Near-infrared perovskite laser and preparation method thereof

The near-infrared perovskite laser was prepared by solution method, and the microcrystal structure of the perovskite gain dielectric layer was used as the resonant cavity, which solved the problems of complex process, high cost and difficult to adjust the laser peak in the prior art, and achieved the effect of simplifying the structure, improving integration and high-precision wavelength adjustment.

CN119726348AActive Publication Date: 2025-03-28INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202410919782.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-07-10
Publication Date
2025-03-28
Estimated Expiration
2044-07-10

AI Technical Summary

Technical Problem

The existing near-infrared solid-state lasers are mainly based on Group III-V semiconductor materials. The preparation process is complex and costly, and the laser peak is difficult to be continuously adjustable. In particular, there are few researches on perovskite lasers in the wavelength range of 860-910nm.

Method used

A near-infrared perovskite laser was prepared by solution method, and the microcrystalline structure of the perovskite gain dielectric layer was used as the resonant cavity, without the need for an additional resonant cavity, the process was simple and the wavelength was adjustable.

Benefits of technology

The optical pumping laser without an external resonant cavity at room temperature is realized, which simplifies the device structure, improves integration, and adjusts the laser peak in the 860-910nm band through component and process regulation, and has high adjustment accuracy.

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Abstract

The invention provides a near-infrared perovskite laser and a preparation method thereof. The near-infrared perovskite laser includes: a substrate; the perovskite gain dielectric layer is arranged on the substrate, a microcrystalline structure is formed on the perovskite gain dielectric layer, and the microcrystalline structure is a resonant cavity of the perovskite gain dielectric layer. The near-infrared perovskite laser provided by the invention can realize lasing under optical pumping at room temperature without adopting an additional resonant cavity, so that the device structure is greatly simplified, and the integration of the laser is improved; by regulating and controlling the components and the preparation process, the regulation of the lasing peak can be realized, the regulation precision is high, and the use requirements of multiple wavelengths can be met; a full-solution method can be adopted for preparation, the process is simple, and the cost is low.
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