Winding copper wire and products related thereto, and production equipment and method for winding copper wire

Abstract

The present application relates to winding copper wire and its related products and the production equipment and method of winding copper wire, the winding copper wire has a layer of silicon carbide ceramic layer with the thickness range of 1-5um deposited on the outer peripheral surface of the wire body. The silicon carbide ceramic layer not only has good insulation performance, but also has dense hexagonal metallographic structure, good voltage resistance and ductility, so the winding copper wire of the present application can be applied to various occasions instead of enameled copper wire, and compared with enameled copper wire, it also has the characteristics of good heat conduction performance, high wire slot fullness rate after forming into a coil, less heat generated by eddy current on the copper wire, high temperature resistance, smaller motor volume under the same power, and greater current output under the same volume.

Description

TECHNICAL FIELD

[0001] The present application relates to a kind of winding copper wire and its related product, also relates to a kind of equipment for producing above-mentioned winding copper wire and production method. BACKGROUND

[0002] The winding of motor coil of new energy electric vehicle is mostly wound by enameled copper wire, and this copper wire wrapped by insulating paint has the following problems:

[0003] 1) The temperature resistance range of insulating paint is 100-180 ℃, and when the motor outputs high power, due to large working current, it is easy to cause insulation failure;

[0004] 2) The single-side thickness of insulating paint on copper wire is 100-150 um, which leads to large porosity of wire slot hole after forming into coil, and the heat generated by eddy current on copper wire is also more, which is not conducive to long-term and high-load operation of motor;

[0005] 3) The thermal conductivity of insulating paint is poor, and the thermal conductivity range is only 0.2-0.3 W / m·K, which is easy to cause heat accumulation, and the accumulated heat will increase the resistance of copper wire and further limit the current output of copper wire.

[0006] It can be seen that the above-mentioned copper wire has become a limiting factor for the stable output of high power of new energy electric vehicle motor. SUMMARY

[0007] The purpose of the present application is to provide a substitute for enameled copper wire, to solve the problems of insufficient temperature resistance of insulating layer, large porosity of wire slot hole after forming into coil, and poor thermal conductivity of insulating layer.

[0008] The purpose of the present application is achieved by the following technical scheme: a winding copper wire, characterized in that a layer of silicon carbide ceramic layer with a thickness range of 1-5 um is deposited on the outer periphery of the wire body.

[0009] The silicon carbide ceramic layer has good insulation performance, thermal stability temperature and thermal conductivity, which are much higher than those of insulating paint, and the thickness is only 1-5 um, which can significantly reduce the porosity of wire slot hole after forming into coil and reduce the heat generated by eddy current. In addition, the silicon carbide ceramic layer has a dense hexagonal metallographic structure, good pressure resistance and ductility, so the winding copper wire of the present application can completely replace enameled copper wire and be applied to various occasions, such as new energy electric vehicle, unmanned aerial vehicle, low-altitude aircraft, inductor, etc. Of course, the application occasions are different, the requirements for pressure resistance are different, and the suitable thickness of ceramic layer will also be different.

[0010] Based on the new energy electric vehicle motor withstand voltage requirements: 400v charging pile requirements motor configuration winding room temperature withstand AC voltage 1000v, 800v charging pile requirements motor configuration winding room temperature withstand AC voltage 1500v, applied to the occasion, recommended ceramic layer thickness range is 2-5um, 2-3um better, meet the insulation layer withstand voltage requirements, while the cost is relatively low.

[0011] As preferred: the silicon carbide ceramic layer is deposited by PVD or PECVD or CVD under vacuum conditions.

[0012] The application also provides a motor composed of the coil wound by the copper wire, and an electric vehicle using the motor.

[0013] In addition, the application also provides a production equipment of the winding copper wire, which is a PVD or PECVD or CVD coating equipment for copper wire coating, sequentially comprising a unwinding chamber, a coating chamber and a winding chamber, which are connected with vacuum pumps respectively, and the adjacent two chambers are isolated and only connected through a small copper wire passing channel during work, so that the vacuum degree of each chamber can be controlled independently.

[0014] The unwinding chamber and the winding chamber are both provided with a tension controller for adjusting the tension of the copper wire, which cooperates with the unwinding roller of the unwinding chamber and the winding roller of the winding chamber to form unwinding devices and winding devices respectively.

[0015] The coating chamber is provided with a copper wire turnover wheel, which drives the copper wire to rotate in the coating area of the coating chamber to uniformly coat a silicon carbide ceramic layer with a thickness range of 1-5um on the outer periphery.

[0016] As preferred: the coating chamber is formed by connecting two or more separate coating chambers which are isolated from each other during work and only connected through a small copper wire passing channel, each of the separate coating chambers is provided with a copper wire turnover wheel, and each of the separate coating chambers is connected with a vacuum pump.

[0017] As preferred: the production equipment is a high-power pulse magnetron sputtering coating equipment, and it is provided with a sputtering source with a peak voltage of 2000v, a peak current of 1000A and a peak power of 2MW.

[0018] The application also provides a production method using the production equipment, which first ionizes the copper wire body to clean it, and then uses a high-power pulse sputtering silicon target to deposit a single crystal silicon transition layer and a silicon carbide ceramic layer with a thickness range of 1-5um on the outer periphery of the copper wire body.

[0019] Beneficial effects:

[0020] 1) the silicon carbide ceramic layer not only has good insulation performance, but also has a dense hexagonal metallographic structure, good pressure resistance and ductility, so the winding copper wire of the application can replace the enameled copper wire and be applied to various occasions, and has the following characteristics compared with the enameled copper wire:

[0021] a) the thermal conductivity of the insulating paint is 0.2-0.3 W / m·K, and the thermal conductivity of the silicon carbide ceramic layer is much higher than that of the insulating paint, so that the heat conduction performance of the motor can be greatly improved by replacing the enameled copper wire in the prior art with the winding copper wire of the application;

[0022] b) the thickness of the film layer deposited on the outer periphery of the copper wire body is only 1-5 um, and compared with the enameled copper wire scheme, the slot fullness rate is high after forming into a coil, and the heat generated by eddy current on the copper wire is small;

[0023] c) the temperature resistance of the insulating paint is only 100-180℃, and the thermal stability temperature of the silicon carbide ceramic layer is much higher than that of the insulating paint, so that the temperature resistance of the motor winding can be greatly improved, and there is no problem of insulation failure under the condition of no pressure resistance problem;

[0024] d) the thickness of the insulating layer attached to the outer copper wire body is greatly reduced, the slot fullness rate is high after forming into a coil, and the same power motor can achieve smaller size, and the same size can have larger current output;

[0025] 2) the application provides a continuous winding type film plating equipment, in particular, the application provides an equipment and method for plating a silicon carbide ceramic layer by PVD. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 is a structural schematic diagram of the preferred production equipment of the application;

[0027] Figure 2 、 3 is Figure 1 a structural schematic diagram of the copper wire turning wheel in the application. DETAILED DESCRIPTION

[0028] Example 1

[0029] A winding copper wire has a layer of silicon carbide ceramic layer deposited on the outer periphery of the wire body.

[0030] The silicon carbide ceramic layer has good insulation performance, and the insulation resistance range is 1*10 8 -5*10 9 ohm, and has a dense hexagonal metallographic structure, good pressure resistance and ductility, so the winding copper wire of the application can replace the enameled copper wire and be applied to various occasions, such as new energy electric vehicles, unmanned aerial vehicles, low-altitude aircraft, inductors, etc. Through testing, the elongation and ductility of the winding copper wire of the application meet the national standard requirements of the insulating paint enameled wire in the corresponding application scenarios.

[0031] For the inductor, the voltage resistance requirement is generally not high, and a ceramic layer of about 1 um can be selected. Of course, for high-voltage resistance application scenarios, the voltage resistance level can be improved by increasing the thickness of the ceramic layer. For example, for new energy electric vehicles, 400v charging piles require the winding of the motor configuration to withstand an alternating current breakdown voltage of 1000v at room temperature, and 800v charging piles require the winding of the motor configuration to withstand an alternating current breakdown voltage of 1500v at room temperature. For this purpose, a ceramic layer of 2-5 um thickness can be selected, and of course 2-3 um is more recommended considering the cost.

[0032] The winding copper wire of the present embodiment also has the following advantages by replacing the enameled copper wire:

[0033] 1) The thermal conductivity of the insulating paint is 0.2-0.3 W / m·K, and the thermal conductivity of the silicon carbide ceramic layer is much higher than that of the insulating paint. Therefore, by replacing the enameled copper wire in the prior art with the winding copper wire of the present embodiment, the heat conduction performance of the motor can be greatly improved;

[0034] 2) The thickness of the deposition layer on the outer periphery of the winding copper wire of the present embodiment is much lower than that of the enameled copper wire. After forming into a coil, the slot fullness rate is high, and the heat generated by eddy current on the copper wire is small;

[0035] 3) The temperature resistance of the insulating paint is only 100-180℃, and the thermal stability temperature of the silicon carbide ceramic layer is much higher than that of the insulating paint. The present embodiment can greatly improve the temperature resistance of the motor winding. Without pressure resistance problems, there will be no insulation failure problems;

[0036] 4) The thickness of the insulating layer attached to the outer body of the copper wire is greatly reduced. After forming into a coil, the slot fullness rate is high, and the same power motor can achieve smaller size, and the same size can have larger current output.

[0037] The above ceramic layer can be obtained by PVD or PECVD or CVD under vacuum conditions, etc.

[0038] Example Two

[0039] The silicon carbide ceramic layer is obtained by PECVD or CVD, which is related in the prior art. The present embodiment aims to provide a device and method for obtaining a silicon carbide ceramic layer by PVD.

[0040] Figure 2 A continuous winding type high-power pulsed magnetron sputtering coating device is used for continuous coating of copper wire, which comprises unwinding chamber, first coating chamber, second coating chamber and winding chamber connected in turn, which are connected with vacuum pumping unit (not shown) respectively, and the adjacent two chambers are only connected through a small copper wire crossing channel 4 during work, so that the vacuum degree of each chamber can be independently controlled.

[0041] The unwinding chamber and the winding chamber are respectively equipped with tension controllers 2 and 8 for adjusting the tension of the copper wire. They cooperate with the unwinding roller 1 of the unwinding chamber and the winding roller 7 of the winding chamber to form the unwinding device and the winding device, respectively.

[0042] The first and second coating chambers are equipped with synchronously operating copper wire turning wheels 6 (in this embodiment, the copper wire turning wheel is a structure that drives the copper wire to rotate continuously; in other embodiments, an appropriate turning angle and turning wheel structure can be selected according to the configuration of the planar cathode), which drive the copper wire 10 to rotate in the coating area of ​​each coating chamber, thereby forming a uniform coating on the outer peripheral surface. Among them, a relatively isolated ion cleaning area is also formed at the front of the first coating chamber.

[0043] Figure 1 3 is a guide wheel, which is installed in each chamber to guide the unwound copper wire 10 smoothly through the copper wire passage 4 into the first coating chamber, then into the second coating chamber, and finally into the winding chamber, where it is finally wound up by the winding device. 5 is a planar cathode.

[0044] Figure 2 , 3 for Figure 1 A schematic diagram of the copper wire turning wheel 6 is shown. As shown, it is a gear, which is rotated by a motor 91 via a gear 92. The copper wire 10 passes between two rollers 61 located in its middle. After adjusting the distance between the two rollers 61 to clamp the copper wire 10, the motor can drive the copper wire 10 to rotate, and the movement of the copper wire 10 is not hindered by the rolling of the two rollers 61.

[0045] The installation method of the two rollers 61 is as follows Figure 3 As shown, two cantilever sections extend from the inner ring hole of the copper wire turning wheel 6. The rotating shafts of the two rollers 61 are connected to the two cantilever sections by bolts 11 from one side through their two ends. The two rollers 61 face each other in the gap between the two cantilever sections, and the copper wire 10 passes through them and is clamped.

[0046] When obtaining silicon carbide ceramic layers via PECVD or CVD, the following methods can also be used: Figure 1 Similar coating equipment, only the design of the coating area is different.

[0047] The coating process of the above equipment is as follows:

[0048] 1. Open the unwinding chamber door and place the copper wire onto the unwinding roller 1, and then... Figure 1 Load the copper wires through each chamber and close all the chamber doors.

[0049] 2. Start the vacuum pump unit to vacuumize and preheat the equipment. When the vacuum reaches 5E-3 Pa and the temperature reaches 100 degrees, fill the cleaning chamber with argon to 5E-1 Pa, bias the copper wire to -50-100 V, open the ion source power to 2 kW, and perform ion cleaning on the copper wire. At the same time, open the sending and receiving mechanism at a speed of 1 m / min.

[0050] 3. When the ion-cleaned copper wire enters the coating area in the first coating chamber, open the argon to 2E-1 Pa, and set the high-power pulsed sputtering silicon target output power of the planar cathode 5 to 2-5 kW to deposit a single-crystal silicon transition layer on the surface of the copper wire to enhance the film-substrate adhesion. During the coating process, pay attention to the rotation of the copper wire 10 by the rotation wheel 6 to ensure that the entire surface of the copper wire 10 is cleaned and evenly coated.

[0051] 4. When the copper wire is evenly coated with the primer layer, enter the second coating chamber, fill it with argon and acetylene to 5E-1 Pa, and open the high-power pulsed sputtering silicon target power to 2-5 kW to deposit a silicon carbide ceramic layer on the surface of the copper wire.

[0052] 5. The copper wire 10 is completely recovered from the unwinding device to the winding device, the coating is complete, the winding and unwinding devices are stopped, and the planar cathode 5 is stopped.

[0053] 6. Turn off the vacuum pump unit, release the gas, and break the vacuum.

[0054] 7. Open the winding chamber door and take out the coated product.

[0055] When obtaining a silicon carbide ceramic layer by PVD, in addition to the primer layer through single-crystal silicon, attention should be paid to selecting a high-power pulsed magnetron sputtering coating device to obtain sufficient adhesion, and the configuration of the sputtering source should meet the requirements to ensure the ionization rate. In this embodiment, the power supply configuration is as follows: TruPlasma hipims4002G220kw, the peak voltage is 2000V, the peak current is 1000A, the power is 20KW, the frequency is 10-3000Hz, the pulse width is 1-1000us, and the peak power is 2 megawatts. In addition, during the coating process, attention should also be paid to the matching of the sputtering rate (affected by power) and the deposition rate (copper wire speed), and the copper wire temperature also needs to be controlled (factors include speed, etc.).

[0056] The copper wire (silicon carbide ceramic layer thickness 2.5-3um) coated by the device and method has the following test performance:

[0057] 1. The resistance between the copper wire surface coating and the coating, and between the coating and the copper wire, tested by a high resistance meter, reaches 1*10 8 ohms or more;

[0058] 2. Copper wire and coating, coating and coating, 1500v oscillating table 2 revolutions / second for 120 seconds, no change in resistance, AC breakdown voltage resistance exceeds 1500v;

[0059] 3. After winding 2mm*4mm (commonly used specifications for electric vehicle motors) flat copper wire on a 16mm diameter round bar and unfolding, the copper wire surface coating has no cracking phenomenon.

[0060] 4. Other data is shown in Table 1.

[0061] Table 1

[0062]

[0063] It should be noted that the above breakdown voltage test (1500V) is only a test according to the requirements of the enameled wire GB, in fact, the copper wire of the embodiment has passed the AC5000 and AC7000 breakdown voltage resistance tests at room temperature, compared with the enameled wire, it can be applied to scenes with higher voltage resistance requirements.

Claims

1. A winding copper wire, characterized by, The wire body outer peripheral surface is deposited with a silicon carbide ceramic layer with a thickness ranging from 1 to 5 um, said silicon carbide ceramic layer having a hexagonal metallographic structure, said silicon carbide ceramic layer having an insulation resistance ranging from 1*10 8 -5*10 9 ohms.

2. The winding copper wire according to claim 1, wherein The thickness of the silicon carbide ceramic layer is 2-5um.

3. The winding copper wire according to claim 2, wherein The thickness of the silicon carbide ceramic layer is 2-3um.

4. The winding copper wire according to claim 1, wherein The silicon carbide ceramic layer is deposited by PVD or PECVD or CVD under vacuum condition.

5. An electric machine comprising a coil wound by the copper wire of claim 2 or 3.

6. An electric vehicle using the electric machine of claim 5.

7. An apparatus for producing the winding copper wire as claimed in any one of claims 1 to 4, characterized by It is a PVD or PECVD or CVD coating equipment for copper wire coating, which sequentially comprises unwinding chamber, coating chamber and winding chamber, which are respectively connected with vacuum pumping unit, and the adjacent two chambers are isolated and only connected through the small copper wire crossing channel during work, so that the vacuum degree of each chamber can be independently controlled. The unwinding chamber and the winding chamber are both provided with tension controllers for adjusting the tension of the copper wire, which are respectively matched with the unwinding roller of the unwinding chamber and the winding roller of the winding chamber to form unwinding device and winding device. The coating chamber is provided with a copper wire overturning wheel, which drives the copper wire to rotate in the coating area of the coating chamber, so as to uniformly coat a silicon carbide ceramic layer with a thickness range of 1-5 um on the outer circumferential surface, the silicon carbide ceramic layer has a hexagonal metallographic structure, and the silicon carbide ceramic layer has an insulation resistance range of 1*10 8 -5*10 9 ohm.

8. The production apparatus according to claim 7, characterized by The coating chamber is formed by connecting two or more separate coating chambers which are isolated from each other and only connected through the small copper wire crossing channel during work, each of the separate coating chambers is provided with a copper wire turnover wheel, and each of the separate coating chambers is connected with the vacuum pumping unit.

9. The production apparatus according to claim 8, characterized by The production equipment is a high-power pulsed magnetron sputtering coating equipment, and it is provided with a sputtering source with peak voltage of 2000v, peak current of 1000A and peak power of 2MW.

10. A production method using the production apparatus according to claim 9, characterized by, The copper wire body is first ion cleaned, and then a single crystal silicon transition layer and a silicon carbide ceramic layer with a thickness range of 1-5 um are deposited on the outer circumferential surface of the copper wire body by high-power pulsed sputtering of a silicon target, the silicon carbide ceramic layer has a hexagonal metallographic structure, the silicon carbide ceramic layer has an insulation resistance range of 1*10 8 -5*10 9 ohms, and the single crystal silicon transition layer has an insulation resistance of 1*10 8 ohms or above.

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