Wafer boat device and plasma-assisted chemical vapor deposition equipment

Abstract

The invention provides a wafer boat device and plasma-assisted chemical vapor deposition equipment. The wafer boat device comprises a plurality of first positive electrode plates, a plurality of first negative electrode plates, at least one second positive electrode plate and at least one second negative electrode plate. And the first positive electrode plate, the first negative electrode plate, the second positive electrode plate and the second negative electrode plate are arranged at intervals in a positive-negative staggered manner. The first positive electrode plate and the second positive electrode plate are equipotential to each other, and the first negative electrode plate and the second negative electrode plate are equipotential to each other. And the conductivity of the second positive electrode plate and the second negative electrode plate is greater than that of the first positive electrode plate and the first negative electrode plate. The first positive electrode plate, the first negative electrode plate, the second positive electrode plate and the second negative electrode plate are used for bearing a plurality of substrates. The electrical conductivity of the second positive electrode plate and the second negative electrode plate is greater than that of the first positive electrode plate and the first negative electrode plate, so that the impedance distribution of the wafer boat device is uniform, and the electric field intensity and the electric field uniformity of the wafer boat device can be effectively improved.

Description

Technical Field

[0001] The present disclosure relates to a deposition technology, and more particularly to a wafer boat device and a plasma-assisted chemical vapor deposition apparatus. Background Art

[0002] Due to energy shortages, countries around the world continue to develop various viable alternative energy sources, among which solar cells for solar power generation have attracted the most attention. In conventional semiconductor process technology, tunnel oxide passivated contact (TOPCon) solar cells are one of the new generation of high-efficiency silicon crystalline solar cell products. The production line equipment of TOPCon solar cells is compatible with passivated emitter and rear cell (PERC) solar cells, and has power generation advantages such as high bifaciality, low temperature coefficient, and low attenuation rate. TOPCon solar cells combined with bifacial module technology can greatly improve the efficiency of outdoor power generation, which exceeds the efficiency of conventional PERC solar cell products, so a larger device capacity can be achieved with a lower construction area.

[0003] Currently, the conversion efficiency of silicon solar cells is about 23.5%. In the future, the cost reduction of solar cell systems must rely on continuous technological improvement, increased mass production scale, and reduced packaging costs.

[0004] In order to increase the production output of solar cells, graphite boats are designed to increase the number of substrates they can carry. However, the low conductivity of graphite causes attenuation after power output, resulting in poor electric field uniformity in the graphite boat, which affects the uniformity of plasma and causes uneven coating thickness on the substrates loaded in front and behind the graphite boat. Summary of the invention

[0005] Therefore, an object of the present disclosure is to provide a wafer boat device and a plasma-assisted chemical vapor deposition apparatus, which can make the power of the wafer boat device uniform and effectively improve the electric field uniformity of the wafer boat device, thereby being able to deposit high-uniformity thin films in large areas in batches.

[0006] According to the above-mentioned purpose of the present disclosure, a wafer boat device is proposed. This wafer boat device includes a plurality of first positive electrode plates, a plurality of first negative electrode plates, at least one second positive electrode plate, and at least one second negative electrode plate. The first positive electrode plate, the first negative electrode plate, the second positive electrode plate, and the second negative electrode plate are arranged in a positive and negative staggered manner, and the first positive electrode plate and the second positive electrode plate are at the same potential, and the first negative electrode plate and the second negative electrode plate are at the same potential. The conductivity of the second positive electrode plate and the conductivity of the second negative electrode plate are both greater than the conductivity of the first positive electrode plate and the conductivity of the first negative electrode plate. Each of the first positive electrode plate, the first negative electrode plate, the second positive electrode plate, and the second negative electrode plate is configured to carry a plurality of substrates.

[0007] According to one embodiment of the present disclosure, the ratio of the conductivity of the second positive electrode plate to the conductivity of the first positive electrode plate is from 2.5:1 to 175:1, and the ratio of the conductivity of the second negative electrode plate to the conductivity of the first negative electrode plate is from 2.5:1 to 175:1.

[0008] According to an embodiment of the present disclosure, the second positive electrode plate and the at least one second negative electrode plate are made of a high temperature resistant good conductor metal, and the melting point of the high temperature resistant good conductor metal is equal to or greater than 400°C.

[0009] According to an embodiment of the present disclosure, each of the second positive electrode plate and the second negative electrode plate comprises a main body and a metal layer. The metal layer covers at least one side of the main body, wherein the conductivity of the metal layer is greater than the conductivity of the main body.

[0010] According to an embodiment of the present disclosure, the material of the first positive electrode plate and the first negative electrode plate is graphite, and the material of the metal layer is copper or silver paste.

[0011] According to an embodiment of the present disclosure, the number of the second positive electrode plates and the number of the second negative electrode plates are both 1, and the second positive electrode plates and the second negative electrode plates are arranged adjacent to each other from the outermost side of the wafer boat device.

[0012] According to an embodiment of the present disclosure, the number of the second positive electrode plates and the number of the second negative electrode plates are both 1, and the second negative electrode plates and the second positive electrode plates are separated by a first positive electrode plate and a first negative electrode plate.

[0013] According to an embodiment of the present disclosure, the number of the second positive electrode plates and the number of the second negative electrode plates are both 2, and the second positive electrode plates and the second negative electrode plates are arranged adjacent to each other.

[0014] According to an embodiment of the present disclosure, the number of the second positive electrode plates is different from the number of the at least one second negative electrode plate.

[0015] According to one embodiment of the present disclosure, the spacing between any two adjacent ones of the first positive electrode plate, the first negative electrode plate, the second positive electrode plate, and the second negative electrode plate is 13.5±0.5mm, and the minimum spacing between two adjacent ones of the substrates located on the first positive electrode plate, the first negative electrode plate, the second positive electrode plate, and the second negative electrode plate that face each other is 10.6±0.5mm.

[0016] According to the above-mentioned purpose of the present disclosure, a plasma-assisted chemical vapor deposition device is also proposed. This plasma-assisted chemical vapor deposition device includes a furnace tube, a wafer boat device of any of the above-mentioned embodiments, a power module, and a gas supply system. The furnace tube has a reaction chamber. The wafer boat device is arranged in the reaction chamber. The power module is electrically connected to the first positive electrode plate and the second positive electrode plate, and the first negative electrode plate and the second negative electrode plate, and is configured to supply power to the first positive electrode plate and the second positive electrode plate, and the first negative electrode plate and the second negative electrode plate. The gas supply system is connected to the reaction chamber fluid, and is configured to supply at least one process gas, or at least one process gas and at least one precursor gas to the reaction chamber.

[0017] According to an embodiment of the present disclosure, the furnace tube is a quartz furnace tube.

[0018] According to one embodiment of the present disclosure, the power module is a radio frequency power module, and the operating frequency of the power module is 40kHz. The crystal boat device also includes a radio frequency electrode series connection device and a ground electrode series connection device. The radio frequency electrode series connection device is connected to the first positive electrode plate and the second positive electrode plate. The ground electrode series connection device is connected to the first negative electrode plate and the second negative electrode plate.

[0019] According to the above embodiments, the wafer boat device disclosed in the present invention is provided with electrode plates with different conductivity, so that the conductivity of some electrode plates is higher than that of other electrode plates, thereby making the impedance distribution of the wafer boat device uniform, and effectively improving the electric field strength and uniformity of the wafer boat device. Therefore, the present invention can reduce ion bombardment in large-area batch deposition, form a highly uniform thin film with a dense surface structure, and further improve the film quality and the photoelectric conversion efficiency of solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The following detailed description in conjunction with the accompanying drawings will provide a better understanding of the aspects of the present disclosure. It should be noted that, in accordance with standard industry practice, the features are not drawn to scale. In fact, the size of each feature may be increased or decreased at will to make the discussion clearer.

[0021] Figure 1 is a three-dimensional schematic diagram illustrating a wafer boat device according to an embodiment of the present disclosure;

[0022] Figure 2 is a front view schematic diagram of a wafer boat device according to one embodiment of the present disclosure;

[0023] Figure 3 is a partial front view schematic diagram of a second positive electrode plate according to one embodiment of the present disclosure;

[0024] Figure 4 It is drawn along Figure 3A schematic partial cross-sectional view of the second positive electrode plate obtained by cutting along line AA;

[0025] Figure 5 FIG. 4 is a schematic diagram of a plasma assisted chemical vapor deposition apparatus according to an embodiment of the present disclosure.

[0026]

Explanation of symbols

[0027] 100: Crystal boat device

[0028] 110: first positive electrode plate

[0029] 112: Side

[0030] 112a: bearing area

[0031] 120: first negative electrode plate

[0032] 122: Side

[0033] 122a: bearing area

[0034] 130: Second positive electrode plate

[0035] 132: Side

[0036] 132a: bearing area

[0037] 140: Second negative electrode plate

[0038] 142: Side

[0039] 142a: bearing area

[0040] 150: Radio frequency electrode series connection device

[0041] 160: Grounding electrode series connection device

[0042] 170: Second positive electrode plate

[0043] 170a: Side

[0044] 170a': bearing area

[0045] 172: Main body

[0046] 172a: Side

[0047] 174:Metal layer

[0048] 200: Plasma assisted chemical vapor deposition equipment

[0049] 210: Furnace pipe

[0050] 212: Reaction chamber

[0051] 220: Power module

[0052] 220a: Wire

[0053] 220b: Wire

[0054] 230: Gas supply system

[0055] 232:Process gas supply system

[0056] 232a: Gas pipeline

[0057] 234: Precursor gas supply system

[0058] 234a: Gas pipeline

[0059] A: Area

[0060] AA:Line

[0061] B: Area

[0062] C: Region

[0063] D: Area

[0064] E: Area

[0065] F: Area

[0066] G: Spacing DETAILED DESCRIPTION

[0067] The following is a detailed discussion of the embodiments of the present disclosure. However, it is to be understood that the embodiments provide many applicable concepts that can be implemented in a variety of specific contexts. The embodiments discussed and disclosed are for illustration only and are not intended to limit the scope of the present disclosure. All embodiments of the present disclosure disclose a variety of different features, but these features can be implemented individually or in combination as needed.

[0068] In addition, the terms “first”, “second”, etc. used in this document do not particularly refer to an order or sequence, but are only used to distinguish elements or operations described with the same technical terminology.

[0069] The spatial relationship between two elements described in the present disclosure is applicable not only to the orientations shown in the drawings, but also to orientations not shown in the drawings, such as an inverted orientation. In addition, the term "connection", "electrical connection", or the like between two components in the present disclosure is not limited to direct connection or electrical connection between the two components, but may also include indirect connection or electrical connection as required.

[0070] Please refer to Figure 1 and Figure 2, which respectively illustrate a three-dimensional schematic diagram and a front view schematic diagram of a wafer boat device 100 according to an embodiment of the present disclosure. The wafer boat device 100 can be applied to a furnace-tube plasma-assisted chemical vapor deposition process to perform large-area batch thin film deposition. The wafer boat device 100 can mainly include a plurality of first positive electrode plates 110, a plurality of first negative electrode plates 120, at least one second positive electrode plate 130, and at least one second negative electrode plate 140. In an exemplary embodiment, the total number of the first positive electrode plate 110, the first negative electrode plate 120, the second positive electrode plate 130, and the second negative electrode plate 140 is 21. However, the number of electrode plates of the wafer boat device 100 can be increased or decreased according to actual process requirements, and the present embodiment is not limited thereto.

[0071] The first positive electrode plate 110, the first negative electrode plate 120, the second positive electrode plate 130, and the second negative electrode plate 140 are arranged in a positive-negative staggered manner. Figure 2 In the embodiment shown, a negative electrode plate is inserted between two positive electrode plates, and a positive electrode plate is inserted between two negative electrode plates. In addition, the first positive electrode plate 110, the first negative electrode plate 120, the second positive electrode plate 130, and the second negative electrode plate 140 are all plate-shaped structures, and any two adjacent ones face each other.

[0072] The first positive electrode plates 110 are at the same potential. Each first positive electrode plate 110 has two side surfaces 112 facing each other. Each side surface 112 has a plurality of supporting areas 112a. Each supporting area 112a can be used to support one or more substrates to be coated. Figure 1 In the illustrated embodiment, each side 112 includes 6 supporting areas 112a, so that one first positive electrode plate 110 can support at least 12 substrates. The first positive electrode plate 110 is made of a high temperature resistant conductive material. For example, the high temperature resistant conductive material can withstand temperatures above 400°C. In some exemplary embodiments, the material of the first positive electrode plate 110 is graphite. The conductivity of graphite is 4×10 5 S / m.

[0073] The first negative electrode plates 120 are at the same potential as each other. Each first negative electrode plate 120 has two side surfaces 122 opposite to each other. Each side surface 122 also has a plurality of supporting areas 122a. Each supporting area 122a can support one or more substrates to be coated. Like the first positive electrode plate 110, each side surface 122 of the first negative electrode plate 120 may include 6 supporting areas 122a, and one first negative electrode plate 120 can support at least 12 substrates. The first negative electrode plate 120 is made of a conductive material that can withstand temperatures above 400°C, for example. In some exemplary embodiments, the material of the first negative electrode plate 120 may be graphite.

[0074] The second positive electrode plate 130 and all the first positive electrode plates 110 are at the same potential. The second positive electrode plate 130 has two side surfaces 132 opposite to each other. Each side surface 132 is provided with a plurality of supporting areas 132a, and each supporting area 132a can support at least one substrate to be coated. Like the first positive electrode plate 110, each side surface 132 of the second positive electrode plate 130 can be provided with 6 supporting areas 132a, and the second positive electrode plate 130 can support at least 12 substrates.

[0075] The conductivity of the second positive electrode plate 130 is greater than the conductivity of the first positive electrode plate 110 and the conductivity of the first negative electrode plate 120. For example, the ratio of the conductivity of the second positive electrode plate 130 to the conductivity of the first positive electrode plate 110 may be from 2.5:1 to 175:1. The second positive electrode plate 130 is made of a high temperature resistant good conductor metal. For example, the melting point of the second positive electrode plate 130 may be equal to or greater than 400°C. In some exemplary embodiments, the second positive electrode plate 130 is a single-layer plate structure, and the material of the second positive electrode plate 130 is copper or silver paste. The conductivity of copper is 5.8×10 7 S / m, the conductivity of silver paste can be 7×10 7 S / m.

[0076] Similarly, the second negative electrode plate 140 and all the first negative electrode plates 120 are at the same potential. In some embodiments, the wafer boat device 100 further includes a radio frequency electrode series connection device 150 and a ground electrode series connection device 160. The radio frequency electrode series connection device 150 is connected to the first positive electrode plate 110 and the second positive electrode plate 130 to electrically connect these first positive electrode plates 110 and the second positive electrode plates 130. The ground electrode series connection device 160 is connected to the first negative electrode plate 120 and the second negative electrode plate 140 to electrically connect these first negative electrode plates 120 and the second negative electrode plates 140.

[0077] The second negative electrode plate 140 has two side surfaces 142 facing each other. The side surface 112 of the first positive electrode plate 110, the side surface 122 of the first negative electrode plate 120, the side surface 132 of the second positive electrode plate 130, and any two adjacent side surfaces 142 of the second negative electrode plate 140 face each other. Each side surface 142 is provided with a plurality of supporting areas 142a, wherein each supporting area 142a can support at least one substrate to be coated. The second negative electrode plate 140 may be similar to the first positive electrode plate 110, each side surface 142 is provided with 6 supporting areas 142a, and the second negative electrode plate 140 can support at least 12 substrates. In the present embodiment, the two outermost electrode plates located at the wafer boat device 100 only have the sides facing inwards to load substrates. For example, in Figure 2In the wafer boat device 100 shown, the outward-facing side 112 of the leftmost first positive electrode plate 110 and the outward-facing side 132 of the rightmost second positive electrode plate 130 are not loaded with substrates. There is another shell (not shown) outside the two outward-facing sides 112 and 132, and the shell has the same potential as these positive electrode plates.

[0078] In some embodiments, the spacing G between any two adjacent ones of the first positive electrode plate 110, the first negative electrode plate 120, the second positive electrode plate 130, and the second negative electrode plate 140 is 13.5±0.5 mm. In addition, among the substrates loaded on the first positive electrode plate 110, the first negative electrode plate 120, the second positive electrode plate 130, and the second negative electrode plate 140, the minimum spacing between the two substrates facing each other is 10.6±0.5 mm.

[0079] The conductivity of the second negative electrode plate 140 is also greater than the conductivity of the first positive electrode plate 110 and the conductivity of the first negative electrode plate 120. For example, the ratio of the conductivity of the second negative electrode plate 140 to the conductivity of the first negative electrode plate 120 may be from 2.5:1 to 175:1. For example, the second negative electrode plate 140 may be made of a high temperature resistant good conductor metal having a melting point equal to or greater than 400° C. In some exemplary embodiments, the second negative electrode plate 140 is a single-layer plate structure, and the material of the second negative electrode plate 140 is copper or silver paste.

[0080] In some embodiments, the number of the second positive electrode plate 130 and the second negative electrode plate 140 are both 1, and the second positive electrode plate 130 and the second negative electrode plate 140 are arranged from the outermost side of the wafer boat device 100, such as Figure 2 As shown in the rightmost side, they are arranged adjacent to each other. However, the second positive electrode plate 130 and the second negative electrode plate 140 may not be arranged from the outermost side of the wafer boat device 100, and the present disclosure is not limited thereto. In other embodiments where the number of the second positive electrode plate 130 and the second negative electrode plate 140 are both 1, the second positive electrode plate 130 and the second negative electrode plate 140 may be arranged non-adjacently. For example, the second positive electrode plate 130 is disposed at the outermost side of the wafer boat device 100, i.e., the rightmost side, and the second negative electrode plate 140 and the second positive electrode plate 130 are separated by a first positive electrode plate 110 and a first negative electrode plate 120. That is, as Figure 2 As shown, the second positive electrode plate 130 is located at the rightmost side of the wafer boat apparatus 100 , and the second negative electrode plate 140 is the fourth from the right side.

[0081] In some embodiments, the number of the second positive electrode plates 130 and the second negative electrode plates 140 are both 2, and the second positive electrode plates 130 and the second negative electrode plates 140 are adjacent to each other and arranged alternately from the outermost side of the wafer boat device 100, such as the rightmost side or the leftmost side. However, the second positive electrode plates 130 and the second negative electrode plates 140 may not be arranged from the outermost side of the wafer boat device 100, and the present disclosure is not limited thereto. Although the number of the second positive electrode plates 130 and the second negative electrode plates 140 in the above-mentioned embodiments are the same, the present embodiment is not limited thereto, and the number of the second positive electrode plates 130 and the second negative electrode plates 140 may be different, such as two second positive electrode plates 130 and one second negative electrode plate 140, or one second positive electrode plate 130 and two second negative electrode plates 140.

[0082] The second positive electrode plate and the second negative electrode plate of the wafer boat device disclosed in the present invention may also be a multilayer structure. The structure of the second positive electrode plate is used as an example below. The structure of the second negative electrode plate is the same as that of the second electrode plate, and will not be described again here. Figure 3 and Figure 4 , which respectively illustrate a partial front view of a second positive electrode plate 170 according to an embodiment of the present disclosure, and Figure 3 The second positive electrode plate 170 is a partial cross-sectional schematic diagram obtained by cutting along the line AA. The second positive electrode plate 170 has two side surfaces 170a opposite to each other. Each side surface 170a is provided with a plurality of supporting areas 170a' for supporting a substrate.

[0083] In this embodiment, the second positive electrode plate 170 may mainly include a main body 172 and a metal layer 174. The main body 172 is a plate-like structure and has two side surfaces 172a opposite to each other. The two side surfaces 172a of the main body 172 correspond to the two side surfaces 170a of the supporting substrate of the second positive electrode plate 170, respectively. The metal layer 174 covers at least one side surface 172a of the main body 172. The metal layer 174 may also be further covered on other side surfaces of the main body 172. The main body 172 and the metal layer 174 may both be made of a conductive material that is resistant to high temperatures above 400°C. The main body 172 and the metal layer 174 have different electrical conductivities. In some embodiments, the conductivity of the metal layer 174 is greater than the conductivity of the main body 172. For example, the material of the main body 172 may be graphite, and the material of the metal layer 174 may be copper or silver paste.

[0084] A conventional graphite boat and the boat device 100 of the present embodiment are used for simulation, and RF power is introduced into the positive electrode plate and the negative electrode plate of the graphite boat, and the first positive electrode plate 110, the first negative electrode plate 120, the second positive electrode plate 130, and the second negative electrode plate 140 of the boat device 100, respectively. The operating frequency of the RF power supply is 40kHz. Multiple sets of high and low conductivity ratios are designed, and the impedance changes of regions A to F of the graphite boat and the boat device 100 are measured using an oscilloscope. Table 1 below shows the impedance values ​​(R+Xs) of the six regions A to F of the graphite boat, and Table 2 below shows the impedance values ​​of the six regions A to F of the boat device 100.

[0085] Table 1

[0086]

[0087] Table 2

[0088]

[0089] It can be seen from Table 1 above that the impedance of the graphite crystal boat is relatively large at the RF power feeding end, and gradually decreases in the direction away from the RF power feeding end. The uneven impedance of the graphite crystal boat will lead to the uneven electric field distribution of the graphite crystal boat. In addition, it can be seen from Table 2 above that the impedance of the crystal boat device 100 disclosed in the present invention is 48.9±1Ω. Electric field simulation was performed on the graphite crystal boat and the crystal boat device 100. The simulation results showed that the electric field intensity of the crystal boat device 100 was improved, and the electric field uniformity of the crystal boat device 100 was better than that of the graphite crystal boat. Comparing the film uniformity of the batch crystal boat process, it can be clearly seen that the uneven impedance on the traditional graphite crystal boat seriously affects the uniformity of the film after the deposition process, while the crystal boat device 100 disclosed in the present invention has a uniform impedance distribution, so that the uniformity of the film after deposition is better.

[0090] The wafer boat device 100 can enhance the electric field energy of the wafer boat device 100 and effectively improve the electric field uniformity of the wafer boat device 100 by disposing the second positive electrode plate 130 and the second negative electrode plate 140 with higher conductivity than the first positive electrode plate 110 and the first negative electrode plate 120. Therefore, the application of the wafer boat device 100 can reduce ion bombardment, form a highly uniform thin film with a dense surface structure, and achieve uniform film coating in large areas in batches, thereby improving the film quality and reducing the production cost.

[0091] The wafer boat device 100 can be applied to a plasma-assisted chemical vapor deposition device. Figure 1 , Figure 2 ,and Figure 5 ,in Figure 51 is a schematic diagram of a plasma-assisted chemical vapor deposition apparatus 200 according to an embodiment of the present disclosure. The plasma-assisted chemical vapor deposition apparatus 200 may mainly include a furnace tube 210, a wafer boat device 100, a power module 220, and a gas supply system 230. The furnace tube 210 has a reaction chamber 212. The wafer boat device 100 is disposed in the reaction chamber 212, and a substrate loaded by the wafer boat device 100 may be subjected to a plasma-assisted chemical vapor deposition process in the reaction chamber 212. The furnace tube 210 is made of a material that can withstand the temperature of the plasma-assisted chemical vapor deposition process. In some exemplary embodiments, the furnace tube 210 is a quartz furnace tube.

[0092] The power module 220 can be electrically connected to the first positive electrode plate 110 and the second positive electrode plate 130, and the first negative electrode plate 120 and the second negative electrode plate 140 of the wafer boat device 100 through the wires 220a and 220b, respectively. Specifically, the wire 220a is connected to the RF electrode series connection device 150 of the wafer boat device 100, and the wire 220b is connected to the ground electrode series connection device 160. Thereby, the power module 220 can be electrically connected to the first positive electrode plate 110 and the second positive electrode plate 130, and the first negative electrode plate 120 and the second negative electrode plate 140, respectively, and supply power to the first positive electrode plate 110, the second positive electrode plate 130, the first negative electrode plate 120, and the second negative electrode plate 140. In some exemplary embodiments, the power module 220 is a radio frequency power module, and the operating frequency of the power module 220 is 40kHz.

[0093] The gas supply system 230 is fluidly connected to the reaction chamber 212 of the furnace tube 210. The gas supply system 230 can be used to supply at least one process gas, or at least one process gas and at least one precursor gas to the reaction chamber 212. For example, the gas supply system 230 may include a process gas supply system 232 and a precursor gas supply system 234. The process gas supply system 232 may be fluidly connected to the reaction chamber 212 through a gas pipeline 232a, and the process gas may be supplied to the reaction chamber 212 through the gas pipeline 232a. The precursor gas supply system 234 may be fluidly connected to the reaction chamber 212 through a gas pipeline 234a, and the precursor gas may be supplied to the reaction chamber 212 through the gas pipeline 234a. For example, the process gas may be a redox gas such as oxygen, nitrous oxide, water, etc., and the precursor gas may be SiH 4 ,TBP,TMA,BDESA,DEZ,TTIP,TMG,TMI,TDMA-Hf,MeCpPtMe 3 In some embodiments, the process gas supply system 232 and the precursor gas supply system 234 may further include a fast pneumatic valve and a flow meter (not shown) to control the supply of the process gas and the precursor gas.

[0094] The plasma-assisted chemical vapor deposition apparatus 200 may be a plasma-assisted atomic layer deposition apparatus. For example, the plasma-assisted chemical vapor deposition apparatus 200 may be used to deposit an atomic layer, such as a silicon oxide film, a polysilicon film, a zirconium oxide film, a hafnium oxide film, a silicon carbide film, a titanium carbide film, a tantalum nitride film, a tantalum carbonitride film, a copper film, an aluminum film, a zinc film, a tantalum film, a titanium film, a tungsten film, a tungsten nitride film, or a gallium nitride film, or any combination thereof.

[0095] From the above-mentioned embodiments, it can be known that the wafer boat device disclosed in the present invention is provided with electrode plates with different conductivity, so that the conductivity of some electrode plates is higher than that of other electrode plates, thereby making the impedance distribution of the wafer boat device uniform, and effectively improving the electric field strength and uniformity of the wafer boat device. Therefore, the present invention can improve the density of the thin film deposited on the substrate, and further improve the quality of the thin film and the photoelectric conversion efficiency of the solar cell, so as to achieve large-area batch deposition of thin films and effectively reduce the production cost of solar cells.

[0096] Although the present disclosure has been disclosed as above by way of embodiments, it is not intended to limit the present disclosure. Anyone with ordinary knowledge in this technical field may make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be determined by the definition of the attached claims.

Claims

1. A wafer boat device, characterized in that: The wafer boat device comprises: a plurality of first positive electrode plates; a plurality of first negative electrode plates; at least one second positive electrode plate; and At least one second negative electrode plate, wherein: The plurality of first positive electrode plates, the plurality of first negative electrode plates, the at least one second positive electrode plate, and the at least one second negative electrode plate are arranged in a positive-negative staggered manner, and the plurality of first positive electrode plates and the at least one second positive electrode plate are at the same potential, and the plurality of first negative electrode plates and the at least one second negative electrode plate are at the same potential; A conductivity of the at least one second positive electrode plate and a conductivity of the at least one second negative electrode plate are both greater than a conductivity of the plurality of first positive electrode plates and a conductivity of the plurality of first negative electrode plates; and Each of the plurality of first positive electrode plates, the plurality of first negative electrode plates, the at least one second positive electrode plate, and the at least one second negative electrode plate is configured to carry a plurality of substrates.

2. The wafer boat device according to claim 1, characterized in that: The ratio of the conductivity of the at least one second positive electrode plate to the conductivity of the plurality of first positive electrode plates is from 2.5:1 to 175:1, and the ratio of the conductivity of the at least one second negative electrode plate to the conductivity of the plurality of first negative electrode plates is from 2.5:1 to 175:

1.

3. The wafer boat device according to claim 1, characterized in that: The at least one second positive electrode plate and the at least one second negative electrode plate are made of a high temperature resistant good conductor metal, and the melting point of the high temperature resistant good conductor metal is equal to or greater than 400°C.

4. The wafer boat device according to claim 1, characterized in that: Each of the at least one second positive electrode plate and the at least one second negative electrode plate comprises: a subject; and A metal layer covers at least one side surface of the main body, wherein a conductivity of the metal layer is greater than a conductivity of the main body.

5. The wafer boat device according to claim 4, characterized in that: The materials of the plurality of first positive electrode plates and the plurality of first negative electrode plates are graphite, and the material of the metal layer is copper or silver paste.

6. The wafer boat device according to claim 1, characterized in that: The number of the at least one second positive electrode plate and the number of the at least one second negative electrode plate are both 1, and the second positive electrode plate and the second negative electrode plate are arranged adjacent to each other from an outermost side of the wafer boat device.

7. The wafer boat device according to claim 1, characterized in that: The number of the at least one second positive electrode plate and the number of the at least one second negative electrode plate are both 1, and the second negative electrode plate and the second positive electrode plate are separated by one of the plurality of first positive electrode plates and one of the plurality of first negative electrode plates.

8. The wafer boat device according to claim 1, characterized in that: The number of the at least one second positive electrode plate and the number of the at least one second negative electrode plate are both 2, and the plurality of second positive electrode plates and the plurality of second negative electrode plates are adjacent to each other and arranged alternately.

9. The wafer boat device according to claim 1, characterized in that: The number of the at least one second positive electrode plate is different from the number of the at least one second negative electrode plate.

10. The wafer boat device according to claim 1, characterized in that: The spacing between any two adjacent ones of the multiple first positive electrode plates, the multiple first negative electrode plates, the at least one second positive electrode plate, and the at least one second negative electrode plate is 13.5±0.5mm, and the minimum spacing between two facing ones of the multiple substrates respectively located on the multiple first positive electrode plates, the multiple first negative electrode plates, the at least one second positive electrode plate, and the at least one second negative electrode plate is 10.6±0.5mm.

11. A plasma-assisted chemical vapor deposition device, characterized in that: The plasma assisted chemical vapor deposition equipment includes: A furnace tube having a reaction chamber; A wafer boat device as claimed in any one of claims 1 to 10, arranged in the reaction chamber; a power module electrically connected to the plurality of first positive electrode plates and the at least one second positive electrode plate, and the plurality of first negative electrode plates and the at least one second negative electrode plate, and configured to supply power to the plurality of first positive electrode plates and the at least one second positive electrode plate, and the plurality of first negative electrode plates and the at least one second negative electrode plate; as well as A gas supply system is fluidically connected to the reaction chamber and is configured to supply at least one process gas, or the at least one process gas and at least one precursor gas to the reaction chamber.

12. The plasma-assisted chemical vapor deposition apparatus according to claim 11, characterized in that: The furnace tube is a quartz furnace tube.

13. The plasma-assisted chemical vapor deposition apparatus according to claim 11, characterized in that: The power module is a radio frequency power module, and an operating frequency of the power module is 40 kHz, wherein the wafer boat device further comprises: a radio frequency electrode series connection device connected to the plurality of first positive electrode plates and the at least one second positive electrode plate; and A grounding electrode series connection device is connected to the plurality of first negative electrode plates and the at least one second negative electrode plate.

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