Nanoscale silicon carbide ceramic preparation method based on photocuring forming and product

Abstract

The invention belongs to the related technical field of photocuring forming, and discloses a photocuring forming-based nanoscale silicon carbide ceramic preparation method and a product, and the method comprises the following steps: mixing absolute ethyl alcohol, high refractive index resin powder and silicon carbide powder to obtain silicon carbide slurry; adding the silicon carbide slurry into warm water, and carrying out cold isostatic pressing treatment to obtain silicon carbide granulation powder; mixing silicon carbide, an active diluent, an oligomer, high-refractive-index resin, a photoinitiator and other auxiliaries to obtain a resin premixed solution; mixing the resin premixed liquid with the silicon carbide granulation powder to obtain silicon carbide light-cured slurry; 3D printing and post-treatment are conducted on the silicon carbide light-cured slurry to obtain the silicon carbide part, an ethanol solution of high-refractive-index resin powder is used for coating nanoscale silicon carbide particles, the ethanol solution of the high-refractive-index resin powder serves as a binder at the same time, and the particle size of the silicon carbide particles is changed into micron-scale particles from the nanoscale particles.

Description

Technical Field

[0001] The present invention belongs to the technical field related to photocuring molding, and relates to a method and product for preparing nano-scale silicon carbide ceramics based on photocuring molding. Background Art

[0002] Nano-scale silicon carbide can be formed into high-performance parts through pressureless sintering process. It has high density, high mechanical properties, low dielectric constant and dielectric loss, etc. It is mainly used in the manufacture of high-temperature resistors, electric heating elements, high-temperature bearings, nozzles, pneumatic valves, reactors, etc. Traditional processing methods (such as gel injection, compression molding, etc.) all use customized molds for forming. When the structure changes, the mold also needs to be redesigned and processed. The production cycle is long and it is not suitable for individual or small-scale production. The emergence of 3D printing technology makes up for the shortcomings of traditional processing methods.

[0003] Ceramic photocuring technology is one of the types of 3D printing technology. It mainly adds ceramic powder to a photocurable solution, disperses the ceramic powder evenly in the liquid phase through high-speed stirring, and prepares a high-solid content, low-viscosity ceramic slurry. The ceramic slurry is then cured on a photocuring forming device, and ceramic green bodies are obtained by stacking layer by layer. After that, personalized and dense ceramic parts are obtained through a degreasing and sintering process. Ceramic photocuring slurry is generally composed of ceramic powder, photocuring monomer, photoinitiator, dispersant, etc. Usually, in order to improve the quality and performance of ceramic green bodies, some nano-ceramics are introduced, or even completely replace micro-ceramics. At this time, due to the presence of nano-ceramics, the ceramic slurry strongly absorbs ultraviolet light, resulting in a single-layer curing penetration depth of fine ceramic slurry being exponentially lower than that of micro-ceramic slurry, which seriously affects the forming effect.

[0004] The traditional solution is to change the formula of the photocurable resin system, introduce high-refractive resin, and reduce the refractive index difference between the photocurable resin and nano-scale ceramics by surface treatment of the ceramic powder. However, this method cannot achieve the goal for ceramic powders with high refractive index and small particle size. Summary of the invention

[0005] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a method and product for preparing nano-scale silicon carbide ceramics based on photocuring. A layer of high-refractive resin is coated on the surface of nano-scale silicon carbide to reduce the refractive index difference between the particles and the resin. After degreasing, the nano-scale silicon carbide parts are combined with cold isostatic pressing technology to improve the sintering density of photocured silicon carbide, thereby solving the technical problem in the prior art that ceramic powders with high refractive index and small particle size cannot reduce the refractive index between the high-refractive resin and the nano-scale ceramics when using high-refractive resin.

[0006] In order to achieve the above object, the present invention adopts the following technical solution: The present invention provides a method for preparing nano-scale silicon carbide ceramics based on photocuring, comprising the following steps: using a high-refractive index resin to sequentially coat and granulate a ceramic powder to obtain silicon carbide granulated powder; mixing silicon carbide, an active diluent, an oligomer, a high-refractive index resin, a photoinitiator, and other additives to obtain a resin premix; mixing the resin premix with the silicon carbide granulated powder to obtain silicon carbide photocuring slurry; and 3D printing and post-processing the silicon carbide photocuring slurry to obtain silicon carbide parts.

[0007] Furthermore, the silicon carbide photocuring slurry is 3D printed and post-processed to obtain a silicon carbide part, including: the silicon carbide photocuring slurry is printed and formed by light processing technology and the printing parameters are selected according to the curing penetration depth to form a 3D printed silicon carbide green body, and the 3D printed silicon carbide green body is degreased, decarbonized, isostatically pressed, and pressureless sintered to obtain a silicon carbide part.

[0008] Furthermore, the curing penetration selection printing parameters include a slice thickness of 25 35μm, laser power percentage is 80 100%, curing time is 10 15s.

[0009] Furthermore, the method of using a high refractive index resin to sequentially coat and granulate the ceramic powder to obtain silicon carbide granulated powder comprises: Anhydrous ethanol, 1 High refractive index resin powder, 20 The silicon carbide powder is mixed to obtain silicon carbide slurry; the silicon carbide slurry is added into warm water and subjected to cold isostatic pressing to obtain silicon carbide granulated powder; Silicon carbide: 65 , active dilution: 10 , Oligomer: 5 , High refractive index resin: 2 , Photoinitiator: 1 , other additives: 1 .

[0010] Furthermore, the high refractive index resin powder is phenyl diether fluorene powder, and the high refractive index resin is fluorenyl acrylate.

[0011] Furthermore, the active diluent is one or more of 1,6-hexanediol diacrylate, trimethylolpropane triacrylate, and tripropylene glycol diacrylate.

[0012] Furthermore, the oligomer is one or more of polyurethane acrylic resin, bisphenol A epoxy acrylic resin, and dipentaerythritol hexaacrylate.

[0013] Furthermore, the photoinitiator is one or more of phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide and diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide.

[0014] Furthermore, the other additives are one or more of BYK111, BYK110, and 41000.

[0015] The present invention also provides a ceramic part prepared by the above-mentioned preparation method.

[0016] Compared with the prior art, the present invention has the following beneficial technical effects: The present invention discloses a method for preparing nano-scale silicon carbide ceramics based on photocuring, wherein an ethanol solution of a high-refractive index resin powder is used to coat nano-scale silicon carbide particles, and the high-refractive index resin ethanol solution is simultaneously used as a binder to change the particle size of the silicon carbide particles from nano-scale to micron-scale particles. Since the high-refractive index resin and the photosensitive resin have good compatibility, the refractive index difference between the silicon carbide particles and the photosensitive resin can be reduced, while the single-layer curing penetration of the silicon carbide photocuring slurry is increased, and the dispersion of the silicon carbide particles in the photosensitive resin is also facilitated, thereby improving the storage stability of the slurry.

[0017] The present invention discloses a method for preparing nano-scale silicon carbide ceramics based on photocuring. The cold isostatic pressing treatment compresses the pores in the silicon carbide green body by applying uniform high pressure, thereby improving the density of the material, helping to reduce the porosity during the sintering process, and making the silicon carbide parts have a more uniform and compact structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a flow chart of a method for preparing nano-scale silicon carbide ceramics based on photocuring forming according to the present invention; Figure 2 This is a scanning electron microscope image of silicon carbide wrapped with a high refractive index resin in an embodiment of the present invention; Figure 3 This is a scanning electron microscope image of silicon carbide wrapped with a high refractive index resin in an embodiment of the present invention; Figure 4 Printing silicon carbide parts diagram in the embodiment of the present invention; Figure 5 The silicon carbide parts diagram is printed in the embodiment of the present invention. DETAILED DESCRIPTION

[0019] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0020] The invention discloses a method for preparing nano-scale silicon carbide ceramics based on photocuring, comprising the following steps: mixing anhydrous ethanol, high-refractive index resin powder and silicon carbide powder to obtain silicon carbide slurry; adding the silicon carbide slurry into warm water and performing cold isostatic pressing to obtain silicon carbide granulated powder; mixing silicon carbide, active diluent, oligomer, high-refractive index resin, photoinitiator and other additives to obtain resin premix liquid; mixing the resin premix liquid with silicon carbide granulated powder to obtain silicon carbide photocuring slurry; and performing 3D printing and post-processing on the silicon carbide photocuring slurry to obtain silicon carbide parts.

[0021] In the embodiment of the present application, the particle size of the silicon carbide powder is 0.1 to 0.8 μm, and the particle size of the silicon carbide powder can be, but is not limited to, 0.1 μm, 0.2 μm, 0.4 μm, 0.6 μm or 0.8 μm. The mass percentage of the silicon carbide powder in the silicon carbide slurry is 20 , specifically but not limited to 20 , 30 , 40 The mass percentage of anhydrous ethanol in silicon carbide slurry is 55 , specifically but not limited to 55 , 60 , 70 The mass percentage of high refractive index resin powder in silicon carbide slurry is 1 , but not limited to , , .

[0022] Add high refractive index resin powder in proportion to anhydrous ethanol, and then add 0.1~0.8μm silicon carbide powder in proportion to it to mix into silicon carbide slurry. Then slowly add the silicon carbide slurry to the stirring 45~60℃ warm water, wait for precipitation to form, and filter. Then take the lower layer of precipitate and dry it at 100-150℃. After drying, cold isostatic pressing is carried out under 80~160MPa and pressure holding for 30~90s, and then crushing, grinding, sieving, and finally obtaining silicon carbide granulated powder, such as Figure 1 shown.

[0023] The mass percentage of silicon carbide in the resin premix is ​​65 , but not limited to , , The mass percentage of active diluent in the resin premix is ​​10 , but not limited to , , The mass percentage of oligomer in the resin premix is ​​5 , but not limited to , , .

[0024] The mass percentage of high refractive index resin in the resin premix is ​​2 , but not limited to , , The mass percentage of photoinitiator in the resin premix is ​​1 , but not limited to , , The mass percentage of other additives in the resin premix is ​​1 , but not limited to , , , .

[0025] Among them, the high refractive index resin powder is phenyl bisether fluorene powder, the active diluent is a mixture of one or more of 1,6-hexanediol diacrylate, trimethylolpropane triacrylate, and tripropylene glycol diacrylate, the oligomer is a mixture of any one or more of polyurethane acrylic resin, bisphenol A epoxy acrylic resin, and dipentaerythritol hexaacrylate, the high refractive index resin is fluorene acrylate, and the initiator is any one or a mixture of phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide and diphenyl- (2,4,6-trimethylbenzoyl) phosphine oxide.

[0026] The active diluent, oligomer, high refractive index resin, photoinitiator and other additives are stirred at 50-70°C and defoamed to obtain a resin premix. The resin premix is ​​transferred to an agate or silicon carbide ball mill, silicon carbide is added, and the mixture is fully mixed by a ball mill for 0.5-1h at a speed of 250-350r / min to obtain silicon carbide photocurable slurry.

[0027] The silicon carbide photocurable slurry is printed and formed by light processing technology and the printing parameters are selected according to the curing penetration depth to form a 3D printed silicon carbide green body, wherein the curing penetration depth selection printing parameters include a slice thickness of 25 35μm, laser power percentage is 80 100%, curing time is 10 15s.

[0028] After degreasing, decarbonization, isostatic pressing and pressureless sintering, 3D printed silicon carbide green bodies can obtain high-density silicon carbide parts.

[0029] Among them, degreasing is carried out in an argon atmosphere, with the temperature rising at a rate of 1-3°C / min from 20 to 460°C and keeping it for 1-2 hours; the temperature rising at a rate of 1-3°C / min from 460 to 700°C and keeping it for 1-2 hours; the temperature falling at a rate of 1-3°C / min from 700 to 20°C. Decarburization is carried out at a rate of 1-3°C / min from 20 to 700°C and keeping it for 1-2 hours; the temperature falling at a rate of 1-3°C / min from 700 to 20°C. Isostatic pressing: The 3D printed silicon carbide green body after decarburization is carried out under a pressure of 80 to 160 MPa and the pressure is maintained for 30 to 90 seconds. Pressureless sintering is carried out in an argon atmosphere, with the temperature rising at a rate of 1-3°C / min from 20 to 2000°C and keeping it for 2-4 hours; the temperature falling at a rate of 1-3°C / min from 2000 to 20°C.

[0030] Example 1 In 55 Add anhydrous ethanol High refractive index resin powder, then Silicon carbide powder is added to it and mixed into silicon carbide slurry. Then the silicon carbide slurry is slowly dripped into the stirring 45℃ warm water, and filtered after precipitation is formed. Then the lower layer of precipitate is taken and dried at 100℃. After drying, cold isostatic pressing is carried out at 80MPa and pressure for 30s, and then crushing, grinding and sieving are carried out to finally obtain silicon carbide granulated powder.

[0031] 25 Active dilution, 5 Oligomer, 2 High refractive index resin, Photoinitiator, 1 Other additives, stir at 50-70℃, defoam, and obtain resin premix. Transfer the resin premix to an agate or silicon carbide ball mill and add 65 Silicon carbide, such as Figure 2 As shown, the silicon carbide photocurable slurry is obtained by fully mixing with a ball mill for 0.5 h at a rotation speed of 250 r / min.

[0032] The silicon carbide photocurable slurry is printed and formed by light processing technology and the printing parameters are selected according to the curing penetration depth to form a 3D printed silicon carbide green body, wherein the printing parameters selected according to the curing penetration depth include a slice thickness of 25 μm, a laser power percentage of 80%, and a curing time of 10 s.

[0033] The 3D printed silicon carbide green body is heated at a rate of 1°C / min from 20 to 460°C in an argon atmosphere and kept warm for 1 hour; heated at a rate of 1°C / min from 460 to 700°C and kept warm for 1 hour, and cooled at a rate of 1°C / min from 700 to 20°C for degreasing; heated at a rate of 1°C / min from 20 to 700°C and kept warm for 1 hour; cooled at a rate of 1°C / min from 700 to 20°C for decarbonization; the 3D printed silicon carbide green body after decarbonization is isostatically pressed at a pressure of 80MPa for 30s; heated at a rate of 1°C / min from 20 to 2000°C in an argon atmosphere and kept warm for 2 hours; cooled at a rate of 1°C / min from 2000 to 20°C to obtain high-density silicon carbide parts, such as Figure 4 He Ru Figure 5 shown.

[0034] Example 2 In 62 Add anhydrous ethanol High refractive index resin powder, then Silicon carbide powder is added to the mixture to form silicon carbide slurry. Then the silicon carbide slurry is slowly dripped into the stirring warm water at 53°C, and filtered after precipitation is formed. Then the lower layer of precipitate is taken and dried at 125°C. After drying, cold isostatic pressing is performed at 120MPa and pressure for 60s, and then crushing, grinding and sieving are performed to obtain silicon carbide granulated powder.

[0035] 10 Active dilution, 8 Oligomer, 5 High refractive index resin, Photoinitiator, 5 Other additives, stir at 50-70℃, defoam, and obtain resin premix. Transfer the resin premix to an agate or silicon carbide ball mill and add 70 Silicon carbide, such as Figure 3 As shown, the silicon carbide photocuring slurry is obtained by fully mixing with a ball mill for 0.8 h at a rotation speed of 300 r / min.

[0036] The silicon carbide photocurable slurry is printed and formed by light processing technology and the printing parameters are selected according to the curing penetration depth to form a 3D printed silicon carbide green body, wherein the printing parameters selected according to the curing penetration depth include a slice thickness of 30 μm, a laser power percentage of 90%, and a curing time of 13 s.

[0037] The 3D printed silicon carbide green body is heated at a rate of 2°C / min from 20 to 460°C in an argon atmosphere and kept warm for 1.5 hours; heated at a rate of 2°C / min from 460 to 700°C and kept warm for 1.5 hours, and cooled at a rate of 2°C / min from 700 to 20°C for degreasing; heated at a rate of 2°C / min from 20 to 700°C and kept warm for 1.5 hours; cooled at a rate of 2°C / min from 700 to 20°C for decarbonization; the 3D printed silicon carbide green body after decarbonization is isostatically pressed at a pressure of 120MPa and maintained for 60s; heated at a rate of 2°C / min from 20 to 2000°C in an argon atmosphere and kept warm for 3 hours; cooled at a rate of 2°C / min from 2000 to 20°C to obtain high-density silicon carbide parts.

[0038] Example 3 In 70 Add anhydrous ethanol High refractive index resin powder, then Silicon carbide powder is added to it and mixed into silicon carbide slurry. Then the silicon carbide slurry is slowly dripped into the 60℃ warm water that is being stirred, and filtered after precipitation is formed. Then the lower layer of precipitate is taken and dried at 150℃. After drying, cold isostatic pressing is performed at 160MPa and pressure for 90s, and then crushing, grinding, and sieving are performed to finally obtain silicon carbide granulated powder.

[0039] 10 Active dilution, 10 Oligomer, 8 High refractive index resin, Photoinitiator, 10 Other additives, stir at 50-70℃, defoam, and obtain resin premix. Transfer the resin premix to an agate or silicon carbide ball mill and add 75 Silicon carbide was fully mixed in a ball mill for 1 hour at a rotation speed of 350 r / min to obtain silicon carbide photocuring slurry.

[0040] The silicon carbide photocurable slurry is printed and formed by light processing technology and the printing parameters are selected according to the curing penetration depth to form a 3D printed silicon carbide green body, wherein the printing parameters selected according to the curing penetration depth include a slice thickness of 35 μm, a laser power percentage of 100%, and a curing time of 15 s.

[0041] The 3D printed silicon carbide green body is heated at a rate of 3°C / min at 20-460°C in an argon atmosphere and kept warm for 2 hours; heated at a rate of 3°C / min at 460-700°C and kept warm for 2 hours, and cooled at a rate of 3°C / min at 700-20°C for degreasing; heated at a rate of 3°C / min at 20-700°C and kept warm for 2 hours; cooled at 700-20°C for decarbonization at a rate of 3°C / min; the 3D printed silicon carbide green body after decarbonization is isostatically pressed at a pressure of 160MPa and maintained for 90s; heated at a rate of 3°C / min at 20-2000°C in an argon atmosphere and kept warm for 4 hours; cooled at a rate of 3°C / min at 2000-20°C to obtain high-density silicon carbide parts.

[0042] Example 4 Add 4g of phenyl diether fluorene powder to 126g of anhydrous ethanol, stir to fully dissolve, then add 70g of silicon carbide powder to mix into silicon carbide slurry. Then add the silicon carbide slurry dropwise into 50°C warm water stirred by a magnetic stirrer, wait for precipitation to form, and filter. Then take the lower layer of precipitate and dry it at 120°C. After drying, cold isostatic pressing is performed at 150MPa and pressure for 60s, and then crushing, grinding, and sieving are performed to finally obtain silicon carbide granulated powder. ; Take 6g 1,6-hexanediol diacrylate, 4g tripropylene glycol diacrylate, 3g polyurethane acrylic resin, 7g dipentaerythritol hexaacrylate, 5g fluorenyl acrylate, 1g phenyl bis(2,4,6-trimethylbenzoyl)phosphine oxide, 1g diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide, and 3g KOS-110, stir at 60°C, and defoam to obtain a resin premix.

[0043] The resin premix was transferred to a silicon carbide ball mill, an appropriate amount of silicon carbide grinding balls and 70 g of silicon carbide were added, and the mixture was fully mixed by a ball mill for 1 h at a speed of 300 r / min to obtain silicon carbide photocurable slurry.

[0044] The silicon carbide photocurable slurry was printed using digital light processing technology. The printing parameters were selected according to the curing penetration depth. The laser power percentage was 100%, the curing time was 10s, the single-layer curing depth was about 70um, and the slice thickness was 25~35μm.

[0045] The degreasing procedure is to heat from 20 to 460°C at a rate of 1.5°C / min and keep it warm for 1 hour; heat from 460 to 700°C at a rate of 2°C / min and keep it warm for 2 hours; and cool from 700 to 20°C at a rate of 2°C / min for degreasing treatment.

[0046] The temperature was raised at a rate of 2°C / min between 20 and 700°C and kept at that temperature for 2 hours; the temperature was lowered at a rate of 3°C / min between 700 and 20°C for decarbonization.

[0047] The decarbonized 3D printed silicon carbide green body was isostatically pressed at a pressure of 160 MPa and maintained for 90 seconds.

[0048] In an argon atmosphere, the temperature is increased from 20 to 2000°C at a rate of 1°C / min and kept at this temperature for 4 hours; the temperature is decreased from 2000 to 20°C at a rate of 3°C / min to obtain high-density silicon carbide parts.

[0049] The single layer curing depth is 60um-80um, the slice thickness is 30um, the curing power is 100%, and the curing time is 15s. The volume density reaches 3g / cm 3 , bending strength is about 300MPa.

[0050] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0051] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

Claims

1. A method for preparing nano-scale silicon carbide ceramics based on photocuring, characterized in that: The following steps are involved: The ceramic powder is coated and granulated in sequence using a high refractive index resin to obtain silicon carbide granulated powder; Mixing silicon carbide, active diluent, oligomer, high refractive index resin, photoinitiator and other additives to obtain a resin premix solution; The resin premix liquid is mixed with silicon carbide granulated powder to obtain silicon carbide photocurable slurry; The silicon carbide photocuring slurry is 3D printed and post-processed to obtain silicon carbide parts.

2. The method for preparing nano-scale silicon carbide ceramics based on photocuring according to claim 1, characterized in that: The method of 3D printing and post-processing the silicon carbide photocuring slurry to obtain a silicon carbide part comprises: Silicon carbide photocuring slurry is printed and formed through light processing technology, and the printing parameters are selected according to the curing penetration depth to form a 3D printed silicon carbide green body. The 3D printed silicon carbide green body is degreased and decarbonized, isostatically pressed, and pressureless sintered to obtain silicon carbide parts.

3. The method for preparing nano-scale silicon carbide ceramics based on photocuring according to claim 2, characterized in that: The curing penetration selection printing parameters include a slice thickness of 25 35μm, laser power percentage is 80 100%, curing time is 10 15s.

4. The method for preparing nano-scale silicon carbide ceramics based on photocuring according to claim 1, characterized in that: The method of using a high refractive index resin to sequentially coat and granulate the ceramic powder to obtain silicon carbide granulated powder comprises: Anhydrous ethanol, 1 High refractive index resin powder, 20 The silicon carbide powder is mixed to obtain silicon carbide slurry; the silicon carbide slurry is added into warm water and subjected to cold isostatic pressing to obtain silicon carbide granulated powder; Silicon carbide: 65 , active dilution: 10 , Oligomer: 5 , High refractive index resin: 2 , Photoinitiator: 1 , other additives: 1 .

5. The method for preparing nano-scale silicon carbide ceramics based on photocuring according to claim 1, characterized in that: The high refractive index resin powder is phenyl diether fluorene powder, and the high refractive index resin is fluorenyl acrylate.

6. The method for preparing nano-scale silicon carbide ceramics based on photocuring according to claim 1, characterized in that: The active diluent is one or more of 1,6-hexanediol diacrylate, trimethylolpropane triacrylate and tripropylene glycol diacrylate.

7. The method for preparing nano-scale silicon carbide ceramics based on photocuring according to claim 1, characterized in that: The oligomer is one or more of polyurethane acrylic resin, bisphenol A epoxy acrylic resin and dipentaerythritol hexaacrylate.

8. The method for preparing nano-scale silicon carbide ceramics based on photocuring according to claim 1, characterized in that: The photoinitiator is one or more of phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide and diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide.

9. The method for preparing nano-scale silicon carbide ceramics based on photocuring according to claim 1, characterized in that: The other additives are one or more of BYK111, BYK110 and 41000.

10. A ceramic part prepared by the preparation method according to any one of claims 1 to 9.

Images