Polishing treatment method for LCD target material

Abstract

The invention provides a polishing treatment method for an LCD target material. The polishing treatment method comprises the following steps: providing a target material to be treated; the surface of the to-be-treated target material is rotationally polished through first abrasive paper, and a polished surface is obtained; second abrasive paper is used for conducting grain straightening on the polished surface; the mesh number of the first abrasive paper is smaller than that of the second abrasive paper. The uniformity of the outer surface of the target material is guaranteed, meanwhile, manual operation is reduced, and the production efficiency is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of target material manufacturing and processing, and relates to a polishing treatment method for an LCD target material. Background Art

[0002] LCD (Liquid Crystal Display) display technology has been widely used in integrated circuits, flat panel displays, solar cells, recording media, smart glass and other fields. After a long period of development, the product quality of LCD has been continuously improved, and the requirements for LCD targets have also increased. In the production of LCD, accelerated particles are usually used to bombard the surface of the target material, so that the target atoms are deposited on the surface of the target material substrate, thereby forming a deposited film. Therefore, the quality of the target material used is very important for the coating pass rate.

[0003] At present, in order to remove foreign matter and non-target material on the outer surface of the target, manual sandpaper polishing is generally used directly. The processing time is 10 hours, which wastes labor and has low efficiency. In addition, manual sandpaper polishing is difficult to remove and the roughness is unstable, resulting in poor product consistency. In addition, the manual polishing process generates a lot of dust, which seriously affects the working environment.

[0004] Therefore, how to completely remove foreign matter on the target surface during the processing while reducing labor consumption is a problem that current technicians need to solve. Summary of the invention

[0005] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a polishing method for LCD target materials, which polishes the surface of the LCD target material twice, effectively removes foreign matter and oxides on the surface of the target material, keeps the surface neat and consistent, improves the quality of the target material, reduces manual operation time, and greatly improves production efficiency.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] The present invention provides a polishing method for an LCD target material, the polishing method comprising:

[0008] Providing a target material to be processed;

[0009] Using a first sandpaper to rotationally polish the surface of the target material to be processed to obtain a polished surface;

[0010] Use the second sandpaper to straighten the texture of the polished surface;

[0011] The mesh number of the first sandpaper is smaller than the mesh number of the second sandpaper.

[0012] The present invention first uses a first sandpaper to remove foreign matter or protrusions on the surface of the target material to be processed, and then uses a second sandpaper to remove oxides on the surface of the target material, so that the surface of the target material is flat and smooth with stable roughness, effectively controlling the consistency of the target material quality, reducing manual operations, shortening working time, and improving the fluidity of the product.

[0013] The target material to be processed in the present invention has a bottom surface, a sputtering surface and a side surface, wherein the sputtering surface and the bottom surface are arranged opposite to each other, and the side surface connects the sputtering surface and the bottom surface; the bottom surface is fixed on the operating table, and the sputtering surface is a side surface used for sputtering coating, and the materials of the bottom surface, the sputtering surface and the side surface of the target material can be the same or different, and the present invention does not make any special limitation on this.

[0014] As a preferred technical solution of the present invention, the surface of the target material to be processed is a side surface and / or a sputtering surface.

[0015] As a preferred technical solution of the present invention, the material of the side surface and the sputtering surface independently includes any one of copper, aluminum, molybdenum, tantalum or titanium, or a combination of at least two of them.

[0016] Preferably, the material of the side surface is aluminum, and the material of the sputtering surface is molybdenum.

[0017] As a preferred technical solution of the present invention, the mesh number of the first sandpaper is 100-150 meshes, for example, it can be 100 mesh, 105 mesh, 110 mesh, 115 mesh, 120 mesh, 125 mesh, 130 mesh, 135 mesh, 140 mesh, 145 mesh or 150 mesh, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0018] Preferably, the mesh number of the second sandpaper is 180-350 meshes, for example, it can be 180 mesh, 190 mesh, 200 mesh, 220 mesh, 230 mesh, 240 mesh, 250 mesh, 260 mesh, 280 mesh, 300 mesh, 320 mesh, 330 mesh or 350 mesh, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0019] As a preferred technical solution of the present invention, the rotary polishing includes: attaching the first sandpaper to the grinding disc of the pneumatic polisher to polish the surface of the target material to be processed.

[0020] Preferably, the rotation speed of the rotary polishing is 8000-11000 rpm, for example, it can be 8000 rpm, 8500 rpm, 8800 rpm, 9000 rpm, 9300 rpm, 9500 rpm, 10000 rpm or 11000 rpm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0021] Preferably, the pressure between the first sandpaper and the target material to be processed is 0.3-0.5 MPa, for example, it can be 0.3 MPa, 0.32 MPa, 0.35 MPa, 0.4 MPa, 0.45 MPa, 0.48 MPa or 0.5 MPa, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0022] Preferably, after the rotary polishing, the roughness of the surface of the target material to be processed is ≤0.6 μm.

[0023] As a preferred technical solution of the present invention, when the texture of the side surface is straightened, the second sandpaper is attached to the grinding head of the robot arm to grind the target material to be processed.

[0024] As a preferred technical solution of the present invention, the mesh number of the second sandpaper is 180-280 meshes, for example, it can be 180 mesh, 190 mesh, 200 mesh, 210 mesh, 220 mesh, 230 mesh, 240 mesh, 250 mesh, 260 mesh or 280 mesh, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0025] Preferably, the time for straightening the lines is 0.8 to 3 hours, for example, 0.8 hours, 1 hour, 1.2 hours, 1.5 hours, 2 hours, 2.2 hours, 2.5 hours, 2.8 hours or 3 hours, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0026] Preferably, the pressure between the second sandpaper and the side surface is 0.8-1 kg, for example, 0.8 kg, 0.83 kg, 0.85 kg, 0.9 kg, 0.92 kg, 0.95 kg, 0.98 kg or 1 kg, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0027] Preferably, after the texture is straightened, the roughness of the side surface is 2 to 4 μm, for example, it can be 2 μm, 2.3 μm, 2.5 μm, 2.8 μm, 3 μm, 3.2 μm, 3.5 μm, 3.6 μm, 3.8 μm or 4 μm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0028] As a preferred technical solution of the present invention, when straightening the texture of the sputtering surface, the second sandpaper is attached to a flat sanding machine to grind the target material to be processed.

[0029] As a preferred technical solution of the present invention, the mesh number of the second sandpaper is 280-350 meshes, for example, it can be 280 mesh, 290 mesh, 300 mesh, 310 mesh, 320 mesh, 330 mesh, 340 mesh or 350 mesh, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0030] Preferably, the time for straightening the lines is 3 to 6.5 h, for example, 3 h, 3.2 h, 3.5 h, 3.8 h, 4 h, 4.5 h, 4.6 h, 4.8 h, 5 h, 5.2 h, 5.5 h, 6 h, 6.3 h or 6.5 h, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0031] Preferably, after the texture is straightened, the roughness of the sputtering surface is 0.7 to 0.9 μm, for example, it can be 0.7 μm, 0.73 μm, 0.75 μm, 0.78 μm, 0.8 μm, 0.82 μm, 0.85 μm, 0.86 μm, 0.88 μm or 0.9 μm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0032] As a preferred technical solution of the present invention, the abrasives of the first sandpaper and the second sandpaper independently include any one of aluminum oxide, brown corundum, ceramic corundum, zirconium corundum particles or silicon carbide, or a combination of at least two of them.

[0033] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0034] Compared with the prior art, the present invention has the following beneficial effects:

[0035] The present invention provides a polishing method for an LCD target material, which effectively removes foreign matter and oxides on the surface of the LCD target material, improves the target material quality, stabilizes the roughness, effectively controls the consistency of the target material quality, and achieves a product yield of more than 98%. It also reduces manual operations, shortens working time, and improves product fluidity. DETAILED DESCRIPTION

[0036] It should be understood that the terms "first", "second", etc. are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly indicate the number of technical features indicated. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0037] The technical solution of the present invention is further illustrated below through specific implementation methods.

[0038] In a specific embodiment, the present invention provides a polishing method for an LCD target material, the polishing method comprising:

[0039] A target material to be processed is provided, wherein the target material to be processed has a bottom surface and a sputtering surface relative to each other, and a side surface connecting the bottom surface and the sputtering surface, wherein the material of the side surface and the sputtering surface independently includes any one of copper, aluminum, molybdenum, tantalum or titanium or a combination of at least two thereof.

[0040] When polishing the side surface of the target to be processed, first attach the first sandpaper to the grinding disc of the pneumatic polisher, grind the side surface of the target to be processed for rotary polishing to obtain a polished surface, the mesh number of the first sandpaper is 100-150 meshes, the rotation speed of the rotary polishing is 8000-11000rpm, the pressure between the first sandpaper and the side surface of the target to be processed is 0.3-0.5Mpa, and after the rotary polishing, the roughness of the surface of the target to be processed is ≤0.6μm. Then attach the second sandpaper to the grinding head of the mechanical arm, grind the polished surface of the side surface of the target to be processed to straighten the grain, the mesh number of the second sandpaper is 180-280 meshes, the grain straightening time is 0.8-3h, and the pressure between the second sandpaper and the side surface is 0.8-1kg. After the grain straightening, the roughness of the side surface is 2-4μm.

[0041] When the sputtering surface of the target to be processed is polished, the first sandpaper is first attached to the grinding disc of the pneumatic polisher, and the sputtering surface of the target to be processed is polished by rotation polishing to obtain a polished surface. The mesh number of the first sandpaper is 100-150 meshes, and the rotation speed of the rotation polishing is 8000-11000rpm. The pressure between the first sandpaper and the sputtering surface of the target to be processed is 0.3-0.5Mpa. After the rotation polishing, the roughness of the surface of the target to be processed is ≤0.6μm. Then the second sandpaper is attached to the flat sanding machine, and the polished surface of the sputtering surface of the target to be processed is polished to straighten the grain. The mesh number of the second sandpaper is 280-350 meshes, and the grain straightening time is 3-6.5h. After the grain straightening, the roughness of the sputtering surface is 0.7-0.9μm.

[0042] The abrasives of the first sandpaper and the second sandpaper used independently include any one of aluminum oxide, brown corundum, ceramic corundum, zirconium corundum particles or silicon carbide, or a combination of at least two of them.

[0043] Example 1

[0044] This embodiment provides a polishing method for an LCD target material, which is used to polish the side surface of the LCD target material, and specifically includes the following steps:

[0045] (1) providing a target material to be processed, wherein the target material to be processed has a bottom surface and a sputtering surface opposite to each other, and a side surface connecting the bottom surface and the sputtering surface, wherein the material of the side surface is aluminum;

[0046] (2) attaching a first sandpaper to a grinding disc of a pneumatic polisher, grinding the side surface of the target material to be processed by rotary polishing to obtain a polished surface, wherein the mesh number of the first sandpaper is 120 meshes, the rotation speed of the rotary polishing is 10000 rpm, the pressure between the first sandpaper and the side surface of the target material to be processed is 0.4 MPa, and the abrasive of the first sandpaper used is brown corundum. After rotary polishing, the roughness of the side surface of the target material to be processed is ≤0.6 μm;

[0047] (3) The second sandpaper is attached to the grinding head of the robot arm, and the polished surface of the target material to be processed is ground to straighten the grain. The mesh number of the second sandpaper is 180 meshes, the grain straightening time is 1 hour, the pressure between the second sandpaper and the side surface is 0.9 kg, and the abrasive of the second sandpaper used is brown corundum.

[0048] Example 2

[0049] This embodiment provides a polishing method for an LCD target material, which is used to polish a sputtering surface of an LCD target material, and specifically comprises the following steps:

[0050] (1) providing a target material to be processed, wherein the target material to be processed has a bottom surface and a sputtering surface opposite to each other, and a side surface connecting the bottom surface and the sputtering surface, wherein the sputtering surface is made of molybdenum;

[0051] (2) attaching a first sandpaper to a grinding disc of a pneumatic polisher, grinding the sputtering surface of the target material to be processed by rotary polishing to obtain a polished surface, wherein the mesh number of the first sandpaper is 120 meshes, the rotation speed of the rotary polishing is 10000 rpm, the pressure between the first sandpaper and the sputtering surface of the target material to be processed is 0.35 MPa, and the abrasive of the first sandpaper used is brown corundum. After rotary polishing, the roughness of the sputtering surface of the target material to be processed is ≤0.6 μm;

[0052] (3) The second sandpaper is attached to the flat sander to grind the polished surface of the target material to be processed to straighten the grain. The mesh number of the second sandpaper is 320 meshes, the grain straightening time is 6 hours, and the abrasive of the second sandpaper used is brown corundum.

[0053] Example 3

[0054] This embodiment provides a polishing method for an LCD target material, which is used to polish the side surface and the sputtering surface of the LCD target material, and specifically includes the following steps:

[0055] (1) providing a target material to be processed, wherein the target material to be processed has a bottom surface and a sputtering surface opposite to each other, and a side surface connecting the bottom surface and the sputtering surface, wherein the material of the side surface is aluminum, and the material of the sputtering surface is molybdenum;

[0056] (2) attaching the first sandpaper to the grinding disc of the pneumatic polisher, grinding the side surface and the sputtering surface of the target material to be processed respectively, and performing rotary polishing to obtain polished surfaces, the mesh number of the first sandpaper is 120 meshes, the rotation speed of the rotary polishing is 10000 rpm, the pressure between the first sandpaper and the target material to be processed is 0.45 MPa, and the abrasive of the first sandpaper used is ceramic corundum. After rotary polishing, the roughness of the surface of the target material to be processed (including the side surface and the sputtering surface) is ≤0.6 μm;

[0057] (3) attaching the second sandpaper to the grinding head of the robot arm, grinding the polished surface of the side surface of the target material to be processed to straighten the grain, the mesh number of the second sandpaper is 320 mesh, the grain straightening time is 1 hour, the pressure between the second sandpaper and the side surface is 0.8 kg, the abrasive of the second sandpaper used is ceramic corundum, and the polishing of the side surface of the target material is completed;

[0058] (4) Attach the second sandpaper to the flat sander, and grind the polished surface of the sputtering surface of the target material to be processed to straighten the grain. The mesh number of the second sandpaper is 320, and the grain straightening time is 6 hours. The abrasive of the second sandpaper used is ceramic corundum, and the sputtering surface is polished.

[0059] Example 4

[0060] This embodiment provides a polishing method for an LCD target material, which is used to polish the side surface of the LCD target material, and specifically includes the following steps:

[0061] (1) providing a target material to be processed, wherein the target material to be processed has a bottom surface and a sputtering surface opposite to each other, and a side surface connecting the bottom surface and the sputtering surface, wherein the material of the side surface is aluminum;

[0062] (2) attaching a first sandpaper to a grinding disc of a pneumatic polisher, grinding the side surface of the target material to be processed by rotary polishing to obtain a polished surface, wherein the mesh number of the first sandpaper is 150 meshes, the rotation speed of the rotary polishing is 9000 rpm, the pressure between the first sandpaper and the side surface of the target material to be processed is 0.3 MPa, and the abrasive of the first sandpaper used is brown corundum. After rotary polishing, the roughness of the surface of the target material to be processed is ≤0.6 μm;

[0063] (3) The second sandpaper is attached to the grinding head of the robot arm, and the polished surface of the target material to be processed is ground to straighten the grain. The mesh number of the second sandpaper is 250 mesh, the grain straightening time is 1.2 hours, the pressure between the second sandpaper and the side surface is 0.95 kg, and the abrasive of the second sandpaper used is brown corundum.

[0064] Example 5

[0065] This embodiment provides a polishing method for an LCD target material, which is used to polish the side surface of the LCD target material, and specifically includes the following steps:

[0066] (1) providing a target material to be processed, wherein the target material to be processed has a bottom surface and a sputtering surface opposite to each other, and a side surface connecting the bottom surface and the sputtering surface, wherein the material of the side surface is aluminum;

[0067] (2) attaching a first sandpaper to a grinding disc of a pneumatic polisher, grinding the side surface of the target material to be processed by rotary polishing to obtain a polished surface, wherein the mesh number of the first sandpaper is 110 meshes, the rotation speed of the rotary polishing is 10000 rpm, the pressure between the first sandpaper and the side surface of the target material to be processed is 0.5 MPa, and the abrasive of the first sandpaper used is brown corundum. After rotary polishing, the roughness of the side surface of the target material to be processed is ≤0.6 μm;

[0068] (3) The second sandpaper is attached to the grinding head of the robot arm, and the polished surface of the target material to be processed is ground to straighten the grain. The mesh number of the second sandpaper is 200 meshes, the grain straightening time is 1 hour, the pressure between the second sandpaper and the side surface is 1 kg, and the abrasive of the second sandpaper used is brown corundum.

[0069] Example 6

[0070] This embodiment provides a polishing method for an LCD target material, which is used to polish a sputtering surface of an LCD target material, and specifically comprises the following steps:

[0071] (1) providing a target material to be processed, wherein the target material to be processed has a bottom surface and a sputtering surface opposite to each other, and a side surface connecting the bottom surface and the sputtering surface, wherein the sputtering surface is made of molybdenum;

[0072] (2) attaching a first sandpaper to a grinding disc of a pneumatic polisher, grinding the sputtering surface of the target material to be processed by rotary polishing to obtain a polished surface, wherein the mesh number of the first sandpaper is 150 meshes, the rotation speed of the rotary polishing is 9000 rpm, the pressure between the first sandpaper and the sputtering surface of the target material to be processed is 0.5 MPa, and the abrasive of the first sandpaper used is silicon carbide. After rotary polishing, the roughness of the sputtering surface of the target material to be processed is ≤0.6 μm;

[0073] (3) The second sandpaper is attached to the flat sander to grind the polished surface of the target material to be processed to straighten the grain. The mesh number of the second sandpaper is 330 meshes. The grain straightening time is 5.5 hours. The abrasive of the second sandpaper used is silicon carbide.

[0074] Example 7

[0075] This embodiment provides a polishing method for an LCD target material, which is used to polish a sputtering surface of an LCD target material, and specifically comprises the following steps:

[0076] (1) providing a target material to be processed, wherein the target material to be processed has a bottom surface and a sputtering surface opposite to each other, and a side surface connecting the bottom surface and the sputtering surface, wherein the sputtering surface is made of molybdenum;

[0077] (2) attaching a first sandpaper to a grinding disc of a pneumatic polisher, grinding the sputtering surface of the target material to be processed by rotary polishing to obtain a polished surface, wherein the mesh number of the first sandpaper is 110 meshes, the rotation speed of the rotary polishing is 10000 rpm, the pressure between the first sandpaper and the sputtering surface of the target material to be processed is 0.4 MPa, and the abrasive of the first sandpaper used is brown corundum. After rotary polishing, the roughness of the surface of the target material to be processed is ≤0.6 μm;

[0078] (3) The second sandpaper is attached to the flat sander to grind the polished surface of the target material to be processed to straighten the grain. The mesh number of the second sandpaper is 350 meshes, the grain straightening time is 5.5 hours, and the abrasive of the second sandpaper used is brown corundum.

[0079] Comparative Example 1

[0080] This comparative example provides a polishing method for an LCD target material, which is used to polish the side surface of the LCD target material. The difference from Example 1 is that the mesh size of the second sandpaper used in step (3) is 120 mesh, and the remaining method steps are the same as Example 1.

[0081] Comparative Example 2

[0082] This comparative example provides a polishing method for an LCD target material, which is used to polish the side surface of the LCD target material. The difference from Example 1 is that the mesh size of the first sandpaper used in step (2) is 180 mesh, and the remaining method steps are the same as Example 1.

[0083] Comparative Example 3

[0084] This comparative example provides a polishing method for an LCD target material, which is used to polish the sputtering surface of the LCD target material. The difference from Example 2 is that the mesh size of the second sandpaper used in step (3) is 120 mesh, and the remaining method steps are the same as Example 2.

[0085] Comparative Example 4

[0086] This comparative example provides a polishing method for an LCD target material, which is used to polish the sputtering surface of the LCD target material. The difference from Example 2 is that the mesh size of the first sandpaper used in step (2) is 320 mesh, and the remaining method steps are the same as Example 2.

[0087] The present invention detects the roughness of the LCD target surface (side surface or sputtering surface) after polishing in Examples 1 to 7 and Comparative Examples 1 to 4, records the processing time of a single target, and calculates the target yield. The results are shown in Table 1.

[0088] Table 1

[0089] serial number Side surface roughness Sputtering surface roughness Processing time Yield Example 1 2μm \ 1.2h 99％ Example 2 \ 0.8μm 6.5h 99.3％ Example 3 3μm 0.7μm 7.7h 98.9％ Example 4 3μm \ 1.5h 98.7％ Example 5 2.5μm \ 1.2h 97.9％ Example 6 \ 0.9μm 6.2h 98.3％ Example 7 \ 0.9μm 6.3h 98.8％ Comparative Example 1 4.3μm \ 1.5h 95.4％ Comparative Example 2 1.8μm \ 3h 96.4％ Comparative Example 3 \ 2.3μm 7h 96.1％ Comparative Example 4 \ 0.5μm 8h 95.3％

[0090] As can be seen from Table 1, the present invention uses two sandpapers of different specifications to polish the target surface twice in sequence, which can effectively remove foreign matter and oxides on the target surface, so that the roughness of the side surface and the sputtering surface of the target meets the requirements, ensures the consistency of the outer surface of the target, improves the product yield, and reduces manual operation time, thereby improving production efficiency.

[0091] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A polishing method for LCD target material, characterized in that: The polishing method comprises: Providing a target material to be processed; Using a first sandpaper to rotationally polish the surface of the target material to be processed to obtain a polished surface; Use the second sandpaper to straighten the texture of the polished surface; The mesh number of the first sandpaper is smaller than the mesh number of the second sandpaper.

2. The polishing method according to claim 1, characterized in that: The surface of the target material to be processed is a side surface and / or a sputtering surface.

3. The polishing method according to claim 2, characterized in that: The material of the side surface and the sputtering surface independently includes any one of copper, aluminum, molybdenum, tantalum or titanium, or a combination of at least two thereof; Preferably, the material of the side surface is aluminum, and the material of the sputtering surface is molybdenum.

4. The polishing method according to claim 1, characterized in that: The mesh number of the first sandpaper is 100 to 150 meshes; Preferably, the mesh number of the second sandpaper is 180-350 meshes.

5. The polishing method according to claim 1, characterized in that: The rotary polishing comprises: attaching a first sandpaper to a grinding disc of a pneumatic polisher to polish the surface of the target material to be processed; Preferably, the rotation speed of the rotary polishing is 8000-11000 rpm; Preferably, the pressure between the first sandpaper and the target material to be processed is 0.3-0.5 MPa; Preferably, after the rotary polishing, the roughness of the surface of the target material to be processed is ≤0.6 μm.

6. The polishing method according to claim 2 or 3, characterized in that: When the texture of the side surface is straightened, the second sandpaper is attached to the grinding head of the robot arm to grind the target material to be processed.

7. The polishing method according to claim 6, characterized in that: The mesh number of the second sandpaper is 180 to 280 meshes; Preferably, the time for straightening the lines is 0.8 to 3 hours; Preferably, the pressure between the second sandpaper and the side surface is 0.8-1 kg; Preferably, after the lines are straightened, the roughness of the side surface is 2-4 μm.

8. The polishing method according to claim 2 or 3, characterized in that: When the sputtering surface is straightened, the second sandpaper is attached to the flat sanding machine to grind the target material to be processed.

9. The polishing method according to claim 8, characterized in that: The mesh number of the second sandpaper is 280 to 350 meshes; Preferably, the time for straightening the lines is 3 to 6.5 hours; Preferably, after the lines are straightened, the roughness of the sputtering surface is 0.7-0.9 μm.

10. The polishing method according to claim 1, characterized in that: The abrasives of the first sandpaper and the second sandpaper independently include any one of aluminum oxide, brown corundum, ceramic corundum, zirconium corundum particles or silicon carbide, or a combination of at least two of them.