Control Method, Device, Computer Equipment and System of Wafer Etching System

Abstract

The present disclosure relates to the field of integrated circuit technologies, and particularly to a control method, device, computer device, and system for a wafer etching system. The control method for the wafer etching system includes: obtaining the correspondence between the chuck temperature and the critical dimension of the wafer, and the temperature adjustment range of the chuck temperature during the etching process; obtaining the actual critical dimension after etching of the wafers in the previous batch and the corresponding target critical dimension, where the wafers in the previous batch are the wafers processed before the target batch; obtaining the critical dimension fluctuation value according to the correspondence and the temperature adjustment range; calculating the critical dimension difference between the actual critical dimension value and the target critical dimension value; and determining the wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value. By obtaining the actual critical dimension after etching of the wafers in the previous batch, the chuck temperature during the etching process, and the target critical dimension, it is thus determined whether the wafers of the target batch are operating normally.

Description

Technical Field

[0001] The present disclosure relates to the field of integrated circuit technology, and particularly to a control method, apparatus, computer device, and system for a wafer etching system. Background Art

[0002] In the etching process of wafers, it is very important to control the critical dimensions of the wafers. The critical dimensions usually refer to the width or pitch of the smallest feature structures on the wafers, and these dimensions have gradually shrunk to the nanometer level. The critical dimensions of the wafers determine the performance, power consumption, reliability, and yield of the final chips. Currently, during the etching process, due to differences in material properties, the complexity of physical and chemical reactions during the etching process, and limitations in equipment accuracy, the critical dimensions of the wafers often fluctuate. Therefore, how to obtain accurate critical dimensions has become an urgent problem to be solved. Summary of the Invention

[0003] Based on this, it is necessary to provide a control method, apparatus, computer device, and system for a wafer etching system to address the problem of obtaining accurate critical dimensions in the prior art.

[0004] To achieve the above object, in a first aspect, the present application provides a control method for a wafer etching system, including:

[0005] Obtain the correspondence between the chuck temperature and the critical dimensions of the wafer and the temperature adjustment range of the chuck temperature during the etching process;

[0006] Obtain the actual critical dimensions after etching of the wafers in the previous batch and their corresponding target critical dimensions, where the wafers in the previous batch are the wafers processed before the target batch;

[0007] According to the correspondence and the temperature adjustment range, obtain the critical dimension fluctuation value;

[0008] Calculate the critical dimension difference between the actual critical dimension value and the target critical dimension value;

[0009] Based on the critical dimension difference and the critical dimension fluctuation value, determine the wafer operation process for the target batch.

[0010] In one embodiment, the step of determining the wafer operation process for the target batch based on the critical dimension difference and the critical dimension fluctuation value includes:

[0011] When the critical dimension difference is greater than the critical dimension fluctuation value, lock the wafer etching system.

[0012] In one embodiment, after locking the wafer etching system when the critical dimension difference is greater than the critical dimension fluctuation value, it includes:

[0013] Adjust the temperature control unit of the chuck based on the key dimension difference.

[0014] In one embodiment, the step of determining the wafer operation process of the target lot based on the key dimension difference and the key dimension fluctuation value includes:

[0015] When the key dimension difference is less than or equal to the key dimension fluctuation value, perform operations on the wafers of the target lot.

[0016] In one embodiment, the chuck has multiple regions.

[0017] The step of obtaining the correspondence between the chuck temperature and the key dimension of the wafer includes:

[0018] Obtain the correspondence for each region.

[0019] The step of obtaining the key dimension fluctuation value according to the correspondence and the temperature adjustment range includes:

[0020] Determine the target region of the actual key dimension value on the wafer.

[0021] According to the correspondence of the target region and the temperature adjustment range, obtain the key dimension fluctuation value of the target region.

[0022] In one embodiment, the temperature adjustment range includes a temperature upper limit value and a temperature lower limit value.

[0023] The step of obtaining the correspondence between the chuck temperature and the key dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process includes:

[0024] Based on the correspondence and the temperature upper limit value, calculate the key dimension upper limit value.

[0025] Based on the correspondence and the temperature lower limit value, calculate the key dimension lower limit value.

[0026] Based on the key dimension upper limit value and the key dimension lower limit value, obtain the key dimension fluctuation value.

[0027] In a second aspect, the present application provides a control device for a wafer etching system, including:

[0028] A first acquisition module, configured to acquire the correspondence between the chuck temperature and the key dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process;

[0029] A second acquisition module, configured to acquire the actual critical dimension after etching of wafers in a previous batch and the corresponding target critical dimension, where the wafers in the previous batch are wafers processed before the target batch;

[0030] A third acquisition module, configured to acquire a critical dimension fluctuation value according to the corresponding relationship and the temperature adjustment range;

[0031] A calculation module, configured to calculate a critical dimension difference between the actual critical dimension value and the target critical dimension value;

[0032] A determination module, configured to determine the wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value.

[0033] In a third aspect, the present application further provides a computer device, including a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:

[0034] Acquire the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process;

[0035] Acquire the actual critical dimension after etching of wafers in a previous batch and the corresponding target critical dimension, where the wafers in the previous batch are wafers processed before the target batch;

[0036] Acquire a critical dimension fluctuation value according to the corresponding relationship and the temperature adjustment range;

[0037] Calculate a critical dimension difference between the actual critical dimension value and the target critical dimension value;

[0038] Determine the wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value.

[0039] In a fourth aspect, the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented:

[0040] Acquire the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process;

[0041] Acquire the actual critical dimension after etching of wafers in a previous batch and the corresponding target critical dimension, where the wafers in the previous batch are wafers processed before the target batch;

[0042] Acquire a critical dimension fluctuation value according to the corresponding relationship and the temperature adjustment range;

[0043] Calculate a critical dimension difference between the actual critical dimension value and the target critical dimension value;

[0044] Determine the wafer operation process of the target batch based on the key dimension difference and the key dimension fluctuation value.

[0045] In a fifth aspect, the present application further provides a wafer etching system, including:

[0046] A chuck for placing a wafer;

[0047] A control device connected to the chuck and executing the control method of the wafer etching system provided in any of the foregoing embodiments.

[0048] The control method, device, computer device, and system of the wafer etching system in this specification have the following unexpected beneficial effects: First, by obtaining the actual key dimensions after etching of the wafers in the previous batch, the chuck temperature during the etching process, and the target key dimensions, the present application can quickly determine whether the wafers of the target batch (the subsequent batch) are operating normally. When it is determined that the wafers of the target batch can operate normally, the present application can improve the accuracy of the key dimensions of the wafers of the target batch. Or, when it is determined that the wafers of the target batch cannot operate normally, the present application can prevent the wafers of the target batch from being shipped in a timely manner. Second, in some embodiments of the present application, multiple regions can be divided on the chuck, so as to accurately determine whether each region of the chuck is suitable for continued operation. When some regions of the chuck are not suitable for continued operation, the chuck regions that need to be adjusted can also be quickly and accurately determined. Description of the Drawings

[0049] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0050] Figure 1 It is a flowchart of the control method of the wafer etching system provided in an embodiment;

[0051] Figure 2 It is a flowchart of the control method of the wafer etching system provided in another embodiment;

[0052] Figure 3 It is a schematic diagram of a chuck provided in an embodiment;

[0053] Figure 4 It is a schematic diagram of the corresponding relationship provided in an embodiment;

[0054] Figure 5Schematic diagram of a control device for a wafer etching system provided in an embodiment.

[0055] Explanation of reference numerals: Chuck - 100; Innermost circle - 110; Outermost circle - 120.

[0056] To better describe and illustrate the embodiments and / or examples of the inventions disclosed herein, reference may be made to one or more of the accompanying drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed inventions, the presently described embodiments and / or examples, and the presently understood best mode of these inventions. Detailed implementation manners

[0057] To facilitate understanding of the present disclosure, the present disclosure will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided so that the disclosure of the present disclosure is more thorough and comprehensive.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this disclosure belongs. The terms used in the specification of the present disclosure herein are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0059] In each embodiment, unless otherwise clearly specified and limited, the terms "mounted", "connected", "coupled", "fixed", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in each embodiment can be understood according to specific circumstances.

[0060] Spatial relationship terms such as "under", "below", "lower", "beneath", "above", "upper", etc. can be used herein to describe the relationship of one element or feature shown in the figure with other elements or features. It should be understood that, in addition to the orientations shown in the figure, spatial relationship terms also include different orientations of the device during use and operation. For example, if the device in the attached drawing is flipped, an element or feature described as "under other elements" or "beneath it" or "under it" will be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "beneath" can include both upper and lower orientations. In addition, the device may also include additional orientations (such as rotating 90 degrees or other orientations), and the spatial descriptors used herein are accordingly interpreted.

[0061] As used herein, the singular forms "a", "an", and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that when the terms "comprising" and / or "including" are used in this specification, the presence of the described features, integers, steps, operations, elements, and / or components can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups is not excluded. Also, as used herein, the term "and / or" includes any and all combinations of the related listed items.

[0062] This embodiment provides a wafer etching system. Please refer to Figure 1 and Figure 2 , the control method of the wafer etching system can be applied to the wafer etching system. Please refer to Figure 3 , the wafer etching system may at least include a chuck 100 and a control device. The control device of the wafer etching system may include an Advanced Process Control (APC), etc. The chuck 100 of the wafer etching system may be located in the process chamber. The chuck 100 can be used to hold the wafer. As an example, the process chamber can perform plasma etching on the chuck 100. The chuck 100 may have a temperature control unit, which can heat the chuck 100, thereby increasing or decreasing the temperature of the wafer. As an example, the chuck 100 may include an Electrostatic Chucks (ESC), etc. Further, the temperature control unit can also monitor the temperature of the chuck 100 in real time, and when the temperature of the chuck 100 is abnormal, an alarm and self - protection mechanism (such as locking the wafer etching system, etc.) can be activated.

[0063] The etching process of the wafer can include multiple steps, and the temperature of the chuck 100 can be different for each step. Specifically, the control device of the wafer etching system can be provided with a master-slave regulation step. The master regulation step (Process) can be the temperature required for the wafer in a certain etching process step. The slave regulation step (Stable) can be the specific set temperature of the chuck in this etching process step. The temperature adjustment range of the slave regulation step and the master regulation step can be kept consistent. Of course, the temperature adjustment ranges of the slave regulation step and the master regulation step can also be inconsistent. In different steps, the temperature of the chuck 100 can be different. For example, in the first process step, the temperature of the chuck 100 is set to 50 °C. At this time, the temperature of the chuck 100 needs to be raised from 0 °C to 50 °C. In the second process step, the temperature of the chuck 100 is set to 60 °C. At this time, the temperature of the chuck 100 needs to be raised from 50 °C to 60 °C. The above data is only for illustrative purposes. In actual embodiments, the temperature of the chuck 100 and the change amount are not limited to the above data. Parameters such as the temperature adjustment amount, single adjustment value, and the specification of the temperature difference between the master-slave regulation steps of each master-slave regulation step can be preset in the control device of the wafer etching system.

[0064] Please refer to Figure 1 and Figure 2 , this embodiment also provides a control method for a wafer etching system, and this method can be applied to a wafer etching system. For example, the control device of the wafer etching system can execute the control method of the wafer etching system in this embodiment. The control method of the wafer etching system includes the following steps:

[0065] Step S100: Obtain the correspondence between the temperature of the chuck 100 and the critical dimension of the wafer, and the temperature adjustment range of the temperature of the chuck 100 during the etching process.

[0066] Step S200: Obtain the actual critical dimension after etching the wafers in the previous batch and its corresponding target critical dimension. The wafers in the previous batch are the wafers processed before the target batch.

[0067] Step S300: Obtain the critical dimension fluctuation value according to the correspondence and the temperature adjustment range.

[0068] Step S400: Calculate the critical dimension difference between the actual critical dimension value and the target critical dimension value.

[0069] Step S500: Determine the wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value.

[0070] In step S100, after the previous batch of wafers undergoes an etching operation, the wafer surface may have grooves. The critical dimension of the wafer can be, for example, the width of the wafer grooves. There is a corresponding relationship between the temperature of the chuck 100 and the critical dimension of the wafer. This corresponding relationship can be pre-stored in the control device of the wafer etching system. As an example, please refer to Figure 4 , there may be a linear relationship between the temperature of the chuck 100 and the critical dimension of the wafer. Specifically, the linear relationship can be CD = 0.4032T + 29.134, where CD is the critical dimension of the wafer and T is the temperature of the chuck 100. It can be understood that the above linear relationship is only for illustrative purposes.

[0071] The wafer has an actual critical dimension after etching and a corresponding target critical dimension. The target critical dimension is the critical dimension that needs to be obtained, and the actual critical dimension is the measured critical dimension. The actual critical dimension may be the same as the target critical dimension, or there may be a difference between the actual critical dimension and the target critical dimension.

[0072] The temperature adjustment range of the chuck 100 temperature can be the reasonable fluctuation range of the chuck 100 temperature. As an example, the required temperature of the chuck 100 can be 50°C, and the temperature adjustment range of the chuck 100 temperature can be 49°C - 51°C. Of course, the temperature adjustment range of the chuck 100 temperature can also be 49.5°C - 50.5°C. This embodiment does not specifically limit the temperature adjustment range. For example, the required temperature of the chuck 100 can be 50°C, and the temperature adjustment range of the chuck 100 temperature can be 48°C - 55°C, etc.

[0073] In step S200, the wafer etching system can etch multiple batches of wafers. The wafers to be etched in the next batch can be the wafers of the target batch, and the wafers in the previous batch are the wafers processed in the batch before the target batch. It can be understood that the wafers in the previous batch are the wafers that have completed the etching process, and the wafers of the target batch are the wafers that have not undergone the etching process.

[0074] Measure the actual critical dimension of the wafers in the previous batch. This embodiment does not limit the specific method for obtaining the actual critical dimension, nor does it limit the specific position of the actual critical dimension on the wafer. Correspondingly, while measuring the actual critical dimension of the wafers in the previous batch, the temperature of the chuck 100 during the etching process can also be obtained. As an example, the temperature of the chuck 100 can be the set temperature of the chuck 100.

[0075] In step S300, substituting the temperature adjustment range into the corresponding relationship can obtain the critical dimension fluctuation value. The critical dimension fluctuation value can be the reasonable fluctuation range value of the critical dimension of the wafer under the temperature adjustment range of the chuck 100. As an example, the required temperature of the chuck 100 can be 50 °C, and the temperature adjustment range of the chuck 100 can be 49 °C - 51 °C. Then, the upper temperature limit value can be 51 °C, and the lower temperature limit value can be 49 °C. It can be understood that at this time, the temperature (△t) that the chuck 100 temperature can float can be 1 °C. In the case where the corresponding relationship is a linear relationship, the product result of △t and the slope (k) of the linear relationship can be calculated, and this product result can be the critical dimension fluctuation value.

[0076] In step S400, the critical dimension difference between the actual critical dimension value and the target critical dimension value can be calculated.

[0077] In step S500, based on the critical dimension difference and the critical dimension fluctuation value, the wafer operation process of the target batch can be determined. In one possible example, when the critical dimension difference is less than or equal to the critical dimension fluctuation value, the wafers of the target batch are processed. In another possible example, when the critical dimension difference is greater than the critical dimension fluctuation value, the wafer etching system can be locked, and the wafers of the target batch (the next batch) can be prevented from being unloaded. After that, based on the critical dimension difference, the temperature control unit of the chuck 100 can be adjusted. For example, by adjusting the set temperature of this etching process in the control device of the wafer etching system, the temperature control unit of the chuck 100 can be adjusted, so that the temperature control unit of the chuck 100 heats up or cools down in this etching process. Or, it can also be confirmed whether other devices such as the temperature control unit of the chuck 100 and the machine tool are abnormal. After confirming that the temperature control unit of the chuck 100 or other devices are correct, then control the unloading of the wafers of the target batch.

[0078] In this embodiment, by obtaining the actual critical dimension after etching of the wafers in the previous batch, the temperature of the chuck 100 during the etching process, and the target critical dimension, it is possible to determine whether the wafers of the target batch (the next batch) are processed normally, thereby improving the accuracy of the critical dimension of the wafers of the target batch.

[0079] In one embodiment, the chuck 100 has multiple regions. As an example, the multiple regions of the chuck 100 can be distributed in concentric circles, or the multiple regions of the chuck 100 can be distributed in a matrix. Correspondingly, step S100 includes:

[0080] Step S110: Obtain the corresponding relationship of each region.

[0081] Step S300 includes:

[0082] Step S330: Determine the target area on the wafer for the actual critical dimension value.

[0083] Step S340: Obtain the critical dimension fluctuation value of the target area according to the corresponding relationship of the target area and the temperature of the chuck 100.

[0084] In step S110, each area can have a corresponding relationship. Each corresponding relationship can be obtained through experiments in advance.

[0085] In steps S330 to S340, the coordinates of the actual critical dimension value on the wafer can be obtained first, and then the target area of the actual critical dimension value on the wafer can be obtained through the coordinates. As an example, the actual critical dimension value can be in the innermost circle 110 or the outermost circle 120 of the wafer. Then, according to the corresponding relationship of the target area and the temperature of the chuck 100, the critical dimension fluctuation value of the target area is obtained. It can be understood that the chuck 100 has multiple areas. In this embodiment, the actual critical dimension value in each area can be obtained, and it is determined whether the actual critical dimension value in each area meets the critical dimension fluctuation value, and finally it is judged whether the entire chuck 100 is suitable for continuing the operation.

[0086] In this embodiment, by dividing the chuck 100 into multiple areas, it is accurately determined whether each area of the chuck 100 is suitable for continuing the operation. In the case where some areas of the chuck 100 are not suitable for continuing the operation, the area of the chuck 100 that needs to be adjusted can also be quickly and accurately determined.

[0087] In one embodiment, the temperature adjustment range includes a temperature upper limit value and a temperature lower limit value.

[0088] Correspondingly, step S300 includes:

[0089] Step S310: Calculate the critical dimension upper limit value based on the corresponding relationship and the temperature upper limit value.

[0090] Step S320: Calculate the critical dimension lower limit value based on the corresponding relationship and the temperature lower limit value.

[0091] Step S330: Obtain the critical dimension fluctuation value based on the critical dimension upper limit value and the critical dimension lower limit value.

[0092] In steps S310 to S330, as an example, the required temperature of the chuck 100 can be 50°C, the temperature adjustment range of the chuck 100 temperature can be 49°C - 51°C, then the upper temperature limit value can be 51°C, and the lower temperature limit value can be 49°C. In the case where the corresponding relationship is a non-linear relationship, 49°C, 50°C, and 51°C can be respectively substituted into the corresponding relationship to obtain the first result, the second result, and the third result. The first result can be the lower limit value of the critical dimension, and the third result can be the upper limit value of the critical dimension. Then, the difference between the first result and the second result, and the difference between the third result and the second result can be used as the critical dimension fluctuation value.

[0093] In this embodiment, by setting the temperature adjustment range of the chuck 100 temperature, a reasonable fluctuation range of the critical dimension of the wafer is provided. The critical dimension of the wafer within this reasonable fluctuation range can be considered to meet the process requirements. Moreover, this embodiment does not limit the specific form of the corresponding relationship. In the case where the corresponding relationship is a linear relationship or a non-linear relationship, this embodiment can calculate and obtain the critical dimension fluctuation value.

[0094] It should be understood that although Figure 1 and Figure 2 the steps in the flowchart of Figure 1 and Figure 2 are shown in sequence according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless there is a clear description in this article, the execution of these steps has no strict order limit, and these steps can be executed in other orders. Moreover,

[0095] Based on the same inventive concept, the embodiment of the present application also provides a control device for a wafer etching system for implementing the control method of the wafer etching system involved above. The implementation solution provided by this device to solve the problem is similar to the implementation solution recorded in the above method. Therefore, the specific limitations in one or more embodiments of the control device for the wafer etching system provided below can refer to the limitations on the control method of the wafer etching system in the above text, and will not be repeated here.

[0096] In an exemplary embodiment, as Figure 5 shown, a control device for a wafer etching system is provided, including: a first acquisition module, a second acquisition module, a third acquisition module, a calculation module, and a determination module, where:

[0097] The first acquisition module is configured to acquire the correspondence between the temperature of the chuck 100 and the critical dimension of the wafer, and the temperature adjustment range of the chuck 100 temperature during the etching process.

[0098] The second acquisition module is configured to acquire the actual critical dimension after etching of the wafers in the previous batch and the corresponding target critical dimension, where the wafers in the previous batch are the wafers processed before the target batch.

[0099] The third acquisition module is configured to acquire the critical dimension fluctuation value according to the correspondence and the temperature adjustment range.

[0100] The calculation module is configured to calculate the critical dimension difference between the actual critical dimension value and the target critical dimension value.

[0101] The determination module is configured to determine the wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value.

[0102] In one embodiment, the determination module is further configured to lock the wafer etching system when the critical dimension difference is greater than the critical dimension fluctuation value.

[0103] In one embodiment, the determination module is further configured to adjust the temperature control unit of the chuck 100 based on the critical dimension difference.

[0104] In one embodiment, the determination module is further configured to perform operations on the wafers of the target batch when the critical dimension difference is less than or equal to the critical dimension fluctuation value.

[0105] In one embodiment, the chuck 100 has multiple regions, and the first acquisition module is further configured to acquire the correspondence of each region. The third acquisition module is further configured to determine the target region of the actual critical dimension value on the wafer; and acquire the critical dimension fluctuation value of the target region according to the correspondence of the target region and the temperature adjustment range.

[0106] In one embodiment, the temperature adjustment range includes a temperature upper limit value and a temperature lower limit value. The third acquisition module is further configured to calculate the critical dimension upper limit value based on the correspondence and the temperature upper limit value; calculate the critical dimension lower limit value based on the correspondence and the temperature lower limit value; and acquire the critical dimension fluctuation value based on the critical dimension upper limit value and the critical dimension lower limit value.

[0107] Each module in the control device of the above-mentioned wafer etching system can be implemented in whole or in part by software, hardware, and their combination. The above-mentioned modules can be embedded in the processor in the computer device in hardware form or be independent of it, or can be stored in the memory in the computer device in software form, so that the processor can call and execute the operations corresponding to the above-mentioned modules.

[0108] In an exemplary embodiment, a computer device is provided, and the computer device may be a server. The computer device includes a processor, a memory, an input / output interface (Input / Output, abbreviated as I / O), and a communication interface. Among them, the processor, the memory, and the input / output interface are connected through a system bus, and the communication interface is connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store control data of a wafer etching system. The input / output interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with an external terminal through a network connection. The computer program, when executed by the processor, implements a control method for a wafer etching system.

[0109] In an exemplary embodiment, a computer device is provided, including a memory and a processor. A computer program is stored in the memory, and when the processor executes the computer program, the steps provided in one or more of the above embodiments are implemented.

[0110] In an embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps provided in one or more of the above embodiments are implemented.

[0111] In an embodiment, a computer program product is provided, including a computer program. When the computer program is executed by a processor, the steps provided in one or more of the above embodiments are implemented.

[0112] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided in this application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The processors involved in the embodiments provided in this application can be general-purpose processors, central processors, graphics processors, digital signal processors, programmable logic devices, data processing logics based on quantum computing, artificial intelligence (AI) processors, etc., without limitation.

[0113] In the description of this specification, the descriptions referring to terms such as "some embodiments", "other embodiments", "ideal embodiments", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. In addition, these specific features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that the "present embodiment" or "an embodiment" mentioned throughout the specification means that the specific features, structures, or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, the appearances of "in one embodiment" or "in an embodiment" throughout the specification do not necessarily refer to the same embodiment.

[0114] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features of the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.

[0115] The above-described embodiments merely represent several implementation manners of the present application. The descriptions thereof are relatively specific and detailed, but should not be construed as a limitation to the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims. The above is only the preferred implementation manner of the present disclosure, and does not limit the patent scope of the present disclosure. Any equivalent structural transformation made by using the content of the specification and drawings of the present disclosure under the inventive concept of the present disclosure, or any direct / indirect application in other related technical fields is included in the patent protection scope of the present disclosure.

Claims

1. A control method for a wafer etching system, characterized in that: include: Obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process; Obtaining actual critical dimensions of a previous batch of wafers after etching and their corresponding target critical dimensions, wherein the previous batch of wafers is wafers processed before the target batch; According to the corresponding relationship and the temperature adjustment amplitude, a critical dimension fluctuation value is obtained; Calculating a critical dimension difference between the actual critical dimension value and the target critical dimension value; Determining a wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value; The temperature adjustment range includes an upper temperature limit and a lower temperature limit. The step of obtaining the key dimension fluctuation value according to the corresponding relationship and the temperature adjustment range includes: Based on the corresponding relationship and the upper temperature limit, calculating the upper limit of the critical dimension; Calculating a lower limit value of a critical dimension based on the corresponding relationship and the lower limit value of the temperature; Calculating a critical dimension setting value based on the corresponding relationship and the set temperature of the chuck; Based on the upper limit value of the critical dimension and the lower limit value of the critical dimension, a critical dimension fluctuation value is obtained, wherein the critical dimension fluctuation value is a difference between the upper limit value of the critical dimension and the set value of the critical dimension, and the critical dimension fluctuation value is a difference between the lower limit value of the critical dimension and the set value of the critical dimension; The chuck has multiple areas, and the step of obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer includes: Obtaining the corresponding relationship of each area; The step of obtaining the key dimension fluctuation value according to the corresponding relationship and the temperature adjustment amplitude includes: Determine a target area of ​​the actual critical dimension value on the wafer; The critical dimension fluctuation value of the target area is acquired according to the corresponding relationship of the target area and the temperature adjustment amplitude.

2. The control method of the wafer etching system according to claim 1, characterized in that: The step of determining the wafer operation flow of the target batch based on the critical dimension difference and the critical dimension fluctuation value comprises: When the critical dimension difference is greater than the critical dimension fluctuation value, the wafer etching system is locked.

3. The control method of the wafer etching system according to claim 2, characterized in that: When the critical dimension difference is greater than the critical dimension fluctuation value, after locking the wafer etching system, the method includes: Based on the critical dimension difference, a temperature control unit of the chuck is adjusted.

4. The control method of the wafer etching system according to claim 1, characterized in that: The step of determining the wafer operation flow of the target batch based on the critical dimension difference and the critical dimension fluctuation value comprises: When the critical dimension difference is less than or equal to the critical dimension fluctuation value, the operation is performed on the wafers of the target batch.

5. The control method of the wafer etching system according to claim 1, characterized in that: The multiple areas of the chuck are distributed in concentric circles.

6. The control method of the wafer etching system according to claim 1, characterized in that: In the case where the corresponding relationship is a linear relationship, the step of obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment amplitude of the chuck temperature during the etching process includes: The product of the temperature adjustment amplitude and the slope of the linear relationship is calculated, and the critical dimension fluctuation value is determined based on the product.

7. A control device for a wafer etching system, characterized in that: include: A first acquisition module is used to acquire the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process; A second acquisition module is used to acquire the actual critical dimensions of the previous batch of wafers after etching and the corresponding target critical dimensions thereof, wherein the previous batch of wafers is wafers processed before the target batch; A third acquisition module, used for acquiring a key dimension fluctuation value according to the corresponding relationship and the temperature adjustment amplitude; A calculation module, used for calculating a critical dimension difference between the actual critical dimension value and the target critical dimension value; A determination module, configured to determine a wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value; The temperature adjustment range includes an upper temperature limit and a lower temperature limit, and the third acquisition module is further used to calculate an upper temperature limit of a critical dimension based on the corresponding relationship and the upper temperature limit; calculate a lower temperature limit of a critical dimension based on the corresponding relationship and the lower temperature limit; calculate a set value of a critical dimension based on the corresponding relationship and the set temperature of the chuck; obtain a critical dimension fluctuation value based on the upper temperature limit and the lower temperature limit, the critical dimension fluctuation value being the difference between the upper temperature limit and the set value of the critical dimension, and the critical dimension fluctuation value being the difference between the lower temperature limit and the set value of the critical dimension; The first acquisition module is also used to acquire the correspondence of each area, and the third acquisition module is also used to determine the target area of ​​the actual critical dimension value on the wafer; according to the correspondence of the target area and the temperature adjustment amplitude, the critical dimension fluctuation value of the target area is acquired.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A wafer etching system, characterized in that: include: A chuck for placing the wafer; A control device is connected to the chuck and executes the control method of the wafer etching system as described in any one of claims 1-6.

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