Plating method, system and equipment of silicon carbide modified layer and storage medium
By monitoring the temperature during the plating process of silicon carbide optical components and cooling treatment when the preset value is reached, the problem of excessive residual stress during the plating process of large-diameter silicon carbide optical components is solved, and a lower residual stress and a more stable plating process is achieved.
Patent Information
- Application Number
- CN202411709601.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-04-04
AI Technical Summary
The residual stress of large-diameter silicon carbide optical components during the plating process is too large, resulting in surface shape changes and other problems.
By monitoring the temperature of the element to be deposited, when the preset temperature threshold is reached, plating is stopped and cooling is performed until the specified temperature is reached, and the plating is continued. This process is performed cyclically until the modified layer meets the plating requirements.
The residual stress of the silicon carbide modified layer is reduced, the degree of mismatch with the silicon carbide workpiece is reduced, and the stability of the plating process is improved.
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Figure CN119753646A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of optical element coating, and in particular to a coating method, system, equipment and storage medium for a silicon carbide modified layer. Background Art
[0002] Silicon carbide (SiC) material has become a widely used optical reflector blank material due to its excellent thermal conductivity, specific stiffness and thermal stability. However, due to the manufacturing mechanism of silicon carbide blanks, it is very difficult to achieve excellent surface roughness performance through optical polishing of the blanks themselves. At present, the generally adopted technical route is to coat a dense, uniform film layer with excellent polishing performance on the surface of the silicon carbide material. This film layer can be called a surface modification layer. After polishing this film layer, the material's own performance limitations can be overcome to achieve a surface roughness that meets performance requirements.
[0003] At present, there are generally two technologies for coating silicon carbide modified layers. One is the SiC modified layer deposited based on chemical vapor deposition technology (Chemical Vapor Deposition, CVD). As a supplier of many foreign silicon carbide optical components, Boostec is also engaged in the research and development of silicon carbide modified layer technology. From the information currently disclosed by the company, the company is also based on CVD technology and can currently achieve surface modification of SiC components with a diameter of more than 1.5m. The other is to use physical vapor deposition technology (Physical Vapor Deposition, PVD) to deposit Si modified layers. At present, China has achieved the surface modification of the world's largest-diameter monomer SiC component of 4m magnitude. Due to its own technical characteristics, PVD technology has greater advantages in the coating of large-diameter optical components.
[0004] However, the development direction of large-aperture silicon carbide optical components is larger aperture and lighter weight, which makes the residual stress problem after film coating more influential on large-aperture silicon carbide optical components with highly lightweight structure. Excessive residual stress will cause greater surface changes of lightweight large-aperture optical components, which will cause a series of problems. Since the modified layer is a single uniform medium ultra-thick film layer, the conventional multi-layer film overlapping method cannot be used to reduce the residual stress in the residual stress optimization method. The stress of the modified layer mainly comes from the linear expansion mismatch between the modified layer material and the base silicon carbide material. If the temperature of the element to be deposited is too high during the coating process, it will inevitably lead to the linear expansion mismatch between the modified layer material and the base silicon carbide material, which will lead to excessive residual stress in the modified layer. Summary of the invention
[0005] In view of this, the present application provides a method, system, equipment and storage medium for plating a silicon carbide modified layer to solve the problem of excessive residual stress in the silicon carbide modified layer plated by the existing deposition method.
[0006] In order to solve the above technical problems, a technical solution adopted in the present application is: to provide a method for plating a silicon carbide modified layer, which includes: controlling a deposition source to plate an element to be deposited according to a pre-acquired plating requirement; continuously acquiring the temperature of the element to be deposited, and confirming whether the temperature reaches a preset temperature threshold; when the temperature of the element to be deposited reaches the preset temperature threshold, controlling the deposition source to stop plating the element to be deposited, and cooling the element to be deposited until the temperature of the element to be deposited drops to a specified temperature, and then controlling the deposition source to continue plating the element to be deposited until the deposition thickness of the modified layer of the element to be deposited meets the plating requirement.
[0007] As a further improvement of the present application, before controlling the deposition source to continue to plate the element to be deposited, the method further includes: using an ion source to clean the surface of the element to be deposited.
[0008] As a further improvement of the present application, the temperature of the element to be deposited is lowered, including: lowering the chamber environment temperature of the vacuum chamber where the element to be deposited is located.
[0009] As a further improvement of the present application, the temperature reduction treatment of the element to be deposited includes: while maintaining the vacuum degree of the vacuum chamber to meet the preset vacuum degree requirement, introducing a certain amount of inert gas into the vacuum chamber.
[0010] As a further improvement of the present application, continuously acquiring the temperature of the element to be deposited includes: using a temperature sensor to acquire the temperature of the element to be deposited in real time.
[0011] As a further improvement of the present application, the temperature of the element to be deposited is continuously obtained, including: obtaining a temperature rise curve of the element to be deposited under plating of a deposition source, the temperature rise curve records the corresponding relationship between the plating time and the temperature of the element to be deposited, and the temperature rise curve is obtained through a previous process test; obtaining the current plating time of the element to be deposited; and determining the current temperature of the element to be deposited according to the current plating time and the temperature rise curve.
[0012] As a further improvement of the present application, the deposition source plates the modified layer of the element to be deposited based on ion-assisted electron beam evaporation, or plates the modified layer of the element to be deposited based on magnetron sputtering.
[0013] In order to solve the above technical problems, another technical solution adopted in the present application is: to provide a silicon carbide modified layer coating system, which includes: a coating module, which is used to control the deposition source to coat the element to be deposited according to the pre-acquired coating requirements; a temperature confirmation module, which is used to continuously obtain the temperature of the element to be deposited and confirm whether the temperature reaches the preset temperature threshold; an intermittent module, which is used to control the deposition source to stop coating the element to be deposited when the temperature of the element to be deposited reaches the preset temperature threshold, and to cool the element to be deposited until the temperature of the element to be deposited drops to a specified temperature, and then control the deposition source to continue coating the element to be deposited until the deposition thickness of the modified layer of the element to be deposited meets the coating requirements.
[0014] In order to solve the above-mentioned technical problems, another technical solution adopted in the present application is: to provide a computer device, which includes a processor and a memory coupled to the processor, wherein program instructions are stored in the memory, and when the program instructions are executed by the processor, the processor executes the steps of the method for plating a silicon carbide modified layer as described in any one of the above-mentioned items.
[0015] In order to solve the above technical problems, another technical solution adopted by the present application is: providing a storage medium storing program instructions capable of implementing any of the above-mentioned methods for plating a silicon carbide modified layer.
[0016] The beneficial effects of the present application are as follows: the method for plating a silicon carbide modified layer of the present application monitors the temperature of the element to be deposited during the plating process of the element to be deposited, and when the temperature of the element to be deposited reaches a preset temperature threshold, notifies the deposition source to stop plating the element to be deposited, and provides time for cooling the element to be deposited, until the temperature of the element to be deposited drops to a specified temperature, controls the deposition source to continue plating the element to be deposited, and repeats the above process until the modified layer plated on the element to be deposited meets the plating requirements, which enables the plating process of the silicon carbide modified layer to be always carried out in a low-temperature environment, thereby reducing the degree of mismatch between the silicon carbide modified layer and the silicon carbide workpiece during the deposition process, and further reducing the residual stress of the silicon carbide modified layer. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 1 is a schematic diagram of a process of a method for plating a silicon carbide modified layer according to an embodiment of the present invention;
[0018] Figure 2 Schematic diagram of functional modules of a plating system for a silicon carbide modified layer according to an embodiment of the present invention;
[0019] Figure 3 is a schematic diagram of the structure of a computer device according to an embodiment of the present invention;
[0020] Figure 4It is a schematic diagram of the structure of the storage medium of an embodiment of the present invention. DETAILED DESCRIPTION
[0021] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0022] The terms "first", "second", "third" in this application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of the features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In the embodiments of this application, all directional indications (such as up, down, left, right, front, back...) are only used to explain the relative position relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the steps or units listed, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.
[0023] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
[0024] Figure 1 is a schematic flow chart of a method for coating a silicon carbide modified layer according to an embodiment of the present invention. It should be noted that if substantially the same results are achieved, the method of the present invention is not limited to Figure 1 The process sequence shown is limited. Figure 1 As shown, the plating method of the silicon carbide modified layer includes the steps of:
[0025] Step S101: controlling a deposition source to plate a component to be deposited according to a pre-acquired plating requirement.
[0026] It should be noted that this embodiment is implemented based on physical vapor deposition technology, which includes electron beam evaporation, electron beam evaporation ion-assisted technology, magnetron sputtering technology, ion beam sputtering technology, and other technologies.
[0027] Specifically, after the pre-input plating requirement is obtained, the component to be deposited is plated according to the plating requirement.
[0028] Step S102: continuously acquiring the temperature of the element to be deposited, and confirming whether the temperature reaches a preset temperature threshold.
[0029] It should be noted that the preset temperature threshold is set in advance according to the deposition requirements of the element to be deposited. Below the preset temperature threshold, the mismatch between the silicon carbide modified layer and the silicon carbide workpiece during the deposition process can reduce the residual stress of the silicon carbide modified layer by plating the element to be deposited below the preset temperature threshold. Generally, the preset temperature threshold is set to 100°C.
[0030] Step S103: When the temperature of the element to be deposited reaches a preset temperature threshold, the deposition source is controlled to stop plating the element to be deposited, and the element to be deposited is cooled down until the temperature of the element to be deposited drops to a specified temperature, and the deposition source is controlled to continue plating the element to be deposited until the deposition thickness of the modified layer of the element to be deposited meets the plating requirements.
[0031] Specifically, during the deposition process of the modified layer of the element to be deposited, when the temperature of the element to be deposited reaches a preset temperature threshold, the plating process of the modified layer of the element to be deposited is suspended and enters an intermittent process. During the intermittent process, the deposition process is no longer carried out, the vacuum state of the vacuum chamber is maintained, and during the intermittent process, the temperature of the element to be deposited is reduced until the temperature of the element to be deposited is reduced to a specified temperature, and then the deposition process is continued on the element to be deposited.
[0032] In this embodiment, the specified temperature is determined according to the process requirements of the element to be deposited, and is generally not less than 25±3°C.
[0033] Furthermore, in some embodiments, before the step of controlling the deposition source to continue plating the element to be deposited, the step further includes: using an ion source to clean the surface of the element to be deposited.
[0034] Specifically, when the deposition source stops plating the element to be deposited, the particles floating in the vacuum chamber will be adsorbed on the surface of the element to be deposited. If these particles are not removed, the plating effect of the modified layer of the element to be deposited will be affected. Therefore, in this embodiment, before plating the element to be deposited again, the surface of the element to be deposited is first bombarded with ions using an ion source to remove the particles adsorbed on the surface of the element to be deposited.
[0035] It should be noted that, in this embodiment, controlling the deposition source to stop plating the element to be deposited specifically includes stopping various process steps such as the deposition source, the ion source, and baking.
[0036] Furthermore, in some embodiments, the step of cooling the element to be deposited specifically includes: lowering the chamber environment temperature of the vacuum chamber where the element to be deposited is located.
[0037] Specifically, by lowering the chamber environment temperature of the vacuum chamber where the element to be deposited is located, the element to be deposited can dissipate heat by radiation, thereby achieving a cooling effect.
[0038] Furthermore, in some other embodiments, the step of cooling the element to be deposited specifically includes: introducing a certain amount of inert gas into the vacuum chamber while maintaining the vacuum degree of the vacuum chamber to meet a preset vacuum degree requirement.
[0039] Specifically, in this embodiment, a small amount of inert gas can be injected into the vacuum chamber to drive the heat of the element to be deposited, thereby achieving a cooling effect. It should be noted that when the inert gas is introduced, the vacuum degree of the vacuum chamber needs to be maintained within a certain range to ensure the vacuum state of the vacuum chamber. The small amount of inert gas introduced above refers to an inert gas such as argon. The amount of gas introduced is determined according to the state of the vacuum chamber. Generally, the amount of gas introduced does not make the vacuum degree of the vacuum chamber ≥5×10 -2 Pa.
[0040] Furthermore, in some embodiments, the step of continuously acquiring the temperature of the element to be deposited specifically includes: acquiring the temperature of the element to be deposited in real time using a temperature sensor.
[0041] Specifically, a temperature sensor is provided in advance in the vacuum chamber, and the temperature of the element to be deposited is collected by the temperature sensor, so that the temperature of the element to be deposited is monitored in real time.
[0042] Furthermore, in some embodiments, the step of continuously acquiring the temperature of the element to be deposited includes:
[0043] 1. Obtain a temperature rise curve of the component to be deposited under the plating of the deposition source. The temperature rise curve records the corresponding relationship between the plating time and temperature of the component to be deposited. The temperature rise curve is obtained through the previous process test.
[0044] Specifically, the temperature rise curve of the element to be deposited can be obtained through a preliminary process test. During the preliminary process test, the deposition source is simulated and controlled to plate the element to be deposited uninterruptedly until a modified layer is plated on the surface of the element to be deposited. During this process, the corresponding relationship between the temperature of the element to be deposited and the plating time is continuously recorded to obtain the temperature rise curve.
[0045] 2. Obtain the current plating time of the component to be deposited.
[0046] 3. Determine the current temperature of the component to be deposited based on the current plating time and the temperature rise curve.
[0047] Specifically, the plating time of the deposition source from the start of this operation to the current time is obtained, and then the temperature corresponding to the current time is determined from the heating curve in combination with the current plating time and the specified temperature. It should be noted that when the deposition source stops plating, the current plating time is reset.
[0048] In order to facilitate understanding of the content of the present invention, two implementation modes are provided in this embodiment, which are as follows:
[0049] Implementation 1:
[0050] Based on the ion-assisted electron beam evaporation technology, the silicon carbide modified layer is plated on the element to be deposited. Before the modified layer is deposited, the preset temperature threshold is determined by non-real-time means. At the beginning of the process, the temperature of the element to be deposited is room temperature 25°C. During the deposition process, it takes 3 hours for the temperature of the element to be deposited to rise from 25°C to 120°C, and 2 hours to rise from 50°C to 120°C. During the deposition process, the thickness of the modified layer is detected by the crystal oscillator control method. In the intermittent process when the deposition source stops plating, the temperature of the element to be deposited is reduced from 120°C to 50°C in 4 hours by introducing argon gas at 100sccm.
[0051] 1. Start the modified layer plating. After the process starts, after 3 hours of deposition, the deposition process is suspended and the deposition element enters the intermittent process;
[0052] 2. During the intermittent process, argon gas was introduced at 100 sccm to cool down the components to be deposited. The cooling time was 4 hours, and ion cleaning was started.
[0053] 3. After ion cleaning, the process is started again, and the deposition process takes 2 hours;
[0054] 4. Then, the above three steps are repeated until the cumulative deposition thickness monitored by the crystal oscillator reaches the specified modified layer deposition thickness.
[0055] Implementation 2:
[0056] The silicon carbide modified layer is plated on the component to be deposited based on magnetron sputtering technology. Real-time temperature monitoring is used in the deposition process to monitor the temperature state of the component to be deposited during the deposition process. Before deposition, it was learned through experiments that the deposition rate was 1μm per hour and the specified deposition thickness was 12μm.
[0057] 1. Start deposition of modified layer. When the temperature of the deposited component reaches 50°C, suspend the deposition process. When the deposited component enters intermittent process, the deposition source stops plating.
[0058] 2. During the intermittent process, monitor the temperature of the component to be deposited. When the temperature drops to 25°C, start ion cleaning;
[0059] 3. After ion cleaning, the process is started until the temperature of the element to be deposited reaches 50°C, and the plating work is stopped again;
[0060] 4. Then, the above three steps are repeated until the cumulative deposition process time reaches 12 hours and the expected thickness of the modified layer reaches 12 μm.
[0061] The method for plating the silicon carbide modified layer of the present embodiment monitors the temperature of the element to be deposited during the plating process of the element to be deposited. When the temperature of the element to be deposited reaches a preset temperature threshold, the deposition source is notified to stop plating the element to be deposited, providing time for the element to be deposited to cool down. When the temperature of the element to be deposited drops to a specified temperature, the deposition source is controlled to continue plating the element to be deposited. The above process is repeated until the modified layer plated on the element to be deposited meets the plating requirements. The plating process of the silicon carbide modified layer is always carried out in a low-temperature environment, thereby reducing the mismatch between the silicon carbide modified layer and the silicon carbide workpiece during the deposition process, and further reducing the residual stress of the silicon carbide modified layer.
[0062] Figure 2 Schematic diagram of the functional modules of the coating system of the silicon carbide modified layer according to the embodiment of the present invention. Figure 2 As shown, the silicon carbide modified layer coating system 20 includes: a coating module 21, a temperature confirmation module 22 and an intermittent module 23.
[0063] A plating module 21, used to control a deposition source to plate a to-be-deposited element according to a pre-acquired plating requirement;
[0064] The temperature confirmation module 22 is used to continuously obtain the temperature of the element to be deposited and confirm whether the temperature reaches a preset temperature threshold;
[0065] The intermittent module 23 is used to control the deposition source to stop plating the element to be deposited when the temperature of the element to be deposited reaches a preset temperature threshold, and to cool the element to be deposited until the temperature of the element to be deposited drops to a specified temperature, and then control the deposition source to continue plating the element to be deposited until the deposition thickness of the modified layer of the element to be deposited meets the plating requirements.
[0066] Optionally, before the intermittent module 23 controls the deposition source to continue plating the element to be deposited, it is also used to: use the ion source to clean the surface of the element to be deposited.
[0067] Optionally, the intermittent module 23 performs a cooling process on the element to be deposited, specifically including: lowering the chamber environment temperature of the vacuum chamber where the element to be deposited is located.
[0068] Optionally, the intermittent module 23 performs an operation of cooling the element to be deposited, specifically including: introducing a certain amount of inert gas into the vacuum chamber while maintaining the vacuum degree of the vacuum chamber to meet a preset vacuum degree requirement.
[0069] Optionally, the temperature confirmation module 22 performs an operation of continuously acquiring the temperature of the element to be deposited, specifically including: acquiring the temperature of the element to be deposited in real time by using a temperature sensor.
[0070] Optionally, the temperature confirmation module 22 performs an operation of continuously obtaining the temperature of the element to be deposited, specifically including: obtaining a temperature rise curve of the element to be deposited under plating of a deposition source, the temperature rise curve recording the corresponding relationship between the plating time and the temperature of the element to be deposited, the temperature rise curve being obtained through a previous process test; obtaining the current plating time of the element to be deposited; and determining the current temperature of the element to be deposited based on the current plating time and the temperature rise curve.
[0071] Optionally, the deposition source plates the modified layer of the element to be deposited based on an ion-assisted electron beam evaporation method, or plates the modified layer of the element to be deposited based on a magnetron sputtering method.
[0072] For other details about the technical solutions implemented by each module in the plating system of the silicon carbide modified layer in the above embodiment, please refer to the description of the plating method of the silicon carbide modified layer in the above embodiment, which will not be repeated here.
[0073] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For system embodiments, since they are basically similar to method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.
[0074] See also Figure 3 , Figure 3 FIG. 1 is a schematic diagram of the structure of a computer device according to an embodiment of the present invention. Figure 3 As shown, the computer device 30 includes a processor 31 and a memory 32 coupled to the processor 31, wherein the memory 32 stores program instructions. When the program instructions are executed by the processor 31, the processor 31 executes the steps of the plating method of the silicon carbide modified layer described in any of the above embodiments.
[0075] The processor 31 may also be referred to as a resource (Central Processing Unit). The processor 31 may be an integrated circuit chip having signal processing capabilities. The processor 31 may also be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.
[0076] See also Figure 4 , Figure 4 It is a schematic diagram of the structure of the storage medium of the embodiment of the present invention. The storage medium of the embodiment of the present invention stores program instructions 41 that can implement the above-mentioned method for plating the silicon carbide modified layer, wherein the program instructions 41 can be stored in the above-mentioned storage medium in the form of a software product, including a number of instructions for a computer device (which can be a personal computer, server, or network device, etc.) or a processor (processor) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk and other media that can store program codes, or computer devices such as computers, servers, mobile phones, tablets, etc.
[0077] In the several embodiments provided in the present application, it should be understood that the disclosed computer devices, systems and methods can be implemented in other ways. For example, the system embodiments described above are only schematic, for example, the division of units is only a logical function division, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of systems or units, which can be electrical, mechanical or other forms.
[0078] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above integrated unit may be implemented in the form of hardware or in the form of software functional units. The above is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the contents of the specification and drawings of this application, or directly or indirectly used in other related technical fields, is also included in the patent protection scope of the present application.
Claims
1. A method for plating a silicon carbide modified layer, characterized in that: It includes: Controlling the deposition source to plate the element to be deposited according to the pre-acquired plating requirements; Continuously acquiring the temperature of the element to be deposited, and confirming whether the temperature reaches a preset temperature threshold; When the temperature of the element to be deposited reaches a preset temperature threshold, the deposition source is controlled to stop plating the element to be deposited, and the element to be deposited is cooled down until the temperature of the element to be deposited drops to a specified temperature, and the deposition source is controlled to continue plating the element to be deposited until the deposition thickness of the modified layer of the element to be deposited meets the plating requirement.
2. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: Before controlling the deposition source to continue plating the element to be deposited, the method further includes: The surface of the element to be deposited is cleaned by using an ion source.
3. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The step of cooling the element to be deposited comprises: The chamber environment temperature of the vacuum chamber where the element to be deposited is located is lowered.
4. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The step of cooling the element to be deposited comprises: When the vacuum degree of the vacuum chamber is maintained to meet the preset vacuum degree requirement, a certain amount of inert gas is introduced into the vacuum chamber.
5. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The continuously acquiring the temperature of the element to be deposited comprises: The temperature of the element to be deposited is acquired in real time using a temperature sensor.
6. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The continuously acquiring the temperature of the element to be deposited comprises: Obtaining a temperature rise curve of the element to be deposited under plating of the deposition source, wherein the temperature rise curve records the corresponding relationship between the plating time and temperature of the element to be deposited, and the temperature rise curve is obtained through a previous process test; Obtaining the current plating time of the element to be deposited; The current temperature of the element to be deposited is determined according to the current plating time and the temperature rise curve.
7. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The deposition source plates the modified layer of the element to be deposited based on an ion-assisted electron beam evaporation method, or plates the modified layer of the element to be deposited based on a magnetron sputtering method.
8. A coating system for a silicon carbide modified layer, characterized in that: It includes: A plating module, used for controlling a deposition source to plate a to-be-deposited element according to a pre-acquired plating requirement; A temperature confirmation module, used to continuously obtain the temperature of the element to be deposited, and confirm whether the temperature reaches a preset temperature threshold; The intermittent module is used to control the deposition source to stop plating the element to be deposited when the temperature of the element to be deposited reaches a preset temperature threshold, and to cool the element to be deposited until the temperature of the element to be deposited drops to a specified temperature, and then control the deposition source to continue plating the element to be deposited until the deposition thickness of the modified layer of the element to be deposited meets the plating requirement.
9. A computer device, characterized in that: The computer device includes a processor and a memory coupled to the processor, wherein program instructions are stored in the memory. When the program instructions are executed by the processor, the processor executes the steps of the method for plating a silicon carbide modified layer as described in any one of claims 1 to 7.
10. A storage medium, characterized in that: The device stores program instructions capable of implementing the method for plating a silicon carbide modified layer according to any one of claims 1 to 7.