Nanoscale ultrasonic amplitude generating device and processing equipment

Abstract

The invention discloses a nanoscale ultrasonic amplitude generating device and machining equipment, the nanoscale ultrasonic amplitude generating device comprises a rear mass block, piezoelectric ceramics, a placement table, a front mass block, a first elastic beam and a second elastic beam, and after voltage is applied to the piezoelectric ceramics, micron-sized ultrasonic vibration in the first direction can be generated; the placing table and the rear mass block are connected to the two opposite ends of the piezoelectric ceramic, the first elastic beam and the second elastic beam are symmetrically arranged on the two sides of the placing table in the second direction, and after longitudinal vibration generated by the piezoelectric ceramic is transmitted to the placing table, the vibration of the placing table in the first direction can drive the first elastic beam and the second elastic beam to deform; the placing table can still generate vibration in the first direction, but due to the inhibition effect of the first elastic beam and the second elastic beam, the longitudinal vibration amplitude is reduced, the placing table generates nanoscale ultrasonic vibration, the amplitude generated by the generating device adapts to the size of the micro-nano structure, and the micro-nano structure machining device can be suitable for machining of the micro-nano structure.

Description

Technical Field

[0001] The present invention relates to the field of micro-nano manufacturing, and in particular to a nano-level ultrasonic amplitude generating device and processing equipment. Background Art

[0002] In ultrasonic-assisted precision machining / ultra-precision machining, an ultrasonic vibration generator acts on a tool or a workpiece, and the relative motion trajectory between the tool applying ultrasonic vibration and the workpiece changes, thereby achieving machining of the workpiece. Currently, the ultrasonic amplitude of an ultrasonic vibration generator can only be maintained at the micron level. In micro-nano manufacturing, the structural dimensions to be machined are often at the sub-micron or even nanometer level. The micron-level amplitude generated by existing ultrasonic vibration generators will destroy the micro-nano structure and is no longer applicable to the field of micro-nano manufacturing, affecting machining quality and accuracy. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a nano-ultrasonic amplitude generating device, which can generate nano-level ultrasonic vibration and can be suitable for micro-nano manufacturing.

[0004] The present invention also provides a processing device having the above-mentioned nano-scale ultrasonic amplitude generating device.

[0005] The nanometer-scale ultrasonic amplitude generating device according to the first aspect of the present invention comprises:

[0006] rear mass block;

[0007] A piezoelectric ceramic capable of generating micrometer-level ultrasonic vibration along a first direction after voltage is applied;

[0008] a placement platform, connected to the rear mass block at two opposite ends of the piezoelectric ceramic along the first direction, wherein the first direction is the longitudinal direction of the piezoelectric ceramic;

[0009] A front mass block, comprising a first fixing portion and a second fixing portion, wherein the first fixing portion and the second fixing portion are respectively located at two sides of the placement platform along a second direction, and the second direction is a lateral direction of the piezoelectric ceramic;

[0010] The first elastic beam and the second elastic beam are symmetrically arranged on both sides of the placement platform along the second direction, the two ends of the first elastic beam are respectively connected to the first fixing portion and the placement platform, and the two ends of the second elastic beam are respectively connected to the second fixing portion and the placement platform.

[0011] The nanometer-scale ultrasonic amplitude generating device according to the embodiment of the present invention has at least the following beneficial effects:

[0012] In an embodiment of the present invention, when the longitudinal vibration generated by the piezoelectric ceramic is transmitted to the placement table, the placement table tends to vibrate along the first direction. Since the placement table is connected to the first elastic beam and the second elastic beam, the vibration of the placement table along the first direction will drive the first elastic beam and the second elastic beam to deform, that is, the placement table can still vibrate along the first direction, but due to the inhibitory effect of the first elastic beam and the second elastic beam, the longitudinal vibration amplitude is reduced, and the micron-level vibration generated by the piezoelectric ceramic is reduced, so that the placement table generates nanometer-level ultrasonic vibration, so that the amplitude generated by the generating device is adapted to the size of the micro-nano structure, and can be suitable for the processing of the micro-nano structure.

[0013] According to some embodiments of the present invention, along the second direction, the first elastic beam is provided with a first elastic portion and a second elastic portion connected to each other, the first elastic portion is connected to the placement table, the second elastic portion is connected to the first fixing portion, and the elasticity of the first elastic portion is greater than the elasticity of the second elastic portion;

[0014] Along the second direction, the second elastic beam is provided with a third elastic portion and a fourth elastic portion connected to each other, the third elastic portion is connected to the placement platform, the fourth elastic portion is connected to the second fixing portion, and the elasticity of the third elastic portion is greater than the elasticity of the fourth elastic portion.

[0015] According to some embodiments of the present invention, the first elastic portion is provided with mutually symmetrical first grooves on two opposite sides along the first direction; and the third elastic portion is provided with mutually symmetrical second grooves on two opposite sides along the first direction.

[0016] According to some embodiments of the present invention, a plurality of the first grooves and the second grooves are provided, the plurality of the first grooves gradually decrease in a direction from the first elastic portion toward the second elastic portion, and the plurality of the second grooves gradually decrease in a direction from the third elastic portion toward the fourth elastic portion;

[0017] And / or, a plurality of the first grooves are arranged at intervals along the second direction, and the spacing between adjacent first grooves gradually decreases along the direction from the first elastic portion toward the second elastic portion; a plurality of the second grooves are arranged at intervals along the second direction, and the spacing between adjacent second grooves gradually decreases along the direction from the third elastic portion toward the fourth elastic portion.

[0018] According to some embodiments of the present invention, the first groove and the second groove are arc-shaped.

[0019] According to some embodiments of the present invention, the front mass block also includes a connecting portion, which is located on a side of the placement platform facing away from the piezoelectric ceramic and is spaced apart from the placement platform, and opposite ends of the connecting portion are respectively connected to the first fixing portion and the second fixing portion.

[0020] According to some embodiments of the present invention, the connecting portion is integrally connected to the first fixing portion, and the connecting portion is integrally connected to the second fixing portion.

[0021] According to some embodiments of the present invention, the placement table has a placement area for placing the workpiece to be processed and two vibration isolation grooves extending along a third direction. The two vibration isolation grooves are symmetrically arranged on both sides of the placement area along the second direction, and the first direction, the second direction and the third direction are perpendicular to each other.

[0022] The nanometer-scale ultrasonic amplitude generating device according to the second aspect of the present invention comprises:

[0023] rear mass;

[0024] Piezoelectric ceramics, which are capable of producing ultrasonic vibrations when voltage is applied;

[0025] a placement platform, connected to the rear mass block at two opposite ends of the piezoelectric ceramic along a first direction, wherein the first direction is the longitudinal direction of the piezoelectric ceramic;

[0026] A front mass block, comprising a first fixing portion, a second fixing portion and a connecting portion, wherein the first fixing portion and the second fixing portion are respectively located on two sides of the placement platform along a second direction, wherein the second direction is the lateral direction of the piezoelectric ceramic, and the connecting portion is located on a side of the placement platform facing away from the piezoelectric ceramic, and opposite ends of the connecting portion are respectively connected to the first fixing portion and the second fixing portion;

[0027] The third elastic beam is arranged on a side of the placement platform facing away from the piezoelectric ceramic, and opposite ends of the third elastic beam are respectively connected to the connection portion and the placement platform.

[0028] A processing device according to a second aspect of the present invention comprises:

[0029] The above-mentioned nano-scale ultrasonic amplitude generating device;

[0030] Probe;

[0031] A driving module, the probe is connected to the driving module, and the driving module is used to drive the probe to move along a scribing direction and press the workpiece to be processed, and the scribing direction is perpendicular to the first direction.

[0032] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0034] Figure 1 It is a schematic diagram of an embodiment of a nano-scale ultrasonic amplitude generating device of the present invention;

[0035] Figure 2 is the relationship diagram between ultrasonic amplitude and excitation voltage;

[0036] Figure 3 is a schematic diagram of an elastic beam in one embodiment;

[0037] Figure 4 is a schematic diagram of an elastic beam in another embodiment;

[0038] Figure 5 is a schematic diagram of an elastic beam in another embodiment;

[0039] Figure 6 is a schematic diagram of an elastic beam in another embodiment;

[0040] Figure 7 This is a modal simulation diagram of the nano-ultrasonic amplitude generating device;

[0041] Figure 8 It is a schematic diagram of another embodiment of the nano-scale ultrasonic amplitude generating device of the present invention;

[0042] Fig. 9 A schematic diagram of an embodiment of a processing device of the present invention;

[0043] Fig.10 is a schematic diagram of an embodiment of a probe;

[0044] Fig.11 3D morphology of grooves scratched with and without ultrasonic vibration assistance under different loads;

[0045] Fig.12 This is the relationship diagram between the scratch volume and the scratch load with and without ultrasonic vibration scratching under different loads.

[0046] Reference numerals:

[0047] Workpiece to be processed 10, groove 11; generating device 100, rear mass block 110, front mass block 120, first fixing part 121, second fixing part 122, connecting part 123, placing table 130, placing area 131, vibration isolation groove 132, piezoelectric ceramic 140, first elastic beam 150, first elastic part 151, second elastic part 152, first groove 153, through hole 154, second elastic beam 160, third elastic part 161, fourth elastic part 162, second groove 163, third elastic beam 170; probe 200; driving module 300. DETAILED DESCRIPTION

[0048] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0049] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0050] In the description of the present invention, "several" means more than one, "many" means more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, and "above", "below", "within", etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0051] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0052] In the description of the present invention, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0053] Reference Figure 1In one embodiment of the present invention, a nanometer-scale ultrasonic amplitude generating device 100 (hereinafter referred to as the generating device) is provided. The generating device 100 includes a rear mass block 110, a front mass block 120, a placement table 130 and a piezoelectric ceramic 140. The placement table 130 is used to place a workpiece to be processed and is connected to the piezoelectric ceramic 140. The piezoelectric ceramic 140 can generate micrometer-scale ultrasonic vibrations along a first direction after a voltage is applied. For example, when an alternating voltage is externally connected between the two poles of the piezoelectric ceramic 140, based on the inverse piezoelectric effect, the piezoelectric ceramic 140 converts electrical energy into mechanical energy and generates mechanical vibrations of a corresponding frequency, thereby synchronously driving the workpiece placed on the placement table 130 to vibrate, wherein the first direction is the longitudinal direction of the piezoelectric ceramic 140.

[0054] The rear mass block 110 and the placement platform 130 are respectively connected to the opposite ends of the piezoelectric ceramic 140 along the first direction, that is, one end of the piezoelectric ceramic 140 in the longitudinal direction is fixed to the rear mass block 110, and the longitudinal vibration generated by the piezoelectric ceramic 140 is transmitted to the placement platform 130, driving the placement platform 130 to vibrate synchronously; the front mass block 120 includes a first fixing portion 121 and a second fixing portion 122, and the first fixing portion 121 and the second fixing portion 122 are respectively located on the opposite sides of the placement platform 130 along the second direction, and the second direction is the lateral direction of the piezoelectric ceramic 140, and the first fixing portion 121 and the placement platform 130 are connected to the rear mass block 110. 0 and between the second fixing portion 122 and the placement table 130; the generating device 100 also includes a first elastic beam 150 and a second elastic beam 160, the first elastic beam 150 and the second elastic beam 160 are symmetrically arranged on the two sides opposite to each other along the second direction of the placement table 130, and the two ends of the first elastic beam 150 are respectively connected to the first fixing portion 121 and the placement table 130, and the two ends of the second elastic beam 160 are respectively connected to the second fixing portion 122 and the placement table 130, and the first elastic beam 150 and the second elastic beam 160 are both configured as components that can generate deformation and can automatically recover.

[0055] When the longitudinal vibration generated by the piezoelectric ceramic 140 is transmitted to the placement table 130, the placement table 130 tends to vibrate along the first direction. Since the placement table 130 is connected to the first elastic beam 150 and the second elastic beam 160, the vibration of the placement table 130 along the first direction will drive the first elastic beam 150 and the second elastic beam 160 to deform, that is, the placement table 130 can still vibrate along the first direction, but due to the suppression effect of the first elastic beam 150 and the second elastic beam 160, the longitudinal vibration amplitude is reduced. The micron-level vibration generated by the piezoelectric ceramic 140 is reduced, so that the placement table 130 generates nanometer-level ultrasonic vibration, so that the amplitude generated by the generating device 100 is adapted to the size of the micro-nano structure and can be suitable for the processing of the micro-nano structure.

[0056] It should be noted that the piezoelectric ceramic 140 is connected to the center position of the placement table 130 in the second direction, and the first elastic beam 150 and the second elastic beam 160 are symmetrically arranged on the opposite sides of the placement table 130 in the second direction, that is, the first elastic beam 150 and the second elastic beam 160 are symmetrical with each other along the second direction relative to the center of the placement table 130. When the piezoelectric ceramic 140 transmits the vibration in the first direction to the placement table 130, the first elastic beam 150 and the second elastic beam 160 located on both sides of the placement table 130 synchronously produce the same deformation, that is, the placement table 130 is subjected to the same suppression effect on both sides of the second direction, so that the vibration of the placement table 130 is relatively stable, which is beneficial to improving the processing accuracy of the micro-nano structure.

[0057] In some embodiments, a sinusoidal alternating voltage with a frequency greater than 20 kHz is set to excite the piezoelectric ceramic 140, so that the piezoelectric ceramic 140 generates a first-order longitudinal ultrasonic vibration and transmits it to the placement platform 130. On the one hand, the first-order vibration of the piezoelectric ceramic 140 can make the placement platform 130 output only vibration along the longitudinal direction, which is beneficial to processing the micro-nano structure in a specific direction. On the other hand, the sinusoidal alternating voltage greater than 20 kHz can make the placement platform 130 have a larger vibration frequency, which is beneficial to improving the processing efficiency of the micro-nano structure and reducing the amplitude of the placement platform 130.

[0058] The present invention uses a Doppler vibrometer to characterize the vibration characteristics of the generating device 100. Figure 2 The figure shows the amplitude of the vibration generated by the generating device 100 in this embodiment when different excitation voltages are applied. It can be seen that as the excitation voltage increases, the amplitude of the placement table 130 gradually increases, the amplitude of the placement table 130 shows a linear correlation trend with the excitation voltage, and the amplitude of the generating device 100 is always maintained at the nanometer level.

[0059] It can be understood that in this embodiment, the first elastic beam 150 and the second elastic beam 160 have the ability to deform along the first direction. Since the two ends of the first elastic beam 150 along the second direction are respectively connected to the placement table 130 and the first fixed part 121, and the two ends of the second elastic beam 160 along the second direction are respectively connected to the placement table 130 and the second fixed part 122, when the placement table 130 vibrates back and forth along the first direction, the first elastic beam 150 and the second elastic beam 160 bend back and forth in the positive direction of the first direction or the reverse direction of the first direction.

[0060] In addition, in the present embodiment, the projections of the first elastic beam 150 and the second elastic beam 160 in the projection plane are in the form of long strips, the first direction and the second direction are both parallel to the projection plane, and the length of the first elastic beam 150 along the second direction is greater than the length of the first elastic beam 150 along the first direction, and the length of the second elastic beam 160 along the second direction is greater than the length of the second elastic beam 160 along the first direction, so that the first elastic beam 150 and the second elastic beam 160 have good deformation ability in the first direction, which facilitates the deformation of the first elastic beam 150 and the second elastic beam 160 when the placement table 130 vibrates longitudinally.

[0061] In one embodiment, the length of the first elastic beam 150 or the second elastic beam 160 along the first direction is L1, the length of the first elastic beam 150 or the second elastic beam 160 along the second direction is L2, and the length of the first elastic beam 150 or the second elastic beam 160 along the third direction is L3, wherein the first direction, the second direction, and the third direction are perpendicular to each other; wherein 0.2≤L1 / L2≤0.3, L1 / L2 can be set to 0.2, 0.21, 0.23, 0.24, 0.25, 0.27, 0.28, 0.29, 0.3, etc., 0.3≤L1 / L3≤0.5, L1 / L3 can be set to 0.3, 0.32, 0.35, 0.37, 0.4, 0.45, 0.46, 0.48, 0.5, etc.

[0062] In one embodiment, referring to Figure 3The first elastic beam 150 is provided with a connected first elastic portion 151 and a second elastic portion 152 along the second direction, the first elastic portion 151 is connected to the placing table 130, the second elastic portion 152 is connected to the first fixing portion 121, and the elasticity of the first elastic portion 151 is greater than the elasticity of the second elastic portion 152; similarly, the second elastic beam 160 is provided with a connected third elastic portion 161 and a fourth elastic portion 162, the third elastic portion 161 is connected to the placing table 130, the fourth elastic portion 162 is connected to the second fixing portion 122, and the elasticity of the third elastic portion 161 is greater than the elasticity of the fourth elastic portion 162. Therefore, when the piezoelectric ceramic 140 transmits vibration in the first direction to the placement platform 130, the first elastic part 151 and the second elastic part 152, which are closer to the placement platform 130, can be deformed quickly. On the one hand, it ensures that the first elastic beam 150 and the second elastic beam 160 have a certain flexibility to allow the placement platform 130 to continue to vibrate. On the other hand, it avoids the first elastic beam 150 and the second elastic beam 160 from being damaged during the vibration of the placement platform 130 due to their poor deformation ability. The second elastic part 152, which is farther away from the placement platform 130, can suppress excessive deformation of the first elastic part 151. Similarly, the fourth elastic part 162, which is farther away from the placement platform 130, can suppress excessive deformation of the third elastic part 161, ensuring that the first elastic beam 150 and the second elastic beam 160 reduce the vibration of the placement platform 130, and the connection strength between the second elastic part 152 and the first fixed part 121 and between the fourth elastic part 162 and the second fixed part 122 is high, so that the generating device 100 as a whole has a high structural strength.

[0063] It should be noted that the elasticity of the first elastic portion 151 is greater than the elasticity of the second elastic portion 152, which means that when the first elastic beam 150 is deformed due to external force, the first elastic portion 151 is more easily deformed than the second elastic portion 152; similarly, the elasticity of the third elastic portion 161 is greater than the elasticity of the fourth elastic portion 162, which means that when the second elastic beam 160 is deformed due to external force, the third elastic portion 161 is more easily deformed than the fourth elastic portion 162.

[0064] In one embodiment, the length of the first elastic portion 151 along the second direction is a, the length of the second elastic portion 152 along the second direction is b, 1≤a / b≤1.2, and a / b is not limited to being set to 1, 1.02, 1.05, 1.08, 1.1, 1.12, 1.13, 1.15, 1.18, 1.19, 1.2, etc.; similarly, the length of the third elastic portion 161 along the second direction is c, the length of the fourth elastic portion 162 along the second direction is d, 1≤c / d≤1.2, and c / d is not limited to being set to 1, 1.02, 1.05, 1.08, 1.1, 1.12, 1.13, 1.15, 1.18, 1.19, 1.2, etc.

[0065] As a method of realizing that the elasticity of the first elastic part 151 is greater than the elasticity of the second elastic part 152, the cross-sectional area of ​​the first elastic part 151 perpendicular to the second direction is set to be smaller than the cross-sectional area of ​​the second elastic part 152 perpendicular to the second direction. In this case, the first elastic beam 150 can be set to have a stepped structure, or the cross-sectional area of ​​the first elastic beam 150 perpendicular to the second direction gradually increases along the direction from the first elastic part 151 to the second elastic part 152.

[0066] As another way to realize that the elasticity of the first elastic part 151 is greater than the elasticity of the second elastic part 152 , the material hardness of the second elastic part 152 is set to be greater than the material hardness of the first elastic part 151 .

[0067] As another implementation method for achieving that the elasticity of the first elastic portion 151 is greater than the elasticity of the second elastic portion 152, refer to Figure 4 The first elastic beam 150 is provided with a plurality of first grooves 153 on both sides along the first direction, and the size of the first grooves 153 gradually decreases along the direction from the first elastic portion 151 to the second elastic portion 152, and / or the spacing between adjacent first grooves 153 gradually decreases along the direction from the first elastic portion 151 to the second elastic portion 152.

[0068] As another implementation method for achieving that the elasticity of the first elastic portion 151 is greater than the elasticity of the second elastic portion 152, refer to Figure 5 A through hole 154 penetrating along the third direction is provided inside the first elastic portion 151 . The first direction, the second direction and the third direction are perpendicular to each other. The first elastic portion 151 having the through hole 154 is easier to deform than the second elastic portion 152 .

[0069] As another implementation method for achieving that the elasticity of the first elastic portion 151 is greater than the elasticity of the second elastic portion 152, refer to Figure 6 , only the first elastic part 151 is provided with mutually symmetrical first grooves 153 on both sides along the first direction, that is, the first grooves 153 are mutually symmetrical along the first direction relative to the center of the first elastic part 151 in the first direction, and the first elastic part 151 provided with the first grooves 153 is easier to deform than the second elastic part 152, and the first grooves 153 are located on the side of the first elastic part 151, which is convenient for processing the first elastic beam 150. In addition, since the first grooves 153 are symmetrically arranged on the first elastic part 151, the deformation amount of the first elastic beam 150 when the placement platform 130 vibrates in the positive direction of the first direction or the reverse direction of the first direction remains consistent, avoiding stress concentration of the first elastic beam 150 during the deformation process, and causing the placement platform 130 to produce uniform nanometer-level vibration, which is conducive to improving the processing accuracy of the micro-nano structure.

[0070] It is understandable that the above different ways of achieving the elasticity of the first elastic part 151 being greater than the elasticity of the second elastic part 152 can be combined with each other. In addition, the elasticity of the third elastic part 161 being greater than the elasticity of the fourth elastic part 162 can be achieved in the same way.

[0071] Taking the third elastic part 161 as an example of setting the second groove 163, the third elastic part 161 is provided with mutually symmetrical second grooves 163 on two opposite sides along the first direction. The third elastic part 161 with the second groove 163 is easier to deform than the fourth elastic part 162, and the processing of the second elastic beam 160 is more convenient. Similarly, the deformation amount of the second elastic beam 160 when the placement platform 130 vibrates in the positive direction of the first direction or the reverse direction of the first direction is kept consistent, thereby avoiding stress concentration of the second elastic beam 160 during the deformation process, and causing the placement platform 130 to produce uniform nanometer-level vibration, which is beneficial to improving the processing accuracy of the micro-nano structure.

[0072] It should be noted that the opening of the first groove 153 is arranged along the first direction away from the first elastic part 151, and the opening of the second groove 163 is arranged along the first direction away from the second elastic part 152. On the one hand, it is convenient to process the grooves on the first elastic part 151 and the third elastic part 161, and on the other hand, it makes the first elastic part 151 and the third elastic part 161 more easily deformed when the placement table 130 vibrates longitudinally.

[0073] like Figure 6 As shown, the shapes of the first groove 153 and the second groove 163 are not limited to being set as rectangular grooves, triangular grooves, trapezoidal grooves, etc. Figure 4 In the illustrated embodiment, the first groove 153 and the second groove 163 are arc-shaped, so that when the first elastic beam 150 and the second elastic beam 160 are deformed, different regions of the first groove 153 and the second groove 163 are evenly stressed, thereby avoiding stress concentration.

[0074] Furthermore, the first elastic portion 151 may be provided with a plurality of first grooves 153, and the plurality of first grooves 153 are arranged at intervals along the second direction, and the plurality of first grooves 153 gradually decrease in the direction from the first elastic portion 151 toward the second elastic portion 152, that is, the deformation ability of the first elastic portion 151 gradually increases in the direction toward the second elastic portion 152. When the placement table 130 is driven by the piezoelectric ceramic 140 and has a longitudinal vibration tendency, the portion of the first elastic portion 151 close to the placement table 130 is more likely to deform, allowing the placement table 130 to vibrate longitudinally, and the portion of the first elastic portion 151 away from the placement table 130 and the second elastic portion 152 have relatively poor deformation abilities, which can unify the longitudinal vibration amplitude of the placement table 130 and cause the placement table 130 to produce nanometer-level vibrations. Similarly, the third elastic portion 161 may be provided with a plurality of second grooves 163, and the plurality of second grooves 163 are arranged at intervals along the second direction, and the spacing between adjacent second grooves 163 gradually decreases along the direction from the third elastic portion 161 toward the fourth elastic portion 162; when the placement platform 130 is driven by the piezoelectric ceramic 140 and has a longitudinal vibration tendency, the first elastic portion 151 and the third elastic portion 161 close to the placement platform 130 are deformed synchronously, so that the placement platform 130 can perform nanometer-level vibration more smoothly.

[0075] It should be noted that the first fixing portion 121 and the second fixing portion 122 may be relatively independent. In one embodiment, Figure 1 As shown, the front mass block 120 also includes a connecting portion 123, which is located on the side of the placement platform 130 facing away from the piezoelectric ceramic 140 and is spaced apart from the placement platform 130, and the opposite ends of the connecting portion 123 are respectively connected to the first fixed portion 121 and the second fixed portion 122, that is, the first fixed portion 121, the second fixed portion 122 and the connecting portion 123 in the front mass block 120 form an integral structure, which can improve the structural strength of the front mass block 120, so that the first fixed portion 121 can provide a stable deformation suppression effect to the first elastic beam 150, and the second fixed portion 122 can provide a stable suppression effect to the second elastic beam 160, and the placement platform 130 can reduce the vibration amplitude under the suppression effect of the first elastic beam 150 and the second elastic beam 160, and generate nanometer-level vibration.

[0076] The first fixing part 121 and the connecting part 123, as well as the second fixing part 122 and the connecting part 123 can be connected and fixedly connected by bonding, welding or the like; or, one end of the connecting part 123 is integrally connected to the first fixing part 121, and the other end of the connecting part 123 is integrally connected to the second fixing part 122, so as to further enhance the structural strength of the front mass block 120 and simplify the assembly steps of the front mass block 120.

[0077] In one embodiment, referring to Figure 3The placement table 130 has a placement area 131 for placing the workpiece to be processed and two vibration isolation grooves 132 penetrating along the third direction. The two vibration isolation grooves 132 are symmetrically arranged on both sides of the placement area 131 along the second direction. The vibration isolation grooves 132 can reduce the stiffness of the placement table 130 along the first direction, making it easier for the placement table 130 to vibrate along the first direction. Since the ultrasonic energy generated by the piezoelectric ceramic 140 is constant, the vibration of the placement table 130 along the second and third directions is suppressed, and the side vibration of the placement table 130 along the second and third directions caused by the Poisson effect induced by the placement table 130 is weakened, so that the placement table 130 can perform a first-order longitudinal vibration along the first direction.

[0078] Figure 7 , the modal changes of the generating device 100 in one cycle are shown. It can be seen that the placement table 130 exhibits first-order longitudinal vibration over time.

[0079] Furthermore, in some embodiments, the length of the vibration isolation groove 132 along the first direction is greater than the length of the placement area 131 along the first direction, the length of the vibration isolation groove 132 along the second direction is greater than 1 / 4 of the diameter of the piezoelectric ceramic 140, and the length of the placement area 131 along the second direction is less than 1 / 2 of the diameter of the piezoelectric ceramic 140.

[0080] Reference Figure 8 The present invention also provides a generating device 100 of another embodiment, which includes a rear mass block 110, a front mass block 120, a placement table 130, a piezoelectric ceramic 140 and a third elastic beam 170. The placement table 130 is used to place a workpiece to be processed and is connected to the piezoelectric ceramic 140. The piezoelectric ceramic 140 can generate micron-level ultrasonic vibrations along a first direction after a voltage is applied.

[0081] The rear mass block 110 and the placement platform 130 are respectively connected to the opposite ends of the piezoelectric ceramic 140 along the first direction, and the longitudinal vibration generated by the piezoelectric ceramic 140 is transmitted to the placement platform 130, driving the placement platform 130 to vibrate synchronously; the front mass block 120 includes a first fixing portion 121, a second fixing portion 122 and a connecting portion 123, the first fixing portion 121 and the second fixing portion 122 are respectively located on the opposite sides of the placement platform 130 along the second direction, the second direction is the lateral direction of the piezoelectric ceramic 140, and the first fixing portion 121 and the placement platform 130 are connected to the front mass block 120. 0 and between the second fixing portion 122 and the placing table 130, the connecting portion 123 is located on the side of the placing table 130 facing away from the piezoelectric ceramic 140, the opposite ends of the connecting portion 123 are respectively connected to the first fixing portion 121 and the second fixing portion 122, the third elastic beam 170 is arranged on the side of the placing table 130 facing away from the piezoelectric ceramic 140, the opposite ends of the third elastic beam 170 are respectively connected to the connecting portion 123 and the placing table 130, and the third elastic beam 170 is arranged to be a component that can generate deformation and can automatically recover.

[0082] When the longitudinal vibration generated by the piezoelectric ceramic 140 is transmitted to the placement table 130, the placement table 130 tends to vibrate along the first direction. Since the placement table 130 is connected to the third elastic beam 170, the vibration of the placement table 130 along the first direction will drive the third elastic beam 170 to deform, that is, the placement table 130 can still vibrate along the first direction, but due to the inhibitory effect of the third elastic beam 170, the longitudinal vibration amplitude is reduced. The micron-level vibration generated by the piezoelectric ceramic 140 is reduced, so that the placement table 130 generates nanometer-level ultrasonic vibration, so that the amplitude generated by the generating device 100 is adapted to the size of the micro-nano structure and can be suitable for the processing of the micro-nano structure.

[0083] Reference Fig. 9 and Fig.10 The present invention also provides a processing device, which includes the above-mentioned generating device 100, and the processing device also includes a probe 200 and a driving module 300. The probe 200 is connected to the driving module 300. The driving module 300 is used to drive the probe 200 to move along the scratching direction and to cover the workpiece 10 to be processed in a specific direction. The scratching direction is perpendicular to the first direction. After the workpiece 10 to be processed is placed on the placement table 130, an excitation voltage is applied to the piezoelectric ceramic 140, and the pressure point ceramic drives the placement table 130 to generate nanometer-level longitudinal vibration. Since the needle tip of the probe 200 covers the surface of the workpiece 10 to be processed, and the scratching direction is perpendicular to the vibration direction of the placement table 130, when the driving module 300 drives the probe 200 to move along the scratching direction, the probe 200 scratches the surface of the workpiece 10 to form a groove 11 with a preset trajectory, thereby realizing nanometer-level processing of the workpiece 10 to be processed.

[0084] It should be noted that since the scribing direction is perpendicular to the vibration direction of the placement table 130, the vibration direction of the placement table 130 is the width direction of the groove 11, and therefore, the accuracy of the width direction of the groove 11 can be improved. The driving module 300 is not limited to being set as a multi-axis manipulator or a driving module with multiple freedoms. The driving module 300 can pre-set the driving trajectory of the probe 200. When processing the workpiece 10, the groove 11 formed on the workpiece 10 can present a preset micro-nano structure pattern.

[0085] The probe 200 uses a diamond needle tip, the tip discontinuity curvature radius of the needle tip is 180nm, the workpiece 10 is made of single crystal 4H-SiC material, the probe 200 applies a load force of 4-﹣64μN to the workpiece 10, and processes the groove 11 under the experimental conditions of a scratching speed of 2μm / s, a scratching length of 1μm, a scratching number of 50 times, an ultrasonic frequency of 55kHz, and an ultrasonic amplitude of 10nm (i.e., an excitation voltage of 12V) of the piezoelectric ceramic 140, and then uses an atomic force microscope to perform in-situ characterization of the groove 11 on the workpiece 10. It can be seen that the depth and width of the groove 11 formed by scratching on the workpiece 10 are both at the nanometer level.

[0086] Fig.11 The effect of ultrasonic vibration-assisted scratching on the three-dimensional morphology of groove 11 is shown, where (a1)-(i1) is without ultrasonic vibration, and (a2)-(i2) is with ultrasonic vibration. It can be seen that regardless of the load size, when ultrasonic vibration is added, the volume of groove 11 increases, indicating that ultrasonic vibration helps to increase the material removal rate. Without ultrasonic vibration, ridges appear at the edge of groove 11 between 8-48μN, but after adding ultrasonic vibration, the ridges at the edge of groove 11 disappear, and the edge of groove 11 is very smooth, indicating that the introduction of nano-level vibration helps to improve the quality of the machined surface.

[0087] Fig.12 The effect of ultrasonic vibration on the removal volume of single crystal 4H-SiC material under different loads is shown. Without ultrasonic vibration, when the load is less than or equal to 48μN, the volume of the groove 11 on the SiC surface is very small. 4 nm 3 When the normal load increases to 56 μN, the volume of groove 11 increases to 2.1×10 5 nm 3 , the volume increases by one order of magnitude; further, when the load increases to 64 μN, the volume of groove 11 increases to 3.6×10 5 nm 3 , the linear growth rate is 18.5×10 3 nm 3 / μN. When ultrasonic vibration is introduced into microscopic scratching, the load is less than or equal to 16μN. The volume of the groove 11 on the SiC surface is 5×10 4 nm 3 When the normal load increases to 24 μN, the volume of groove 11 increases to 2.5×10 5 nm 3 , also showing an order of magnitude increase; then, when the normal load continues to increase to 48 μN, the volume of the groove 11 basically increases at a linear growth rate of 32.5×10 3 nm 3 / μN increases until it increases to 1.4×10 6 nm 3 When the normal load further increases to 56 μN, the volume of groove 11 increases sharply to 4.4×10 6 nm 3 , when the load continues to increase to 64μN, the volume of the groove 11 remains basically unchanged. By comparing the material removal behaviors of nano-scratching with and without ultrasonic vibration assistance under different loads, it can be found that without ultrasonic vibration, significant material removal occurs only under a normal load of 56μN, while ultrasonic vibration can reduce the normal load to 24μN to achieve significant material removal. This shows that the addition of ultrasonic vibration helps to increase the material removal volume and improve the processing efficiency of the nano-groove 11.

[0088] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present invention. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

Claims

1. A nanometer-scale ultrasonic amplitude generating device, characterized in that: include: rear mass block; A piezoelectric ceramic capable of generating micrometer-level ultrasonic vibration along a first direction after voltage is applied; a placement platform, connected to the rear mass block at two opposite ends of the piezoelectric ceramic along the first direction, wherein the first direction is the longitudinal direction of the piezoelectric ceramic; A front mass block, comprising a first fixing portion and a second fixing portion, wherein the first fixing portion and the second fixing portion are respectively located at two sides of the placement platform along a second direction, and the second direction is a lateral direction of the piezoelectric ceramic; The first elastic beam and the second elastic beam are symmetrically arranged on both sides of the placement platform along the second direction, the two ends of the first elastic beam are respectively connected to the first fixing portion and the placement platform, and the two ends of the second elastic beam are respectively connected to the second fixing portion and the placement platform.

2. The nano-scale ultrasonic amplitude generating device according to claim 1, characterized in that: Along the second direction, the first elastic beam is provided with a first elastic portion and a second elastic portion connected to each other, the first elastic portion is connected to the placement platform, the second elastic portion is connected to the first fixing portion, and the elasticity of the first elastic portion is greater than the elasticity of the second elastic portion; Along the second direction, the second elastic beam is provided with a third elastic portion and a fourth elastic portion connected to each other, the third elastic portion is connected to the placement platform, the fourth elastic portion is connected to the second fixing portion, and the elasticity of the third elastic portion is greater than the elasticity of the fourth elastic portion.

3. The nano-scale ultrasonic amplitude generating device according to claim 2, characterized in that: The first elastic portion is provided with mutually symmetrical first grooves on two opposite sides along the first direction; and the third elastic portion is provided with mutually symmetrical second grooves on two opposite sides along the first direction.

4. The nano-scale ultrasonic amplitude generating device according to claim 3, characterized in that: There are a plurality of the first grooves and the second grooves, the first grooves gradually decrease in size along the direction from the first elastic part to the second elastic part, and the second grooves gradually decrease in size along the direction from the third elastic part to the fourth elastic part; And / or, a plurality of the first grooves are arranged at intervals along the second direction, and the spacing between adjacent first grooves gradually decreases along the direction from the first elastic portion toward the second elastic portion; a plurality of the second grooves are arranged at intervals along the second direction, and the spacing between adjacent second grooves gradually decreases along the direction from the third elastic portion toward the fourth elastic portion.

5. The nano-scale ultrasonic amplitude generating device according to claim 3, characterized in that: The first groove and the second groove are arc-shaped.

6. The nano-scale ultrasonic amplitude generating device according to any one of claims 1 to 5, characterized in that: The front mass block further includes a connecting portion, which is located on a side of the placement platform facing away from the piezoelectric ceramic and spaced apart from the placement platform, and opposite ends of the connecting portion are respectively connected to the first fixing portion and the second fixing portion.

7. The nano-scale ultrasonic amplitude generating device according to claim 6, characterized in that: The connecting portion is integrally connected to the first fixing portion, and the connecting portion is integrally connected to the second fixing portion.

8. The nano-scale ultrasonic amplitude generating device according to any one of claims 1 to 5, characterized in that: The placement table has a placement area for placing the workpiece to be processed and two vibration isolation grooves extending along a third direction. The two vibration isolation grooves are symmetrically arranged on both sides of the placement area along the second direction. The first direction, the second direction and the third direction are perpendicular to each other.

9. A nanometer-scale ultrasonic amplitude generating device, characterized in that: include: rear mass block; Piezoelectric ceramics, which are capable of producing ultrasonic vibrations when voltage is applied; a placement platform, connected to the rear mass block at two opposite ends of the piezoelectric ceramic along a first direction, wherein the first direction is the longitudinal direction of the piezoelectric ceramic; A front mass block, comprising a first fixing portion, a second fixing portion and a connecting portion, wherein the first fixing portion and the second fixing portion are respectively located on two sides of the placement platform along a second direction, wherein the second direction is the lateral direction of the piezoelectric ceramic, and the connecting portion is located on a side of the placement platform facing away from the piezoelectric ceramic, and opposite ends of the connecting portion are respectively connected to the first fixing portion and the second fixing portion; The third elastic beam is arranged on a side of the placement platform facing away from the piezoelectric ceramic, and opposite ends of the third elastic beam are respectively connected to the connection portion and the placement platform.

10. Processing equipment, characterized in that, include: The nanoscale ultrasonic amplitude generating device according to any one of claims 1 to 9; Probe; A driving module, the probe is connected to the driving module, and the driving module is used to drive the probe to move along a scribing direction and press the workpiece to be processed, and the scribing direction is perpendicular to the first direction.

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