Multilayer electronic component

Abstract

The present disclosure provides a multilayer electronic component. The multilayer electronic component may include: a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers; an interface plating layer disposed on an end portion of the inner electrode; and an external electrode disposed to contact at least a portion of an end portion of the dielectric layer disposed between the internal electrodes and to cover the interface plating layer, and including a conductive resin layer including a conductive metal and a resin.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0132538 filed on October 5, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a multi-layer electronic assembly. Background Art

[0003] Multilayer ceramic capacitors (MLCC, a type of multilayer electronic component) are chip capacitors mounted on printed circuit boards of various electronic products such as image display devices including liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones for charging or discharging.

[0004] Multilayer ceramic capacitors are used as components in various electronic devices because they have a small size, ensure high capacitance, and are easy to mount.

[0005] Recently, as electronic devices are miniaturized and implemented at a higher performance level, multilayer ceramic capacitors are also tending toward miniaturization and higher capacitance, and in accordance with this trend, the importance of ensuring high reliability of multilayer ceramic capacitors is increasing.

[0006] As a way of ensuring high reliability of a multilayer ceramic capacitor, a technique for applying a conductive resin layer to an external electrode has been disclosed in order to prevent cracks caused by absorbing tensile stress generated in a mechanical environment or a thermal environment.

[0007] The conductive resin layer is usually provided between the sintered electrode layer and the plating layer. However, in this case, there is a risk that the capacitance per unit volume of the multilayer ceramic capacitor may be reduced. On the other hand, when the conductive resin layer is provided directly on the body, there is a risk that the electrical connectivity between the inner electrode and the outer electrode may be reduced.

[0008] Therefore, there is a need for a method of improving capacitance per unit volume while ensuring electrical connectivity between inner and outer electrodes. Summary of the invention

[0009] An aspect of the present disclosure is to provide a multilayer electronic component having excellent reliability.

[0010] One aspect of the present disclosure is to improve electrical connectivity between inner and outer electrodes.

[0011] One aspect of the present disclosure is to improve the capacitance per unit volume of a multilayer electronic component.

[0012] According to some aspects of the present disclosure, a multilayer electronic component may include: a main body, including dielectric layers and internal electrodes alternately arranged with the dielectric layers; an interface plating layer, arranged on the ends of the internal electrodes; and an external electrode, arranged to contact at least a portion of the ends of the dielectric layers arranged between the internal electrodes and cover the interface plating layer, and including a conductive resin layer containing a conductive metal and a resin.

[0013] As one of the various effects of the present disclosure, an interface plating layer may be disposed on ends of the internal electrodes, and a conductive resin layer may be disposed to contact at least a portion of an end of a dielectric layer disposed between the internal electrodes and cover the interface plating layer, thereby improving the reliability of a multilayer electronic component.

[0014] As one of various effects of the present disclosure, electrical connectivity between internal and external electrodes may be improved.

[0015] As one of various effects of the present disclosure, capacitance per unit volume of a multilayer electronic component may be improved.

[0016] However, the advantages and effects of the present disclosure are not limited to the above and may be more easily understood in the course of describing specific embodiments of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other aspects, features and advantages of the present disclosure will be more clearly understood through the following detailed description in conjunction with the accompanying drawings, in which: Figure 1 is a perspective view schematically illustrating a multilayer electronic assembly according to some example embodiments of the present disclosure; Figure 2 is along Figure 1 A schematic cross-sectional view taken along line II' of ; Figure 3 is along Figure 1 A schematic cross-sectional view taken along line II-II'; Figure 4 is an exploded view schematically showing the main body; Figure 5 It is shown Figure 2 a schematic cross-sectional view of a portion of the body of; and Figure 6 It is shown Figure 2 A magnified view of the K1 region. DETAILED DESCRIPTION

[0018] Hereinafter, some embodiments of the present disclosure will be described with reference to specific example embodiments and the accompanying drawings. However, the embodiments of the present disclosure may be illustrated in many different forms and should not be construed as being limited to the specific embodiments set forth herein. The example embodiments disclosed herein are provided to enable those skilled in the art to better understand the present disclosure. Therefore, in the accompanying drawings, for the sake of clarity, the shapes and sizes of the elements may be exaggerated, and the same reference numerals will always be used to represent the same or similar elements.

[0019] In addition, in order to clearly describe the present disclosure in the drawings, the contents irrelevant to the description are omitted, and since the size of each component shown in the drawings is arbitrarily shown for the convenience of description, the present disclosure is not limited thereto. In addition, the same reference numerals are used to describe components having the same functions within the same conceptual scope. Throughout the specification, when a part "includes" or "contains" a specific component, unless otherwise specified, it indicates that other components are not excluded and other components may be further included.

[0020] In the drawings, a first direction may be defined as a thickness direction, a second direction may be defined as a length direction, and a third direction may be defined as a width direction.

[0021] Multilayer electronic components Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an example embodiment of the present disclosure.

[0022] Figure 2 is along Figure 1 Schematic cross-sectional view taken along line II'.

[0023] Figure 3 is along Figure 1 Schematic cross-sectional view taken along line II-II'.

[0024] Figure 4 is an exploded view schematically showing the main body.

[0025] Figure 5 It is shown Figure 2 A schematic cross-sectional view of a portion of the body of FIG.

[0026] Figure 6 It is shown Figure 2 A magnified view of the K1 region.

[0027] In the following, reference will be made to Figures 1 to 6The multilayer electronic component 100 according to an example embodiment of the present disclosure is described in detail. In addition, as an example of a multilayer electronic component, a multilayer ceramic capacitor (hereinafter referred to as "MLCC") will be described, but the present disclosure is not limited thereto, and the multilayer electronic component 100 can also be applied to various multilayer electronic components using ceramic materials, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0028] A multilayer electronic component 100 according to some example embodiments of the present disclosure may include: a body 110 including a dielectric layer 111 and internal electrodes 121 and 122 alternately arranged with the dielectric layer; interface plating layers 141 and 142 arranged on ends of the internal electrodes; and external electrodes 131 and 132 arranged to contact at least a portion of the ends of the dielectric layer arranged between the internal electrodes and cover the interface plating layers, and including conductive resin layers 131a and 132a, the conductive resin layers 131a and 132a including a conductive metal and a resin.

[0029] Generally, the conductive resin layer is generally provided between the sintered electrode layer and the plating layer provided on the body. However, in this case, as the thickness of the outer electrode increases, there may be a risk that the capacitance per unit volume of the multilayer ceramic capacitor may decrease. On the other hand, when the conductive resin layer is directly provided on the body, there may be a concern that the electrical connectivity between the inner electrode and the outer electrode may deteriorate.

[0030] According to an example embodiment of the present disclosure, an interface plating layer may be disposed on the ends of the inner electrodes, which may improve electrical connectivity between the inner electrodes and the outer electrodes, and a conductive resin layer may be disposed to contact at least a portion of the ends of a dielectric layer disposed between the inner electrodes and cover the interface plating layer, thereby improving reliability by ensuring adhesion between the outer electrodes and the body.

[0031] Hereinafter, each configuration included in the multilayer electronic component 100 according to the example embodiment of the present disclosure will be described.

[0032] The body 110 may include dielectric layers 111 and internal electrodes 121 and 122 that are alternately stacked.

[0033] There is no particular limitation on the specific shape of the body 110, but as shown in the figure, the body 110 may have a hexahedral shape or a shape similar thereto. Due to the shrinkage of the ceramic powder particles included in the body 110 during the sintering process, the body 110 may not have a hexahedral shape with completely straight lines, but may have a substantially hexahedral shape.

[0034] The body 110 may include a first surface 1 and a second surface 2 opposite to each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and opposite to each other in the second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1 and the second surface 2 and the third surface 3 and the fourth surface 4 and opposite to each other in a third direction.

[0035] Since the edge regions of the internal electrodes 121 and 122 are not disposed on the dielectric layer 111 to overlap, a step portion due to the thickness of the internal electrodes 121 and 122 may occur, and a corner connecting the first surface with the third surface and the fourth surface and / or a corner connecting the second surface with the third surface and the fourth surface may have a shape that shrinks toward the center of the body 110 in the first direction. Alternatively, due to shrinkage behavior during the sintering process of the body, a corner connecting the first surface 1 with the third surface 3, the fourth surface 4, the fifth surface 5, and the sixth surface 6 and / or a corner connecting the second surface 2 with the third surface 3, the fourth surface 4, the fifth surface 5, and the sixth surface 6 may have a shape that shrinks toward the center of the body 110 in the first direction. Alternatively, in order to prevent chipping defects, etc., the corners of each surface connecting the body 110 may be rounded by performing a separate process, so that the corner connecting the first surface with the third surface to the sixth surface and / or the corner connecting the second surface with the third surface to the sixth surface may have a rounded shape.

[0036] On the other hand, in order to suppress the step portions caused by the internal electrodes 121 and 122, the internal electrodes after stacking may be cut to expose the side surfaces of the capacitor forming portion Ac, and when the edge portions 114 and 115 are formed by stacking a single dielectric layer or two or more dielectric layers on both surfaces of the capacitor forming portion Ac in the third direction (width direction), the portion connecting the first surface to the fifth surface and the sixth surface and the portion connecting the second surface to the fifth surface and the sixth surface may not have a contracted shape.

[0037] In a state where the plurality of dielectric layers 111 forming the body 110 are sintered, the boundaries between the adjacent dielectric layers 111 may be integrated to such an extent that they are difficult to identify without using a scanning electron microscope (SEM). The number of stacked dielectric layers is not particularly limited and may be determined in consideration of the size of the multilayer electronic component. For example, the body may be formed by stacking 400 or more dielectric layers.

[0038] The dielectric layer 111 can be formed in the following manner: Prepare a ceramic slurry including ceramic powder particles, an organic solvent, and a binder, coat the slurry on a carrier film and dry the slurry to prepare a green ceramic sheet, and then sinter the green ceramic sheet. The ceramic powder particles are not particularly limited as long as sufficient electrostatic capacitance can be obtained. For example, barium titanate (BaTiO3)-based powder particles can be used as the ceramic powder particles. For a more specific example, the ceramic powder particles can be at least one selected from the group consisting of BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), and Ba(Ti 1-y Zr y )O3 (0 < y < 1).

[0039] The average thickness td of the dielectric layer 111 in the first direction is not particularly limited and can be, for example, from 0.01 μm to 10 μm. Additionally, the average thickness td of the dielectric layer 111 can be arbitrarily set according to desired characteristics or purposes. For example, in the case of small information technology (IT) electronic components, in order to achieve miniaturization and high capacitance, the average thickness td of at least one of the plurality of dielectric layers 111 can be less than or equal to 0.4 μm.

[0040] Here, the average thickness td of the dielectric layer 111 can refer to the dimension of the dielectric layer 111 in the first direction provided between the inner electrodes 121 and 122. The average thickness of the dielectric layer 111 can be measured by scanning the cross-sections of the main body 110 in the first direction and the second direction with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average value can be measured by measuring the thicknesses at a plurality of points (e.g., 30 points equally spaced from each other in the second direction) of one dielectric layer 111. The 30 points with equal spacing can be specified in the capacitance forming portion Ac described below. Additionally, when the average value measurement is extended to 10 dielectric layers 111 to measure the average value, the average thickness of the dielectric layer 111 can be further generalized.

[0041] The body 110 may include a capacitor forming portion Ac and cover portions 112 and 113, wherein the capacitor forming portion Ac is disposed inside the body 110 and is configured to form a capacitor by including a first internal electrode 121 and a second internal electrode 122, wherein the first internal electrode 121 and the second internal electrode 122 are disposed to face each other with a dielectric layer 111 interposed therebetween, and the cover portions 112 and 113 are formed above and below the capacitor forming portion Ac in a first direction.

[0042] In addition, the capacitance forming portion Ac is a portion contributing to forming capacitance of a capacitor and may be formed by repeatedly stacking a plurality of first and second internal electrodes 121 and 122 with a dielectric layer 111 therebetween.

[0043] The cover portions 112 and 113 may include an upper cover portion 112 disposed above the capacitance forming portion Ac in the first direction and a lower cover portion 113 disposed below the capacitance forming portion Ac in the first direction.

[0044] The upper cover portion 112 and the lower cover portion 113 may be formed by stacking a single dielectric layer or two or more dielectric layers in a thickness direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and may mainly serve to prevent damage to the internal electrodes due to physical stress or chemical stress.

[0045] The upper cover portion 112 and the lower cover portion 113 do not include an internal electrode, and may include the same material as the dielectric layer 111 .

[0046] That is, the upper cover part 112 and the lower cover part 113 may include a ceramic material, for example, a barium titanate (BaTiO 3 )-based ceramic material.

[0047] In addition, the thickness of the cover parts 112 and 113 in the first direction does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average thickness of the cover parts 112 and 113 in the first direction may be less than or equal to 15 μm.

[0048] The average thickness tc of the cover portions 112 and 113 may refer to a first direction dimension, and is a value obtained by averaging the first direction dimensions of the cover portions 112 and 113 measured at five regions spaced equally apart from each other in the upper or lower portion of the capacitance forming portion Ac.

[0049] In addition, edge portions 114 and 115 may be provided on the side surfaces of the capacitance forming portion Ac.

[0050] The edge portions 114 and 115 may include a first edge portion 114 disposed on one side surface of the capacitance forming portion Ac and a second edge portion 115 disposed on the other side surface of the capacitance forming portion Ac. That is, the edge portions 114 and 115 may be disposed on both side surfaces of the capacitance forming portion Ac in the width direction.

[0051] like Figure 3 As shown, the edge portions 114 and 115 may refer to regions between both ends of the first and second internal electrodes 121 and 122 and boundary surfaces of the body 110 , respectively, in a cross section obtained by cutting the body 110 in a width direction-thickness direction.

[0052] The edge portions 114 and 115 may mainly serve to prevent the inner electrodes from being damaged due to physical stress or chemical stress.

[0053] The edge portions 114 and 115 may be formed by forming internal electrodes by coating a conductive paste on regions other than regions where the edge portions are to be formed on the ceramic green sheets.

[0054] In addition, the width of the edge portions 114 and 115 in the third direction is not particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average width of the edge portions 114 and 115 in the third direction may be less than or equal to 15 μm.

[0055] The average width of the edge portions 114 and 115 may refer to an average size of an area where the inner electrode is spaced apart from the fifth surface in the third direction and an average size of an area where the inner electrode is spaced apart from the sixth surface in the third direction, and may be an average value obtained by averaging the third-direction dimensions of the edge portions 114 and 115 measured at five areas spaced apart from each other at equal intervals on the side surface of the capacitor forming portion Ac.

[0056] Thus, in some example embodiments, each of average sizes of regions of the internal electrodes 121 and 122 spaced apart from the fifth and sixth surfaces in the third direction may be equal to or less than 15 μm.

[0057] On the other hand, when a magnetic material is applied to the body 110 instead of the dielectric material, the multilayer electronic component can be used as an inductor. The magnetic material can be, for example, ferrite and / or metal magnetic particles. When the multilayer electronic component is used as an inductor, the inner electrode can be a coil conductor.

[0058] In addition, the multilayer electronic component may function as a piezoelectric element when a piezoelectric material is applied to the body 110 instead of the dielectric material. The piezoelectric material may be, for example, PZT (lead zirconate titanate).

[0059] In addition, when a ZnO-based material or a SiC-based material is applied to the body 110 instead of the dielectric material, the multilayer electronic component may function as a variable resistor, and when a spinel-based material is applied to the body 110 instead of the dielectric material, the multilayer electronic component may function as a thermistor.

[0060] That is, by appropriately changing the material or structure of the body 110 , the multilayer electronic component 100 according to some example embodiments of the present disclosure may be used not only as a multilayer ceramic capacitor but also as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0061] The internal electrodes 121 and 122 may be alternately disposed with the dielectric layer 111, for example, the first internal electrode 121 and the second internal electrode 122 as a pair of electrodes having different polarities may be disposed to face each other with the dielectric layer 111 interposed therebetween. The first internal electrode 121 and the second internal electrode 122 may be electrically isolated from each other by the dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122. In this case, the internal electrodes 121 and 122 may be alternately disposed with the dielectric layer 111 in the first direction.

[0062] The first inner electrode 121 may be spaced apart from the fourth surface 4 but may extend toward the third surface 3. The second inner electrode 122 may be spaced apart from the third surface 3 but may extend toward the fourth surface 4. The first inner electrode 121 may be electrically connected to the first outer electrode 131 on the third surface 3, and the second inner electrode 122 may be electrically connected to the second outer electrode 132 on the fourth surface 4.

[0063] The conductive metal included in the internal electrodes 121 and 122 may be one or more selected from the group consisting of Ni, Cu, Pd, Ag, Au, Pt, Sn, W, Ti, and alloys thereof, but the present disclosure is not limited thereto.

[0064] The method of forming the internal electrodes 121 and 122 is not particularly limited. For example, the internal electrodes 121 and 122 may be formed by coating a conductive paste for internal electrodes including a conductive metal on a ceramic green sheet and sintering the conductive paste. The conductive paste for internal electrodes may be coated using screen printing or gravure printing, but the present disclosure is not limited thereto.

[0065] The average thickness te of the internal electrodes 121 and 122 in the first direction is not particularly limited, and may be, for example, 0.01 μm to 3 μm. In addition, the average thickness te of the internal electrodes 121 and 122 may be arbitrarily set according to desired characteristics or purposes. For example, in the case of a small IT electronic component, the average thickness te of at least one of the plurality of internal electrodes 121 and 122 may be less than or equal to 0.4 μm to achieve miniaturization and high capacitance.

[0066] Here, the average thickness te of the internal electrode can be measured by scanning the first and second direction cross sections of the body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average value can be measured by measuring the thickness at multiple regions of one internal electrode 121 or 122 (for example, 30 regions spaced at equal intervals from each other in the second direction). 30 regions with equal intervals can be specified in the capacitor forming portion Ac. In addition, when the average value is measured by extending the average value measurement to 10 internal electrodes 121 and 122, the average thickness of the internal electrodes 121 and 122 can be further generalized.

[0067] The external electrodes 131 and 132 may be disposed on the body 110 and connected to the internal electrodes 121 and 122 , respectively.

[0068] like Figure 2 As shown in FIG. 1 , the first and second external electrodes 131 and 132 may be respectively disposed on the third and fourth surfaces 3 and 4 of the body 110 and connected to the first and second internal electrodes 121 and 122 through interface plating layers 141 and 142 , respectively.

[0069] In some example embodiments, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described, but the number or shape of the external electrodes 131 and 132 may be changed according to the shapes of the internal electrodes 121 and 122 or other purposes.

[0070] Figure 6 It is shown Figure 2 A magnified view of the K1 region.

[0071] The K1 region is shown by enlarging a portion of the region where the first external electrode 131 is provided, but the first external electrode 131 and the second external electrode 132 may differ only in that the first external electrode 131 is provided on the third surface and the second external electrode 132 is provided on the fourth surface, and the configurations of the first external electrode 131 and the second external electrode 132 may be similar to each other, and therefore, hereinafter, a description will be provided based on the first external electrode 131, but this may be considered to include the description of the second external electrode 132. In addition, the interface plating layers 141 and 142 are also described based on the first interface plating layer 141, but this may be considered to include the description of the second interface plating layer 142.

[0072] The interface plating layers 141 and 142 may be disposed on the ends of the inner electrodes 121 and 122 and may be used to improve the electrical connectivity between the inner electrodes 121 and 122 and the outer electrodes 131 and 132. In addition, the interface plating layers 141 and 142 may prevent the metal components of the outer electrodes 131 and 132 from diffusing into the inner electrodes 121 and 122, and thus may be used to suppress radiation cracks caused by volume expansion of the inner electrodes. The interface plating layers 141 and 142 may include a first interface plating layer 141 disposed on the end of the first inner electrode 121 and a second interface plating layer 142 disposed on the end of the second inner electrode 122.

[0073] In some example embodiments, the body 110 may include groove portions G1 and G2 in which ends of the internal electrodes 121 and 122 are spaced apart from one surface of the body 110, and the interface plating layers 141 and 142 may include a first region disposed in the groove portions G1 and G2 and a second region protruding onto one surface of the body.

[0074] The groove portions G1 and G2 may be formed by a difference in shrinkage behavior between the internal electrodes 121 and 122 and the dielectric layer 111 in the sintering process of the body 110. When the sintering shrinkage rate of the internal electrodes 121 and 122 is greater than the sintering shrinkage rate of the dielectric layer 111, a problem may occur in which the connectivity between the internal electrodes 121 and 122 and the external electrodes 131 and 132 is reduced due to the groove portions G1 and G2. Generally, in order to solve such a problem, attempts have been made to solve the problem by adding a process of removing the protruding dielectric layer using a sandblasting method. On the other hand, according to some example embodiments of the present disclosure, since the interface plating layers 141 and 142 include a first region disposed in the groove portions G1 and G2 and a second region protruding onto one surface of the body, the connectivity between the internal electrodes 121 and 122 and the external electrodes 131 and 132 may be improved without a separate polishing process.

[0075] In some example embodiments, the second region of the interface plating layer in the first and second direction cross-sections of the multilayer electronic component 100 may have a semicircular shape. Thus, the electrical connectivity between the inner and outer electrodes may be further improved by maximizing the contact area with the conductive resin layers 131a and 132a.

[0076] In some example embodiments, when the average thickness of the inner electrode is referred to as te, the average thickness of the dielectric layer is referred to as td, and the radius of the semicircular shape is referred to as r, te / 2≤r≤(te+td) / 2 may be satisfied. When the radius r of the semicircular shape is less than te / 2, the effect of improving the connectivity between the outer electrode and the inner electrode may be insufficient, and when the radius r of the semicircular shape exceeds (te+td) / 2, the interface plating layers 141 or 142 may be connected to each other to form a single layer, which may weaken the bonding force between the outer electrode and the body.

[0077] In some example embodiments, the radius r of the semicircular shape may be less than or equal to 4 μm. When the radius r of the semicircular shape exceeds 4 μm, adjacent interface plating layers 141 or 142 may be connected to each other to form a single layer, which may weaken the bonding force between the external electrode and the body.

[0078] The radius r of the semicircular shape may be measured by scanning the first and second direction cross sections of the body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. In addition, the radius r of the semicircular shape may be measured at any five interface plating layers 141 and 142, and the average value thereof may be used as the radius r of the semicircular shape.

[0079] In some example embodiments, the inner electrodes 121 and 122 may be provided in plural, and the interface plating layer 141 or 142 provided on one end of the plurality of inner electrodes 121 and 122 may be spaced apart from the interface plating layer 141 or 142 provided on one end of another inner electrode. Therefore, the conductive resin layers 131a and 132a may contact at least a portion of the end of the dielectric layer 111, thereby improving the bonding force between the outer electrodes 131 and 132 and the body 110.

[0080] In some example embodiments, the interface coatings 141 and 142 may have an amorphous structure. A crystalline structure refers to a structure in which the lattice structure can be expressed using symmetry elements such as translation, rotation, reflection, and inversion in terms of long-range periodicity in a three-dimensional lattice structure. On the other hand, an amorphous structure does not have long-range periodicity but refers to a repetitive structure having a short-range order by connecting atomic structures as basic units to each other.

[0081] Since the interface plating layers 141 and 142 have an amorphous structure, diffusion of metal components of the external electrodes 131 and 132 into the internal electrodes 121 and 122 may be more effectively suppressed.

[0082] In example embodiments, the interface plating layers 141 and 142 may include Ni and P. Therefore, the interface plating layers 141 and 142 may be easily controlled to have an amorphous structure, and may easily prevent metal of the external electrode from diffusing into the internal electrode.

[0083] In this case, a mass ratio of the P content to the Ni content (P content / Ni content) included in the interface plating layers 141 and 142 may be greater than or equal to 8% and less than or equal to 15%. When the mass ratio of the P content to the Ni content included in the interface plating layers 141 and 142 is greater than 15%, there may be a risk that the equivalent series resistance (ESR) between the inner electrode and the outer electrode may increase, and when the mass ratio of the P content to the Ni content included in the interface plating layers 141 and 142 is less than 8%, as the thermal expansion coefficient of the interface plating layers 141 and 142 increases, the difference in thermal expansion coefficient with the main body at high temperature may increase, which may weaken the bonding strength between the interface plating layer and the main body.

[0084] In some example embodiments, the interface plating layers 141 and 142 may include Ni and B. Therefore, the interface plating layers 141 and 142 may be easily controlled to have an amorphous structure, and may easily prevent a metal from an external electrode from diffusing into an internal electrode.

[0085] In this case, the mass ratio of the B content to the Ni content (B content / Ni content) contained in the interface plating layers 141 and 142 may be greater than or equal to 2.5% and less than or equal to 10%. Therefore, the charge transfer resistance of the interface plating layers 141 and 142 may be increased to improve corrosion resistance to external moisture exposure, moisture penetration, etc.

[0086] In addition, analysis of elements contained in the interface plating layers 141 and 142 may be performed by measuring a first-direction and a second-direction cross section passing through the third-direction center of the body 110 using a scanning electron microscope (SEM) and a dispersion spectrometer (EDS). After measuring the content of each element in the central portion of five or more interface plating layers 141 and 142 using EDS to obtain an average value of each element, the average value may be used to obtain a mass ratio of the P content to the Ni content or a mass ratio of the B content to the Ni content.

[0087] The external electrodes 131 and 132 may be disposed to contact at least a portion of the end of the dielectric layer 111 disposed between the internal electrodes and cover the interface plating layers 141 and 142, and may include conductive resin layers 131a and 132a including conductive metal and resin. Here, the end of the dielectric layer 111 may form the third surface or the fourth surface of the body 110.

[0088] The conductive metal included in the conductive resin layers 131a and 132a does not need to be particularly limited, and may include, for example, at least one selected from the group consisting of Cu, Ni, Sn, Pd, Pt, Au, Ag, Pb and alloys thereof, and the conductive metal may include one or more selected from the group consisting of Cu, Ag, Sn and alloys thereof.

[0089] The conductive resin layers 131a and 132a can be used to electrically connect the plating layers 131b and 132b to the internal electrodes 121 and 122, and can prevent the occurrence of cracks by absorbing tensile stress generated in a mechanical environment or a thermal environment when the electronic components are mounted on the substrate, and can be used to protect the multilayer ceramic capacitor from warping of the substrate.

[0090] Reference Figure 6 The conductive resin layer 131a may include a conductive metal (eg, 131a-1 and 131a-3) and a resin 131a-2, and the conductive metal included in the conductive resin layer 131a may include a plurality of metal particles 131a-1 and a first intermetallic compound 131a-3 connecting at least a portion of the plurality of metal particles.

[0091] The metal particles 131 a - 1 may include one or both of Ag and Cu, and may more preferably include Ag.

[0092] The first intermetallic compound 131a-3 may be used to improve electrical connectivity by connecting at least a portion of the plurality of metal particles. In addition, the first intermetallic compound 131a-3 may be disposed to surround at least a portion of the plurality of metal particles 131a-1. In addition, the first intermetallic compound 131a-3 may minimize stress inside the body 110 and improve high temperature load and moisture resistance characteristics.

[0093] The first intermetallic compound 131a-3 may include an intermetallic compound between a low melting point metal and metal particles. The low melting point metal included in the conductive resin layer paste may be partially melted during the drying and curing heat treatment process and may form the first intermetallic compound 131a-3 with some of the metal particles. In this case, the low melting point metal may have a melting point of 300°C or less.

[0094] For a more specific example, the low melting point metal may be Sn, Sn 96.5 Ag 3.0 Cu 0.5 Sn 42 Bi 58 and Sn 72 Bi 28 After the conductive resin layer paste is applied on the body, Sn melts in the drying and curing process, and the melted Sn wets the high melting point metal particles such as Ag or Cu by capillary action and reacts with a portion of the Ag or Cu metal particles to form the first intermetallic compound 131a-3, such as Ag3Sn, Cu6Sn5, Cu3Sn, etc. Figure 6As shown, Ag or Cu that does not participate in the reaction remains in the form of metal particles 131a-1. In addition, even if the drying and curing processes are completed, some Sn does not participate in the reaction and may react with the plating layers 131b and 132b during the subsequent plating heat treatment to form an intermetallic compound. In addition, even after the plating heat treatment, some low melting point metals may remain by being contained in the first intermetallic compound.

[0095] In addition, the low melting point metal may react with the interface plating layers 141 and 142 to form a second intermetallic compound in the interface between the interface plating layers 141 and 142 and the conductive resin layers 131a and 132a. In this case, the second intermetallic compound may include Ni and Sn.

[0096] The resin 131 a - 2 may include a thermosetting resin having an electrical insulating property.

[0097] According to some embodiments, the thermosetting resin may include, for example, epoxy resin, but the present disclosure is not limited thereto, and may include, for example, bisphenol A resin, ethylene glycol epoxy resin, novolac epoxy resin, or a resin that is liquid at room temperature due to a low molecular weight, or a derivative thereof.

[0098] The external electrodes 131 and 132 may include plating layers 131 b and 132 b disposed on the conductive resin layers 131 a and 132 a .

[0099] The plating layers 131b and 132b are used to improve mounting characteristics. The type of the plating layers 131b and 132b is not particularly limited, and the plating layers 131b and 132b may be plating layers including one or more of Ni, Sn, Pd, and alloys thereof, and may be formed of a plurality of layers.

[0100] For a more specific example of the plating layers 131b and 132b, the plating layers 131b and 132b may include a Ni plating layer or a Sn plating layer, and may be a form in which a Ni plating layer and a Sn plating layer are sequentially formed on the conductive resin layers 131a and 132a, or may be a form in which a Sn plating layer, a Ni plating layer, and a Sn plating layer are sequentially formed. In addition, the plating layers 131b and 132b may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0101] Although the exemplary embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments and drawings, but is defined by the appended claims. Therefore, those of ordinary skill in the art may make various substitutions, modifications or alterations without departing from the scope of the present disclosure defined by the appended claims, and these substitutions, modifications or alterations should be interpreted as being included within the scope of the present disclosure.

[0102] In addition, the expression "exemplary embodiment" used in the present disclosure does not mean the same embodiment, and is provided to emphasize and explain different unique characteristics. However, the embodiment presented above does not exclude the combination of features with another embodiment. For example, although the content described in a specific embodiment is not described in another embodiment, the content can also be understood as a description related to another embodiment, unless there is a description contrary to or contradictory to the content in another embodiment.

[0103] In the present disclosure, the terms are used only to describe specific embodiments and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, a singular form may also include a plural form.

Claims

1. A multilayer electronic component comprising: A main body, comprising a dielectric layer and inner electrodes arranged alternately with the dielectric layer; an interface coating disposed on an end portion of at least one of the inner electrodes; as well as an external electrode, arranged to contact at least a portion of an end portion of the dielectric layer and cover the interface plating layer, Wherein, the external electrode includes a conductive resin layer including conductive metal and resin.

2. The multilayer electronic component according to claim 1, wherein The body includes a groove portion, the end portion of the inner electrode is spaced apart from one surface of the body by the groove portion, and The interface plating layer includes a first region disposed in the recessed portion and a second region protruding from one surface of the body.

3. The multilayer electronic component according to claim 2, wherein: The inner electrodes and the dielectric layers are alternately arranged in a first direction, and the body includes: a first surface and a second surface, which are opposite to each other in the first direction; a third surface and a fourth surface, which are connected to the first surface and the second surface and are opposite to each other in the second direction; and a fifth surface and a sixth surface, which are connected to the first surface to the fourth surface and are opposite to each other in the third direction, In cross sections of the multilayer electronic component in the first direction and the second direction, the second region of the interface plating layer has a semicircular shape.

4. The multilayer electronic component according to claim 3, wherein: When the average thickness of the inner electrode is te, the average thickness of the dielectric layer is td, and the radius of the semicircular shape is r, te / 2≤r≤(te+td) / 2 is satisfied.

5. The multilayer electronic component according to claim 3, wherein: The radius of the semicircular shape is less than or equal to 4 μm.

6. The multilayer electronic component according to claim 1, wherein: The main body includes a plurality of the interface coatings, Each of the plurality of interface plating layers is spaced apart from each other.

7. The multilayer electronic component according to claim 1, wherein: The interface coating has an amorphous structure.

8. The multilayer electronic component according to claim 1, wherein The interface plating layer includes Ni and P.

9. The multilayer electronic component according to claim 8, wherein: The mass ratio of the P content to the Ni content included in the interface plating layer is greater than or equal to 8% and less than or equal to 15%.

10. The multilayer electronic component according to claim 1, wherein The interface coating includes Ni and B.

11. The multilayer electronic component according to claim 10, wherein: The mass ratio of the B content to the Ni content included in the interface plating layer is greater than or equal to 2.5% and less than or equal to 10%.

12. The multilayer electronic component according to claim 1, wherein The conductive metal included in the conductive resin layer includes one or more of Cu, Ag, Sn, and alloys thereof.

13. The multilayer electronic component according to claim 1, wherein The conductive metal included in the conductive resin layer includes a plurality of metal particles and a first intermetallic compound connecting at least a portion of the plurality of metal particles.

14. The multilayer electronic component according to claim 13, wherein: The plurality of metal particles include Ag and / or Cu, and The first intermetallic compound includes one or more of Ag3Sn, Cu6Sn5 and Cu3Sn.

15. The multilayer electronic component according to claim 1, wherein A second intermetallic compound is disposed in an interface between the interface plating layer and the external electrode, and the second intermetallic compound includes Ni and Sn.

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