Vibrating body and substrate processing apparatus

Abstract

The vibrating body according to an embodiment is a vibrating body for cleaning a substrate. A portion of the vibrating body in contact with a liquid on a surface of the substrate has a region inclined with respect to an end portion of the vibrating body facing the substrate. When the angle between the inclined region and the extension line of the end portion of the vibrating body is set to be [theta], the following formula is satisfied. 20 DEG < = theta < = 87 DEG

Description

Technical Field

[0001] Embodiments of the present invention relate to a vibrating body and a substrate processing apparatus. Background Art

[0002] As a method for removing contaminants such as particles attached to the surface of a substrate such as an imprint template, a photolithography mask, or a semiconductor wafer, a freeze cleaning method and a spin cleaning method have been proposed.

[0003] In the freeze cleaning method, pure water is generally used as the cleaning liquid. For example, in the freeze cleaning method, first, pure water and cooling gas are supplied to the surface of the rotating substrate. Next, the supply of pure water is stopped, and a part of the supplied pure water is discharged to form a water film on the surface of the substrate. The water film is frozen by the supplied cooling gas. When the water film freezes to form an ice film, contaminants such as particles are absorbed into the ice film, thereby separating the contaminants from the surface of the substrate. Next, pure water is supplied to the ice film to melt the ice film, and the contaminants are discharged to the outside of the substrate together with the pure water by centrifugal force.

[0004] In the spin cleaning method, a cleaning liquid is supplied to the surface of a rotating substrate, and contaminants are discharged to the outside of the substrate together with the cleaning liquid by centrifugal force.

[0005] Freeze cleaning or spin cleaning can improve the removal rate of pollutants, but in recent years, there has been a demand for further improvement in the removal rate of pollutants.

[0006] Here, the inventors and others conducted research and found that in the freeze cleaning method, when pure water is supplied to the ice film to melt the ice film, the contaminants absorbed in the ice film are sometimes difficult to move in a direction parallel to the surface of the substrate. In addition, it was found that in the spin cleaning method, when the cleaning liquid is supplied to the surface of the substrate, the contaminants attached to the surface of the substrate are sometimes difficult to move in a direction parallel to the surface of the substrate. If the contaminants are difficult to move in a direction parallel to the surface of the substrate, it is difficult to improve the removal rate of the contaminants.

[0007] Prior art literature

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent Application Publication No. 2018-026436 Summary of the invention

[0010] Problems to be solved by the invention

[0011] The problem to be solved by the present invention is to provide a vibrating body and a substrate processing apparatus that can easily move contaminants in a direction parallel to a surface of a substrate.

[0012] Technical means of solving problems

[0013] The vibrator of the embodiment is a vibrator for cleaning a substrate. The portion of the vibrator that contacts the liquid on the surface of the substrate has a region that is inclined relative to the end of the vibrator that faces the substrate. When the angle between the inclined region and the extension line of the end of the vibrator is set to θ, the following formula is satisfied.

[0014] 20°≦θ≦87°

[0015] Effects of the Invention

[0016] According to the embodiments of the present invention, a vibrating body and a substrate processing apparatus are provided that can easily move contaminants in a direction parallel to a surface of a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] [ Figure 1 ] is a schematic diagram for illustrating a substrate processing apparatus according to a first embodiment.

[0018] [ Figure 2 ] is a schematic three-dimensional diagram of a vibrating body.

[0019] [ Figure 3 ] is a schematic diagram used to illustrate the function of the vibrating body of the comparative example.

[0020] [ Figure 4 ] is a schematic diagram used to illustrate the side of the groove.

[0021] [ Figure 5 ] is a graph used to illustrate the relationship between angle and vibration emission rate.

[0022] [ Figure 6 ] is a schematic stereoscopic diagram of a vibrating body of another embodiment.

[0023] [ Figure 7 ] is a schematic cross-sectional view used to illustrate the function of the vibrator.

[0024] [ Figure 8 ] is a schematic stereoscopic diagram of a vibrating body for illustrating another embodiment.

[0025] [ Fig. 9 ] is a timing diagram used to illustrate the function of the substrate processing apparatus.

[0026] [ Fig.10 ] is a graph for illustrating the temperature change of the liquid supplied to the surface of the substrate.

[0027] [ Fig.11 ] is a schematic diagram of a substrate processing apparatus for illustrating a second embodiment.

[0028] [ Fig.12] is a schematic diagram for illustrating a substrate processing apparatus according to a third embodiment.

[0029] [ Fig.13 ] is a schematic diagram for illustrating the side of a groove provided on a vibrating body. DETAILED DESCRIPTION

[0030] Hereinafter, the embodiments will be described by way of example with reference to the accompanying drawings. In addition, in each of the drawings, the same components are denoted by the same reference numerals and detailed descriptions thereof will be appropriately omitted.

[0031] The substrate 100 exemplified below may be, for example, a semiconductor wafer, an imprint template, a photolithography mask, a plate-like body used for a micro electro mechanical system (MEMS), etc. The substrate 100 is not limited to the examples.

[0032] The surface of the substrate 100 may or may not have concavoconvex portions formed thereon as a pattern. The substrate 100 without concavoconvex portions formed thereon may be, for example, a substrate before the concavoconvex portions are formed (bulk substrate).

[0033] (Substrate Processing Apparatus According to First Embodiment)

[0034] The substrate processing apparatus of the first embodiment can be used, for example, when freeze cleaning is performed on the substrate 100. The substrate processing apparatus can supply cooling gas to the surface side of the substrate 100 (for example, the side where the liquid supply film is formed, which will be described later), can supply cooling gas to the back side of the substrate 100 (for example, the side opposite to the side where the liquid supply film is formed), or can supply cooling gas to both the surface side and the back side of the substrate 100.

[0035] Hereinafter, as an example, a substrate processing apparatus 1 that supplies cooling gas to the back side of the substrate 100 will be described.

[0036] In addition, in this specification, the film of the liquid 101 formed on the surface 100 b (corresponding to an example of the first surface) of the substrate 100 is referred to as a liquid film.

[0037] Figure 1 It is a schematic diagram for illustrating the substrate processing apparatus 1 according to the first embodiment.

[0038] like Figure 1 As shown, the substrate processing apparatus 1 includes, for example, a mounting portion 2 , a cooling portion 3 , a first liquid supply portion 4 , a second liquid supply portion 5 , a chamber 6 , an exhaust portion 7 , an air supply portion 8 , a vibrating portion 9 , and a controller 10 .

[0039] The placement section 2 rotates the placed substrate 100. The placement section 2 includes, for example, a placement table 2a, a rotation shaft 2b, and a driving section 2c.

[0040] The stage 2a is rotatably disposed inside the chamber 6. The stage 2a is plate-shaped. A plurality of support portions 2a1 for supporting the substrate 100 are disposed on one of the main surfaces of the stage 2a. When the substrate 100 is supported by the plurality of support portions 2a1, the surface 100b (the surface on the cleaning side) of the substrate 100 faces the side opposite to the stage 2a.

[0041] In addition, a hole 2aa penetrating in the thickness direction of the mounting table 2a is provided in the center portion of the mounting table 2a.

[0042] One end of the rotating shaft 2b is provided on the inner wall of the hole 2aa of the mounting table 2a. The other end of the rotating shaft 2b is provided outside the chamber 6. The rotating shaft 2b is connected to the driving unit 2c outside the chamber 6.

[0043] The rotating shaft 2b is cylindrical. A blowing portion 2b1 is provided at the end of the rotating shaft 2b on the side of the mounting platform 2a. The blowing portion 2b1 opens on the surface of the mounting platform 2a on which a plurality of supporting portions 2a1 are provided. The end of the opening side of the blowing portion 2b1 is connected to the inner wall of the hole 2aa. The opening of the blowing portion 2b1 faces the back side 100a (equivalent to an example of the second surface) of the substrate 100 mounted on the mounting platform 2a. In a direction orthogonal to the central axis of the rotating shaft 2b, the cross-sectional area of ​​the blowing portion 2b1 increases as it approaches the side of the mounting platform 2a (opening side).

[0044] If the blowing portion 2b1 is provided, the discharged cooling gas 3a1 can be supplied to a wider area of ​​the back surface 100a of the substrate 100. In addition, the discharge speed of the cooling gas 3a1 can be reduced. Therefore, it is possible to prevent the substrate 100 from being locally cooled or the cooling speed of the substrate 100 from becoming too fast to prevent the liquid 101 from being overcooled as described later.

[0045] A cooling nozzle 3d is attached to the end of the rotating shaft 2b on the side opposite to the mounting table 2a. A rotating shaft seal (not shown) is provided between the end of the rotating shaft 2b on the side opposite to the mounting table 2a and the cooling nozzle 3d. Therefore, the end of the rotating shaft 2b on the side opposite to the mounting table 2a is sealed in an airtight manner.

[0046] The driving unit 2c is disposed outside the chamber 6. The driving unit 2c is connected to the rotation shaft 2b. The rotation force of the driving unit 2c is transmitted to the mounting table 2a via the rotation shaft 2b. Therefore, the mounting table 2a and the substrate 100 mounted on the mounting table 2a can be rotated by the driving unit 2c.

[0047] The driving unit 2c can change not only the start and stop of rotation but also the rotation speed (rotation speed). The driving unit 2c can include a control motor such as a servo motor, for example.

[0048] The cooling unit 3 supplies a cooling gas 3a1 for cooling the liquid 101 on the surface 100b of the substrate 100. The cooling unit 3 supplies the cooling gas 3a1 to the space between the mounting table 2a and the back surface 100a of the substrate 100. The cooling unit 3 includes, for example, a cooling liquid unit 3a, a filter 3b, a flow control unit 3c, and a cooling nozzle 3d. The cooling liquid unit 3a, the filter 3b, and the flow control unit 3c are provided outside the chamber 6.

[0049] The cooling liquid unit 3a stores the cooling liquid and generates the cooling gas 3a1. The cooling liquid is obtained by liquefying the cooling gas 3a1. The cooling gas 3a1 is not particularly limited as long as it is a gas that does not easily react with the material of the substrate 100. The cooling gas 3a1 can be an inert gas such as nitrogen, helium, or argon.

[0050] The cooling liquid section 3a includes a tank and a vaporization section. The tank contains the cooling liquid, and the vaporization section vaporizes the cooling liquid contained in the tank. The tank is provided with a cooling device for maintaining the temperature of the cooling liquid. The vaporization section raises the temperature of the cooling liquid and generates cooling gas 3a1 from the cooling liquid. The vaporization section can be heated, for example, by the temperature of the outside air or by a heat medium. The temperature of the cooling gas 3a1 can be any temperature below the freezing point of the liquid 101, and can be set to -170°C, for example.

[0051] Alternatively, the cooling gas 3a1 may be generated by cooling an inert gas such as nitrogen gas using a cooler etc. In this case, the cooling liquid portion can be simplified.

[0052] The filter 3 b is connected to the coolant unit 3 a via a pipe. The filter 3 b prevents contaminants such as particles contained in the coolant from flowing out to the substrate 100 side.

[0053] The flow control unit 3c is connected to the filter 3b via a pipe. The flow control unit 3c controls the flow of the cooling gas 3a1. The flow control unit 3c can be set to, for example, a mass flow controller (Mass Flow Controller, MFC) or the like. In addition, the flow control unit 3c can also indirectly control the flow of the cooling gas 3a1 by controlling the supply pressure of the cooling gas 3a1. In this case, the flow control unit 3c can be set to, for example, an automatic pressure controller (Auto Pressure Controller, APC) or the like.

[0054] The temperature of the cooling gas 3a1 generated from the cooling liquid in the cooling liquid section 3a is substantially a predetermined temperature. Therefore, by controlling the flow rate of the cooling gas 3a1 by the flow control section 3c, the temperature of the substrate 100 and the temperature of the liquid 101 on the surface 100b of the substrate 100 can be controlled. In this case, by controlling the flow rate of the cooling gas 3a1 by the flow control section 3c, a supercooled state of the liquid 101 can be generated in the cooling process described later.

[0055] The cooling nozzle 3d is cylindrical. One end of the cooling nozzle 3d is connected to the flow control unit 3c. The other end of the cooling nozzle 3d is arranged inside the rotating shaft 2b. The other end of the cooling nozzle 3d is located near the end of the blowing portion 2b1 on the opposite side to the mounting table 2a side (opening side).

[0056] The cooling nozzle 3d supplies the cooling gas 3a1 whose flow rate is controlled by the flow rate control unit 3c to the substrate 100. The cooling gas 3a1 discharged from the cooling nozzle 3d is directly supplied to the back surface 100a of the substrate 100 via the blowing unit 2b1.

[0057] In addition, as described above, the substrate processing apparatus may supply the cooling gas 3a1 to the surface 100b side of the substrate 100, or may supply the cooling gas 3a1 to the surface 100b side and the back side 100a side of the substrate 100. When the cooling gas 3a1 is supplied to the surface 100b side of the substrate 100, the cooling nozzle 3d may be provided on the surface 100b side of the substrate 100.

[0058] When the cooling gas 3a1 is supplied to the surface 100b of the substrate 100, freezing starts from the surface of the liquid film formed on the surface 100b of the substrate 100. When freezing starts from the surface of the liquid film, contaminants attached to the surface 100b of the substrate 100 are difficult to separate from the surface 100b of the substrate 100.

[0059] Therefore, in order to improve the removal rate of contaminants, it is preferable to configure the substrate processing apparatus 1 to supply the cooling gas 3 a 1 to the back surface 100 a side of the substrate 100 .

[0060] The first liquid supply unit 4 supplies liquid 101 to the surface 100b of the substrate 100. The liquid 101 is used in the preliminary process and the liquid film forming process described later. The liquid 101 is not particularly limited as long as it is a liquid that does not easily react with the material of the substrate 100. For example, the liquid 101 can be water (such as pure water or ultrapure water), a liquid with water as the main component, a liquid with a dissolved gas, etc.

[0061] The first liquid supply unit 4 includes, for example, a liquid storage unit 4a, a supply unit 4b, a flow rate control unit 4c, and a liquid nozzle 4d. The liquid storage unit 4a, the supply unit 4b, and the flow rate control unit 4c are provided outside the chamber 6.

[0062] The liquid storage part 4a stores the liquid 101. The liquid 101 having a temperature higher than the freezing point is stored in the liquid storage part 4a. The temperature of the liquid 101 stored in the liquid storage part 4a is, for example, room temperature (for example, 20°C).

[0063] The supply unit 4b is connected to the liquid storage unit 4a via a pipe. The supply unit 4b supplies the liquid 101 stored in the liquid storage unit 4a to the liquid nozzle 4d. The supply unit 4b can be, for example, a pump having resistance to the liquid 101.

[0064] The flow control unit 4c is connected to the supply unit 4b via a pipe. The flow control unit 4c controls the flow rate of the liquid 101 supplied by the supply unit 4b. The flow control unit 4c can be, for example, a flow control valve. In addition, the flow control unit 4c can also start and stop the supply of the liquid 101.

[0065] The liquid nozzle 4d is provided inside the chamber 6. The liquid nozzle 4d has a cylindrical shape. One end of the liquid nozzle 4d is connected to the flow control unit 4c via a pipe.

[0066] The other end of the liquid nozzle 4d (the ejection side of the liquid 101) is arranged above the surface 100b of the substrate 100 placed on the mounting table 2a. The liquid 101 ejected from the liquid nozzle 4d is supplied to the surface 100b of the substrate 100. The other end of the liquid nozzle 4d may be arranged near the rotation center of the substrate 100. In this way, the liquid 101 can be supplied to the approximate center of the surface 100b of the substrate 100. The liquid 101 supplied to the approximate center of the surface 100b of the substrate 100 spreads toward the peripheral side of the surface 100b of the substrate 100, and forms a liquid film having a substantially constant thickness on the surface 100b of the substrate 100.

[0067] In addition, if Figure 1 As shown, the opening (discharge port) of the other end of the liquid nozzle 4d may also be oriented toward the side surface of the rotation center side of the substrate 100 of the vibrating body 91 (main body 91a) described later. In this case, the liquid 101 ejected from the liquid nozzle 4d hits the side surface of the rotation center side of the substrate 100 of the vibrating body 91 (main body 91a) and is supplied to the surface 100b of the substrate 100. Therefore, the liquid 101 can be supplied to a wider area of ​​the surface 100b of the substrate 100, or the collision speed of the liquid 101 with the substrate 100 can be reduced. As a result, it is easy to form a liquid film on the entire surface 100b of the substrate 100.

[0068] The second liquid supply unit 5 supplies the liquid 102 to the surface 100b of the substrate 100. The liquid 102 is used in the thawing process described later. Therefore, the liquid 102 can be any liquid as long as it is not easy to react with the material of the substrate 100 and is not easy to remain on the surface 100b of the substrate 100 in the drying process described later. The liquid 102 can be, for example, water (e.g., pure water or ultrapure water), a liquid with water as the main component, a liquid with gas dissolved therein, etc., similarly to the liquid 101.

[0069] In this case, the liquid 102 may be the same as the liquid 101 or may be different from the liquid 101. When the liquid 102 is the same as the liquid 101, the second liquid supply unit 5 may be omitted. When the second liquid supply unit 5 is omitted, the first liquid supply unit 4 is also used in the thawing process described later. That is, the liquid 101 is also used in the thawing process.

[0070] In addition, the temperature of the liquid 102 can be set to a temperature higher than the freezing point of the liquid 101. For example, the temperature of the liquid 102 can be any temperature at which the frozen liquid 101 can be thawed. The temperature of the liquid 102 is, for example, about room temperature (e.g., 20° C.). In addition, if the temperature of the liquid 102 is set to a temperature exceeding room temperature, the thawing time can be shortened. When the temperature of the liquid 102 is set to a temperature exceeding room temperature, for example, a heater and a temperature control device are provided in the liquid storage section 5a described later.

[0071] In addition, when the liquid 101 is also used in the thawing process, if the temperature of the liquid 101 is set to a temperature exceeding normal temperature, the temperature of the liquid film formed before the cooling process described later will become higher. If the temperature of the liquid film becomes higher, the time required for the cooling process will become longer. Therefore, when the temperature of the liquid used in the thawing process is set to a temperature exceeding normal temperature, even if the liquid 102 is the same as the liquid 101, it is preferred to provide the second liquid supply unit 5.

[0072] The second liquid supply unit 5 includes, for example, a liquid storage unit 5 a , a supply unit 5 b , a flow rate control unit 5 c , a liquid nozzle 4 d , and a moving unit 5 d .

[0073] The liquid storage part 5a may be the same as the liquid storage part 4a. The supply part 5b may be the same as the supply part 4b. The flow control part 5c may be the same as the flow control part 4c.

[0074] In addition, Figure 1 In the example, the nozzle 4d is used as both the first liquid supply unit 4 and the second liquid supply unit 5. However, a liquid nozzle for supplying the liquid 101 and a liquid nozzle for supplying the liquid 102 may be provided separately. In addition, a hole for the liquid 101 (102) to flow may be provided in the vibrator 91 described later, and the vibrator 91 and the liquid nozzle may be integrated.

[0075] Hereinafter, a case where the liquid nozzle 4 d is used for supplying both the liquid 101 and the liquid 102 will be described.

[0076] The chamber 6 is box-shaped. A cover 6a is provided inside the chamber 6. The cover 6a receives the liquid 101 (102) supplied to the substrate 100 and discharged to the outside of the substrate 100 due to the rotation of the substrate 100. A partition plate 6b is provided inside the chamber 6. The partition plate 6b is provided between the outer surface of the cover 6a and the inner surface of the chamber 6.

[0077] A plurality of discharge ports 6c are provided on the side surface of the bottom surface side of the chamber 6. The used cooling gas 3a1, the liquid 101 and the liquid 102, and the air 8a supplied by the air supply unit 8 are discharged from the discharge ports 6c to the outside of the chamber 6. An exhaust pipe 6c1 is connected to the discharge port 6c. In addition, a discharge pipe 6c2 for discharging the liquid 101 and the liquid 102 is connected to the discharge port 6c.

[0078] The exhaust unit 7 is connected to the exhaust pipe 6c1. The exhaust unit 7 discharges the used cooling gas 3a1 and the air 8a. The exhaust unit 7 is, for example, a pump or a blower.

[0079] The air supply unit 8 is provided on the ceiling surface of the chamber 6. In addition, if the air supply unit 8 is on the ceiling side, it can also be provided on the side of the chamber 6. The air supply unit 8 includes, for example, an air supply unit such as a fan and a filter. The filter is, for example, a high efficiency air filter (High Efficiency Particulate Air Filter, HEPA) and the like.

[0080] The vibration unit 9 is used in the thawing process described later. In the thawing process, the vibration unit 9 transmits vibration to the liquid on the surface 100b of the substrate 100. In this case, the vibration unit 9 transmits vibration to the liquid on the surface 100b of the substrate 100 from a direction intersecting the surface 100b of the substrate 100. In the thawing process, the liquid on the surface 100b of the substrate 100 is the supplied liquid 102, the liquid 101 generated by the melting of the frozen film 101a described later, and the like.

[0081] The vibration section 9 includes, for example, a vibration body 91 , a vibrator 92 , a circuit 93 , a holding section 94 , and a cover 95 .

[0082] Figure 2 It is a schematic perspective view of the vibrating body 91 .

[0083] also, Figure 2 The arrows X, Y, and Z in the figure represent three directions that are orthogonal to each other. In addition, the X direction is a horizontal direction, and the Y direction is a horizontal direction that is orthogonal to the X direction.

[0084] like Figure 2 As shown, the vibrator 91 includes, for example, a main body 91a and a flange 91b. The main body 91a and the flange 91b are formed integrally. The vibrator 91 is made of a material that easily transmits vibration from the vibrator 92 and does not easily generate particles. The vibrator 91 is made of, for example, quartz.

[0085] The main body 91a is, for example, in the shape of a rectangular parallelepiped. The dimension L of the main body 91a in the X direction may be greater than the maximum dimension between the rotation center of the substrate 100 and the periphery of the substrate 100. For example, when the planar shape of the substrate 100 is circular, the dimension L of the main body 91a may be greater than the radius of the substrate 100. For example, when the planar shape of the substrate 100 is a quadrilateral, the dimension L of the main body 91a may be greater than half of the diagonal dimension of the substrate 100.

[0086] In the thawing process described later, the substrate 100 is constantly rotating. Therefore, as long as the dimension L of the main body 91a is larger than the maximum dimension between the rotation center of the substrate 100 and the periphery of the substrate 100, the vibration can be transmitted to the liquid on the entire surface 100b of the substrate 100 even if the vibrator 91 does not move during the thawing process.

[0087] In addition, a groove 91a1 is opened at the end 91aa of the main body 91a on the substrate 100 (mounting table 2a) side. At least one groove 91a1 can be provided. The groove 91a1 extends in the X direction. In the X direction, the groove 91a1 is opened on the side surfaces of both sides of the main body 91a. In the case of providing a plurality of grooves 91a1, the plurality of grooves 91a1 can be arranged in the Y direction.

[0088] The flange 91b is plate-shaped and is provided on the side of the main body 91a opposite to the end 91aa side. The flange 91b protrudes from the side of the main body 91a. The flange 91b may contact the upper surface of the holding portion 94. The flange 91b may also be omitted. If the flange 91b is provided, it is easy to position the vibrating body 91 when the vibrating body 91 is mounted on the holding portion 94, or to stabilize the posture of the vibrating body 91.

[0089] Next, the function and effect of the vibrating body 91 will be described.

[0090] Figure 3 It is a schematic diagram for illustrating the operation of the vibrating body 191 of the comparative example.

[0091] also, Figure 3 The arrows X, Y, Z and Figure 2 The same situation.

[0092] like Figure 3As shown, the end 191a of the vibrator 191 on the substrate 100 side is a flat surface. The end 191a is parallel to the surface 100b of the substrate 100. When the vibration 92a from the vibrator 92 propagates inside the vibrator 191 and is incident on the end 191a, the vibration 92a propagates from the vibrator 191 to the liquid 101 (102) on the surface 100b of the substrate 100 in a state where the propagation direction is almost unchanged. Therefore, the force in the direction (Z direction) pressing the surface 100b of the substrate 100 is likely to act on the contaminant 300 attached to the surface 100b of the substrate 100 or the contaminant 300 floating in the liquid 101 (102) on the surface 100b of the substrate 100. When the force in the direction pressing the surface 100b of the substrate 100 acts on the contaminant 300, it is difficult for the contaminant 300 to move in a direction parallel to the surface 100b of the substrate 100. Therefore, it is difficult to improve the removal rate of the contaminant 300.

[0093] Therefore, the portion of the vibrator 91 that contacts the liquid 101 (102) on the surface 100b of the substrate 100 has a region that is inclined relative to the end 91aa of the vibrator 91. In addition, when performing the thawing step described later, the end 91aa of the vibrator 91 is set to be approximately parallel to the surface 100b of the substrate 100. Therefore, the region that is inclined relative to the end 91aa of the vibrator 91 becomes a region that is inclined relative to the surface 100b of the substrate 100.

[0094] For example, Figure 2 As shown, a groove 91a1 having an inclined side surface 91a1a is provided at an end portion 91aa on the substrate 100 side of the vibrating body 91 (main body 91a).

[0095] Figure 4 It is a schematic diagram for illustrating the side surface 91a1a of the groove 91a1.

[0096] also, Figure 4 The arrows X, Y, Z and Figure 2 The same situation.

[0097] like Figure 4 As shown, the side surface 91a1a of the groove 91a1 in the Y direction is inclined relative to the end 91aa. In addition, one of the side surfaces 91a1a is inclined in the opposite direction to the side surface 91a1a facing it.

[0098] like Figure 4As shown, in the vibrating body 91 of the present embodiment, the vibration 92a from the vibrator 92 propagates inside the vibrating body 91 (main body 91a) and is incident on the side surface 91a1a of the groove 91a1. The propagation direction of the vibration 92a incident on the side surface 91a1a toward the liquid 101 (102) on the surface 100b of the substrate 100 changes according to the inclination angle of the side surface 91a1a.

[0099] Therefore, if Figure 4 As shown in FIG. 1 , the direction of the force acting on the contaminant 300 is likely to be a direction inclined relative to the surface 100b of the substrate 100. If a force in a direction inclined relative to the surface 100b of the substrate 100 is applied to the contaminant 300, a component force in a direction parallel to the surface 100b of the substrate 100 acts on the contaminant 300. Therefore, the contaminant 300 is likely to move in a direction parallel to the surface 100b of the substrate 100. If the contaminant 300 is likely to move in a direction parallel to the surface 100b of the substrate 100, the removal rate of the contaminant 300 can be improved.

[0100] In addition, Figure 4 In the example, the cross-sectional profile of the groove 91a1 is a trapezoid, but the cross-sectional profile of the groove 91a1 may be, for example, a triangle. In addition, the side surface of the groove 91a1 may be a flat surface or a curved surface. In the case of a curved surface, the angle between the tangent line of the curved surface and the extension line of the end 91aa of the vibrating body 91 is θ.

[0101] When the groove 91a1 having an inclined surface is provided at the end 91aa of the vibrator 91 , the inclined surface (eg, the side surface 91a1a ) of the groove 91a1 contacts the liquid 101 ( 102 ) and becomes a region inclined with respect to the end 91aa of the vibrator 91 .

[0102] Figure 5 : is a graph for illustrating the relationship between the angle θ and the vibration emission rate.

[0103] The vibration emission rate is set to "(energy of vibration emitted from the vibrator 91 / energy of vibration emitted from the vibrator 92)×100(%)".

[0104] according to Figure 5 It can be seen that if "20°≦θ≦87°" is set, the vibration 92a from the vibrator 92 can be efficiently transmitted to the liquid 101 (102). Therefore, the contaminant 300 is more likely to move in a direction parallel to the surface 100b of the substrate 100, so the removal rate of the contaminant 300 can be further improved.

[0105] In addition, if Figure 4As shown, the angle θ is the angle between the inclined region (the side surface 91a1a of the groove 91a1) and the extension line 91a1b of the end portion 91aa of the vibrating body 91.

[0106] Next, return Figure 1 , the vibrator 92 , the circuit 93 , the holding portion 94 , and the cover 95 provided in the vibration portion 9 are described.

[0107] The vibrator 92 is provided on the vibrator 91 (flange 91b). The vibrator 92 may be connected to the vibrator 91, for example. The vibrator 92 converts the applied voltage into a force. The vibrator 92 is, for example, a piezoelectric element.

[0108] The circuit 93 is electrically connected to the vibrator 92. The circuit 93 applies a voltage of a predetermined frequency to the vibrator 92. In this case, the frequency is, for example, about 1.6 MHz to 4 MHz.

[0109] The holding portion 94 holds the vibrator 91 at a predetermined position above the substrate 100. In this case, the distance between the end 91aa of the vibrator 91 (main body 91a) and the surface 100b of the substrate 100 is preferably set to 1.8 mm or less. In this way, it is easy to hold the liquid 101 (102) between the end 91aa of the vibrator 91 (main body 91a) and the surface 100b of the substrate 100. Therefore, the vibration can be efficiently transmitted from the vibrator 91 (main body 91a) to the liquid 101 (102).

[0110] The holding portion 94 is, for example, plate-shaped and has a hole that penetrates in the thickness direction. The main body 91a of the vibrator 91 can be inserted into the hole. When the main body 91a is inserted into the hole, the flange 91b of the vibrator 91 can be brought into contact with the upper surface of the holding portion 94. The flange 91b can be mounted on the holding portion 94 using a fastening member such as a screw.

[0111] In addition, the holding portion 94 may be configured to be movable in a direction parallel to the surface 100b of the substrate 100. For example, a rotation shaft may be provided near the end of the holding portion 94 on the opposite side to the side where the vibrating body 91 is provided, so that the holding portion 94 holding the vibrating body 91 can be rotated. For example, in the thawing process described later, the holding portion 94 can be rotated so that the vibrating body 91 is located above the surface 100b of the substrate 100, and in another process, the holding portion 94 can be rotated so that the vibrating body 91 is moved to a retreat position outside the substrate 100.

[0112] The cover 95 is provided on the upper surface of the holding part 94. The cover 95 covers the vibrator 92. The cover 95 can be attached to the holding part 94 using a fastening member such as a screw.

[0113] The controller 10 controls the operation of each component provided in the substrate processing apparatus 1. The controller 10 includes, for example, a computing unit such as a central processing unit (CPU) and a storage unit such as a semiconductor memory. The controller 10 is, for example, a computer. A control program for controlling the operation of each component provided in the substrate processing apparatus 1 is stored in the storage unit. The computing unit sequentially executes the preparatory process, the liquid film forming process, the cooling process, the thawing process, and the drying process described later based on the control program stored in the storage unit.

[0114] Figure 6 It is a schematic perspective view of a vibrating body 96 according to another embodiment.

[0115] also, Figure 6 The arrows X, Y, Z and Figure 2 The same situation.

[0116] like Figure 6 As shown, the vibrating body 96 includes, for example, a main body 96a and a flange 96b. The main body 96a and the flange 96b are formed integrally. The material of the vibrating body 96 can be the same as that of the vibrating body 91, for example.

[0117] The flange 96b may be formed to be the same as the flange 91b.

[0118] The dimension L1 of the main body 96a in the X direction can be set to be the same as the dimension L of the main body 91a. The side surface 96a1 of the main body 96a in the Y direction is connected to the end 96aa of the vibrating body 96 (main body 96a). The side surface 96a1 is inclined relative to the end 96aa of the vibrating body 96 (main body 96a). The angle θ1 between the side surface 96a1 of the main body 96a and the extension line 96ab of the end 96aa of the vibrating body 96 (main body 96a) can be set to be the same as the angle θ.

[0119] Figure 7 It is a schematic cross-sectional view for illustrating the operation of the vibrating body 96 .

[0120] like Figure 7 As shown, in the vibrating body 96, the vibration 92a from the vibrator 92 propagates inside the vibrating body 96 (main body 96a) and is incident on the side 96a1 of the main body 96a. The area of ​​the side 96a1 that is not in contact with the liquid 101 (102) (the area that is in contact with the outside air) is easily totally reflected by Snell's law. Therefore, in the area of ​​the side 96a1 that is not in contact with the liquid 101 (102), the vibration 92a propagates while repeatedly reflecting. For example, in Figure 7, the vibration 92a incident from the upper side to the side surface 96a1 inclined relative to the Z direction is a vibration after being reflected once by the side surface 96a1. The vibrator 96 (main body 96a) is in contact with the liquid 101 (102) near the end 96aa. For example, the vibrator 96 (main body 96a) is sometimes inserted into the liquid 101 (102) near the end 96aa. Due to the surface tension of the liquid 101 (102) or the flow of the liquid 101 (102) accompanying the rotation of the substrate 100, the liquid 101 (102) sometimes contacts the vibrator 96 (main body 96a) near the end 96aa. The vibration 92a incident on the part of the side 96a1 that contacts the liquid 101 (102) is easily emitted from the vibrator 96 (main body 96a) by Snell's law. In this case, the propagation direction of the vibration 92a changes corresponding to the tilt angle.

[0121] In addition, if Figure 7 As shown in FIG. 1 , there is also vibration 92a which is emitted from the vibrating body 96 (main body 96a) without being reflected from the side surface 96a1. Figure 7 In FIG. 1 , the vibration 92a incident on the side surface 96a1 from above and in a direction parallel to the Z direction is the vibration 92a emitted from the vibrator 96 (main body 96a) without being reflected by the side surface 96a1 once.

[0122] Therefore, if Figure 7 As shown in FIG. 1 , the direction of the force acting on the contaminant 300 tends to be inclined relative to the surface 100b of the substrate 100. Figure 4 As described in , the component force in the direction parallel to the surface 100b of the substrate 100 acts on the contaminant 300, so the contaminant 300 is easily moved in the direction parallel to the surface 100b of the substrate 100. If the contaminant 300 is easily moved in the direction parallel to the surface 100b of the substrate 100, the removal rate of the contaminant 300 can be improved.

[0123] In the case of the vibrator 96 of the present embodiment, the side surface 96 a 1 which is an inclined surface comes into contact with the liquid 101 ( 102 ), and becomes a region inclined with respect to the end portion 96 aa of the vibrator 96 .

[0124] The groove 91a1 having the inclined surface may be provided at the end 96aa of the vibrating body 96 (main body 96a). The side surface of the vibrating body 91 (main body 91a) may be provided as an inclined surface.

[0125] Figure 8 It is a schematic perspective view of a vibrating body 97 for illustrating another embodiment.

[0126] like Figure 8As shown, the vibrating body 97 has a side surface 97a that is inclined relative to the end of the vibrating body 97. For example, the vibrating body 97 can be set to be obtained by reducing the size L1 of the vibrating body 96. In addition, the vibrating body 97 can also be obtained by reducing the size L of the vibrating body 91. The size L3 of the vibrating body 97 can be smaller than the minimum size between the rotation center of the substrate 100 and the periphery of the substrate 100. If so, the miniaturization or cost reduction of the vibrating body 97 can be achieved. Among them, if the size L3 is reduced, the vibration will be transmitted to a part of the liquid 101 (102). Therefore, it is necessary to move the position of the vibrating body 97 between the rotation center of the substrate 100 and the periphery of the substrate 100. For example, the vibrating body 97 can be mounted on a holding portion that can move in a direction parallel to the surface 100b of the substrate 100.

[0127] Next, the operation of the substrate processing apparatus 1 will be further described.

[0128] Fig. 9 It is a timing chart for illustrating the operation of the substrate processing apparatus 1 .

[0129] Fig.10 1 is a graph for illustrating the temperature change of the liquid 101 supplied to the surface 100 b of the substrate 100 .

[0130] also, Fig. 9 and Fig.10 The substrate 100 is a 6025 quartz (Qz) substrate (152 mm×152 mm×6.35 mm), and the liquid 101 and the liquid 102 are pure water.

[0131] In addition, the liquid 102 for thawing is set to be the same as the liquid 101 for forming the liquid film. Fig. 9 and Fig.10 In the thawing process, liquid 101 is also used.

[0132] First, the substrate 100 is carried into the chamber 6 through a carry-in / carry-out port (not shown) of the chamber 6. The carried-in substrate 100 is placed and supported on the plurality of support portions 2a1 of the mounting table 2a.

[0133] After the substrate 100 is supported on the mounting table 2a, as shown in FIG. Fig. 9 and Fig.10 As shown, a freeze cleaning process including a preparatory process, a liquid film forming process, a cooling process, a thawing process and a drying process is performed.

[0134] First, if Fig. 9 and Fig.10 Perform the preparatory steps as shown.

[0135] In the preparatory process, the controller 10 controls the supply unit 4b and the flow control unit 4c to supply a predetermined flow rate of the liquid 101 to the surface 100b of the substrate 100. In addition, the controller 10 controls the flow control unit 3c to supply a predetermined flow rate of the cooling gas 3a1 to the back side 100a of the substrate 100. In addition, the controller 10 controls the drive unit 2c to rotate the substrate 100 at the second rotation speed.

[0136] Here, when the cooling gas 3a1 is supplied to cool the environment inside the chamber 6, frost including dust in the environment adheres to the substrate 100, which may cause contamination. Therefore, in the preparatory process, the liquid 101 is continuously supplied to the surface 100b of the substrate 100. That is, in the preparatory process, the substrate 100 is cooled and frost is prevented from adhering to the surface 100b of the substrate 100.

[0137] The second rotation speed is, for example, about 50 rpm to 500 rpm. The flow rate of the liquid 101 is, for example, about 0.1 L / min to 1.0 L / min. The flow rate of the cooling gas 3a1 is, for example, about 40 NL / min to 200 NL / min. The process time of the preparatory process is about 1800 seconds.

[0138] The temperature of the liquid film in the preliminary step is substantially the same as the temperature of the supplied liquid 101 because the liquid 101 is continuously supplied. For example, when the temperature of the supplied liquid 101 is approximately room temperature (20°C), the temperature of the liquid film is approximately room temperature (20°C).

[0139] Next, if Fig. 9 and Fig.10 The liquid film forming process is performed as shown.

[0140] In the step of forming the liquid film, the supply of the liquid 101 supplied in the preparatory step is stopped. Since the rotation of the substrate 100 is maintained, the liquid 101 on the surface 100b of the substrate 100 is discharged. In this case, the rotation speed of the substrate 100 is decelerated to a first rotation speed that can suppress the deviation of the thickness of the liquid film due to the centrifugal force. The first rotation speed is, for example, 0 rpm to 50 rpm.

[0141] After the rotation speed of the substrate 100 is set to the first rotation speed, a predetermined amount of liquid 101 is supplied to the substrate 100 to form a liquid film. The thickness of the liquid film (the thickness of the liquid film during the cooling step) is, for example, about 300 μm to 1300 μm.

[0142] In addition, during the liquid film forming process, the flow rate of the cooling gas 3a1 is maintained at the same flow rate as that in the preliminary process. In the preliminary process, the in-plane temperature of the substrate 100 is substantially uniform. In the liquid film forming process, if the flow rate of the cooling gas 3a1 is maintained at the same flow rate as that in the preliminary process, the in-plane temperature of the substrate 100 can be maintained in a substantially uniform state.

[0143] Next, if Fig. 9 and Fig.10 The cooling process is performed as shown.

[0144] In addition, in the present specification, the cooling process includes a "supercooling process", a "freezing process (solid-liquid phase)" and a "freezing process (solid phase)". The "supercooling process" is a process in which the liquid 101 becomes a supercooled state, and before the supercooled liquid 101 begins to freeze. In the supercooling process, only the liquid 101 exists on the entire surface 100b of the substrate 100. The "freezing process (solid-liquid phase)" is a process in which the supercooled liquid 101 begins to freeze, and before the freezing is completely completed. In the freezing process (solid-liquid phase), the liquid 101 and the substance formed by the freezing of the liquid 101 exist on the entire surface 100b of the substrate 100. The "freezing process (solid phase)" is a process after the liquid 101 is completely frozen. In the freezing process (solid phase), only the substance formed by the freezing of the liquid 101 exists on the entire surface 100b of the substrate 100. In addition, in the present specification, the liquid film that is completely frozen is referred to as a frozen film 101a.

[0145] In addition, sometimes after the formation process of the liquid film, the freezing process (solid-liquid phase) is performed without the supercooling process, and the thawing process is performed before the frozen film 101a is formed. In addition, sometimes after the formation process of the liquid film, the freezing process (solid-liquid phase), the freezing process (solid phase) and the thawing process are performed in sequence without the supercooling process. That is, the supercooling process and the freezing process (solid phase) are sometimes omitted. Even if the supercooling process and the freezing process (solid phase) are omitted, the contaminant 103 can be separated from the surface 100b of the substrate 100. If the supercooling process and the freezing process (solid phase) are omitted, the cooling process can be simplified, and the time required for the cooling process can be shortened.

[0146] In the supercooling process, by continuously supplying the cooling gas 3a1 to the back side 100a of the substrate 100, the temperature of the liquid film on the surface 100b of the substrate 100 is further reduced compared to the temperature of the liquid film in the liquid film forming process, and becomes a supercooled state. In this case, if the cooling speed of the liquid 101 is too fast, the liquid 101 will not become a supercooled state but will freeze immediately. Therefore, the controller 10 controls at least one of the rotation speed of the substrate 100, the flow rate of the cooling gas 3a1, and the flow rate of the liquid 101, so that the liquid 101 on the surface 100b of the substrate 100 becomes a supercooled state.

[0147] The control condition for the liquid 101 to be in a supercooled state is affected by the size of the substrate 100, the viscosity of the liquid 101, the specific heat of the cooling gas 3a1, etc. Therefore, the control condition for the liquid 101 to be in a supercooled state is preferably appropriately determined by performing experiments or simulations.

[0148] In addition, as described above, the supercooling process may not be performed. In this case, the controller 10 controls at least one of the rotation speed of the substrate 100, the flow rate of the cooling gas 3a1, and the flow rate of the liquid 101 to accelerate the cooling rate of the liquid 101. By accelerating the cooling rate of the liquid 101, the freezing process (solid-liquid phase) is performed without the supercooling process.

[0149] When the supercooled liquid 101 begins to freeze, the process is transferred from the supercooling process to the freezing process (solid-liquid phase). In the supercooled state, the liquid 101 begins to freeze due to, for example, the temperature of the liquid film, the presence of contaminants 300 such as particles or bubbles, vibration, etc. For example, in the presence of contaminants 300 such as particles, when the temperature T of the liquid 101 becomes above -35°C and below -20°C, the liquid 101 begins to freeze. In addition, the liquid 101 may also begin to freeze by applying vibration to the liquid 101 by causing the substrate 100 to rotate or change, etc.

[0150] As described above, in the supercooled liquid 101, some starting points where freezing begins become contaminants 300. The contaminants 300 that become the starting points where freezing begins are collected in the frozen film 101a. Therefore, if the supercooling process is performed, the removal rate of the contaminants 300 can be improved. In addition, it is considered that the contaminants 300 attached to the surface 100b of the substrate 100 are separated by pressure waves accompanying the volume change when the liquid 101 changes into a solid, or physical forces accompanying the volume increase.

[0151] Next, if Fig. 9 and Fig.10 Perform the thawing process as shown.

[0152] The start of the thawing process can be determined, for example, based on the time elapsed from the start of the preparatory process or the start of the freezing process (solid-liquid phase). The length of the elapsed time determines whether the thawing starts in the middle of the freezing process (solid-liquid phase) or in the middle of the freezing process (solid phase). In addition, the surface state of the liquid 101 (frozen film 101a) on the surface 100b of the substrate 100 can be detected by a detection unit, etc., and the time point for the start of thawing can be determined based on the change in the surface state.

[0153] The details of the thawing process will be described later.

[0154] Next, if Fig. 9and Fig.10 The drying process is performed as shown.

[0155] In the drying process, the controller 10 controls the supply unit 4b and the flow control unit 4c to stop the supply of the liquid 101. In addition, when the liquid 101 and the liquid 102 are different liquids, the controller 10 controls the supply unit 5b and the flow control unit 5c to stop the supply of the liquid 102.

[0156] In addition, the controller 10 controls the flow rate control unit 3c to stop the supply of the cooling gas 3a1.

[0157] The controller 10 controls the circuit 93 to stop the vibration 92 a. The controller 10 controls the holder 94 to move the vibrator 91 ( 96 , 97 ) to a retracted position outside the substrate 100 .

[0158] In addition, the controller 10 controls the driving unit 2c to set the rotation speed of the substrate 100 to a fourth rotation speed that is faster than the rotation speed (the third rotation speed described later) of the substrate 100 in the thawing process. If the rotation of the substrate 100 becomes faster, the drying time of the substrate 100 can be shortened. In addition, the fourth rotation speed is not particularly limited as long as it is a rotation speed that can achieve drying.

[0159] By performing the above, the freezing and cleaning process is completed. In addition, the freezing and cleaning process can also be performed multiple times.

[0160] The substrate 100 after freeze cleaning is carried out of the chamber 6 through a carry-in / carry-out port (not shown) of the chamber 6 .

[0161] Next, the thawing step will be further described.

[0162] In the thawing process, the controller 10 controls the supply unit 4b and the flow control unit 4c to supply the liquid 101 to the frozen film 101a. If the liquid 101 and the liquid 102 are different, the controller 10 controls the supply unit 5b and the flow control unit 5c to supply the liquid 102 to the frozen film 101a.

[0163] The flow rate of the liquid 101 or the liquid 102 is not particularly limited as long as it is a flow rate that can achieve thawing. The temperature of the liquid 101 or the liquid 102 can be set to room temperature (e.g., 20° C.). In addition, as described above, the temperature of the liquid 101 used to form the liquid film can be set to room temperature (e.g., 20° C.), and the temperature of the liquid 102 used for thawing can be set to a temperature higher than room temperature.

[0164] In addition, the controller 10 controls the driving unit 2c to increase the rotation speed of the substrate 100 from the first rotation speed to the third rotation speed. The third rotation speed is, for example, about 200 rpm to 700 rpm. If the rotation of the substrate 100 becomes faster, the liquid 101 and the substance formed by the freezing of the liquid 101 can be thrown off by centrifugal force. Therefore, it is easy to discharge the liquid 101 and the substance formed by the freezing of the liquid 101 from the surface 100b of the substrate 100. At this time, the contaminant 103 separated from the surface 100b of the substrate 100 is also discharged together with the liquid 101 and the substance formed by the freezing of the liquid 101.

[0165] In addition, the controller 10 controls the circuit 93 to cause the vibrator 92 to generate vibration 92a. The generated vibration 92a is transmitted to the liquid 101 (102) via the vibrating body 91 (96, 97). Fig. 9 As shown, the time point of transmitting the vibration 92a may be the same as the time point of starting to supply the liquid 101 (102) for thawing, as shown in FIG. Fig. 9 As shown by the dotted line, it may also be after the start of supplying the liquid 101 (102). The time point at which the vibration 92a is stopped may be the same as the time point at which the supply of the liquid 101 (102) for thawing is stopped, as shown in FIG. Fig. 9 As shown by the dotted line, it may be before the supply of the liquid 101 (102) is stopped.

[0166] (Substrate Processing Apparatus According to Second Embodiment)

[0167] The substrate processing apparatus 200 according to the second embodiment can be used, for example, when spin cleaning the substrate 100 .

[0168] Fig.11 It is a schematic diagram for illustrating a substrate processing apparatus 200 according to the second embodiment.

[0169] like Fig.11 As shown, the substrate processing apparatus 200 includes, for example, a mounting portion 202 , a liquid supply portion 204 , a chamber 206 , a vibration portion 9 , and a controller 207 .

[0170] The placement unit 202 includes, for example, a placement table 202 a , a rotation shaft 202 b , and a driving unit 202 c .

[0171] The mounting table 202a can be set to be the same as the mounting table 2a. However, it is not necessary to set the hole 2aa in the mounting table 202a. A plurality of support parts 202d for supporting the substrate 100 are provided on one main surface of the mounting table 202a. When the substrate 100 is supported by the plurality of support parts 202d, the surface 100b (the surface on the cleaning side) of the substrate 100 faces the side opposite to the mounting table 202a.

[0172] One end of the rotating shaft 202b is provided on the side of the mounting table 202a opposite to the side where the supporting portion 202d is provided. The other end of the rotating shaft 202b is provided outside the chamber 206. The rotating shaft 202b is connected to the driving portion 202c outside the chamber 206.

[0173] The driving unit 202c is disposed outside the chamber 206. The driving unit 202c is connected to the rotation shaft 202b. The rotation force of the driving unit 202c is transmitted to the mounting table 202a via the rotation shaft 202b. Therefore, the mounting table 202a and the substrate 100 mounted on the mounting table 202a can be rotated by the driving unit 202c.

[0174] In addition, the driving unit 202c can change not only the start and stop of the rotation but also the rotation speed (rotation speed). The driving unit 202c can include a control motor such as a servo motor, for example.

[0175] The liquid supply unit 204 includes, for example, a liquid container 204 a , a supply unit 204 b , a flow rate control unit 204 c , and a liquid nozzle 4 d . The liquid container 204 a , the supply unit 204 b , and the flow rate control unit 204 c are provided outside the chamber 206 .

[0176] The liquid storage part 204a stores the liquid 104. The liquid 104 can be, for example, a sulfuric acid-hydrogen peroxide mixture (SPM), an ammonia-hydrogen peroxide mixture (APM), SC-1, a hydrochloric acid-hydrogen peroxide mixture (HPM), dihydrofuran (DHF), O3 (ozone) water, NH4OH, tetramethyl ammonium hydroxide (TMAH), a surfactant, etc. However, the liquid 104 is not limited to the examples.

[0177] The supply unit 204b supplies the liquid 104 stored in the liquid storage unit 204a toward the liquid nozzle 4d. The supply unit 204b can be, for example, a pump having resistance to the liquid 104.

[0178] The flow control unit 204c controls the flow rate of the liquid 104 supplied by the supply unit 204b. The flow control unit 204c can be, for example, a flow control valve. In addition, the flow control unit 204c can also start and stop the supply of the liquid 104.

[0179] The chamber 206 is box-shaped. A cover 206a is provided inside the chamber 206. The cover 206a receives the liquid 104 supplied to the substrate 100 and discharged to the outside of the substrate 100 due to the rotation of the substrate 100. The cover 206a is installed inside the chamber 206 through a holding portion 206b. The cover 206a is provided with a discharge port 206a1 for discharging the used liquid 104 discharged from the substrate 100 to the outside of the cover 206a. In addition, a discharge port 206c is provided on the bottom surface of the chamber 206 for discharging the used liquid 104 discharged from the cover 206a to the outside of the chamber 206.

[0180] The controller 207 controls the actions of the various components provided in the substrate processing apparatus 200. The controller 207 may be the same as the controller 10. A control program for controlling the actions of the various components provided in the substrate processing apparatus 200 is stored in the storage unit of the controller 207. The control program stored in the storage unit of the controller 10 is a program for performing freeze cleaning. In contrast, the control program stored in the storage unit of the controller 207 is a program for performing spin cleaning. In addition, the order or conditions of spin cleaning can be applied to known techniques, so detailed description is omitted.

[0181] The vibrating portion 9 transmits vibration to the liquid 104 on the surface 100b of the substrate 100. The effect of the vibration portion 9 transmitting vibration to the liquid 104 can be set to be the same as the effect of the vibration portion 9 transmitting vibration to the liquid 101 (102). Therefore, the contaminant 300 easily moves in a direction parallel to the surface 100b of the substrate 100. If the contaminant 300 easily moves in a direction parallel to the surface 100b of the substrate 100, the removal rate of the contaminant 300 can be improved. In addition, any one of the vibrating body 91, the vibrating body 96 and the vibrating body 97 can also be used.

[0182] In addition, in the substrate processing apparatus 1 and the substrate processing apparatus 200 , although the vibrators 91 and 97 are provided on the front surface 100 b side of the substrate 100 , the vibrators may be provided on the back surface 100 a side of the substrate 100 .

[0183] (Substrate processing apparatus according to third embodiment)

[0184] Fig.12 It is a schematic diagram for illustrating a substrate processing apparatus 210 according to the third embodiment.

[0185] like Fig.12 As shown, the substrate processing apparatus 210 includes, for example, a vibrating unit 219 , a driving unit 212 , a liquid supply unit 214 , a chamber 216 , and a controller 217 .

[0186] The vibration section 219 includes, for example, a vibration body 219 a , a support section 219 b , a vibrator 219 c , and a circuit 93 .

[0187] The vibrating body 219a is provided on the back side 100a of the substrate 100. The vibrating body 219a is, for example, plate-shaped. The vibrating body 219a is, for example, rotatably provided inside the chamber 216. The shape of the vibrating body 219a can be, for example, the same as the shape of the mounting table 2a. A hole 219a1 penetrating in the thickness direction is provided at the center portion of the vibrating body 219a. In addition, the vibrating body 219a is formed of a material that is easy to transmit the vibration from the vibrator 219c and is not easy to generate particles. The vibrating body 219a is, for example, formed of quartz.

[0188] A plurality of support portions 219b are provided on one main surface of the vibrating body 219a. The support portions 219b may be the same as the support portions 2a1.

[0189] The vibrator 219c is disposed on the other main surface of the vibrator 219a. The vibrator 219c may be connected to the other main surface of the vibrator 219a. The vibrator 219c is, for example, ring-shaped and may be disposed coaxially with the vibrator 219a. The vibrator 219c converts an applied voltage into a force. The vibrator 219c is, for example, a piezoelectric element.

[0190] In addition, since the vibrator 219 c rotates together with the vibrating body 219 a , the vibrator 219 c and the circuit 93 may be electrically connected via a slip ring or the like, for example.

[0191] The driving unit 212 includes, for example, a rotating shaft 212 a and a rotation driving unit 212 b .

[0192] One end of the rotating shaft 212a is disposed on the side of the vibrating body 219a opposite to the side where the supporting portion 219b is disposed. The other end of the rotating shaft 212a is disposed outside the chamber 216. The rotating shaft 212a is connected to the rotation driving portion 212b outside the chamber 216.

[0193] The rotation driving unit 212b is disposed outside the chamber 216. The rotation driving unit 212b is connected to the rotation shaft 212a. The rotation force of the rotation driving unit 212b is transmitted to the vibrating body 219a via the rotation shaft 212a. Therefore, the vibrating body 219a and the substrate 100 mounted on the vibrating body 219a can be rotated by the rotation driving unit 212b.

[0194] The rotation drive unit 212b can change not only the start and stop of the rotation but also the rotation speed (rotation speed). The rotation drive unit 212b can include a control motor such as a servo motor, for example.

[0195] The liquid supply unit 214 includes, for example, a liquid storage unit 204 a , a supply unit 204 b , a flow rate control unit 204 c , and a liquid nozzle 214 d .

[0196] One end of the liquid nozzle 214d may be disposed, for example, inside the hole 219a1 of the vibrating body 219a. The other end of the liquid nozzle 214d may be connected to the flow control unit 204c outside the chamber 216, for example.

[0197] The liquid nozzle 214d may also be integrated with the vibrating body 219a. That is, the vibrating body 219a may also be a part of the liquid nozzle 214d. In this case, the liquid nozzle 214d rotates together with the vibrating body 219a, so the liquid nozzle 214d can be connected to the flow control unit 204c via a rotary joint or the like.

[0198] The chamber 216 may be configured to be the same as the chamber 206 , for example.

[0199] The controller 217 controls the operation of each component provided in the substrate processing apparatus 210. The controller 217 may be the same as the controller 10 described above.

[0200] Next, the effects of the substrate processing apparatus 210 will be described.

[0201] The substrate processing apparatus 210 cleans the back surface 100a of the substrate 100. The liquid 104 is supplied from the liquid nozzle 214d to between the back surface 100a of the substrate 100 and the vibrator 219a. The space between the back surface 100a of the substrate 100 and the vibrator 219a is filled with the liquid 104.

[0202] The vibration part 219 (vibrator 219a) transmits vibration to the liquid 104 between the back surface 100a of the substrate 100 and the vibration body 219a. Therefore, the same effect as the effect of transmitting vibration to the liquid 101 (102) can be achieved. That is, the contaminant 300 is easy to move in a direction parallel to the back surface 100a of the substrate 100. If the contaminant 300 is easy to move in a direction parallel to the back surface 100a of the substrate 100, the removal rate of the contaminant 300 can be improved.

[0203] In addition, the groove 91 a 1 may be provided on the surface of the vibrating body 219 a that faces the back surface 100 a of the substrate 100 .

[0204] Fig.13 It is a schematic diagram for illustrating the side surface 91a1a of the groove 91a1 provided in the vibrating body 219a.

[0205] also, Fig.13 The arrows X, Y, Z and Figure 4 The same situation.

[0206] The groove 91a1 provided in the vibrating body 219a can be formed in the same shape and the same inclination as the groove 91a1 provided in the vibrating body 91. Therefore, the same effects as those of the vibrating body 91 can be obtained.

[0207] In addition, the groove 91a1 provided in the vibrating body 219a may be provided concentrically with the hole 219a1 of the vibrating body 219a as the center.

[0208] In addition, Fig.13 In the example, the cross-sectional profile of the groove 91a1 is a trapezoid, but the cross-sectional profile of the groove 91a1 may be, for example, a triangle. In addition, the side surface of the groove 91a1 may be a flat surface or a curved surface. In the case of a curved surface, the angle between the tangent line of the curved surface and the extension line of the end 91aa of the vibrating body 91 may be θ.

[0209] In addition, the opening of the hole 219a1 of the vibrating body 219a on the substrate 100 side may also be concave. A groove 91a1 may be provided on the inner wall of the concave opening of the hole 219a1. The liquid 104 supplied from the hole 219a1 is accumulated in the concave opening portion, and at least a part of the back surface 100a of the substrate 100 is immersed in the liquid 104. In this way, it is easy to retain the supplied liquid 104.

[0210] In addition, the vibration part 219 and the vibration part 9 may be provided in addition to the vibration body 219 a. That is, the vibration part may be provided on at least one of the surface 100 b side of the substrate 100 and the back surface 100 a side of the substrate 100 .

[0211] In addition, the placement unit may not rotate, and in this case, the drive unit 212 may be omitted.

[0212] The above embodiments are exemplified. However, the present invention is not limited to these descriptions. As long as the features of the present invention are present, embodiments formed by adding, deleting or designing the above embodiments by those skilled in the art, or embodiments formed by adding, omitting or changing the conditions of the above embodiments are also included in the scope of the present invention.

[0213] For example, the shape, size, number, arrangement, etc. of each component included in the substrate processing apparatus 1 , the substrate processing apparatus 200 , and the substrate processing apparatus 210 are not limited to the examples and can be appropriately changed.

[0214] Description of Figure Numbers

[0215] 1: Substrate processing equipment

[0216] 2: Loading part

[0217] 2a: Loading table

[0218] 3: Cooling section

[0219] 3a1: Cooling gas

[0220] 4: First liquid supply unit

[0221] 4d: Liquid Nozzle

[0222] 5: Second liquid supply unit

[0223] 6: Chamber

[0224] 9: Vibration part

[0225] 10: Controller

[0226] 91: Vibrating body

[0227] 91a: Subject

[0228] 91aa: End

[0229] 91a1: Slot

[0230] 91a1a: Side

[0231] 91a1b: Extension cord

[0232] 92: Vibrator

[0233] 92a: Vibration

[0234] 93: Circuit

[0235] 94: Maintaining Department

[0236] 96: Vibrating body

[0237] 96a: Subject

[0238] 96aa: end

[0239] 96ab: Extension cord

[0240] 96a1: Side

[0241] 97: Vibrating body

[0242] 97a: Side

[0243] 100: Substrate

[0244] 100a: Back

[0245] 100b: Surface

[0246] 101: Liquid

[0247] 101a: Frozen Film

[0248] 102: Liquid

[0249] 300: Pollutants

[0250] 200: Substrate processing equipment

[0251] 202: Loading section

[0252] 204: Liquid supply unit

[0253] 206: Chamber

[0254] 207: Controller

[0255] 210: Substrate processing equipment

[0256] 212: Drive unit

[0257] 214: Liquid supply unit

[0258] 216: Chamber

[0259] 219: Vibration Department

[0260] 217: Controller

[0261] θ: Angle

[0262] θ1: Angle

Claims

1. A vibrating body for cleaning a substrate, characterized in that: The portion of the vibrator that contacts the liquid on the surface of the substrate has a region that is inclined relative to the end of the vibrator that faces the substrate. When the angle between the inclined region and the extension line of the end portion of the vibrating body is θ, the following formula is satisfied. 20°≦θ≦87° 2. The vibrating body according to claim 1, characterized in that The inclined region is at least one of a side surface of a groove opened at an end portion of the vibrating body and a side surface of the vibrating body connected to the end portion of the vibrating body.

3. The vibrating body according to claim 1 or 2, characterized in that: The cleaning of the substrate may be freeze cleaning of the substrate or spin cleaning of the substrate.

4. A substrate processing device, characterized in that: include: A loading portion capable of rotating a loaded substrate; a liquid supply unit capable of supplying liquid to a first surface of the substrate which is opposite to the mounting unit side; as well as The vibrating body according to claim 1, The vibrator transmits vibration to the liquid on the first surface of the substrate from a direction intersecting the first surface of the substrate.

5. The substrate processing device according to claim 4, characterized in that: The inclined region of the vibrator contacts the liquid on the first surface of the substrate.

6. The substrate processing device according to claim 4 or 5, characterized in that: Also includes: Cooling unit, The cooling unit can supply a cooling gas for cooling the liquid on the first surface of the substrate.

7. A substrate processing device, characterized in that: include: A mounting portion capable of mounting a substrate; a liquid supply unit capable of supplying liquid to the second surface of the substrate on the mounting portion side; as well as The vibrating body according to claim 1, The vibrator transmits vibration to the liquid on the second surface of the substrate from a direction intersecting the second surface of the substrate.

8. The substrate processing device according to claim 7, characterized in that: The liquid is supplied to the second surface on the mounting portion side of the substrate via the vibrator.

Images