AMB product of high-identification pr target and preparation method thereof

Abstract

The application discloses an AMB product of a high-identification PR target point and a preparation method thereof, and comprises the following steps: S1. Preparing a copper-clad ceramic substrate; using an active metal brazing process to manufacture the copper-clad ceramic substrate; S2. Manufacturing a copper surface PR target point etching hole; using a chemical method to manufacture the copper surface PR target point etching hole through one-time etching; S3. Removing solder from the PR target point etching hole; using a chemical method to manufacture the copper surface PR target point etching hole through two-time etching; removing the solder in the PR target point etching hole; S4. Laser marking ceramic in the PR target point etching hole; using a laser to perform laser marking on the ceramic in the PR target point etching hole; and S5. Automatic optical detection; using an AOI automatic optical detector to identify the target point after cleaning the AMB product, and the application realizes the change of the PR target point processing surface from the original copper surface to the ceramic surface, and significantly increases the identification degree of the PR target point.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor packaging, and in particular relates to an AMB product with high recognition PR target and a preparation method thereof. Background Art

[0002] AMB ceramic substrates achieve bonding through a high-temperature chemical reaction between ceramic and active metal solder paste, resulting in higher bond strength and improved reliability. They are ideal for connectors or applications requiring high current and heat dissipation. Due to their high thermal conductivity and insulation properties, AMB copper-clad ceramic substrates are widely used in semiconductor device packaging with high power and high heat dissipation requirements. AMB products require alignment by identifying the PR target of the AMB product during downstream chip sintering and wire bonding processes.

[0003] like Figure 1 、 Figure 3-4 The existing AMB product target manufacturing process shown is to perform laser marking on the copper surface after copper etching. Due to the high reflectivity of copper, the laser marking depth is generally ≤5um. After cleaning, the copper oxide is removed, and the recognition is very low, which cannot meet the alignment requirements of the downstream packaging process. Summary of the Invention

[0004] Purpose of the invention: The purpose of the present invention is to address the deficiencies in the prior art and provide an AMB product with high recognition of PR targets and a preparation method thereof.

[0005] Technical solution: A method for preparing an AMB with high recognition PR target, comprising a solder layer, a copper layer and a ceramic layer (3), wherein the preparation steps are as follows:

[0006] S1. Preparation of copper-clad ceramic substrates; fabrication of copper-clad ceramic substrates using an active metal brazing process;

[0007] S2. Preparation of PR target etching holes on copper surface; using chemical method, PR target etching holes are prepared in one etching step on copper surface;

[0008] S3. Removal of solder from PR target etch holes: Using a chemical method, create PR target etch holes on the copper surface through secondary etching; remove the solder from the PR target etch holes;

[0009] S4. Laser marking of ceramics in PR target etched holes; Use laser to mark ceramics in PR target etched holes;

[0010] S5. Automatic optical inspection: Use the AOI automatic optical inspection instrument to identify the target of the cleaned AMB product.

[0011] A further improvement of the present invention is that the thickness of the copper layer is 0.5 mm, and the thickness of the ceramic layer (3) is 0.25 mm.

[0012] A further improvement of the present invention is that, in step S2, the steps for making the PR target etching hole on the copper surface are:

[0013] S21. Substrate cleaning: Before etching, the copper surface is thoroughly cleaned to remove oil, oxides, and dust impurities to ensure that the patterned dry film can fully adhere to the copper surface.

[0014] S22. Fabrication of dry film patterns. When designing the dry film pattern, the pattern of the etched holes must be precisely designed based on the position of the PR target, with no positional deviation.

[0015] S23. Circuit film application: Use FST-50um dry film to apply circuit film to the copper-clad ceramic substrate. During the application process, there must be no bubbles, wrinkles, or dry film damage.

[0016] S24. Line exposure; use the line film exposure machine to expose the pattern;

[0017] S25. An etched hole is made by etching once; a chemical method is used to remove the copper surface without dry film covering on the horizontal line body, and the copper surface shape is etched;

[0018] S26. Remove the dry film; use a 10% by mass sodium hydroxide solution to remove excess dry film patterns.

[0019] A further improvement of the present invention is that in step S21, when cleaning the substrate, a dilute sulfuric acid solution with a mass concentration of 10%, a sodium hydroxide solution with a mass concentration of 10% and high-pressure water are used to wash and clean the copper surface of the substrate.

[0020] A further improvement of the present invention is that in step S23, the temperature during the circuit film lamination process on the copper-clad ceramic substrate is 110°C and the pressure is 5kg / cm².

[0021] A further improvement of the present invention is that, in step S3, after the solder in the PR target etching hole is removed, there is no solder residue or solder over-etching.

[0022] A further improvement of the present invention is that in step S4, the PR target laser marking is performed on the ceramic surface in the etched hole, and a black ceramic molten layer is generated on the laser-marked ceramic surface, so that it will not be cleaned off in the subsequent process, which is used to improve the recognition of the PR target by the application end.

[0023] An AMB product with a high-recognition PR target adopts an AMB preparation method for a high-recognition PR target, wherein the solder layer includes solder layer 1 and solder layer 2, the solder layer 1 is arranged on the top side of the ceramic layer, and the solder layer 2 is arranged on the bottom side of the ceramic layer, and the copper layer includes copper layer 1 and copper layer 2, the solder layer 1 is located between copper layer 1 and the ceramic layer, and the solder layer 2 is located between copper layer 2 and the ceramic layer.

[0024] Compared with the prior art, the present invention provides an AMB product with high recognition of PR targets and its preparation method, which achieves at least the following beneficial effects:

[0025] The present invention utilizes copper etching and solder etching processes to remove the copper and solder layers corresponding to the original PR target, thereby realizing the transformation of the processed surface of the PR target from the original copper surface to the ceramic surface; utilizes a laser marking process to laser mark the ceramic surface to generate a black ceramic molten layer, which will not be removed after the cleaning process, thereby significantly increasing the recognition of the PR target; the PR target prepared by the present invention has a significant difference in longitudinal size compared to the existing PR target, and the marking depth is greatly increased, thereby further increasing the recognition of the PR target; the PR target prepared by the present invention is not affected by the copper thickness, ceramic type, and ceramic color differences of AMB products, does not require the introduction of new processes, and has universal applicability. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Schematic diagram of the AMB product stack and existing copper surface PR target;

[0027] Figure 2 Schematic diagram of the AMB product stack and the copper surface PR target of the present invention;

[0028] Figure 3 This is a physical picture of the PR target on the existing copper surface of the AMB product after laser marking;

[0029] Figure 4 This is a physical picture of the PR target on the existing copper surface of the AMB product after cleaning;

[0030] Figure 5 This is a physical picture of the PR target of the AMB product of the present invention after laser marking;

[0031] Figure 6 This is a physical picture of the PR target of the AMB product of the present invention after cleaning;

[0032] Description of reference numerals:

[0033] 1-copper layer 1; 2-solder layer 1; 3-ceramic layer; 4-solder layer 2; 5-copper layer 2; H1-original marking depth; H2-marking depth of the present invention. DETAILED DESCRIPTION

[0034] Various exemplary embodiments of the present invention will now be described in detail. It should be noted that unless otherwise specifically stated, the relative arrangement of components and steps, numerical expressions, and values ​​set forth in these embodiments do not limit the scope of the present invention. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.

[0035] Techniques, methods, and apparatus known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and apparatus should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not limiting. Therefore, other examples of the exemplary embodiments may have different values.

[0036] See Figure 2 、 Figure 5-6 A method for preparing an AMB with high recognition PR target, comprising a solder layer, a copper layer and a ceramic layer (3), wherein the preparation steps are as follows:

[0037] S1. Preparation of copper-clad ceramic substrates; fabrication of copper-clad ceramic substrates using an active metal brazing process;

[0038] S2. Preparation of PR target etching holes on copper surface; using chemical method, PR target etching holes are prepared in one etching step on copper surface;

[0039] S3. Removal of solder from PR target etch holes: Using a chemical method, create PR target etch holes on the copper surface through secondary etching; remove the solder from the PR target etch holes;

[0040] S4. Laser marking of ceramics in PR target etched holes; Use laser to mark ceramics in PR target etched holes;

[0041] S5. Automatic optical inspection: Use the AOI automatic optical inspection instrument to identify the target of the cleaned AMB product.

[0042] The thickness of the copper layer is 0.5 mm, and the thickness of the ceramic layer 3 is 0.25 mm.

[0043] In step S2, the steps for making the copper surface PR target etching hole are as follows:

[0044] S21. Substrate cleaning: Before etching, the copper surface is thoroughly cleaned to remove oil, oxides, and dust impurities to ensure that the patterned dry film can fully adhere to the copper surface.

[0045] S22. Fabrication of dry film patterns. When designing the dry film pattern, the pattern of the etched holes must be precisely designed based on the position of the PR target, with no positional deviation.

[0046] S23. Circuit film application: Use FST-50um dry film to apply circuit film to the copper-clad ceramic substrate. During the application process, there must be no bubbles, wrinkles, or dry film damage.

[0047] S24. Line exposure; use the line film exposure machine to expose the pattern;

[0048] S25. An etched hole is made by etching once; a chemical method is used to remove the copper surface without dry film covering on the horizontal line body, and the copper surface shape is etched;

[0049] S26. Remove the dry film; use a 10% by mass sodium hydroxide solution to remove excess dry film patterns.

[0050] In step S21 , the copper surface of the substrate is cleaned by washing with a dilute sulfuric acid solution having a mass concentration of 10%, a sodium hydroxide solution having a mass concentration of 10%, and high-pressure water.

[0051] In step S23, the temperature during the circuit film lamination process on the copper-clad ceramic substrate is 110° C. and the pressure is 5 kg / cm².

[0052] In step S3, after the solder in the PR target etching hole is removed, there is no solder residue or solder over-etching.

[0053] In step S4, the PR target laser marking is performed on the ceramic surface in the etched hole. A black ceramic molten layer is generated on the laser-marked ceramic surface, which will not be cleaned off in the subsequent process, thereby improving the recognition of the PR target by the application end.

[0054] An AMB product with a high-recognition PR target adopts an AMB preparation method for a high-recognition PR target, wherein the solder layer includes solder layer 1 2 and solder layer 2 4, the solder layer 1 2 is arranged on the top side of the ceramic layer 3, and the solder layer 2 4 is arranged on the bottom side of the ceramic layer 3, the copper layer includes copper layer 1 and copper layer 2 5, the solder layer 1 2 is located between the copper layer 1 and the ceramic layer 3, and the solder layer 2 4 is located between the copper layer 2 5 and the ceramic layer 3.

[0055] The present invention utilizes copper etching and solder etching processes to remove the copper and solder layers corresponding to the original PR target, thereby realizing the transformation of the PR target processing surface from the original copper surface to the ceramic surface; utilizing the laser marking process, laser marking on the ceramic surface can generate a black ceramic molten layer that will not be removed after cleaning, significantly increasing the recognition of the PR target; the PR target prepared by the present invention has a significant difference in longitudinal size compared to the existing PR target, and the marking depth is greatly increased, such as Figure 1 As shown, the original marking depth H1≤5um, such as Figure 2As shown, the marking depth H2 of the present invention is the thickness of the copper layer 1 + the thickness of the solder layer 1 + the original marking depth, which increases the recognition of the PR target; the PR target prepared by the present invention is not affected by the copper thickness, ceramic type, and ceramic color differences of the AMB product, no new process is introduced, and it has universal applicability.

[0056] The specific embodiments described herein are merely illustrative of the spirit of the present invention. Persons skilled in the art may make various modifications, additions, or substitutions to the described specific embodiments without departing from the spirit of the present invention or exceeding the scope of the appended claims.

Claims

1. A method for preparing AMBs with high recognition of PR targets, characterized in that: The method comprises a solder layer, a copper layer and a ceramic layer (3), and the preparation steps are as follows: S1. Preparation of copper-clad ceramic substrates; fabrication of copper-clad ceramic substrates using an active metal brazing process; S2. Preparation of PR target etching holes on copper surface; using chemical method, PR target etching holes are prepared in one etching step on copper surface; S3. Removal of solder from PR target etch holes: Using a chemical method, create PR target etch holes on the copper surface through secondary etching; remove the solder from the PR target etch holes; S4. Laser marking of ceramics in PR target etched holes; Use laser to mark ceramics in PR target etched holes; S5. Automatic optical inspection: Use the AOI automatic optical inspection instrument to identify the target of the cleaned AMB product.

2. The method for preparing an AMB with high recognition rate for PR targets according to claim 1, characterized in that: The thickness of the copper layer is 0.5 mm, and the thickness of the ceramic layer (3) is 0.25 mm.

3. The method for preparing an AMB with high recognition rate for PR targets according to claim 1, characterized in that: In step S2, the steps for making the copper surface PR target etching hole are as follows: S21. Substrate cleaning: Before etching, the copper surface is thoroughly cleaned to remove oil, oxides, and dust impurities to ensure that the patterned dry film is completely adhered to the copper surface. S22. Fabrication of dry film patterns. When designing the dry film pattern, the pattern of the etched holes must be precisely designed based on the position of the PR target, with no positional deviation. S23. Circuit film application: Use FST-50um dry film to apply circuit film to the copper-clad ceramic substrate. During the application process, there must be no bubbles, wrinkles, or dry film damage. S24. Line exposure; Use a line film exposure machine to expose the graphics; S25. An etched hole is made by etching once; a chemical method is used to remove the copper surface without dry film covering on the horizontal line body, and the copper surface shape is etched; S26. Remove the dry film; use a 10% by mass sodium hydroxide solution to remove excess dry film patterns.

4. The method for preparing an AMB with high recognition rate for PR targets according to claim 3, characterized in that: In step S21 , the copper surface of the substrate is cleaned by washing with a dilute sulfuric acid solution having a mass concentration of 10%, a sodium hydroxide solution having a mass concentration of 10%, and high-pressure water.

5. The method for preparing an AMB with high recognition rate for PR targets according to claim 3, characterized in that: In step S23, the temperature during the circuit film lamination process on the copper-clad ceramic substrate is 110° C. and the pressure is 5 kg / cm².

6. The method for preparing an AMB with high recognition rate for PR targets according to claim 1, characterized in that: In the step S3, after the solder in the PR target etching hole is removed, there is no solder residue or solder over-etching.

7. The method for preparing an AMB with high recognition rate for PR targets according to claim 1, characterized in that: In step S4, the PR target laser marking is performed on the ceramic surface in the etched hole, and a black ceramic molten layer is generated on the laser-marked ceramic surface, so that it will not be washed away in the subsequent process, which is used to improve the recognition of the PR target by the application end.

8. An AMB product with high recognition PR target, characterized in that: A method for preparing an AMB with a high recognition PR target as described in claim 1 is adopted, wherein the solder layer comprises a solder layer 1 (2) and a solder layer 2 (4), the solder layer 1 (2) is arranged on the top side of the ceramic layer (3), and the solder layer 2 (4) is arranged on the bottom side of the ceramic layer (3), and the copper layer comprises a copper layer 1 (1) and a copper layer 2 (5), the solder layer 1 (2) is located between the copper layer 1 (1) and the ceramic layer (3), and the solder layer 2 (4) is located between the copper layer 2 (5) and the ceramic layer (3).

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