Method for regulating and controlling electron mobility of bismuth triiodide

Abstract

The invention relates to a method for regulating and controlling the electron mobility of bismuth triiodide, which comprises the following steps of: adding a bismuth triiodide sample into a diamond anvil cell device in the diamond anvil cell device at room temperature, applying pressure to the interior of a sample cavity by using the diamond anvil cell device, and regulating and controlling the electron mobility of the bismuth triiodide by controlling the applied pressure. According to the method for regulating and controlling the electron mobility of the bismuth triiodide provided by the technical scheme of the invention, the electron mobility of the bismuth triiodide is further controlled by controlling the pressure, a new direction is provided for developing a transistor with better performance and lower power consumption from the bismuth triiodide, and the method is suitable for large-scale popularization and application. The method has important significance for expanding the functional characteristics and the application field of bismuth triiodide.

Description

Technical Field

[0001] The invention belongs to the technical field of high voltage regulation of electrical properties, and specifically relates to a method for regulating the electron mobility of bismuth triiodide. Background Art

[0002] As a layered semiconductor material, bismuth triiodide has anisotropy in certain physical properties and weak interactions between layers. Its electrical properties are between conductors and insulators, which makes it possible to regulate its performance in specific applications. This makes it have potential application value in the field of electronic devices.

[0003] Bismuth triiodide can maintain good chemical and physical stability under certain environmental conditions, which is very important for the long-term reliable operation of the device. Higher electron mobility means that carriers can move faster under the action of the electric field, thereby improving the response speed and efficiency of the device. It can be used to prepare semiconductor devices such as transistors and has potential application prospects in future large-scale integrated circuits. Pressure, as a thermodynamic parameter independent of temperature and composition, can provide a new dimension for material research. Many substances will produce novel physical properties under high pressure that do not exist under normal pressure. Therefore, the electron mobility of bismuth triiodide can be controlled by applying pressure, which is of great significance for expanding the functional properties and application fields of bismuth triiodide. Summary of the invention

[0004] The purpose of the present invention is to provide a method for regulating the electron mobility of bismuth triiodide (hereinafter referred to as BiI3) in view of the deficiencies of the prior art.

[0005] The technical solution of the present invention is as follows: A method for regulating the electron mobility of bismuth triiodide comprises the following steps:

[0006] S1. In a diamond anvil apparatus at room temperature, pre-press a steel sheet as a gasket;

[0007] S2, adding the sample to be regulated into the diamond anvil device to prepare a sample cavity;

[0008] S3. Applying pressure to the interior of the sample chamber using the diamond anvil cell device, wherein the pressure inside the sample chamber is 30.6-42.3 GPa, and the electron mobility of bismuth triiodide is regulated by controlling the applied pressure.

[0009] Furthermore, in step S3, the pressure is calibrated by using the ruby ​​fluorescence peak calibration method.

[0010] Furthermore, in step S1, the gasket is further subjected to insulation treatment, and the specific steps are as follows:

[0011] A hole is punched at the center of the indentation of the pre-pressed gasket to form an indentation hole, and insulating powder is ground and filled into the indentation hole.

[0012] Furthermore, the insulating powder is Al2O3.

[0013] Beneficial Effects

[0014] Compared with the known public technology, the technical solution provided by the present invention has the following beneficial effects:

[0015] The present invention provides a new method for regulating the electron mobility of bismuth triiodide. By studying the change of the electron mobility of BiI3 under high pressure, the law of the change of the electron mobility of BiI3 by pressure is obtained. By controlling the pressure, the carrier concentration and mobility of BiI3 are controlled, the electrical properties of BiI3 can be significantly optimized, and the application scope of BiI3 in the fields of photodetectors, high-efficiency field effect transistors, and pressure sensors is further improved. This is of great significance for expanding the functional characteristics and application fields of BiI3. At the same time, the present invention also has the advantages of simple operation and controllability. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 The present invention provides a schematic diagram of the variation of the Hall coefficient of the BiI3 material with pressure under the pressure conditions of Examples 1 to 3.

[0017] Figure 2 The present invention provides a schematic diagram of the variation of the carrier concentration of the BiI3 material with the pressure under the pressure conditions of Examples 1 to 3.

[0018] Figure 3 The present invention provides a schematic diagram of the variation of the electron mobility of the BiI3 material with pressure under the pressure conditions of Examples 1 to 3. DETAILED DESCRIPTION

[0019] The following is a further detailed description of the implementation of the present invention in conjunction with the accompanying drawings and embodiments. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0020] In order to achieve the effect of the present invention, the present invention is further described below in conjunction with embodiments.

[0021] Embodiment 1:

[0022] Embodiment 1 of the present invention provides a method for regulating the electron mobility of BiI3, comprising the following steps:

[0023] S1. Assemble a diamond anvil device that generates pressure, i.e., a press, at room temperature, and level and center the assembled press. In the diamond anvil device, after pressing out a diamond anvil mark at the center of a T301 steel sheet, use the T301 steel sheet with the indentation as a gasket, and use a laser punching device to punch a hole at the same center of the gasket indentation to form an indentation hole, grind the insulating powder and fill it into the indentation hole, pressurize the insulating powder, and then punch the insulating powder to prepare a sample cavity. In the embodiment of the present invention, the insulating powder is Al2O3.

[0024] S2. Add the BiI3 sample to be regulated into the diamond anvil cell device to prepare the sample cavity.

[0025] S3. Use the diamond anvil device to apply pressure to the inside of the sample chamber. The pressure inside the sample chamber varies in the range of 30.6 to 32.6 GPa. By controlling the applied pressure, the electron mobility of BiI3 is regulated. Apply pressures of 30.6 GPa, 31.3 GPa and 32.6 GPa to the sample in the sample chamber in turn. Then calibrate the pressure applied to the sample under the laser. Turn on the circulating water device; place the DAC device with the packaged sample on the bracket between the two electromagnets, adjust the distance between the two electromagnets, and tighten the fixing bolts of the two electromagnets; connect the four electrodes on the DAC device to the Hall card in a specified order. Obtain the changing relationship between the Hall coefficient, carrier concentration and electron mobility of the BiI3 sample.

[0026] Embodiment 2:

[0027] Embodiment 2 of the present invention provides a method for regulating the electron mobility of BiI3, comprising the following steps:

[0028] S1. Assemble a diamond anvil device that generates pressure, i.e., a press, at room temperature, and level and center the assembled press. In the diamond anvil device, after pressing out a diamond anvil mark at the center of a T301 steel sheet, use the T301 steel sheet with the indentation as a gasket, and use a laser punching device to punch a hole at the same center of the gasket indentation to form an indentation hole, grind the insulating powder and fill it into the indentation hole, pressurize the insulating powder, and then punch the insulating powder to prepare a sample cavity. In the embodiment of the present invention, the insulating powder is Al2O3.

[0029] S2. Add the BiI3 sample to be regulated into the diamond anvil cell device to prepare the sample cavity.

[0030] S3. Use the diamond anvil device to apply pressure to the inside of the sample chamber. The pressure inside the sample chamber varies within the range of 33.4 to 35.2 GPa. By controlling the applied pressure, the electron mobility of BiI3 is regulated. Apply pressures of 33.4 GPa, 34.7 GPa and 35.2 GPa to the sample in the sample chamber in turn. Then calibrate the pressure applied to the sample under the laser. Turn on the circulating water device; place the DAC device with the packaged sample on the bracket between the two electromagnets, adjust the distance between the two electromagnets, and tighten the fixing bolts of the two electromagnets; connect the four electrodes on the DAC device to the Hall card in a specified order. Obtain the relationship between the Hall coefficient, carrier concentration and electron mobility of the BiI3 sample.

[0031] Embodiment 3:

[0032] Embodiment 3 of the present invention provides a method for regulating the electron mobility of BiI3, comprising the following steps:

[0033] S1. Assemble a diamond anvil device that generates pressure, i.e., a press, at room temperature, and level and center the assembled press. In the diamond anvil device, after pressing out a diamond anvil mark at the center of a T301 steel sheet, use the T301 steel sheet with the indentation as a gasket, and use a laser punching device to punch a hole at the same center of the gasket indentation to form an indentation hole, grind the insulating powder and fill it into the indentation hole, pressurize the insulating powder, and then punch the insulating powder to prepare a sample cavity. In the embodiment of the present invention, the insulating powder is Al2O3.

[0034] S2. Add the BiI3 sample to be regulated into the diamond anvil cell device to prepare the sample cavity.

[0035] S3. Use the diamond anvil device to apply pressure to the inside of the sample chamber. The pressure inside the sample chamber varies within the range of 39.0 GPa to 42.3 GPa. By controlling the applied pressure, the electron mobility of BiI3 is regulated. Apply pressures of 39.0 GPa, 40.5 GPa, 41.6 GPa and 42.3 GPa to the sample in the sample chamber in turn. Then calibrate the pressure applied to the sample under the laser. Turn on the circulating water device; place the DAC device with the packaged sample on the bracket between the two electromagnets, adjust the distance between the two electromagnets, and tighten the fixing bolts of the two electromagnets; connect the four electrodes on the DAC device to the Hall card in the specified order. Obtain the changing relationship between the Hall coefficient, carrier concentration and electron mobility of the BiI3 sample.

[0036] The Hall coefficient variation curves of BiI3 materials under different pressures tested in the above embodiment are as follows: Figure 1 As shown, the carrier concentration changes as Figure 2 As shown, the electron mobility changes as Figure 3 As shown. From these figures, we can find that within the pressure range of 30.6-42.3 GPa, the carrier conductivity type is mainly electrons. With the increase of pressure, the electron mobility is improved, the carrier concentration is also increasing, and the Hall coefficient is also increasing with the increase of pressure. This shows that by changing the pressure, the Hall coefficient, carrier concentration and mobility of BiI3 can be regulated, which points out a new direction and idea for the application of BiI3 in the field of electronic devices, and is of great significance for expanding the functional characteristics and application fields of BiI3.

[0037] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0038] Although the embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and cannot be understood as limiting the present invention. Those skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

[0039] The above specific implementations of the present invention do not constitute a limitation on the protection scope of the present invention. Any other corresponding changes and modifications made based on the technical concept of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A method for regulating the electron mobility of bismuth triiodide, characterized in that: The following steps are involved: S1. In a diamond anvil apparatus at room temperature, a steel sheet is pre-pressed as a gasket; S2, adding the sample to be regulated into the diamond anvil cell device to prepare a sample cavity; S3. Applying pressure to the interior of the sample chamber using the diamond anvil cell device, wherein the pressure inside the sample chamber is 30.6-42.3 GPa, and the electron mobility of bismuth triiodide is regulated by controlling the applied pressure.

2. The method for regulating the electron mobility of bismuth triiodide according to claim 1, characterized in that: In step S3, the pressure is calibrated by using the ruby ​​fluorescence peak calibration method.

3. The method for regulating the electron mobility of bismuth triiodide according to claim 1, characterized in that: In step S1, the gasket is further insulated, and the specific steps are: A hole is punched at the center of the indentation of the pre-pressed gasket to form an indentation hole, and insulating powder is ground and filled into the indentation hole.

4. The method for regulating the electron mobility of bismuth triiodide according to claim 3, characterized in that: The insulating powder is Al2O3.

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