Laser chip, light emitting device, optical module and optical communication system

Abstract

The invention provides a laser chip, a light emitting device, an optical module and an optical communication system, and belongs to the technical field of optical communication. The laser chip comprises a substrate layer, a first electrode contact layer, a first electrode layer, an active layer, a ridge waveguide layer, a second electrode contact layer and a second electrode layer. The first electrode contact layer is located on the upper surface of the substrate layer, and the first electrode layer is located on the upper surface of the first electrode contact layer; the active layer, the ridge waveguide layer, the second electrode contact layer and the second electrode layer are stacked on the upper surface of the first electrode contact layer in sequence; the laser chip comprises a plurality of laser sections and at least one electric isolation section in the light transmission direction, the electric isolation section is arranged between every two adjacent laser sections, the electric isolation depth at least extends into the lower surface of the first electrode contact layer, and the multiple laser sections share the ridge waveguide layer and are used for emitting lasers of various wavelengths. According to the invention, the problem of electrical signal crosstalk among the plurality of laser sections of the common-ridge waveguide layer can be solved.

Description

Technical Field

[0001] The present disclosure relates to the field of optical communication technology, and in particular to a laser chip, a light emitting device, an optical module and an optical communication system. Background Art

[0002] At present, the large-scale deployment of passive optical networks (PON) includes gigabit-capable PON (GPON). With the upgrade of network bandwidth, 10GPON and 50GPON will be deployed later. In order to enable different PON systems to coexist, combo optical modules have emerged.

[0003] However, in order to transmit multiple wavelengths, current combo optical modules usually package the laser chip that transmits each wavelength separately into a transistor outline (TO), resulting in a high cost of the combo optical module. Summary of the invention

[0004] The present disclosure provides a laser chip, a light emitting device, an optical module and an optical communication system, which can solve the problem that multiple laser segments on a common substrate layer in the related art are prone to electrical signal crosstalk. The technical solution is as follows:

[0005] In a first aspect, a laser chip is provided, the laser chip comprising a substrate layer, a first electrode contact layer, a first electrode layer, an active layer, a ridge waveguide layer, a second electrode contact layer and a second electrode layer;

[0006] The first electrode contact layer is located on the upper surface of the substrate layer, and the first electrode layer is located on the upper surface of the first electrode contact layer;

[0007] The active layer, the ridge waveguide layer, the second electrode contact layer and the second electrode layer are sequentially stacked on the upper surface of the first electrode contact layer;

[0008] The laser chip is a multi-segment laser chip, which includes multiple laser segments and at least one electrical isolation segment in the light transmission direction. The electrical isolation segment is arranged between two adjacent laser segments, and the electrical isolation depth extends at least to the lower surface of the first electrode contact layer.

[0009] In the solution disclosed in the present invention, the laser chip includes multiple laser segments, each laser segment is equivalent to a laser, so the laser chip realizes multiple lasers and is integrated together at the chip level, that is, the laser chip that can emit multiple wavelengths is packaged into a light emitting device. Then, when used in a Combo optical module, the number of light emitting devices can be reduced, thereby reducing the cost of the Combo optical module.

[0010] Moreover, the multiple laser segments of the laser chip share the ridge waveguide layer and have the same optical path. Therefore, in the packaging of the laser chip, optical path control components such as combiners and filters are omitted, which simplifies the packaging process and reduces the packaging cost.

[0011] Moreover, the first electrode layer (such as the N electrode layer) and the second electrode layer (such as the P electrode layer) of the laser chip are located on the same side of the substrate layer. If they are both above the substrate layer, then the carriers that excite the active layer to emit light do not need to pass through the substrate layer. Furthermore, the substrate layer can be made of materials with relatively large resistivity and relatively poor conductivity, such as semi-insulating materials (because the material cannot achieve complete insulation, it is called semi-insulating). The thickness of the other layers growing above the substrate layer is relatively thin, and it is easy to make electrical isolation. Therefore, the two adjacent laser segments are separated by the electrical isolation segment with relatively large resistivity and the substrate layer with relatively large resistivity, thereby avoiding the problem of electrical signal crosstalk between the two adjacent laser segments.

[0012] In a possible implementation manner, the substrate layer is made of a semi-insulating material.

[0013] In the solution disclosed in the present disclosure, since the first electrode layer and the second electrode layer are located on the same side of the substrate layer, when the modulation signal is loaded on the first electrode layer and the second electrode layer, the generated carriers do not need to pass through the substrate layer, so the material of the substrate layer can be selected as a semi-insulating material with a relatively large resistivity and relatively poor conductivity. Therefore, although the laser chip shares the substrate layer, and the substrate layer and the first electrode layer are relatively close, because the substrate layer is a semi-insulating substrate layer, it is difficult for the electrical signals loaded on the first electrode layer of different laser segments to cause electrical signal crosstalk through the semi-insulating substrate layer.

[0014] In a possible implementation manner, the first electrode layer and the second electrode layer both have a distance between them at the electrical isolation section.

[0015] In the solution disclosed in the present invention, the first electrode layer and the second electrode layer have a spacing at the electrical isolation section, which can prevent electrical signals from different laser sections from causing electrical signal crosstalk through the first electrode layer and the second electrode layer.

[0016] In a possible implementation, the first electrode contact layer and the second electrode contact layer both have a spacing, and the spacing of the first electrode contact layer is located opposite to the spacing of the first electrode layer, and the spacing of the second electrode contact layer is located opposite to the spacing of the second electrode layer.

[0017] In the solution disclosed in the present invention, there is a spacing between the electrode contact layers of different laser segments, which can avoid the electrical signals of different laser segments from causing electrical signal crosstalk through the first electrode contact layer and the second electrode contact layer.

[0018] In a possible implementation manner, ions for increasing the resistivity of the electrical isolation section are implanted into the electrical isolation section.

[0019] The implanted ions may be inert ions with relatively large resistivity.

[0020] In the solution shown in the present disclosure, ions with relatively high resistivity are injected into the electrical isolation segment, which can increase the resistivity of the ridge waveguide layer in the electrical isolation segment, the resistivity of the active layer in the electrical isolation segment, the resistivity of the first electrode contact layer in the electrical isolation segment, the resistivity of the grating layer in the electrical isolation segment, and the resistivity of the upper and lower restriction layers in the electrical isolation segment, thereby avoiding electrical signal crosstalk between two adjacent laser segments through the ridge waveguide layer, the active layer, the grating layer, the first electrode contact layer, and the upper and lower restriction layers.

[0021] In a possible implementation, the laser chip further includes at least one light processing segment, and the light processing segment is arranged between two adjacent laser segments;

[0022] The light processing section is used to reflect the laser light emitted by the laser section between the light emitting end and the light processing section, and to transmit the laser light emitted by the laser section between the backlight end and the light processing section.

[0023] The solution disclosed in the present disclosure can adjust the grating period of the grating layer in the light processing section to reflect the laser light emitted between the grating layer and the light-emitting end, thereby preventing the laser light from propagating away from the light-emitting end and affecting the laser light behind. The grating layer can also transmit the laser light emitted between the grating layer and the backlight end, so that this part of the laser light is transmitted to the light-emitting end.

[0024] In a possible implementation, if one of the light processing segments is arranged between two adjacent laser segments, then the electrical isolation segment is arranged between the laser segment and the light processing segment;

[0025] If a plurality of light processing segments are arranged between two adjacent laser segments, the electrical isolation segment is arranged between the laser segment and the light processing segment, and between two adjacent light processing segments.

[0026] In the solution disclosed in the present disclosure, the light processing section can perform other processing on the laser through the active layer, such as absorption processing or amplification processing, on the basis of reflecting and transmitting the laser through the grating layer. The absorption or amplification processing of the light processing section requires voltage. Therefore, in order to avoid crosstalk between the voltage applied to the light processing section and the voltage applied to the laser section, and to avoid crosstalk between voltages applied to different light processing sections, the laser section and the light processing section, as well as two adjacent light processing sections, are separated by an electrical isolation section.

[0027] In a possible implementation, the optical processing section is a phase modulation processing section, an electroabsorption processing section, or an amplification processing section.

[0028] The solution disclosed in the present invention is a phase modulation processing segment, which is used to reflect the laser emitted between the phase modulation processing segment and the light output end through the grating layer, and transmit the laser emitted between the phase modulation processing segment and the backlight end, and can also improve the single-mode yield of the laser chip.

[0029] Among them, the single-mode yield, which can also be called the single-mode finished product rate, is that the laser segment of the laser chip is usually required to have only one main mode. If one or some laser segments have multiple main modes, the laser chip is scrapped. Then, the ratio of the laser chips that satisfy the requirement that each laser segment has only one main mode to the total number of laser chips is the single-mode yield.

[0030] In the solution disclosed in the present invention, the EA processing segment is used to reflect the laser emitted between the EA processing segment and the light output end through the grating layer, and transmit the laser emitted between the EA processing segment and the backlight end. In addition, it can absorb the laser emitted between the EA processing segment and the light output end through the active layer to prevent the laser from propagating toward the backlight end and affecting the laser behind.

[0031] The solution disclosed in the present invention is that the SOA processing segment is used to reflect the laser emitted between the SOA processing segment and the light output end through the grating layer, and transmit the laser emitted by the laser segment between the SOA processing segment and the backlight end. In addition, it can also amplify the laser emitted between the SOA processing segment and the backlight end through the active layer to compensate for the loss of laser in transmission.

[0032] In a possible implementation, the laser chip further includes a first electrode pad and a second electrode pad, the first electrode pad is electrically connected to the first electrode layer, and the second electrode pad is electrically connected to the second electrode layer;

[0033] The first electrode pad and the second electrode pad are located on different sides or the same side of the ridge waveguide layer.

[0034] In a possible implementation manner, the laser chip further includes a buffer layer, and the buffer layer is located between the substrate layer and the first electrode contact layer.

[0035] In a second aspect, a light emitting device is provided, wherein the light emitting device comprises the laser chip described in the first aspect.

[0036] In the solution shown in the present disclosure, the laser chip described in the first aspect is a bare chip. Then, after the laser chip is packaged, it can be used in a light emitting device.

[0037] According to a third aspect, an optical module is provided, wherein the optical module comprises the light emitting device according to the second aspect.

[0038] In the solution shown in the present disclosure, the optical module includes the optical emitting device, circuit board, driving circuit and other devices described in the second aspect. The optical module can be a transmitting optical module or a receiving optical module. The optical module can be used in PON or in an online optical fiber detection system.

[0039] In a fourth aspect, an optical communication system is provided, comprising a communication device and the optical module described in the third aspect, wherein the optical module is connected to the communication device in a pluggable manner, or the optical module is integrated in the communication device.

[0040] In the solution shown in the present disclosure, the optical communication system can be a PON system or an online optical fiber detection system. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 is a schematic top view of a laser chip provided by the present disclosure;

[0042] Figure 2 The present invention provides a laser chip Figure 1 Schematic diagram of the cross section at AA;

[0043] Figure 3 The present invention provides a laser chip. Figure 1 Schematic diagram of the cross section at BB;

[0044] Figure 4 The present invention provides a laser chip Figure 1 Schematic diagram of the cross section at CC;

[0045] Figure 5 is a schematic top view of a laser chip provided by the present disclosure;

[0046] Figure 6 The present invention provides a laser chip Figure 5Schematic diagram of the cross section at BB;

[0047] Figure 7 The present invention provides a laser chip Figure 5 Schematic diagram of the cross section at CC.

[0048] Description of Reference Numerals

[0049] 1. Substrate layer; 2. Buffer layer; 3. First electrode contact layer; 4. First electrode layer; 5. Lower limiting layer; 6. Active layer; 7. Upper limiting layer; 8. Grating layer; 9. Ridge waveguide layer; 10. Second electrode contact layer; 11. Second electrode layer; 12. First electrode pad; 13. Second electrode pad; 14. Insulating layer.

[0050] A, laser section; A1, first laser section; A2, second laser section; B, electrical isolation section; B1, first electrical isolation section; B2, second electrical isolation section; C, optical processing section. DETAILED DESCRIPTION

[0051] Although the description of the present disclosure will be introduced in conjunction with some embodiments, this does not mean that the features of this application are limited to the implementation mode. On the contrary, the purpose of introducing the application in conjunction with the implementation mode is to cover other options or modifications that may be extended based on the claims of the present disclosure. In order to provide an in-depth understanding of the present disclosure, the following description will include many specific details. The present disclosure can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present disclosure, some specific details will be omitted in the description. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0052] In the embodiments of the present disclosure, the terms "first", "second", "third", and "fourth" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first", "second", "third", and "fourth" may explicitly or implicitly include one or more of the features.

[0053] This embodiment relates to a laser chip. The laser chip can be used in an optical module. The optical module can be a Combo optical module that can transmit and receive lasers of multiple wavelengths.

[0054] In order to achieve the emission of lasers of multiple wavelengths, a Combo optical module may include multiple laser chips, each laser chip emitting lasers of one wavelength. However, since this Combo optical module includes multiple laser chips and each laser chip is packaged into a TO, the manufacturing cost is relatively high.

[0055] Another type of Combo optical module may include a laser chip, which is multi-segment, and each segment is used to emit a laser of one wavelength. This multi-segment laser chip structurally includes at least an N-electrode layer, a substrate layer, a lower confinement layer, an active layer, an upper confinement layer, a grating layer, a ridge waveguide layer, a P-type doped ohmic contact layer, and a P-electrode layer, which are stacked and arranged in sequence from bottom to top. However, this multi-segment laser chip usually adopts a common N-electrode layer. When a modulated signal is added to the N-electrode layer, there is a problem of signal crosstalk. For example, the modulated signal loaded on the N-electrode layer at a certain segment will crosstalk to the N-electrode layer at another segment. Even if the N-electrode layers of this multi-segment laser chip are independent of each other, there is still a problem of signal crosstalk for the following reasons:

[0056] In order to transmit current between the P electrode layer and the N electrode layer to stimulate the active layer between the P electrode layer and the N electrode layer to emit light, all layers between the P electrode layer and the N electrode layer, including the substrate layer, need to have good conductivity. For example, the material of the substrate layer is usually N-InP. However, once the substrate layer has good conductivity, there will be a problem of electrical signal crosstalk. For example, the modulated signal loaded on the N electrode layer at a certain section will pass through the substrate layer and crosstalk to the N electrode layer at another section.

[0057] Moreover, even if the lower surface of the substrate layer is treated with ion implantation to increase the resistivity of the substrate layer, since the thickness of the substrate layer is relatively thick and the depth of ion implantation is relatively shallow, the electrical signal applied to the N-electrode layer will still pass through the substrate layer with good conductivity and flow to other laser segments, causing electrical signal crosstalk.

[0058] In order to solve the above problem, this embodiment provides a laser chip, which may specifically be a bare laser chip before packaging.

[0059] like Figure 1 As shown, it is a top view schematic diagram of a laser chip. The laser chip is a multi-segment laser chip, including multiple laser segments A. Each laser segment A outputs a laser of one wavelength, and thus the laser chip can output lasers of multiple wavelengths.

[0060] It should be noted that, for the sake of convenience, the drawings of this embodiment are all illustrated with two laser segments A. The case of more laser segments A is similar and will not be illustrated one by one. Figure 1 As shown, the two laser segments A included in the laser chip can be respectively recorded as a first laser segment A1 and a second laser segment A2.

[0061] like Figure 1As shown, since the laser chip is packaged as a light emitting device, it is applied in the Combo optical module, which can solve the problem of high cost of the Combo optical module. In addition, since the P electrode layer and the N electrode layer of the laser chip are located on the same side of the substrate layer, the carriers that excite the active layer to emit light do not need to pass through the substrate layer. Therefore, the substrate layer can be made of a material with a relatively large resistivity and relatively poor conductivity. The other layers of the laser chip are relatively thin, and it is easier to make electrical isolation, which can solve the problem of signal crosstalk when the modulated signal is loaded on the N electrode layer.

[0062] The structural characteristics of the laser chip are introduced below. Figure 2 Therefore, in order to better introduce the laser chip, the structural features of the laser chip in the z direction are first introduced, and then the features of the multi-segment laser chip are introduced.

[0063] like Figure 2 The figure shows a cross-sectional schematic diagram of a laser chip, specifically along Figure 1 Schematic diagram of the cross section of AA.

[0064] like Figure 2 As shown, the laser chip includes a substrate layer 1 , a first electrode contact layer 3 , a first electrode layer 4 , an active layer 6 , a ridge waveguide layer 9 , a second electrode contact layer 10 and a second electrode layer 11 .

[0065] Continue to refer Figure 2 As shown, the first electrode contact layer 3 is located on the upper surface of the substrate layer 1, the first electrode layer 4 is located on the upper surface of the first electrode contact layer 3, and the active layer 6, the ridge waveguide layer 9, the second electrode contact layer 10 and the second electrode layer 11 are sequentially stacked on the upper surface of the first electrode contact layer 3.

[0066] In one example, the substrate layer 1 serves as the base of the laser chip. The carriers formed by the modulated signals loaded on the first electrode layer 4 and the second electrode layer 11 flow between the second electrode layer 11 and the first electrode contact layer 3 without passing through the substrate layer 1. Therefore, the material of the substrate layer 1 can be a semi-insulating material with relatively large resistivity and relatively poor conductivity (the material is called a semi-insulating material because it cannot achieve complete insulation). For example, the material of the substrate layer 1 can be indium phosphide (InP).

[0067] The first electrode layer 4 may be an N-electrode layer, and the second electrode layer 11 may be a P-electrode layer. Then, the first electrode contact layer 3 where the first electrode layer 4 is located may be an N-type ohmic contact layer, and the second electrode contact layer 10 may be a P-type ohmic contact layer.

[0068] In one example, the electrode contact layer is usually a compound formed by elements of Group III and Group V in the periodic table of chemical elements, so the electrode contact layer can also be called a Group III-V compound. Then, the N-type ohmic contact layer is an N-type doped Group III-V compound, and the P-type ohmic contact layer is a P-type doped Group III-V material.

[0069] The active layer 6 is a light-emitting layer capable of exciting laser light, for example, a multi-quantum well layer for exciting laser light under the action of an electric field. The ridge waveguide layer 9 is used to form an optical path so that the laser light excited by the active layer 6 is transmitted along the direction limited by the ridge waveguide layer 9.

[0070] refer to Figure 2 As shown, when a modulation signal is loaded on the first electrode layer 4 and the second electrode layer 11, because the first electrode layer 4 and the first electrode contact layer 3 are adjacent to each other, and the resistivity of the first electrode contact layer 3 is relatively small and the conductivity is relatively good, then an electric field can be formed between the second electrode layer 11 and the first electrode contact layer 3, and the carriers enter the active layer 6, so that the active layer 6 is stimulated to emit laser.

[0071] Continue to refer Figure 1 As shown, the laser chip further includes a first electrode pad 12 and a second electrode pad 13, wherein the first electrode pad 12 and the second electrode pad 13 are mainly used for punching gold wires thereon to electrically connect with a peripheral driving circuit.

[0072] The first electrode pad 12 and the second electrode pad 13 may be arranged on different sides of the ridge waveguide layer 9 (see Figure 1 As shown), it can also be arranged on the same side of the ridge waveguide layer 9.

[0073] In one example, the first electrode pad 12 is electrically connected to the first electrode layer 4, and the second electrode pad 13 is electrically connected to the second electrode layer 11. In this way, the driving circuit outside the laser chip can add the modulation signal to the first electrode layer 4 through the first electrode pad 12 and to the second electrode layer 11 through the second electrode pad 13.

[0074] It should be noted that the first electrode layer 4, the second electrode layer 11, the first electrode pad 12 and the second electrode pad 13 are all metal layers. Figure 1 And refer to Figure 2 As shown, the first electrode layer 4 and the first electrode pad 12 are integrally formed, and the second electrode layer 11, the second electrode pad 13 and the connection layer between the second electrode layer 11 and the second electrode pad 13 are integrally formed.

[0075] In one example, since the first electrode contact layer 3, the active layer 6, the ridge waveguide layer 9, and the lower limiting layer 5, the upper limiting layer 7 and the grating layer 8 mentioned below all have good conductivity, in order to limit the carriers to flow between the first electrode contact layer 3 and the second electrode layer 11, accordingly, Figure 2 As shown, the laser chip further includes an insulating layer 14, and the material of the insulating layer 14 can be specifically silicon dioxide, such as Figure 2 As shown, the lower limiting layer 5 , the active layer 6 , the upper limiting layer 7 , the grating layer 8 , the ridge waveguide layer 9 and the left and right sides of the second electrode contact layer 10 , as well as the lower surface of the second electrode pad 13 are all arranged with an insulating layer 14 .

[0076] In one example, in order to make the laser chip output a single longitudinal mode laser mode, accordingly, Figure 2 As shown, the laser chip further includes a grating layer 8 , wherein the grating layer 8 may be located between the active layer 6 and the ridge waveguide layer 9 , or between the active layer 6 and the first electrode contact layer 3 .

[0077] In this way, the grating layer 8 is used to select the mode of the output laser, so the grating layer 8 can also be called a mode-selective grating. By adjusting the grating period of the grating layer 8, the laser chip can output a single longitudinal mode laser.

[0078] In one example, the structure of the grating layer 8 can specifically be a distributed feedback (DFB) grating with phase shift, or an asymmetric corrugation-pitch-modulated (ACPM) grating or other grating structures having the function of selecting a single longitudinal mode.

[0079] In one example, in order to confine the carriers in the active layer 6, accordingly, as Figure 2 As shown, the laser chip further includes a lower confinement layer 5 and an upper confinement layer 7 , wherein the active layer 6 is located between the lower confinement layer 5 and the upper confinement layer 7 .

[0080] In one example, in order to better grow other layers on the upper surface of the substrate layer 1, accordingly, Figure 2 As shown, the laser chip may further include a buffer layer 2 , and the buffer layer 2 is located between the substrate layer 1 and the first electrode contact layer 3 .

[0081] Then, reference Figure 2 As shown, the buffer layer 2 and the first electrode contact layer 3 are sequentially stacked on the upper surface of the substrate layer 1, the first electrode layer 4 is located on the upper surface of the first electrode contact layer 3, and the lower restriction layer 5, the active layer 6, the upper restriction layer 7, the grating layer 8, the ridge waveguide layer 9, the second electrode contact layer 10 and the second electrode layer 11 are sequentially stacked and arranged on the upper surface of the first electrode contact layer 3.

[0082] The lower limiting layer 5 , the active layer 6 , the upper limiting layer 7 , the grating layer 8 , the ridge waveguide layer 9 and the left and right sides of the second electrode contact layer 10 , as well as the lower surface of the second electrode pad 14 are all arranged with an insulating layer 14 .

[0083] The above are the characteristics of the laser chip in the thickness direction (ie, the z-axis direction). The following will introduce the characteristics of the laser chip in the length direction (ie, the y-axis direction).

[0084] like Figure 1 As shown in FIG. 1 , a top view of a laser chip is shown. Figure 3 As shown, it is a cross-sectional schematic diagram of the laser chip, and is Figure 1 The cross-sectional diagram at BB is shown in the figure. Figure 4 As shown, it is also a cross-sectional schematic diagram of the laser chip, and is Figure 1 Schematic diagram of the cross section at CC. Figure 3 and Figure 4 The filled area in represents the ion implantation area.

[0085] refer to Figure 1 As shown, the laser chip is a multi-segment laser chip, including multiple laser segments A, each laser segment A is equivalent to a laser, and the laser can be a direct-modulated laser, and its working mode is a single main mode, so it can also be called a single longitudinal mode direct-modulated laser.

[0086] Among them, because the wavelengths of lasers emitted by different laser segments A are different, the laser chip can emit lasers of multiple wavelengths.

[0087] The length of each laser segment A is, that is, Figure 1 The length in the y-axis direction can be, for example, between 200 and 300 μm. For example, the length of the first laser segment A1 and the length of the second laser segment A2 are both between 200 and 300 μm.

[0088] In one example, in order to realize that the working mode of each laser segment A is a single longitudinal mode, accordingly, Figure 3 As shown, the grating layer 8 at the first laser segment A1 serves as the mode selection grating of the first laser segment A1, so that the first laser segment A1 is used as a single longitudinal mode laser, and the working mode is the single longitudinal mode mode. Similarly, the grating layer 8 at the second laser segment A2 serves as the mode selection grating of the second laser segment A2, so that the second laser segment A2 is also used as a single longitudinal mode laser, and the working mode is the single longitudinal mode mode. Since the working wavelengths of the first laser segment A1 and the second laser segment A2 are different, the corresponding grating layer 8 has a different period.

[0089] Furthermore, under the mode selection effect of the grating layer 8, the working mode of each laser segment A is a single longitudinal mode. For example, the working wavelength of the first laser segment A1 is between 1480-1500nm, the direct modulation rate is 2.5Gbit / s, and it is a 2.5G direct modulation laser. The working wavelength of the second laser segment A2 is between 1575-1580nm, the direct modulation rate is 10Gbit / s, and it is a 10G direct modulation laser.

[0090] like Figure 1 And refer to Figure 3 and Figure 4 As shown, multiple laser segments A share the substrate layer 1 and the ridge waveguide layer 9. Figure 1 And refer to Figure 3 and Figure 4 As shown, a plurality of laser segments A are arranged in sequence along the light transmission direction between the light output end and the backlight end, that is, the plurality of laser segments A are connected in series in the light transmission direction (ie, the y-axis).

[0091] Among them, Figure 1 As shown, the light-emitting end and the backlight end are located opposite to each other, and the light-emitting end is coated with an anti-reflection film so that the lasers emitted by each laser segment A can pass through the light-emitting end and be emitted from the laser chip.

[0092] For example, the anti-reflection film at the light output end enhances the transmittance of the 1490 nm laser emitted by the first laser segment A1 and the 1577 nm laser emitted by the second laser segment A2.

[0093] The backlight end is coated with a high-reflection film, or the backlight end is a cleavage surface of a laser chip, so that the laser emitted by each laser segment A is reflected when transmitted to the backlight end.

[0094] For example, the high-reflection film plated on the backlight end has high reflectivity to the 1490nm laser emitted by the first laser segment A1 and the 1577nm laser emitted by the second laser segment A2.

[0095] In one example, in order to realize that multiple laser segments A share the ridge waveguide layer 9 and have the same optical path but are independent of each other and do not interfere with each other, correspondingly, the multiple laser segments A need to meet at least the following conditions.

[0096] Because multiple laser segments A are on a common transmission optical path, in order to avoid high-energy short-wavelength lasers being absorbed by low-energy long-wavelength lasers during laser transmission, correspondingly, when multiple laser segments A are arranged along the light transmission direction, their operating wavelengths increase successively from the light-emitting end to the backlight end of the laser chip. That is, for any two laser segments A, the laser segment A emitting short-wavelength lasers is close to the light-emitting end, and the laser segment A emitting long-wavelength lasers is close to the backlight end.

[0097] For example, Figure 2As shown, the working wavelength of the first laser segment A1 is λ1 (such as 1490nm), the working wavelength of the second laser segment A2 is λ2 (such as 1577nm), λ1 is smaller than λ2, then the first laser segment A1 is close to the light output end, and the second laser segment A2 is close to the backlight end.

[0098] In one example, when the laser is being transmitted, for any two laser segments A, the transition energy level difference of the laser emitted by the laser segment A far from the light-emitting end is much smaller than the energy gap of the laser emitted by the laser segment A close to the light-emitting end. That is, for two lasers of different wavelengths, the transition energy level difference of the long-wavelength laser is much smaller than the energy gap of the short-wavelength laser. When the long-wavelength laser is transmitted to the short-wavelength laser, the effect on the short-wavelength laser is small, so that the laser segment A emitting the short-wavelength laser is basically transparent to the laser segment A emitting the long-wavelength laser.

[0099] For example, the transition energy level difference of the 1577nm laser emitted by the second laser segment A2 is Q1, and the energy gap of the 1490nm laser emitted by the first laser segment A1 is Q2. Q1 is much smaller than Q2, so that the 1490nm laser is basically transparent to the 1577nm laser.

[0100] In one example, during the transmission of the laser, in order to avoid the grating layer 8 at the laser segment A close to the light-emitting end, the laser emitted by the laser segment A far from the light-emitting end is filtered out, that is, Figure 3 As shown, in order to avoid the grating layer 8 at the first laser segment A1, the laser emitted by the second laser segment A2 is filtered out. Accordingly, for any two laser segments A, the working wavelength of the laser segment A far away from the light output end is outside the stopping band of the grating layer 8 at the laser segment A close to the light output end.

[0101] For example, Figure 3 As shown, the 1577nm laser emitted by the second laser segment A2 is outside the blocking band of the grating layer 8 of the first laser segment A1, so as to avoid the 1577nm laser emitted by the second laser segment A2 being filtered out by the grating layer 8 of the first laser segment A1 when being transmitted to the first laser segment A1.

[0102] It should be pointed out that regarding the relationship between the layers of different laser segments A, the layers related to the wavelength are different in different laser segments A. For example, the active layer 6 of different laser segments A is different, and the difference is mainly reflected in the different components. Since the upper confinement layer 7 and the lower confinement layer 5 are both related to the active layer 6, the upper confinement layer 7 and the lower confinement layer 5 of different laser segments A are also different. Since the grating layer 8 is also related to the working wavelength of the laser segment A, the grating layer 8 of different laser segments A is different. The difference of the grating layer 8 is mainly reflected in the grating period, and the components can be the same. The layers that are not related to the wavelength can be the same in different laser segments A. For example, the substrate layer 1, the buffer layer 2, the first electrode contact layer 3, the first electrode layer 4, the ridge waveguide layer 9, the second electrode contact layer 10 and the second electrode layer 11 of different laser segments A can all be the same.

[0103] The above are the conditions that need to be met by multiple laser segments A to realize the common ridge waveguide layer 9. The solution to avoid signal crosstalk will be introduced below.

[0104] When modulated signals are loaded on different laser segments A, in order to avoid electrical signal crosstalk between different laser segments A, Figure 1 As shown, the laser chip includes at least one electrical isolation segment B, and two adjacent laser segments A are electrically isolated by the electrical isolation segment B, wherein the electrical isolation depth of the electrical isolation segment B at least extends into the lower surface of the first electrode contact layer 3, and the electrical isolation segment B is used to avoid modulation signal crosstalk between adjacent laser segments A.

[0105] The length of the electrically isolated segment B, that is, along Figure 1 The length in the y-axis direction can be between 20 and 50 μm.

[0106] The electrical isolation depth of the electrical isolation section B, that is, along Figure 3 The depth in the z-axis direction at least extends to the lower surface of the first electrode contact layer 3 for the following reasons (wherein Figure 3 and Figure 4 The medium electrical isolation depth extends into the substrate layer 1, and may extend into the interior of the substrate layer 1 or may extend into the upper surface of the substrate layer 1).

[0107] like Figure 3As shown, when the first electrode layer 4 and the second electrode layer 11 are loaded with a modulation signal, carriers flow between the second electrode layer 11 and the first electrode contact layer 3, so each layer between the second electrode layer 11 and the first electrode contact layer 3 needs to have good conductivity, while the substrate layer 1 and the buffer layer 2 do not need to have good conductivity. Therefore, the first electrode contact layer 3, the lower limiting layer 5, the active layer 6, the upper limiting layer 7, the grating layer 8, the ridge waveguide layer 9, the second electrode contact layer 10 and the second electrode layer 11 have good conductivity, then the modulation signals between different laser segments A will crosstalk through these layers. Therefore, the electrical isolation depth of the electrical isolation segment B needs to at least extend to the lower surface of the first electrode contact layer 3, and the buffer layer 2 and the substrate layer 1 can be made of a material with a relatively large resistivity.

[0108] In one example, the electrical isolation of the electrically isolated segment B may be achieved by removing a metal layer and injecting a substance that increases resistivity (eg, inert ions).

[0109] Wherein, removing the metal layer includes removing the electrode layer in the electrical isolation section B, or removing the electrode layer and the electrode contact layer in the electrical isolation section B.

[0110] As an example, Figure 4 As shown, there is a spacing between the first electrode layers 4 of two adjacent laser segments A at the electrical isolation segment B, such as Figure 3 As shown, there is also a distance between the second electrode layers 11 of two adjacent laser segments A at the electrical isolation segment B.

[0111] For example, Figure 3 As shown, there is a gap between the second electrode layer 11 of the first laser segment A1 and the second electrode layer 11 of the second laser segment A2, such as Figure 4 As shown, there is also a distance between the first electrode layer 4 of the first laser segment A1 and the first electrode layer 4 of the second laser segment A2.

[0112] Among them, Figure 4 As shown, the first electrode layer 4 of the laser chip is removed at the electrical isolation section B, thereby forming a gap, such as Figure 3 As shown, the second electrode layer 11 of the laser chip is removed at the electrical isolation section B, thereby forming a gap.

[0113] As another example, Figure 4 As shown, the first electrode contact layer 3 also has a spacing in the electrical isolation section B, and the spacing position is opposite to the spacing position of the first electrode layer 4, that is, as shown in FIG. Figure 4 As shown, on the side where the first electrode layer 4 is located, there is a spacing between the first electrode layers 4 of two adjacent laser segments A, and between the first electrode contact layers 3 of two adjacent laser segments A at the electrical isolation section B.

[0114] Likewise, if Figure 3 As shown, the second electrode contact layer 10 has a spacing, and the spacing position is opposite to the spacing position of the second electrode layer 11, that is, as shown in Figure 3 As shown, there is also a distance between the second electrode layers 11 of two adjacent laser segments A and between the second electrode contact layers 10 of two adjacent laser segments A at the electrical isolation segment B.

[0115] For example, Figure 3 As shown, there is a gap between the first electrode layer 11 of the first laser segment A1 and the first electrode layer 11 of the second laser segment A2, and there is also a gap between the second electrode contact layer 10 of the first laser segment A1 and the second electrode contact layer 10 of the second laser segment A2. Figure 4 As shown, there is a gap between the first electrode layer 4 of the first laser segment A1 and the first electrode layer 4 of the second laser segment A2, and there is also a gap between the first electrode contact layer 3 of the first laser segment A1 and the first electrode contact layer 10 of the second laser segment A2 on the side where the first electrode layer 4 is located.

[0116] Among them, Figure 4 As shown, on the side where the first electrode layer 4 is located, the first electrode contact layer 3 of the laser chip is removed at the electrical isolation section B, thereby forming a gap, such as Figure 3 As shown, the second electrode contact layer 10 of the laser chip is removed at the electrical isolation section B, thereby forming a gap.

[0117] Therefore, combined with Figure 3 and Figure 4 As shown, since the electrode layer is located on the upper surface of the electrode contact layer, the electrode contact layer can also be removed at the position where the electrode layer is removed to enhance the electrical isolation effect.

[0118] Since the ridge waveguide layer 9 is also conductive, electrical signal crosstalk will occur between adjacent laser segments A through the ridge waveguide layer 9. Therefore, as described above, the electrical isolation segment B also achieves electrical isolation by injecting ions for increasing resistivity.

[0119] The depth of the ion implantation at least extends to the lower surface of the first electrode contact layer 3 , for the reasons mentioned above.

[0120] For example, the electrically isolated section B may be implanted with inert ions for increasing the resistivity of the electrically isolated section B.

[0121] In one example, ions for increasing the resistivity of the electrical isolation segment B may be injected into the electrical isolation segment B multiple times to achieve the resistivity in the electrical isolation segment B and meet the requirement of no crosstalk of electrical signals.

[0122] For example, the first electrode layer 4 is an N-electrode layer, the material of the first electrode contact layer 3 is an N-type doped III-V compound material, the substrate layer is semi-insulating InP, the second electrode layer 11 is a P-electrode layer, and the material of the second electrode contact layer 10 is a P-type doped III-V compound material. Then, multiple ion implantations are performed to increase the resistivity of the N-type doped III-V material in the electrical isolation segment B, and the ion implantation depth must at least enter the lower surface of the first electrode contact layer 3 (such as extending into the substrate layer 1). Multiple ion implantations are performed again to increase the resistivity of the P-type doped III-V material in the electrical isolation segment B, and the ion implantation depth is at least greater than the P-type doped III-V material.

[0123] Based on the above, if Figure 3 As shown, the second electrode layers 11 of different laser segments A do not contact each other and are independent of each other, and cannot cause electrical signal crosstalk. Figure 4 As shown, the first electrode layers 4 of different laser segments A do not contact each other and are independent of each other, and cannot cause electrical signal crosstalk.

[0124] like Figure 3 As shown, the second electrode contact layers 10 of different laser segments A do not contact each other and are independent of each other, and cannot cause electrical signal crosstalk. Figure 4 As shown, on the side where the second electrode layer 4 is located, the first electrode contact layers 3 of different laser segments A do not contact each other and cannot perform electrical signal crosstalk.

[0125] Continue to refer Figure 3 As shown, ions for increasing the resistivity of the electrical isolation segment B are injected between the ridge waveguide layer 9 and the substrate layer 1 of the electrical isolation segment B. In addition, the substrate layer 1 and the buffer layer 2 are made of semi-insulating materials. Therefore, the resistivity of the ridge waveguide layer 9, the grating layer 8, the upper confinement layer 7, the active layer 6, the lower confinement layer 5, the first electrode contact layer 3 between the lower confinement layer 5 and the buffer layer 2, and the buffer layer 2 and the substrate layer 1 in the electrical isolation segment B are relatively large, making it difficult for electrical signals to crosstalk through them.

[0126] Therefore, since the resistivity in the electrical isolation segment B is relatively large and the materials of the substrate layer 1 and the buffer layer 2 are semi-insulating materials, the modulation signal loaded on the second electrode layer 11 of the first laser segment A1 is difficult to flow into the second laser segment A2, and the modulation signal loaded on the first electrode layer 4 of the first laser segment A1 is difficult to flow into the second laser segment A2. Similarly, the modulation signal loaded on the second electrode layer 11 of the second laser segment A2 is difficult to flow into the first laser segment A1, and the modulation signal loaded on the first electrode layer 4 of the second laser segment A2 is difficult to flow into the first laser segment A1. Thus, the problem of electrical signal crosstalk in different laser segments A can be avoided.

[0127] In this way, when driving the laser chip to emit laser, differential driving or single-ended driving can be adopted. Differential driving means that the modulation signal is loaded on both the first electrode layer 4 and the second electrode layer 11 of the laser segment A. Single-ended driving means that the modulation signal is loaded on the second electrode layer 11 of the laser segment A, and the first electrode layer 4 is grounded. Compared with single-ended driving, differential driving helps to improve the eye diagram quality of the laser.

[0128] In one example, in order to prevent the laser from being transmitted to the backlight end, accordingly, Figures 5 to 7 As shown, the laser chip also includes at least one light processing segment C, and a light processing segment C is arranged between two adjacent laser segments A. The light processing segment C is used to reflect the laser emitted by the laser segment A located between the light output end and the light processing segment C, and to transmit the laser emitted by the laser segment A located between the backlight end and the light processing segment C.

[0129] in, Figure 5 Schematic diagram of the top view of the laser chip. Figure 6 and Figure 7 These are cross-sectional schematic diagrams of laser chips. Figure 6 is Figure 5 Schematic diagram of the cross section at BB, Figure 7 is Figure 5 Schematic diagram of the cross section at CC. Figure 6 and Figure 7 The filled area in represents the ion implantation area.

[0130] like Figure 5 As shown, the light processing segment C reflects the laser emitted in front of it and transmits the laser emitted behind it, wherein the area between the light processing segment C and the light output end is recorded as the front of the light processing segment C, and the area between the light processing segment C and the backlight end is recorded as the back of the light processing segment C.

[0131] For example, Figure 5 As shown, the optical processing section C is used to reflect the laser light emitted by the first laser section A1 and transmit the laser light emitted by the second laser section A2.

[0132] In one example, by adjusting the period of the grating layer 8 in the light processing segment C, the laser light emitted by the laser segment A between the light output end and the light processing segment C can be reflected, while the laser light emitted by the laser segment A between the backlight end and the light processing segment C can be transmitted. Figure 6 As shown, the grating layer 8 in the optical processing section C reflects the laser light emitted in front of it and transmits the laser light emitted behind it.

[0133] In one example, the optical processing segment C may be located in the electrical isolation segment B (not shown). In the solution where the optical processing segment C is located in the electrical isolation segment B, the optical processing segment C only reflects and transmits lasers of different wavelengths through the period of the grating layer 8 .

[0134] In another example, the optical processing segment C may not be in the electrical isolation segment B. In this solution, the optical processing segment C may not only reflect and transmit the laser through the grating layer 8, but also phase adjust, absorb or amplify the laser through the active layer 6.

[0135] The phase processing, absorption processing or amplification processing of the optical processing segment C requires the application of voltage. Therefore, in order to avoid crosstalk between the voltage applied to the optical processing segment C and the voltage applied to the laser segment A, and to avoid crosstalk between voltages applied to different optical processing segments C, the laser segment A and the optical processing segment C, as well as two adjacent optical processing segments C, are separated by an electrical isolation segment B.

[0136] For example, as an example, if a light processing segment C is arranged between two laser segments A, then Figure 5 As shown, an electrical isolation segment B is arranged between one laser segment A and the optical processing segment C, and an electrical isolation segment B is also arranged between another laser segment A and the optical processing segment C. If multiple optical processing segments C are arranged between two laser segments A, an electrical isolation segment B is arranged between the laser segment A and the optical processing segment C, and between two adjacent optical processing segments C.

[0137] As described above, the optical processing segment C can perform phase modulation processing, or absorption processing, or amplification processing. Accordingly, the optical processing segment C can be a phase modulation processing segment, an electroabsorption processing segment, or an amplification processing segment.

[0138] In one example, in a solution where the laser chip includes multiple optical processing segments C, the multiple optical processing segments C may all be one of a phase modulation processing segment, an electroabsorption processing segment, and an amplification processing segment. Alternatively, the multiple optical processing segments C may include two or three of the phase modulation processing segment, the electroabsorption processing segment, and the amplification processing segment.

[0139] The phase modulation processing section is used to reflect the laser emitted by the laser segment A between the phase modulation processing section and the light output end through the grating layer 8, and transmit the laser emitted by the laser segment A between the phase modulation processing section and the backlight end, thereby improving the single-mode yield of the laser chip. The single-mode yield can also be called the single-mode finished product rate. The laser segment A of the laser chip is usually required to have only one main mode. If one or some laser segments A have multiple main modes, the laser chip is scrapped. Then, the ratio of the laser chips that meet the requirement that each laser segment A has only one main mode to the total number of laser chips is the single-mode yield.

[0140] For example, Figure 5 As shown, if the optical processing segment C is a phase modulation processing segment, then the optical processing segment C can reflect the laser emitted by the first laser segment A1 and transmit the laser emitted by the second laser segment A2 through the grating layer 8, thereby improving the single-mode yield of the laser chip.

[0141] Among them, the electro absorption (EA) processing segment is used to reflect the laser emitted by the laser segment A between the EA processing segment and the light-emitting end through the grating layer 8, and transmit the laser emitted by the laser segment A between the EA processing segment and the backlight end. In addition, it can absorb the laser emitted by the laser segment A between the EA processing segment and the light-emitting end through the active layer 6 to avoid the laser propagating toward the backlight end and affecting the laser behind.

[0142] like Figure 5 As shown, if the optical processing segment C is the EA processing segment, then the optical processing segment C can reflect the laser emitted by the first laser segment A1 through the grating layer 8, transmit the laser emitted by the second laser segment A2, and can also absorb the laser emitted by the first laser segment A1 and reflected to the optical processing segment C through the active layer 6 to avoid entering the second laser segment A2 and generating optical crosstalk.

[0143] For example, the first laser segment A1 emits 1490nm laser light, and the second laser segment A2 emits 1577nm laser light. Then, the EA processing segment reflects the 1490nm laser light and transmits the 1577nm laser light through the period of the grating layer 8. The EA processing segment also absorbs the 1490nm laser light through the active layer 6, thereby preventing the 1490nm laser light from being transmitted to the emission area of ​​the 1577nm laser light and being absorbed by the 1577nm laser light.

[0144] Among them, the semiconductor optical amplifier (SOA) processing segment is used to reflect the laser emitted by the laser segment A between the SOA processing segment and the light output end through the grating layer 8, and transmit the laser emitted by the laser segment A between the SOA processing segment and the backlight end. In addition, it can also amplify the laser emitted by the laser segment A between the SOA processing segment and the backlight end through the active layer 6 to compensate for the loss of laser generated during transmission.

[0145] like Figure 5 As shown, if the optical processing segment C is an SOA processing segment, then the optical processing segment C can reflect the laser emitted by the first laser segment A1 and transmit the laser emitted by the second laser segment A2 through the grating layer 8, and can also amplify the laser emitted by the second laser segment A2 through the active layer 6 to compensate for the optical loss caused by the laser emitted by the second laser segment A2 when passing through the first laser segment A1.

[0146] For example, the first laser segment A1 emits 1490nm laser, and the second laser segment A2 emits 1577nm laser. Then, the SOA processing segment reflects the 1490nm laser and transmits the 1577nm laser through the period of the grating layer 8. The SOA processing segment also amplifies the 1577nm laser through the active layer 6 to compensate for the optical loss caused by the transmission of the 1577nm laser to the 1490nm laser emission area.

[0147] In one example, the phase modulation processing section needs to be supplied with voltage to perform the phase modulation processing, the EA processing section also needs to be supplied with voltage to perform the absorption processing, and the SOA processing section also needs to be supplied with voltage to perform the amplification processing. Then, if Figure 6 and Figure 7 As shown, the light processing section C includes a first electrode layer 4 , a first electrode contact layer 3 , a second electrode layer 11 and a second electrode contact layer 10 .

[0148] In order to avoid the voltage applied to the optical processing section C from crosstalking to the laser section A, the corresponding Figure 6 and Figure 7 As shown, the laser segment A and the optical processing segment C are also electrically isolated by the electrical isolation segment B. The electrical isolation means are the same as those described above and can be referred to above.

[0149] If there are multiple optical processing segments C between two adjacent laser segments A, then in order to prevent the voltage applied to one of the optical processing segments C from crosstalking to another optical processing segment C, the two adjacent optical processing segments C are also electrically isolated by the electrical isolation segment B.

[0150] It should be pointed out that the grating layer 8 at the laser segment A is different from the grating layer 8 at the optical processing segment C. The difference is reflected in the different grating periods. As mentioned above, the grating layer 8 at the laser segment A is used for mode selection, while the grating layer 8 at the optical processing segment C is used to reflect the front laser and transmit the rear laser.

[0151] In one example, regarding the application scenario of the laser chip, the laser chip can be used in any single-wavelength and multi-wavelength scenarios, for example, it can be used in a PON system or in an online optical fiber detection system, wherein this embodiment does not limit the application scenario of the laser chip.

[0152] In this embodiment, the laser chip includes multiple laser segments A, each laser segment A is equivalent to a laser, so the laser chip realizes the integration of multiple lasers at the chip level, that is, the laser chip that can emit multiple wavelengths is packaged into a light emitting device (i.e., light emitting device). Then, when used in Combo light emitting devices, the number of light emitting devices can be reduced, thereby reducing the cost of Combo light emitting devices.

[0153] Moreover, the multiple laser segments A of the laser chip share the ridge waveguide layer and have the same optical path. Therefore, in the packaging of the laser chip, optical path control components such as combiners and filters are omitted, which simplifies the packaging process and reduces the packaging cost.

[0154] Moreover, the first electrode layer (such as the N electrode layer) and the second electrode layer (such as the P electrode layer) of the laser chip are located on the same side of the substrate layer. If they are both above the substrate layer, then the carriers that excite the active layer to emit light do not need to pass through the substrate layer. Furthermore, the substrate layer can be made of a material with a relatively large resistivity and relatively poor conductivity, while the other layers grown above the substrate layer are relatively thin and easy to electrically isolate. Furthermore, two adjacent laser segments are separated by an electrically isolated segment with a relatively large resistivity and a substrate layer with a relatively large resistivity, thereby avoiding the problem of electrical signal crosstalk between the two adjacent laser segments.

[0155] This embodiment also provides a light emitting device. As described above, the laser chip is a bare chip. Then, after the laser chip is packaged, it can be used in the light emitting device. The laser chip can be packaged in a TO package or a BOX package.

[0156] This embodiment also provides an optical module, the optical emitting device includes the above-mentioned optical emitting device, circuit board, driving circuit and other devices. The optical module can be a transmitting optical module or a receiving optical module. The optical module can be used in a passive optical network (PON) or in an online optical fiber detection system.

[0157] For example, the optical module is used in PON, because the laser chip of the optical module can emit lasers at different rates, for example, it can emit 2.5Gbit / s lasers and 10Gbit / s lasers, thereby realizing the coexistence of GPON and 10GPON in the passive optical network.

[0158] For another example, the optical module is used in an online optical fiber detection system, because the laser chip of the optical module can emit lasers at different rates, for example, it can emit normal signal light and detection signal light, wherein the wavelengths of the normal signal light and the detection signal light are different, thereby achieving the simultaneous operation of the two signal lights without interfering with each other. Thus, the return signal of the detection signal light is measured to obtain attenuation information, thereby indirectly measuring the loss and fault location of the optical cable, thereby achieving online optical fiber fault monitoring without affecting normal optical communication.

[0159] This embodiment further provides an optical communication system, which includes a communication device and the optical module described above. The optical module can be connected to the communication device in a pluggable manner, and the optical module can also be integrated in the communication device.

[0160] The optical communication system may be a PON system or an online optical fiber detection system.

[0161] The above description is only one embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. A laser chip, characterized in that: The laser chip comprises a substrate layer (1), a first electrode contact layer (3), a first electrode layer (4), an active layer (6), a ridge waveguide layer (9), a second electrode contact layer (10) and a second electrode layer (11); The first electrode contact layer (3) is located on the upper surface of the substrate layer (1), and the first electrode layer (4) is located on the upper surface of the first electrode contact layer (3); The active layer (6), the ridge waveguide layer (9), the second electrode contact layer (10) and the second electrode layer (11) are sequentially stacked on the upper surface of the first electrode contact layer (3); The laser chip is a multi-segment laser chip, which comprises a plurality of laser segments (A) and at least one electrical isolation segment (B) in the light transmission direction, wherein the electrical isolation segment (B) is arranged between two adjacent laser segments (A), and the electrical isolation depth at least extends to the lower surface of the first electrode contact layer (3).

2. The laser chip according to claim 1, characterized in that: The substrate layer (1) is made of semi-insulating material.

3. The laser chip according to claim 1 or 2, characterized in that: The first electrode layer (4) and the second electrode layer (11) both have a distance between them at the electrical isolation section (B).

4. The laser chip according to claim 3, characterized in that: The first electrode contact layer (3) and the second electrode contact layer (10) both have a spacing at the electrical isolation section (B), and the spacing position of the first electrode contact layer (3) corresponds to the spacing position of the first electrode layer (4), and the spacing position of the second electrode contact layer (10) corresponds to the spacing position of the second electrode layer (11).

5. The laser chip according to any one of claims 1 to 4, characterized in that: Ions are implanted into the electrical isolation section (B) for increasing the resistivity of the electrical isolation section (B).

6. The laser chip according to any one of claims 1 to 5, characterized in that: The laser chip further comprises at least one light processing section (C), wherein the light processing section (C) is arranged between two adjacent laser sections (A); The light processing section (C) is used to reflect the laser light emitted by the laser section (A) located between the light output end and the light processing section (C), and to transmit the laser light emitted by the laser section (A) located between the backlight end and the light processing section (C).

7. The laser chip according to claim 6, characterized in that: If one of the light processing sections (C) is arranged between two adjacent laser sections (A), then the electrical isolation section (B) is arranged between the laser section (A) and the light processing section (C); If a plurality of light processing sections (C) are arranged between two adjacent laser sections (A), the electrical isolation section (B) is arranged between the laser section (A) and the light processing section (C), and between two adjacent light processing sections (C).

8. The laser chip according to claim 7, characterized in that: The optical processing section (C) is a phase modulation processing section, an electroabsorption processing section or an amplification processing section.

9. The laser chip according to any one of claims 1 to 8, characterized in that: The laser chip further comprises a first electrode pad (12) and a second electrode pad (13), wherein the first electrode pad (12) is electrically connected to the first electrode layer (4), and the second electrode pad (13) is electrically connected to the second electrode layer (11); The first electrode pad (12) and the second electrode pad (13) are located on different sides or the same side of the ridge waveguide layer (9).

10. A light emitting device, characterized in that: The light emitting device comprises the laser chip according to any one of claims 1 to 9.

11. An optical module, characterized in that: The optical module comprises the light emitting device according to claim 10.

12. An optical communication system, characterized in that: The optical communication system comprises a communication device and the optical module according to claim 11, wherein the optical module is connected to the communication device in a pluggable manner, or the optical module is integrated in the communication device.

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