Substrate processing apparatus

Abstract

A substrate processing apparatus is provided with: a plurality of first mist nozzles provided in a chamber and arranged along an array of a plurality of substrates at preset second intervals; and a plurality of second mist nozzles provided in the chamber and arranged along the array of the plurality of substrates at a second interval. The plurality of first mist nozzles are disposed on the opposite side of the plurality of second mist nozzles across the plurality of substrates in plan view. The first mist nozzle and the second mist nozzle are disposed so as to face the plurality of substrates in plan view. The plurality of first mist nozzles are arranged so as to be offset from the plurality of second mist nozzles by a length of half the second interval in the arrangement direction of the plurality of substrates W. The first mist nozzle and the second mist nozzle respectively spray at least one of mist-like liquid and droplet-like liquid.

Description

Technical Field

[0001] The present invention relates to a substrate processing device for processing a substrate. Examples of the substrate include semiconductor substrates, substrates for FPD (Flat Panel Display), glass substrates for photomasks, substrates for optical disks, substrates for magnetic disks, ceramic substrates, and substrates for solar cells. Examples of FPD include, for example, liquid crystal display devices, organic EL (electroluminescence) display devices, and the like. Background Art

[0002] The conventional substrate processing apparatus includes: a chamber for accommodating the substrate; a processing tank disposed in the chamber; and a holding unit for holding the substrate (for example, see Japanese Patent Publication No. 2023-020268). A waterproofing agent ejection unit, a first solvent ejection unit, and a second solvent ejection unit are disposed in the chamber.

[0003] The waterproofing agent ejection unit ejects vapor of the waterproofing agent. The first solvent ejection unit ejects vapor of isopropyl alcohol (IPA). The second solvent ejection unit ejects a mixed gas containing IPA and nitrogen. The second solvent ejection unit includes a plurality of (e.g., 20) two-fluid nozzles. The plurality of two-fluid nozzles are arranged in two rows. Summary of the invention

[0004] Problems to be solved by the invention

[0005] Compared with supplying solvent vapor, supplying a mist-like solvent (solvent mist) makes it easier for the solvent to adhere to the substrate. However, if only the mist-like solvent is sprayed, the solvent may be wasted. For example, when the main intention is to attach the solvent to multiple substrates in the atmosphere of the mist-like solvent, a large amount of solvent may adhere to parts other than the multiple substrates (for example, the inside of the processing tank and the lifter) and a part of the substrate, and the solvent may be consumed in vain. Therefore, the solvent may not be efficiently applied to the substrate.

[0006] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing apparatus capable of efficiently applying a liquid to a substrate.

[0007] Means for solving problems

[0008] In order to achieve such an object, the present invention adopts the following structure. That is, the substrate processing device of the present invention processes a plurality of substrates, and is characterized by comprising: a chamber that accommodates a plurality of substrates arranged in a vertical posture in a linear shape along a horizontal direction at a predetermined first interval; a substrate holding portion that is disposed in the chamber and holds the plurality of substrates; a plurality of first nozzles that are disposed in the chamber and arranged along the arrangement of the plurality of substrates at a predetermined second interval; and a plurality of second nozzles that are disposed in the chamber and arranged along the arrangement of the plurality of substrates at the second interval, the plurality of first nozzles being arranged on the opposite side of the plurality of second nozzles across the plurality of substrates in a plan view, the plurality of first nozzles and the plurality of second nozzles being arranged in a manner facing the plurality of substrates in a plan view, the plurality of first nozzles being arranged offset by half the length of the second interval relative to the plurality of second nozzles in the arrangement direction of the plurality of substrates, and the plurality of first nozzles and the plurality of second nozzles respectively spraying at least one of a mist-like liquid and a droplet-like liquid.

[0009] According to the substrate processing device of the present invention, at least one liquid in the form of mist and droplets sprayed from the first nozzle and the second nozzle is directly attached to the substrate. As a result, it is easier to attach the liquid to the substrate than in the case where the liquid is attached to the substrate in an atmosphere of mist or other liquid. In addition, if the first nozzle and the second nozzle are opposed to each other, the mist or other liquids collide with each other, thereby there is a possibility that the coating efficiency will deteriorate. Therefore, the plurality of first nozzles are arranged relative to the plurality of second nozzles, staggered by half the length of the second interval in the arrangement direction of the plurality of substrates. As a result, the collision of the mist or other liquids can be suppressed, so that the mist or other liquids can reach a deep place. Therefore, the liquid can be efficiently applied to the substrate. In addition, the consumption of the liquid can be reduced, thereby shortening the spraying time.

[0010] In addition, it is preferable that the substrate processing apparatus further includes a control unit configured to cause the plurality of first nozzles and the plurality of second nozzles to alternately spray at least one of the liquids in a mist form and a liquid drop form.

[0011] When the liquid is sprayed from both sides, the mist-like liquid collides, which sometimes prevents the liquid from adhering. However, since the liquid is sprayed from each side, the collision can be suppressed, thereby enabling the mist-like liquid to reach a deep depth. Therefore, the liquid can be well adhered to the substrate.

[0012] In addition, it is preferable that, in the above-mentioned substrate processing apparatus, when the plurality of first nozzles and the plurality of second nozzles are respectively oriented toward a central axis passing through the center of each substrate, the plurality of first nozzles and the plurality of second nozzles respectively spray at least one of the liquid in a mist form and a droplet form so that the liquid directly reaches the center of the opposing substrate. Thus, the liquid can be attached to both surfaces (the front surface and the back surface) of the substrate in a wide range.

[0013] In addition, preferably, the substrate processing device further comprises: a lifting unit that lifts the substrate holding unit; and a control unit that causes the lifting unit to lift the substrate holding unit when the liquid is ejected from the plurality of first nozzles and the plurality of second nozzles, respectively, so that the plurality of substrates pass between the plurality of first nozzles and the plurality of second nozzles. Thus, the liquid can be directly attached to the substrate evenly.

[0014] In addition, preferably, the substrate processing device further comprises a relative moving part, which moves the substrate holding part relative to the plurality of first nozzles and the plurality of second nozzles in the arrangement direction of the plurality of substrates. Since the substrate holding part can be moved in the arrangement direction of the substrates, the liquid can be directly attached to the substrates more evenly.

[0015] In the above substrate processing apparatus, the liquid is a solvent. Another example of the liquid is a water repellent.

[0016] In addition, preferably, the above-mentioned substrate processing device further comprises: a solvent supply unit, which can respectively transport the solvent to the plurality of first nozzles and the plurality of second nozzles; and a waterproofing agent supply unit, which can respectively transport the waterproofing agent to the plurality of first nozzles and the plurality of second nozzles, and when the waterproofing agent supply unit does not transport the waterproofing agent and the solvent supply unit transports the solvent, the plurality of first nozzles and the plurality of second nozzles respectively spray at least one of the solvent in mist and droplet form, and when the solvent supply unit does not transport the solvent and the waterproofing agent supply unit transports the waterproofing agent, the plurality of first nozzles and the plurality of second nozzles respectively spray at least one of the waterproofing agent in mist and droplet form.

[0017] The solvent and the waterproofing agent can be selectively sprayed from the first nozzle and the second nozzle. In addition, for example, the two solvent nozzle arrays and the two waterproofing agent nozzle arrays are sometimes arranged at different heights. In the process of spraying the solvent, the substrate is passed between the two solvent nozzle arrays. In addition, in the process of spraying the waterproofing agent, when the substrate is passed between the two waterproofing agent nozzle arrays, the distance of the substrate being lifted and lowered sometimes becomes longer. Therefore, the height of the chamber sometimes becomes higher. However, according to the present invention, the height of the chamber can be suppressed.

[0018] In addition, preferably, the substrate processing device further comprises a processing tank, which is disposed in the chamber and can store the processing liquid, and the plurality of first nozzles and the plurality of second nozzles are arranged at a position higher than the processing tank. Even when the processing tank is disposed in the chamber, the liquid can be efficiently applied to the substrate.

[0019] Effects of the Invention

[0020] According to the substrate processing apparatus of the present invention, liquid can be efficiently applied to a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Although several embodiments currently considered to be preferred are shown in the drawings for the purpose of illustrating the invention, it should be understood that the invention is not limited to the structures and measures shown in the drawings.

[0022] Figure 1 This is a longitudinal sectional view showing a schematic structure of a substrate processing apparatus according to Example 1.

[0023] Figure 2 This is a diagram showing the arrangement of two nozzle rows (mist nozzles) and the piping of IPA and a waterproofing agent.

[0024] Figure 3 This is a plan view showing an example of the arrangement of the mist nozzles with respect to 50 substrates.

[0025] Figure 4 It is a graph showing the evaluation results of liquid adhesion when the ejection angle is changed.

[0026] Figure 5 It is a graph showing the evaluation results of liquid adhesion when the ejection angle and the second interval (nozzle interval) are changed.

[0027] Figure 6 It is a diagram for explaining the operation of the substrate processing apparatus according to the first embodiment.

[0028] Figure 7 It is a timing chart showing the operation of the substrate processing apparatus according to the first embodiment.

[0029] Fig. 8A This is a diagram for explaining a case where four mist nozzles are placed opposite to each other. Figure 8B This is a diagram for explaining a case where four mist nozzles are staggered by half a pitch.

[0030] Fig. 9 This is a diagram showing the arrangement of two nozzle rows (mist nozzles) of Example 2 and the piping of IPA and a waterproofing agent.

[0031] Fig.10 It is a top view for explaining the mist nozzle of Example 2 which sprays liquid alternately.

[0032] Fig.11A , Fig. 11B It is a top view for explaining the lifter and two nozzle rows (mist nozzles) of a modified example.

[0033] Fig.12 It is a side view showing a mist nozzle and a holding portion according to a modified example.

[0034] Explanation of symbols

[0035] 1: substrate processing device; 2: processing tank; 2A: opening; 3: chamber; 4: lifter; 4A: holding part; 4B: lifting part; 4C: Y-direction moving part; 17: nozzle array; 23, 24: mist nozzle; 25: solvent supply unit; 26: waterproofing agent supply unit; V1~V7, V11, V12: switch valve; PH1: first interval; PH2: second interval. DETAILED DESCRIPTION

[0036] [Example 1]

[0037] Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings. Figure 1 1 is a longitudinal sectional view showing a schematic structure of a substrate processing apparatus 1 according to the first embodiment. Figure 2 It is a plan view showing the arrangement of two nozzle rows 17 (mist nozzles 23 and 24) and the piping of IPA and a water-repellent agent.

[0038] (1) Structure of substrate processing apparatus

[0039] Reference Figure 1 The substrate processing device 1 performs drying processing on a plurality of (e.g., 50 or 25) substrates W. Each substrate W is formed in, for example, a disk shape. A pattern such as an element is formed on the front surface (front surface or main surface) of each substrate W. In this case, the surface on the opposite side of the front surface of the substrate W is called the back surface.

[0040] The substrate processing apparatus 1 includes a processing tank 2 capable of storing a processing liquid, a chamber 3 for storing the processing tank 2, an elevator 4, and two ejection pipes 5. The processing tank 2 is arranged at the lower part of the chamber 3, and is arranged separately from the bottom surface of the chamber 3. An opening 2A is formed on the upper surface of the processing tank 2. The processing liquid overflowing from the opening 2A is stored at the bottom of the chamber 3. The chamber 3 stores a plurality of substrates W in a vertical posture arranged in a straight line in the horizontal direction at a preset first interval PH1 (for example, 5 mm).

[0041] The lifter 4 lifts and lowers the plurality of substrates W in the chamber 3 while holding the plurality of substrates W. The lifter 4 includes a holding portion 4A that holds the plurality of substrates W in a vertical position, and a lifting portion 4B that lifts and lowers the holding portion 4A in a vertical direction (Z direction). The plurality of substrates W held by the holding portion 4A are arranged at equal intervals in the thickness direction of each substrate W. For example, Figure 1 In the embodiment, the direction in which the plurality of substrates W are arranged is the Y direction. The holding portion 4A is provided in the chamber 3. The holding portion 4A corresponds to the substrate holding portion of the present invention. The lifting portion 4B corresponds to the lifting portion of the present invention.

[0042] The lifting unit 4B includes, for example, an electric motor. For example, the lifting unit 4B can move the plurality of substrates W held by the holding unit 4A to a transfer position H1 above the chamber 3, an upper position H2 above the processing tank 2 in the chamber 3, and a lower position (immersion processing position) H3 in the processing tank 2.

[0043] Two discharge pipes 5 for supplying the processing liquid into the processing tank 2 are provided at the bottom of the processing tank 2. Each discharge pipe 5 is formed linearly in the Y direction where the plurality of substrates W are arranged. Each discharge pipe 5 has a plurality of discharge ports arranged along the Y direction.

[0044] The front end portion of the treatment liquid piping 7 branches into two. Thus, the two front end portions of the treatment liquid piping 7 are connected to the two ejection pipes 5, respectively. The base end portion of the treatment liquid piping 7 is connected to the treatment liquid supply source 9. The treatment liquid supply source 9 delivers, for example, pure water as the treatment liquid to the treatment liquid piping 7. Pure water uses, for example, deionized water (DIW: Deionized Water). A switch valve V1 is provided in the treatment liquid piping 7. The switch valve V1 supplies pure water and stops the supply. For example, when the switch valve V1 is opened, pure water is supplied from the two ejection pipes 5. In addition, when the switch valve V1 is closed, the supply of pure water from the two ejection pipes 5 is stopped.

[0045] In addition, a diluted IPA liquid obtained by diluting an isopropyl alcohol (IPA) liquid with pure water may be used as the treatment liquid. In addition, the two ejection pipes 5 may also be configured to selectively eject pure water and the diluted IPA liquid.

[0046] In addition, the substrate processing apparatus 1 includes a QDR valve (on / off valve) 11 provided at the bottom of the processing tank 2. The QDR valve 11 discharges the pure water in the processing tank 2 to the bottom surface in the chamber 3. When the QDR valve 11 is opened, the pure water in the processing tank 2 is rapidly discharged to the bottom of the chamber 3. When the QDR valve 11 is closed, the pure water can be stored in the processing tank 2.

[0047] The chamber 3 includes an opening 3A through which a plurality of substrates W pass and an upper cover 13 that blocks the opening 3A. The opening 3A is provided at the top of the chamber 3. When the upper cover 13 is opened, a plurality of substrates W can pass through the opening 3A. When the upper cover 13 is closed, the space in the chamber 3 is closed. The upper cover 13 is opened and closed by an electric motor (not shown).

[0048] In addition, the substrate processing device 1 has two inert gas nozzles 15 and two nozzle arrays 17. The two inert gas nozzles 15 and the two nozzle arrays 17 are arranged in the chamber 3. Between the upper cover 13 and the processing tank 2, two inert gas nozzles 15 and two nozzle arrays 17 are arranged in sequence from the top. The two nozzle arrays 17 (mist nozzles 23 and 24 described later) are arranged at a position higher than the processing tank 2, that is, the opening 2A of the processing tank 2. The two nozzle arrays 17 can also be arranged near the outer edge of the opening 2A of the processing tank 2, that is, near the upper end of the side wall of the processing tank 2. The two nozzle arrays 17 can also spray a mist solvent from the outside of the processing tank 2 (or the opening 2A) toward the inside of the processing tank 2 when viewed from above.

[0049] The two inert gas nozzles 15 supply inert gas into the chamber 3. The front end of the supply pipe 19 branches into two. Figure 1 As shown, the two front end portions of the supply pipe 19 are respectively connected to the two inert gas nozzles 15. The base end of the supply pipe 19 is connected to the first inert gas supply source 21. The first inert gas supply source 21 delivers, for example, nitrogen as an inert gas to the supply pipe 19. A switch valve V2 is provided on the supply pipe 19. The switch valve V2 performs the supply and stop of the inert gas.

[0050] Reference Figure 2 . The first nozzle row 17 includes a plurality of (for example, 9) mist nozzles 23 arranged along the Y direction. The second nozzle row 17 includes a plurality of (for example, 9) mist nozzles 24 arranged along the Y direction. The two nozzle rows 17 selectively spray misted solvents and misted waterproofing agents into the chamber 3, respectively. That is, for example, 18 mist nozzles 23, 24 spray misted liquids (solvents or waterproofing agents), respectively. Each mist nozzle 23 uses a nozzle having the same structure as each mist nozzle 24. Each mist nozzle 23, 24 is composed of a two-fluid nozzle. A two-fluid nozzle is a nozzle that mixes a liquid (solvent or waterproofing agent) with an inert gas and sprays a misted liquid. That is, a solvent or a waterproofing agent is sprayed (injected) by a two-fluid nozzle.

[0051] In addition, the mist nozzle 23 is equivalent to the first nozzle of the present invention. In addition, the mist nozzle 24 is equivalent to the second nozzle of the present invention. In addition, the mist nozzle 24 may be the first nozzle of the present invention, and the mist nozzle 23 may be the second nozzle of the present invention.

[0052] like Figure 1As shown, the substrate processing apparatus 1 further includes a solvent supply unit 25, a water-repellent supply unit 26, and an inert gas supply unit 27. The solvent supply unit 25 can deliver a solvent (liquid) to each of the mist nozzles 23 and 24. The water-repellent supply unit 26 can deliver a water-repellent (liquid) to each of the mist nozzles 23 and 24. Figure 1 , Figure 2 As shown, the front end of the common pipe 29 is connected to the mist nozzles 23 and 24 (two nozzle rows 17). For example, when the two nozzle rows 17 have 18 mist nozzles 23 and 24, the front end of the common pipe 29 branches into 18 branches. For example, the 18 front ends are respectively connected to the 18 mist nozzles 23 and 24. In addition, the base end of the common pipe 29 is connected to the confluence pipe 31 (for example, a T-shaped pipe).

[0053] The solvent supply unit 25 includes a solvent piping 33, a switch valve V3, and a heater HT1. The front end of the solvent piping 33 is connected to the confluence pipe 31, and the base end thereof is connected to a solvent supply source 35. The solvent supply source 35 delivers, for example, isopropyl alcohol (IPA) liquid as a solvent (organic solvent) to the solvent piping 33. The solvent is preferably hydrophilic. The switch valve V3 is provided on the solvent piping 33. The switch valve V3 supplies the solvent and stops the supply. The heater HT1 is provided on the solvent piping 33 between the switch valve V3 and the solvent supply source 35. The heater HT1 heats, for example, the solvent passing through the solvent piping 33 from the outside of the solvent piping 33 to a preset temperature.

[0054] The waterproofing agent supply unit 26 includes a waterproofing agent piping 37, a switch valve V4, and a heater HT2. The front end of the waterproofing agent piping 37 is connected to the confluence pipe 31, and the base end thereof is connected to the waterproofing agent supply source 39. The waterproofing agent supply source 39 transports the waterproofing agent (liquid) to the waterproofing agent piping 37. The waterproofing agent modifies the surface of the substrate W to be waterproof. The waterproofing agent uses, for example, a silicon-based waterproofing agent or a metal-based waterproofing agent. The waterproofing agent is also called a silylating agent. The switch valve V4 is provided on the waterproofing agent piping 37. The switch valve V4 supplies the waterproofing agent and stops the supply. The heater HT2 is provided on the waterproofing agent piping 37 between the switch valve V4 and the waterproofing agent supply source 39. The heater HT2 heats the waterproofing agent, for example, passing through the waterproofing agent piping 37 from the outside of the waterproofing agent piping 37 to a preset temperature.

[0055] In addition, the solvent supply unit 25 and the water-repellent agent supply unit 26 may include a pump (not shown). In addition, one of the solvent supply unit 25 and the water-repellent agent supply unit 26 may include a common pipe 29 .

[0056] The inert gas supply unit 27 can deliver inert gas to each mist nozzle 23, 24. The inert gas supply unit 27 includes an inert gas supply pipe 41 and a switch valve V5. The front end of the inert gas supply pipe 41 is connected to the mist nozzles 23, 24 (two nozzle rows 17). For example, when the two nozzle rows 17 include 18 mist nozzles 23, 24, the front end of the inert gas supply pipe 41 branches into 18. For example, the 18 front ends of the inert gas supply pipe 41 are respectively connected to the 18 mist nozzles 23, 24. The base end of the inert gas supply pipe 41 is connected to the second inert gas supply source 43. The second inert gas supply source 43 delivers, for example, nitrogen as an inert gas. A switch valve V5 is provided on the inert gas supply pipe 41. The switch valve V5 supplies the inert gas and stops the supply.

[0057] Figure 3 1 is a top view showing an example of the arrangement of the mist nozzles 23 and 24 with respect to a plurality of (e.g., 50) substrates W. A plurality of (e.g., 9) mist nozzles 23 are arranged along the arrangement of the plurality of (e.g., 50) substrates W at a preset second interval PH2. Similarly, a plurality of (e.g., 9) mist nozzles 24 are arranged along the arrangement of the plurality of (e.g., 50) substrates W at a second interval PH2.

[0058] In addition, the nine mist nozzles 23 are arranged on the opposite side of the nine mist nozzles 24 with 50 substrates W in between when viewed from above. Figure 3 As shown, nine mist nozzles 23 (first nozzle row 17), 50 substrates W, and nine mist nozzles 24 (second nozzle row 17) are sequentially arranged in the X direction. In addition, the nine mist nozzles 23 (first nozzle row) are arranged at the same height position as the nine mist nozzles 24 (second nozzle row 17).

[0059] The 18 mist nozzles 23 and 24 are arranged so as to face the 50 substrates W when viewed from above. That is, the 18 mist nozzles 23 and 24 are arranged so as to face the inside of the processing tank 2, the opening 2A, and the chamber 3 when viewed from above. The 9 mist nozzles 23 face the same direction as each other. Similarly, the 9 mist nozzles 24 face the same direction as each other. In this embodiment, the 9 mist nozzles 23 face the +X direction ( Figure 1 In contrast, the nine mist nozzles 24 are oriented in the -X direction ( Figure 1 left direction).

[0060] The 9 mist nozzles 23 are arranged relative to the 9 mist nozzles 24 in the arrangement direction (Y direction) of the 50 substrates W, and are offset by a length PH3 (= PH2 / 2) of approximately half the second interval PH2. The offset direction can be any direction. The second interval PH2 is wider than the first interval PH1 (for example, 5 mm) of the 50 substrates W. The second interval PH2 is, for example, 30 mm. Therefore, the 9 mist nozzles 23 are arranged relative to the 9 mist nozzles 24 in the Y direction and are offset by 15 mm. That is, Figure 3 As shown, the 18 mist nozzles 23 and 24 are arranged in a zigzag shape.

[0061] The spray angle (injection angle) AG of the 18 mist nozzles 23 and 24 is, for example, 45 degrees. The spray pattern is conical or fan-shaped. The fan-shaped spray pattern is a pattern in which the expansion in the vertical direction (Z direction) is narrower than the expansion in the horizontal direction (Y direction). Figure 1 to Figure 3 In the plan view of , the gaps between the nine mist nozzles 23 and the fifty substrates W and the gaps between the nine mist nozzles 24 and the fifty substrates W are, for example, 26 mm.

[0062] Here, refer to Figure 4 , Figure 5 The evaluation results shown will be described with respect to the ejection angle (injection angle) AG and the second interval PH2.

[0063] Figure 4 AG is a graph showing the evaluation results of liquid adhesion when the ejection angle AG is changed. Figure 4 In the comparison, the three conditions of the ejection angle AG of 45 degrees (degrees), 80 degrees, and 110 degrees were compared. In addition, air was supplied to each mist nozzle 24 (23) at 5L / min (liters / minute) and DIW was supplied at 15mL / min (milliliters / minute) to eject mist-like DIW. In addition, the flow rate condition was Figure 5 , described later Fig. 8A , Figure 8B The same is true in Figure 4 In the case where the ejection angle AG is 110 degrees, the liquid (DIW) does not adhere to the center (central axis CA1) of the substrate W. In addition, when the ejection angle AG is 45 degrees, the liquid can be attached to the center of the opposing substrate W, and Figure 4 The front and back surfaces of the four substrates W are attached to the maximum extent.

[0064] Figure 5 1 is a graph showing the evaluation results of liquid adhesion when the ejection angle AG and the second interval PH2 (nozzle interval) are changed. Figure 5 In the embodiment, the comparison is made under four conditions: the spray angle AG is 45 degrees and 80 degrees, and the second interval PH2 of the two mist nozzles 24 (23) is 20 mm and 30 mm. Figure 5As a result, the second interval PH2 is preferably narrower and the ejection angle AG is also smaller.

[0065] Therefore, when the spray angle AG is 45 degrees, the second interval PH2 is preferably 20 mm or more and 30 mm or less. In addition, when the spray angle AG is 45 degrees, the second interval PH2 is further preferably 25 mm or more and 30 mm or less. This is because if the second interval PH2 is narrower, the number of mist nozzles 23 and 24 increases, thereby increasing the consumption of the sprayed liquid. In addition, if the second interval PH2 is wider than 30 mm, it is difficult for the liquid to adhere to the Figure 5 The center of one or more substrates W between the two mist nozzles 23 and 24 shown. Figure 5 As shown, when the ejection angle AG is 45 degrees and the second interval PH2 is 20 mm and 30 mm, the liquid adheres to the center of one or more substrates W located between the two mist nozzles 23 and 24. When the second interval PH2 is 20 mm, the ejection angle AG is preferably greater than or equal to 45 degrees and less than or equal to 80 degrees.

[0066] In addition, Figure 3 In the embodiment, the spray angle AG is set to 45 degrees and the second interval PH2 is set to 30 mm, thereby providing 18 mist nozzles 23 and 24. In this regard, for example, the spray angle AG may be set to 45 degrees and the second interval PH2 may be set to 25 mm, thereby providing 22 mist nozzles 23 and 24 (11 mist nozzles 23 and 11 mist nozzles 24).

[0067] Return to the description of the substrate processing device 1. The substrate processing device 1 includes a pressure reducing pump 51. An exhaust port 53 is provided on the side wall of the chamber 3. The exhaust port 53 is arranged on the lower side of a protective plate 61 described later. An exhaust pipe 55 is connected to the exhaust port 53. On the exhaust pipe 55, a switch valve V6 and a pressure reducing pump 51 are provided in sequence from the exhaust port 53 side. The pressure reducing pump 51 exhausts the gas in the chamber 3 to reduce the pressure in the chamber 3.

[0068] In addition, a discharge port 57 is provided at the bottom wall of the chamber 3. A discharge pipe 59 is connected to the discharge port 57. A switch valve V7 is provided on the discharge pipe 59. When the switch valve V7 is opened, liquid such as the processing liquid stored at the bottom of the chamber 3 is discharged through the discharge port 57 and the discharge pipe 59. When the switch valve V7 is closed, liquid such as the processing liquid is not discharged from the chamber 3.

[0069] In addition, the chamber 3 is provided with a protective plate 61. The protective plate 61 separates the upper space and the lower space in the chamber 3. It is arranged slightly below the upper edge (or opening 2A) of the processing tank 2. The protective plate 61 is formed in a manner to surround the processing tank 2. There is a gap between the protective plate 61 and the outer wall of the processing tank 2 and between the protective plate 61 and the inner wall of the chamber 3. The processing liquid, gas and mist solvent flow through this gap.

[0070] The substrate processing apparatus 1 includes a control unit 63 and a storage unit (not shown). The control unit 63 controls each structure of the substrate processing apparatus 1. The control unit 63 includes one or more processors such as a central processing unit (CPU). The storage unit includes at least one of a ROM (Read-Only Memory), a RAM (Random-Access Memory) and a hard disk. The storage unit stores computer programs required to control each structure of the substrate processing apparatus 1.

[0071] For example, the control unit 63 controls the lifting unit 4B to lift the holding unit 4A so that 50 substrates W pass between the nine mist nozzles 23 and the nine mist nozzles 24 .

[0072] (2) Operation of Substrate Processing Apparatus 1

[0073] Next, refer to Figure 6 , Figure 7 The operation of the substrate processing apparatus 1 will be described. Figure 6 In the figure, the lifter 4 is omitted. Figure 6 In FIG. 1 , the exhaust operation performed by the pressure reducing pump 51 or the like is represented by the symbol VAC. Figure 7 In the figure, symbol CL indicates a closed state of the switch valve V2, etc., and symbol OP indicates an open state of the switch valve V2, etc. In the following description, a plurality of (eg, 50) substrates W are appropriately referred to as "substrates W".

[0074] [Step S01] Immersion treatment (carrying substrate into chamber)

[0075] Pure water is stored as a processing liquid in the processing tank 2. Pure water is supplied from the discharge pipe 5. The lifter 4 receives a plurality of substrates W from a transport robot (not shown) at the handover position H1 through the holding portion 4A. The lifter 4 lowers the substrate W from the handover position H1 to the lower position H3 in the processing tank 2. That is, the lifter 4 immerses the entire substrate W in the pure water in the processing tank 2. By immersing the substrate W in the pure water, the substrate W is cleaned and prevented from drying. Thereafter, the opening 3A of the chamber 2 is closed by the upper cover 13.

[0076] [Step S02] Exhaust in the chamber

[0077] After that, the on-off valve V2 is opened, and nitrogen gas is supplied from the inert gas nozzle 15 into the chamber 3. In addition, when the substrate W is immersed in the processing liquid, the pressure reducing pump 51 reduces the pressure in the chamber 3. That is, while the pressure reducing pump 51 is operated, the on-off valve V6 is opened, thereby exhausting the gas in the chamber 3 through the exhaust port 53 and the exhaust pipe 55. As a result, the pressure in the chamber 3 is lower than the atmospheric pressure, that is, a reduced pressure state (negative pressure state).

[0078] The decompression pump 51 operates between steps S02 and S08. Similarly, the on-off valve V6 is open between steps S02 and S08. In addition, between steps S02 and S08, the interior of the chamber 3 is in a decompressed state.

[0079] [Step S03] Spraying the first IPA (forming a misty IPA atmosphere)

[0080] After that, the supply of nitrogen from the inert gas nozzle 15 is stopped by closing the switch valve V2. In addition, while the substrate W is immersed in the processing liquid, the chamber 3 is depressurized while the mist of IPA is sprayed from the two nozzle arrays 17 (18 mist nozzles 23, 24). That is, the switch valves V3 and V5 are opened, and the mist of IPA is sprayed from the two nozzle arrays 17 into the chamber 3. As a result, the chamber 3 becomes an atmosphere of mist of IPA. In addition, between steps S03 to S06, the switch valves V3 and V5 are opened.

[0081] In addition, the misty IPA may be contained in the pure water in the processing tank 2. Therefore, it can be said that it is an IPA liquid diluted by the pure water in the processing tank 2. Therefore, in step S04 described later, when the substrate W is taken out from the pure water containing IPA in the processing tank 2, it is possible to promote the replacement of the pure water attached to the substrate W with the IPA liquid.

[0082] [Step S04] Spraying the first IPA (lifting the substrate)

[0083] After that, the chamber 3 is depressurized and the misty IPA is sprayed (solvent spraying state). In this state, the lifter 4 lifts the substrate W from the pure water in the processing tank 2. That is, the lifter 4 raises the substrate W from the lower position H3 to the upper position H2. At this time, the substrate W passes between the two nozzle columns 17. The misty IPA sprayed from the two nozzle columns 17 can be directly attached to the substrate W. Thus, a replacement process is performed to replace the pure water attached to the substrate W with IPA. Furthermore, when the substrate W is exposed to the atmosphere of the misty IPA, the replacement process is performed.

[0084] In addition, in step S04, the pressure-reducing pump 51 may be stopped and the on-off valve V6 may be closed. In this case, the pressure-reduced state is maintained.

[0085] [Step S05] Discharging the first IPA (discharging pure water from the treatment tank)

[0086] After that, the chamber 3 is depressurized and the mist-like IPA is sprayed. In this state, the QDR valve 11 is opened to rapidly discharge pure water from the processing tank 2 to the bottom surface of the chamber 3. After the processing tank 2 is empty, the QDR valve 11 is closed.

[0087] [Step S06] Spraying the first IPA (substrate lifting action)

[0088] Thereafter, while mist IPA is sprayed from the 18 mist nozzles 23 , 24 , respectively, the lifting unit 4B of the lifter 4 lifts the holding unit 4A holding 50 substrates W so that the 50 substrates W pass between the 9 mist nozzles 23 and the 9 mist nozzles 24 .

[0089] In other words, while the 50 substrates W are passed between the two nozzle rows 17 spraying the mist-like IPA, the lifter 4 lowers the 50 substrates W from the upper position H2 to the lower position H3 in the processing tank 2 where the pure water is not stored, and then raises the 50 substrates W from the lower position H3 to the upper position H2. This substrate lifting action is performed once or multiple times (for example, 3 times). In this way, the IPA can be evenly directly attached to the substrate W. In addition, the more substrate lifting actions are performed, the more uneven the attachment of the IPA can be suppressed.

[0090] In addition, when the 18 mist nozzles 23 and 24 are respectively directed toward the central axis CA1 passing through the center of each substrate W, the 18 mist nozzles 23 and 24 respectively spray mist IPA so that the IPA directly reaches the center of the relative substrate W. Thus, when 50 substrates W pass between the two nozzle columns 17 (mist nozzles 23 and 24), the mist IPA sprayed from the mist nozzles 23 and 24 can be directly attached (coated) to the center of each substrate W, rather than the mist IPA floating in the chamber 3 when viewed from above. In addition, IPA can be attached to both surfaces (the front surface and the back surface) of the substrate W over a large area. In addition, in Figure 3 For example, the mist nozzle 23A faces the substrate W1 , and the mist nozzle 24A faces the substrate W2 .

[0091] [Step S07] Spraying waterproofing agent

[0092] After that, the exhaust in the chamber 3 is continued. In addition, by closing the switch valves V3 and V5, the supply of mist IPA from the two nozzle arrays 17 is stopped. After that, by opening the switch valves V4 and V5, a mist waterproofing agent is sprayed from the nozzle array 17 (18 mist nozzles 23 and 24) into the chamber 3. At this time, the lifting part 4B of the lifter 4 lifts and lowers the holding part 4A holding 50 substrates W so that the 50 substrates W pass between the 9 mist nozzles 23 and the 9 mist nozzles 24. That is, the lifter 4 lifts and lowers the substrate W between the upper position H2 and the lower position H3. Thereby, the mist waterproofing agent is uniformly attached to the entire substrate W. The spraying of the mist waterproofing agent replaces the IPA attached to the substrate W with the waterproofing agent. The waterproofing agent modifies the surface of the substrate W to be waterproof. Therefore, the pattern collapse can be well prevented.

[0093] [Step S08] Spraying and drying the second IPA

[0094] After stopping the spraying of the mist-like waterproofing agent, the mist-like solvent is sprayed from the two nozzle columns 17. This action is described in detail. After step S07, the exhaust in the chamber 3 is continued. By closing the switch valves V4 and V5, the spraying of the mist-like waterproofing agent from the two nozzle columns 17 is stopped. In addition, by opening the switch valves V3 and V5, the mist-like IPA is sprayed from the two nozzle columns 17. As a result, the waterproofing agent attached to the substrate W is replaced with IPA. That is, the waterproofing agent attached to the substrate W is rinsed with IPA. In addition, the particles from the waterproofing agent attached to the substrate W are rinsed with IPA. The particles are generated, for example, by direct contact between water and the waterproofing agent.

[0095] Furthermore, when the mist-like IPA is sprayed from the 18 mist nozzles 23 and 24, the lifting unit 4B of the lifter 4 can lift the holding unit 4A holding 50 substrates W so that the 50 substrates W pass between the 9 mist nozzles 23 and the 9 mist nozzles 24. In addition, the lifter 4 can also lift the substrates W between the upper position H2 and the lower position H3.

[0096] Then, the switch valves V3 and V5 are closed to stop the supply of mist IPA from the two nozzle arrays 17. As a result, the IPA attached to the substrate W is volatilized in the reduced pressure chamber 3, and the substrate W is dried. Alternatively, nitrogen gas may be supplied from the inert gas nozzle 15 when the substrate W is dried.

[0097] [Step S09] Supplying nitrogen

[0098] The decompression pump 51 is stopped, and the switch valve V6 is closed. In addition, the switch valve V2 is opened, and nitrogen is supplied from the inert gas nozzle 15. Thus, the pressure in the chamber 3 is gradually restored from the decompression state to the atmospheric pressure. Then, the pure water is discharged from the bottom of the chamber 3 by opening the switch valve V7.

[0099] [Step S10] Unloading the substrate from the chamber

[0100] The opening 3A is opened by opening the upper cover 13. The lifter 4 raises the substrate W held by the holding portion 4A from the upper position H2 to the delivery position H1. The substrate W raised to the delivery position H1 is moved to the next destination by a transport robot (not shown).

[0101] According to the present embodiment, the mist liquid (IPA or water repellent) sprayed from the mist nozzles 23 and 24 is mainly made to adhere directly to the substrate W. Therefore, it is easier to make the liquid adhere to the substrate W than in the case where the liquid is adhered to the substrate W in the atmosphere of the mist liquid. In addition, the mist liquid sprayed from the mist nozzles 23 and 24 has high straightness, so the mist liquid can fly forward to a far distance. When the 9 mist nozzles 23 and the 9 mist nozzles 24 are opposed to each other, the mist liquids collide with each other, and thus, there is a possibility that the coating efficiency will be deteriorated (refer to Fig. 8A ). Therefore, the nine mist nozzles 23 (first nozzle array 17) are arranged to be staggered by half the length of the second interval PH2 (PH2 / 2) in the arrangement direction of the 50 substrates W relative to the nine mist nozzles 24 (second nozzle array 17). This can suppress the collision of the mist liquid and allow the mist liquid to reach the depth (refer to Figure 8B ). Therefore, the liquid can be efficiently applied to the substrate W. In addition, the consumption of the liquid can be reduced, thereby shortening the ejection time.

[0102] In addition, IPA and a waterproofing agent can be selectively sprayed from the mist nozzles 23 and 24. For example, two solvent nozzle arrays and two waterproofing agent nozzle arrays are sometimes arranged at different heights. When the substrate W is passed between the two solvent nozzle arrays during IPA spraying and when the substrate W is passed between the two waterproofing agent nozzle arrays during waterproofing, the lifting distance of the substrate W sometimes becomes longer. Therefore, the height of the chamber 3 sometimes becomes higher. However, according to this embodiment, the height of the chamber 3 can be suppressed.

[0103] [Example 2]

[0104] Next, a second embodiment of the present invention will be described with reference to the drawings. Note that descriptions overlapping with those of the first embodiment will be omitted. Fig. 9 It is a diagram showing the arrangement of two nozzle rows 17 (mist nozzles 23 and 24) and the piping of IPA and a waterproofing agent. Fig.10 This is a diagram for explaining that the mist nozzles 23 and 24 spray liquid alternately.

[0105] In Example 1, mist IPA is sprayed simultaneously from all 18 mist nozzles 23 and 24. In this regard, in Example 2, 9 mist nozzles 23 (first nozzle row) and 9 mist nozzles 24 (second nozzle row) spray mist IPA alternately.

[0106] Reference Fig. 9 . The substrate processing apparatus 1 further includes two switch valves V11 and V12. The switch valve V11 is provided on the common pipe 29 between the branch pipe 29A and the branch pipe 29B. The switch valve V12 is provided on the common pipe 29 between the branch pipe 29A and the branch pipe 29C. The branch pipe 29A (for example, a T-shaped pipe) is a portion divided into 9 mist nozzle 23 sides and 9 mist nozzle 24 sides. The branch pipe 29B is further divided into the most upstream portion of each mist nozzle 23. The branch pipe 29C is further divided into the most upstream portion of each mist nozzle 24.

[0107] The spraying action of this embodiment is described. First, the switch valves V3 to V5, V11, and V12 are closed. For example, in the case of spraying IPA, the two switch valves V11 and V12 are opened alternately in the state where the switch valves V3 and V5 are opened, that is, in the state where the IPA liquid and nitrogen gas can be delivered to the mist nozzles 23 and 24. Specifically, when the switch valve V11 is opened, the switch valve V12 is closed, and when the switch valve V12 is opened, the switch valve V11 is closed. By such an action, Fig.10 As shown, the nine mist nozzles 23 and the nine mist nozzles 24 spray misted IPA alternately.

[0108] The same applies to the case of spraying the water repellent. In the state where the on-off valves V4 and V5 are opened, the two on-off valves V11 and V12 are opened alternately. Thus, the water repellent in mist form is sprayed alternately from the nine mist nozzles 23 and the nine mist nozzles 24 .

[0109] According to this embodiment, when liquid (IPA or waterproofing agent) is sprayed from both sides of the 18 mist nozzles 23 and 24, there is a situation where the flow of mist liquid or gas containing mist liquid collides and hinders the adhesion of the liquid. However, since the liquid is sprayed from one side, the collision can be suppressed, thereby enabling the mist liquid to reach a deep place. Therefore, the liquid can be well adhered to the substrate W.

[0110] The present invention is not limited to the above-described embodiment, and can be implemented in the following modified forms.

[0111] (1) In the above-mentioned embodiments, Figure 3 The two nozzle arrays 17 shown in the figure have mist nozzles 23 and 24. In this regard, the two nozzle arrays 17 may have a plurality of nozzles (spray nozzles) that spray droplets of liquid (IPA or waterproofing agent) instead of the mist nozzles 23 and 24. Figure 3 As shown, the plurality of nozzles are also arranged in a zigzag shape. Each nozzle does not spray a continuous linear solvent, but sprays droplets. The nozzle is also called a single-fluid nozzle. The two nozzle rows 17 only need to be configured to supply at least one of the solvents in the form of mist and droplets.

[0112] (2) In the above-mentioned embodiments, the mist nozzles 23 and 24 are formed of two-fluid nozzles. In this regard, the mist nozzles 23 and 24 may be formed of single-fluid nozzles. A single-fluid nozzle is a nozzle that converts liquid into mist by the pressure of the liquid without using gas.

[0113] (3) In each of the above-mentioned embodiments and modifications, for example, the lifter 4 may further include a Y-direction moving portion 4C that moves the holding portion 4A relative to the mist nozzles 23 and 24 of the two nozzle arrays 17 in the arrangement direction (Y direction) of the 50 substrates W. The Y-direction moving portion 4C includes, for example, an electric motor.

[0114] For example, first, when IPA is sprayed from the mist nozzles 23 and 24, the lifting unit 4B lifts the holding unit 4A holding 50 substrates W so that the 50 substrates W pass between the 9 mist nozzles 23 and the 9 mist nozzles 24 (substrate lifting action). Fig.11A , Fig. 11B As shown, the Y-direction moving part 4C causes the holding part 4A to swing in the Y direction. The amplitude of the swing is arbitrary. Since it can move in the arrangement direction (Y direction) of the substrate W, the IPA can be directly attached to the substrate W more evenly. The same is true when the waterproofing agent is sprayed.

[0115] In this modification, the Y-direction moving part 4C is provided on the lifter 4, but the Y-direction moving part 4C may be provided not on the lifter 4 but as an independent structure. In addition, the Y-direction moving part 4C may move the two nozzle rows 17 (mist nozzles 23, 24) in the Y-direction relative to the holding part 4A holding 50 substrates W. The Y-direction moving part 4C is equivalent to the relative moving part of the present invention.

[0116] (4) In each of the above-mentioned embodiments and modifications, the mist nozzle 23 is oriented in the +X direction, and the mist nozzle 24 is oriented in the -X direction. That is, the mist nozzles 23 and 24 are horizontally opposite to each other. In this regard, the mist nozzle 23 may be oriented in the +X direction and downward (-Z direction), and the mist nozzle 24 may be oriented in the -X direction and downward (-Z direction). That is, the mist nozzles 23 and 24 may also be oriented obliquely downward. Thus, as Fig.12 As shown, in the holding portion 4A, the mist liquid can be directly attached to the surface (for example, region RY) of the substrate W on the back side of the holding member HJ that actually holds the substrate W in a vertical posture.

[0117] (5) In each of the above-mentioned embodiments and modifications, the mist nozzles 23 and 24 selectively spray IPA and a waterproofing agent. In this regard, 18 mist nozzles for IPA and 18 mist nozzles for waterproofing agents may be provided. In addition, the mist nozzles 23 and 24 may not selectively spray IPA and waterproofing agents. For example, the mist nozzles 23 and 24 may spray a solvent, and the other plurality of nozzles may spray waterproofing agent vapor. In addition, the mist nozzles 23 and 24 may spray a waterproofing agent, and the other plurality of nozzles may spray IPA vapor.

[0118] (6) In the above-mentioned embodiments and modifications, the substrate processing apparatus 1 sprays IPA mist (IPA mist) without supplying IPA vapor. In this regard, it is also possible to spray IPA mist while supplying IPA vapor from other nozzles (for example, see Figure 1 The IPA vapor is supplied to the chamber 3 by the IPA vapor. Since the mist is heavy, it will not spread throughout the entire chamber 3. Therefore, the IPA vapor is used to spread the IPA throughout the chamber 3, thereby cleaning the chamber 3.

[0119] (7) In the above-mentioned embodiments and modifications, the liquid is a solvent or a water-repellent. In this regard, the liquid may be, for example, pure water (e.g., DIW) or carbon dioxide water (CO2 water). For example, the mist nozzles 23 and 24 may spray pure water onto 50 substrates W to clean the 50 substrates W.

[0120] (8) In the above-mentioned embodiments and modifications, Figure 1 As shown in FIG. 1 , the substrate processing apparatus 1 includes two heaters HT1 and HT2. In this regard, the substrate processing apparatus 1 may not include the two heaters HT1 and HT2. Figure 2 The common pipe 29 between the junction pipe 31 and the branch pipe 29A shown in the figure is provided with a heater instead of the two heaters HT1 and HT2.

[0121] The present invention may be embodied in other specific forms without departing from the spirit or essence thereof and, accordingly, reference should be made to the appended claims, rather than to the foregoing description, as indicating the scope of the invention.

Claims

1. A substrate processing device for processing a plurality of substrates, characterized in that: have: A chamber for storing a plurality of substrates arranged in a vertical position in a straight line in a horizontal direction at a predetermined first interval; a substrate holding portion, which is disposed in the chamber and holds the plurality of substrates; A plurality of first nozzles are disposed in the chamber and arranged along the arrangement of the plurality of substrates at a predetermined second interval; as well as a plurality of second nozzles disposed in the chamber and arranged along the arrangement of the plurality of substrates at the second intervals; The plurality of first nozzles are arranged on the opposite side of the plurality of second nozzles across the plurality of substrates in a plan view. The plurality of first nozzles and the plurality of second nozzles are arranged so as to face the plurality of substrates in a plan view. The plurality of first nozzles are arranged to be offset from the plurality of second nozzles by half the length of the second interval in the arrangement direction of the plurality of substrates. The plurality of first nozzles and the plurality of second nozzles respectively spray at least one of liquid in a mist form and liquid droplet form.

2. The substrate processing device according to claim 1, characterized in that: It also has a control unit. The control unit causes the plurality of first nozzles and the plurality of second nozzles to alternately spray at least one of liquid in a mist form and liquid droplet form.

3. The substrate processing device according to claim 1, characterized in that: The structure is such that when the multiple first nozzles and the multiple second nozzles are respectively directed toward the central axis passing through the center of each substrate, the multiple first nozzles and the multiple second nozzles respectively spray at least one of the liquids in mist and droplet form so that the liquid directly reaches the center of the opposite substrate.

4. The substrate processing device according to claim 1, characterized in that: Also available: a lifting unit that lifts and lowers the substrate holding unit; and Control Department, When the liquid is ejected from each of the plurality of first nozzles and the plurality of second nozzles, the control unit causes the lifting unit to lift the substrate holding unit so that the plurality of substrates pass between the plurality of first nozzles and the plurality of second nozzles.

5. The substrate processing device according to claim 4, characterized in that: A relative moving portion is further provided, the relative moving portion moving the substrate holding portion relative to the plurality of first nozzles and the plurality of second nozzles in the arrangement direction of the plurality of substrates.

6. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that: The liquid is the solvent.

7. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that: The liquid is a water repellent.

8. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that: Also available: a solvent supply unit capable of supplying solvent to the plurality of first nozzles and the plurality of second nozzles, respectively; and a water repellent supply unit, which can supply the water repellent to the plurality of first nozzles and the plurality of second nozzles respectively; When the water repellent supply unit does not supply the water repellent and the solvent supply unit supplies the solvent, the plurality of first nozzles and the plurality of second nozzles spray at least one of the solvents in the form of mist and droplets, respectively. When the solvent supply unit does not supply the solvent and the water repellent agent supply unit supplies the water repellent agent, the plurality of first nozzles and the plurality of second nozzles respectively spray the water repellent agent in at least one of a mist form and a droplet form.

9. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that: A processing tank is also provided, which is disposed in the chamber and can store the processing liquid. The plurality of first nozzles and the plurality of second nozzles are arranged at a position higher than the processing tank.

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