Laser assembly structure

Abstract

The invention discloses a laser assembly structure which comprises a laser module, a lens group module, an amplifier module, a heat sink, a semiconductor refrigeration controller, an airtight tube shell and a metalized FA optical fiber. Wherein the laser module, the lens group module and the amplifier module are all mounted on the heat sink; the heat sink is arranged on the semiconductor refrigeration controller; the semiconductor refrigeration controller is arranged in the airtight tube shell; and one end of the metallized FA fiber passes through the airtight tube shell and is connected with the heat sink.

Description

Technical Field

[0001] The invention belongs to the field of optoelectronic technology, and in particular relates to a laser component structure. Background Art

[0002] With the rapid growth of the domestic satellite Internet industry and the continuous development of space communication technology, traditional microwave communications on satellites have shifted to laser communication solutions. In laser communication systems, narrow linewidth lasers and erbium-doped fiber amplifiers (EDFA) are used as core optical devices to increase transmission power and data transmission rate, ensuring the quality and stability of communication between satellites. However, at present, due to the requirements of lightweight, high reliability and high stability of laser communication payloads, narrow linewidth lasers and EDFAs as discrete devices are difficult to meet in terms of performance and volume. Summary of the invention

[0003] The technical problem solved by the present invention is: to overcome the shortcomings of the prior art and provide a laser component structure which can achieve high-power narrow-linewidth output while greatly reducing the volume and weight.

[0004] The object of the present invention is achieved through the following technical solutions: a laser component structure, comprising: a laser module, a lens group module, an amplifier module, a heat sink, a semiconductor refrigeration controller, an airtight tube shell and a metallized FA optical fiber; wherein the laser module, the lens group module and the amplifier module are all mounted on the heat sink; the heat sink is arranged on the semiconductor refrigeration controller; the semiconductor refrigeration controller is arranged in the airtight tube shell; one end of the metallized FA optical fiber passes through the airtight tube shell and is connected to the heat sink.

[0005] In the above laser assembly structure, the laser module includes a DFB chip, a thermistor A, an MPD chip and a first substrate; wherein the DFB chip, the thermistor A and the MPD chip are all arranged on the first substrate; and the first substrate is mounted on the heat sink.

[0006] In the above-mentioned laser component structure, the lens group module includes a collimating lens, an optical isolator, a converging lens and a second substrate; wherein the collimating lens, the optical isolator and the converging lens are all arranged on the second substrate; and the collimating lens, the optical isolator and the converging lens are arranged in sequence along the direction of the optical path; and the second substrate is mounted on the heat sink.

[0007] In the above laser assembly structure, the amplifier module includes an SOA chip, a thermistor B and a third substrate; wherein the SOA chip and the thermistor B are both arranged on the third substrate; and the third substrate is mounted on the heat sink.

[0008] In the above laser assembly structure, the semiconductor refrigeration controller and the airtight tube shell are welded by reflow soldering; the heat sink and the semiconductor refrigeration controller are welded by reflow soldering.

[0009] In the above laser assembly structure, Sn63Pb37 tin-lead alloy solder is used for reflow soldering, and the maximum reflow soldering temperature does not exceed 250°C.

[0010] In the above laser assembly structure, the DFB chip is mounted on the first substrate by means of a gold-tin solder sheet eutectic method; the thermistor A and the MPD chip are both mounted on the first substrate by means of conductive silver glue.

[0011] In the above laser assembly structure, the SOA chip is mounted on the third substrate by means of a gold-tin solder sheet eutectic method; and the thermistor B is mounted on the third substrate by means of a conductive silver glue.

[0012] In the above laser component structure, the gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350°C.

[0013] In the above-mentioned laser component structure, the setting positions of the laser module and the lens group module are obtained through the following steps: placing the spatial optical power meter at the convergence position of the lens group module, the laser module emits a laser to reach the lens group module, the lens group module collimates and isolates the laser and then converges it to the spatial optical power meter, and the spatial optical power meter measures the optical power; adjusting the positions of the laser module and the lens group module, and the positions of the laser module and the lens group module corresponding to the maximum optical power are the required setting positions.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] (1) The present invention designs a solution for combining a DFB chip and an SOA chip for packaging. Compared with discrete DFB narrow-linewidth lasers and SOA amplifiers, this laser assembly can achieve high-power narrow-linewidth output while greatly reducing the size and weight.

[0016] (2) In the laser assembly structure proposed in the present invention, each assembly unit is designed independently of each other. The DFB ceramic substrate, the lens group ceramic substrate and the SOA ceramic substrate can be individually subjected to COC testing. At the same time, it is convenient for overall assembly, saving intermediate steps, and has the advantages of simple assembly process and high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0018] Figure 1 is a schematic diagram of a laser assembly structure provided by an embodiment of the present invention;

[0019] Figure 2 is a front view of a laser assembly provided by an embodiment of the present invention;

[0020] Figure 3 It is a cross-sectional view of a laser assembly provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0021] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to be able to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that, in the absence of conflict, the embodiments of the present invention and the features described in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0022] Figure 1 is a schematic diagram of a laser assembly structure provided by an embodiment of the present invention; Figure 2 is a front view of a laser assembly provided by an embodiment of the present invention; Figure 3 FIG. 1 is a cross-sectional view of a laser assembly provided by an embodiment of the present invention. Figure 1 , Figure 2 and Figure 3 As shown, the laser assembly structure includes a laser module 1, a lens group module 2, an amplifier module 3, a heat sink 4, a semiconductor refrigeration controller 5, an airtight tube shell 6 and a metallized FA optical fiber 7; wherein the laser module 1, the lens group module 2 and the amplifier module 3 are all mounted on the heat sink 4; the heat sink 4 is arranged on the semiconductor refrigeration controller 5; the semiconductor refrigeration controller 5 is arranged in the airtight tube shell 6; one end of the metallized FA optical fiber 7 passes through the airtight tube shell 6 and is connected to the heat sink 4.

[0023] like Figure 2 As shown, the laser module 1 includes a DFB chip 11, a thermistor A12, an MPD chip 13 and a first substrate; wherein the DFB chip 11, thermistor A12 and MPD chip 13 are all arranged on the first substrate; and the first substrate is mounted on the heat sink 4.

[0024] like Figure 2 As shown, the lens group module 2 includes a collimating lens 21, an optical isolator 22, a converging lens 23 and a second substrate; wherein the collimating lens 21, the optical isolator 22 and the converging lens 23 are all arranged on the second substrate; and the collimating lens 21, the optical isolator 22 and the converging lens 23 are arranged in sequence along the direction of the light path; the second substrate is mounted on the heat sink 4.

[0025] like Figure 2 As shown, the amplifier module 3 includes an SOA chip 31 , a thermistor B32 and a third substrate; wherein the SOA chip 31 and the thermistor B32 are both arranged on the third substrate; and the third substrate is mounted on the heat sink 4 .

[0026] The semiconductor refrigeration controller 5 and the airtight tube shell 6 are welded by reflow soldering; the heat sink 4 and the semiconductor refrigeration controller 5 are welded by reflow soldering. The reflow soldering uses Sn63Pb37 tin-lead alloy solder, and the maximum reflow soldering temperature does not exceed 250°C.

[0027] The DFB chip 11 is mounted on the first substrate by eutectic method of gold-tin solder sheet; the thermistor A12 and the MPD chip 13 are both mounted on the first substrate by conductive silver paste. The gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350°C.

[0028] The SOA chip 31 is mounted on the third substrate by eutectic method of gold-tin solder sheet; the thermistor B32 is mounted on the third substrate by conductive silver glue. The gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350°C.

[0029] The setting positions of the laser module 1 and the lens group module 2 are obtained through the following steps: placing the spatial optical power meter at the convergence position of the lens group module, the laser module 1 emits a laser to reach the lens group module 2, the lens group module 2 collimates and isolates the laser and then converges it to the spatial optical power meter, and the spatial optical power meter measures the optical power; adjusting the positions of the laser module 1 and the lens group module 2, and the positions of the laser module 1 and the lens group module 2 corresponding to the maximum optical power are the required setting positions.

[0030] like Figure 1 and Figure 2 As shown, the laser assembly consists of a laser module (DFB COC) 1, a lens group module 2 (lens group COC), an amplifier module 3 (SOA COC), a heat sink 4, a semiconductor refrigeration controller (TEC) 5, an airtight tube shell 6 and a metallized FA optical fiber 7. The DFB COC, the lens group COC and the SOA COC are all mounted on the heat sink, the heat sink is bonded to the TEC, the TEC is welded to the airtight tube shell, and the FA optical fiber is bonded to the heat sink by glue.

[0031] The assembly steps of the laser assembly are as follows:

[0032] TEC and heat sink assembly: TEC is mounted on the corresponding position of the airtight tube shell, and the heat sink is mounted on the TEC. The three are welded at one time by reflow soldering. The reflow soldering uses Sn63Pb37 tin-lead alloy solder. The maximum reflow soldering temperature does not exceed 250°C to ensure good contact between the bottom surface of TEC and the tube shell, TEC and the heat sink, and the positive and negative poles of TEC are welded to the corresponding pins of the tube shell.

[0033] DFB COC assembly: The DFB chip is mounted on the first substrate by eutectic method using gold-tin solder sheets. The gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350°C. Thermistor A and MPD chip are mounted on the first substrate by conductive silver glue. The above chip positions should be based on the specific drawings. The MPD chip should be at an 8-degree angle with the DFB chip to avoid reflection.

[0034] DFB COC gold wire bonding, through the gold wire bonding equipment, the DFB chip, MPD and thermistor are connected to the external test board. The test board can be used to power the DFB chip to emit light, verify whether there are any problems with the DFB COC assembly, and provide a light source reference for subsequent steps.

[0035] SOA COC assembly, the SOA chip is mounted on the third substrate by eutectic method of gold-tin solder sheet, the gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350°C. Thermistor B is mounted on the third substrate by conductive silver glue.

[0036] Lens group COC assembly: The isolator is mounted on the corresponding position on the lens group COC in advance with UV glue, and the DFB COC with gold wire bonding is used as a fixed output light source. At the same time, the collimating lens and the converging lens are adjusted, and the spot analyzer and the spatial optical power meter are used for observation to find the best coupling position. Finally, the collimating lens and the converging lens are mounted on the third substrate on the lens group COC with UV glue.

[0037] Three COCs were assembled. First, the DFB COC was mounted on the corresponding position of the heat sink through conductive silver glue. The lens group COC was adjusted as a whole. The spot analyzer and spatial optical power meter were used to observe and find the best coupling position. The lens group COC was fixed to the heat sink through conductive silver glue. At the same time, the SOA COC and FA optical fiber were adjusted, and the maximum optical power output of the FA optical fiber was observed to find the best coupling position. The SOA COC was fixed to the heat sink through conductive silver glue.

[0038] FA optical fiber is assembled and repositioned. After the maximum coupling power is found, the optical fiber coupling position is determined. UV glue is applied to the bottom of FA for fixation and mounted on the heat sink. Black glue is added on both sides of FA for structural reinforcement.

[0039] The COC is gold-wire bonded to the tube shell. According to the wire bonding drawing, the SOA COC and the pads between the COC and the tube shell are gold-wire bonded to ensure that all wire bonding positions and push-pull forces meet the relevant requirements.

[0040] FA metallized optical fiber welding, feed solder wire into the opening of the airtight tube shell sealing joint, use a high-frequency welding machine to weld the metallized optical fiber, the welding power is required to be no higher than 6kW, the oscillation frequency of the high-frequency welding machine should not be less than 1100kHz, and the solder should be filled in the entire sealing joint.

[0041] Parallel sealing welding is used to weld the upper cover of the airtight shell to the shell body to achieve complete airtightness. Nitrogen baking is required before sealing welding, with a baking temperature of 85°C for no less than 168 hours, and then parallel sealing welding can be performed.

[0042] For the laser structure, this embodiment proposes a four-way COC modular design, which can design and assemble the DFB COC, lens group COC and SOA COC separately, thereby improving the assembly efficiency of a single COC. For the assembly of laser components, the present invention proposes complete assembly steps and requirements, with a simple assembly process and high process reliability.

[0043] This embodiment designs a solution for combining the packaging of the DFB chip and the SOA chip. Compared with discrete devices of the DFB narrow-linewidth laser and the SOA amplifier, this laser component greatly reduces the volume and weight while achieving high-power narrow-linewidth output. The laser component structure proposed in this embodiment has each assembly unit designed independently of each other. The DFB ceramic substrate, the lens group ceramic substrate and the SOA ceramic substrate can be individually subjected to COC testing. At the same time, it is convenient for overall assembly, saving intermediate processes, and has the advantages of simple assembly process and high reliability.

[0044] Although the present invention has been disclosed as above in the form of a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art may make possible changes and modifications to the technical solution of the present invention by using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the protection scope of the technical solution of the present invention.

Claims

1. A laser assembly structure, characterized in that include: A laser module (1), a lens module (2), an amplifier module (3), a heat sink (4), a semiconductor refrigeration controller (5), an airtight tube shell (6) and a metallized FA optical fiber (7); wherein: The laser module (1), the lens module (2) and the amplifier module (3) are all mounted on the heat sink (4); The heat sink (4) is arranged on the semiconductor refrigeration controller (5); The semiconductor refrigeration controller (5) is arranged in the airtight tube shell (6); One end of the metallized FA optical fiber (7) passes through the airtight tube shell (6) and is connected to the heat sink (4).

2. The laser assembly structure according to claim 1, characterized in that: The laser module (1) comprises a DFB chip (11), a thermistor A (12), an MPD chip (13) and a first substrate; wherein: The DFB chip (11), the thermistor A (12) and the MPD chip (13) are all arranged on the first substrate; The first substrate is mounted on the heat sink (4).

3. The laser assembly structure according to claim 1, characterized in that: The lens assembly module (2) comprises a collimating lens (21), an optical isolator (22), a converging lens (23) and a second substrate; wherein: The collimating lens (21), the optical isolator (22) and the converging lens (23) are all arranged on the second substrate; and the collimating lens (21), the optical isolator (22) and the converging lens (23) are arranged in sequence along the direction of the light path; The second substrate is mounted on the heat sink (4).

4. The laser assembly structure according to claim 1, characterized in that: The amplifier module (3) comprises an SOA chip (31), a thermistor B (32) and a third substrate; wherein: The SOA chip (31) and the thermistor B (32) are both arranged on the third substrate; The third substrate is mounted on the heat sink (4).

5. The laser assembly structure according to claim 1, characterized in that: The semiconductor refrigeration controller (5) and the airtight tube shell (6) are welded by reflow soldering; The heat sink (4) and the semiconductor refrigeration controller (5) are welded by reflow soldering.

6. The laser assembly structure according to claim 1, characterized in that: The reflow soldering uses Sn63Pb37 tin-lead alloy solder, and the maximum reflow soldering temperature does not exceed 250°C.

7. The laser assembly structure according to claim 2, characterized in that: The DFB chip (11) is mounted on the first substrate by means of a gold-tin solder sheet eutectic method; The thermistor A (12) and the MPD chip (13) are both mounted on the first substrate by means of conductive silver glue.

8. The laser assembly structure according to claim 4, characterized in that: The SOA chip (31) is mounted on the third substrate by means of a gold-tin solder sheet eutectic method; The thermistor B (32) is mounted on the third substrate by conductive silver glue.

9. The laser assembly structure according to claim 7 or 8, characterized in that: The gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350°C.

10. The laser assembly structure according to claim 1, characterized in that: The arrangement positions of the laser module (1) and the lens group module (2) are obtained by the following steps: The spatial optical power meter is placed at the convergence position of the lens group module (2); the laser module (1) emits laser light to reach the lens group module (2); the lens group module (2) collimates and isolates the laser light and then converges it to the spatial optical power meter; the spatial optical power meter measures the optical power; The positions of the laser module (1) and the lens group module (2) are adjusted, and the positions of the laser module (1) and the lens group module (2) corresponding to the maximum optical power are the positions to be set.

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