrons, we usually cannot monitor it in time, which may cause a discharge effect on the wafer surface, which is not conducive to the controllability and stability of the ion implantation process.

[0004] Therefore, how to effectively monitor the charge accumulation on the wafer surface in an ion implanter is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0005] The purpose of the present invention is to provide a novel ion implanter and a control method thereof, so as to solve the problem in the prior art that the charge accumulation on the surface of the wafer in the ion implanter cannot be effectively monitored.

[0006] In order to solve the above technical problems, the present invention provides a novel ion implanter, comprising an ion emission source and a mechanical arm;

[0007] The ion emission source is used to emit an ion implantation beam;

[0008] The mechanical arm comprises an electrostatic clamp and a first charge detector; the electrostatic clamp and the first charge detector are arranged on a surface of the mechanical arm facing the ion emission source;

[0009] The electrostatic clamp is used to fix the wafer to be processed;

[0010] The first charge detector and the wafer to be processed pass through the irradiation area of ​​the ion implantation beam as the robot moves, and the first charge detector is not blocked by the wafer to be processed and the electrostatic clamp.

[0011] Optionally, in the novel ion implanter, a plurality of the first charge detectors are provided on the mechanical arm;

[0012] A plurality of said first charge detectors enclose a detection area;

[0013] The detection area overlaps with a setting area of ​​the wafer to be processed.

[0014] Optionally, in the novel ion implanter, the novel ion implanter comprises a beam profiler;

[0015] The beam profiler includes a Faraday cup and a second charge detector;

[0016] The second charge detector and the Faraday cup are arranged on a surface of the beam profiler facing the ion emission source, and the second charge detector and the Faraday cup are located in an irradiation area of ​​the ion implantation beam.

[0017] Optionally, in the novel ion implanter, the distance between the second charge detector and the Faraday cup in a direction perpendicular to the ion implantation beam ranges from 3 mm to 7 mm, including end points.

[0018] Optionally, in the novel ion implanter, a process chamber is included, and the robot arm is arranged in the process chamber;

[0019] Also included is a third charge detector;

[0020] The third charge detector is disposed on the inner wall of the process chamber and is located in an irradiation area of ​​the ion implantation beam.

[0021] Optionally, the novel ion implanter further includes an active electron gun;

[0022] The active electron gun is located between the ion emission source and the mechanical arm, and the emission port of the active electron gun faces the side of the ion implantation beam;

[0023] The active electron gun includes a filament, an open electrode plate, a pressurized power supply and a controller;

[0024] The filament is used to generate electrons;

[0025] The open electrode plate is arranged at the emission port of the electron gun and connected to the positive electrode of the pressurized power supply, so that the electrons generated by the filament move toward the open electrode plate;

[0026] The controller is used to adjust the voltage applied by the pressurized power source to the open electrode plate.

[0027] Optionally, in the novel ion implanter, the active electron gun further comprises a graphite lining, and the graphite lining is grounded.

[0028] Optionally, in the novel ion implanter, the novel ion implanter comprises two of the active electron guns;

[0029] The two active electron guns are arranged opposite to each other on both sides of the ion implantation beam.

[0030] Optionally, in the novel ion implanter, the ion implantation beam is a one-dimensional linear ion beam;

[0031] The emission port of the active electron gun is oriented perpendicular to the linear cross section of the one-dimensional linear ion beam.

[0032] A control method for a novel ion implanter, the control method for the novel ion implanter being used for any of the novel ion implanters described above, comprising:

[0033] acquiring ion implantation beam charge quantity information from at least one of the first charge detector, the second charge detector, and the third charge detector;

[0034] Sending the ion beam charge amount information to the controller, so that the controller determines voltage adjustment information according to the ion beam charge amount information;

[0035] The voltage adjustment information is sent to the pressure power source, so that the pressure power source adjusts the voltage applied to the open electrode plate according to the voltage adjustment information.

[0036] The new ion implanter provided by the present invention comprises an ion emission source and a mechanical arm; the ion emission source is used to emit an ion implantation beam; the mechanical arm comprises an electrostatic clamp and a first charge detector; the electrostatic clamp and the first charge detector are arranged on the surface of the mechanical arm facing the ion emission source; the electrostatic clamp is used to fix the wafer to be processed; the first charge detector and the wafer to be processed pass through the irradiation area of ​​the ion implantation beam with the movement of the mechanical arm, and the first charge detector is not blocked by the wafer to be processed and the electrostatic clamp. The present invention sets a first charge detector on the mechanical arm of the new ion implanter, and the first charge detector passes through the ion implantation beam together with the wafer to be processed, so as to realize real-time monitoring of the charge accumulation on the wafer to be processed during the ion implantation process and improve the process quality of ion implantation. The present invention also provides a control method for a new ion implanter having the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0038] Figure 1 A schematic structural diagram of a specific implementation mode of the novel ion implanter provided by the present invention;

[0039] Figure 2 A schematic diagram of the partial structure of a specific implementation of the novel ion implanter provided by the present invention;

[0040] Figure 3 A schematic diagram of the partial structure of a specific implementation of the novel ion implanter provided by the present invention;

[0041] Figure 4 A structural schematic diagram of another specific implementation mode of the novel ion implanter provided by the present invention;

[0042] Figure 5 A schematic bottom view of the structure of another specific implementation mode of the novel ion implanter provided by the present invention;

[0043] Figure 6 A schematic flow chart of a specific implementation of the control method of the novel ion implanter provided by the present invention.

[0044] In the figure, it includes 01-wafer to be processed, 10-ion emission source, 10a-ion implantation beam, 20-robot arm, 21-electrostatic clamp, 22-first charge detector, 22a-detection area, 30-beam profiler, 31-Faraday cup, 32-second charge detector, 41-third charge detector, 51-filament, 52-open electrode plate, 53-pressurized power supply, 54-controller. DETAILED DESCRIPTION

[0045] In order to enable those skilled in the art to better understand the scheme of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0046] The core of the present invention is to provide a new type of ion implanter, a structural schematic diagram of a specific implementation method thereof is shown in FIG. Figure 1 As shown, it is called specific embodiment 1, including an ion emission source 10 and a mechanical arm 20;

[0047] The ion emission source 10 is used to emit an ion implantation beam 10a;

[0048] The mechanical arm 20 includes an electrostatic clamp 21 and a first charge detector 22; the electrostatic clamp 21 and the first charge detector 22 are arranged on a surface of the mechanical arm 20 facing the ion emission source 10;

[0049] The electrostatic clamp 21 is used to fix the wafer 01 to be processed;

[0050] The first charge detector 22 and the wafer to be processed 01 pass through the irradiation area of ​​the ion implantation beam 10 a as the robot arm 20 moves, and the first charge detector 22 is not blocked by the wafer to be processed 01 and the electrostatic clamp 21 .

[0051] In order to improve the controllability of charge injection, the robot arm 20 will drive the chip to be processed 01 to move in a direction perpendicular to the ion implantation beam 10a, and the irradiation area of ​​the ion implantation beam 10a covers a small area within the movement trajectory of the chip to be processed 01, so that each unidirectional movement of the robot arm 20 will pass through the irradiation area to allow the chip to be processed 01 to be implanted with ions. By adjusting the position of the plane where the chip to be processed 01 moves in the axial direction of the ion implantation beam 10a, and the movement speed of the robot arm 20 (also called scanning speed), the rate and uniformity of ion implantation can be controlled. Figure 2 It is a schematic diagram of the enlarged structure of the robot arm 20.

[0052] As a specific implementation, the mechanical arm 20 is provided with a plurality of the first charge detectors 22;

[0053] The plurality of first charge detectors 22 enclose a detection area 22a;

[0054] The detection area 22a overlaps with the setting area of ​​the wafer to be processed 01.

[0055] In this specific embodiment, a plurality of the first charge detectors 22 are arranged around the wafer to be processed 01. Of course, all of the first charge detectors 22 pass through the irradiation area of ​​the ion implantation beam 10a during the movement of the robot arm 20. Figure 3 This setting method can obtain the charge injection situation at each position in the irradiation area according to the first charge detector 22 set at different positions, assist the staff or the system to make a more accurate judgment on the charge accumulation situation on the processed wafer 01, and when there is an obvious abnormality in the overall charge of the ion implantation beam 10a, the injection is interrupted in time or a warning is issued to the engineer. Figure 3 In the embodiment, four first charge detectors 22 are arranged around the wafer to be processed 01. Preferably, the wafer to be processed 01 is arranged at the central position of the detection area 22a. Of course, other numbers of the first charge detectors 22 may be arranged, such as 5, 8, etc., which are not limited in the present invention. The first charge detector 22 may be arranged at a distance of 5 mm to 10 mm from the wafer to be processed 01, which may be selected according to actual conditions.

[0056] In addition, the novel ion implanter includes a beam profiler 30;

[0057] The beam profiler 30 includes a Faraday cup 31 and a second charge detector 32;

[0058] The second charge detector 32 and the Faraday cup 31 are disposed on a surface of the beam profiler 30 facing the ion emission source 10 , and the second charge detector 32 and the Faraday cup 31 are located in an irradiation area of ​​the ion implantation beam 10 a .

[0059] In this specific embodiment, a charge detector is also installed for the beam profiler 30. In the beam adjustment (Beam Check) stage before the formal ion injection, the beam profiler 30 will extend into the ion injection beam 10a to detect the beam size and beam parallelism at various positions in the ion injection beam 10a. On the beam profiler 30, the second charge detector 32 is set next to the Faraday cup 31 for detecting the size of the ion injection beam 10a, so as to detect the charge condition of the ion injection beam 10a in the beam adjustment stage, so that the new ion implanter can run more stably after entering the formal ion injection stage.

[0060] Further, the distance between the second charge detector 32 and the Faraday cup 31 in the direction perpendicular to the ion implantation beam 10a ranges from 3 mm to 7 mm, including endpoint values, such as any one of 3.0 mm, 4.7 mm or 7.0 mm. Of course, it can also be adjusted according to actual conditions, and the present invention is not limited here.

[0061] Furthermore, it comprises a process chamber, wherein the robot arm 20 is arranged in the process chamber;

[0062] Also included is a third charge detector 41;

[0063] The third charge detector 41 is disposed on the inner wall of the process chamber and is located in the irradiation area of ​​the ion implantation beam 10 a .

[0064] In this specific embodiment, a charge detector is also provided on the inner wall of the process chamber of the ion implanter, which is used to detect the charge status of the ion implantation beam 10a in the beam adjustment stage and the formal injection stage. During the injection process, when the ion implantation beam 10a is injected into the surface of the wafer 01 to be processed, the third charge detector 41 on the inner wall of the process chamber will be blocked. At this time, the third charge detector 41 has no charge reading. When the robot arm 20 passes through the ion implantation beam 10a, the third charge detector 41 on the inner wall of the process chamber can detect the charge status in the ion implantation beam 10a. The first charge detector 22 is combined with the third charge detector 41 to realize the charge monitoring of the ion implantation beam 10a at all times. Of course, there can be one or more third charge detectors 41, which are not limited here.

[0065] It should be noted that the first charge detector 22, the second charge detector 32 and the third charge detector 41 only represent charge detectors arranged at different positions, and the three can use the same type of charge detector. Through the charge detectors at the above three positions, the charge accumulation of the processed wafer 01 and the working condition of the electron gun (PFG) can be monitored in the beam adjustment stage before the start of injection and in the formal ion injection process. The detected charge data and stability can replace the traditional analog monitoring method, which greatly improves the accuracy of obtaining monitoring data.

[0066] At the same time, based on the charge data measured by each charge detector during each ion implantation process and compared with the long-term database, the charge status and stability of the ion implantation beam 10a can be reflected, and the health status of the electron gun can be reflected, thereby replacing specific charge detection methods.

[0067] The novel ion implanter provided by the present invention comprises an ion emission source 10 and a mechanical arm 20; the ion emission source 10 is used to emit an ion implantation beam 10a; the mechanical arm 20 comprises an electrostatic clamp 21 and a first charge detector 22; the electrostatic clamp 21 and the first charge detector 22 are arranged on the surface of the mechanical arm 20 facing the ion emission source 10; the electrostatic clamp 21 is used to fix the wafer to be processed 01; the first charge detector 22 and the wafer to be processed 01 pass through the irradiation area of ​​the ion implantation beam 10a with the movement of the mechanical arm 20, and the first charge detector 22 is not blocked by the wafer to be processed 01 and the electrostatic clamp 21. The present invention arranges the first charge detector 22 on the mechanical arm 20 of the novel ion implanter, and the first charge detector 22 passes through the ion implantation beam 10a together with the wafer to be processed 01, so as to realize real-time monitoring of the charge accumulation on the wafer to be processed 01 during the ion implantation process and improve the process quality of ion implantation.

[0068] On the basis of the above specific implementation, the novel ion implanter is further improved to obtain a second specific implementation, and its corresponding structural schematic diagram is shown as follows: Figure 4 As shown, it includes an ion emission source 10 and a mechanical arm 20;

[0069] The ion emission source 10 is used to emit an ion implantation beam 10a;

[0070] The mechanical arm 20 includes an electrostatic clamp 21 and a first charge detector 22; the electrostatic clamp 21 and the first charge detector 22 are arranged on a surface of the mechanical arm 20 facing the ion emission source 10;

[0071] The electrostatic clamp 21 is used to fix the wafer 01 to be processed;

[0072] The first charge detector 22 and the wafer to be processed 01 pass through the irradiation area of ​​the ion implantation beam 10a along with the movement of the robot arm 20, and the first charge detector 22 is not blocked by the wafer to be processed 01 and the electrostatic clamp 21;

[0073] Also included is an active electron gun;

[0074] The active electron gun is located between the ion emission source 10 and the mechanical arm 20, and the emission port of the active electron gun faces the side of the ion implantation beam 10a;

[0075] The active electron gun includes a filament 51, an open electrode plate 52, a pressurized power supply 53 and a controller 54;

[0076] The filament 51 is used to generate electrons;

[0077] The open electrode plate 52 is disposed at the emission port of the electron gun and connected to the positive electrode of the pressurized power source 53, so that the electrons generated by the filament 51 move toward the open electrode plate 52;

[0078] The controller 54 is used to adjust the voltage applied by the pressurized power source 53 to the open electrode plate 52 .

[0079] The difference between this specific embodiment and the above specific embodiment is that in this specific embodiment, the active electron gun is added to the new ion implanter, and the remaining structures are the same as the above specific embodiments, which will not be elaborated here. In this specific embodiment, the passive electron gun in the related art (that is, relying on the positive charge carried by the ion implantation beam 10a to attract electrons) is no longer used, but an active electron gun is used. By adjusting the voltage on the open electrode plate 52, the attraction of the electrons generated by the filament 51 is changed, thereby changing the number of electrons entering the ion implantation beam 10a. In combination with the first charge detector 22 in this specific embodiment, the amount of electrons emitted by the active electron gun is closed-loop controlled using the obtained charge data, so that the electron neutralization effect of the entire active electron gun is more stable and reliable, further improving the quality of the ion implantation process.

[0080] In addition, the electrons generated by the filament 51 are attracted by the open electrode plate 52, move toward the open electrode plate 52, and finally pass through the opening on the open electrode plate 52 to be emitted from the active electron gun. In other words, the opening on the open electrode plate 52 is the emission port of the active electron gun.

[0081] Furthermore, the active electron gun further comprises a graphite liner, and the graphite liner is grounded. Adding a grounded graphite liner to the active electron gun can prevent the internal charge accumulation of the active electron gun, so that the active electron gun has the ability to stably generate electrons.

[0082] Furthermore, the novel ion implanter comprises two active electron guns;

[0083] The two active electron guns are disposed opposite to each other on both sides of the ion implantation beam 10a.

[0084] In this preferred embodiment, the active electron guns are arranged on both sides of the ion implantation beam 10a. The two active electron guns inject electrons into the ion implantation beam 10a from both sides, which greatly improves the uniformity of ion neutralization of the ion implantation beam 10a by the active electron guns, and also improves the charge uniformity of the irradiation area of ​​the ion implantation beam 10a, thereby improving the ion implantation quality.

[0085] Furthermore, the opening on the open electrode plate 52 is the emission port of the active electron gun;

[0086] The difference between the length of the opening on the opening electrode plate 52 in the axial direction of the ion implantation beam 10a and the diameter of the wafer to be processed 01 is within a first preset range;

[0087] The first preset range is 5 mm to 10 mm.

[0088] In this preferred embodiment, the opening on the opening electrode plate 52 is equal to the emission port of the active electron gun, and the length of the opening on the opening electrode plate 52 in the axial direction of the ion implantation beam 10a is limited. The diameter of the wafer 01 to be processed is used as a reference, and the length of the opening on the opening electrode plate 52 in the axial direction of the ion implantation beam 10a is limited to 5 to 10 mm larger than the diameter of the wafer 01 to be processed. This is a structure that has been subjected to a large number of theoretical calculations and actual tests, and can ensure that the coverage of the electrons on the ion implantation beam 10a after being emitted from the active electron gun is large enough, thereby ensuring the uniformity of electron neutralization. As a specific embodiment, the length of the opening on the opening electrode plate 52 in the axial direction of the ion implantation beam 10a can range from 310 mm to 320 mm, including endpoint values, such as any one of 310.0 mm, 315.4 mm or 320.0 mm. Of course, it can also be adjusted accordingly according to actual conditions, and the present invention is not limited here.

[0089] In this specific embodiment, the emission port of the active electron gun is oriented toward the side of the ion implantation beam 10a, which means that the emission port of the active electron gun is perpendicular to the axial direction of the ion implantation beam 10a. Furthermore, the ion implantation beam is a one-dimensional linear ion beam; the emission port of the active electron gun is oriented perpendicular to the linear cross-section of the one-dimensional linear ion beam.

[0090] You can refer to Figure 4 , Figure 4 In the embodiment, the ion implantation beam is the one-dimensional linear ion beam, and the extension direction of its cross section is perpendicular to the paper surface. It is not difficult to see that in this preferred embodiment, the emission port of the active electron gun is perpendicular to the linear cross section of the one-dimensional linear ion beam, and the electrons emitted by the active electron gun have a larger contact area with the one-dimensional linear ion beam, which can obtain a better neutralization effect and improve the uniformity of ion implantation. Figure 5 , Figure 5 for Figure 4 A partial bottom view of Figure 5 In the figure, the one-dimensional linear ion beam emitted by the ion emission source 10 is ejected outward perpendicularly to the paper surface, which is represented by a dotted line.

[0091] The present invention also provides a novel control method for an ion implanter, a flow chart of a specific implementation method thereof is shown as follows: Figure 6 As shown, it is called specific implementation mode three, the control method of the novel ion implanter is used for any of the novel ion implanters described above, including:

[0092] S101 : Acquire charge amount information of the ion implantation beam 10 a from at least one of the first charge detector 22 , the second charge detector 32 , and the third charge detector 41 .

[0093] Of course, the first charge detector 22 and the third charge detector 41 are the charge quantity information of the ion implantation beam 10a obtained during the ion implantation process, and the second charge detector 32 is installed in the beam profiler 30, and the beam profiler 30 only enters the ion implantation beam 10a during the beam adjustment stage. Therefore, the second charge detector 32 is the charge quantity information of the ion implantation beam 10a obtained during the beam adjustment process.

[0094] S102: Send the ion beam charge quantity information to the controller 54, so that the controller 54 determines voltage adjustment information according to the ion beam charge quantity information.

[0095] It is known that the open electrode plate 52 is positively charged to attract electrons, so when the voltage increases, the amount of electrons provided by the active electron gun to the ion implantation beam 10a will increase, and when the voltage decreases, the amount of electrons provided by the active electron gun to the ion implantation beam 10a will decrease.

[0096] S103: Sending the voltage adjustment information to the pressurizing power source 53, so that the pressurizing power source 53 adjusts the voltage applied to the open electrode plate 52 according to the voltage adjustment information.

[0097] When the ion beam charge amount information reflects that the charge amount is too large at this time, the voltage adjustment information is used to increase the voltage applied by the pressurized power supply 53 to the open electrode plate 52 to increase the neutralization force of the electrons on the ion injection beam 10a; and when the ion beam charge amount information reflects that the charge amount is too small at this time, the voltage adjustment information is used to reduce the voltage applied by the pressurized power supply 53 to the open electrode plate 52 to reduce the neutralization force of the electrons on the ion injection beam 10a.

[0098] The control method of the novel ion implanter provided in this specific embodiment corresponds to the novel ion implanter including the active electron gun mentioned above. After obtaining the charge amount information of the ion implantation beam 10a from at least one of the first charge detector 22, the second charge detector 32 and the third charge detector 41, the information is fed back to the active electron gun, and the amount of electrons injected into the ion implantation beam 10a is adjusted by the active electron gun to ensure the charge uniformity and stability of the ion implantation process, avoid charge accumulation, and ensure a good ion implantation effect. In addition, the parameters of the active electron gun can also be adjusted manually by engineers to adjust the strength of the electron neutralization effect of the ion implantation beam 10a according to actual conditions and special process requirements.

[0099] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0100] It should be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0101] The above is a detailed introduction to the novel ion implanter and control method provided by the present invention. This article uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method and core ideas of the present invention. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present invention, the present invention can also be improved and modified, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A new type of ion implanter, characterized in that: Including ion emission source and robotic arm; The ion emission source is used to emit an ion implantation beam; The mechanical arm comprises an electrostatic clamp and a first charge detector; the electrostatic clamp and the first charge detector are arranged on a surface of the mechanical arm facing the ion emission source; The electrostatic clamp is used to fix the wafer to be processed; The first charge detector and the wafer to be processed pass through the irradiation area of ​​the ion implantation beam as the robot moves, and the first charge detector is not blocked by the wafer to be processed and the electrostatic clamp.

2. The novel ion implanter as claimed in claim 1, characterized in that: The mechanical arm is provided with a plurality of the first charge detectors; A plurality of said first charge detectors enclose a detection area; The detection area overlaps with a setting area of ​​the wafer to be processed.

3. The novel ion implanter as claimed in claim 1, characterized in that: The novel ion implanter includes a beam profiler; The beam profiler includes a Faraday cup and a second charge detector; The second charge detector and the Faraday cup are arranged on a surface of the beam profiler facing the ion emission source, and the second charge detector and the Faraday cup are located in an irradiation area of ​​the ion implantation beam.

4. The novel ion implanter as claimed in claim 3, characterized in that: The distance between the second charge detector and the Faraday cup in a direction perpendicular to the ion implantation beam ranges from 3 mm to 7 mm, both inclusive.

5. The novel ion implanter as claimed in claim 1, characterized in that: comprising a process chamber, wherein the robot arm is arranged in the process chamber; Also included is a third charge detector; The third charge detector is disposed on the inner wall of the process chamber and is located in an irradiation area of ​​the ion implantation beam.

6. The novel ion implanter according to any one of claims 1 to 5, characterized in that: Also included is an active electron gun; The active electron gun is located between the ion emission source and the mechanical arm, and the emission port of the active electron gun faces the side of the ion implantation beam; The active electron gun includes a filament, an open electrode plate, a pressurized power supply and a controller; The filament is used to generate electrons; The open electrode plate is arranged at the emission port of the electron gun and connected to the positive electrode of the pressurized power supply, so that the electrons generated by the filament move toward the open electrode plate; The controller is used to adjust the voltage applied by the pressurized power source to the open electrode plate.

7. The novel ion implanter as claimed in claim 6, characterized in that: The active electron gun further includes a graphite liner, and the graphite liner is grounded.

8. The novel ion implanter as claimed in claim 6, characterized in that: The novel ion implanter comprises two active electron guns; The two active electron guns are arranged opposite to each other on both sides of the ion implantation beam.

9. The novel ion implanter as claimed in claim 6, characterized in that: The ion implantation beam is a one-dimensional linear ion beam; The emission port of the active electron gun is oriented perpendicular to the linear cross section of the one-dimensional linear ion beam.

10. A novel control method for an ion implanter, characterized in that: The control method of the novel ion implanter is used for the novel ion implanter according to any one of claims 6 to 9, comprising: acquiring ion implantation beam charge quantity information from at least one of the first charge detector, the second charge detector, and the third charge detector; Sending the ion beam charge amount information to the controller, so that the controller determines voltage adjustment information according to the ion beam charge amount information; The voltage adjustment information is sent to the pressure power source, so that the pressure power source adjusts the voltage applied to the open electrode plate according to the voltage adjustment information.

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