Epitaxial growth apparatus, epitaxial growth method, and epitaxial wafer

Abstract

The invention provides epitaxial growth equipment, an epitaxial growth method and an epitaxial wafer. The epitaxial growth apparatus includes: a transfer chamber; an epitaxial reaction chamber; a first gas processing device in communication with the transfer chamber to process gas discharged therefrom; the second gas processing device is communicated with the epitaxial reaction chamber so as to process gas discharged from the epitaxial reaction chamber; and the control device is configured to interrupt communication between the transfer chamber and the first gas processing device and communication between the epitaxial reaction chamber and the second gas processing device under the condition that any one of the first gas processing device and the second gas processing device breaks down.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to epitaxial growth equipment, epitaxial growth methods and epitaxial wafers. Background Art

[0002] Epitaxial growth technology is a technology that can grow an epitaxial layer on a polished wafer. The epitaxial layer has a different conductivity type, resistivity and crystal structure from the polished wafer, which can meet the production needs of a variety of different semiconductor devices and greatly improve the flexibility of semiconductor device design.

[0003] With the rapid development of semiconductor industry technology, the requirements for epitaxial wafers are getting higher and higher, especially the requirements for the particle content on the surface of epitaxial wafers. In related technologies, the particle content in the edge area of ​​epitaxial wafers is relatively high. These particle defects may cause epitaxial defects in the epitaxial layer, thereby affecting the performance of the final product.

[0004] Therefore, particle contamination during the epitaxial growth process must be strictly controlled. Summary of the invention

[0005] The present disclosure provides epitaxial growth equipment, epitaxial growth method and epitaxial wafer, which can reduce the particle content in the edge area of ​​the epitaxial wafer and improve the performance of the epitaxial wafer.

[0006] The technical solution of the present disclosure is achieved as follows: In a first aspect, the present disclosure provides an epitaxial growth device, the epitaxial growth device comprising: transfer chamber; Epitaxial reaction chamber; a first gas processing device in communication with the transfer chamber to process the gas exhausted therefrom; a second gas processing device, connected to the epitaxial reaction chamber to process the gas exhausted therefrom; A control device configured to: In the event of a failure in either the first gas processing device or the second gas processing device, the communication between the transfer chamber and the first gas processing device and the communication between the epitaxial reaction chamber and the second gas processing device are interrupted.

[0007] In some examples, the control device is further configured to: When neither the first gas processing device nor the second gas processing device fails and the pressure difference between the transfer chamber and the epitaxial reaction chamber is not within a preset threshold range, the pressure difference is controlled to be within the threshold range.

[0008] In some examples, the control device is further configured to: The pressure difference is made to be within the threshold range by controlling the suction force of the first gas treatment device and / or the second gas treatment device.

[0009] In some examples, the pressure of the transfer chamber is greater than the pressure of the epitaxial reaction chamber, and the threshold range is 2 Torr to 4 Torr.

[0010] In some examples, the epitaxial growth apparatus further includes a first control valve and a second control valve, The first control valve is arranged on a first connecting pipeline between the transfer chamber and the first gas processing device, and the second control valve is arranged on a second connecting pipeline between the epitaxial reaction chamber and the second gas processing device, so as to control the opening of the first connecting pipeline and the second connecting pipeline respectively.

[0011] In some examples, the first control valve and the second control valve are both solenoid valves.

[0012] In some examples, the control device is further configured to determine whether a failure occurs in the first gas processing device and the second gas processing device.

[0013] In some examples, the first gas processing device and the second gas processing device are both wet scrubbers.

[0014] In a second aspect, the present disclosure provides an epitaxial growth method, which can be applied to the epitaxial growth device described in the first aspect.

[0015] In a third aspect, the present disclosure provides an epitaxial wafer, which is manufactured by the epitaxial growth equipment according to the first aspect, and the particle content in the edge area of ​​the epitaxial wafer is in the range of 0 to 2 particles.

[0016] The present disclosure provides epitaxial growth equipment, epitaxial growth method and epitaxial wafer. By setting a control device in the epitaxial growth equipment, and by using the control device to quickly interrupt the connection between the transfer chamber and the first gas processing device and the connection between the epitaxial reaction chamber and the second gas processing device when a failure occurs in the first gas processing device or the second gas processing device, on the one hand, it is possible to prevent abnormal fluctuations in the pressure difference between the epitaxial reaction chamber and the transfer chamber, maintain the pressure balance between the transfer chamber and the epitaxial reaction chamber, and ensure the stability of the internal environment of the epitaxial growth equipment. On the other hand, it is possible to perform shutdown maintenance in a timely manner to avoid causing greater losses. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1It is a structural schematic diagram of an epitaxial growth device in the related art.

[0018] Figure 2 It is another structural schematic diagram of the epitaxial growth equipment in the related art.

[0019] Figure 3 A curve showing a change in the pressure difference between the transfer chamber and the epitaxial reaction chamber provided in an embodiment of the present disclosure.

[0020] Figure 4 A particle defect morphology image of an edge region of an epitaxial wafer provided in an embodiment of the present disclosure.

[0021] Figure 5 A schematic structural diagram of an epitaxial growth device provided in an embodiment of the present disclosure.

[0022] Figure 6 A schematic flow chart of an epitaxial growth method provided in an embodiment of the present disclosure.

[0023] Figure 7 The diagram is a comparison of LLS stacking images of the surface of the epitaxial wafer with a size larger than 200 nm, which are respectively manufactured by the epitaxial growth equipment in the related art and the epitaxial growth equipment in the present disclosure. DETAILED DESCRIPTION

[0024] The technical solutions in the present disclosure will be described clearly and completely below in conjunction with the accompanying drawings in the present disclosure.

[0025] It should be noted that, for the sake of clarity, not all features of a specific implementation are described and illustrated in the specification and drawings. Furthermore, in order to avoid unnecessary details that obscure the technical solution focused on by the present disclosure, only the device structures and parts closely related to the technical solution of the present disclosure are described and illustrated in the specification and drawings, while other details that are not closely related to the technical content of the present disclosure and are known to those skilled in the art are omitted.

[0026] Unless otherwise defined, the technical terms used in the present disclosure should be understood as the common meanings known to those of ordinary skill in the art to which the present disclosure belongs. The terms "first", "second", etc. in the present disclosure do not indicate any order, but are only used for distinction.

[0027] See also Figure 1, which shows a structural schematic diagram of an epitaxial growth device 1A in the related art, wherein the epitaxial growth device 1A includes two epitaxial reaction chambers (Process Chamber) 10, a transfer chamber (Transfer Chamber) 20, two load lock units (Load Lock) 30, a front-end module (Factory Interface) 40 and three loading ports (Load Port) 50.

[0028] In some examples, epitaxial reaction chamber 10 is in communication with transfer chamber 20 .

[0029] In some examples, the load lock unit 30 is used to implement a switch between the atmospheric environment and the nitrogen environment filled in the transfer chamber 20 .

[0030] Furthermore, in some examples, the front end module 40 is used to enable transfer of wafers between the load port 50 and the transfer chamber 20 .

[0031] It should be noted that the two epitaxial reaction chambers 10 can be operated independently, and the two load lock units 30 can also be operated independently.

[0032] During epitaxial growth, the wafer to be epitaxially grown is Figure 1 The route indicated by the solid arrow is transferred to the epitaxial reaction chamber 10. Specifically, the front-end module 40 transfers the wafer to be epitaxially grown from the loading port 50 to the load lock unit 30. Afterwards, the transfer device (not shown in the figure) located in the transfer chamber 20 transfers the wafer to be epitaxially grown in the load lock unit 30 through the transfer chamber 20 to the epitaxial reaction chamber 10, and performs a vapor deposition reaction in the epitaxial reaction chamber 10. After the vapor deposition reaction is completed, the epitaxial wafer manufactured is Figure 1 The route indicated by the dashed arrow returns to the load port 50 for unloading.

[0033] It should be noted that in Figure 1 Only two epitaxial reaction chambers 10 are shown in the epitaxial growth device 1A, but in a specific implementation, the epitaxial growth device 1A may include multiple epitaxial reaction chambers 10, and the present disclosure does not specifically limit the number of epitaxial reaction chambers 10 in the epitaxial growth device 1A.

[0034] In addition, if Figure 2As shown, the epitaxial growth device 1A further includes a first gas treatment device 60 connected to the transfer chamber 20, a second gas treatment device 70 connected to the epitaxial reaction chamber 10, and a gas heating treatment device 80 connected to the second gas treatment device 70. In some examples, the first gas treatment device 60 and the second gas treatment device 70 can both be wet scrubbers, which use wet substances, such as ultrapure water, to remove acidic gases from the gas discharged from the transfer chamber 20 and the epitaxial reaction chamber 10. The gas heating treatment device 80 can be an electric heating device (Heat Scrubber), which is used to heat the gas discharged from the second gas treatment device 70 to improve the physical or chemical properties of the gas by heating, so as to meet the emission standards.

[0035] In a specific implementation process, the gas exhausted from the transfer chamber 20, such as N 2 and other reaction byproduct gases are processed by the first gas processing device 60 and then discharged out of the epitaxial growth device 1A. The gas discharged from the epitaxial reaction chamber 10, such as the carrier gas (e.g., H 2 ), doping gases (such as B 2 H 6 ), silicon source gas (such as TCS) and etching gas (such as HCl), etc., are transported to the gas heating treatment device 80 for treatment after being processed by the second gas treatment device 70, and finally discharged from the epitaxial growth equipment 1A.

[0036] When the gas supply device 90 in the epitaxial growth equipment 1A is turned on, it is necessary to monitor in real time whether the first gas processing device 60 and the second gas processing device 70 have any faults, and even if the first gas processing device 60 and the second gas processing device 70 have not failed, it is also necessary to monitor in real time the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10.

[0037] It should be noted that the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 refers to the difference between the pressure of the transfer chamber 20 and the pressure of the epitaxial reaction chamber 10 when the pressure of the transfer chamber 20 is greater than the pressure of the epitaxial reaction chamber 10 .

[0038] In addition, see Figure 3 , which shows the change curve of the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10. In stage I, the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 is stable in the range of 2 Torr to 4 Torr. In stage II, the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 gradually decreases and is no longer in the range of 2 Torr to 4 Torr. In stage III, the pressure difference is adjusted to remain in the range of 2 Torr to 4 Torr.

[0039] However, the inventors have found that particle defects may appear in the edge area of ​​the epitaxial wafer prepared after the pressure difference is adjusted. Figure 4 As shown. By performing scanning electron microscope (SEM) analysis on the chemical composition of the above particles, it can be obtained that Figure 4 The chemical components of particle A are mainly C and Si, and the chemical components of particle B are mainly C, Si, and O. Therefore, it can be obtained that the defect type corresponding to the particle defect in the edge area of ​​the epitaxial wafer is an extrinsic stacking fault (ESF). This is mainly because the reaction byproducts in the connecting pipeline between the epitaxial reaction chamber 10 and the second gas treatment device 70 flow back to the epitaxial reaction chamber 10, so that the reaction byproducts are transmitted to the edge area of ​​the epitaxial wafer as a contamination source during the vapor deposition reaction, resulting in particle defects in the edge area of ​​the prepared epitaxial wafer.

[0040] Specifically, in stage II, since the pressure of the transfer chamber 20 is lower than the pressure of the epitaxial reaction chamber 10, when the wafer to be epitaxially grown or the epitaxial wafer is transferred between the transfer chamber 20 and the epitaxial reaction chamber 10, the gas in the epitaxial reaction chamber 10 will flow into the transfer chamber 20. In this case, the reaction byproducts in the connecting pipeline between the epitaxial reaction chamber 10 and the second gas treatment device 70 will flow back into the epitaxial reaction chamber 10 and the transfer chamber 20, so that these reaction byproducts are transferred to the edge region of the wafer to be epitaxially grown as a pollution source during the vapor deposition reaction, and finally cause particle defects in the edge region of the prepared epitaxial wafer.

[0041] Based on the above description, if Figure 5 As shown, the present disclosure provides an epitaxial growth device 1, which specifically includes: Transfer chamber 20; Epitaxial reaction chamber 10; a first gas processing device 60, in communication with the transfer chamber 20, for processing the gas exhausted therefrom; a second gas processing device 70, connected to the epitaxial reaction chamber 80, to process the gas exhausted therefrom; The control device 100 is configured to: In the event of a failure in either the first gas processing device 60 or the second gas processing device 70 , the communication between the transfer chamber 20 and the first gas processing device 60 and the communication between the epitaxial reaction chamber 10 and the second gas processing device 70 are interrupted.

[0042] In the present disclosure, a control device 100 is provided in the epitaxial growth apparatus 1, and the control device 100 quickly interrupts the communication between the transfer chamber 20 and the first gas processing device 60 and the communication between the epitaxial reaction chamber 10 and the second gas processing device 70 when a failure occurs in the first gas processing device 60 or the second gas processing device 70. It can be understood that in this case, quickly interrupting the communication between the transfer chamber 20 and the first gas processing device 60 and the communication between the epitaxial reaction chamber 10 and the second gas processing device 70 can help to avoid potential dangers caused by, for example, gas processing failures, such as pressure imbalance. Specifically, when a failure occurs in the first gas processing device 60 or the second gas processing device 70, it indicates that the first gas processing device 60 or the second gas processing device 70 cannot process the gas discharged from the transfer chamber 20 or the epitaxial reaction chamber 10 in a timely manner. Taking the failure of the second gas processing device 70 as an example, when the second gas processing device 70 fails, it means that the second gas processing device 70 cannot process the gas discharged from the epitaxial reaction chamber 10 in time, and even the reaction by-product gas in the epitaxial reaction chamber 10 cannot be discharged in time, thereby increasing the pressure of the epitaxial reaction chamber 10 until the pressure of the epitaxial reaction chamber 10 is greater than the pressure of the transfer chamber 20, thereby causing the reaction by-product gas in the connecting pipeline between the epitaxial reaction chamber 10 and the second gas processing device 70 to flow back into the epitaxial reaction chamber 10 and the transfer chamber 20. Therefore, it can be understood that when a failure occurs in the first gas processing device 60 or the second gas processing device 70, by quickly interrupting the connection between the transfer chamber 20 and the first gas processing device 60 and the connection between the epitaxial reaction chamber 10 and the second gas processing device 70, it is possible to prevent abnormal fluctuations in the pressure difference between the epitaxial reaction chamber 10 and the transfer chamber 20, maintain the pressure balance between the transfer chamber 20 and the epitaxial reaction chamber 10, and ensure the stability of the internal environment of the epitaxial growth equipment 1.

[0043] In addition, when the first gas processing device 60 or the second gas processing device 70 fails, by quickly interrupting the connection between the transfer chamber 20 and the first gas processing device 60 and the connection between the epitaxial reaction chamber 10 and the second gas processing device 70, shutdown maintenance can be performed in time to avoid causing greater losses.

[0044] It should be noted that the control device 100 can be a wireless device, a personal digital assistant (PDA), a video game console (including a video display, a mobile video game device, a mobile video conferencing unit), a laptop computer, a desktop computer, a TV set-top box, a tablet computing device, an e-book reader, a setting or a mobile media player, etc.

[0045] In some possible implementations, the control device 100 is further configured to: When neither the first gas processing device 60 nor the second gas processing device 70 fails and the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 is within a preset threshold range, the pressure difference is controlled to be within the threshold range.

[0046] Based on the above, once the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 fluctuates abnormally, for example, when it is not within the preset threshold range, the reaction byproduct gas in the connecting pipeline between the epitaxial reaction chamber 10 and the second gas processing device 70 will flow back into the epitaxial reaction chamber 10 and the transfer chamber 20. Therefore, in the present disclosure, the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 is precisely controlled by the control device 100 to be within the above threshold range, which can help optimize the epitaxial growth conditions and ensure the stability of the gas flow and reaction rate during the entire epitaxial growth process, thereby reducing the defects of the epitaxial wafer and improving the quality of the epitaxial wafer.

[0047] In addition, when the pressure difference is not within the threshold range, the control device 100 can timely adjust the pressure difference to be within the threshold range, thereby enhancing the stability of the entire epitaxial growth process, helping to reduce the number of interruptions in the epitaxial production process and improving production efficiency.

[0048] For the above implementation, in some examples, the control device 100 is further configured to: The pressure difference is made to be within the threshold range by controlling the suction force of the first gas treatment device 60 and / or the second gas treatment device 70 .

[0049] First, it should be noted that the first gas treatment device 60 and the second gas treatment device 70 in the present disclosure both have a suction adjustment function. Specifically, for example, if the suction of the second gas treatment device 70 is increased, the pressure of the connecting pipeline between the epitaxial reaction chamber 10 and the second gas treatment device 70 will decrease, and then the pressure of the epitaxial reaction chamber will also decrease.

[0050] Based on this, when the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 is not within the threshold range, the control device 100 adjusts the suction of the first gas processing device 60 and / or the second gas processing device 70 to dynamically adjust the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 so that it is maintained within the preset threshold range. This not only can accurately control the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 so that the pressure difference is maintained within the optimal range, thereby reducing production interruptions and degradation of epitaxial wafer quality caused by pressure fluctuations in the transfer chamber 20 or the epitaxial reaction chamber 10, but also improves the adaptability of the epitaxial growth equipment 1 to different pressure difference requirements.

[0051] For the above-mentioned embodiments, in some examples, the pressure of the transfer chamber 20 is greater than the pressure of the epitaxial reaction chamber 10 , and the threshold range is 2 Torr to 4 Torr.

[0052] This is because by setting the pressure of the transfer chamber 20 to be greater than the pressure of the epitaxial reaction chamber 10 and maintaining the pressure difference within the threshold range of 2 Torr to 4 Torr, the stability and controllability of the gas flow during the epitaxial growth process can be ensured, and the gas in the connecting pipeline between the epitaxial reaction chamber 10 and the second gas processing device 70 can be prevented from flowing back into the epitaxial reaction chamber 10 and the transfer chamber 20, thereby avoiding potential contamination and equipment damage.

[0053] For the above implementations, in some examples, such as Figure 5 As shown, the epitaxial growth device 1 further includes a first control valve 51 and a second control valve 52. The first control valve 51 is arranged on the first connecting pipeline 53 between the transfer chamber 20 and the first gas processing device 60, and the second control valve 52 is arranged on the second connecting pipeline 54 between the epitaxial reaction chamber 10 and the second gas processing device 70, so as to control the opening of the first connecting pipeline 53 and the second connecting pipeline 54 respectively.

[0054] In some examples, taking the opening of the first communication line 53 as an example, the opening of the first communication line 53 refers to the flow rate and flow velocity of the gas passing through the first communication line 53, which is determined by the opening degree of the first control valve 51. It can be understood that the larger the opening, the greater the flow rate and flow velocity of the gas passing through the first communication line 53; conversely, the smaller the opening, the smaller the flow rate and flow velocity of the gas passing through the first communication line 53. In specific numerical form, the opening is usually expressed in percentage form, where 0% means that the communication between the transfer chamber 20 and the first gas processing device is completely interrupted, that is, the first control valve 51 is completely closed; 100% means that the communication between the transfer chamber 20 and the first gas processing device is completely connected, that is, the first control valve 51 is fully opened.

[0055] It can be understood that by providing the first control valve 51 on the first communication line 53 and the second control valve 52 on the second communication line 54, the first control valve 51 and the second control valve 52 are used to control the opening of the first communication line 53 and the second communication line 54 to realize the opening or closing of the first communication line 53 and the second communication line 54. Specifically, on the one hand, in the case of failure of the first gas processing device 60 or the second gas processing device 70, the first control valve 51 and the second control valve 52 are controlled to close the first communication line 53 and the second communication line 54, that is, the communication between the transfer chamber 20 and the first gas processing device 60 and the epitaxial reaction chamber 10 and the second gas processing device 70 is interrupted, thereby avoiding the gas backflow phenomenon caused by the abnormal fluctuation of the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10. On the other hand, when the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 fluctuates, in addition to adjusting the above-mentioned pressure difference by adjusting the suction of the first gas processing device 60 and / or the second gas processing device 70 when the first connecting line 53 and the second connecting line 54 are opened, the opening of the first connecting line 53 and the second connecting line 54 can also be adjusted by the first control valve 51 and the second control valve 52 to achieve the above-mentioned pressure difference adjustment, thereby more accurately controlling the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10.

[0056] For the above example, optionally, both the first control valve 51 and the second control valve 52 are solenoid valves.

[0057] It is understandable that the solenoid valve drives the valve to open or close by generating electromagnetic force through the electromagnetic coil. In the present disclosure, the first control valve 51 and the second control valve 52 are both solenoid valves, which can quickly respond to the control signal of the control device 100 to achieve rapid control of the first connecting pipeline 53 and the second connecting pipeline 54. In addition, the first control valve 51 and the second control valve 52 are both solenoid valves that can be easily interfaced with the control device 100 to achieve rapid signal transmission, thereby achieving remote control and intelligent management.

[0058] In some possible implementations, the control device 100 is further configured to determine whether the first gas processing device 60 and the second gas processing device 70 fail.

[0059] In the present disclosure, the control device 100 determines whether a fault occurs in the first gas processing device 60 and the second gas processing device 70, so that the chamber where the fault occurs can be quickly located, and the connection between the transfer chamber 20 and the first gas processing device 60 and the connection between the epitaxial reaction chamber 10 and the second gas processing device 70 can be interrupted in time, thereby improving the fault handling efficiency.

[0060] In some possible implementations, both the first gas processing device 60 and the second gas processing device 70 are wet scrubbers.

[0061] In addition, the present disclosure also provides an epitaxial growth method, which can be applied to the epitaxial growth device 1 described in the aforementioned technical solution.

[0062] Specifically, the epitaxial growth method provided by the present disclosure is as follows Figure 6 As shown: In step S601 , the gas supply device 90 is turned on.

[0063] In step S602, the control device 100 determines whether the first gas processing device 60 and the second gas processing device 70 have a fault. If so, step S603 is executed and then step S604 is executed. If not, step S605 is executed.

[0064] In step S603 , the first communication line 53 and the second communication line 54 are closed by the first control valve 51 and the second control valve 52 .

[0065] In step S604 , when the first gas treatment device 60 and the second gas treatment device 70 fail, the epitaxial growth apparatus 1 is shut down for inspection and maintenance.

[0066] In step S605 , the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 is monitored by the control device 100 .

[0067] In step S606, it is determined whether the pressure difference is within a preset threshold range. If so, step S607 is executed; if not, step S608 or step S609 is executed.

[0068] In step S607 , an epitaxial wafer is prepared.

[0069] In step S608 , the pressure difference is adjusted by adjusting the suction force of the first gas treatment device 60 and / or the second gas treatment device 70 .

[0070] In step S609 , the pressure difference is adjusted by adjusting the openings of the first communication line 53 and the second communication line 54 through the first control valve 51 and the second control valve 52 .

[0071] It is understandable that when adjusting the pressure difference between the transfer chamber 20 and the epitaxial reaction chamber 10 through step S608 or step S609, it is still necessary to determine in real time whether the pressure difference is within the preset threshold range. If so, execute step S607; if not, continue to execute step S608 or step S609.

[0072] Finally, the present disclosure also provides an epitaxial wafer W, which is manufactured by the epitaxial growth device 1 according to the aforementioned technical solution, and the particle content in the edge area of ​​the epitaxial wafer W is in the range of 0 to 2 particles.

[0073] See also Figure 7 , which shows the comparison of the localized light scattering defects (LLS) with a size greater than 200 nm on the surface of the epitaxial wafers manufactured by the epitaxial growth device 1A and the epitaxial growth device 1, respectively, for characterizing the particle content on the surface of the epitaxial wafer. Figure 7 It can be seen that the number of particles in the edge area of ​​the LLS overlay of the epitaxial wafer 200nm manufactured by the epitaxial growth device 1 provided by the present disclosure is significantly reduced. It should be noted that the epitaxial wafer ( Figure 7 The average particle content of the edge area of ​​the 200nm LLS overlay is 0.37 particles / piece. The epitaxial wafer ( Figure 7 The average particle content in the edge area of ​​the 200nm LLS overlay is 0.18 particles / wafer, which further illustrates that the technical solution provided by the present disclosure can improve the cleanliness inside the epitaxial growth equipment 1, especially the cleanliness inside the transfer chamber 20 and the epitaxial reaction chamber 10, reduce the particle content in the edge area of ​​the epitaxial wafer, and improve the performance of the prepared epitaxial wafer.

[0074] It should be noted that the technical solutions described in the present disclosure can be combined arbitrarily without conflict.

[0075] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. An epitaxial growth device, characterized in that: The epitaxial growth equipment comprises: transfer chamber; Epitaxial reaction chamber; a first gas processing device in communication with the transfer chamber to process the gas exhausted therefrom; a second gas processing device, connected to the epitaxial reaction chamber to process the gas exhausted therefrom; A control device configured to: In the event of a failure in either the first gas processing device or the second gas processing device, the communication between the transfer chamber and the first gas processing device and the communication between the epitaxial reaction chamber and the second gas processing device are interrupted.

2. The epitaxial growth device according to claim 1, characterized in that: The control device is also configured to: When neither the first gas processing device nor the second gas processing device fails and the pressure difference between the transfer chamber and the epitaxial reaction chamber is not within a preset threshold range, the pressure difference is controlled to be within the threshold range.

3. The epitaxial growth device according to claim 2, characterized in that: The control device is also configured to: The pressure difference is made to be within the threshold range by controlling the suction force of the first gas treatment device and / or the second gas treatment device.

4. The epitaxial growth device according to claim 2 or 3, characterized in that: The pressure of the transfer chamber is greater than the pressure of the epitaxial reaction chamber, and the threshold range is 2 Torr to 4 Torr.

5. The epitaxial growth apparatus according to any one of claims 1 to 3, characterized in that: The epitaxial growth device further includes a first control valve and a second control valve, The first control valve is arranged on a first connecting pipeline between the transfer chamber and the first gas processing device, and the second control valve is arranged on a second connecting pipeline between the epitaxial reaction chamber and the second gas processing device, so as to control the opening of the first connecting pipeline and the second connecting pipeline respectively.

6. The epitaxial growth device according to claim 5, characterized in that: The first control valve and the second control valve are both solenoid valves.

7. The epitaxial growth apparatus according to any one of claims 1 to 3, characterized in that: The control device is further configured to determine whether a failure occurs in the first gas processing device and the second gas processing device.

8. The epitaxial growth device according to claim 1, characterized in that: The first gas treatment device and the second gas treatment device are both wet scrubbers.

9. An epitaxial growth method, characterized in that: The epitaxial growth method can be applied to the epitaxial growth apparatus according to any one of claims 1 to 8.

10. An epitaxial wafer, characterized in that: The epitaxial wafer is manufactured by the epitaxial growth device according to any one of claims 1 to 8, and the particle content in the edge region of the epitaxial wafer is in the range of 0 to 2 particles.

Images