Heat dissipation device for power semiconductor

Abstract

The invention relates to a heat radiation device for a power semiconductor, which comprises a power semiconductor module and a heat radiator, the power semiconductor module is inserted into the heat radiator, heat radiation is carried out through the heat radiator, and a metal substrate is welded at the bottom of the power semiconductor module. The bottom surface of the metal substrate is provided with a plurality of uniformly arranged convex PinFin structures, the working surface of the top of the radiator is provided with hollow grooves in one-to-one correspondence with the PinFin structures, and embedded installation between the power semiconductor module and the radiator is realized by inserting each PinFin structure into the corresponding hollow groove. A certain gap is formed between the installed hollow groove and the PinFin structure, the hollow groove and the PinFin structure are connected and fixed through a connecting piece, a heat dissipation structure is arranged on the radiator, heat dissipation is conducted on the power semiconductor module installed on the radiator through the heat dissipation structure, and it is guaranteed that the product performance of the power semiconductor module is stable. The device has the advantages of simple and reasonable structure, practicability, convenience and the like.

Description

Technical Field

[0001] The invention belongs to the technical field of power semiconductor heat dissipation, and relates to a heat dissipation device for a power semiconductor. Background Art

[0002] Power semiconductor modules are products that package semiconductor chips and electronic components together, and are easy to install and highly reliable. This product consumes power and generates heat when it is working, so the power semiconductor module needs to be installed on a heat sink in the system to provide a good heat dissipation path for the device, so as to better exert the performance of the product.

[0003] At present, liquid cooling or air cooling solutions are usually used in the design of heat dissipation systems. In the indirect air cooling or liquid cooling heat dissipation solution, heat dissipation materials are applied to the bottom of the module and the surface of the radiator to improve the heat dissipation capacity. However, in some practical applications, due to the temperature and humidity of the external environment, impurity pollution and other reasons, the heat dissipation material will be lost, dry, and eventually cause device damage and reduced efficiency.

[0004] Therefore, a heat dissipation device for power semiconductor is designed to overcome the above problems. Summary of the invention

[0005] The purpose of the present invention is to overcome the shortcomings of the prior art and to provide a heat dissipation device for power semiconductors which has a simple and reasonable structure, is practical and convenient, has good heat dissipation performance, can provide good heat dissipation for the power module when it is working, and better exert the performance of the product.

[0006] The present invention is implemented through the following technical scheme: a heat dissipation device for power semiconductors, comprising a power semiconductor module and a heat sink, the power semiconductor module is inserted and installed on the heat sink, and heat is dissipated through the heat sink, a metal substrate is welded on the bottom of the power semiconductor module, a plurality of PinFin structures evenly arranged in a convex shape are arranged on the bottom surface of the metal substrate, and hollow grooves corresponding to the PinFin structures are arranged on the working surface at the top of the heat sink, and each PinFin structure is inserted into the corresponding hollow groove to realize the embedded installation between the power semiconductor module and the heat sink, and a certain gap is arranged between the hollow groove and the PinFin structure after installation, the power semiconductor module and the heat sink are connected and fixed by a connecting piece, and a heat dissipation structure is arranged on the heat sink, and the power semiconductor module installed on the heat sink is dissipated by the heat dissipation mechanism, so as to ensure the stable product performance of the power semiconductor module.

[0007] Preferably, the connecting parts are module mounting holes arranged at the four corners of the metal substrate of the power semiconductor module and penetrating the metal substrate, and radiator mounting holes arranged on the working surface at the top of the radiator and corresponding to the module mounting holes. Threads are arranged in both the module mounting holes and the radiator mounting holes. After the PinFin structure of the power semiconductor module is inserted into the hollow groove of the radiator, bolts are inserted into the module mounting holes and the radiator mounting holes in turn to achieve threaded connection and fixation.

[0008] Preferably, the metal substrate is composed of an upper copper layer, a ceramic layer and a lower copper layer arranged in sequence from top to bottom, a thermistor and a chip are soldered to the upper surface of the upper copper layer respectively, and the bottom surface of the lower copper layer is bonded to the metal substrate.

[0009] Preferably, the heat dissipation structure is composed of a thermally conductive material and a plurality of evenly distributed grooves arranged at the bottom of the heat sink, the grooves are used to increase the heat dissipation area, and the thermally conductive material is filled in the gap between the PinFin structure and the hollow grooves.

[0010] Preferably, the groove is in an elongated strip structure, and each elongated strip groove forms a sparse structure at the bottom of the heat sink, which is used to cooperate with air cooling or liquid cooling medium to take away the heat generated by the power semiconductor module during operation.

[0011] Preferably, the groove is in a cylindrical structure, and is used to cooperate with air cooling or liquid cooling medium to take away the heat generated by the power semiconductor module during operation.

[0012] Preferably, the thermally conductive material is thermally conductive adhesive.

[0013] Preferably, the protruding PinFin structure is a cylindrical structure, and the hollow groove is a cylindrical, elliptical or square structure.

[0014] The beneficial effects of the present invention are as follows: The heat dissipation device for power semiconductors designed in the present invention slows down the loss of heat dissipation materials through a new heat sink design structure scheme, prolongs the field operation life, and improves the heat dissipation efficiency of the power semiconductor module. The heat dissipation structure of the present invention increases the heat dissipation area of ​​the power semiconductor module, and the overall embedded matching method effectively prevents the loss of heat dissipation materials, providing a guarantee for the long-term reliable operation of the power semiconductor module. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the structure of the power semiconductor module and the heat sink in the present invention (uninstalled); Figure 2 It is a schematic diagram of the structure of the power semiconductor module in the present invention; Figure 3It is a cross-sectional view of the power semiconductor module and the heat sink after installation in the present invention; Figure 4 for Figure 3 A partial enlarged view of Figure 5 It is a structural schematic diagram of the radiator in the present invention. DETAILED DESCRIPTION

[0016] In order to enable those skilled in the art to more clearly understand the objectives, technical solutions and advantages of the present invention, the present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0017] In the description of the present invention, it is necessary to understand that the orientation or position relationship indicated by the terms such as "up", "down", "left", "right", "inside", "outside", "horizontal" and "vertical" is based on the orientation or position relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention, rather than indicating or implying that the device or element referred to must have a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0018] The present invention will be described in detail below with reference to the accompanying drawings: Figure 1-2 As shown, a heat dissipation device for power semiconductors includes a power semiconductor module 1 and a heat sink 2. The power semiconductor module 1 is inserted and installed on the heat sink 2, and heat is dissipated through the heat sink 2. A metal substrate 3 is welded on the bottom of the power semiconductor module 1, and a plurality of PinFin structures 4 that are evenly arranged and convex are arranged on the bottom surface of the metal substrate 3. A hollow groove 6 corresponding to the PinFin structure is arranged on the working surface 5 on the top of the heat sink 2. Each PinFin structure 4 is inserted into the corresponding hollow groove 6 to achieve the embedded installation between the power semiconductor module 1 and the heat sink 2, and a certain gap 7 is arranged between the hollow groove 6 and the PinFin structure 4 after installation. The heat sink 2 and the power semiconductor module 1 are also connected and fixed by a connecting piece. A heat dissipation structure is arranged on the heat sink 2, and the power semiconductor module 1 installed on the heat sink 2 is dissipated by the heat dissipation mechanism to ensure the stable product performance of the power semiconductor module 1.

[0019] Of course, the power semiconductor module can also be locked onto the heat sink by welding.

[0020] The metal substrate 3 is composed of an upper copper layer 12, a ceramic layer 13 and a lower copper layer 14 arranged in sequence from top to bottom. The thermistor 15 and the chip 16 are respectively soldered to the upper surface of the upper copper layer 12 by solder, and the bottom surface of the lower copper layer 14 is bonded to the metal substrate 3.

[0021] like Figure 3-5As shown, the connecting parts are module mounting holes 8 arranged at the four corners of the metal substrate 3 of the power semiconductor module and penetrating the metal substrate, and radiator mounting holes 9 arranged on the working surface 5 on the top of the radiator 2 and corresponding to the module mounting holes 8. Threads are arranged in the module mounting holes 8 and the radiator mounting holes 9. After the PinFin structure 4 of the power semiconductor module 1 is inserted into the hollow groove 6 of the radiator 2, bolts are inserted into the module mounting holes 8 and the radiator mounting holes 9 in turn to achieve threaded connection and fixation.

[0022] The heat dissipation structure 2 is composed of a heat conducting material 11 and a plurality of evenly distributed grooves 10 arranged at the bottom of the heat sink. The grooves 10 are used to increase the heat dissipation area. The heat conducting material 11 is filled in the gap 7 between the PinFin structure and the hollow groove.

[0023] The groove 10 can be in a long strip structure, and each long strip groove 10 forms a sparse structure at the bottom of the heat sink 2, which is used to cooperate with air cooling or liquid cooling to remove the heat generated by the power semiconductor module during operation. The groove 10 can also be in a cylindrical structure, which is used to cooperate with air cooling or liquid cooling to remove the heat generated by the power semiconductor module during operation.

[0024] Of course, the grooves are not limited to long strip structures and cylindrical structures, and can be formed to meet actual needs.

[0025] The heat conductive material 11 is a heat conductive adhesive or other material with heat dissipation performance. The protruding PinFin structure 4 is a cylindrical structure and can be changed to other shapes according to actual conditions. The hollow groove 6 is cylindrical, elliptical or square, etc., without any limitation, as long as it meets actual requirements.

[0026] The heat dissipation device for power semiconductors designed in the present invention slows down the loss of heat dissipation materials through a new heat sink design structure scheme, prolongs the field operation life, and improves the heat dissipation efficiency of the power semiconductor module. The heat dissipation structure of the present invention increases the heat dissipation area of ​​the power semiconductor module, and the overall embedded matching method effectively prevents the loss of heat dissipation materials, providing a guarantee for the long-term reliable operation of the power semiconductor module.

[0027] The specific embodiments described herein are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A heat dissipation device for a power semiconductor, comprising a power semiconductor module (1) and a heat sink (2), wherein the power semiconductor module (1) is inserted and mounted on the heat sink (2), and heat is dissipated through the heat sink (2), characterized in that: A metal substrate (3) is welded to the bottom of the power semiconductor module (1), and a plurality of evenly arranged convex PinFin structures (4) are provided on the bottom surface of the metal substrate (3). A hollow groove (6) corresponding to the PinFin structure is provided on the working surface (5) at the top of the heat sink (2). Each PinFin structure (4) is inserted into the corresponding hollow groove (6) to achieve the embedded installation between the power semiconductor module (1) and the heat sink (2). After installation, a certain gap (7) is provided between the hollow groove (6) and the PinFin structure (4). The heat sink (2) and the power semiconductor module (1) are also connected and fixed by a connecting piece. A heat dissipation structure is provided on the heat sink (2). The heat dissipation mechanism is used to dissipate heat from the power semiconductor module (1) installed on the heat sink (2), thereby ensuring stable product performance of the power semiconductor module (1).

2. The heat dissipation device for power semiconductor according to claim 1, characterized in that: The connecting parts are module mounting holes (8) arranged at four corners of the metal substrate (3) of the power semiconductor module and penetrating the metal substrate, and radiator mounting holes (9) arranged on the working surface (5) at the top of the radiator (2) and corresponding to the module mounting holes (8). Threads are arranged in the module mounting holes (8) and the radiator mounting holes (9). After the PinFin structure (4) of the power semiconductor module (1) is inserted into the hollow groove (6) of the radiator (2), bolts are inserted into the module mounting holes (8) and the radiator mounting holes (9) in sequence to achieve threaded connection and fixation.

3. The heat dissipation device for power semiconductor according to claim 1 or 2, characterized in that: The metal substrate (3) is composed of an upper copper layer (12), a ceramic layer (13) and a lower copper layer (14) which are arranged in sequence from top to bottom, a thermistor (15) and a chip (16) are respectively soldered to the upper surface of the upper copper layer (12) by means of solder, and the bottom surface of the lower copper layer (14) is bonded to the metal substrate (3).

4. The heat dissipation device for power semiconductor according to claim 1 or 2, characterized in that: The heat dissipation structure (2) is composed of a heat conducting material (11) and a plurality of evenly distributed grooves (10) arranged at the bottom of the heat sink, the grooves (10) being used to increase the heat dissipation area, and the heat conducting material (11) is filled in the gap (7) between the PinFin structure and the hollow grooves.

5. The heat dissipation device for power semiconductor according to claim 4, characterized in that: The grooves (10) are in the form of elongated strips, and each elongated strip of grooves (10) enables the bottom of the heat sink (2) to form a sparse structure, which is used to cooperate with air cooling or liquid cooling cooling media to remove heat generated during operation of the power semiconductor module.

6. The heat dissipation device for power semiconductor according to claim 4, characterized in that: The groove (10) is in a cylindrical structure and is used to cooperate with air cooling or liquid cooling cooling medium to remove heat generated during operation of the power semiconductor module.

7. The heat dissipation device for power semiconductor according to claim 4, characterized in that: The heat-conducting material (11) is heat-conducting glue.

8. The heat dissipation device for power semiconductor according to claim 1 or 7, characterized in that: The protruding PinFin structure (4) is a cylindrical structure, and the hollow groove (6) is a cylindrical, elliptical or square structure, which is used to cooperate with the cylindrical PinFin structure (4) to improve heat dissipation efficiency.

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