Processing apparatus and processing method of semiconductor workpiece

Abstract

The invention provides a processing apparatus and a processing method of a semiconductor workpiece. The processing equipment comprises a reaction cavity used for containing a workpiece to be processed; the inner cavity enclosure is located in the reaction cavity and comprises a first enclosure part and two enclosure walls extending from the first enclosure part, a gas outlet is formed between the two enclosure walls, and the two enclosure walls at least partially surround the supporting mechanism and are attached to the edge of the supporting mechanism; wherein the inner chamber enclosure, the support mechanism, and the inner wall of the reaction chamber define a processing space. The inner chamber is arranged to surround the reaction cavity to form the treatment space with the small volume, on one hand, the first process gas enters the treatment space with the small volume to participate in treatment, the gas utilization rate is increased, on the other hand, a stable gas flow field can be formed in the reaction cavity, the stability of the treatment effect is improved, and the product quality is improved. And on the other hand, the thermal field around the workpiece can be improved, and the process environment where the workpiece is located is improved.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure generally relate to the field of semiconductor manufacturing, and more particularly, to a processing device and a method for processing a semiconductor workpiece. Background Art

[0002] In wafer processing, such as heat treatment, the gas discharged to the wafer will diffuse freely, resulting in low gas utilization and failure to form a stable gas flow field, which will affect the formation of wafer oxide film and the processing quality of the wafer surface. Summary of the invention

[0003] A first aspect of the present disclosure provides a processing device for semiconductor workpiece process processing, comprising: a reaction chamber for accommodating a workpiece to be processed; an air inlet port and an exhaust port, wherein the air inlet port is connected to a first gas source to deliver a first process gas into the reaction chamber to process the workpiece, and the exhaust port is used to discharge the first process gas out of the reaction chamber; a support mechanism, located in the reaction chamber and used to carry the workpiece; an inner chamber enclosure, located in the reaction chamber, the inner chamber enclosure comprising a first enclosure portion and two enclosure walls extending from the first enclosure portion, a gas outlet being formed between the two enclosure walls, the two enclosure walls at least partially surrounding the support mechanism and fitting to the edge of the support mechanism; wherein the inner chamber enclosure, the support mechanism and the inner wall of the reaction chamber define a processing space, and the first process gas flowing out of the air inlet port flows into the processing space and then leaves the processing space through the gas outlet of the inner chamber enclosure.

[0004] By setting an inner chamber enclosure to form a smaller processing space in the reaction chamber, on the one hand, the first process gas can enter the smaller processing space to participate in the processing, thereby improving the gas utilization rate; on the other hand, a stable gas flow field can be formed in the reaction chamber, thereby improving the stability of the processing effect; and on the other hand, the thermal field around the workpiece can be improved, thereby improving the process environment in which the workpiece is located.

[0005] In some embodiments, the first enclosure portion of the inner chamber enclosure includes a curved section that is adapted to the shape of the support structure.

[0006] In some embodiments, the interior of the first enclosure portion includes a gas channel, a first end of the gas channel is connected to the gas inlet port, and a second end of the gas channel is located in the reaction chamber; wherein the first process gas flowing out of the gas inlet port flows into the processing space through the first end of the gas channel, the gas channel, and the second end of the gas channel.

[0007] In some embodiments, the support mechanism includes: a quartz tray, the quartz tray is used to separate the processing space into a first subspace and a second subspace; the first process gas exhausted from the second end of the gas channel enters at least one of the first subspace and the second subspace.

[0008] In some embodiments, the gas channel includes a first sub-channel and a second sub-channel that are independent of each other, the first sub-channel is connected to the first sub-space, and the second sub-channel is connected to the second sub-space; wherein the first process gas entering from the gas inlet port is divided into two parts by the first enclosure part, a part of the first process gas is discharged into the first sub-space through the first sub-channel to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second sub-space through the second sub-channel.

[0009] In some embodiments, the first process gas discharged from the second end of the gas channel is divided into two parts by the support mechanism, one part of the first process gas is discharged into the first subspace to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second subspace.

[0010] In some embodiments, the second end of the gas channel is in communication with the second subspace, and the first process gas entering from the gas inlet port is discharged into the second subspace through the gas channel.

[0011] In some embodiments, the inner chamber enclosure further includes a second enclosure portion having the same configuration as the first enclosure portion, the second enclosure portion being disposed between the gas outlet and the exhaust port, and the treated first process gas is discharged from the processing space through the second enclosure portion.

[0012] In some embodiments, the processing equipment further includes a top gas inlet device, a first end of the top gas inlet device is connected to the gas inlet port, and a second end of the top gas inlet device is located in the first subspace to deliver the first process gas into the first subspace.

[0013] In some embodiments, the processing device further includes a gas diffusion plate located below the second end of the top gas inlet device, and the gas diffusion plate includes a plurality of through holes.

[0014] In some embodiments, the processing equipment also includes a side air intake device, which is connected to a second gas source to deliver a second process gas into the reaction chamber; the processing space is divided into a first subspace and a second subspace by a supporting mechanism, a first part of the second process gas flows into the first subspace to process a first processing surface of the workpiece located in the first subspace, and a second part of the second process gas flows into the second subspace.

[0015] A second aspect of the present disclosure provides a method for processing a semiconductor workpiece, comprising: allowing a first process gas to enter a reaction chamber of a processing device through an air inlet port of the processing device; guiding and enclosing the first process gas entering the reaction chamber and gathering it in a processing space of a heat treatment device for processing the semiconductor workpiece; discharging the processed first process gas from the processing space through a gas outlet of the processing device; and discharging the exhausted first process gas from the reaction chamber through an exhaust port of the processing device.

[0016] According to the processing method disclosed in the present invention, the workpiece can be placed in the processing space for processing. On the one hand, the first process gas can be prevented from diffusing into the reaction chamber, thereby improving gas utilization. On the other hand, the flow direction of the gas in the reaction chamber can be standardized to form a stable gas flow field.

[0017] In some embodiments, the first process gas entering the reaction chamber is guided and enclosed to be gathered in the processing space of the heat treatment equipment for processing the semiconductor workpiece, including: an inner chamber enclosure connected to the gas inlet port is set in the reaction chamber, the inner chamber enclosure includes a first enclosure part and two enclosure walls extending from the first enclosure part, wherein the inner chamber enclosure and the inner wall of the reaction chamber define the processing space, and the interior of the first enclosure part defines a gas channel; the first process gas entering the reaction chamber is guided to the processing space through the gas channel; the first process gas entering the processing space is enclosed and gathered in the processing space by the inner chamber enclosure and the inner wall of the reaction chamber, for processing the semiconductor workpiece.

[0018] In some embodiments, the first process gas entering the reaction chamber is guided to the processing space through the gas channel, including: setting a support mechanism in the reaction chamber, and the processing space is divided into a first subspace and a second subspace by the support mechanism; dividing the gas channel into a first subchannel and a second subchannel that are independent of each other, the first subchannel is connected to the first subspace, and the second subchannel is connected to the second subspace; so that the first process gas entering from the gas inlet port is divided into two parts by the first enclosure part, a part of the first process gas is discharged into the first subspace through the first subchannel to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second subspace through the second subchannel.

[0019] In some embodiments, the first process gas entering the reaction chamber is guided to the processing space through the gas channel, including: a support mechanism is set in the reaction chamber, and the processing space is divided into a first subspace and a second subspace by the support mechanism; so that the first process gas discharged from the gas channel is divided into two parts by the support mechanism, a part of the first process gas is discharged into the first subspace to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second subspace.

[0020] In some embodiments, the first process gas entering the reaction chamber is guided to the processing space through the gas channel, including: setting a support mechanism in the reaction chamber, and the processing space is divided into a first subspace and a second subspace by the support mechanism; configuring the gas channel to be connected to the second subspace, so that the first process gas entering from the gas inlet port is discharged into the second subspace through the gas channel.

[0021] In some embodiments, the processing method further includes: setting a top gas inlet device connected to the gas inlet port in the reaction chamber, the first end of the top gas inlet device is connected to the gas inlet port, and the second end of the top gas inlet device is located in the first subspace to guide the first process gas into the first subspace.

[0022] In some embodiments, the processing method further includes: disposing a gas diffusion plate below the second end of the top gas inlet device, the gas diffusion plate including a plurality of through holes for adjusting the distribution of the first process gas in the first subspace.

[0023] In some embodiments, the gas outlet is defined by the distance between two enclosure walls.

[0024] In some embodiments, the first process gas after treatment is discharged from the processing space through the gas outlet of the processing equipment, including: setting a second enclosure part with the same configuration as the first enclosure part between the gas outlet and the exhaust port, so that the first process gas after treatment is discharged from the processing space through the second enclosure part.

[0025] It should be understood that the contents described in the summary of the invention are not intended to limit the key or important features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. In the accompanying drawings, the same or similar reference numerals represent the same or similar elements, wherein:

[0027] Figure 1 is a schematic structural diagram of an inner chamber enclosure of a processing device according to an embodiment of the present disclosure;

[0028] Figure 2 is a schematic diagram of the structure of a processing device according to an embodiment of the present disclosure;

[0029] Figure 3 is a schematic cross-sectional view of a processing device according to an embodiment of the present disclosure showing directions of an air inlet port and an exhaust port at a first angle;

[0030] Figure 4 is a schematic cross-sectional view of a processing device according to an embodiment of the present disclosure showing a direction of an air inlet port at a second angle;

[0031] Figure 5 is a schematic cross-sectional view of a processing device according to an embodiment of the present disclosure showing the direction of the exhaust port at a third angle;

[0032] Figure 6 is a schematic diagram of a method for processing a semiconductor workpiece according to an embodiment of the present disclosure.

[0033] Description of reference numerals:

[0034] 100: Processing equipment;

[0035] 101: reaction chamber;

[0036] 1011: Artifacts;

[0037] 1012: bottom plate;

[0038] 102: air intake port;

[0039] 103: Exhaust port;

[0040] 104: support mechanism;

[0041] 105: Top air intake device;

[0042] 106: gas diffusion plate;

[0043] 107: Inner chamber enclosure;

[0044] 1071: first enclosure part;

[0045] 1072: Enclosure wall;

[0046] 1073: First subspace;

[0047] 1074: Second subspace;

[0048] 1075: Gas outlet;

[0049] 108: Side air intake. DETAILED DESCRIPTION

[0050] The following is a description of exemplary embodiments of the present disclosure in conjunction with the accompanying drawings, including various details of the embodiments of the present disclosure to facilitate understanding, which should be considered as merely exemplary. Therefore, it should be recognized by those of ordinary skill in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.

[0051] like Figures 1 to 5As shown, an embodiment of the present disclosure provides a processing device 100 for processing a semiconductor workpiece 1011, comprising: a reaction chamber 101, for accommodating the workpiece 1011 to be processed; an inlet port 102 and an exhaust port 103, wherein the inlet port 102 is connected to a first gas source to deliver the first process gas into the reaction chamber 101 to process the workpiece 1011, and the exhaust port 103 is used to exhaust the first process gas from the reaction chamber 101; a support mechanism 104, located in the reaction chamber 101 and used to carry the workpiece 1011; an inner chamber enclosure 107, located in the reaction chamber 101, the inner chamber enclosure 107 includes a first enclosure portion 1071 and two enclosure walls 1072 extending from the first enclosure portion 1071, a gas outlet 1075 is formed between the two enclosure walls 1072, and the two enclosure walls 1072 at least partially surround the support mechanism 104 and fit the edge of the support mechanism 104; wherein, the inner chamber enclosure 107, the support mechanism 104 and the inner wall of the reaction chamber 101 define a processing space, and the first process gas flowing out of the gas inlet port 102 flows into the processing space, and then leaves the processing space through the gas outlet 1075 of the inner chamber enclosure 107.

[0052] The processing device 100 is a device for processing a workpiece 1011 (such as a wafer) during the semiconductor manufacturing process. For example, the processing device 100 may be a thermal processing device 100, a thin film deposition device, an etching device, or other wafer processing device 100 involving gas participation. In some embodiments, the processing device 100 is a thermal processing device 100, and the workpiece 1011 is placed in the thermal processing device 100 for thermal processing. The reaction chamber 101 is a portion of the processing device 100 that accommodates the workpiece 1011, and the workpiece 1011 is placed in the reaction chamber 101 for processing. The first gas source may be a device for providing a first process gas, and the first gas source is generally disposed at the gas inlet port 102 of the reaction chamber 101. The gas inlet port 102 of the processing device 100 may be understood as being arranged at Figure 2 , Figure 3 The exhaust port 103 of the processing device 100 can be understood as being arranged on the left side. Figure 2 , Figure 3 on the right side.

[0053] The support mechanism 104 is a structure for supporting the workpiece 1011 in the reaction chamber 101. For example, the support mechanism 104 may include Figures 2 to 5 The structure that is sleeved around the workpiece 1011 may be a quartz tray. In some embodiments, the support mechanism 104 may further include a lift pin located at the bottom of the reaction chamber 101 and capable of being raised and lowered to adjust the lifting height of the wafer.

[0054] The inner chamber enclosure 107 may be located between the top wall of the reaction chamber 101 and the bottom wall of the reaction chamber 101, and a processing space is formed between the inner chamber enclosure 107, the top wall of the reaction chamber 101 and the bottom wall of the reaction chamber 101. The processing space may be divided into a first subspace 1073 and a second subspace 1074 by the support mechanism 104, which are used to process the first processing surface and the second processing surface of the workpiece 1011, respectively. In some embodiments, as Figures 3 to 5 As shown, a bottom plate 1012 is disposed on the bottom wall of the reaction chamber 101, a gas diffusion plate 106 is disposed on the top wall of the reaction chamber 101, an inner chamber enclosure 107 is located between the bottom plate 1012 and the gas diffusion plate 106, and a processing space is formed between the inner chamber enclosure 107, the bottom plate 1012, and the gas diffusion plate 106. In some embodiments, the inner chamber enclosure 107 may also be located between the support mechanism 104 and the bottom wall of the reaction chamber 101, and a processing space, i.e., a second subspace 1074, is formed between the inner chamber enclosure 107, the support mechanism 104, and the bottom wall. Alternatively, the inner chamber enclosure 107 may be located between the support mechanism 104 and the top wall of the reaction chamber 101, and a processing space, i.e., a first subspace 1073, is formed between the inner chamber enclosure 107, the support mechanism 104, and the top wall.

[0055] like Figure 1 , Figure 2 As shown, the inner chamber enclosure 107 may include two parts, one part is a first enclosure part 1071 located on one side of the inlet port 102 of the reaction chamber 101, and the other part is two enclosure walls 1072 extending from the first enclosure part 1071 toward the exhaust port 103. Figure 2 As shown, the left side of the first enclosure part 1071 is adapted to the reaction chamber 101, and is used to limit the left side space of the reaction chamber 101; the right side of the first enclosure part 1071, that is, the curved section is adapted to the support mechanism 104. It can be understood that the processing space is enclosed by the curved section, the two enclosure walls 1072, the support mechanism 104, the bottom plate 1012 or the bottom wall of the reaction chamber 101, and the gas diffusion plate 106 or the top wall of the reaction chamber 101. On the one hand, such a setting can reduce the space actually involved in the processing in the reaction chamber 101. During the processing of the workpiece 1011, the first process gas can be prevented from diffusing into the reaction chamber 101, so that the first process gas can directly enter the processing space with a smaller volume to participate in the processing, thereby improving the gas utilization rate, and then improving the sensitivity of the processing equipment 100 to the gas amount adjustment. On the other hand, the flow direction of the gas in the reaction chamber 101 can be standardized, so that a stable gas flow field is formed in the reaction chamber 101, and the stability of the processing effect of the workpiece 1011 is improved. For example, the processing device 100 uses a heat treatment device 100 , which is beneficial to the stable growth of the oxide film of the workpiece 1011 , and is beneficial to controlling the temperature in the processing space and improving the thermal field around the workpiece 1011 .

[0056] like Figure 2 As shown, the two enclosure walls 1072 can be extended from the curved section along the edge of the support mechanism 104, so as to better fit the support mechanism 104. A gas outlet 1075 is formed on the right side of the two enclosure walls 1072. When the workpiece 1011 is processed, the gas in the processing space can be discharged through the gas outlet 1075 and then discharged from the reaction chamber 101 through the exhaust port 103. In some embodiments, the size of the gas outlet 1075 is adjusted according to the flow rate of the process gas entering the reaction chamber 101. For example, when the flow rate of the process gas entering the reaction chamber 101 is large, an inner chamber enclosure 107 with a larger gas outlet 1075 can be selected, and vice versa.

[0057] In some embodiments, the two enclosure walls 1072 may be symmetrically arranged to avoid uneven gas flow in the processing space and affect the processing effect.

[0058] The interior of the first enclosure portion 1071 may include a gas channel, a first end of the gas channel is connected to the gas inlet port 102, and a second end of the gas channel is located in the reaction chamber 101. The first process gas flowing out from the gas inlet port 102 flows into the processing space through the first end of the gas channel, the gas channel, and the second end of the gas channel.

[0059] The first enclosure portion 1071 not only limits the space actually involved in the processing in the reaction chamber 101, but is also used to guide the first process gas into the processing space. It can be understood that the processing device 100 in this embodiment can adopt a side air intake method, for example Figure 2 , Figure 3 Left side air intake.

[0060] The gas channel structure inside the first enclosure portion 1071 can be adjusted according to process requirements to ensure that the first process gas discharged from the gas channel enters at least one of the first subspace 1073 or the second subspace 1074 .

[0061] For example, in some embodiments, the inner chamber enclosure 107 is located between the gas diffusion plate 106 and the bottom plate 1012, and the gas channel of the first enclosure portion 1071 may include a first sub-channel and a second sub-channel that are independent of each other, the first sub-channel is connected to the first subspace 1073, and the second sub-channel is connected to the second subspace 1074; the first process gas entering from the air inlet port 102 is divided into two parts by the first enclosure portion 1071, a part of the first process gas is discharged into the first subspace 1073 through the first sub-channel, on the one hand, the first processing surface of the workpiece 1011 can be processed, on the other hand, the consumption of the first process gas in the first subspace 1073 can be supplemented, and the other part of the first process gas is discharged into the second subspace 1074, on the one hand, the second processing surface of the workpiece 1011 can be processed, on the other hand, the pressure difference between the second subspace 1074 and the first subspace 1073 can be balanced to avoid the airflow of the first subspace 1073 and the second subspace 1074 from being connected, thereby affecting the processing effect of the workpiece 1011.

[0062] For example, in some embodiments, the inner chamber enclosure 107 is located between the gas diffusion plate 106 and the base plate 1012, and the gas channel is a single channel. The first process gas discharged from the second end of the gas channel is separated into two parts by the support mechanism 104. One part of the first process gas is discharged into the first subspace 1073. On the one hand, it can be used to treat the first processing surface of the workpiece 1011, and on the other hand, it can replenish the consumption of the first process gas in the first subspace 1073. The other part of the first process gas is discharged into the second subspace 1074. On the one hand, it can be used to treat the second processing surface of the workpiece 1011, and on the other hand, it can balance the pressure difference between the second subspace 1074 and the first subspace 1073 to avoid the airflow between the first subspace 1073 and the second subspace 1074 from being connected, thereby affecting the processing effect of the workpiece 1011.

[0063] For example Figures 3 to 5As shown, in some embodiments, the inner chamber enclosure 107 is located between the gas diffusion plate 106 and the base plate 1012, and the gas channel only includes the second sub-channel, that is, it is only connected to the second sub-space 1074. The first process gas entering from the gas inlet port 102 is discharged into the second sub-space 1074 through the gas channel. On the one hand, the second processing surface of the workpiece 1011 can be processed, and on the other hand, the pressure difference between the second sub-space 1074 and the first sub-space 1073 can be balanced to avoid the airflow of the first sub-space 1073 and the second sub-space 1074 from being connected, which affects the processing effect of the workpiece 1011. In other embodiments, according to process requirements, the air inlet port 102 can also be connected to other gas sources, which can provide process gas that does not participate in the processing of the workpiece 1011. The process gas can be discharged from the air inlet port 102 through the second sub-channel into the second sub-space 1074 to balance the pressure difference between the first sub-space 1073 and the second sub-space 1074, thereby avoiding the airflow of the first sub-space 1073 and the second sub-space 1074 from being connected and affecting the processing effect of the workpiece 1011.

[0064] like Figures 3 to 5 As shown, the processing equipment 100 may further include a top gas inlet device 105 , a first end of which is connected to the gas inlet port 102 , and a second end of which is located in the first subspace 1073 to deliver the first process gas into the first subspace 1073 .

[0065] It can be understood that the processing device 100 in this embodiment may include a combination of top gas intake and side gas intake. When implementing the processing, the first process gas provided by the first gas source can be discharged from the left side of the reaction chamber 101 to the first subspace 1073 through the top gas intake device 105, and after being processed, it flows out from the right side of the first subspace 1073. In some embodiments, the top gas intake device 105 can be made of quartz material.

[0066] Among them, the air inlet port 102 and the first enclosure part 1071 and the top air inlet device 105 can be understood as a three-way structure, that is, the air inlet port 102 is connected to the first enclosure part 1071 and the top air inlet device 105 respectively. In specific implementation, the first process gas can enter at least one of the gas channel of the first enclosure part 1071 and the top air inlet device 105 from the air inlet port 102. For example, the first process gas can enter the processing space from the top through the air inlet port 102 and the top air inlet device 105. Or the first process gas can enter the processing space from the side through the gas channel of the first enclosure part 1071. Furthermore, a part of the first process gas can enter the processing space from the top through the air inlet port 102 and the top air inlet device 105, and the other part can enter the processing space from the side through the gas channel of the first enclosure part 1071.

[0067] In some embodiments, the processing device 100 may further include a gas diffusion plate 106 located below the second end of the top air inlet device 105 , and the gas diffusion plate 106 includes a plurality of through holes.

[0068] The gas diffuser plate is Figures 3 to 5 In the structure shown by reference numeral 106, the gas diffusion plate 106 may be located in the top area of ​​the reaction chamber 101. The multiple through holes on the gas diffusion plate 106 may be through holes of the same specification and size. During the processing, the first process gas flows out from the second end of the top gas inlet device 105 and reaches the first processing surface of the workpiece 1011, that is, the upper surface of the workpiece 1011, through the multiple through holes. By providing multiple through holes of related specifications and sizes, the uniformity of the first process gas reaching the workpiece 1011 can be improved.

[0069] In some embodiments, the arrangement of the plurality of through holes on the gas diffusion plate 106 may be adjusted. For example, the plurality of through holes may be evenly distributed to improve the uniformity of the first process gas reaching the first processing surface of the workpiece 1011 .

[0070] In some embodiments, the inner chamber enclosure 107 also includes a second enclosure portion with the same configuration as the first enclosure portion 1071, and the second enclosure portion is arranged between the gas outlet 1075 and the exhaust port 103, and the processed first process gas is discharged from the processing space through the interior of the second enclosure portion.

[0071] The second enclosure portion can be connected to the two enclosure walls 1072 of the first enclosure portion 1071, or the second enclosure portion can also extend two enclosure walls toward the gas inlet port 102 and be interconnected with the two enclosure walls 1072 extending from the first enclosure portion 1071. This can not only further limit the space on the right side of the reaction chamber 101, but also improve the stability of the gas flow field in the processing space.

[0072] like Figure 2 As shown, in some embodiments, the processing equipment 100 also includes a side air intake device 108, which is connected to a second gas source to deliver a second process gas into the reaction chamber 101; the processing space is divided into a first subspace 1073 and a second subspace 1074 by a support mechanism 104, a first part of the second process gas flows into the first subspace 1073 to process a first processing surface of the workpiece 1011 located in the first subspace 1073, and a second part of the second process gas flows into the second subspace 1074.

[0073] The second gas source may be a device for providing a second process gas. The second gas source may be arranged Figure 2The left side, top side and bottom side of the reaction chamber 101. The second process gas can be the same as the first process gas or a combination of one or more components of the first process gas.

[0074] The gas volume of the second process gas may be the same as or different from the gas volume of the first process gas. For example, in some embodiments, when processing the workpiece 1011, the consumption of the first process gas is greater than the consumption of the second process gas, so the gas volume of the first process gas is adjusted to be greater than the gas volume of the second process gas, thereby improving the processing effect of the workpiece 1011.

[0075] The outlet end of the side air inlet device 108 can be positioned laterally at Figure 2 The midpoint between the gas inlet port 102 and the gas outlet port 103. With this arrangement, the gas discharged from the gas outlet covers substantially the same area on the left side of the workpiece 1011 and the right side of the workpiece 1011, thereby improving the uniformity of processing the workpiece 1011.

[0076] In some embodiments, the outlet end of the side air inlet device 108 can also be divided into two parts, an upper part and an lower part, by the support mechanism 104. The upper part of the outlet end is connected to the first subspace 1073, and is used to transport the second process gas to the first subspace 1073. The lower part of the outlet end is connected to the second subspace 1074, and is used to transport the second process gas to the second subspace 1074.

[0077] The sizes of the upper and lower parts of the outlet end of the side air inlet device 108 can be adjusted according to the gas demand of the first subspace 1073 and the second subspace 1074. For example, if the demand for the second process gas in the first subspace 1073 is greater than the demand for the second process gas in the second subspace 1074, the size of the upper part of the outlet end is set to be larger than the size of the lower part, so as to meet the different gas volume requirements of the processing equipment 100.

[0078] like Figure 6 As shown, an embodiment of the present disclosure also provides a method for processing a semiconductor workpiece, comprising:

[0079] S101: allowing a first process gas to enter a reaction chamber of a processing device through a gas inlet port of the processing device;

[0080] S102: guiding and confining the first process gas entering the reaction chamber to gather in the processing space of the heat treatment equipment for processing the semiconductor workpiece;

[0081] S103: the first process gas after being processed is discharged from the processing space through the gas outlet of the processing equipment;

[0082] S104: The exhausted first process gas is discharged from the reaction chamber through an exhaust port of the processing equipment.

[0083] According to the processing method disclosed in the present invention, the workpiece can be placed in the processing space for processing. On the one hand, the first process gas can be prevented from diffusing into the reaction chamber, thereby improving gas utilization. On the other hand, the flow direction of the gas in the reaction chamber can be standardized to form a stable gas flow field.

[0084] In some embodiments, S102 includes:

[0085] An inner chamber enclosure connected to the gas inlet port is arranged in the reaction chamber, the inner chamber enclosure includes a first enclosure part and two enclosure walls extending from the first enclosure part, wherein the inner chamber enclosure and the inner wall of the reaction chamber define a processing space, and the interior of the first enclosure part defines a gas channel; the first process gas entering the reaction chamber is guided to the processing space through the gas channel; the first process gas entering the processing space is gathered in the processing space by the inner chamber enclosure and the inner wall enclosure of the reaction chamber for processing the semiconductor workpiece.

[0086] In some embodiments, the first process gas entering the reaction chamber is guided to the processing space through the gas channel, including: setting a support mechanism in the reaction chamber, and the processing space is divided into a first subspace and a second subspace by the support mechanism; dividing the gas channel into a first subchannel and a second subchannel that are independent of each other, the first subchannel is connected to the first subspace, and the second subchannel is connected to the second subspace; so that the first process gas entering from the gas inlet port is divided into two parts by the first enclosure part, a part of the first process gas is discharged into the first subspace through the first subchannel to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second subspace through the second subchannel to process the second processing surface of the workpiece.

[0087] In some embodiments, the first process gas entering the reaction chamber is guided to the processing space through the gas channel, including: a support mechanism is set in the reaction chamber, and the processing space is divided into a first subspace and a second subspace by the support mechanism; so that the first process gas discharged from the gas channel is divided into two parts by the support mechanism, a part of the first process gas is discharged into the first subspace to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second subspace to process the second processing surface of the workpiece.

[0088] In some embodiments, the first process gas entering the reaction chamber is guided to the processing space through the gas channel, including: setting a support mechanism in the reaction chamber, and the processing space is divided into a first subspace and a second subspace by the support mechanism; configuring the gas channel to be connected to the second subspace, so that the first process gas entering from the gas inlet port is discharged into the second subspace through the gas channel to process the second processing surface of the workpiece.

[0089] In some embodiments, the processing method further includes: setting a top gas inlet device connected to the gas inlet port in the reaction chamber, the first end of the top gas inlet device is connected to the gas inlet port, and the second end of the top gas inlet device is located in the first subspace to guide the first process gas into the first subspace.

[0090] In some embodiments, the processing method further includes: disposing a gas diffusion plate below the second end of the top gas inlet device, the gas diffusion plate including a plurality of through holes for adjusting the distribution of the first process gas in the first subspace.

[0091] In some embodiments, the gas outlet is defined by the distance between two enclosure walls.

[0092] In some embodiments, the first process gas after treatment is discharged from the processing space through the gas outlet of the processing equipment, including: setting a second enclosure part with the same configuration as the first enclosure part between the gas outlet and the exhaust port, so that the first process gas after treatment is discharged from the processing space through the second enclosure part.

[0093] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0094] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0095] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0096] In the present disclosure, unless otherwise expressly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0097] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0098] The above specific implementations do not constitute a limitation on the protection scope of the present disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A processing device for semiconductor workpiece processing, comprising: A reaction chamber, used to accommodate a workpiece to be processed; an inlet port and an exhaust port, wherein the inlet port is connected to a first gas source to deliver a first process gas into the reaction chamber to process the workpiece, and the exhaust port is used to exhaust the first process gas out of the reaction chamber; A supporting mechanism, located in the reaction chamber and used for supporting the workpiece; An inner chamber enclosure is located in the reaction chamber, the inner chamber enclosure comprises a first enclosure portion and two enclosure walls extending from the first enclosure portion, a gas outlet is formed between the two enclosure walls, and the two enclosure walls at least partially surround the support mechanism and fit the edge of the support mechanism; The inner chamber enclosure, the support mechanism and the inner wall of the reaction chamber define a processing space, and the first process gas flowing out of the gas inlet port flows into the processing space and then leaves the processing space through the gas outlet of the inner chamber enclosure.

2. The processing device according to claim 1, wherein: The first enclosure portion of the inner chamber enclosure includes a curved section, and the curved section is adapted to the shape of the support mechanism.

3. The processing device according to claim 1, wherein: The interior of the first enclosure portion includes a gas channel, a first end of the gas channel is connected to the gas inlet port, and a second end of the gas channel is located in the reaction chamber; The first process gas flowing out from the gas inlet port flows into the processing space through the first end of the gas channel, the gas channel and the second end of the gas channel.

4. The processing device according to claim 3, wherein: The supporting mechanism comprises: a quartz tray, which is used to separate the processing space into a first subspace and a second subspace; and a first process gas exhausted from the second end of the gas channel enters at least one of the first subspace and the second subspace.

5. The processing device according to claim 4, wherein: The gas channel comprises a first sub-channel and a second sub-channel which are independent of each other, the first sub-channel is communicated with the first sub-space, and the second sub-channel is communicated with the second sub-space; Among them, the first process gas entering from the air inlet port is divided into two parts by the first enclosure part, one part of the first process gas is discharged into the first sub-space through the first sub-channel to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second sub-space through the second sub-channel.

6. The processing device according to claim 4, wherein: The first process gas discharged from the second end of the gas channel is divided into two parts by the supporting mechanism. One part of the first process gas is discharged into the first subspace to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second subspace.

7. The processing device according to claim 4, wherein: The second end of the gas channel is in communication with the second subspace, and the first process gas entering from the gas inlet port is discharged into the second subspace through the gas channel.

8. The processing device according to any one of claims 1 to 7, wherein: The inner chamber enclosure also includes a second enclosure portion having the same configuration as the first enclosure portion, wherein the second enclosure portion is disposed between the gas outlet and the exhaust port, and the first process gas after treatment is discharged from the processing space through the second enclosure portion.

9. The processing device according to any one of claims 5 to 7, wherein: The processing equipment further includes a top gas inlet device, a first end of which is connected to the gas inlet port, and a second end of which is located in the first subspace to transport the first process gas into the first subspace.

10. The processing device according to claim 9, wherein: The processing equipment further includes a gas diffusion plate located below the second end of the top air inlet device, wherein the gas diffusion plate includes a plurality of through holes.

11. The processing device according to any one of claims 1 to 7, wherein: The processing equipment further includes a side gas inlet device, the side gas inlet device being connected to a second gas source to deliver a second process gas into the reaction chamber; The processing space is divided into a first subspace and a second subspace by the supporting mechanism, a first portion of the second process gas flows into the first subspace to process a first processing surface of the workpiece in the first subspace, and a second portion of the second process gas flows into the second subspace.

12. A method for processing a semiconductor workpiece, comprising: Allowing a first process gas to enter a reaction chamber of the processing device through a gas inlet port of the processing device; The first process gas entering the reaction chamber is guided and confined to be gathered in the processing space of the heat treatment equipment for processing the semiconductor workpiece.

13. The processing method according to claim 12, wherein: The step of guiding and confining the first process gas entering the reaction chamber to gather in the processing space of the heat treatment equipment for processing the semiconductor workpiece comprises: An inner chamber enclosure connected to the gas inlet port is arranged in the reaction chamber, the inner chamber enclosure comprising a first enclosure portion and two enclosure walls extending from the first enclosure portion, wherein the inner chamber enclosure and the inner wall of the reaction chamber define a processing space, and the interior of the first enclosure portion defines a gas channel; The first process gas entering the reaction chamber is guided into the processing space through the gas channel; The first process gas entering the processing space is gathered in the processing space by the inner chamber enclosure and the inner wall enclosure of the reaction chamber for processing the semiconductor workpiece.

14. The processing method according to claim 13, wherein: The first process gas entering the reaction chamber is guided to the processing space through the gas channel, comprising: A support mechanism is arranged in the reaction chamber, and the processing space is divided into a first subspace and a second subspace by the support mechanism; Separating the gas channel into a first sub-channel and a second sub-channel that are independent of each other, wherein the first sub-channel is connected to the first sub-space, and the second sub-channel is connected to the second sub-space; The first process gas entering from the gas inlet port is divided into two parts by the first enclosure part, one part of the first process gas is discharged into the first subspace through the first subchannel to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second subspace through the second subchannel.

15. The processing method according to claim 13, wherein: The first process gas entering the reaction chamber is guided to the processing space through the gas channel, comprising: A support mechanism is arranged in the reaction chamber, and the processing space is divided into a first subspace and a second subspace by the support mechanism; The first process gas discharged from the gas channel is divided into two parts by the supporting mechanism, one part of the first process gas is discharged into the first subspace to process the first processing surface of the workpiece, and the other part of the first process gas is discharged into the second subspace.

16. The processing method according to claim 13, wherein: The first process gas entering the reaction chamber is guided to the processing space through the gas channel, comprising: A support mechanism is arranged in the reaction chamber, and the processing space is divided into a first subspace and a second subspace by the support mechanism; The gas channel is configured to communicate with the second subspace, so that the first process gas entering from the gas inlet port is discharged into the second subspace through the gas channel.

17. The processing method according to any one of claims 14 to 16, further comprising: A top gas inlet device connected to the gas inlet port is arranged in the reaction chamber, a first end of the top gas inlet device is connected to the gas inlet port, and a second end of the top gas inlet device is located in the first subspace to guide the first process gas into the first subspace.

18. The processing method according to claim 17, further comprising: A gas diffusion plate is arranged below the second end of the top gas inlet device, and the gas diffusion plate comprises a plurality of through holes for adjusting the distribution of the first process gas in the first subspace.

19. The processing method according to any one of claims 13 to 16, wherein: The gas outlet is defined by the distance between the two enclosure walls.

20. The processing method according to any one of claims 13 to 16, wherein: The first process gas after the treatment is discharged from the processing space through the gas outlet of the processing equipment, comprising: A second enclosure portion having the same configuration as the first enclosure portion is disposed between the gas outlet and the exhaust port, so that the first process gas after treatment is discharged from the processing space through the second enclosure portion.

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