Wafer diameter batch measurement device and method

Abstract

The present invention provides a wafer diameter batch measurement device and method, belonging to the field of semiconductor manufacturing technology, the wafer diameter batch measurement device includes a wafer support assembly and a measurement assembly, the wafer support assembly includes a plurality of support seats arranged at intervals, the support seats are arranged toward a first direction, the measurement assembly includes a plurality of light source emission modules arranged one-to-one with the support seats, the light source emission module is used to emit a light signal toward a second direction, the second direction is perpendicular to the first direction, the device can measure multiple wafers at one time, and improve the overall measurement efficiency, after the wafer to be measured is placed on the support seat, the wafer to be measured is arranged toward the first direction, the light source emission module emits parallel light toward the second direction, and the length of the projection of the wafer to be measured obtained by the signal processing module is the diameter of the wafer to be measured. The measuring device avoids the influence of human factors in the wafer diameter measurement process and improves the measurement accuracy.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor manufacturing, and more specifically, relates to a wafer diameter batch measurement device and method. Background Art

[0002] In the wafer processing process, after the single crystal silicon rod is sliced, the edge of the sliced ​​wafer needs to be rounded so that the edge can form a certain contour shape to improve the mechanical strength and processability of the wafer. At the same time, the diameter of the wafer is polished to a certain size to meet the customer's requirements. After polishing, the wafer needs to be tested to see if its diameter meets the customer's specifications. In addition, after the polishing process, the wafer usually only needs to go through one or two more processes, such as cleaning and epitaxial processes (if necessary), before the wafer product can be delivered to the customer. The polished wafer also needs to have its diameter measured to check whether it meets customer requirements.

[0003] In order to measure whether the wafer diameter is qualified, the traditional solution is to use a micrometer to measure by a measurement operator. However, manual measurement is not only susceptible to human interference, but the measurement results are also easily affected by human factors such as the quality of the measurement personnel, work experience and measurement steps, resulting in low measurement accuracy, large deviation, and time-consuming and labor-intensive. In order to improve the measurement accuracy of the wafer diameter, Chinese patent CN 212645649U discloses a wafer measurement device, which uses the lens of a CCD camera to collect the original contour image of the wafer to be measured in an irradiated state, and obtains the diameter of the wafer to be measured based on the contour data of the contour image. Although the device can reduce the influence of human factors, the measurement device can only measure one wafer at a time and still cannot improve the overall measurement efficiency. Summary of the invention

[0004] The object of the present invention is to provide a wafer diameter batch measurement device and method, which can improve the accuracy and efficiency of wafer diameter measurement.

[0005] To achieve the above-mentioned object, the technical solution adopted by the present invention is as follows: A first aspect of the present invention provides a wafer diameter batch measurement device, comprising a wafer support component and a measurement component; The wafer support assembly comprises a plurality of support seats arranged at intervals, the support seats are used to place the wafer to be tested, and the support seats are arranged toward a first direction; The measuring component includes a light source transmitting module, a signal processing module, and a first mounting member and a second mounting member that are relatively arranged. The light source transmitting module is arranged on the first mounting member, and the signal processing module is arranged on the second mounting member. The light source transmitting module and the support seat are arranged in a one-to-one correspondence. The light source transmitting module is used to transmit a light signal in a second direction, and the second direction is perpendicular to the first direction. The wafer to be measured is located on the light signal transmission path of the light source transmitting module, so that the wafer to be measured blocks the light signal to form a projection on the signal processing module, and the signal processing module is used to obtain the length of the projection.

[0006] In one embodiment, a shielding plate is provided between the first mounting member and the second mounting member, and the shielding plate is used to shield two adjacent light source emitting modules to prevent the light signals of the light source emitting modules from diffusing toward the first direction.

[0007] In one embodiment, the measuring device further comprises a first rotating structure, and the first rotating structure is used to drive the measuring component to rotate.

[0008] In one embodiment, the measuring device further includes a controller, which is electrically connected to the first rotating structure and is used to control the first rotating structure to rotate a preset angle.

[0009] In one embodiment, the wafer support assembly includes a base and a bracket fixed on the base, and the support seat is arranged on the bracket.

[0010] In one embodiment, the first mounting member and the second mounting member are both plate-like structures, and the measuring assembly further comprises a top plate and a bottom plate connecting the first mounting member and the second mounting member, the bottom plate and the top plate are arranged in parallel, and the output end of the first rotating structure is fixedly connected to the top plate.

[0011] In one embodiment, the fixed end of the first rotating structure is fixedly connected to the bracket.

[0012] In one embodiment, a second rotating structure is further included, and the second rotating structure is used to drive the support seat to rotate.

[0013] In one embodiment, a plurality of the support seats are arranged at intervals along the first direction.

[0014] In one embodiment, the signal processing module includes a receiving module and a processing module, the receiving module is used to obtain the projection, and the processing module is used to calculate the length of the projection.

[0015] A second aspect of the present invention provides a wafer diameter batch measurement method, which is applied to the wafer diameter batch measurement device as described above, and the method comprises: Obtaining a projection formed by a light signal emitted by a light source emission module after being blocked by a wafer to be tested; Gets the length of the projection.

[0016] In one embodiment, obtaining a projection of a light signal emitted by a light source emission module after being blocked by the wafer to be tested comprises: Acquire a first projection of a light signal emitted by a light source emission module after being blocked by the wafer to be tested; Rotate the support seat or the measuring component to a preset angle, obtain a second projection of the light signal emitted by the light source emission module after being blocked by the wafer to be measured, and repeat this step multiple times to obtain multiple second projections; The obtaining the length of the projection comprises: Obtaining a length of the first projection and a length of the second projection; Obtaining an average value of the first projection length and the second projection length; Alternatively, obtaining the length of the projection includes: Obtaining a length of the first projection and a length of the second projection; The first projection length and the second projection length are compared to obtain a maximum of the first projection length and the second projection length.

[0017] The wafer diameter batch measurement device provided by the present invention comprises a wafer support assembly and a measurement assembly. The wafer support assembly of the wafer diameter batch measurement device comprises a plurality of support seats arranged at intervals along a first direction. The measurement assembly comprises a light source transmitting module, a signal processing module, and a first mounting member and a second mounting member arranged relatively to each other. The measurement assembly comprises a plurality of light source transmitting modules arranged corresponding to the support seats. The light source transmitting module is used to transmit light signals in a second direction, and the second direction is perpendicular to the first direction. The device can measure a plurality of wafers at one time, thereby improving the wafer diameter measurement efficiency. The wafer to be measured is located on the light signal transmission path of the light source transmitting module. The wafer to be measured blocks the light signal in the second direction to form a projection on the signal processing module of the second mounting member. The signal processing module obtains the length of the projection to obtain the diameter of the wafer to be measured. The measurement device avoids the influence of human factors during the wafer diameter measurement process, thereby improving the measurement accuracy.

[0018] The wafer diameter batch measurement method provided by the present invention is applied to the wafer diameter batch measurement device as described above, and can realize the diameter measurement of multiple wafers at the same time. The method includes obtaining the projection formed by the light signal emitted by the light source emitting module after being blocked by the wafer to be measured, and obtaining the length of the projection. The wafer diameter measurement method can obtain the diameter of the wafer to be measured by obtaining the length of the projection formed by the light signal emitted by the light source emitting module after being blocked by the wafer to be measured, thereby improving the efficiency and accuracy of wafer diameter measurement. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 A schematic structural diagram of a wafer diameter batch measurement device provided by an embodiment of the present invention; Figure 2 A schematic diagram of a projection formed by a wafer to be measured on a second direction optical signal path of a wafer diameter batch measurement device provided by an embodiment of the present invention; Figure 3 A schematic structural diagram of a measuring component and a first rotating structure of a wafer diameter batch measuring device provided by an embodiment of the present invention; Figure 4 A flow chart of a method for batch measuring wafer diameters provided by an embodiment of the present invention; Figure 5 A flow chart of a method for batch measuring wafer diameters provided by an embodiment of the present invention; Figure 6 A flow chart of a method for batch measuring wafer diameters provided in an embodiment of the present invention.

[0021] Among them, the reference numerals in the figure are: 1-wafer support assembly; 2-measurement assembly; 3-wafer; 4-first rotating structure; 11-support seat; 12-base; 13-bracket; 21-light source emission module; 22-first mounting member; 23-second mounting member; 24-shielding plate; 25-top plate; 26-bottom plate; 31-projection. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0024] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0025] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. It should be understood that the term "and / or" used in this article is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0026] In order to measure whether the wafer diameter is qualified, the traditional solution is to use a micrometer to measure the operation by a surveyor. However, manual measurement is not only susceptible to human interference, but also the measurement results are easily affected by human factors such as the quality of the surveyor, work experience and measurement steps, resulting in low measurement accuracy, large deviation, and time-consuming and laborious. In order to improve the measurement accuracy of the wafer diameter, Chinese patent CN 212645649U discloses a wafer measuring device, which collects the original contour image of the wafer to be measured in an irradiated state through the lens of a CCD camera, and obtains the diameter of the wafer to be measured based on the contour data of the contour image. Although the device can reduce the influence of human factors, the measuring device can only detect one wafer at a time and still cannot improve the overall production efficiency. Based on the above problems, the present application provides a wafer diameter batch measurement device and method.

[0027] The wafer diameter batch measurement device and method provided by the present invention are described in detail below in conjunction with specific embodiments.

[0028] Figure 1A schematic diagram of the structure of a wafer diameter batch measurement device provided by an embodiment of the present invention, Figure 2 For a schematic diagram of a projection formed by a wafer to be measured on the second direction optical signal path of the wafer diameter batch measurement device provided by an embodiment of the present invention, please refer to Figure 1 and Figure 2 A first aspect of this embodiment provides a wafer diameter batch measurement device, including a wafer support component 1 and a measurement component 2.

[0029] The wafer support assembly 1 includes a plurality of support seats 11 arranged at intervals, the support seats 11 are used to place the wafer 3 to be measured, and the support seats 11 are arranged in a first direction; the measuring assembly 2 includes a light source transmitting module 21, a signal processing module (not shown in the figure), and a first mounting member 22 and a second mounting member 23 arranged relatively to each other, the light source transmitting module 21 is arranged on the first mounting member 22, the signal processing module is arranged on the second mounting member 23, the light source transmitting module 21 and the support seat 11 are arranged in a one-to-one correspondence, the light source transmitting module 21 is used to transmit a light signal in a second direction, the second direction is perpendicular to the first direction, the wafer 3 to be measured is located on the light signal transmission path of the light source transmitting module 21, so that the wafer 3 to be measured blocks the light signal to form a projection 31 on the signal processing module, and the signal processing module is used to obtain the length of the projection 31.

[0030] The support seat 11 of the present embodiment is used to place the wafer 3 to be tested. A plurality of support seats 11 are arranged in sequence and spaced in the vertical direction. The wafer 3 to be tested is placed horizontally on the support seat 11. The present embodiment does not impose any special restrictions on the specific form of the support seat 11. The support seat 11 of the present embodiment has a bearing surface for placing the wafer 3. The size of the bearing surface of the support seat 11 of the present embodiment for placing the wafer 3 to be tested is smaller than the size of the wafer 3 to be tested. The outer contour of the bearing surface is circular, and the diameter of the bearing surface of the present embodiment is greater than 1 / 2 of the diameter of the wafer. In order to ensure that the wafer 3 can be stably placed when it is placed on the wafer bearing surface of the support seat 11, preferably, the diameter of the bearing surface of the present embodiment is 2 / 3 of the diameter of the wafer 3. Of course, in other embodiments, the diameter of the wafer bearing surface may also be less than 1 / 2 of the diameter of the wafer 3.

[0031] The light source transmitting module 21 of this embodiment is used to transmit a light signal in the second direction, and the light source transmitting module 21 of this embodiment is used to transmit a light signal in the horizontal direction. The light source transmitting module 21 has a light emitting surface of a preset area. In order to ensure that a complete shadow signal of the wafer 3 to be tested is formed on the signal processing module on the second mounting member 23, the size of the light emitting surface of the light source transmitting module 21 is larger than the size of the wafer 3 to be tested. This embodiment does not specifically limit the area of ​​the specific light emitting surface of the light source transmitting module 21. This embodiment does not specifically limit the specific structure of the light source transmitting module 21, and it can be a light source transmitter in the prior art. The size of the light signal receiving surface of the signal processing module of this embodiment is larger than the size of the light emitting surface of the light source transmitting module 21.

[0032] The wafer support assembly 1 of this embodiment includes a plurality of support seats 11 arranged in sequence and at intervals along the vertical direction. The light source transmitting module 21 is used to transmit a light signal in the horizontal direction. The light emitted by the light source transmitting module 21 of this application is parallel light. The length of the projection 31 of the wafer to be measured obtained on the second mounting member 23 is the diameter of the wafer 3 to be measured. The signal processing module of this embodiment is used to obtain the projection 31 and the length of the projection 31. This embodiment does not impose any special restrictions on the structure of the signal processing module. Exemplarily, the signal processing module first obtains the image of the projection 31, and then calculates the length of the projection image by the number of pixels in the length direction of the projection image. The length is the length of the projection 31, that is, the diameter of the wafer 3 to be measured.

[0033] The first mounting member 22 of this embodiment is used to install the light source emission module 21, and the second mounting member 23 is used to install the signal processing module. This embodiment does not specifically limit the specific structures of the first mounting member 22 and the second mounting member 23. Exemplarily, the first mounting member 22 and the second mounting member 23 are both plate-like structures.

[0034] At present, the wafer diameter measurement method is to measure the wafer diameter by measuring personnel by means of a micrometer or optical projection. Relying on manual measurement, it is not only susceptible to human interference, but also the measurement result is easily affected by human factors such as the quality of the measuring personnel, work experience and measurement steps, resulting in low measurement accuracy, large deviation, and time-consuming and laborious. In this embodiment, multiple support seats 11 are arranged in sequence in the vertical direction, so that multiple wafers can be measured simultaneously. The support seat 11 is arranged in a first direction, and the support seat 11 is arranged on the light signal transmission path of the light source transmitting module 21. The light source transmitting module 21 is used to transmit a light signal in a second direction, and the second direction is perpendicular to the first direction. The light signal of the light source transmitting module 21 is blocked by the wafer 3 to be measured, and the signal receiving module obtains the light signal after the wafer 3 to be measured is blocked. In this embodiment, the wafer 3 to be measured is horizontally placed on the support seat 11, and the light source transmitting module 21 emits parallel light in the horizontal direction. The side wall in the thickness direction of the wafer 3 is a light shielding surface, and the length of the projection 31 of the wafer 3 to be measured obtained by the signal processing module on the second mounting member 23 is the diameter of the wafer 3 to be measured. Compared with the existing wafer diameter measurement method, the wafer diameter batch measurement device can avoid the problem of low measurement accuracy caused by human factors affecting the measurement, and at the same time improve the measurement efficiency.

[0035] The wafer diameter batch measurement device of this embodiment includes a wafer support assembly and a measurement assembly. The wafer support assembly 1 includes a plurality of support seats 11 for placing the wafer 3 to be measured, which are arranged at intervals. The support seats 11 are arranged in a first direction. The measurement assembly 2 includes a plurality of light source emission modules 21 arranged in a one-to-one correspondence with the support seats 11. The light source emission module 21 is used to emit light signals in a second direction, and the second direction is perpendicular to the first direction. The device can measure multiple wafers at one time, thereby improving the overall measurement efficiency. After the wafer 3 to be measured is placed on the support seat 11, the wafer 3 to be measured is arranged in the first direction, and the light source emission module 21 emits parallel light in the second direction. The side wall of the wafer 3 to be measured in the thickness direction is a light shielding surface. The length of the projection 31 of the wafer 3 to be measured obtained by the signal processing module on the second mounting member 23 is the diameter of the wafer 3 to be measured. The measurement device avoids the influence of human factors in the process of measuring the wafer diameter and improves the measurement accuracy.

[0036] Figure 3 For a schematic diagram of the structure of the measurement assembly and the first rotating structure of the wafer diameter batch measurement device provided by the embodiment of the present invention, please refer to Figure 1 and Figure 3In a specific embodiment, a shielding plate 24 is provided between the first mounting member 22 and the second mounting member 23, and the shielding plate 24 is used to shield the two adjacent light source emitting modules 21 to prevent the light signals of the light source emitting modules 21 from diffusing toward the first direction. In this embodiment, by providing the shielding plate 24 between the first mounting member 22 and the second mounting member 23, the light emitted by the adjacent light source emitting modules 21 is prevented from interfering with each other, thereby improving the accuracy of the measurement result.

[0037] Furthermore, the measuring device also includes a first rotating structure 4, which is used to drive the measuring component 2 to rotate. When the outer contour of the wafer 3 to be measured is an irregular circle, when the position of the wafer 3 to be measured is fixed, when the relative positions of the light source emitting module 21 and the wafer 3 to be measured are different, the length of the projection of the wafer 3 to be measured may be different, and a plurality of different projections can be obtained by rotating the light source emitting module 21, and the average value of the plurality of different projection lengths can be calculated to obtain the diameter of the wafer 3 to be measured, thereby improving the accuracy of the diameter measurement. Exemplarily, the measuring device of this embodiment is provided with a first rotating structure 4, for example, the first rotating structure is a driving motor, the output end of the driving motor is connected to the measuring component 2, and the driving motor drives the measuring component 2 to rotate (the direction of rotation is shown in FIG. 2 ). Figure 1 The light source emitting module 21 also rotates accordingly. When the outer contour of the wafer 3 to be measured is an irregular circle, the first rotating structure 4 drives the measuring component 2 to rotate multiple times, so that projections 31 of multiple light source emitting modules 21 and different relative positions of the wafer 3 to be measured can be obtained, and the diameter of the wafer is obtained by calculating the average value of the lengths of multiple different projections 31, thereby avoiding the problem of inaccurate measurement caused by the outer contour of the wafer 3 being an irregular circle. Exemplarily, when measuring the wafer 3 to be measured, the first projection of the light signal emitted by the light source emitting module 21 after being blocked by the wafer 3 to be measured is first obtained, and the measuring component 2 is driven by the first rotating structure 4 to rotate a preset angle, and the second projection of the light signal emitted by the light source emitting module 21 after being blocked by the wafer 3 to be measured is obtained, and the measuring component 2 is rotated multiple times to obtain multiple second projections, wherein the average value of the first projection length and the second projection length is used as the diameter of the wafer 3 to be measured. The above-mentioned preset angle can be 15 degrees, 10 degrees or 5 degrees. Exemplarily, taking the preset angle of 15 degrees as an example, after the wafer 3 to be tested is placed on the support base 11, the first projection of the light signal emitted by the light source emitting module 21 after being blocked by the wafer 3 to be tested is obtained, the measuring component 2 is rotated 15 degrees to obtain the second projection of the light signal emitted by the light source emitting module 21 after being blocked by the wafer 3 to be tested, and the measuring component 2 is rotated in the same direction at the preset angle for multiple times to reach 180 degrees to obtain 11 second projections, and the average value of the sum of the lengths of the first projection and the 11 second projections is taken as the diameter of the wafer 3 to be tested.

[0038] See also Figure 1 , Figure 3 The measuring device of this embodiment is provided with a first rotating structure 4. When the outer contour of the wafer 3 to be inspected is an irregular circle, the first rotating structure 4 drives the measuring component 2 to rotate, that is, drives the light source emitting module 21 to rotate (the rotation direction is shown in FIG. Figure 1 The diameter of the wafer 3 to be measured is obtained by calculating the average value of the lengths of the multiple different projections 31, thereby avoiding the problem of inaccurate measurement caused by the outer contour of the wafer 3 being an irregular circle.

[0039] In a specific embodiment, the measuring device further comprises a controller, which is electrically connected to the first rotating structure 4 and is used to control the first rotating structure 4 to rotate by a preset angle. In this embodiment, the automation of the measuring device can be improved by controlling the first rotating structure 4 to rotate by the controller.

[0040] Optionally, the wafer diameter batch measurement device also includes a second rotating structure, which is used to drive the support seat 11 to rotate. When the outer contour of the wafer 3 to be measured is an irregular circle, the support seat 11 can be driven to rotate multiple times by the second rotating structure to obtain the projection of the wafer 3 to be measured at multiple different relative positions with the light source emission module 21, and the signal processing module obtains the length of the projection 31 at multiple different relative positions, and selects the average value of the multiple lengths as the diameter of the wafer 3. Among them, the second rotating structure can be a driving motor. The principle of setting the second rotating structure in this embodiment is the same as the principle of setting the first rotating structure mentioned above, and will not be repeated here.

[0041] See also Figure 1 and Figure 3 In a specific embodiment, the wafer support assembly 1 further comprises a base 12 and a bracket 13 fixed on the base 12, and the support seat 11 is arranged on the bracket 13. The wafer support assembly of this embodiment comprises a base 12 and a bracket 13 fixed on the base 12, and the support seat 11 is arranged on the bracket 13 to facilitate the overall movement of the wafer support assembly 1.

[0042] Furthermore, the measuring assembly 2 also includes a top plate 25 and a bottom plate 26 connecting the first mounting member 22 and the second mounting member 23, and the output end of the first rotating structure 4 is fixedly connected to the top plate 25. In this embodiment, the first mounting member 22 and the second mounting member 23 are connected by the bottom plate 26 and the top plate 25 to facilitate the overall movement of the measuring assembly 2. The fixed end of the first rotating structure 4 of the measuring assembly 2 of this embodiment is fixedly connected to the bracket 13 of the wafer support assembly 1, and the measuring assembly 2 of this embodiment is connected to the wafer support assembly 1. When the base 12 of the wafer support assembly 1 is moved, the wafer support assembly 1 and the measuring assembly 2 move simultaneously, thereby realizing an overall mobile wafer diameter batch measurement device.

[0043] Preferably, the number of the support seats 11 of this embodiment is greater than 4. The number of the support seats 11 of this embodiment is greater than 4, and the wafer diameter batch measurement device of this embodiment can measure the diameters of at least four wafers 3 at the same time. The multiple support seats 11 of this embodiment are evenly spaced along the first direction, and the multiple support seats 11 are located on the same straight line, which reduces the occupied space of the wafer diameter batch measurement device.

[0044] In the above embodiment, the signal processing module includes a receiving module and a processing module, the receiving module is used to obtain the projection, and the processing module is used to calculate the length of the projection. Exemplarily, the receiving module receives the projected image, and the processing module calculates the length of the projected image by the number of pixels in the length direction of the projected image, which is the length of the projection, that is, the diameter of the wafer to be measured. The receiving module and the processing module of this embodiment are both prior art, and are not described in detail in this embodiment.

[0045] The wafer diameter batch measurement device of the embodiment of the present invention includes a wafer support assembly and a measurement assembly. The wafer support assembly 1 includes a plurality of support seats 11 for placing the wafer 3 to be measured, which are arranged at intervals. The support seats 11 are arranged in a first direction. The measurement assembly 2 includes a plurality of light source emission modules 21 arranged in a one-to-one correspondence with the support seats 11. The light source emission module 21 is used to emit a light signal in a second direction, and the second direction is perpendicular to the first direction. The device can measure multiple wafers at one time, thereby improving the overall measurement efficiency. After the wafer 3 to be measured is placed on the support seat 11, the wafer 3 to be measured is arranged in the first direction, and the light source emission module 21 emits parallel light in the second direction. The side wall of the wafer 3 to be measured in the thickness direction is a light shielding surface. The length of the projection 31 of the wafer 3 to be measured obtained by the signal processing module on the second mounting member 23 is the diameter of the wafer 3 to be measured. The measuring device avoids the influence of human factors in the process of measuring the wafer diameter and improves the measurement accuracy.

[0046] A second aspect of the present embodiment provides a wafer diameter measurement method, which is applied to the wafer diameter batch measurement device as described in the above embodiment, for example: the wafer diameter batch measurement device includes a wafer support assembly 1 and a measurement assembly 2; the wafer support assembly 1 includes a plurality of support seats 11 arranged at intervals, the support seats 11 are used to place the wafer 3 to be measured, and the support seats 11 are arranged toward a first direction; the measurement assembly 2 includes a light source emission module 21, a signal processing module, and a first mounting member 22 and a second mounting member 23 arranged relatively, the light source emission module 21 is arranged on the first mounting member 22, the signal processing module is arranged on the second mounting member 23, the light source emission module 21 and the support seat 11 are arranged in a one-to-one correspondence, the light source emission module 21 is used to emit a light signal toward a second direction, the second direction is perpendicular to the first direction, the wafer 3 to be measured is located on the light signal emission path of the light source emission module 21, so that the wafer 3 to be measured blocks the light signal to form a projection 31 on the signal processing module, and the signal processing module is used to obtain the length of the projection 31.

[0047] Figure 4 For a flow chart of a wafer diameter batch measurement method provided by an embodiment of the present invention, please refer to Figure 4 As shown, the measurement method includes: S101, obtaining a projection formed by a light signal emitted by a light source emission module after being blocked by the wafer to be tested; Specifically, multiple wafers 3 to be tested are placed horizontally on corresponding support seats 11, and each light source emitting module 21 emits a light signal in a horizontal direction. The wafer 3 to be tested blocks the light signal to form a projection on the signal processing module. The signal processing module obtains an image of the projection 31 formed after the light signal emitted by the light source emitting module 21 is blocked by the wafer 3 to be tested.

[0048] S102: Obtain the length of the projection.

[0049] Specifically, the signal processing module calculates the length of the projection image according to the number of pixels of the image of the projection 31 in the length direction, and the length is the length of the projection image, that is, the diameter of the wafer 3 to be measured.

[0050] The wafer diameter batch measurement method provided by the embodiment of the present invention is applied to the wafer diameter batch measurement device as described above, and the method comprises obtaining a projection formed by the light signal emitted by the light source emission module after being blocked by the wafer to be measured; and obtaining the length of the projection. The wafer diameter measurement method can obtain the diameter of the wafer to be measured by obtaining the length of the projection formed by the light signal emitted by the light source emission module after being blocked by the wafer to be measured, thereby improving the efficiency and accuracy of wafer diameter measurement.

[0051] Figure 5For a flow chart of a wafer diameter batch measurement method provided by an embodiment of the present invention, please refer to Figure 5 As shown, further, the step of obtaining a projection of the light signal emitted by the light source emission module after being blocked by the wafer to be tested includes: S1011, obtaining a first projection of a light signal emitted by a light source emission module after being blocked by the wafer to be tested; S1012, rotating the support base or the measuring component to a preset angle, obtaining a second projection of the light signal emitted by the light source emitting module after being blocked by the wafer to be measured, and repeating this step multiple times to obtain multiple second projections.

[0052] The obtaining the length of the projection comprises: S1021. Obtain a length of the first projection and a length of the second projection; S1022. Obtain an average value of the first projection length and the second projection length.

[0053] In this embodiment, the diameter of the wafer 3 to be measured is obtained by calculating the average value of the lengths of a plurality of different projections 31 , thereby avoiding the problem of inaccurate measurement caused by the outer contour of the wafer 3 being an irregular circle.

[0054] Figure 6 For a flow chart of a wafer diameter batch measurement method provided by an embodiment of the present invention, please refer to Figure 6 As shown, obtaining the length of the projection includes: S1021′, obtaining a length of the first projection and a length of the second projection; S1022′: Compare the first projection length and the second projection length to obtain the maximum of the first projection length and the second projection length.

[0055] See also Figure 1, the relative position relationship between the wafer 3 to be tested and the light source emitting module 21 can be changed by rotating the support seat 11 or the measuring component 2. Exemplarily, when the outer contour of the wafer to be tested is an irregular circle, when the relative positions of the wafer 3 to be tested and the light source emitting module 21 are different, the length of its projection 31 may be different. For example, when the outer contour of the wafer 3 to be tested is an irregular circle, the corresponding positions of the light source emitting module 21 and the support seat 11 after the wafer 3 to be tested is placed on the support seat 11 are taken as the reference (i.e., 0 degrees). When the wafer 3 to be tested or the light source emitting module 21 is rotated by a certain angle, the length of the projection 31 may change, that is, the measured diameter of the wafer 3 to be tested may change. Theoretically, since there are countless relative position relationships between the light source emitting module 21 and the wafer 3 to be tested, countless projections 31 can be obtained. In this embodiment, the average value of the lengths of the multiple projections 31 obtained after rotating the wafer 3 to be tested or the light source transmitting module 21 for multiple times can be used as the diameter of the wafer 3 to be tested, or the maximum value of the lengths of the multiple projections 31 obtained after rotating the wafer 3 to be tested or the light source transmitting module 21 for multiple times can be used as the diameter of the wafer 3 to be tested. The above-mentioned preset angle takes 15 degrees as an example. After the wafer 3 to be tested is placed on the support seat 11, the first projection of the light signal emitted by the light source transmitting module 21 after being blocked by the wafer 3 to be tested is obtained, and the measuring component 2 is rotated 15 degrees to obtain the second projection of the light signal emitted by the light source transmitting module 21 after being blocked by the wafer 3 to be tested. After the measuring component 2 is rotated in the same direction at the preset angle for multiple times to reach 180 degrees, 11 second projections are obtained, and the average value of the sum of the lengths of the 11 second projections and the length of the first projection is used as the diameter of the wafer 3 to be tested. Alternatively, the length of the first projection is compared with the lengths of the 11 second projections, and the one with the largest length among the first projection and the 11 second projections is used as the diameter of the wafer 3 to be tested.

[0056] The measuring device of this embodiment obtains the length of the first projection and the length of the second projection through a signal processing module. Exemplarily, the signal processing module obtains the image of the first projection and the image of the second projection, and then obtains the length of the first projection image and the length of the second projection image through the number of pixels of the first projection image and the second projection image in the length direction, wherein the length of the first projection image is the length of the first projection, and the length of the second projection image is the length of the second projection.

[0057] In the above description, the description with reference to the terms "an embodiment", "some embodiments", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0058] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may still be modified, or some or all of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wafer diameter batch measurement device, characterized in that: including a wafer support assembly and a measurement assembly; The wafer support assembly comprises a plurality of support seats arranged at intervals, the support seats are used to place the wafer to be tested, and the support seats are arranged toward a first direction; The measuring component includes a light source transmitting module, a signal processing module, and a first mounting member and a second mounting member that are relatively arranged. The light source transmitting module is arranged on the first mounting member, and the signal processing module is arranged on the second mounting member. The light source transmitting module and the support seat are arranged in a one-to-one correspondence. The light source transmitting module is used to transmit a light signal toward a second direction, and the second direction is perpendicular to the first direction. The wafer to be measured is located on the light signal transmission path of the light source transmitting module, so that the wafer to be measured blocks the light signal to form a projection on the signal processing module, and the signal processing module is used to obtain the length of the projection.

2. The wafer diameter batch measuring device according to claim 1, characterized in that: A shielding plate is disposed between the first mounting member and the second mounting member, and the shielding plate is used to shield two adjacent light source emitting modules to prevent the light signals of the light source emitting modules from diffusing toward the first direction.

3. The wafer diameter batch measuring device according to claim 1, characterized in that: The measuring device further comprises a first rotating structure, and the first rotating structure is used for driving the measuring component to rotate.

4. The wafer diameter batch measuring device according to claim 3, characterized in that: The measuring device further includes a controller, which is electrically connected to the first rotating structure and is used to control the first rotating structure to rotate a preset angle.

5. The wafer diameter batch measuring device according to claim 4, characterized in that: The wafer support assembly comprises a base and a bracket fixed on the base, and the support seat is arranged on the bracket.

6. The wafer diameter batch measuring device according to claim 5, characterized in that: The first mounting member and the second mounting member are both plate-shaped structures. The measuring assembly also includes a top plate and a bottom plate connecting the first mounting member and the second mounting member. The bottom plate and the top plate are arranged in parallel. The output end of the first rotating structure is fixedly connected to the top plate.

7. The wafer diameter batch measuring device according to claim 6, characterized in that: The fixed end of the first rotating structure is fixedly connected to the bracket.

8. The wafer diameter batch measuring device according to claim 1, characterized in that: It also includes a second rotating structure, and the second rotating structure is used to drive the support seat to rotate.

9. The wafer diameter batch measuring device according to claim 1, characterized in that: The plurality of support seats are arranged at intervals along the first direction.

10. The wafer diameter batch measuring device according to any one of claims 1 to 9, characterized in that: The signal processing module includes a receiving module and a processing module, the receiving module is used to obtain the projection, and the processing module is used to calculate the length of the projection.

11. A wafer diameter batch measurement method, applied to the wafer diameter batch measurement device according to any one of claims 1 to 10, characterized in that: The method comprises: Obtaining a projection formed by a light signal emitted by a light source emission module after being blocked by a wafer to be tested; Gets the length of the projection.

12. The wafer diameter batch measurement method according to claim 11, characterized in that: The step of obtaining a projection of a light signal emitted by a light source emission module after being blocked by the wafer to be tested comprises: Acquire a first projection of a light signal emitted by a light source emission module after being blocked by the wafer to be tested; Rotate the support seat or the measuring component to a preset angle, obtain a second projection of the light signal emitted by the light source emission module after being blocked by the wafer to be measured, and repeat this step multiple times to obtain multiple second projections; The obtaining the length of the projection comprises: Obtaining a length of the first projection and a length of the second projection; Obtaining an average value of the first projection length and the second projection length; Alternatively, obtaining the length of the projection includes: Obtaining a length of the first projection and a length of the second projection; The first projection length and the second projection length are compared to obtain a maximum of the first projection length and the second projection length.

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