Indium tin oxide (ITO)-based broadband metamaterial wave absorber unit and preparation method thereof

Abstract

The invention provides an ITO-based broadband metamaterial wave absorber unit and a preparation method. The unit comprises a first ITO conductive film layer, a first PET conductive film layer, a first intermediate dielectric plate layer, a second ITO conductive film layer, a second PET conductive film layer, a second intermediate dielectric plate layer and a metal layer which are sequentially arranged from top to bottom. The ITO conducting film layers are square, the first ITO conducting film layer is provided with a first cross-shaped through hole and four third linear through holes, the first cross-shaped through hole penetrates through the four side edges of the first ITO conducting film layer, and the four third linear through holes are located in the four edges of the second square in a one-to-one correspondence mode. Each linear through hole III can penetrate through two adjacent sides of the square I, and an included angle of 45 degrees is formed between the linear through hole III and the side of the ITO conductive film layer; the second ITO conductive film layer is provided with a second cross-shaped through hole covering the diagonal line of the second ITO conductive film layer. The wave absorber unit has the advantages of broadband wave absorption and light and thin structure.

Description

Technical Field

[0001] The present invention relates to the field of metamaterial absorbers, and in particular to an ITO-based broadband metamaterial absorber unit and a preparation method thereof. Background Art

[0002] Metamaterials, as an innovative three-dimensional artificial composite material, exhibit unique electromagnetic response characteristics compared to natural materials. They are composed of basic units that are much smaller than the working wavelength and are precisely arranged in a periodic or non-periodic manner. Through the careful design and optimization of these unit structures, almost arbitrary equivalent electromagnetic parameters can be customized, significantly expanding the flexibility and scope of electromagnetic wave manipulation. This rich library of electromagnetic properties of metamaterials has enabled them to show great potential in realizing cutting-edge applications such as super lenses, electromagnetic invisibility cloaks, and high-efficiency absorbers.

[0003] Metamaterial absorbers, as electromagnetic functional devices that can efficiently convert incident electromagnetic wave energy into heat or other forms of energy, are of great value in reducing radar cross-sections and achieving military stealth. Their absorbing performance is mainly rooted in the resonance mechanism of metal structures, but this characteristic often leads to limited absorbing bandwidth. To overcome this challenge and ensure absorbing performance, researchers usually design multi-resonance structures or adopt multi-layer metal stacking strategies to broaden the absorbing bandwidth in the microwave frequency band. However, this method makes the metamaterial absorber structure too thick, limiting the feasibility of practical applications.

[0004] It can be seen that it is difficult to achieve both broadband wave absorption and a light and thin structure in the prior art. Summary of the invention

[0005] The present invention provides an ITO-based broadband metamaterial absorber unit and a preparation method thereof, which take into account broadband absorption and a light and thin structure, aiming to balance performance and practicality, and promote the metamaterial absorber to move towards a more efficient and convenient application direction.

[0006] According to a first aspect of the present invention, there is provided an ITO-based broadband metamaterial absorber unit, comprising a first ITO conductive film layer, a first PET conductive film layer, a first intermediate dielectric plate layer, a second ITO conductive film layer, a second PET conductive film layer, a second intermediate dielectric plate layer and a metal layer arranged in sequence from top to bottom; the first ITO conductive film layer is in the shape of a square one with a side length of b, the first ITO conductive film layer has a cross-shaped through hole one and four linear through holes three, the cross-shaped through hole one passes through the midpoints of the four sides of the square one; the four linear through holes three are located one by one on the four sides of the square two, the angle between the linear through hole three and the side of the square one is 45°, and the lengths of the four linear through holes are the same and less than Both ends of the linear through hole three in the length direction penetrate the sides of the square one; the shape of the second ITO conductive film layer is square three, and the second ITO conductive film layer has cross-shaped through holes two that can penetrate the four corners of square three.

[0007] Optionally, the first ITO conductive film layer and the first PET conductive film layer constitute a first ITO-PET conductive film layer, the second ITO conductive film layer and the second PET conductive film layer constitute a second ITO-PET conductive film layer, the first ITO-PET conductive film layer is provided with a cross-shaped groove one including the cross-shaped through hole one, the first ITO-PET conductive film layer is provided with a linear groove three including the linear through hole three, and the bottoms of the cross-shaped groove one and the linear groove three are both the first PET conductive film layer; the second ITO-PET conductive film layer is provided with a cross-shaped groove two including the cross-shaped through hole two, and the bottom of the cross-shaped groove two is the second PET conductive film layer.

[0008] Optionally, the side length of the square 2 is equal to the length of the cross-shaped groove 1.

[0009] Optionally, the length of the linear groove three is 9-9.2 mmmm.

[0010] Optionally, the first PET conductive film layer is rectangular, and its length and width are both greater than b, and the distance between the edge of the first ITO conductive film layer and the edge of the first PET conductive film layer is greater than 0.

[0011] Optionally, the first PET conductive film layer is a rectangle whose length and width are both greater than b.

[0012] Optionally, the length and width of the first PET conductive film layer are 13.2-14 mm, 13.2-14 mm, b is 11-11.4 mm, the width of the cross-shaped through hole 1 is 0.2-0.22 mm, and the width of the straight-line through hole 3 is 0.6-0.7 mm.

[0013] Optionally, the side length of the second ITO conductive film layer is 11-11.4 mm, and the width of the second cross-shaped through hole is 0.2-0.25 mm.

[0014] Optionally, the first intermediate dielectric plate layer and the second intermediate dielectric plate layer are both acrylic plates, the thickness of the acrylic plates is 3-3.02 mm, the dielectric constant is 2.25-2.28, and the loss tangent is 0.001-0.002.

[0015] Optionally, the thickness of the metal layer is 0.009-0.01 mm.

[0016] Optionally, the first ITO conductive film layer and the first PET conductive film layer constitute a first ITO-PET conductive film layer, the second ITO conductive film layer and the second PET conductive film layer constitute a second ITO-PET conductive film layer, and the resistance of the first ITO-PET conductive film layer and the second ITO-PET conductive film layer are both 100Ω.

[0017] Optionally, the side length of square 2 is b.

[0018] Optionally, the first PET conductive film layer, the first intermediate dielectric plate layer, the second PET conductive film layer, the second intermediate dielectric plate layer and the metal layer are all square.

[0019] Optionally, the first PET conductive film layer and the second PET conductive film layer have equal side lengths.

[0020] Optionally, the first ITO conductive film layer and the second ITO conductive film layer are both centrally symmetrical patterns.

[0021] Optionally, the pattern of the first ITO conductive film layer and the pattern of the second ITO conductive film layer are both patterns that can overlap with themselves when rotated 90° around the center, and are both patterns that can overlap with themselves when rotated 270° around the center.

[0022] According to a second aspect of the present invention, there is provided a device based on electromagnetic absorption, characterized in that it comprises an ITO-based broadband metamaterial absorber unit involved in the first aspect and its optional solutions.

[0023] Optionally, the device is a communication device, a radar device or a stealth device.

[0024] According to a third aspect of the present invention, there is provided a method for preparing an ITO-based broadband metamaterial absorber unit, comprising:

[0025] Get the metal layer;

[0026] preparing a second intermediate dielectric plate layer on the metal layer;

[0027] Plating a second PET conductive film layer on the second intermediate dielectric layer;

[0028] Plating a second basic ITO conductive film layer on the second PET conductive film layer, wherein the second basic ITO conductive film layer is in a square shape;

[0029] A second cross-shaped through hole is prepared on the second basic ITO conductive film layer to obtain a second ITO conductive film layer, wherein the second cross-shaped through hole can penetrate four corners of the second basic ITO conductive film layer;

[0030] Preparing a first intermediate dielectric plate layer on the second ITO conductive film layer;

[0031] Plating a first PET conductive film layer on the first intermediate dielectric layer;

[0032] Plating a first basic ITO conductive film layer on the first PET conductive film layer, wherein the first basic ITO conductive film layer is in a square shape with a side length of b;

[0033] A cross-shaped through hole 1 and four straight-shaped through holes 3 are prepared on the first basic ITO conductive film layer to obtain a first ITO conductive film layer, wherein the cross-shaped through hole 1 passes through the midpoints of the four sides of the first basic ITO conductive film layer, and the four straight-shaped through holes 3 are located on the four sides of the square 2 in a one-to-one correspondence, and the lengths of the four straight-shaped through holes are the same and less than Both ends of the linear through hole three in the length direction penetrate the edge of the first basic ITO conductive film layer, and the angle between the linear through hole three and the edge of the first basic ITO conductive film layer is 45°.

[0034] According to a fourth aspect of the present invention, there is provided an application of a broadband metamaterial absorber unit prepared by the method for preparing a broadband metamaterial absorber unit based on ITO according to the third aspect as a communication device, a radar device or a stealth device.

[0035] The present invention provides an ITO-based broadband metamaterial absorber unit and a preparation method thereof. Compared with the multi-resonance structure or multi-layer metal stacking strategy of the prior art, the present invention uses a hierarchical structure of a first ITO conductive film layer, a first PET conductive film layer, a first intermediate dielectric plate layer, a second ITO conductive film layer, a second PET conductive film layer, a second intermediate dielectric plate layer and a metal layer arranged in sequence from top to bottom, and a specific structural design of the first ITO conductive film layer and the second ITO conductive film layer, so that the broadband metamaterial absorber unit can achieve broadband absorption in the microwave frequency band, and the thickness of the overall structure is relatively low. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0037] Figure 1 It is a schematic diagram of the cross-sectional structure of a broadband metamaterial absorber unit based on ITO in one embodiment of the present invention;

[0038] Figure 2 is a schematic structural diagram of a first ITO-PET conductive film layer in one embodiment of the present invention;

[0039] Figure 3 is a schematic structural diagram of a second ITO-PET conductive film layer in one embodiment of the present invention;

[0040] Figure 4 A schematic diagram of an absorption frequency band and absorption effect of an ITO-based broadband metamaterial absorber unit in one embodiment of the present invention;

[0041] Figure 5 It is a flow chart of a method for preparing a broadband metamaterial absorber unit based on ITO in one embodiment of the present invention.

[0042] Description of reference numerals:

[0043] 10-first ITO conductive film layer, 11-straight through hole one, 12-straight through hole two, 13-straight through hole three; 20-first PET conductive film layer; 30-first intermediate dielectric plate layer; 40-second ITO conductive film layer, 41-cross-shaped through hole two; 50-second PET conductive film layer; 60-second intermediate dielectric plate layer; 70-metal layer. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] Unless otherwise defined, the technical terms or scientific terms used in this disclosure should be understood by people with ordinary skills in the field to which the invention belongs. The words "first", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. The words "include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0046] The technical solution of the present invention is described in detail with specific embodiments below. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0047] Please refer to Figure 1 , Figure 2 and Figure 3 , the embodiment of the present invention provides a broadband metamaterial absorber unit based on ITO, for the convenience of expression, define Figure 1 The top is up, the left side is left, and the inside is front.

[0048] The ITO-based broadband metamaterial absorber unit comprises:

[0049] Metal layer 70;

[0050] A second intermediate dielectric layer 60 located on the metal layer 70;

[0051] A second PET conductive film layer 50 located on the second intermediate dielectric layer 60;

[0052] A second ITO conductive film layer 40 located on the second PET conductive film layer 50;

[0053] A first intermediate dielectric layer 30 located on the second ITO conductive film layer 40;

[0054] A first PET conductive film layer 20 located on the first intermediate dielectric layer 30;

[0055] The first ITO conductive film layer 10 is located on the first PET conductive film layer 20 .

[0056] The first ITO conductive film layer 10 and the first PET conductive film layer 20 constitute a first ITO-PET conductive film layer.

[0057] The second ITO conductive film layer 40 and the second PET conductive film layer 50 constitute a second ITO-PET conductive film layer.

[0058] The shapes of the first ITO conductive film layer 10 and the second ITO conductive film layer 40 are both squares. The shape of the first ITO conductive film layer 10 in top view is a square, called square one with a side length of b. The shape of the second ITO conductive film layer 40 in top view is a square, called square three.

[0059] Please refer to Figure 2 The first ITO conductive film layer 10 has a cross-shaped through hole 1 and four linear through holes 3 13. The cross-shaped through hole 1 includes a linear through hole 1 11 and a linear through hole 2 12, and the linear through hole 1 11 and the linear through hole 2 12 are perpendicular to each other and intersect. Figure 3 The second ITO conductive film layer 40 has a cross-shaped through hole 41 .

[0060] Please refer again Figure 2 The lengths of the linear through hole 11 and the linear through hole 2 12 are both equal to the side length b of the first ITO conductive film layer 10, and the intersection of the linear through hole 11 and the linear through hole 2 12 is located at the center of the square 1, that is, the center of the cross-shaped through hole 1 coincides with the center of the first ITO conductive film layer 10, and the cross-shaped through hole 1 passes through the upper surface, lower surface, front side, rear side, left side and right side of the first ITO conductive film layer 10.

[0061] Please refer again Figure 2 The four straight through holes 13 are located on the four sides of the square 2 in a one-to-one correspondence, and the lengths of the four straight through holes 13 are the same and less than That is, each linear through hole 3 13 corresponds to and only corresponds to one side of the square 2, and the side length of the square 2 is less than Greater than The angle between the side of square one and the side of square two is 45°. Both ends of the length direction of the linear through hole three 13 penetrate the side of square one, that is, each linear through hole three 13 can and can only penetrate the two sides of square one. Obviously, based on the above-mentioned 45° and the one-to-one corresponding definition on the four sides of square two, the two sides of the square penetrated by different linear through holes three 13 are not the same or not completely the same. In square one, each two adjacent sides correspond to a linear through hole three 13. The four linear through holes three 13 are respectively called the first linear through hole three, the second linear through hole three, the third linear through hole three, and the fourth linear through hole three. The first linear through hole three penetrates the front side and left side of square one, the second linear through hole three penetrates the front side and right side of square one, the third linear through hole three penetrates the right side and rear side of square one, and the fourth linear through hole three penetrates the rear side and left side of square one. It is understandable that the centers of square 1, square 2 and cross-shaped through hole 1 coincide (the centers are located on the same vertical axis). It is understandable that square 2 is only for the convenience of description and the manufacture of linear through hole 3 13, and the shape of any structure is square 2.

[0062] Please refer again Figure 3 The cross-shaped through hole 241 (the cross-shaped through hole on the second ITO conductive film layer 40) covers the diagonal of the second ITO conductive film layer 40, that is, the cross-shaped through hole 241 coincides with the diagonal of the positive direction 3, and the cross-shaped through hole 241 penetrates the four right angles of the square 3 of the second ITO conductive film layer 40. The cross-shaped through hole 241 includes a linear through hole 4 and a linear through hole 5. The linear through hole 4 and the linear through hole 5 are perpendicular and intersecting. The linear through hole 4 penetrates two right angles of the second ITO conductive film layer 40 (two right angles located on one diagonal), and the linear through hole 5 penetrates the other two right angles of the second ITO conductive film layer 40 (two right angles located on another diagonal).

[0063] In a specific solution, the first PET conductive film layer 20 is a rectangle, that is, the shape of the top view is a rectangle, the length and width of the rectangle are both greater than b, the distance between the edge of the first ITO conductive film layer 10 and the edge of the first PET conductive film layer 20 is greater than 0, and each edge of the first ITO conductive film layer 10 does not overlap with the edge of the first PET conductive film layer 20. Usually, the center of the first PET conductive film layer 20 and the center of the first ITO conductive film layer 10 are located on the same vertical axis. Usually, the shape of the first PET conductive film layer 20 is a square with a side length of a.

[0064] In the specific solution, the side length of the second ITO-PET conductive film layer is a. Here, the top view of the second PET conductive film layer 50 is a rectangle, usually a square, and the centers of the second PET conductive film layer 50 and the second ITO conductive film layer 40 are located on the same vertical axis, and the sides are equal. Here, the side length of the second PET conductive film layer 50 is a, the side length of the second ITO conductive film layer 40 is b, and the centers of the second ITO conductive film layer 40 and the second PET conductive film layer 50 are located on the same vertical axis.

[0065] In a specific embodiment, the first PET conductive film layer 20, the first intermediate dielectric plate layer 30, the second PET conductive film layer 50, the second intermediate dielectric plate layer 60 and the metal layer 70 are all square in top view. Specifically, the first PET conductive film layer 20 and the second PET conductive film layer 50 have the same side length.

[0066] It can be understood that the through holes described in this article refer to the through holes that penetrate the upper and lower surfaces of the ITO conductive film layer. The cross-shaped through hole 1 and the straight-line through hole 3 13 penetrate the upper and lower surfaces of the first ITO conductive film layer 10, and the cross-shaped through hole 2 41 penetrates the upper and lower surfaces of the second ITO conductive film layer 40. It can be understood that the straight-line and cross-shaped through holes described in this article are both figures presented in the top view.

[0067] The top view of the first ITO conductive film layer 10 and the second ITO conductive film layer 40 is a central symmetrical pattern. Specifically, the first ITO conductive film layer 10 and the second ITO conductive film layer 40 both have four symmetry axes. The pattern of the first ITO conductive film layer 10 and the pattern of the second ITO conductive film layer 40 are: they can overlap with themselves when rotated (clockwise) around the center by 90°, 180°, and 270°.

[0068] It can be understood that: a cross-shaped groove 1 is dug on the first ITO-PET conductive film layer, and the bottom of the cross-shaped groove 1 is the first PET conductive film layer 20. The cross-shaped groove 1 includes a cross-shaped through hole 1. The cross-shaped groove 1 includes a linear groove 1 and a linear groove 2, which are perpendicular to each other and intersect, and the intersection is the center of the first ITO conductive film layer 10; preferably, the lengths of the linear groove 1 and the linear groove 2 are equal, that is, the length and width of the cross-shaped groove 1 are equal. Four linear grooves 3 are dug on the first ITO-PET conductive film layer, and the linear grooves 3 are located on the four sides of the square 2 in a one-to-one correspondence. The linear grooves 3 include linear through holes 3 13, and the bottom of the linear grooves 3 is the first PET conductive film layer 20. A cross-shaped groove 2 is dug on the second ITO-PET conductive film layer, and the bottom of the cross-shaped groove 2 is the second PET conductive film layer 50. The cross-shaped groove 2 includes a cross-shaped through hole 2 41, and the cross-shaped groove 2 includes a linear groove 4 and a linear groove 5. Generally, the width of all the grooves in this section is not greater than the width of the corresponding through hole, and is only greater than the corresponding through hole in length. As a preferred embodiment, the side length of the square 2 is equal to the length of the linear groove 1. The design that the side length of the square 2 is equal to the length of the linear groove 1 further improves the absorption performance of the absorber unit.

[0069] In a specific embodiment, the first PET conductive film layer 20 is 13.2-14 mm long and 13.2-14 mm wide. Furthermore, the side length of the first PET conductive film layer 20 is 13.2-14 mm; the side length of the first ITO conductive film layer 10 is 11-11.4 mm. The length c of the cross-shaped groove 1 dug out on the first ITO-PET conductive film layer is 12-12.2 mm (the length of the linear groove 1 and the linear groove 2), and the width e is 0.2-0.22 mm (the width of the linear groove 1 and the linear groove 2). It can be understood that such a design is to ensure that the cross-shaped through hole 1 and the linear through hole 2 12 horizontally penetrate the first ITO conductive film layer 10. A part of the PET conductive film layer can be dug out to expose the first PET conductive film layer 20, and the other through holes are the same. The length f of the linear groove three is 9-9.2 mm and the width d is 0.6-0.7 mm; the side length of the second ITO conductive film layer 40 is 11-11.4 mm, the hole width k of the cross-shaped through hole 2 41 on the second ITO conductive film layer 40 is 0.2-0.25 mm (the width of the linear groove four and the linear groove five), and the length g of the cross-shaped groove two is 19-19.2 mm (the length of the linear groove four and the linear groove five). The first intermediate dielectric plate layer 30 and the second intermediate dielectric plate layer 60 are acrylic plates, and the thickness h1 of the first intermediate dielectric plate layer 30 and the second intermediate dielectric plate layer 60 are both 3-3.02 mm, the dielectric constant is 2.25-2.28, and the loss tangent is 0.001-0.002. The thickness h2 of the metal layer 70 used for grounding is 0.009-0.01 mm.

[0070] Further, as a preferred solution, the side length a of the first PET conductive film layer 20 is 13.6 mm, the side length b of the first ITO conductive film layer 10 is 11 mm, the cross-shaped groove c dug out is 12 mm, and the width e is 0.2 mm; the four linear grooves three corresponding to the square two rotated 45 degrees around the center point are: a rectangle with a length f of 9 mm and a width d of 0.6 mm; the side length of the second ITO conductive film is 11 mm, and a cross-shaped groove two rotated 45 degrees around the center point dug out in the second ITO-PET conductive film layer has a groove width k of 0.2 mm, and a length g of the cross-shaped groove two is 19 mm; the thickness of the acrylic board is 3 mm, the dielectric constant is 2.25, and the loss tangent is 0.001; the thickness h2 of the metal layer 70 is 0.01 mm.

[0071] In other preferred embodiments, the side length of the square 2 is equal to the side length of the square 1. The length of the linear through hole 3 13 is approximately By designing that the side length of the square two is equal to the side length of the square one, the absorption performance of the absorber unit is further improved.

[0072] In a specific embodiment, the resistance of the first ITO-PET conductive film layer is 100Ω, and the resistance of the first ITO-PET conductive film layer is 100Ω.

[0073] A broadband metamaterial absorber unit based on ITO provided in any of the above schemes realizes broadband absorption by adopting an ITO conductive film layer, and ensures the absorbing efficiency by sequentially arranging a first ITO conductive film layer 10, a first PET conductive film layer 20, a first intermediate dielectric plate layer 30, a second ITO conductive film layer 40, a second PET conductive film layer 50, a second intermediate dielectric plate layer 60 and a metal layer 70 from top to bottom, and a specific structural design of the first ITO conductive film layer 10 and the second ITO conductive film layer 40, and can also realize broadband absorption of the absorber unit in the frequency range of 3.9GHz-12GHz. Compared with the multi-resonance structure or the multi-layer metal stacking strategy of the prior art, the overall structure of the absorber unit designed based on the ITO conductive film layer has only two ITO-PET-intermediate dielectric structures, so that the absorption intensity is not lower than that of the prior art while the overall thickness is lower. The broadband metamaterial absorber unit has a simple structure and is easy to process and prepare. The broadband metamaterial absorber unit based on ITO in this embodiment has a high absorption intensity in the microwave frequency band, a lighter and simpler structure, and promotes the metamaterial absorber to move towards a more efficient and convenient application direction.

[0074] Please refer to Figure 4 , a schematic diagram of the microwave frequency band absorption effect of the ITO-based broadband metamaterial absorber unit is provided. It can be seen that broadband absorption is achieved in the microwave frequency band and the absorbing efficiency can be guaranteed.

[0075] The broadband metamaterial absorber unit based on ITO in this embodiment realizes impedance optimization, broadens the absorption band, and improves the absorbing performance of the material.

[0076] The present embodiment provides a device based on electromagnetic absorption, and the device includes the ITO-based broadband metamaterial absorber unit.

[0077] In one embodiment, the device is a satellite device, used in the satellite field.

[0078] In another embodiment, the device is a communication device used in the field of wireless communications.

[0079] In yet another embodiment, the device is a radar device, used in the radar field.

[0080] In another embodiment, the device is a stealth device used in the field of stealth technology, for example, as an electromagnetic stealth cloak.

[0081] It can be understood that the above is only an example and not a limitation, and the device can also be used as a solar energy collection device, a sensor device, an optoelectronic device, a high-efficiency wave absorbing device, etc.

[0082] Please refer to Figure 5 The embodiment of the present invention further provides a method for preparing a broadband metamaterial absorber unit based on ITO, the method comprising the following steps:

[0083] S1, obtaining a metal layer 70;

[0084] S2, preparing a second intermediate dielectric plate layer 60 on the metal layer 70;

[0085] S3, plating a second PET conductive film layer 50 on the second intermediate dielectric plate layer 60;

[0086] S4, plating a second basic ITO conductive film layer on the second PET conductive film layer 50, wherein the shape of the second basic ITO conductive film layer is a square (square three);

[0087] S5, preparing a second cross-shaped through hole 41 on the second basic ITO conductive film layer to obtain a second ITO conductive film layer 40, wherein the second cross-shaped through hole 41 can penetrate the four corners of the third square (the second basic ITO conductive film layer);

[0088] S6, preparing a first intermediate dielectric plate layer 30 on the second ITO conductive film layer 40;

[0089] S7, plating a first PET conductive film layer 20 on the first intermediate dielectric layer 30;

[0090] S8, coating a first basic ITO conductive film layer on the first PET conductive film layer 20, wherein the shape of the first basic ITO conductive film layer is a square (square one) with a side length of b;

[0091] S9. Prepare a cross-shaped through hole 1 (a straight through hole 11 and a straight through hole 2 12) and four straight through holes 3 13 on the first basic ITO conductive film layer to obtain a first ITO conductive film layer 10. The cross-shaped through hole 1 passes through the midpoints of the four sides of the square 1, that is, the lengths of the straight through hole 11 and the straight through hole 2 12 are both b, the straight through hole 11 is perpendicular to the straight through hole 2 12, and the intersection of the straight through hole 11 and the straight through hole 2 12 is located at the center of the square 1. The four straight through holes 3 13 are located one by one on the four sides of the square 2, and the lengths of the four straight through holes are the same and less than The linear through hole 3 13 passes through two sides of the square 1, and the angle between the linear through hole 3 13 and the side of the square 1 is 45°. That is, a linear through hole 3 13 that can pass through the two sides is provided between every two adjacent sides of the first ITO conductive film layer 10, the lengths of the four linear through holes 3 13 are the same, any two linear through holes 3 13 do not intersect, and the angle between the linear through hole 3 13 and the side of the first ITO conductive film layer 10 is 45°.

[0092] The through hole can be prepared by not only removing the ITO conductive film layer, but also removing a thin layer of PET conductive film layer, and it is necessary to ensure that the intermediate dielectric layer is not exposed. The through hole is prepared by etching.

[0093] The method for preparing a broadband metamaterial absorber unit based on ITO in this embodiment has the advantages of simple processing and easy implementation. It can be realized by only relying on a simple ITO conductive film etching pattern and is easy to prepare and process within the microwave frequency band.

[0094] The broadband metamaterial absorber unit prepared by the method for preparing a broadband metamaterial absorber unit based on ITO can be used as a communication device, a radar device or a stealth device.

[0095] In summary, the broadband metamaterial absorber unit, preparation method and related equipment based on ITO provided by the present invention only have two ITO-PET conductive structures compared with the multi-resonance structure or multi-layer metal stacking strategy of the prior art, and the first ITO conductive film layer 10 and the second ITO conductive film layer 40 are structurally designed, so that the broadband metamaterial absorber unit can achieve broadband absorption in the microwave band and ensure a high absorption rate with fewer ITO conductive film layers. Since it only has two layers of resonant structure, the thickness of the overall structure is relatively low, taking into account broadband absorption in the microwave band (absorbing electromagnetic waves in the frequency range of 3.9GHz-12GHz), efficient absorption (absorption rate not lower than that of the multi-resonance structure or the multi-layer metal stacking strategy) and thin structure (thickness is lower than that of the multi-resonance structure or the multi-layer metal stacking strategy), taking into account performance and practicality, and promoting the metamaterial absorber to move towards a more efficient and convenient application direction. At the same time, the preparation method is not complicated and easy to implement.

[0096] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A broadband metamaterial absorber unit based on ITO, characterized in that: The invention comprises a first ITO conductive film layer, a first PET conductive film layer, a first intermediate dielectric plate layer, a second ITO conductive film layer, a second PET conductive film layer, a second intermediate dielectric plate layer and a metal layer which are sequentially arranged from top to bottom; the first ITO conductive film layer is in the shape of a square 1 with a side length of b, the first ITO conductive film layer has a cross-shaped through hole 1 and four linear through holes 3, the cross-shaped through hole 1 passes through the midpoints of the four sides of the square 1; the four linear through holes 3 are correspondingly located on the four sides of the square 2, the angle between the linear through hole 3 and the side of the square 1 is 45°, the lengths of the four linear through holes are the same and less than Both ends of the linear through hole three in the length direction penetrate the sides of the square one; the shape of the second ITO conductive film layer is square three, and the second ITO conductive film layer has cross-shaped through holes two that can penetrate the four corners of square three.

2. The ITO-based broadband metamaterial absorber unit according to claim 1, characterized in that: The first ITO conductive film layer and the first PET conductive film layer constitute a first ITO-PET conductive film layer, the second ITO conductive film layer and the second PET conductive film layer constitute a second ITO-PET conductive film layer, the first ITO-PET conductive film layer is provided with a cross-shaped groove one including the cross-shaped through hole one, the first ITO-PET conductive film layer is provided with a linear groove three including the linear through hole three, and the bottoms of the cross-shaped groove one and the linear groove three are both the first PET conductive film layer; the second ITO-PET conductive film layer is provided with a cross-shaped groove two including the cross-shaped through hole two, and the bottom of the cross-shaped groove two is the second PET conductive film layer.

3. The ITO-based broadband metamaterial absorber unit according to claim 2, characterized in that: The side length of the square 2 is equal to the length of the cross-shaped groove 1.

4. The ITO-based broadband metamaterial absorber unit according to claim 2, characterized in that: The length of the linear groove three is 9-9.2 mmmm.

5. The ITO-based broadband metamaterial absorber unit according to claim 1, characterized in that: The first PET conductive film layer is rectangular, and its length and width are both greater than b. The distance between the edge of the first ITO conductive film layer and the edge of the first PET conductive film layer is greater than 0.

6. The ITO-based broadband metamaterial absorber unit according to claim 1, characterized in that: The first PET conductive film layer is a rectangle whose length and width are both greater than b.

7. The ITO-based broadband metamaterial absorber unit according to claim 6, characterized in that: The length and width of the first PET conductive film layer are 13.2-14 mm, 13.2-14 mm, b is 11-11.4 mm, the width of the cross-shaped through hole 1 is 0.2-0.22 mm, and the width of the straight-line through hole 3 is 0.6-0.7 mm.

8. The ITO-based broadband metamaterial absorber unit according to claim 7, characterized in that: The side length of the second ITO conductive film layer is 11-11.4 mm, and the width of the second cross-shaped through hole is 0.2-0.25 mm.

9. The ITO-based broadband metamaterial absorber unit according to claim 8, characterized in that: The first intermediate dielectric plate layer and the second intermediate dielectric plate layer are both acrylic plates, the acrylic plates have a thickness of 3-3.02 mm, a dielectric constant of 2.25-2.28, and a loss tangent of 0.001-0.

002.

10. The ITO-based broadband metamaterial absorber unit according to claim 9, characterized in that: The thickness of the metal layer is 0.009-0.01 mm.

11. The ITO-based broadband metamaterial absorber unit according to claim 1, characterized in that: The first ITO conductive film layer and the first PET conductive film layer constitute a first ITO-PET conductive film layer, the second ITO conductive film layer and the second PET conductive film layer constitute a second ITO-PET conductive film layer, and the resistance of the first ITO-PET conductive film layer and the second ITO-PET conductive film layer are both 100Ω.

12. The ITO-based broadband metamaterial absorber unit according to claim 1, characterized in that: The side length of the second square is b.

13. The ITO-based broadband metamaterial absorber unit according to claim 1, characterized in that: The first PET conductive film layer, the first intermediate dielectric plate layer, the second PET conductive film layer, the second intermediate dielectric plate layer and the metal layer are all square.

14. The ITO-based broadband metamaterial absorber unit according to claim 13, characterized in that: The first PET conductive film layer and the second PET conductive film layer have the same side length.

15. The ITO-based broadband metamaterial absorber unit according to claim 1, characterized in that: The first ITO conductive film layer and the second ITO conductive film layer are both centrally symmetrical patterns.

16. The ITO-based broadband metamaterial absorber unit according to claim 11, characterized in that: The pattern of the first ITO conductive film layer and the pattern of the second ITO conductive film layer are both patterns that can overlap with themselves when rotated 90° around the center, and are both patterns that can overlap with themselves when rotated 270° around the center.

17. A device based on electromagnetic absorption, characterized in that A broadband metamaterial absorber unit based on ITO comprising any one of claims 1 to 16.

18. The device based on electromagnetic absorption according to claim 17, characterized in that: The device is a communication device, a radar device or a stealth device.

19. A method for preparing a broadband metamaterial absorber unit based on ITO, characterized in that: include: Get the metal layer; preparing a second intermediate dielectric plate layer on the metal layer; Plating a second PET conductive film layer on the second intermediate dielectric layer; Plating a second basic ITO conductive film layer on the second PET conductive film layer, wherein the second basic ITO conductive film layer is in a square shape; A second cross-shaped through hole is prepared on the second basic ITO conductive film layer to obtain a second ITO conductive film layer, wherein the second cross-shaped through hole can penetrate four corners of the second basic ITO conductive film layer; Preparing a first intermediate dielectric plate layer on the second ITO conductive film layer; Plating a first PET conductive film layer on the first intermediate dielectric layer; Plating a first basic ITO conductive film layer on the first PET conductive film layer, wherein the first basic ITO conductive film layer is in a square shape with a side length of b; A cross-shaped through hole 1 and four straight-shaped through holes 3 are prepared on the first basic ITO conductive film layer to obtain a first ITO conductive film layer, wherein the cross-shaped through hole 1 passes through the midpoints of the four sides of the first basic ITO conductive film layer, and the four straight-shaped through holes 3 are located on the four sides of the square 2 in a one-to-one correspondence, and the lengths of the four straight-shaped through holes are the same and less than Both ends of the linear through hole three in the length direction pass through the side of the square one, and the angle between the linear through hole three and the side of the first basic ITO conductive film layer is 45°.

20. Application of a broadband metamaterial absorber unit prepared by the method for preparing a broadband metamaterial absorber unit based on ITO according to claim 19, characterized in that: Applications as communication equipment, radar equipment or stealth equipment.

Images