Reaction chamber

Abstract

The invention provides a reaction chamber, and relates to the technical field of semiconductor manufacturing. The embodiment of the invention provides a reaction chamber, and the chamber comprises a chamber substrate which is provided with a first sub-chamber and a second sub-chamber; the first surface of the semiconductor workpiece is located in the first sub-chamber, and the second surface of the semiconductor workpiece is located in the second sub-chamber; the second surface of the semiconductor workpiece is opposite to the first surface, and the second surface is located below the first surface; the lateral air inlet device is provided with a lateral air inlet plate and a lateral diffusion plate, and the lateral air inlet plate is connected with the air inlet side of the chamber base body; the side diffusion plate is provided with a plurality of air holes, one part of the air holes are used for diffusing first process gas entering the first sub-cavity from the side air inlet plate, and the other part of the air holes are used for diffusing second process gas entering the second sub-cavity from the side air inlet plate.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a reaction chamber. Background Art

[0002] Wafer heat treatment is a key step in the semiconductor wafer manufacturing process. Wafer heat treatment is usually carried out in a closed reaction chamber, where the wafer can be heated and process gases can be introduced into the reaction chamber to cause a chemical reaction in the wafer. How to reasonably design the structure of the reaction chamber is one of the current research topics. Summary of the invention

[0003] The embodiment of the present disclosure provides a reaction chamber, comprising: a chamber base, having a first sub-chamber and a second sub-chamber; the first surface of the semiconductor workpiece is located in the first sub-chamber, and the second surface of the semiconductor workpiece is located in the second sub-chamber; the second surface of the semiconductor workpiece is arranged opposite to the first surface, and the second surface is located below the first surface; a side air inlet device, connected to the air inlet side of the chamber base; the side air inlet device has a side air inlet plate and a side diffusion plate, and the side air inlet plate is connected to the air inlet side of the chamber base; the side diffusion plate is provided with a plurality of air holes; wherein the side diffusion plate has a first area and a second area, and the first area is located above the second area; the air holes located in the first area are used to diffuse the first process gas entering the first sub-chamber from the side air inlet plate, and the air holes located in the second area are used to diffuse the second process gas entering the second sub-chamber from the side air inlet plate.

[0004] In some embodiments, the plurality of pores located in the first region are evenly distributed.

[0005] In some embodiments, the plurality of pores located in the second region are evenly distributed.

[0006] In some embodiments, the area of ​​the first region is greater than or equal to the area of ​​the second region.

[0007] In some embodiments, the number of pores located in the first region is greater than the number of pores located in the second region.

[0008] In some embodiments, the diameter of the pores located in the first region is greater than or equal to the diameter of the pores located in the second region.

[0009] In some embodiments, among the multiple air holes located in the first region, at least two rows of the air holes are staggered.

[0010] In some embodiments, among the multiple air holes located in the second region, at least two rows of the air holes are staggered.

[0011] In some embodiments, among the plurality of air holes located in the first region, a distance between a relatively lower air hole and the first surface of the semiconductor workpiece is less than or equal to a first threshold.

[0012] In some embodiments, the chamber base has an air inlet side and an air outlet side opposite to each other in the longitudinal direction; the side diffuser plate extends in the transverse direction of the chamber base, and the transverse dimension of the side diffuser plate is greater than or equal to the diameter of the semiconductor workpiece.

[0013] In some embodiments, the reaction chamber further includes: a partition plate, wherein the partition plate is located in the chamber base and is used to separate the chamber base into a first sub-chamber and a second sub-chamber.

[0014] The reaction chamber provided in this embodiment is conducive to simplifying the gas intake structure of the reaction chamber, improving the structural compactness of the reaction chamber, and is also conducive to improving the uniformity of the second process gas entering the second sub-chamber, thereby improving the processing effect on the semiconductor workpiece.

[0015] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present disclosure will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in accordance with the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0017] Figure 1 A cross-sectional schematic diagram showing a reaction chamber according to an embodiment of the present disclosure;

[0018] Figure 2 yes Figure 1 A magnified schematic diagram of part A;

[0019] Figure 3 A schematic structural diagram of a side diffusion plate according to an embodiment of the present disclosure is shown.

[0020] Explanation of the reference numerals: 100 - chamber base; 100a - air inlet side; 100b - air outlet side; 110 - first sub-chamber; 120 - second sub-chamber; 130 - partition plate; 140 - support mechanism; 200 - side air inlet device; 210 - side air inlet plate; 220 - side diffusion plate; 220a - first region; 220b - second region; 221 - air hole; 300 - semiconductor workpiece. DETAILED DESCRIPTION

[0021] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0022] Please refer to Figures 1 to 3 The present embodiment provides a reaction chamber, comprising: a chamber base 100 and a side air inlet device 200. The chamber base 100 has an air inlet side 100a and an air outlet side 100b arranged opposite to each other, and the side air inlet device 200 is connected to the air inlet side 100a of the chamber base 100. The process gas flows into the chamber base 100 from the side air inlet device 200 and flows out from the air outlet side 100b.

[0023] The chamber base 100 is in a columnar shape, for example, the chamber base 100 is in a prism shape or a cylindrical shape. For ease of description, this embodiment will take the chamber base 100 in a quadrangular prism shape as an example, take the axial direction of the chamber base 100 as the vertical direction, take the gravity direction as the bottom, take the direction from the air inlet side 100a to the air outlet side 100b as the longitudinal direction, and take the direction perpendicular to the vertical direction and the longitudinal direction as the transverse direction as an example for description.

[0024] The chamber base 100 has an upper portion and a lower portion opposite to each other, and further has a side portion connected between the upper portion and the lower portion. The air inlet side 100a and the air outlet side 100b correspond to the two opposite side portions, respectively.

[0025] During the heating process, the process gas flows into the chamber base 100 from the air inlet side 100a of the chamber base 100 (for example, the left side in the figure) and flows out from the opposite air outlet side 100b (for example, the right side in the figure), thereby forming a stable gas flow field in the reaction chamber. The semiconductor workpiece 300 is located in the stable gas flow field, which can improve the heat treatment effect of the workpiece.

[0026] A support mechanism 140 is disposed in the chamber base 100. The support mechanism 140 is a structure in the reaction chamber for supporting a semiconductor workpiece 300 (e.g., a wafer). In some examples, the support mechanism 140 may include a quartz tray, and the quartz tray may be provided with ejector pins, and the number of ejector pins may be adjusted according to process requirements. For example, when the workpiece size is large, a larger number of ejector pins may be used to improve the stability of the semiconductor workpiece in the reaction chamber.

[0027] A heating device is also provided in the chamber base 100. The heating device is a device for providing heat treatment energy. There may be two heating devices, which are spaced apart vertically, one of which is located above the semiconductor workpiece 300 to heat the first surface of the semiconductor workpiece 300, and the other is located below the semiconductor workpiece 300 to heat the second surface of the semiconductor workpiece 300, thereby improving the uniformity of the heat treatment result. In other examples, there may also be one heating device, which may be located above or below the semiconductor workpiece 300, and may be adjusted according to process requirements.

[0028] The chamber base 100 has a first sub-chamber 110 and a second sub-chamber 120; the first surface of the semiconductor workpiece 300 (i.e., the upper surface of the semiconductor workpiece 300) is located in the first sub-chamber 110, and the second surface of the semiconductor workpiece 300 (i.e., the lower surface of the semiconductor workpiece 300) is located in the second sub-chamber 120; the second surface of the semiconductor workpiece 300 is arranged opposite to the first surface, and the second surface is located below the first surface.

[0029] Optionally, the reaction chamber may further include: a partition plate 130, the partition plate 130 is located in the chamber base 100, and is used to separate the chamber base 100 into a relatively independent first sub-chamber 110 and a second sub-chamber 120. The first sub-chamber 110 is located above the second sub-chamber 120. In this way, the first surface of the semiconductor workpiece 300 located in the first sub-chamber 110 and the second surface located in the second sub-chamber 120 are respectively located in relatively independent spaces to undergo heat treatment, which is conducive to improving the heat treatment efficiency of the workpiece.

[0030] The partition plate 130 may be plate-shaped. The shape of the partition plate 130 may be adapted to the shape of the inner space of the chamber base 100. For example, when the cross section of the inner space of the chamber base 100 is rectangular, the partition plate 130 is also rectangular.

[0031] The partition plate 130 has an opening adapted to the shape of the semiconductor workpiece 300, and the semiconductor workpiece 300 is arranged corresponding to the opening. For example, when the semiconductor workpiece 300 is circular, the opening is also circular. The center of the opening of the partition plate 130 can be coaxial with the center of the semiconductor workpiece 300, and the radius of the opening is slightly larger than the radius of the semiconductor workpiece 300, so as to form a gap between the opening and the semiconductor workpiece 300 to allow the semiconductor workpiece 300 to rotate.

[0032] The difference between the radius of the opening and the radius of the semiconductor workpiece 300 can be less than the second threshold value, which can not only avoid the collision between the semiconductor workpiece 300 and the partition plate 130, but also reduce the gas flow in the first sub-chamber and the second sub-chamber 120 as much as possible. The specific value of the second threshold value can be set according to actual needs. The partition plate can be made of transparent quartz material.

[0033] The side air inlet device 200 may be connected to the middle of the air inlet side 100a of the chamber base 100. In the vertical direction, the side air inlet device 200 is connected to the middle of the air inlet side 100a of the chamber base 100, so that the side air inlet device 200 is arranged closer to the semiconductor workpiece 300, which is conducive to simplifying the structure of the side air inlet device 200. In the horizontal direction, the side air inlet device 200 is connected to the middle of the air inlet side 100a of the chamber base 100, which is conducive to the correspondence between the side air inlet device 200 and the semiconductor workpiece 300, and improves the utilization rate of the process gas entering from the side air inlet device 200.

[0034] The side air inlet device 200 has a side air inlet plate 210 and a side diffuser plate 220. The side air inlet plate 210 is connected to the air inlet side 100a of the chamber base 100. The side diffuser plate 220 is provided with a plurality of air holes 221, wherein a part of the air holes 221 is used to uniformly diffuse the first process gas entering the first sub-chamber 110 from the side air inlet plate 210, and another part of the air holes 221 is used to uniformly diffuse the second process gas entering the second sub-chamber 120 from the side air inlet plate 210. The first process gas flows through the first surface of the semiconductor workpiece 300, and the second process gas flows through the second surface of the semiconductor workpiece 300. The components of the first process gas and the second process gas may be the same or different, and may be specifically set according to actual needs.

[0035] Exemplarily, the side air inlet plate 210 includes: an air inlet plate substrate, the air inlet plate substrate is provided with a first air inlet channel and a second air inlet channel, the first process gas entering from the first air inlet channel can flow to the first sub-chamber 110, and the second process gas entering from the second air inlet channel can flow to the second sub-chamber 120.

[0036] In some examples, a mounting hole is provided on the side wall of the air inlet side 100a of the chamber base 100, the axial direction of the mounting hole is parallel to the longitudinal direction of the chamber base 100, and the mounting hole penetrates the side wall in the longitudinal direction. The side air inlet plate 210 also includes a plug-in portion, which is connected to the inner side of the air inlet plate base toward the central axis of the chamber base 100; the plug-in portion is inserted into the mounting hole, and the plug-in portion can be sealed with the mounting hole. The first air inlet channel and the second air inlet channel also extend into the plug-in portion.

[0037] In other examples, the air inlet plate substrate may also be fastened to the side wall of the air inlet side 100a of the chamber substrate 100 by fasteners, and the air inlet plate substrate is sealed with the side wall. The first process gas entering from the first air inlet channel of the air inlet plate substrate enters the first sub-chamber 110 through the through hole provided in the chamber substrate 100. The second process gas entering from the second air inlet channel of the air inlet plate substrate enters the second sub-chamber 120 through the through hole provided in the chamber substrate 100.

[0038] The side diffusion plate 220 is located inside the side air inlet plate 210 , so that the side diffusion plate 220 can evenly diffuse the process gas entering from the side air inlet plate 210 , thereby improving the uniformity of the process gas entering the chamber base 100 .

[0039] The side diffuser plate 220 may be extended in the lateral direction, and the two lateral edges of the side diffuser plate 220 may be connected to the corresponding side walls of the chamber base 100. For example, the corresponding side walls of the chamber base 100 are provided with mounting grooves, and the portions of the side diffuser plate 220 close to the two edges may cooperate with the mounting grooves to improve the installation reliability of the side diffuser plate 220. In other examples, there may also be a preset distance between the two edges of the side diffuser plate 220 and the corresponding side walls of the chamber base 100, which may be set according to actual needs.

[0040] The side diffusion plate 220 may extend vertically, and an upper edge of the side diffusion plate 220 may contact a top wall of the first sub-chamber 110 , and a lower edge of the side diffusion plate 220 may contact a bottom wall of the second sub-chamber 120 .

[0041] The side diffusion plate 220 has a first area 220a and a second area 220b, and the first area 220a is located above the second area 220b. The first area 220a and the second area 220b are respectively provided with air holes 221. The first area 220a can correspond to the first sub-chamber 110, and the second area 220b can correspond to the second sub-chamber 120. The air holes 221 located in the first area 220a are used to uniformly diffuse the first process gas entering the first sub-chamber 110 from the side air inlet plate 210, and the air holes 221 located in the second area 220b are used to uniformly diffuse the second process gas entering the second sub-chamber 120 from the side air inlet plate.

[0042] In this embodiment, by setting up a side air intake device 200, the first process gas is supplied to the first sub-chamber 110 and the second process gas is supplied to the second sub-chamber 120 through the side air intake device 200, which can not only meet the process requirements, but also help to simplify the air intake structure of the reaction chamber, improve the structural compactness of the reaction chamber, and help to achieve lightweight and miniaturization of the reaction chamber; by setting up a side diffusion plate 220 in the side air intake device 200, the uniformity of the first process gas entering the first sub-chamber 110 and the uniformity of the second process gas entering the second sub-chamber 120 can be improved, thereby improving the processing effect on the semiconductor workpiece 300.

[0043] In some embodiments, the plurality of pores 221 located in the first region 220a are evenly distributed. For the plurality of pores 221 located in the first region 220a and in the same row, the first spacing between two adjacent pores 221 is equal; when the plurality of pores 221 are distributed in multiple rows, there is a first spacing between two adjacent pores 221 in each row; when the plurality of pores 221 are distributed in at least three rows, the second spacing between the pores 221 in two adjacent rows is equal. The first spacing and the second spacing refer to the distance between the central axes of the corresponding two pores 221.

[0044] For example, the ratio between the diameter of the air hole 221 and the first spacing may be 0.15 or 0.16 or 0.17 or 0.18 or 0.1 or 0.20 or 0.21 or 0.22 or 0.23 or 0.24 or 0.25, or a ratio between any two of the above.

[0045] The ratio between the diameter of the air hole 221 and the second spacing may be 0.43 or 0.44 or 0.45 or 0.46 or 0.48 or 0.49 or 0.50 or 0.51 or 0.52 or 0.53, or a ratio between any two of the above.

[0046] The multiple pores 221 located in the second area 220b are evenly distributed. For the multiple pores 221 located in the second area 220b and in the same row, the third spacing between two adjacent pores 221 is equal; when the multiple pores 221 are distributed in multiple rows, there is a third spacing between two adjacent pores 221 in each row; when the multiple pores 221 are distributed in at least three rows, the fourth spacing between the pores 221 in two adjacent rows is equal. The third spacing may be equal to the first spacing; the fourth spacing may be equal to the second spacing. The third spacing and the fourth spacing refer to the distance between the central axes of the corresponding two pores 221.

[0047] Illustratively, the ratio between the diameter of the air hole 221 and the third spacing may be 0.15 or 0.16 or 0.17 or 0.18 or 0.1 or 0.20 or 0.21 or 0.22 or 0.23 or 0.24 or 0.25, or a ratio between any two of the above.

[0048] The ratio between the diameter of the air hole 221 and the fourth interval may be 0.43 or 0.44 or 0.45 or 0.46 or 0.48 or 0.49 or 0.50 or 0.51 or 0.52 or 0.53, or a ratio between any two of the above.

[0049] In other examples, the side diffuser 220 has two edges opposite to each other in the transverse direction, and the spacing between two adjacent air holes 221 can be increased in the direction toward the two edges. Alternatively, the side diffuser 220 has two edges opposite to each other in the transverse direction, and the spacing between two adjacent air holes 221 can be reduced in the direction toward the two edges. Alternatively, for the multiple air holes 221 located in the first area 220a or the multiple air holes 221 located in the second area 220b, the spacing between two adjacent rows of air holes 221 can be gradually reduced in the direction toward the semiconductor workpiece 300.

[0050] In some embodiments, the area of ​​the first region 220a is greater than or equal to the area of ​​the second region 220b. For example, when the amount of the first process gas entering the first sub-chamber 110 needs to be greater than or equal to the amount of the second process gas entering the second sub-chamber 120, the area of ​​the first region 220a may be greater than or equal to the area of ​​the second region 220b, so that the opening area of ​​the first region 220a is greater than or equal to the opening area of ​​the second region 220b.

[0051] In other examples, when the amount of the first process gas entering the first sub-chamber 110 needs to be smaller than the amount of the second process gas entering the second sub-chamber 120, the area of ​​the first region 220a may be smaller than the area of ​​the second region 220b, so as to make the opening area of ​​the first region 220a smaller than the opening area of ​​the second region 220b.

[0052] It can be understood that the area of ​​the first region 220a and the area of ​​the second region 220b can be specifically set according to process requirements.

[0053] In some embodiments, the number of pores 221 located in the first area 220a is greater than the number of pores 221 located in the second area 220b, so that the amount of first process gas entering the first sub-chamber 110 from the pores 221 in the first area 220a is greater than the amount of second process gas entering the second sub-chamber 120.

[0054] Among them, the ratio of the number of pores 221 located in the second area 220b to the number of pores 221 located in the first area 220a can be set according to actual needs. For example, the ratio of the number of pores 221 located in the second area 220b to the number of pores 221 located in the first area 220a can be 0.60 or 0.61 or 0.62 or 0.63 or 0.64 or 0.65 or 0.66 or 0.67 or 0.68 or 0.69 or 0.70, or a ratio between any two of the above.

[0055] In other examples, when the amount of the first process gas entering the first sub-chamber 110 needs to be equal to or less than the amount of the second process gas entering the second sub-chamber 120, the number of pores 221 located in the first area 220a is equal to or less than the number of pores 221 located in the second area 220b.

[0056] In some embodiments, the diameter of the pores 221 located in the first region 220a is greater than or equal to the diameter of the pores 221 located in the second region 220b, so that the amount of the first process gas entering the first sub-chamber 110 from the pores 221 in the first region 220a is greater than the amount of the second process gas entering the second sub-chamber 120.

[0057] Among them, the ratio of the diameter of the pores 221 located in the second area 220b to the diameter of the pores 221 located in the first area 220a can be set according to actual needs. For example, the ratio of the number of pores 221 located in the second area 220b to the number of pores 221 located in the first area 220a can be 0.60 or 0.61 or 0.62 or 0.63 or 0.64 or 0.65 or 0.66 or 0.67 or 0.68 or 0.69 or 0.70, or the ratio between any two of the above.

[0058] In other examples, when the amount of the first process gas entering the first sub-chamber 110 needs to be equal to or less than the amount of the second process gas entering the second sub-chamber 120, the diameter of the pores 221 located in the first area 220a is equal to or less than the diameter of the pores 221 located in the second area 220b.

[0059] In some embodiments, among the multiple air holes 221 located in the first region 220a, at least two air holes 221 are staggered. Taking the air holes 221 located in the first region 220a distributed in two rows as an example, the central axes of the upper and lower air holes 221 are staggered; that is, the central axis of the air hole 221 in the upper row is located between the central axes of the two adjacent air holes 221 in the lower row; for example, the central axis of the air hole 221 in the upper row is equal to the distance between the central axes of the two corresponding air holes 221 in the lower row.

[0060] When the air holes 221 located in the first area 220a are distributed in at least three rows, the central axes of two adjacent air holes 221 can be staggered, and the central axes of two spaced air holes 221 can be arranged correspondingly. The central axes of two air holes 221 can be arranged correspondingly means that the line connecting the central axes of the upper and lower corresponding air holes 221 in the two air holes 221 is parallel to the vertical direction.

[0061] Taking the example that the air holes 221 located in the first area 220a are distributed in three rows, and the three rows are respectively an upper row, a middle row and a lower row, then the central axis of the air hole 221 located in the upper row is staggered with the central axis of the air hole 221 located in the middle row, the central axis of the air hole 221 located in the middle row is staggered with the central axis of the air hole 221 located in the lower row, and the central axis of the air hole 221 located in the upper row can correspond to the central axis of the air hole 221 located in the lower row.

[0062] The arrangement of the air holes 221 in the first area 220a can be specifically set according to actual needs. For example, the central axes of the air holes 221 in two adjacent rows can also be set accordingly.

[0063] In some embodiments, among the multiple air holes 221 located in the second region 220b, at least two air holes 221 are staggered. Taking the air holes 221 located in the second region 220b distributed in two rows as an example, the central axes of the upper and lower air holes 221 are staggered; that is, the central axis of the air hole 221 in the upper row is located between the central axes of the two adjacent air holes 221 in the lower row; for example, the central axis of the air hole 221 in the upper row is equal to the distance between the central axes of the two corresponding air holes 221 in the lower row.

[0064] When the air holes 221 located in the second area 220b are distributed in at least three rows, the central axes of two adjacent air holes 221 can be staggered, and the central axes of two spaced air holes 221 can be arranged correspondingly. The central axes of two air holes 221 can be arranged correspondingly means that the line connecting the central axes of the upper and lower corresponding air holes 221 in the two air holes 221 is parallel to the vertical direction.

[0065] Taking the example that the air holes 221 located in the second area 220b are distributed in three rows, and the three rows are respectively an upper row, a middle row and a lower row, then the central axis of the air holes 221 located in the upper row is staggered with the central axis of the air holes 221 located in the middle row, the central axis of the air holes 221 located in the middle row is staggered with the central axis of the air holes 221 located in the lower row, and the central axis of the air holes 221 located in the upper row can correspond to the central axis of the air holes 221 located in the lower row.

[0066] The arrangement of the air holes 221 in the second area 220b can be specifically set according to actual needs. For example, the central axes of the air holes 221 in two adjacent rows can also be set accordingly.

[0067] In some embodiments, among the plurality of pores 221 located in the first region 220a, the distance between the pores 221 located relatively below and the first surface of the semiconductor is less than or equal to the first threshold value. The specific value of the first threshold value can be set according to actual needs. In this example, by setting the distance between the pores 221 located below and the first surface of the semiconductor to be smaller, more first process gas can be in contact with the first surface of the semiconductor workpiece 300, thereby improving the utilization rate of the first process gas.

[0068] Optionally, the distance between the air hole 221 located below and the first surface of the semiconductor is greater than the thickness of the semiconductor workpiece 300. For example, in the vertical direction, the ratio between the distance between the air hole 221 located below and the first surface of the semiconductor and the thickness of the semiconductor workpiece 300 may be 2.50, 2.55, 2.60, 2.70, 2.75, 2.80, 2.85, or 2.90, or a ratio between any two of the above.

[0069] In this example, by reasonably setting the distance between the air hole 221 located below and the first surface of the semiconductor, it is beneficial to improve the utilization rate of the first process gas and adapt to the semiconductor workpiece 300 located at different heights, so that the reaction chamber of this embodiment can be applied to more scenarios.

[0070] In some examples, the air holes 221 located in the first region 220a are straight holes, that is, the central axis of the air holes 221 located in the first region 220a is parallel to the specific longitudinal direction of the chamber.

[0071] In other examples, at least some of the pores 221 in the first region 220a are tilted, and along the direction toward the central axis of the chamber base 100, the pores 221 are gradually tilted downward to facilitate guiding the first process gas to flow toward the first surface of the semiconductor workpiece 300, thereby facilitating improving the utilization rate of the first process gas.

[0072] Take the case where the air holes 221 in the first area 220a are distributed in two rows, where the air holes 221 in the lower row are straight holes, and the air holes 221 in the upper row are tilted, and the air holes 221 are gradually tilted downward along the direction toward the central axis of the chamber base 100. Alternatively, both air holes 221 are tilted, and the central axis of the air holes 221 in the lower row has a first angle with the horizontal plane, and the central axis of the air holes 221 in the upper row has a second angle with the horizontal plane; the first angle and the second angle can be equal, or the first angle is greater than the second angle, or the first angle is less than the second angle; the specific values ​​of the first angle and the second angle can be set according to actual needs.

[0073] Take the distribution of the air holes 221 in the first area 220a in three rows as an example, wherein the air holes 221 in the lower row are straight holes, and the air holes 221 in the middle row and the upper row are tilted, and along the direction toward the central axis of the chamber base 100, the air holes 221 are gradually tilted downward; wherein, there is a third angle between the central axis of the air holes 221 in the middle row and the horizontal plane, and there is a fourth angle between the central axis of the air holes 221 in the upper row and the horizontal plane; the third angle and the fourth angle can be equal, or the third angle is greater than the fourth angle, or the third angle is less than the fourth angle; the specific values ​​of the third angle and the fourth angle can be set according to actual needs. Of course, the air holes 221 in the lower row and the middle row can also be straight holes, and the air holes 221 in the upper row can be tilted.

[0074] The distribution of the air holes 221 in the side diffusion plate 220 is not limited to the above example, and can be specifically arranged according to actual needs.

[0075] In this embodiment, the number and / or diameter of the pores 221 in the first region 220a is positively correlated with the supply amount of the first process gas, and the number and / or diameter of the pores 221 in the second region 220b is positively correlated with the supply amount of the second process gas.

[0076] The gas amount of the first process gas and the gas amount of the second process gas may be the same or different. For example, in some embodiments, the consumption of the first process gas is greater than the consumption of the second process gas when processing the semiconductor workpiece 300, so the gas amount of the first process gas is adjusted to be greater than the gas amount of the second process gas.

[0077] In some examples, in order to improve flexibility, the reaction chamber may also be provided with a control valve. In this embodiment, the flow rate of the first process gas may be controlled by the control valve corresponding to the first process gas to adjust the gas volume of the first process gas; the flow rate of the second process gas may be controlled by the control valve corresponding to the second process gas to adjust the gas volume of the second process gas.

[0078] In some examples, in order to improve flexibility, the reaction chamber may also be provided with a baffle, which may be located on the outside or inside of the side diffusion plate 220. The baffle is connected to a driving mechanism, which drives the baffle to move to adjust the position of the baffle so that the baffle can cover at least part of the pores 221 or open each pore 221.

[0079] Among them, the baffle can be set at the avoidance hole corresponding to the air hole 221 in the side diffusion plate 220; when each air hole 221 is opened, the avoidance hole can correspond to the corresponding air hole 221, at this time, the gas volume of the first process gas can reach the maximum; when the baffle blocks the air hole 221, the part of the baffle located between the two avoidance holes corresponds to a part of the air hole 221, so as to reduce the first process gas passing through the air hole 221 and reduce the gas volume of the first process gas.

[0080] The driving mechanism may include a driving motor and a lead screw nut assembly, and the driving motor drives the baffle to move through the lead screw nut assembly. The baffle may move vertically or horizontally, as long as the baffle can switch between a position of blocking the air hole 221 and a position of opening the air hole 221.

[0081] For example, a baffle and a driving mechanism may be provided in the first sub-chamber 110. When the gas volume of the first process gas needs to be reduced, the baffle may be driven to move by the driving mechanism so that the baffle can cover at least part of the gas holes 221 located in the first area 220a. For another example, a baffle and a driving mechanism may be provided in the second sub-chamber 120. When the gas volume of the second process gas needs to be reduced, the baffle may be driven to move by the driving mechanism so that the baffle can cover at least part of the gas holes 221 located in the second area 220b.

[0082] In some embodiments, in order to meet process requirements, the side diffusion plate 220 also has a third area located below the second area 220b, and the area near the two opposite edges in the third area may also be provided with pores 221, and the distribution of the pores 221 in this area may be similar to the distribution of the pores 221 in the second area 220b.

[0083] In some embodiments, the side diffusion plate 220 extends laterally along the chamber base 100 , and the lateral dimension of the side diffusion plate 220 is greater than or equal to the diameter of the semiconductor workpiece 300 , which facilitates the process gas evenly diffused through the side diffusion plate 220 to more comprehensively cover the semiconductor workpiece 300 .

[0084] The center plane of the side diffuser plate 220 parallel to the longitudinal direction may coincide with the center plane of the semiconductor workpiece 300 parallel to the longitudinal direction. When the dimension of the side diffuser plate 220 along the transverse direction is larger than the diameter of the semiconductor workpiece 300, the difference between the dimension of the side diffuser plate 220 along the transverse direction and the diameter of the semiconductor workpiece 300 may be relatively small, for example, the difference between the dimension of the side diffuser plate 220 along the transverse direction and the diameter of the semiconductor workpiece 300 is less than or equal to a threshold value, so as to save process gas.

[0085] Optionally, the side diffusion plate 220 has two edges that are opposite to each other in the transverse direction. In the direction toward the central axis of the chamber base 100, the side diffusion plate 220 has two edges that are spaced apart in the transverse direction, and the air holes 221 close to the two edges are inclined in opposite directions, which is beneficial for the process gas that is evenly diffused through the side diffusion plate 220 to cover the semiconductor workpiece 300 more comprehensively.

[0086] The diameter of the air holes 221 near the two opposite edges may be smaller than the diameter of the other air holes 221. The specific value of the diameter of each air hole 221 can be set according to actual needs, and this embodiment is not limited here.

[0087] In other embodiments, when the lateral dimension of the side diffusion plate 220 is larger than the diameter of the semiconductor workpiece 300, the difference between the lateral dimension of the side diffusion plate 220 and the diameter of the semiconductor workpiece 300 may be relatively large. For example, when the difference between the lateral dimension of the side diffusion plate 220 and the diameter of the semiconductor workpiece 300 is larger than a third threshold, the side diffusion plate 220 has two edges spaced apart in the lateral direction, and the air holes 221 of the side diffusion plate 220 close to the two edges are inclined in opposite directions, which is beneficial to guiding the process gas to flow toward the semiconductor workpiece 300.

[0088] In some embodiments, the reaction chamber may further include an auxiliary gas supply device, the auxiliary gas outlet port of which is located in the first sub-chamber 110 to supply a third process gas to the area near the edge of the first surface of the semiconductor workpiece 300. The supplemented third process gas may be the same as the first process gas, or the third process gas may include a combination of one or more components of the first process gas.

[0089] Optionally, the auxiliary air outlet end of the auxiliary air supply device is positioned at a midpoint between the air inlet side 100a and the air outlet side 100b in the longitudinal direction.

[0090] In some embodiments, the reaction chamber may further include an air flotation device to control at least one of the rotation direction, rotation speed and suspension height of the semiconductor workpiece 300 by using the gas flowing out of the air flotation device. At least part of the air flotation device is located in the second sub-chamber 120. Exemplarily, the air flotation device may include a plurality of air flotation blocks, which are located in the second sub-chamber 120, and each of which is connected to the air inlet branch. The gas flowing out of a part of the air flotation blocks acts on the second surface of the semiconductor workpiece 300 to adjust the suspension height of the semiconductor workpiece 300, or to keep the semiconductor workpiece 300 at the current height. The gas flowing out of another part of the air flotation blocks is used to control the rotation direction or rotation speed of the semiconductor workpiece 300; wherein, the gas flowing out of at least one air flotation block is used to cause the semiconductor workpiece 300 to rotate clockwise, and the gas flowing out of at least one air flotation block is used to cause the semiconductor workpiece 300 to rotate counterclockwise. By controlling the amount of gas flowing out of the above-mentioned air flotation blocks, the rotation direction or rotation speed can be adjusted.

[0091] Other structures of the reaction chamber in the above embodiment may adopt various technical solutions known to ordinary technicians in this field now and in the future, and will not be described in detail here.

[0092] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0093] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0094] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0095] In the present disclosure, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0096] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0097] The above is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A reaction chamber, comprising: A chamber base having a first sub-chamber and a second sub-chamber; The first surface of the semiconductor workpiece is located in the first sub-chamber, and the second surface of the semiconductor workpiece is located in the second sub-chamber; the second surface of the semiconductor workpiece is arranged opposite to the first surface, and the second surface is located below the first surface; A side air intake device, comprising a side air intake plate and a side diffusion plate, wherein the side air intake plate is connected to the air intake side of the chamber base; the side diffusion plate is provided with a plurality of air holes; Wherein, the side diffusion plate has a first area and a second area, the first area is located above the second area; the air holes located in the first area are used to diffuse the first process gas entering the first sub-chamber from the side air intake plate, and the air holes located in the second area are used to diffuse the second process gas entering the second sub-chamber from the side air intake plate.

2. The reaction chamber according to claim 1, wherein: The plurality of pores located in the first region are evenly distributed; And / or, the plurality of pores located in the second region are evenly distributed.

3. The reaction chamber according to claim 1, wherein: in, The area of ​​the first region is greater than or equal to the area of ​​the second region.

4. The reaction chamber according to claim 1, wherein: The number of pores located in the first region is greater than the number of pores located in the second region.

5. The reaction chamber according to claim 1, wherein: The diameter of the pores located in the first region is greater than or equal to the diameter of the pores located in the second region.

6. The reaction chamber according to claim 1, wherein: Among the multiple air holes located in the first area, at least two rows of the air holes are staggered; And / or, among the multiple air holes located in the second area, at least two rows of the air holes are staggered.

7. The reaction chamber according to claim 1, wherein: Among the plurality of air holes located in the first region, a distance between a relatively lower air hole and the first surface of the semiconductor workpiece is less than or equal to a first threshold.

8. The reaction chamber according to claim 1, wherein: The chamber base has an air inlet side and an air outlet side which are opposite to each other in the longitudinal direction; The side diffusion plate extends in a lateral direction of the chamber base, and a dimension of the side diffusion plate in a lateral direction is greater than or equal to a diameter of the semiconductor workpiece.

9. The reaction chamber according to claim 1, further comprising: A partition plate is located in the chamber base and is used to partition the chamber base into a first sub-chamber and a second sub-chamber.

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