A method for preparing thick film resistor based on TGV process

Abstract

The present invention discloses a method for preparing a thick film resistor based on a TGV process, and relates to the field of integrated circuits. The method comprises: exposing the positions of the thick film resistor cavity and the conductor grooves to be printed on the initial substrate to obtain a first substrate, baking the first substrate and then performing a first anisotropic wet etching to obtain a second substrate; laser drilling the second substrate and performing a second anisotropic wet etching to obtain a third substrate, and metal filling the third substrate; printing the thick film resistor on a transfer substrate and performing a flexible transfer printing; depositing an aluminum nitride passivation layer on the surface of the third substrate; high-temperature sintering the third substrate; after sintering, photolithographically opening windows on the aluminum nitride passivation layer at the surface pad position to deposit the surface pad. The present invention can reduce the delay time and transmission loss of electrical signals, while avoiding the deviation of the resistance value when printing thick film resistors on double-sided ceramic substrates, thereby reducing time and money costs.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuits, and in particular to a method for preparing a thick film resistor based on a TGV process. Background Art

[0002] In the thin-thick film hybrid integration technology, resistors are divided into thin film resistors and thick film resistors. Among them, thin film resistors are made by magnetron sputtering, vacuum evaporation and other process methods; while thick film resistors are printed on aluminum oxide / aluminum nitride / beryllium oxide ceramic substrates by screen printing, which also leads to a larger volume of thick film resistors. The structure of thick film resistors is relatively simple, more stable and reliable, and has a longer service life. In addition, thick film resistors can usually withstand higher voltages, which makes them suitable for high voltage circuits.

[0003] However, thick film resistors rely on the contact between particles in the glass matrix to form resistance. The contacts formed in these contacts constitute the complete resistor, but the thermal strain during operation will interrupt the contact. Since thick film resistors are connected in parallel in most cases, they will not open circuit, but the resistance will continue to increase with time and temperature. This limits the application of thick film resistors in some applications where size and weight are strictly required.

[0004] In view of the defects existing in the above-mentioned existing processes, it is necessary to propose a new thick film resistor preparation process so that the thick film resistor can withstand higher voltages, have the advantages of stable and reliable operation and long life, and then be applied to more electronic equipment working scenarios. Summary of the invention

[0005] In view of this, an embodiment of the present invention provides a method for preparing thick film resistors based on the TGV process, so as to solve the problem that the current thick film resistors rely on the contact between particles in the glass matrix to form resistance, which limits the application of thick film resistors in some applications with strict requirements on size and weight.

[0006] According to a first aspect, an embodiment of the present invention provides a method for preparing a thick film resistor based on a TGV process, the method comprising: A mask is used to expose the initial substrate where the thick film resistor cavity and the conductor groove need to be printed, so as to obtain a first substrate with the thick film resistor cavity and the conductor groove remaining therein, and the first substrate is baked and then subjected to a first anisotropic wet etching to obtain a second substrate; the initial substrate is a photosensitive glass substrate; The second substrate is laser-drilled, and the drilled crystallized area formed by the laser drilling is subjected to a second anisotropic wet etching to obtain a third substrate, and the laser through-holes and the conductor grooves formed on the third substrate are metal-filled; Printing the thick film resistor on the transfer substrate by screen printing, attaching the transfer substrate upside down in the thick film resistor cavity of the third substrate and performing flexible transfer printing; Depositing an aluminum nitride passivation layer of a preset thickness on the surface of the third substrate by magnetron sputtering; Sintering the third substrate at high temperature after the aluminum nitride passivation layer is deposited; After sintering is completed, the aluminum nitride passivation layer is photolithographically opened at the surface pad position, and the surface pad is deposited by magnetron sputtering to finally complete the preparation of the thick film resistor.

[0007] In combination with the first aspect, in the first implementation of the first aspect, a 5% HF solution is selected as the etching solution in the first anisotropic wet etching, and a 10% HF solution is selected as the etching solution in the second anisotropic wet etching.

[0008] In combination with the first aspect, in a second implementation of the first aspect, the transfer substrate is made of polydimethylsiloxane.

[0009] In combination with the first aspect, in a third embodiment of the first aspect, the magnetron sputtering is reactive magnetron sputtering, using an Al target material with a purity of 5N, nitrogen as a reaction gas, and argon as a carrier gas for sputtering.

[0010] In combination with the first embodiment of the first aspect, in a fourth embodiment of the first aspect, the metal filling is performed using copper material.

[0011] In combination with the first aspect, in a fifth implementation of the first aspect, the baking is continuous temperature rising baking.

[0012] In combination with the fifth embodiment of the first aspect, in the sixth embodiment of the first aspect, the continuous temperature rise baking is to place the first substrate in a precision oven at 495° C. for a first baking for 1 hour, and then heat the temperature to 590° C. for a second baking for 1 hour.

[0013] In combination with the first aspect, in the seventh implementation of the first aspect, the laser drilling parameters are 30W power and 40% duty cycle, and the aperture range of the laser drilling is 50 um.

[0014] In combination with the first aspect, in an eighth implementation of the first aspect, the surface pad is made of one of copper, nickel, and gold, or a combination of any multiple materials.

[0015] In combination with the eighth embodiment of the first aspect, in the first nineteenth embodiment of the first aspect, the surface pad is a copper, nickel and gold composite material pad, and the copper layer thickness of the surface pad is 50 nm, the nickel layer thickness is 55 nm, and the gold layer thickness is 60 nm.

[0016] The thick film resistor preparation method based on the TGV process of the present invention utilizes the advantages of photosensitive glass being compatible with the TGV process, and the initial substrate prepared based on the photosensitive glass has the characteristics of controllable thermal expansion coefficient and electrical properties, so that a double-sided thick film resistor network can be printed in the cavities on both sides of the initial substrate, and the photosensitive glass is used to prepare the TGV as a vertical connection channel of the thick film resistor network. In order to suppress phase separation during the sintering process of the thick film resistor, an AlN passivation layer is deposited on the surface of the thick film resistor network. At high temperatures, the dielectric constant and loss tangent of the AlN material and the glass are low, which can reduce the delay time and transmission loss of the electrical signal. At the same time, it avoids the deviation of the resistance value when printing the thick film resistor on the double-sided ceramic substrate, reduces the time cost and money cost, and provides a new preparation method for the preparation of the thick film resistor network in 2.5D / 3D packaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] in: Figure 1 A schematic diagram of the process of preparing a thick film resistor based on the TGV process provided by the present invention is shown; Figure 2 The structure of the thick film resistor prepared in the thick film resistor preparation method based on the TGV process provided by the present invention is shown.

[0019] In the attached drawings, 1 is photosensitive glass, 2 is TGV through hole, 3 is thick film resistor, 4 is surface conductor layer, 5 is surface pad, and 6 is AlN passivation layer. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0021] Thin and thick film hybrid integration technology is a high-end packaging technology that directly assembles and packages zero-level packaging into 1-3 level packaging modules or systems to meet the requirements of aviation, aerospace, electronics and special equipment for small product size, light weight, strong functionality, high reliability, wide frequency, high precision and good stability.

[0022] In the thin-thick film hybrid integration technology, resistors are divided into thin film resistors and thick film resistors. Among them, thin film resistors are made by magnetron sputtering, vacuum evaporation and other process methods; while thick film resistors are printed on aluminum oxide / aluminum nitride / beryllium oxide ceramic substrates by screen printing, which also leads to a larger volume of thick film resistors. The structure of thick film resistors is relatively simple, more stable and reliable, and has a longer service life. In addition, thick film resistors can usually withstand higher voltages, which makes them suitable for high voltage circuits.

[0023] However, thick film resistors rely on the contact between particles in the glass matrix to form resistance. The contacts formed in these contacts constitute the complete resistor, but the thermal strain during operation will interrupt the contact. Since thick film resistors are connected in parallel in most cases, they will not open circuit, but the resistance will continue to increase with time and temperature. This limits the application of thick film resistors in some applications where size and weight are strictly required.

[0024] Taking into account the defects of the existing thick film resistor preparation process, it is necessary to explore a new thick film resistor preparation process so that the thick film resistor can withstand higher voltages and have the advantages of stable, reliable operation and long life, and then be applied to more electronic equipment working scenarios.

[0025] In order to solve the above problems, a method for preparing a thick film resistor based on a TGV process is provided in this embodiment, aiming to: Figure 1 FIG. 1 is a flow chart of a method for preparing a thick film resistor based on a TGV process according to an embodiment of the present invention. Figure 1 As shown, the method comprises the following steps: See also Figure 1 , Figure 1 Material ① is photosensitive glass, material ② is copper, material ③ is thick film resistor transfer drying film, material ④ is AlN passivation layer, material ⑤ is sintered thick film resistor, and material ⑥ is surface pad.

[0026] In this embodiment, the surface pad is made of one of Cu, Ni, and Au or a combination of any multiple materials, and the surface conductor layer is made of Cu material.

[0027] S101, such as Figure 1 As shown in process 1 and process 2, a mask is used to expose the initial substrate where thick film resistor cavities and conductor grooves need to be printed, to obtain a first substrate with thick film resistor cavities and conductor grooves. The first substrate is baked and then subjected to a first anisotropic wet etching to obtain a second substrate.

[0028] Step S101 is used to prepare a thick film resistor cavity and a conductor groove. Process 1 is the exposure process in step S101, and a first substrate can be prepared after the exposure process; process 2 is the baking and first anisotropic wet etching process in step S101, and a second substrate can be prepared after the baking and first anisotropic wet etching process.

[0029] In this embodiment, the initial substrate is made of photosensitive glass material, that is, the initial substrate is a photosensitive glass substrate.

[0030] S102, such as Figure 1 As shown in process 3, after the cavity is manufactured, the second substrate is laser-drilled using a picosecond laser system, and the perforated crystallized area formed by the laser drilling is subjected to a second anisotropic wet etching to obtain a third substrate, and the laser through-holes and conductor grooves formed on the third substrate are filled with metal.

[0031] With the development of semiconductor packaging technology, through glass via (TGV) technology is used to drill holes in glass and electroplated metal copper pillars to connect the upper and lower metal lines of the substrate. TGV technology can realize the conversion of two-dimensional circuits to three-dimensional circuit integration. Glass substrates can be produced in larger sizes than silicon and ceramic substrates, with a variety of thickness options. Compared with silicon, which requires polishing and has size restrictions, it can be produced at a lower cost. The thermal expansion coefficient and electrical properties of the glass can be controlled by the composition of the glass, and because the dielectric constant and loss tangent of the glass are low, the delay time and transmission loss of the electrical signal can be reduced.

[0032] Step S102 is used to prepare the TGV substrate laser through hole and conductor filling. In this embodiment, copper (Cu) is used for conductor filling, so that the third substrate can be formed as follows: Figure 2 The surface conductor layer 4.

[0033] The etching solution in the first anisotropic wet etching is a 5% HF solution, and the etching solution in the second anisotropic wet etching is a 10% HF solution.

[0034] S103, such as Figure 1 As shown in process 3 and process 4, the thick film resistor is printed on the transfer substrate by screen printing, and then the transfer substrate is inverted and attached to the thick film resistor cavity of the third substrate and flexibly transferred.

[0035] Step S103 is used to perform flexible transfer of the thick film resistor. In this embodiment, the transfer substrate is a substrate made of polydimethylsiloxane (PDMS).

[0036] S104, such as Figure 1 As shown in process 5, an aluminum nitride (AlN) passivation layer of a preset thickness is deposited on the surface of the third substrate by magnetron sputtering. The magnetron sputtering is a reactive magnetron sputtering, using a 5N purity Al target, nitrogen as a reaction gas, and argon as a carrier gas for sputtering; Step S104 is used to deposit an AlN passivation layer.

[0037] S105, such as Figure 1 As shown in process 6, the third substrate after the AlN passivation layer is deposited is subjected to high temperature sintering.

[0038] Step S105 is used to sinter the thick film resistor.

[0039] S106, such as Figure 1 As shown in process 7, after sintering is completed, the AlN passivation layer is photolithographically opened at the surface pad position, and then the surface pad is deposited by magnetron sputtering to finally complete the preparation of the thick film resistor.

[0040] Step S106 is used to perform AlN passivation layer photolithography and surface pad fabrication.

[0041] The thick film resistor preparation method based on the TGV process of the present invention utilizes the advantages of photosensitive glass being compatible with the TGV process, and the initial substrate prepared based on the photosensitive glass has the characteristics of controllable thermal expansion coefficient and electrical properties, so that a double-sided thick film resistor network can be printed in the cavities on both sides of the initial substrate, and the photosensitive glass is used to prepare the TGV as a vertical connection channel of the thick film resistor network. In order to suppress phase separation during the sintering process of the thick film resistor, an AlN passivation layer is deposited on the surface of the thick film resistor network. At high temperatures, the dielectric constant and loss tangent of the AlN material and the glass are low, which can reduce the delay time and transmission loss of the electrical signal. At the same time, it avoids the deviation of the resistance value when printing the thick film resistor on the double-sided ceramic substrate, reduces the time cost and money cost, and provides a new preparation method for the preparation of the thick film resistor network in 2.5D / 3D packaging.

[0042] Example 1 S201. Expose the initial substrate at the locations where thick film resistor cavities and conductor grooves need to be printed using a mask under 312 nm ultraviolet light to obtain a first substrate with thick film resistor cavities and conductor grooves remaining thereon, bake the first substrate, and then perform a first anisotropic wet etching to obtain a second substrate.

[0043] Step S201 is used to prepare a thick film resistor cavity and a conductor groove. After exposure, a first substrate can be prepared; after baking and a first anisotropic wet etching process, a second substrate can be prepared.

[0044] By exposing under specific parameter conditions, the exposure efficiency and exposure effect can be improved.

[0045] S202, after the cavity is manufactured, the second substrate is laser-drilled by using a picosecond laser system, and the perforated crystallized area formed by the laser drilling is subjected to a second anisotropic wet etching to obtain a third substrate, and the laser through-holes and conductor grooves formed on the third substrate are filled with metal.

[0046] S203, printing the thick film resistor on the transfer substrate by screen printing, and then inverting the transfer substrate and attaching it to the thick film resistor cavity of the third substrate and performing flexible transfer.

[0047] Step S203 is used to perform flexible transfer of the thick film resistor. In this embodiment, the transfer substrate is a substrate made of PDMS.

[0048] S204, depositing an aluminum nitride (AlN) passivation layer of a preset thickness on the surface of the third substrate by magnetron sputtering. The magnetron sputtering is reactive magnetron sputtering, using a 5N purity Al target, nitrogen as a reaction gas, and argon as a carrier gas for sputtering.

[0049] Step S204 is used to deposit an AlN passivation layer. In this embodiment, the preset thickness is 150-200 nm, for example, the preset thickness is set to 180 nm.

[0050] S205, sintering the third substrate at high temperature after the AlN passivation layer is deposited.

[0051] Step S205 is used to sinter the thick film resistor.

[0052] S206. After sintering is completed, the AlN passivation layer is photolithographically opened at the surface pad position, and then the surface pad is deposited by magnetron sputtering to finally complete the preparation of the thick film resistor.

[0053] Step S206 is used to perform AlN passivation layer photolithography and surface pad fabrication.

[0054] Example 2 S301, using a mask template to expose the initial substrate where thick film resistor cavities and conductor grooves need to be printed to obtain a first substrate with thick film resistor cavities and conductor grooves, and then performing a first anisotropic wet etching on the first substrate after continuously heating and baking to obtain a second substrate.

[0055] Step S301 is used to prepare thick film resistor cavities and conductor grooves. Among them, the first substrate can be prepared after exposure treatment; the second substrate can be prepared after baking and the first anisotropic wet etching treatment. The continuous temperature rise baking in step S301 includes multiple consecutive baking processes, and the temperature parameters of each baking are increased relative to the previous baking. For example, if two consecutive temperature rise baking processes are adopted, the photosensitive glass is placed in a precision oven for baking at 495°C for 1 hour after exposure, and then the precision oven is heated to 590°C for a second baking for 1 hour.

[0056] In this embodiment, the initial substrate is made of photosensitive glass material, that is, the initial substrate is a photosensitive glass substrate.

[0057] S302, after the cavity is manufactured, the second substrate is laser-drilled by a picosecond laser system, and the perforated crystallized area formed by the laser drilling is subjected to a second anisotropic wet etching to obtain a third substrate, and the laser through-holes and conductor grooves formed on the third substrate are filled with metal.

[0058] S303 , printing the thick film resistor on the transfer substrate by screen printing, and then inverting the transfer substrate and attaching it to the thick film resistor cavity of the third substrate and performing flexible transfer.

[0059] Step S103 is used to perform flexible transfer of the thick film resistor. In this embodiment, the transfer substrate is a substrate made of PDMS.

[0060] S304, depositing an aluminum nitride (AlN) passivation layer of a preset thickness on the surface of the third substrate by magnetron sputtering. The magnetron sputtering is reactive magnetron sputtering, using a 5N purity Al target, nitrogen as a reaction gas, and argon as a carrier gas for sputtering; Step S304 is used to deposit an AlN passivation layer.

[0061] S305 , sintering the third substrate at high temperature after the AlN passivation layer is deposited.

[0062] Step S105 is used to sinter the thick film resistor.

[0063] S306, after sintering is completed, the AlN passivation layer is photolithographically opened at the surface pad position, and then the surface pad is deposited by magnetron sputtering to finally complete the preparation of the thick film resistor.

[0064] Step S306 is used to perform AlN passivation layer photolithography and surface pad fabrication.

[0065] Example 3 S401, using a mask template to expose the initial substrate where thick film resistor cavities and conductor grooves need to be printed to obtain a first substrate with thick film resistor cavities and conductor grooves, baking the first substrate and then performing a first anisotropic wet etching to obtain a second substrate.

[0066] Step S401 is used to prepare a thick film resistor cavity and a conductor groove. After exposure, a first substrate can be prepared; after baking and a first anisotropic wet etching process, a second substrate can be prepared.

[0067] S402. After the cavity is manufactured, a picosecond laser system is used to perform laser drilling on the second substrate. The laser drilling parameters are 30W power and 40% duty cycle. The aperture range of the laser drilling is 50 um. A second anisotropic wet etching is performed on the punched crystallized area formed by the laser drilling to obtain a third substrate. The laser through holes and conductor grooves formed on the third substrate are filled with metal.

[0068] By drilling the TGV under specific parameters, it can be ensured that the through holes on the TGV achieve the expected effect.

[0069] S403, printing the thick film resistor on the transfer substrate by screen printing, and then inverting the transfer substrate and attaching it to the thick film resistor cavity of the third substrate and performing flexible transfer.

[0070] Step S403 is used to perform flexible transfer of the thick film resistor. In this embodiment, the transfer substrate is a substrate made of PDMS.

[0071] S404, depositing an aluminum nitride (AlN) passivation layer of a preset thickness on the surface of the third substrate by magnetron sputtering. The magnetron sputtering is reactive magnetron sputtering, using a 5N purity Al target, nitrogen as a reaction gas, and argon as a carrier gas for sputtering. Step S204 is used to deposit an AlN passivation layer.

[0072] S405, sintering the third substrate at high temperature after the AlN passivation layer is deposited.

[0073] Step S405 is used to sinter the thick film resistor.

[0074] S406, after sintering is completed, the AlN passivation layer is photolithographically opened at the surface pad position, and then the surface pad is deposited by magnetron sputtering to finally complete the preparation of the thick film resistor.

[0075] Step S406 is used to perform AlN passivation layer photolithography and surface pad fabrication.

[0076] Example 4 S501, using a mask template to expose the initial substrate where thick film resistor cavities and conductor grooves need to be printed to obtain a first substrate with thick film resistor cavities and conductor grooves, baking the first substrate and then performing a first anisotropic wet etching to obtain a second substrate.

[0077] Step S501 is used to prepare a thick film resistor cavity and a conductor groove. After exposure, a first substrate can be prepared; after baking and a first anisotropic wet etching process, a second substrate can be prepared.

[0078] S502, after the cavity is manufactured, the second substrate is laser-drilled by using a picosecond laser system, and the perforated crystallized area formed by the laser drilling is subjected to a second anisotropic wet etching to obtain a third substrate, and the laser through-holes and conductor grooves formed on the third substrate are filled with metal.

[0079] S503 , printing the thick film resistor on the transfer substrate by screen printing, and then inverting the transfer substrate and attaching it to the thick film resistor cavity of the third substrate and performing flexible transfer.

[0080] Specifically, in this embodiment, the transfer substrate is placed in a drying oven at 250° C. for 8 minutes to dry the thick film resistor, and then the flexible transfer of the thick film resistor is completed.

[0081] S504, depositing an aluminum nitride (AlN) passivation layer of a preset thickness on the surface of the third substrate by magnetron sputtering. The magnetron sputtering is reactive magnetron sputtering, using a 5N purity Al target, nitrogen as a reaction gas, and argon as a carrier gas for sputtering.

[0082] Step S504 is used to deposit an AlN passivation layer.

[0083] S505 , sintering the third substrate at high temperature after the AlN passivation layer is deposited.

[0084] Step S505 is used to sinter the thick film resistor.

[0085] S506, after sintering is completed, the AlN passivation layer is photolithographically opened at the surface pad position, and then the surface pad is deposited by magnetron sputtering to finally complete the preparation of the thick film resistor.

[0086] Step S506 is used to perform AlN passivation layer photolithography and surface pad fabrication.

[0087] Example 5 S601, using a mask template to expose the initial substrate where thick film resistor cavities and conductor grooves need to be printed to obtain a first substrate with thick film resistor cavities and conductor grooves, baking the first substrate and then performing a first anisotropic wet etching to obtain a second substrate.

[0088] Step S601 is used to prepare a thick film resistor cavity and a conductor groove. After exposure, a first substrate can be prepared; after baking and a first anisotropic wet etching process, a second substrate can be prepared.

[0089] S602: After the cavity is manufactured, the second substrate is laser-drilled by a picosecond laser system, and the perforated crystallized area formed by the laser drilling is subjected to a second anisotropic wet etching to obtain a third substrate, and the laser through-holes and conductor grooves formed on the third substrate are filled with metal.

[0090] S603 , printing the thick film resistor on the transfer substrate by screen printing, and then inverting the transfer substrate and attaching it to the thick film resistor cavity of the third substrate and performing flexible transfer.

[0091] S604, depositing an aluminum nitride (AlN) passivation layer of a preset thickness on the surface of the third substrate by magnetron sputtering. The magnetron sputtering is reactive magnetron sputtering, using a 5N purity Al target, nitrogen as a reaction gas, and argon as a carrier gas for sputtering.

[0092] Step S604 is used to deposit an AlN passivation layer.

[0093] S605, sintering the third substrate after the AlN passivation layer is deposited at high temperature. In this embodiment, the AlN sharpening layer is fully sintered by sintering at 850-860° C. in a nitrogen environment for 10-12 min.

[0094] S5606. After sintering is completed, the AlN passivation layer is photolithographically opened at the surface pad position, and then the surface pad is deposited by magnetron sputtering to finally complete the preparation of the thick film resistor.

[0095] Step S606 is used to perform AlN passivation layer photolithography and surface pad fabrication.

[0096] Example 6 S701, using a mask template to expose the initial substrate where thick film resistor cavities and conductor grooves need to be printed to obtain a first substrate with thick film resistor cavities and conductor grooves, baking the first substrate and then performing a first anisotropic wet etching to obtain a second substrate.

[0097] Step S701 is used to prepare a thick film resistor cavity and a conductor groove. After exposure, a first substrate can be prepared; after baking and a first anisotropic wet etching process, a second substrate can be prepared.

[0098] S702, after the cavity is manufactured, the second substrate is laser-drilled by using a picosecond laser system, and the perforated crystallized area formed by the laser drilling is subjected to a second anisotropic wet etching to obtain a third substrate, and the laser through-holes and conductor grooves formed on the third substrate are filled with metal.

[0099] S703 , printing the thick film resistor on the transfer substrate by screen printing, and then inverting the transfer substrate and attaching it to the thick film resistor cavity of the third substrate and performing flexible transfer.

[0100] S704, depositing an aluminum nitride (AlN) passivation layer of a preset thickness on the surface of the third substrate by magnetron sputtering. The magnetron sputtering is reactive magnetron sputtering, using a 5N purity Al target, nitrogen as a reaction gas, and argon as a carrier gas for sputtering.

[0101] Step S704 is used to deposit an AlN passivation layer.

[0102] S605, sintering the third substrate after the AlN passivation layer is deposited at high temperature. In this embodiment, the AlN sharpening layer is fully sintered by sintering at 850-860° C. in a nitrogen environment for 10-12 min.

[0103] S5606. After sintering is completed, the AlN passivation layer is photolithographically opened at the surface pad position, and then the surface pad is deposited by magnetron sputtering to finally complete the preparation of the thick film resistor.

[0104] Step S606 is used to perform AlN passivation layer photolithography and surface pad fabrication.

[0105] In this embodiment, the surface pad is a composite material of Cu, Ni and Au, wherein the thickness of the Cu layer is 50 nm, the thickness of the Ni layer is 55 nm, and the thickness of the Au layer is 60 nm.

[0106] The system embodiment described above is merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art may understand and implement it without creative work.

[0107] Through the description of the above implementation methods, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus a necessary general hardware platform, and of course, can also be implemented by hardware. Based on this understanding, the above technical solution is essentially or the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, a disk, an optical disk, etc., including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0108] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for preparing a thick film resistor based on a TGV process, characterized in that: The method comprises: A mask is used to expose the initial substrate where the thick film resistor cavity and the conductor groove need to be printed, so as to obtain a first substrate with the thick film resistor cavity and the conductor groove remaining therein, and the first substrate is baked and then subjected to a first anisotropic wet etching to obtain a second substrate; the initial substrate is a photosensitive glass substrate; The second substrate is laser-drilled, and the drilled crystallized area formed by the laser drilling is subjected to a second anisotropic wet etching to obtain a third substrate, and the laser through-holes and the conductor grooves formed on the third substrate are metal-filled; Printing the thick film resistor on the transfer substrate by screen printing, attaching the transfer substrate upside down in the thick film resistor cavity of the third substrate and performing flexible transfer printing; Depositing an aluminum nitride passivation layer of a preset thickness on the surface of the third substrate by magnetron sputtering; Sintering the third substrate at high temperature after the aluminum nitride passivation layer is deposited; After sintering is completed, the aluminum nitride passivation layer is photolithographically opened at the surface pad position, and the surface pad is deposited by magnetron sputtering to finally complete the preparation of the thick film resistor.

2. The method for preparing a thick film resistor based on the TGV process according to claim 1, characterized in that: A 5% HF solution is selected as the etching solution in the first anisotropic wet etching, and a 10% HF solution is selected as the etching solution in the second anisotropic wet etching.

3. The method for preparing a thick film resistor based on the TGV process according to claim 1, characterized in that: The transfer substrate is made of polydimethylsiloxane.

4. The method for preparing a thick film resistor based on the TGV process according to claim 1, characterized in that: The magnetron sputtering is reactive magnetron sputtering, which uses 5N purity Al target material, nitrogen as the reaction gas, and argon as the carrier gas for sputtering.

5. The method for preparing a thick film resistor based on the TGV process according to claim 2, characterized in that: The metal filling is made of copper material.

6. The method for preparing a thick film resistor based on the TGV process according to claim 1, characterized in that: The baking is continuous temperature rising baking.

7. The method for preparing a thick film resistor based on the TGV process according to claim 6, characterized in that: The continuous temperature rise baking is to place the first substrate in a precision oven at 495° C. for a first baking for 1 hour, and then heat the temperature to 590° C. for a second baking for 1 hour.

8. The method for preparing a thick film resistor based on the TGV process according to claim 1, characterized in that: The laser drilling parameters are 30W power and 40% duty cycle, and the aperture range of the laser drilling is 50 um.

9. The method for preparing a thick film resistor based on the TGV process according to claim 1, characterized in that: The surface pad is made of one of copper, nickel and gold or a combination of any multiple materials.

10. The method for preparing a thick film resistor based on the TGV process according to claim 9, characterized in that: The surface pad is a pad made of a composite material of copper, nickel and gold. The copper layer of the surface pad has a thickness of 50 nm, the nickel layer has a thickness of 55 nm and the gold layer has a thickness of 60 nm.

Images