Wafer supporting device for optical detection and thin film deposition equipment thereof

Abstract

The invention discloses a wafer supporting device for optical detection and thin film deposition equipment thereof, and the wafer supporting device for optical detection comprises an ejector pin which at least partially extends into a process chamber, an optical fiber bundle embedded in the ejector pin, and a signal transmitter and a signal receiver which are connected to the end part of the optical fiber bundle, a through hole extending in the length direction is formed in the ejector pin, the optical fiber bundle is embedded in the through hole and comprises a signal transmitting optical fiber and a signal receiving optical fiber, the signal transmitter is connected to the signal transmitting optical fiber, and the signal receiving optical fiber is connected to the signal receiving optical fiber. According to the wafer supporting device for optical detection and the thin film deposition equipment of the wafer supporting device, the temperature, the surface morphology and the cleaning state in the sealed vacuum process chamber can be detected. The thin film deposition equipment adopting the wafer supporting device for optical detection can obtain parameters in the process chamber more quickly, more conveniently and more accurately, so that the thin film deposition quality is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film deposition equipment, and in particular to a wafer supporting device for optical detection and a thin film deposition equipment thereof. Background Art

[0002] In traditional semiconductor process equipment, in order to ensure process uniformity, the process chamber is usually a fully enclosed vacuum chamber with highly symmetrical space and compact space. There is no space to install other devices except process functional structures. Therefore, it often does not have an optical detection window and there are no conditions for optical detection.

[0003] However, optical detection methods can detect some important parameters of the process chamber in real time, such as inner wall temperature, inner wall morphology, cleaning status, etc. Online detection of the process chamber can accurately evaluate the equipment status and greatly reduce equipment maintenance time. Therefore, it is necessary to design an optical detection structure for the closed process chamber to realize internal parameter detection. Summary of the invention

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art and to provide a wafer support device for optical detection and a thin film deposition device thereof, so as to solve the technical problem that an optical detection unit cannot be provided in the existing process chamber.

[0005] To achieve the above object, the present invention adopts the following technical solutions:

[0006] In a first aspect, an embodiment of the present invention provides a wafer support device for optical detection, comprising: a pin at least partially extending into a process chamber, an optical fiber bundle embedded in the pin, and a signal transmitter and a signal receiver connected to ends of the optical fiber bundle, wherein the pin is provided with a through hole extending along a length direction, the optical fiber bundle is embedded in the through hole, the optical fiber bundle comprises a signal transmitting optical fiber and a signal receiving optical fiber, the signal transmitter is connected to the signal transmitting optical fiber, and the signal receiving optical fiber is connected to the signal receiving optical fiber.

[0007] An embodiment of the present invention also provides another wafer support device for optical detection, which includes: a plurality of ejector pins partially extending into a process chamber, an optical fiber bundle embedded in the ejector pins, and a signal receiver connected to the outer end of the optical fiber bundle; the optical fiber bundle is used to conduct thermal radiation light in the process chamber, and is collected by the signal receiver and converted into a temperature value corresponding to the process chamber.

[0008] Among them, the outer end of at least one of the optical fiber bundles is also connected to a signal transmitter, and the signal transmitter is a laser transmitter. The laser transmitter emits a laser beam which is transmitted from the optical fiber bundle to the process chamber, and after being reflected by the process chamber, is transmitted from another optical fiber bundle to the signal receiver, so as to detect the inner wall morphology of the process chamber.

[0009] Wherein, the laser emitter is a He-Ne laser.

[0010] Among them, at least one outer end of the optical fiber bundle is also connected to a signal transmitter, and the signal transmitter is an infrared light generator. The infrared light generator emits infrared light and transmits it to the process chamber through the optical fiber bundle, so as to detect the cleaning status in the process chamber.

[0011] Wherein, the ejector pin is disposed on the heating plate, and the optical fiber is passed through any position of the ejector pin located outside the heating plate.

[0012] Wherein, the bottom end of the ejector pin is also connected to a first driving unit, and the first driving unit is used to drive the ejector pin to rotate.

[0013] Wherein, the first driving unit is also connected to a second driving unit, and the second driving unit is used to drive the first driving unit to move up and down, and synchronously drive the ejector to move up and down.

[0014] The outer wall of the process chamber is further provided with a bellows, the lower end of which is connected to the housing of the first driving unit, and after the ejector pin passes through the wall of the process chamber and the bellows, the lower end is connected to the driving end of the first driving unit.

[0015] In a second aspect, an embodiment of the present invention provides a thin film deposition device, wherein the thin film deposition device comprises a wafer support device for optical detection as described in any one of the above.

[0016] The wafer support device for optical detection and the thin film deposition equipment thereof of the present invention are provided with a through hole in the ejector pin, an optical fiber or an optical fiber bundle is embedded in the through hole, the internal heat radiation light or the signal emitted by the external signal transmitter is transmitted through the optical fiber, and the reflected signal is received in combination with another optical fiber, thereby completing the temperature, surface and cleaning state detection in the sealed vacuum process chamber. The thin film deposition equipment using the wafer support device for optical detection can obtain the parameters in the process chamber more quickly, more conveniently and more accurately, thereby improving the quality of thin film deposition.

[0017] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the following preferred embodiments are specifically cited and described in detail as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 and Figure 2 Schematic diagram of the structure of a wafer support device for optical detection according to different viewing angles of an embodiment of the present invention.

[0019] Figure 3 This is a schematic diagram of the structure of a wafer support device for optical detection according to an embodiment of the present invention after the wafer is removed.

[0020] Figure 4 It is a bottom view of a wafer support device for optical inspection according to an embodiment of the present invention.

[0021] Figure 5 for Figure 4 AA section view is shown.

[0022] Figure 6 It is a schematic diagram of the structure of a support component portion of a wafer support device for optical inspection according to an embodiment of the present invention.

[0023] Figure 7 for Figure 6 The schematic diagram of the structure with the shield part removed is shown.

[0024] Figure 8 for Figure 5 The enlarged structural schematic diagram of local A is shown.

[0025] Description of reference numerals:

[0026] Wafer support device 100 for optical inspection, bottom cover 1, heating plate 2, support assembly 3, wafer 4, optical fiber bundle 5, connecting seat 31, bellows 32, first driving unit 33, ejector pin 34, second driving unit 35, rotating module 351, screw rod 352, screw plate 353, protective cover 354, through hole 341, and through hole 311. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0029] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships described in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0030] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0031] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be connected, detachably connected, or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0032] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0033] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0034] In traditional semiconductor process equipment, in order to ensure process uniformity, the process chamber is usually a fully enclosed vacuum chamber with highly symmetrical space and compact space, and there is no space to install other devices except process functional structures. Therefore, it often does not have an optical detection window and is not suitable for optical detection. In order to solve the above problem, this embodiment discloses a wafer support device 100 for optical detection.

[0035] See also Figures 1 to 8 In this embodiment, a wafer support device 100 for optical detection is disclosed. The wafer support device 100 for optical detection is used to support a wafer 4 and can heat the wafer 4 through a heating plate 2, thereby realizing a thin film deposition process of a semiconductor process.

[0036] In one embodiment, the wafer support device 100 for optical detection includes: a pin 34 at least partially extending into a process chamber (not shown in this embodiment), an optical fiber bundle 5 embedded in the pin 34, and a signal transmitter (not shown) and a signal receiver (not shown) connected to the outer end of the optical fiber bundle 5, the outer end refers to an end located outside the process chamber, the pin 34 is provided with a through hole 341 extending along the length direction, the optical fiber bundle 5 is embedded in the through hole 341, the optical fiber bundle 5 includes a signal transmitting optical fiber and a signal receiving optical fiber, the signal transmitter is connected to the signal transmitting optical fiber, and the signal receiving optical fiber is connected to the signal receiving optical fiber. The signal transmitting optical fiber and the signal receiving optical fiber refer to the optical fiber that divides the optical fiber bundle 5 into an input signal optical fiber and an output signal optical fiber according to the signal direction thereof, and their physical structures are both optical fibers.

[0037] In this embodiment, a signal transmitting optical fiber and a signal receiving optical fiber are provided in the through hole 341 in the same ejector pin 34. The external detection signal can be transmitted into the process chamber through the signal transmitting optical fiber, and the detection optical signal can be transmitted to the external signal recognition and processing unit through the signal receiving optical fiber. The detection optical signal is converted into corresponding detection information such as temperature, cleanliness and surface quality after processing.

[0038] like Figures 1 to 3As shown, in this embodiment, the entire structure of the process chamber is not shown, only the bottom cover 1 part of the process chamber is shown. The bottom cover 1 and other structures of the process chamber together form a sealed vacuum process chamber, and the semiconductor thin film deposition process is completed in this process chamber. Specifically, the upper part of the bottom cover 1 and the process chamber are enclosed to form a sealed vacuum process chamber. At the same time, it should be noted that other necessary process units in the process chamber are not described in detail here, and their specific structures are all necessary functional units corresponding to the existing different process methods.

[0039] The embodiment of the present invention also provides another wafer support device 100 for optical inspection, please refer to Figures 1 to 8 , the wafer support device 100 for optical detection includes: a plurality of ejector pins 34 partially extending into the process chamber, an optical fiber bundle 5 embedded in the ejector pins 34, and a signal receiver (not shown in the figure) connected to the outer end of the optical fiber bundle 5, at which time the optical fiber bundle 5 is used to detect the temperature value of the process chamber. The heating plate 2 in the process chamber generates heat to heat the wafer 4, and the process chamber will heat up as a result. The optical fiber bundle 5 is used to conduct the thermal radiation light in the process chamber, and is collected and converted into the temperature value of the corresponding process chamber by the signal receiver. In this embodiment, the optical fiber bundle 5 is only used to conduct the thermal radiation light in the process chamber to the outside, and after being received by the external signal receiving unit, the signal is processed and converted into the corresponding process chamber implementation parameter value. In this embodiment, the thermal radiation light of the process chamber is directly collected without the need for external input detection light.

[0040] Among them, the optical fiber bundle 5 adopts fluorescent optical fiber, which collects thermal radiation light in a specific area and converts it into a fluorescent signal. The fluorescent signal is transmitted to the external signal receiving unit, such as a photon detector, through the optical fiber bundle 5. The photon detector then converts the collected optical signal into an electrical signal. The electrical signal can be processed by a control and computing device such as a computer to obtain a corresponding temperature value, which is output to the user or an important reference indicator for process control.

[0041] It should be noted that when the ejector pin 34 is controllably rotatable, the corresponding optical fiber 5 is synchronously controlled to rotate, so as to realize rotational scanning detection of the process chamber. At this time, the precision and accuracy of temperature detection can be improved through scanning detection at different positions.

[0042] In this embodiment, an optical fiber bundle 5 is used to transmit the thermal radiation light of the process chamber to an external photon detector for detection, which solves the problem that the existing process chamber cannot measure the temperature of the chamber wall or wafer in real time, online and accurately. At the same time, this detection method also avoids the influence of the contact temperature sensor on the radio frequency circuit, while saving internal space.

[0043] Please refer again Figures 3 to 5At least one of the outer ends of the optical fiber bundles 5 is also connected to a signal transmitter (not shown). In one embodiment, the signal transmitter is a laser transmitter. The laser transmitter emits a laser beam which is transmitted from the optical fiber bundle 5 to the process chamber. After being reflected by the process chamber, the laser beam is transmitted from another optical fiber bundle to the signal receiver to detect the inner wall morphology of the process chamber.

[0044] In this embodiment, the optical fiber bundle 5 in one or more groups of ejector pins 34 is used to transmit the external detection signal into the process chamber, and the optical fiber bundle 5 in another group or more groups of ejector pins 34 is used to transmit the signal reflected in the process chamber to the external signal receiving unit. The signal transmitter is a laser transmitter. After the laser is transmitted to the process chamber through the optical fiber bundle 5, it will be reflected. The reflected laser beam is transmitted to the external signal receiver again through the optical fiber bundle. According to the signal difference between the signal transmitter and the signal receiver, a large amount of data is collected and the collected data is processed by software algorithm to finally obtain the inner wall morphology image of the process chamber.

[0045] The laser emitter is a He-Ne laser, which emits laser light of a fixed wavelength. The reflected light intensity varies with the roughness of the wall surface, and the roughness of the detection position can be inverted based on the reflected light intensity.

[0046] In another embodiment, the outer end of at least one of the optical fiber bundles 5 is also connected to a signal transmitter, and the signal transmitter is an infrared light generator. The infrared light generator emits infrared light which is transmitted to the process chamber through the optical fiber bundle 5, and the reflected infrared light is transmitted back to the signal receiver through another optical fiber bundle, thereby detecting the cleaning status in the process chamber.

[0047] Among them, the infrared light source emits infrared detection light, and the wavelength covers the absorption peak of the diagnosed species (mainly process gas); when cleaning in the chamber, the infrared detection light is emitted from the window end of one ejector pin 34, and the window of another ejector pin 34 collects the detection light absorbed by the species in the chamber, and transmits this signal light to the optical signal receiver.

[0048] Among them, the signal receiver adopts a grating spectrometer, which can read the signal light with high resolution and judge the cleaning status of the chamber by reading the changes in the absorption peak intensity of cleaning-related species.

[0049] Please refer again Figures 1 to 7 , the ejector pin 34 is inserted into the heating plate 4, and the optical fiber bundle 5 is inserted from any position of the ejector pin 34 outside the heating plate 2. Figure 3 As shown, the upper end of the ejector pin 34 extends out of the upper disk surface of the heating disk 2, and the optical fiber bundle 5 is led out from the ejector pin 34 at any position above the upper disk surface, so that the optical signal can be output from the top or side of the ejector pin 34.

[0050] In this embodiment, the heating plate 2 is embedded with three groups of ejector pins 34, which are distributed at equal central angles. The three groups of ejector pins 34 are controlled to rise and fall synchronously. When rising, they cooperate with external robots to take and place wafers 4. When descending, wafers 4 are placed on the surface of the heating plate 2. At this time, wafers 4 are heated so that wafers 4 reach the optimal temperature for thin film deposition.

[0051] Please refer again Figures 6 to 8 The bottom end of the ejector pin 34 is also connected to a first driving unit 33, and the first driving unit 33 is used to drive the ejector pin 34 to rotate. In this embodiment, in order to facilitate the assembly of the external signal receiving unit, a connecting seat 31 is further provided between the first driving unit 33 and the ejector pin 34, and a through hole 311 for the ejector pin 34 to pass through and a through hole 311 for the optical fiber bundle 5 to pass through are provided in the connecting seat 31.

[0052] The first driving unit 33 is further connected to a second driving unit 35 , and the second driving unit 35 is used to drive the first driving unit 33 to move up and down, and simultaneously drive the ejector pin 34 to move up and down.

[0053] Specifically, the outer wall of the process chamber (specifically, the bottom of the bottom cover 1) is further provided with a bellows 32, the lower end of which is connected to the housing of the first driving unit 33, and the lower end of the ejector pin 34 is connected to the driving end of the first driving unit 33 after passing through the chamber wall of the process chamber and the bellows 32. The bellows 32 can ensure that the ejector pin 34 always maintains a sealed state in the process chamber during the lifting and lowering action, and the bellows 32 can be extended and retracted as needed.

[0054] The second driving unit 35 includes a rotating module 351, a screw rod 352 connected to the output shaft of the rotating module 351, and a screw plate 353 screwed to the screw rod 352. The housing of the first driving unit 33 is fixedly connected to the screw plate 353. The rotating module 351 can be a motor, etc., which drives the screw rod 352 to rotate and synchronously drives the screw plate 353 to rise and fall, so that the first driving unit 33 and other components connected to the screw plate 353 can achieve a lifting action. A protective cover 354 is also provided on the housing of the rotating module 351, and the protective cover 354 is also covered on the outside of the screw rod 352.

[0055] It should be noted that, in the above-mentioned embodiment, both the inner wall morphology detection and the cleaning status detection can be detected by a single ejector pin 34 , and at this time, a signal transmitting optical fiber and a signal receiving optical fiber are simultaneously arranged in the single ejector pin 34 .

[0056] In this embodiment, three groups of ejector pins 34 are provided, and correspondingly, three groups of bellows 32, connecting seat 31, first driving unit 33 and second driving unit 35 for controlling the movement of ejector pins 34 and detecting optical signals are also provided. Each group of ejector pins 34, bellows 32, connecting seat 31, first driving unit 33 and second driving unit 35 constitutes a supporting unit 3.

[0057] In a second aspect, an embodiment of the present invention provides a thin film deposition device, wherein the thin film deposition device comprises a wafer support device 100 for optical detection as described in any one of the above.

[0058] The wafer support device for optical detection and the thin film deposition equipment thereof of this embodiment are provided with a through hole in the ejector pin, an optical fiber or optical fiber bundle is embedded in the through hole, the internal heat radiation light or the signal emitted by the external signal transmitter is transmitted through the optical fiber, and the reflected signal is received in combination with another optical fiber, thereby completing the temperature, surface and cleaning state detection in the sealed vacuum process chamber. The thin film deposition equipment using the wafer support device for optical detection can obtain the parameters in the process chamber more quickly, more conveniently and more accurately, thereby improving the quality of thin film deposition.

[0059] The above examples are only used to further illustrate the technical content of the present invention, so that readers can understand it more easily, but it does not mean that the implementation of the present invention is limited to this. Any technical extension or re-creation made according to the present invention is protected by the present invention. The protection scope of the present invention shall be subject to the claims.

Claims

1. A wafer support device for optical inspection, characterized in that: include: A pin at least partially extends into a process chamber, an optical fiber bundle is embedded in the pin, and a signal transmitter and a signal receiver are connected to the outer ends of the optical fiber bundle. A through hole is provided in the pin, the optical fiber bundle is embedded in the through hole, the optical fiber bundle includes a signal transmitting optical fiber and a signal receiving optical fiber, the signal transmitter is connected to the signal transmitting optical fiber, and the signal receiving optical fiber is connected to the signal receiving optical fiber.

2. A wafer support device for optical inspection, characterized in that: include: A plurality of ejector pins partially extending into the process chamber, an optical fiber bundle embedded in the ejector pins, and a signal receiver connected to an outer end of the optical fiber bundle; The optical fiber bundle is used to conduct the thermal radiation light in the process chamber, and is collected by the signal receiver and converted into a temperature value of the corresponding process chamber.

3. The wafer support device for optical detection according to claim 2, characterized in that: The outer end of at least one of the optical fiber bundles is also connected to a signal transmitter, which is a laser transmitter. The laser transmitter emits a laser beam which is transmitted from the optical fiber bundle to the process chamber, and then is reflected by the process chamber and transmitted from another optical fiber bundle to the signal receiver, so as to detect the inner wall morphology of the process chamber.

4. The wafer support device for optical detection according to claim 3, characterized in that: The laser emitter is a He-Ne laser.

5. The wafer support device for optical detection according to claim 2, characterized in that: The outer end of at least one of the optical fiber bundles is also connected to a signal transmitter, which is an infrared light generator. The infrared light generator emits infrared light which is transmitted to the process chamber through the optical fiber bundle and then transmitted back to the signal receiver through another optical fiber bundle, thereby detecting the cleaning status in the process chamber.

6. The wafer support device for optical inspection according to any one of claims 2 to 5, characterized in that: The ejector pin is inserted into the heating plate, and the optical fiber bundle is inserted from any position of the ejector pin outside the heating plate.

7. The wafer support device for optical detection according to claim 6, characterized in that: The bottom end of the ejector pin is also connected to a first driving unit, and the first driving unit is used to drive the ejector pin to rotate.

8. The wafer support device for optical inspection according to claim 7, characterized in that: The first driving unit is also connected to the second driving unit, and the second driving unit is used to drive the first driving unit to move up and down, and synchronously drive the ejector to move up and down.

9. The wafer support device for optical inspection according to claim 8, characterized in that: The outer wall of the process chamber is also provided with a bellows, the lower end of which is connected to the housing of the first driving unit. After the ejector pin passes through the wall of the process chamber and the bellows, the lower end thereof is connected to the driving end of the first driving unit.

10. A thin film deposition device, characterized in that: The thin film deposition equipment comprises a wafer support device for optical detection as described in any one of claims 1 to 9.

Images