A high heat dissipation LED device and preparation method thereof

Abstract

The present invention discloses a high heat dissipation LED device and a preparation method, the high heat dissipation LED device comprises: a metal substrate, a chip solidification region and an electrical separation substrate independently distributed on the metal substrate; the metal substrate is raised to form a boss, the top surface of the boss is configured as the chip solidification region, and an LED chip is arranged in the chip solidification region; a circuit layer is arranged on the electrical separation substrate, and the LED chip is electrically connected to the circuit layer based on a welding wire. The boss is arranged on the metal substrate to solidify the LED chip, so that the working heat of the LED chip can be directly dissipated through the metal substrate, and the LED chip and the circuit layer are independently distributed, so that the working heat of the circuit layer is reduced, thereby reducing the accumulation of working heat of the circuit layer and improving the heat dissipation efficiency of the LED device.

Description

Technical Field

[0001] The present invention relates to the technical field of high heat dissipation LED devices, and in particular to a high heat dissipation LED device and a preparation method thereof. Background Art

[0002] Current high-power LED devices mainly increase the heat dissipation area of ​​the LED chip by bonding the LED chip to the circuit board and increasing the exposed metal area of ​​the LED device through methods such as fan-out electrodes.

[0003] Due to the existing integrated packaging, for high-power LED devices, LED chips and electronic components are integrated on the circuit board, resulting in the accumulation of working heat on the circuit board of the LED device. The heat generated by the working LED chip is dissipated through the circuit board, substrate and bottom electrode, and the heat dissipation effect needs to be improved. Summary of the invention

[0004] The purpose of the present invention is to overcome the shortcomings of the prior art. The present invention provides a high heat dissipation LED device and a preparation method. By setting a metal boss and an electrically separated substrate, the LED chip and the circuit layer are arranged independently of each other, so that the LED chip is directly solid-die on the metal substrate, thereby improving the heat dissipation efficiency of the LED device and reducing heat accumulation in the circuit layer.

[0005] The present invention provides an integrated packaging structure of a high heat dissipation LED device, wherein the high heat dissipation LED device comprises: a metal substrate, a chip bonding region and an electrical separation substrate independently distributed on the metal substrate;

[0006] The metal substrate is raised to form a boss, the top surface of the boss is configured as the chip bonding area, and the LED chip is arranged in the chip bonding area;

[0007] A circuit layer is disposed on the electrical separation substrate, and the LED chip is electrically connected to the circuit layer based on bonding wires.

[0008] Furthermore, the thickness of the boss is the same as that of the electrical separation substrate, so that the chip bonding area and the top surface of the electrical separation substrate are on the same horizontal plane.

[0009] Further, the electrical separation substrate comprises an insulating layer, a circuit layer arranged on the top surface of the substrate body, and a bottom metal layer covering the bottom surface of the substrate body;

[0010] The electrically separated substrate is connected to the metal substrate based on the bottom metal layer.

[0011] Furthermore, the insulating layer is made of ceramic or glass fiber.

[0012] Furthermore, the coverage area of ​​the circuit layer is smaller than the top surface area of ​​the insulating layer;

[0013] The coverage area of ​​the bottom metal layer is smaller than the bottom surface area of ​​the insulating layer.

[0014] Furthermore, one side wall of the insulating layer is connected to one side wall of the boss;

[0015] The metal substrate, the insulating layer and the bottom metal layer surround and form a gap.

[0016] Furthermore, the insulating layer is provided with a plurality of first through holes at positions corresponding to the gaps;

[0017] The diameter of the first through hole is d1, and the value range of d1 is: 50um<d1≤150um.

[0018] Further, the distance between any two adjacent first through holes is L;

[0019] The constraint relationship between L and d1 is: 1.5d1≤L.

[0020] Furthermore, a groove is provided on the metal substrate, and the groove is provided in the covering area of ​​the bottom metal layer;

[0021] And the length direction of the groove is consistent with the length direction of the gap.

[0022] Furthermore, the width of the groove is w1, and the value range of w1 is: 100um<w1≤150um.

[0023] Furthermore, the depth of the groove is h1, and the value range of h1 is: 50um

[0024] Furthermore, the metal substrate is provided with at least two second through holes, and the two second through holes are symmetrically distributed on two sides of the ceramic substrate.

[0025] Furthermore, the diameter of the second through hole is d2, and the value range of d2 is: 100um≤d2≤500um.

[0026] The present invention also provides a method for preparing a high heat dissipation LED device, the method for preparing the high heat dissipation LED device comprising:

[0027] S11: preparing a metal substrate, and forming a boss and an electrically isolated substrate mounting area on the metal substrate;

[0028] S12: Solidifying LED chips, performing a solidifying operation on LED chips on the convex platform of the metal substrate;​

[0029] S13: preparing an electrically separated substrate, disposing a top metal layer on the top surface of the insulating layer, disposing a bottom metal layer on the bottom surface of the insulating layer, and forming a circuit layer on the top metal layer by etching or electroplating;

[0030] S14: mounting the electrical separation substrate, bonding and fixing the electrical separation substrate in the electrical separation substrate mounting area of ​​the metal substrate;

[0031] S15: Wire bonding, achieving electrical connection between the LED chip and the circuit layer of the electrically separated substrate through wire bonding.

[0032] Furthermore, the step S11 includes:

[0033] A metal substrate frame is manufactured by a stamping die, wherein the metal substrate frame manufactured by the stamping die has a boss and an installation area of ​​the electrical separation substrate formed on the metal substrate;

[0034] A punching cutter of the punching die forms a groove on the metal substrate frame in a mounting area of ​​the electrical separation substrate.

[0035] Furthermore, the step S11 further includes:

[0036] The electrically separated substrate mounting region of the metal substrate is punched by laser punching or drilling equipment, so that the formed second through hole can be tangent to the side wall of the boss.

[0037] Furthermore, the step S12 includes:

[0038] Adhere and fix the LED chip on the boss of the metal substrate by adhesive;

[0039] Alternatively, the LED chip is solidified on the boss of the metal substrate by eutectic welding.

[0040] Furthermore, the step S14 includes:

[0041] A plurality of first through holes are processed on the insulating layer of the electrical separation substrate by a laser perforation process, and then the electrical separation substrate is mounted on the metal substrate.

[0042] The present invention provides a high heat dissipation LED device and a preparation method thereof, wherein a boss is arranged on a metal substrate to perform crystal bonding on an LED chip, so that the working heat of the LED chip can be directly dissipated through the metal substrate, and the LED chip and a circuit layer are distributed independently of each other, so that the working heat of the circuit layer is reduced, thereby reducing the accumulation of working heat of the circuit layer and improving the heat dissipation efficiency of the LED device. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0044] Figure 1 is a structural side view of a high heat dissipation LED device in an embodiment of the present invention;

[0045] Figure 2 is a top view of the structure of a high heat dissipation LED device in an embodiment of the present invention;

[0046] Figure 3 is a heat distribution state diagram of the metal substrate structure 1 in an embodiment of the present invention;

[0047] Figure 4 is a heat distribution state diagram of the metal substrate structure 2 in an embodiment of the present invention;

[0048] Figure 5 is a heat distribution state diagram of the metal substrate structure three in an embodiment of the present invention;

[0049] Figure 6 is a heat distribution state diagram of the metal substrate structure 4 in an embodiment of the present invention;

[0050] Figure 7 It is a schematic diagram of the heat distribution state of existing high-power LED devices;

[0051] Figure 8 is a schematic diagram of the heat distribution state of the LED device in an embodiment of the present invention;

[0052] Fig. 9 is a schematic diagram of the structure of an electrical separation substrate in an embodiment of the present invention;

[0053] Fig.10 In the embodiment of the present invention, Fig. 9 A magnified schematic diagram of point A;

[0054] Fig.11 This is a schematic diagram of the defective structure of the LED device packaging structure;

[0055] Fig.12 is a top view of the structure of the metal substrate in an embodiment of the present invention;

[0056] Fig.13 It is a flow chart of the method for preparing a high heat dissipation LED device in an embodiment of the present invention. DETAILED DESCRIPTION

[0057] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0058] Embodiment 1:

[0059] Specifically, Figure 1 A schematic diagram of a high heat dissipation LED device in an embodiment of the present invention is shown. Figure 2 The structure top view of the high heat dissipation LED device in the embodiment of the present invention is shown, and the high heat dissipation LED device comprises: a metal substrate 1, a chip bonding area and an electrical separation substrate independently distributed on the metal substrate 1.

[0060] The metal substrate 1 is raised to form a boss 11, the top surface of the boss 11 is configured as the chip bonding area, and the LED chip 2 is arranged in the chip bonding area;

[0061] A circuit layer 31 is provided on the electrically separated substrate, and the LED chip 2 is electrically connected to the circuit layer 31 based on welding wires. The LED chip 2 and the circuit layer 31 are arranged separately through the independently distributed chip bonding areas and the electrically separated substrate. The LED chip 2 is directly bonded to the metal substrate 1, which can improve the heat dissipation efficiency of the LED chip 2.

[0062] Furthermore, the chip and the circuit layer 31 of the electrically separated substrate are separated so that the working heat of the circuit layer 31 of the electrically separated substrate is reduced, thereby reducing the heat accumulation of the electrically separated substrate, dissipating the heat inside the LED packaging device, and improving the heat dissipation efficiency.

[0063] Specifically, the thickness of the boss 11 is the same as the thickness of the electrical separation substrate, so that the chip bonding area and the top surface of the electrical separation substrate are on the same horizontal plane, and the top surface of the boss 11 is flush with the top surface of the circuit layer 31 of the electrical separation substrate. When the plastic encapsulation mold is used for molding, it can be ensured that the molding column of the mold can be synchronously and smoothly connected with the top surface of the boss 11 and the top surface of the circuit layer 31, thereby ensuring that a light output channel is formed in the area where the LED chip 2 is located during the molding process.

[0064] Furthermore, by setting the chip bonding area and the top surface of the electrical separation substrate on the same horizontal plane, it is ensured that when the LED device is plastic-encapsulated, the contact pressure of the plastic encapsulation mold on the boss 11 of the metal substrate 1 and the circuit layer 31 of the electrical separation substrate remains stable, thereby ensuring the plastic encapsulation reliability of the LED device.

[0065] Specifically, Figure 3 It shows a heat distribution state diagram of the metal substrate structure 1 in an embodiment of the present invention; Figure 4 It shows the heat distribution state diagram of the metal substrate structure 2 in the embodiment of the present invention; Figure 5 It shows the heat distribution state diagram of the metal substrate structure three in the embodiment of the present invention; Figure 6 The heat distribution state diagram of the metal substrate structure 4 in the embodiment of the present invention is shown; the shape and size of the boss 11 can be adjusted according to the packaging requirements of the LED device, and bosses 11 of different sizes have different heat dissipation effects on the LED chip 2. In this embodiment, the heat distribution state is analyzed based on the shape and size ratio of the boss 11 of the metal substrate 1, and the analysis data is as follows:

[0066] Table 1 Comparison of heat distribution under different heat dissipation areas

[0067] Structure 1 Structure 2 Structure Three Area (S1>S2>S3) S1 S2 S3 Temperature(max) 112.3℃ 125.7℃ 136.5℃

[0068] Table 2 Comparison of thermal distribution states of different metal substrate 1 thicknesses under the same heat dissipation area

[0069]

[0070]

[0071] It can be seen from the above table that the overall heat dissipation effect of the LED device can be improved by increasing the water sheet heat dissipation area of ​​the boss 11 and the overall thickness of the metal substrate 1 .

[0072] Furthermore, Figure 7 The figure shows the heat distribution state of the existing high-power LED device. Figure 8 A schematic diagram of the thermal distribution state of the LED device in the embodiment of the present invention is shown. In this embodiment, the size of the boss 11 is matched with the size of the metal substrate 1, and a step structure is formed in conjunction with the installation position of the electrical separation substrate on the metal substrate 1, so that the LED device is easy to be plastic-sealed and packaged, thereby improving the convenience of connecting the LED device with external electrical devices.

[0073] The comparative analysis of the heat distribution state of the existing high-power LED device and the LED device in the embodiment of the present invention is shown in the following table:

[0074] Table 3: Comparison of thermal distribution between the existing LED device structure and the LED device structure of the embodiment of the present invention

[0075] Existing LED devices LED device of the present invention Area (S5<S6) S5 S6 Temperature(max) 114.4℃ 109.7℃

[0076] Furthermore, by directly bonding the LED chip 2 onto the boss 11 of the metal substrate 1 , the working heat of the LED chip 2 can be directly dissipated through the metal substrate 1 by conduction, which can effectively improve the heat dissipation effect of the LED device.

[0077] Specifically, Fig. 9 shows a schematic structural diagram of an electrical separation substrate in an embodiment of the present invention, Fig.10 The embodiment of the present invention is shown in FIG. Fig. 9 In the enlarged schematic diagram at point A, the electrically separated substrate includes an insulating layer 32, a circuit layer 31 arranged on the top surface of the substrate body and a bottom metal layer 33 covering the bottom surface of the substrate body, and the electrically separated substrate is connected to the metal substrate 1 based on the bottom metal layer 33.

[0078] The electrically separated substrate can be welded on the metal substrate 1 based on the bottom metal layer 33, and the electrically separated substrate can be fixed on the metal substrate 1 by solder welding, so that the electrically separated substrate can be fixed on the metal substrate 1, and based on the bottom metal layer 33 and the metal substrate 1, the heat dissipation efficiency of the electrically separated substrate can be improved, thereby meeting the plastic sealing requirements of the LED device.

[0079] Furthermore, the material of the insulating layer 32 can be ceramic, which has high thermal conductivity and meets the heat dissipation requirements of the circuit layer 31 during operation. The ceramic substrate can withstand extreme temperatures without degradation, and its resistance temperature range is generally -55 to 850°C, which is suitable for the working environment and working heat conditions of LED devices.

[0080] The material of the insulating layer 32 can also be glass fiber. Glass fiber has a low thermal expansion coefficient and a high thermal conductivity coefficient, and has good thermal stability. Since the glass fiber material is not easily affected by the external ambient temperature, it can meet the use requirements of the working heating environment of the circuit layer 31 of the electrical separation substrate and meet the heat dissipation requirements of the circuit layer 31, so that the working heat of the electrical separation substrate can be dissipated to the bottom metal layer 33 and the metal substrate 1 along with the insulating layer 32, thereby improving the heat dissipation efficiency of the LED packaging device and reducing the internal heat accumulation of the LED device when it is working.

[0081] Specifically, a metal layer is formed on the top surface of the insulating layer 32 by chemical deposition. The material of the metal layer can be Cu copper metal. The circuit layer 31 structure is formed by etching on the copper metal layer, so that the electronic components of the LED device can be solid-chip on the circuit layer 31.

[0082] Furthermore, a metal protective film may be plated on the surface of the circuit layer 31 . The material of the metal protective film may be a metal material such as Ni nickel, Au gold, etc. By providing the metal protective film, the circuit layer 31 is protected from oxidation, thereby improving the reliability of the circuit layer 31 .

[0083] Specifically, the bottom metal layer 33 may be a metal copper layer, which is welded to the metal substrate 1 so that the metal substrate 1 and the electrical separation substrate have good structural connection stability and reliability.

[0084] The bottom metal layer 33 may also be a metal aluminum layer, which has good thermal conductivity and can meet the heat dissipation requirements of the combination of the electrical separation substrate and the metal substrate 1 .

[0085] Specifically, the coverage area of ​​the circuit layer 31 is smaller than the top surface area of ​​the insulating layer 32, and the coverage area of ​​the bottom metal layer 33 is smaller than the bottom surface area of ​​the insulating layer 32, that is, the orthographic projection area of ​​the circuit layer 31 and the bottom metal layer 33 is smaller than the orthographic projection area of ​​the insulating layer 32, thereby preventing the side walls of the electrically separated substrate from exposing the circuit layer 31 and the bottom metal layer 33, so that the side walls of the electrically separated substrate maintain insulation properties, avoid circuit short-circuiting, and improve the electrical connection stability of the electrically separated substrate.

[0086] Furthermore, the bottom metal layer 33 is connected to the metal substrate 1 based on solder paste. The electrical separation substrate is placed on the metal substrate 1 by coating solder paste on the corresponding area of ​​the metal substrate 1, and the electrical separation substrate and the metal substrate 1 are welded and fixed by a reflow process, so that the bonding structure between the electrical separation substrate and the metal substrate 1 can meet the heat dissipation requirements of the circuit layer 31 of the electrical separation substrate.

[0087] Furthermore, the electrically separated substrate and the metal substrate 1 can be fixed by silver paste mounting, by coating silver paste on the corresponding area of ​​the metal substrate 1, mounting the bottom metal electrode of the electrically separated substrate on the metal substrate 1, and achieving a fixed connection between the electrically separated substrate and the metal substrate 1 after heating and curing.

[0088] Specifically, one side wall of the insulating layer 32 is connected to one side wall of the boss 11; the metal substrate 1, the insulating layer 32 and the bottom metal layer 33 enclose a gap, and by configuring the side wall of the electrically separated substrate as an insulating side wall, the electrically separated substrate can be close to the side wall of the boss 11 of the metal substrate 1, which can reduce the distribution spacing between the boss 11 and the electrically separated substrate, so that the length of the welding wire connection between the LED chip 2 and the circuit layer 31 of the electrically separated substrate is shortened, that is, the wire bonding distance between the LED chip 2 and the circuit layer 31 is reduced, thereby improving the electrical connection stability between the LED chip 2 and the circuit layer 31.

[0089] Furthermore, the material of the bonding wire between the LED chip 2 and the circuit layer 31 can be Au gold, Al aluminum, Cu copper, Ag silver or the like.

[0090] Specifically, Fig.11 A schematic diagram of a defective product structure of an LED device packaging structure is shown. Since the flux used for welding the electrically separated substrate and the metal substrate 1 is easily volatilized by heat when the LED device is plastic-sealed, defective product structures such as bulging, pores, and bubbles appear during the plastic-sealing process of the LED device, affecting the packaging reliability and light-emitting performance of the LED device. In this embodiment, a plurality of first through holes 34 are provided at positions of the insulating layer 32 corresponding to the gaps. The first through holes 34 are used to conduct the gaps with the environment above the electrically separated substrate, so that during the plastic-sealing process of the LED device, volatile flux at the welding position of the electrically separated substrate and the metal substrate 1 can be discharged upward along the first through holes 34, thereby preventing the flux from expanding in the gap during heating, which causes bulging and damage to the LED device packaging structure.

[0091] Specifically, the diameter of the first through hole 34 is d1, and the value range of d1 is: 50um<d1≤150um, so that the first through hole 34 can meet the discharge requirement of the flux volatiles.

[0092] Furthermore, the spacing between any two adjacent first through holes 34 is L, and the constraint relationship between L and d1 is: 1.5d1≤L. Based on the fact that the spacing between any two adjacent first through holes 34 is at least 1.5 times the diameter of the first through holes 34, the arrangement density of the first through holes 34 is avoided to be too large, thereby ensuring the reliability of the matching structure between the insulating layer 32 and the metal substrate 1, and at the same time satisfying the heat dissipation of the gap position and the timely discharge of the flux volatiles.

[0093] Specifically, Fig.12A top view of the structure of the metal substrate in an embodiment of the present invention is shown, wherein a groove 13 is provided on the metal substrate 1, wherein the groove 13 is provided in the coverage area of ​​the bottom metal layer 33, and the length direction of the groove 13 is consistent with the length direction of the gap, and the width of the groove 13 is w1, and the value range of w1 is: 100um<w1≤150um.

[0094] The metal substrate 1 may be provided with more than two grooves 13, so that the covering position of the metal substrate 1 corresponding to the electrically separated substrate can accommodate sufficient solder, and based on the grooves 13, the flux volatilization path of the welding position between the metal substrate 1 and the electrically separated substrate can be increased, so as to clean the flux at the welding position between the electrically separated substrate and the metal substrate 1.

[0095] Furthermore, the depth of the groove 13 is h1, and the value range of h1 is: 50um

[0096] Specifically, the metal substrate 1 is provided with at least two second through holes 12, and the two second through holes 12 are symmetrically distributed on both sides of the ceramic substrate, and the second through holes 12 are tangent to the side walls of the boss 11, so that the second through holes 12 can be located on both sides of the gap, and the second through holes 12 on the metal substrate 1 are connected to the gap to form an exhaust channel, so that during the plastic sealing process of the LED device, the flux at the welding position of the electrically separated substrate and the metal substrate 1 can be volatilized by heat and discharged along the gap to the second through holes 12 on both sides.

[0097] Specifically, the diameter of the second through hole 12 is d2, and the value range of d2 is: 100um≤d2≤500um. Based on the second through hole 12, the connection channel between the gap and the external environment is improved, so that the flux at the welding connection position between the electrically separated substrate and the metal substrate 1 can be discharged to the outside along the gap and the second through hole 12 in time after being heated, thereby reducing the defective rate of the LED device.

[0098] The present invention provides a high heat dissipation LED device, in which a boss 11 is arranged on a metal substrate 1 to fix the LED chip 2, so that the working heat of the LED chip 2 can be directly dissipated through the metal substrate 1, and the LED chip 2 and the circuit layer 31 are distributed independently of each other, so that the working heat of the circuit layer 31 is reduced, thereby reducing the accumulation of working heat of the circuit layer 31 and improving the heat dissipation efficiency of the LED device.

[0099] Embodiment 2:​

[0100] Fig.13 The flowchart of the preparation method of the high heat dissipation LED device in the embodiment of the present invention is shown, and the preparation method comprises:

[0101] S11: preparing a metal substrate.

[0102] A metal substrate frame is manufactured by a stamping die. The metal substrate frame manufactured by the stamping die has a boss and an installation area of ​​the electrical separation substrate formed on the metal substrate.

[0103] Furthermore, a groove is formed on the metal substrate frame based on the punching tool of the punching die in the installation area of ​​the electrical separation substrate, and the groove is located at the covering position of the electrical separation substrate, so as to clean the solder flux after the electrical separation substrate is welded and fixed to the metal substrate.

[0104] Furthermore, at least two second through holes are punched on the metal substrate, and the electrical separation substrate mounting area of ​​the metal substrate is punched by laser drilling or drilling equipment, so that the formed second through holes can be tangent to the side wall of the boss, and the second through holes are located in the gap formed between the electrical separation substrate and the boss, so as to improve the convenience of cleaning and heating volatilization of the flux welded between the electrical separation substrate and the metal substrate.

[0105] S12: Solidify LED chips.

[0106] Mark the die-bonding position on the boss, place the LED chip on the die-bonding position of the boss, and die-bond the LED chip on the boss by adhesive.

[0107] Furthermore, the LED chip and the boss of the metal substrate may be eutectic welded so that the LED chip can be fixed on the boss of the metal substrate by die bonding.

[0108] S13: Prepare an electrically isolated substrate.

[0109] A ceramic substrate is selected as an insulating layer, and a top metal layer is deposited on the top surface of the insulating layer, and an etching operation is performed to etch the top metal layer to form a circuit layer. The etching operation can use laser etching to improve the convenience of circuit etching on the top metal layer; the etching operation can be performed by chemical etching based on a patterned mask to chemically etch the top metal layer so that the top metal layer can form a circuit layer.

[0110] Furthermore, the circuit layer structure may be formed by electroplating on the top surface of the insulating layer, and the electroplating operation is performed according to a preset pattern so that a metal plating layer is formed on the top surface of the insulating layer, thereby forming the circuit layer structure.

[0111] Furthermore, the material of the insulating layer may also be glass fiber, which has good thermal conductivity and can meet the preparation requirements of the electrical separation substrate.

[0112] Furthermore, electronic components are connected to the circuit layer, such as IC driver chips, so that when the LED chip is connected to the circuit layer, the electrical connection of the internal structure of the LED device can be achieved based on the circuit layer, thereby meeting the normal use requirements of the LED device.

[0113] S14: Mounting the electrical separation substrate.

[0114] Solder paste is coated on the metal substrate, the bottom metal layer of the electrically separated substrate is covered on the solder paste, and the electrically separated substrate and the metal substrate are welded and fixed by a reflow soldering process, so that the side wall of one side of the insulating layer of the electrically separated substrate is connected to the side wall of the boss, that is, the electrically separated substrate is attached to the side wall of the boss of the metal substrate.

[0115] Furthermore, the mounted electrical separation substrate further comprises:

[0116] A plurality of first through holes are processed on the insulating layer of the electrical separation substrate by a laser perforation process, and then the electrical separation substrate is mounted on the metal substrate.

[0117] Mark the side where the electrical separation substrate is connected to the side wall of the boss, apply the laser of the laser equipment to the gap position between the circuit layer and the boss, and perform laser drilling operation on the insulating layer at the corresponding position to form a plurality of the first through holes, and mount the electrical separation substrate with the first through holes on the metal substrate so that the plurality of the first through holes are located at the corresponding gap positions between the electrical separation substrate and the boss.

[0118] S15: Wire connection.

[0119] Wires are bonded to the top electrodes of the LED chip, and welding wires are led out to connect to the circuit layer of the electrical separation substrate.

[0120] Furthermore, a metal wire is selected, a gold ball is formed at one end of the metal wire, and then the gold ball is welded to the top surface electrode of the LED chip, and then the metal wire is led to the circuit layer of the electrically separated substrate for welding, thereby realizing the welding operation of the LED chip and the circuit layer of the electrically separated substrate.

[0121] Furthermore, the material of the metal wire can be gold, aluminum, copper, silver, etc., which can meet the electrical connection requirements between the LED chip and the circuit layer.

[0122] The present invention provides a method for preparing a high heat dissipation LED device, wherein a boss is arranged on a metal substrate to perform crystal bonding on an LED chip, so that the working heat of the LED chip can be directly dissipated through the metal substrate, and the LED chip and a circuit layer are distributed independently of each other, so that the working heat of the circuit layer is reduced, thereby reducing the accumulation of working heat of the circuit layer and improving the heat dissipation efficiency of the LED device.

[0123] In addition, the embodiments of the present invention are described in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A high heat dissipation LED device, characterized in that: The high heat dissipation LED device comprises: a metal substrate, a chip bonding area and an electrical separation substrate independently distributed on the metal substrate; The metal substrate is raised to form a boss, the top surface of the boss is configured as the chip bonding area, and the LED chip is arranged in the chip bonding area; A circuit layer is disposed on the electrical separation substrate, and the LED chip is electrically connected to the circuit layer based on bonding wires.

2. The high heat dissipation LED device according to claim 1, characterized in that: The thickness of the boss is the same as that of the electrical isolation substrate, so that the chip bonding area and the top surface of the electrical isolation substrate are on the same horizontal plane.

3. The high heat dissipation LED device according to claim 1, characterized in that: The electrical separation substrate comprises an insulating layer, a circuit layer arranged on the top surface of the substrate body, and a bottom metal layer covering the bottom surface of the substrate body; The electrically separated substrate is connected to the metal substrate based on the bottom metal layer.

4. The high heat dissipation LED device according to claim 3, characterized in that: The insulating layer is made of ceramic or glass fiber.

5. The high heat dissipation LED device according to claim 3, characterized in that: The coverage area of ​​the circuit layer is smaller than the top surface area of ​​the insulating layer; The coverage area of ​​the bottom metal layer is smaller than the bottom surface area of ​​the insulating layer.

6. The high heat dissipation LED device according to claim 5, characterized in that: One side wall of the insulating layer is connected to one side wall of the boss; The metal substrate, the insulating layer and the bottom metal layer surround and form a gap.

7. The high heat dissipation LED device according to claim 6, characterized in that: The insulating layer is provided with a plurality of first through holes at positions corresponding to the gaps; The diameter of the first through hole is d1, and the value range of d1 is: 50um<d1≤150um.

8. The high heat dissipation LED device according to claim 7, characterized in that: The distance between any two adjacent first through holes is L; The constraint relationship between L and d1 is: 1.5d1≤L.

9. The high heat dissipation LED device according to claim 6, characterized in that: The metal substrate is provided with a groove, and the groove is arranged in the covering area of ​​the bottom metal layer; And the length direction of the groove is consistent with the length direction of the gap.

10. The high heat dissipation LED device according to claim 9, characterized in that: The width of the groove is w1, and the value range of w1 is: 100um<w1≤150um.

11. The high heat dissipation LED device according to claim 9, characterized in that: The depth of the groove is h1, and the value range of h1 is: 50um<h1≤100um.

12. The high heat dissipation LED device according to claim 6, characterized in that: The metal substrate is provided with at least two second through holes, and the two second through holes are symmetrically distributed on two sides of the ceramic substrate.

13. The high heat dissipation LED device according to claim 12, characterized in that: The diameter of the second through hole is d2, and the value range of d2 is: 100um≤d2≤500um.

14. A method for preparing a high heat dissipation LED device, characterized in that: The preparation method is used to prepare the high heat dissipation LED device according to any one of claims 1 to 13, and the preparation method comprises: S11: preparing a metal substrate, and forming a boss and an electrically isolated substrate mounting area on the metal substrate; S12: Solidifying LED chips, performing a solidifying operation on LED chips on the convex platform of the metal substrate; S13: preparing an electrically separated substrate, disposing a top metal layer on the top surface of the insulating layer, disposing a bottom metal layer on the bottom surface of the insulating layer, and forming a circuit layer on the top metal layer by etching or electroplating; S14: mounting the electrical separation substrate, bonding and fixing the electrical separation substrate in the electrical separation substrate mounting area of ​​the metal substrate; S15: Wire bonding, achieving electrical connection between the LED chip and the circuit layer of the electrically separated substrate through wire bonding.

15. The method for preparing a high heat dissipation LED device according to claim 14, characterized in that: The step S11 comprises: A metal substrate frame is manufactured by a stamping die, wherein the metal substrate frame manufactured by the stamping die has a boss and an installation area of ​​the electrical separation substrate formed on the metal substrate; A punching cutter of the punching die forms a groove on the metal substrate frame in a mounting area of ​​the electrical separation substrate.

16. The method for preparing a high heat dissipation LED device according to claim 15, characterized in that: The step S11 further includes: The electrically separated substrate mounting region of the metal substrate is punched by laser punching or drilling equipment, so that the formed second through hole can be tangent to the side wall of the boss.

17. The method for preparing a high heat dissipation LED device according to claim 14, characterized in that: The step S12 comprises: Adhere and fix the LED chip on the boss of the metal substrate by adhesive; Alternatively, the LED chip is solidified on the boss of the metal substrate by eutectic welding.

18. The method for preparing a high heat dissipation LED device according to claim 14, characterized in that: The step S14 comprises: A plurality of first through holes are processed on the insulating layer of the electrical separation substrate by a laser perforation process, and then the electrical separation substrate is mounted on the metal substrate.

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