Packaging method and structure

Abstract

The embodiment of the invention discloses a packaging method and structure. The packaging structure provided by the embodiment of the invention comprises a supporting structure, a flange structure, a bonding object, at least one wafer and a pin group, according to the embodiment of the invention, the supporting surface of the supporting structure is obliquely arranged, the flange structure is provided with the oblique bottom surface which is complementary with the supporting surface, and the supporting surface of the supporting structure is combined with the bottom of the flange structure by utilizing the combination object, so that the gravity of the flange structure can be decomposed into a force which is vertically applied to the supporting surface; and furthermore, gas holes generated in the conjugate are automatically discharged under the action of the lift force and the force vertically applied to the supporting surface, so that the connection quality between the supporting structure and the flange structure can be improved, and the radio frequency performance and the consistency in scale production are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic packaging, and in particular to a packaging method and structure. Background Art

[0002] At present, in 3G / 4G / 5G wireless communication high-power macro base stations (Macro Remote Radio Unit, MacroRRU) or military and civilian high-power radars, RF components, such as RF power amplifiers (RF poweramplifiers, PA) or RF low-noise amplifiers (Low Noise Amplifiers, LNA), are usually fixed in the support structure to play the role of electrical grounding and heat conduction. However, when the RF component is fixed in the support structure, a certain proportion of gas cavities usually exist inside the combination used to combine the flange structure (that is, the structure used to carry the RF chip in the RF component) with the support structure, and the position of the RF component will also show slight random fluctuations within a certain range. In the actual working process of the RF component, the presence of these gas cavities will cause the thermal resistance of the flange structure and the support structure to increase sharply, thereby causing the performance of the RF component to deteriorate, and even, under extreme working conditions such as high temperature, the RF chip of the RF component will be burned. The fluctuation of the position of the RF component, for example, the RF component is far away from the input end or the output end, will also cause the performance of the RF component to deteriorate, and affect the indicators and production consistency of the whole system. Summary of the invention

[0003] In view of this, the purpose of the present invention is to provide a packaging method and structure so that the gas voids generated inside the combination can be automatically discharged, thereby improving the connection quality between the support structure and the flange structure, and improving the consistency of RF performance and large-scale production.

[0004] In a first aspect, an embodiment of the present invention provides a packaging structure, the packaging structure comprising:

[0005] A supporting structure having a supporting surface, wherein the supporting surface is inclined;

[0006] A flange structure, disposed on the support surface and comprising an inclined bottom surface complementary to the support surface;

[0007] A bonding object, located between the supporting surface and the flange structure, and used to bond the bottom of the flange structure to the supporting surface;

[0008] at least one wafer, located on the upper surface of the flange structure;

[0009] The pin group is connected to the chip through a metal connection structure to lead out the electrode of the chip.

[0010] In some embodiments, the cross-section of the flange structure is trapezoidal, and the flange structure includes a third side wall and a fourth side wall arranged opposite to each other, the third side wall and the fourth side wall are both connected to the bottom surface, the length of the third side wall is greater than the length of the fourth side wall, and the input end or the output end of the chip is located at one end of the third side wall.

[0011] In some embodiments, the chip is a radio frequency power amplifier chip, and an output end of the radio frequency power amplifier chip is located at one end of the third side wall.

[0012] In some embodiments, the chip is a radio frequency low noise amplifier chip, and an input end of the radio frequency low noise amplifier chip is located at one end of the third side wall.

[0013] In some embodiments, the support structure includes a groove, the groove is defined by a bottom structure and a sidewall structure, and the upper surface of the bottom structure is the support surface.

[0014] In some embodiments, the cross-section of the groove is trapezoidal, and the sidewall structure includes a first sidewall and a second sidewall that are oppositely arranged, the first sidewall and the second sidewall are both connected to the bottom structure, and between the first sidewall and the second sidewall, along the vertical direction, the length of the first sidewall is greater than the length of the second sidewall.

[0015] In some embodiments, the cross-section of the groove is triangular, and the sidewall structure includes a fifth sidewall, and the fifth sidewall is connected to the bottom structure.

[0016] In some embodiments, the bottom surface of the flange structure is arranged parallel to the upper surface of the bottom structure.

[0017] In some embodiments, the packaging structure further includes:

[0018] The peripheral structure has an opening, the support structure is arranged in the opening, and at least part of the pins are arranged on the upper surface of the peripheral structure.

[0019] In some embodiments, an upper surface of the sidewall structure is flush with an upper surface of the peripheral structure.

[0020] In some embodiments, the packaging structure further includes:

[0021] The peripheral structure has an opening, the support structure is arranged at the bottom of the peripheral structure, the opening is used to expose the groove, and at least part of the pins are arranged on the upper surface of the peripheral structure.

[0022] In some embodiments, an upper surface of the sidewall structure contacts a lower surface of the peripheral structure.

[0023] In some embodiments, the packaging structure further includes:

[0024] The peripheral structure has an opening, the support structure is arranged in the opening, the upper surface of the support structure is the support surface, and at least part of the pins are arranged on the upper surface of the peripheral structure.

[0025] In some embodiments, the top end of the support surface has the same height as the upper surface of the peripheral structure.

[0026] In some embodiments, the binder is silver colloid or a metal solder in a liquid state.

[0027] In some embodiments, the flange structure is made of copper or an alloy material containing copper.

[0028] In some embodiments, the packaging structure further includes:

[0029] The flange packaging structure is used to encapsulate the chip.

[0030] In some embodiments, the flange packaging structure is a ceramic shell with a hollow interior, or a plastic shell with a hollow interior, or a structure made of injection molding material and coated on the outside of the chip.

[0031] In some embodiments, the inclination angle between the bottom surface of the flange structure and the third side wall ranges from 60° to 80°.

[0032] In a second aspect, an embodiment of the present invention provides a packaging method, the packaging method comprising:

[0033] Providing a support structure, wherein the support structure has a support surface, and the support surface is arranged in an inclined manner;

[0034] A radio frequency component is provided, the radio frequency component comprising a flange structure, at least one chip and a pin group, the flange structure is arranged on the support surface and comprises an inclined bottom surface complementary to the support surface, the chip is located on the upper surface of the flange structure, and the pin group is connected to the chip through a metal connection structure to lead out the electrode of the chip;

[0035] A bonding object is provided, which is located between the supporting surface and the flange structure and is used to bond the bottom of the flange structure to the supporting surface.

[0036] The packaging structure of the embodiment of the present invention includes a support structure, a flange structure, a binder, at least one chip and a pin group. The embodiment of the present invention tilts the support surface of the support structure, and sets a tilted bottom surface complementary to the support surface for the flange structure, and then uses a binder to combine the support surface of the support structure with the bottom of the flange structure, thereby making the gravity of the flange structure decompose into a force applied vertically on the support surface and a force that causes the flange structure to slide down along the support surface, and then the gas cavities generated inside the binder are automatically discharged under the action of the lift and the force applied vertically on the support surface, and the gap distance between the flange structure and the support structure in the direction of the output end or the input end is shortened under the action of the force that causes the flange structure to slide down along the support surface, thereby improving the connection quality between the support structure and the flange structure, and improving the consistency of the RF performance and mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The above and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0038] Figure 1 A schematic diagram of a packaging structure of a related technology;

[0039] Figure 2 It is a three-dimensional schematic diagram of the packaging structure of an embodiment of the present invention without the packaging shell;

[0040] Figure 3 is a cross-sectional schematic diagram of a packaging structure according to an embodiment of the present invention;

[0041] Figure 4 is a cross-sectional schematic diagram of another packaging structure according to an embodiment of the present invention;

[0042] Figure 5 is a cross-sectional schematic diagram of another packaging structure according to an embodiment of the present invention;

[0043] Figure 6 is a cross-sectional schematic diagram of another packaging structure according to an embodiment of the present invention;

[0044] Figure 7 The figure is a flow chart of a packaging method according to an embodiment of the present invention. DETAILED DESCRIPTION

[0045] The present application is described below based on embodiments, but the present application is not limited to these embodiments. In the detailed description of the present application below, some specific details are described in detail. It is possible for those skilled in the art to fully understand the present application without the description of these details. In order to avoid confusing the essence of the present application, known methods, processes, flows, components and circuits are not described in detail.

[0046] In addition, persons of ordinary skill in the art will appreciate that the drawings provided herein are for illustration purposes and are not necessarily drawn to scale.

[0047] Unless otherwise clearly defined and specified, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0048] For ease of explanation, spatially relative terms such as "inside", "outside", "below", "below", "lower", "above", "upper", etc. are used herein to describe the relationship of one element or feature illustrated in the figures to another element or feature. It will be understood that spatially relative terms may be intended to include different orientations of the device in use or operation other than the orientation depicted in the figures. For example, if the device in the figure is turned over, an element described as being "below" or "below" other elements or features will then be positioned as being "above" the other elements or features. Thus, the example term "below" can include both the orientations of above and below. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0049] Unless the context clearly requires otherwise, the words "include", "comprising" and similar words throughout the application should be interpreted as including rather than exclusive or exhaustive; that is, the meaning is "including but not limited to".

[0050] In the description of this application, it should be understood that the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. In addition, in the description of this application, unless otherwise specified, the meaning of "plurality" is two or more.

[0051] Figure 1 FIG. 1 is a schematic diagram of a packaging structure of a related art. Figure 1As shown, the RF component 11 can be fixed in the support structure 12. When the RF component 11 is fixed in the support structure 12, a certain proportion of gas cavities 14 usually exist inside the combination 13 used to combine the flange structure 111 with the support structure 12. In the actual operation of the RF component 11, the presence of these gas cavities 14 will cause the thermal resistance of the flange structure 111 and the support structure 12 to increase sharply at the junction, thereby causing the performance of the RF component 11 to deteriorate, and even, under extreme conditions such as high temperature, the RF chip 112 (that is, RF Power Transistor) of the RF component 11 will be burned.

[0052] Here, the RF component 11 is taken as an RF power amplifier as an example to illustrate the impact caused by the sharp increase in thermal resistance at the joint of the flange structure 111 and the support structure 12. Specifically, the sharp increase in thermal resistance at the joint of the flange structure 111 and the support structure 12 will cause the temperature of the RF power amplifier die (Active Die) of the RF power amplifier to rise, and lead to problems such as a decrease in the output power (Output power, Pout) and efficiency (Drain Efficiency) of the power amplifier and a decrease in the mean time to failure (Mean Time To Failure, MTTF).

[0053] In order to solve the above problems, in the related art, when fixing the RF component 11 in the support structure 12, a specific power amplifier welding fixture 15 is usually used to apply a vertical downward force (such as Figure 1 As shown by the arrow F in the figure, the arrow F indicates the direction of the force) to force the gas cavity 14 to be discharged. However, the package sizes of RF power amplifier tubes of different power levels from the same manufacturer or the same power level from different manufacturers will be different. This requires the design and customization of a special power amplifier welding fixture in each specific project. In the process of designing the power amplifier welding fixture, the weight and shape of the fixture generally require several rounds of design adjustments, and a large amount of welding experimental work is required to ensure the consistency of the RF power amplifier indicators during large-scale production and to ensure that the overall machine indicators have a high yield. Once the fixture is not designed or placed properly, inappropriate pressure and thrust will occur, causing the binder 13 to overflow, thereby short-circuiting the output pin of the power amplifier tube, causing calibration failure, and even burning of the drain of the power amplifier tube.

[0054] In this regard, the present invention provides a packaging structure. When the support surface of the support structure is combined with the bottom of the flange structure by using a binder, the gas voids generated inside the binder are automatically discharged, thereby improving the connection quality between the support structure and the flange structure after the packaging structure is formed, and improving the consistency of radio frequency performance and mass production.

[0055] Figure 2 It is a three-dimensional schematic diagram of the packaging structure of an embodiment of the present invention without the packaging shell, Figure 3 FIG. 1 is a cross-sectional schematic diagram of a packaging structure of an embodiment of the present invention. It should be understood that Figure 3 The cross-sectional view of the package structure shown can be obtained by Figure 2 The three-dimensional packaging structure shown is obtained by cutting along the direction indicated by the dotted line AA'.

[0056] See also Figure 2 and Figure 3 , the packaging structure may include at least a support structure 21, a flange structure 22, a binder 23, a chip 24 and a pin group 25. The flange structure 22, the chip 24 and the pin group 25 may together constitute the RF component in this embodiment (the RF component may also include a flange packaging structure 26 to be described later). The RF component may be an electronic component or module for realizing related RF functions. Optionally, in this embodiment, the RF component may specifically be a RF power amplifier or a RF low noise amplifier.

[0057] Specifically, the support structure 21 is used to assemble the RF component to the peripheral structure 27, and plays the role of electrical grounding and heat conduction. Optionally, the peripheral structure 27 can be at least one layer of circuit board. As a result, the pins of the RF component can be contacted through the copper clad layer on the circuit board. In other embodiments, the present application does not impose specific restrictions on the specific structure of the peripheral structure 27. The support structure 21 may have a support surface 211. The support structure 21 can carry and fix the flange structure 22 of the RF component through the support surface 211 while being fixed to the peripheral structure 27. It is hoped that compared with the related art, in this embodiment, the support surface 211 is arranged at an angle.

[0058] Further, Figure 3 , an implementation of the support structure is shown in the figure, in which a groove may be formed on the support structure 21. The groove may be defined by a bottom structure 214 and a side wall structure. The support surface 211 may specifically be the upper surface of the bottom structure 214. Furthermore, the cross section of the groove may be trapezoidal. The side wall structure may specifically include a first side wall 212 and a second side wall 213 that are arranged opposite to each other. The first side wall 212 and the second side wall 213 are both connected to the bottom structure 214. Between the first side wall 212 and the second side wall 213, along the vertical direction, the length of the first side wall 212 is greater than the length of the second side wall 213. It should be understood that in some embodiments, the cross section of the groove of the support structure may also be triangular, or the support structure may not be directly provided with a groove, but the entire upper surface may be directly used as the support surface.

[0059] Optionally, the support structure 21 may be directly formed on the peripheral structure 27 using an integrated molding process, or may be manufactured separately and then connected and fixed (the fixing method may be welding or gluing) to the peripheral structure 27, and the present application does not impose any restrictions on this.

[0060] It should be understood that Figure 3 A connection method between a support structure and a peripheral structure is shown in FIG. 2 , in which the peripheral structure 27 may have an opening. The support structure 21 may be arranged inside the opening. Further, the upper surface of the side wall structure of the support structure 21 may be flush with the upper surface of the peripheral structure 27, or, in some embodiments, the upper surface of the side wall structure of the support structure may also be lower than the upper surface of the peripheral structure. Furthermore, the upper surface of the peripheral structure may be used to set at least part of the pins in the pin group 25. It should be understood that in some embodiments, the support structure may also be arranged at the bottom of the peripheral structure.

[0061] Optionally, the support structure 21 can be made of metal with high thermal conductivity, such as copper or an alloy material containing copper. Thus, this embodiment can ensure that the support structure 21 can play a good role in electrical grounding and heat dissipation conduction.

[0062] The flange structure 22 is used to carry the RF chip, that is, the wafer 24. At the same time, the flange structure 22 is used to cooperate with the support structure 21 to assemble the RF component to the peripheral structure 27. Specifically, the flange structure 22 can place and fix itself on the support surface 211 of the support structure while carrying and fixing the wafer 24 on the upper surface, so that the flange structure 22 can assemble the RF component into the peripheral structure 27. It is hoped that compared with the related art, in this embodiment, the flange structure 22 can have an inclined bottom surface 221 that is complementary to the support surface 211 of the support structure 21 (that is, the inclination direction and inclination angle are the same).

[0063] Optionally, in this embodiment, the cross-section of the flange structure 22 may be trapezoidal, and the flange structure 22 may include a third side wall 222 and a fourth side wall 223 that are relatively arranged, and the third side wall 222 and the fourth side wall 223 are both connected to the bottom surface 221, and the length of the third side wall 222 is greater than the length of the fourth side wall 223. Further, according to the type of RF chip in the currently assembled RF component, the output end or input end of the chip may be set to be located at one end of the third side wall 222. It should be understood that the specific method of determining the output end position or input end position of the chip according to the type of RF chip will be uniformly explained in subsequent parts, and will not be elaborated here. Further optionally, the inclination angle between the bottom surface 221 of the flange structure and the third side wall 222 (such as Figure 3 The angle α shown in FIG. 1 ) ranges from 60° to 80°.

[0064] Further, Figure 3 2 shows an implementation of the support structure, in which the cross section of the flange structure 22 may be trapezoidal. It should be understood that in some embodiments, the cross section of the flange structure may also be triangular.

[0065] Optionally, in order to prevent the flange structure 22 from affecting the electrical grounding and heat dissipation conduction effect of the support structure 21, the flange structure 22 can also be made of a metal with high thermal conductivity, such as copper or an alloy material containing copper.

[0066] Optionally, the bottom surface 221 of the flange structure and the support surface 211 of the support structure 21 can be arranged in parallel. Thus, this embodiment can increase the relative area between the bottom surface 221 of the flange structure and the support surface 211 of the support structure 21, thereby further improving the connection quality between the support structure and the flange structure, and improving the consistency of RF performance and mass production.

[0067] The bonding object 23 is formed between the support surface 211 and the flange structure 22, and can be used to bond and fix the bottom of the flange structure 22 to the support surface 211. Furthermore, in this embodiment, the support structure 21 and the flange structure 22 can be bonded by gluing or welding. When the support structure 21 and the flange structure 22 are bonded by gluing, the bonding object 23 can be an adhesive with thermal and electrical conductivity, such as silver glue. When the support structure 21 and the flange structure 22 are bonded by welding, the bonding object 23 can be a metal welding object that is liquid in a molten state and has thermal and electrical conductivity.

[0068] It should be understood that no matter whether the support structure 21 and the flange structure 22 are bonded by gluing or welding, the bond 23 will go through a stage of conversion from liquid to solid. The gas voids inside the bond 23 are formed by the gas that is not discharged in time during the process of conversion of the bond 23 from liquid to solid. It is hoped that, compared with the related art, the present embodiment sets the support surface 211 of the support structure at an angle, and sets an inclined bottom surface 221 complementary to the support surface 211 for the flange structure. When the support surface 211 of the support structure 21 is bonded to the bottom of the flange structure 22 by using the bond 23, the gravity of the flange structure 22 can be decomposed into a force (such as Figure 3 As shown by the arrow F2 in the figure, the arrow F2 indicates the direction of the force), and then the gas voids inside the combination 23 are discharged under the action of lift and the force applied vertically to the supporting surface, thereby improving the connection quality between the supporting structure 21 and the flange structure 22.

[0069] The chip 24 is a core component of the RF component, which may include a RF chip (ie, RF Power Transistor) and a matching circuit adapted to the RF chip.

[0070] Optionally, in order to achieve electrical connection between each other, the chips 24 may be connected via a metal connection structure (ie, metal leads, Bonding Wire).

[0071] Optionally, the radio frequency chip included in the wafer 24 may be a radio frequency power amplifier chip or a radio frequency low noise amplifier chip.

[0072] The pin group 25 is used to lead out the electrodes of the RF chip to establish an electrical connection between the RF chip and the peripheral structure. Specifically, the pin group 25 may include a portion located inside the RF component and a portion extending from the inside of the RF component. Among them, the portion of the pin group 25 located inside the RF component can be connected to each chip 24 through a metal connection structure (i.e., a metal lead). The portion of the pin group 25 extending from the inside of the RF component can be connected to the peripheral structure 27. Specifically, when the peripheral structure 27 is a multi-layer circuit board, the pin group 25 is connected to the corresponding electrical part in the multi-layer circuit board. Thus, the pin group 25 can establish an electrical connection between the RF chip and the peripheral structure 27.

[0073] Optionally, in addition to the above parts, the packaging structure in this embodiment may also include a flange packaging structure 26 (it should be understood that Figure 2In order to show the internal structure of the RF component, part of the flange packaging structure is omitted. The flange packaging structure 26 can be used to encapsulate the chip 24 to protect the chip 24 and the metal leads inside the RF component.

[0074] Optionally, in order to avoid electrical impact on the RF chip, the flange packaging structure 26 can be made of a material with insulating properties, which can be a hollow ceramic shell or a hollow plastic shell or a structure made of injection molding material and coated on the outside of the chip. It should be understood that in addition to protecting the chip 24 and the metal leads inside the RF component, the flange packaging structure 26 is also used to isolate the pin group 25 from the flange structure 22 to avoid short circuit between the pin group 25 and the flange structure 22.

[0075] In order to ensure that the RF components can be placed smoothly in the support structure, the slot size of the support structure is usually a positive tolerance relative to the flange structure size of the RF chip (that is, the slot size of the support structure is generally larger than the flange structure size of the RF chip), which results in a certain gap between the flange structure and the side wall of the support structure (such as Figure 1 The gap Gap in the figure shows that the position of the RF component will fluctuate slightly randomly within a certain range. However, due to their own characteristics, some RF chips are very sensitive to the gap between the flange structure and the side wall of the support structure. Once the gap is too large, the performance of the RF chip will be greatly affected.

[0076] For example, for the RF power amplifier chip, the gap between the third side wall 222 of the flange structure 22 and the first side wall 212 of the support structure 21 at the output end is equivalent to introducing a parasitic inductance, which will increase the RF current return path. Once the gap between the third side wall 222 of the flange structure 22 and the first side wall 212 of the support structure 21 at the output end is too large, the position of the drain output load impedance of the RF power amplifier transistor will be changed, thereby causing the gain, saturated output power, drain efficiency and other indicators of the power amplifier to deteriorate. For another example, for a radio frequency low-noise amplifier chip, the gap between the third side wall 222 of the flange structure 22 and the first side wall 212 of the supporting structure at the input end is equivalent to introducing a parasitic inductance, which will increase the input return path. Once the gap between the third side wall 222 of the flange structure 22 and the first side wall 212 of the supporting structure 21 at the input end is too large, the effect of the input matching network will be disturbed, causing the actual input impedance to deviate from the design value, and further affecting the voltage standing wave ratio, resulting in poor source impedance matching, and causing deterioration of indicators such as input standing wave, noise coefficient and gain.

[0077] At the same time, the random fluctuation of the position of RF components will also cause fluctuations in the overall system indicators during mass production, which will in turn cause the deterioration of indicators such as CPK (Capability Index K).

[0078] In this regard, compared with the related art, this embodiment can adjust the setting position of the output end or input end of the chip to meet the connection requirements of different RF components. That is, the setting position of the output end or input end of the chip of this embodiment can be determined according to the type of RF chip of the currently assembled RF component.

[0079] Specifically, when the support surface of the support structure is inclined and an inclined bottom surface complementary to the support surface is provided for the flange structure, the gravity of the flange structure can decompose a force applied vertically to the support surface and a tendency force to make the flange structure slide down along the support surface (such as Figure 3 As shown by the arrow F1 in the figure, the arrow F1 indicates the direction of the trend force). Under the action of the trend force, the gap between the third side wall 222 of the flange structure 22 and the first side wall 212 of the support structure 21 can be greatly reduced. Therefore, in order to shorten the gap between the third side wall 222 of the flange structure 22 and the first side wall 212 of the support structure 21, and further shorten the parasitic inductance and current return path of the RF output end or the RF input end, the input end or the output end of the chip can be set at one end of the third side wall.

[0080] Furthermore, when the wafer includes a radio frequency power amplifier chip, in order to shorten the gap between the third side wall 222 of the flange structure 22 and the first side wall 212 of the support structure 21, the output end of the wafer can be arranged at one end of the third side wall. Figure 3 As shown, assuming that the wafer 24 includes a radio frequency power amplifier chip, the pin 251 close to one end of the third side wall 222 is an output pin, and the pin 252 close to the end of the fourth side wall 223 is an input pin.

[0081] When the wafer includes a radio frequency low noise amplifier chip, in order to shorten the gap between the flange structure and the side wall of the support structure in the input direction, the input end of the wafer can be arranged at one end of the third side wall. Figure 3 As shown, assuming that the wafer 24 includes a radio frequency low noise amplifier chip, the pin 251 close to one end of the third side wall 222 is an input pin, and the pin 252 close to the end of the fourth side wall 223 is an output pin.

[0082] Therefore, by utilizing a specific flange tilt design, this embodiment can automatically move the position of the RF component to a position that is beneficial to the RF indicators and concentrate it as much as possible, reduce fluctuations, improve the performance of the RF component, and thereby improve the indicators and production consistency of the entire system.

[0083] Optionally, under the premise of ensuring that the support structure has a supporting surface that meets the requirements, the specific implementation of the support structure and the connection between the support structure and the peripheral structure can be designed and adjusted by relevant personnel according to actual needs. Correspondingly, in order to adapt to the adjusted support structure, the implementation of the RF component can also be adaptively adjusted.

[0084] Figure 4 FIG. 2 is a cross-sectional schematic diagram of another packaging structure according to an embodiment of the present invention. Figure 4 As shown, compared to Figure 3 The packaging structure in Figure 4 Correspondingly, in order to adapt to the adjusted support structure 41, the pin group of the RF component is also adjusted. Figure 4 In the packaging structure shown, the cross-section of the groove formed by the support structure 41 is no longer trapezoidal, but triangular. The groove formed by the support structure 41 can also be defined by the bottom structure 411 and the sidewall structure. The sidewall structure includes a fifth sidewall 413, which is connected to the bottom structure 411, wherein the fifth sidewall 413 is located at one end close to the third sidewall 222. The upper surface 412 of the bottom structure 411 can also be used as a support surface for carrying and placing the flange structure. But compared to Figure 3 In the supporting structure shown, the side wall structure of the supporting structure 41 may only include the fifth side wall 413. The fifth side wall 413 is connected to the bottom structure 411.

[0085] Figure 5 FIG. 2 is a cross-sectional schematic diagram of another packaging structure according to an embodiment of the present invention. Figure 5 As shown, compared to Figure 3 The package structure shown, Figure 5 The implementation method of the support structure 51 in the embodiment is adjusted. Correspondingly, in order to adapt to the adjusted support structure 51, the pin group of the RF component is also adjusted. Figure 5 In the package structure shown, Figure 5 The support structure 51 in the embodiment no longer has a groove, but directly sets the entire upper surface 511 in an inclined manner to serve as a support surface for carrying and fixing the flange structure. The top of the upper surface 511 (i.e., the support surface) of the support structure 51 can have the same height as the upper surface of the peripheral structure 52.

[0086] Figure 6 FIG. 2 is a cross-sectional schematic diagram of another packaging structure according to an embodiment of the present invention. Figure 6 As shown, compared to Figure 3 The packaging structure in Figure 6 The connection mode between the support structure 61 and the peripheral structure 62 is adjusted. Correspondingly, in order to adapt to the connection mode between the support structure 61 and the peripheral structure 62 after the adjustment, the flange structure of the RF component is also adjusted. Figure 6 In the packaging structure shown, the peripheral structure 62 also has an opening, but the support structure 61 is not arranged in the opening of the peripheral structure 62, but is attached to the bottom of the peripheral structure 62, and the opening exposes the groove. Further, the upper surface of the sidewall structure of the support structure 61 can contact the lower surface of the peripheral structure.

[0087] It should be understood that the packaging structure given above is for illustration only. In actual application, on the premise of ensuring that the support surface of the support structure and the bottom surface of the flange structure meet the conditions (inclined and complementary), the support structure, the RF component, and the connection method between the support structure and the peripheral structure and other mutual contents can be designed and adjusted by relevant personnel according to actual needs, and this application does not impose any restrictions on this.

[0088] Figure 7 FIG. 1 is a flow chart of a packaging method according to an embodiment of the present invention. Figure 7 As shown, the packaging method of the embodiment of the present invention may specifically include the following steps:

[0089] Step S100: providing a support structure.

[0090] Step S200: providing a radio frequency component.

[0091] Step S300: providing a conjugate.

[0092] Specifically, in step S100, this embodiment may provide a support structure. The support structure may be connected and fixed to the peripheral structure. Optionally, the support structure may be directly formed on the peripheral structure using an integrated molding process, or may be separately manufactured and then connected and fixed to the peripheral structure, and this application does not limit this.

[0093] In step S200, this embodiment can provide a radio frequency component to be assembled. The radio frequency component includes a flange structure, at least one chip and a pin group. The flange structure is arranged on the support surface and includes an inclined bottom surface complementary to the support surface. The chip is located on the upper surface of the flange structure. The pin group is connected to the chip through a metal connection structure to lead out the electrode of the chip.

[0094] In step S300, this embodiment may provide a bonding object between the support surface of the support structure and the flange structure, so as to use the bonding object to bond the support surface of the support structure and the bottom of the flange structure together.

[0095] It should be understood that the present embodiment can combine the support surface of the support structure with the bottom of the flange structure by gluing or welding. Among them, when the present embodiment combines the support surface of the support structure with the bottom of the flange structure by gluing, the combination can be an adhesive with thermal and electrical conductivity, such as silver glue. Optionally, as a forming method, the combination can be formed between the support surface and the flange structure by coating the support surface of the support structure. When the present embodiment combines the support surface of the support structure with the bottom of the flange structure by welding, the combination can be a metal welding material with thermal and electrical conductivity. Optionally, as a forming method, the combination 23 can be formed by first being transplanted onto the support surface of the support structure in the form of a solder sheet and then melting (the melting process can be achieved by reflow soldering).

[0096] It should be understood that no matter the binder is an adhesive or a metal weld, when the binder is used to combine the support surface of the support structure with the bottom of the flange structure, the binder will go through a stage of conversion from liquid to solid. The gas voids existing inside the binder are formed by the gas that is not discharged in time during the process of the binder converting from liquid to solid. In this embodiment, the support surface of the support structure is tilted, and an inclined bottom surface complementary to the support surface is provided for the flange structure. When the support surface of the support structure is combined with the bottom of the flange structure using the binder, the gravity of the flange structure can be decomposed into a force applied vertically on the support surface, and then the gas voids existing inside the binder are actively discharged under the action of lift and the force applied vertically on the support surface, thereby improving the connection quality between the support structure and the flange structure, and improving the consistency of RF performance and large-scale production.

[0097] The packaging structure of the embodiment of the present invention includes a support structure, a flange structure, a binder, at least one chip and a pin group. In the embodiment of the present invention, the support surface of the support structure is tilted, and the flange structure is provided with an inclined bottom surface complementary to the support surface, and then the support surface of the support structure is combined with the bottom of the flange structure by using a binder, thereby, the gravity of the flange structure can be decomposed into a force applied vertically on the support surface, and then the gas cavity generated inside the binder is automatically discharged under the action of the lift and the force applied vertically on the support surface, thereby improving the connection quality between the support structure and the flange structure, and improving the consistency of the RF performance and mass production.

[0098] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A packaging structure, characterized in that: The packaging structure comprises: A supporting structure having a supporting surface, wherein the supporting surface is inclined; A flange structure, disposed on the support surface and comprising an inclined bottom surface complementary to the support surface; A bonding object, located between the supporting surface and the flange structure, and used to bond the bottom of the flange structure to the supporting surface; at least one wafer, located on the upper surface of the flange structure; The pin group is connected to the chip through a metal connection structure to lead out the electrode of the chip.

2. The packaging structure according to claim 1, characterized in that: The cross-section of the flange structure is trapezoidal, and the flange structure includes a third side wall and a fourth side wall that are arranged opposite to each other. The third side wall and the fourth side wall are both connected to the bottom surface. The length of the third side wall is greater than the length of the fourth side wall. The input end or the output end of the chip is located at one end of the third side wall.

3. The packaging structure according to claim 2, characterized in that: The wafer is a radio frequency power amplifier chip, and an output end of the radio frequency power amplifier chip is located at one end of the third side wall.

4. The packaging structure according to claim 2, characterized in that: The wafer is a radio frequency low noise amplifier chip, and an input end of the radio frequency low noise amplifier chip is located at one end of the third side wall.

5. The packaging structure according to claim 1, characterized in that: The supporting structure comprises a groove, which is defined by a bottom structure and a side wall structure, and the upper surface of the bottom structure is the supporting surface.

6. The packaging structure according to claim 5, characterized in that: The cross-section of the groove is trapezoidal, and the sidewall structure includes a first sidewall and a second sidewall that are oppositely arranged, the first sidewall and the second sidewall are both connected to the bottom structure, and between the first sidewall and the second sidewall, along the vertical direction, the length of the first sidewall is greater than the length of the second sidewall.

7. The packaging structure according to claim 5, characterized in that: The cross section of the groove is triangular, and the side wall structure includes a fifth side wall, and the fifth side wall is connected to the bottom structure.

8. The packaging structure according to claim 5, characterized in that: The bottom surface of the flange structure is arranged parallel to the upper surface of the bottom structure.

9. The packaging structure according to claim 5, characterized in that: The packaging structure further includes: The peripheral structure has an opening, the support structure is arranged in the opening, and at least part of the pins are arranged on the upper surface of the peripheral structure.

10. The packaging structure according to claim 9, characterized in that: The upper surface of the sidewall structure is flush with the upper surface of the peripheral structure.

11. The packaging structure according to claim 5, characterized in that: The packaging structure further includes: The peripheral structure has an opening, the support structure is arranged at the bottom of the peripheral structure, the opening is used to expose the groove, and at least part of the pins are arranged on the upper surface of the peripheral structure.

12. The packaging structure according to claim 11, characterized in that: An upper surface of the sidewall structure contacts a lower surface of the peripheral structure.

13. The packaging structure according to claim 1, characterized in that: The packaging structure further includes: The peripheral structure has an opening, the support structure is arranged in the opening, the upper surface of the support structure is the support surface, and at least part of the pins are arranged on the upper surface of the peripheral structure.

14. The packaging structure according to claim 13, characterized in that: The top end of the support surface has the same height as the upper surface of the peripheral structure.

15. The packaging structure according to claim 1, characterized in that: The bonding material is silver glue or a metal solder in a liquid state.

16. The packaging structure according to claim 1, characterized in that: The material of the flange structure is copper or an alloy material containing copper.

17. The packaging structure according to claim 1, characterized in that: The packaging structure further includes: The flange packaging structure is used to encapsulate the chip.

18. The packaging structure according to claim 17, characterized in that: The flange packaging structure is a ceramic shell with a hollow interior, or a plastic shell with a hollow interior, or a structure made of injection molding material and coated on the outside of the chip.

19. The packaging structure according to claim 2, characterized in that: The inclination angle between the bottom surface of the flange structure and the third side wall ranges from 60° to 80°.

20. A packaging method, characterized in that: The packaging method comprises: Providing a support structure, wherein the support structure has a support surface, and the support surface is arranged in an inclined manner; A radio frequency component is provided, the radio frequency component comprising a flange structure, at least one chip and a pin group, the flange structure is arranged on the support surface and comprises an inclined bottom surface complementary to the support surface, the chip is located on the upper surface of the flange structure, and the pin group is connected to the chip through a metal connection structure to lead out the electrode of the chip; A bonding object is provided, which is located between the supporting surface and the flange structure and is used to bond the bottom of the flange structure to the supporting surface.

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