Wafer diameter measuring device and method

Abstract

The present invention provides a wafer diameter measuring device and method, which belongs to the field of semiconductor manufacturing technology. The wafer diameter measuring device includes a first support seat, a light source transmitting module, a signal receiving module and a processing module. The first support seat is used to place a wafer to be measured, and the light source transmitting module is used to transmit a light signal. The light source transmitting module has a light-emitting surface with a preset area. The first support seat and the signal receiving module are both arranged on the light signal transmission path of the light source transmitting module. The signal receiving module is used to obtain a first light signal after the light signal is blocked by the wafer to be measured. The processing module is configured to pre-store a correspondence between the wafer diameter and the first light signal, so as to determine the diameter of the wafer to be measured based on the correspondence and the first light signal. The wafer diameter measuring device improves the efficiency and accuracy of wafer diameter measurement.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor manufacturing, and more specifically, relates to a wafer diameter measuring device and method. Background Art

[0002] In the wafer processing process, after the single crystal silicon rod is sliced, the edge of the sliced ​​wafer needs to be rounded so that the edge can form a certain contour shape to improve the mechanical strength and processability of the wafer. At the same time, the diameter of the wafer is polished to a certain size to meet the customer's requirements. After polishing, the wafer needs to be tested to see if its diameter meets the customer's specifications. In addition, after the polishing process, the wafer usually only needs to go through one or two more processes, such as cleaning and epitaxial processes (if necessary), before the wafer product can be delivered to the customer. The polished wafer also needs to have its diameter measured to check whether it meets customer requirements.

[0003] In order to measure whether the wafer diameter is qualified, the traditional solution is to use a micrometer to measure by a surveyor. However, manual measurement is not only susceptible to human interference, but the measurement results are also easily affected by human factors such as the quality of the surveyor, work experience, and measurement steps, resulting in low measurement accuracy, large deviation in measurement results, and time-consuming and labor-intensive. Summary of the invention

[0004] The object of the present invention is to provide a wafer diameter measuring device and method, which can improve the accuracy and efficiency of wafer diameter measurement.

[0005] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: the first aspect of the present invention provides a wafer diameter measuring device, including a first support seat, a light source transmitting module, a signal receiving module and a processing module; The first support base is used to place the wafer to be tested, and the light source transmitting module is used to transmit a light signal. The light source transmitting module has a light-emitting surface with a preset area. The first support base and the signal receiving module are both arranged on the light signal transmission path of the light source transmitting module, and the signal receiving module is used to obtain the first light signal after the light signal is blocked by the wafer to be tested; the processing module is configured to pre-store the correspondence between the wafer diameter and the first light signal, so as to determine the diameter of the wafer to be tested based on the correspondence and the first light signal after the wafer to be tested is blocked.

[0006] In one embodiment, the light source emission module is used to emit parallel light, and the first light signal is luminous flux.

[0007] In one embodiment, the light signal emission direction of the light source emission module is the same as the orientation of the first support base.

[0008] In one embodiment, the area of ​​the optical signal receiving surface of the signal receiving module is larger than the area of ​​the optical signal emitting surface of the light source emitting module.

[0009] In one embodiment, the light source emitting module has an annular light emitting surface, the inner diameter of the light emitting surface is smaller than the diameter of the wafer to be measured, and the outer diameter of the light emitting surface is larger than the diameter of the wafer to be measured.

[0010] In one embodiment, the first supporting seat has a bearing surface for placing a wafer, the outer contour of the bearing surface is circular, and the diameter of the bearing surface is 1 / 2-2 / 3 of the diameter of the wafer.

[0011] In one embodiment, the center of the annular light-emitting surface is coaxially arranged with the center of the bearing surface.

[0012] In one embodiment, it further includes a plurality of second support bases spaced apart and arranged in parallel, the first support base and the light source emitting module are arranged on the front side of the second support base, and the signal receiving module is arranged on the back side of the second support base.

[0013] In one embodiment, a projection area of ​​the second support seat in the vertical direction is larger than an area of ​​an optical signal receiving surface of the signal receiving module.

[0014] In one embodiment, the number of the second supporting bases is greater than three.

[0015] In one embodiment, a support frame is further included, wherein the support frame includes a base and a support member vertically fixed to the base, and the second support seat is fixed to the support member at intervals.

[0016] In one embodiment, the corresponding relationship is a fitting curve between a pre-stored wafer diameter and the corresponding first optical signal.

[0017] A second aspect of the present invention provides a wafer diameter measurement method, comprising: Acquire a first optical signal after the optical signal emitted by the light source emission module is blocked by the wafer to be tested; The diameter of the wafer to be measured is acquired according to the pre-stored correspondence between the wafer diameter and the first optical signal and the first optical signal.

[0018] In one embodiment, the first optical signal is light flux.

[0019] The wafer diameter measuring device provided by the present invention includes a first support base, a light source transmitting module, a signal receiving module and a processing module. The first support base is used to place the wafer to be measured, the light source transmitting module is used to transmit a light signal, the light source transmitting module has a light-emitting surface of a preset area, the first support base and the signal receiving module are both arranged on the light signal transmission path of the light source transmitting module, the signal receiving module is used to obtain a first light signal after the light signal is blocked by the wafer to be measured, the processing module is configured to pre-store the correspondence between the wafer diameter and the first light signal, so as to determine the diameter of the wafer to be measured according to the correspondence and the first light signal. The first support base and the signal receiving module of the wafer diameter measuring device are both arranged on the light signal transmission path of the light source transmitting module. When the measuring device is in use, the signal receiving module receives the first light signal of the light signal emitted by the light source transmitting module after being blocked by the wafer to be measured, and the diameter of the wafer to be measured can be obtained according to the correspondence between the first light signal and the wafer diameter pre-stored in the processing module. The wafer diameter measuring device improves the efficiency and accuracy of wafer diameter measurement.

[0020] The wafer diameter measurement method provided by the present invention is applied to the above-mentioned wafer diameter measurement device, including obtaining a first light signal after the light signal emitted by the light source transmitting module is blocked by the wafer to be measured, and obtaining the diameter of the wafer to be measured according to the pre-stored correspondence between the wafer diameter and the first light signal and the first light signal. The wafer diameter measurement method can obtain the diameter of the wafer to be measured through the correspondence between the first light signal after the light signal emitted by the light source transmitting module is blocked by the wafer and the known wafer diameter, and the first light signal after the wafer to be measured is blocked obtained by the signal receiving module. The wafer diameter measurement method improves the efficiency and accuracy of wafer diameter measurement. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 A schematic structural diagram of a wafer diameter measuring device provided by an embodiment of the present invention; Figure 2 A schematic diagram of the structure of a wafer diameter measuring device provided by an embodiment of the present invention, wherein the arrow indicates the light emission direction of the light source emission module; Figure 3 A flow chart of a wafer diameter measurement method provided in an embodiment of the present invention.

[0023] Among them, the reference numerals in the figure are: 1- first support seat; 2-light source emission module; 3-Signal receiving module; 4- Wafer; 5- second support seat; 6-support frame; 11- bearing surface; 21- luminous surface; 61- base; 62-Support member. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0026] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0027] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. It should be understood that the term "and / or" used in this article is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0028] In order to measure the diameter of silicon wafers, the current conventional solution is to use a micrometer or optical projection to perform measurement operations by measurement personnel. However, manual measurement is not only susceptible to human interference, but the measurement results are also easily affected by human factors such as the quality of the measurement personnel, work experience, and measurement steps, resulting in low measurement accuracy, large deviation, and time-consuming and labor-intensive. In addition, in order to improve the measurement accuracy, in the process of executing the manual measurement solution that relies on manual labor, it is necessary to simultaneously measure multiple samples of different parts of the wafer when measuring the wafer diameter, which further leads to low efficiency of manual measurement. Based on the above problems, the present application provides a wafer diameter measurement device and method.

[0029] The wafer diameter measuring device and method provided by the present invention are described in detail below in conjunction with specific embodiments.

[0030] Figure 1 For a schematic diagram of the structure of a wafer diameter measuring device provided by an embodiment of the present invention, please refer to Figure 1 A first aspect of this embodiment provides a wafer diameter measuring device, including a first supporting seat 1, a light source transmitting module 2, a signal receiving module 3 and a processing module (not shown in the figure).

[0031] The first support seat 1 is used to place the wafer 4 to be tested, the light source transmitting module 2 is used to transmit a light signal, the light source transmitting module 2 has a light-emitting surface with a preset area, the first support seat 1 and the signal receiving module are both arranged on the light signal transmission path of the light source transmitting module 2, and the signal receiving module 3 is used to obtain the first light signal Q after the light signal is blocked by the wafer 4; the processing module is configured to pre-store the correspondence between the wafer diameter D and the first light signal Q, so as to determine the diameter of the wafer 4 to be tested based on the correspondence and the first light signal Q.

[0032] The first support seat 1 of this embodiment is used to place the wafer 4 to be tested. This embodiment does not specifically limit the specific form of the first support seat 1. The first support seat 1 of this embodiment is arranged on the optical signal transmission path of the light source transmission module 2. The signal receiving module 3 of this embodiment is used to receive the first optical signal Q after being blocked by the wafer 4. For example, Figure 1 It can be known that the light signal emission direction of the light source emitting module 2 of this embodiment is the same as the direction of the first support seat 1. The light source emitting module 2 of this embodiment is located directly below the wafer 4. In order to ensure that the first light signal Q after being blocked by the wafer 4 can be obtained, the size of the bearing surface of the first support seat 1 for placing the wafer 4 must be smaller than the size of the wafer 4 to be detected.

[0033] The light source transmitting module 2 of the present embodiment is used to transmit a light signal, and the light source transmitting module 2 has a light emitting surface of a preset area. Exemplarily, the light source transmitting module 2 of the present embodiment is used to transmit parallel light. In order to ensure that the signal receiving module 3 can receive the first light signal Q that is not blocked by the wafer 4 after being emitted by the light source transmitting module 2, the size of the light emitting surface of the light source transmitting module 2 is larger than the size of the wafer 4 to be detected. The present embodiment does not specifically limit the area of ​​the specific light emitting surface of the light source transmitting module 2. The light source transmitting module 2 of the present embodiment is a parallel light transmitter, which avoids the influence of stray light on the first light signal Q. The signal receiving module 3 of the present embodiment is used to receive the light signal after being blocked by the wafer 4. In order to ensure that the signal receiving module 3 can fully receive the first light signal Q that is not blocked by the wafer 4 after being emitted by the light source transmitting module 2, the size of the light signal receiving surface of the signal receiving module 3 is larger than the size of the light emitting surface of the light source transmitting module 2.

[0034] The signal receiving module 3 of this embodiment is arranged on the optical signal transmission path of the light source transmitting module 2, and the signal receiving module 3 is used to obtain the first optical signal Q after the optical signal is blocked by the wafer 4. Exemplarily, the signal receiving module 3 is a light source receiver, wherein the first optical signal Q is the luminous flux. When wafers 4 to be tested of different diameters are placed on the first support seat 1, the luminous flux of the light emitted by the light source transmitting module 2 after being blocked by the wafer 4 to be tested is different, that is, the value of the luminous flux received by the signal receiving module 3 is also different. This embodiment obtains the luminous flux through a light source receiver, wherein the light source receiver is a prior art, and the basic principle of the light source receiver obtaining the luminous flux is a prior art, which is not specifically described in this embodiment.

[0035] When the wafer 4 is not placed on the first support seat 1 of the measuring device of this embodiment, the light signal emitted by the light source transmitting module 2 received by the signal receiving module 3 is certain. When the wafer 4 is placed on the first support seat 1, the light signal emitted by the light source transmitting module 2 is blocked, and the light signal emitted by the light source transmitting module 2 received by the signal receiving module 3 will change. The above-mentioned first light signal is the light signal emitted by the light source transmitting module 2 after being blocked by the wafer 4 to be measured. When the wafers 4 to be measured with different diameters D are placed on the first support seat 1, the light signal emitted by the light source transmitting module 2 after being blocked by the wafer 4 to be measured is also different, that is, the value of the first light signal Q received by the signal receiving module 3 is also different. The processing module of this embodiment pre-stores the corresponding relationship between the wafer diameter D and the first light signal Q, so as to determine the diameter of the wafer 4 to be measured according to the corresponding relationship and the first light signal Q. Since the processing module of this embodiment pre-stores the corresponding relationship between the wafer diameter D and the first light signal Q, after the first light signal Q is determined, the wafer diameter D corresponding to the first light signal Q can be obtained. Exemplarily, the processing module pre-stores a plurality of correspondences between wafer diameters D and first optical signals Q, for example, n wafer diameters D and corresponding first optical signals Q, (D1, Q1), (D2, Q2), (D3, Q3), ... (Dn, Qn). After the wafer diameter measuring device obtains the first optical signal Q from the light source transmitting module 2, the diameter of the wafer 4 to be measured can be obtained according to the correspondence. Furthermore, the correspondence between the wafer diameter D and the first optical signal Q pre-stored in the processing module of this embodiment can be a fitting curve of the wafer diameter D and the first optical signal Q. The diameter of the wafer to be measured can be directly read according to the fitting curve and the first optical signal Q after being blocked by the wafer 4 to be measured obtained by the signal receiving module 3.

[0036] At present, the wafer diameter measurement method is to measure the wafer by a measurement personnel by means of a micrometer or optical projection. Relying on manual measurement, it is not only susceptible to human interference, but also the measurement result is easily affected by human factors such as the quality of the measurement personnel, work experience and measurement steps, resulting in low measurement accuracy, large deviation, and time-consuming and laborious. When measuring the wafer 4 in this embodiment, the wafer 4 is placed on the first support seat 1, and the first support seat 1 is arranged on the optical signal transmission path of the light source transmitting module 2. The optical signal of the light source transmitting module 2 is blocked by the wafer 4 to be measured, and the signal receiving module 3 obtains the first optical signal Q after the wafer 4 to be measured is blocked. The processing module determines the diameter of the wafer to be measured according to the correspondence between the pre-stored wafer diameter D and the first optical signal Q and the first optical signal Q. Compared with the existing wafer diameter measurement method, the wafer diameter measurement device can avoid the problem of low measurement accuracy caused by human factors affecting the measurement, and at the same time improves the measurement efficiency.

[0037] The wafer diameter measuring device provided in this embodiment includes a first support seat 1, a light source transmitting module 2, a signal receiving module 3 and a processing module. The first support seat 1 is used to place the wafer 4 to be measured, the light source transmitting module 2 is used to transmit light signals, and the light source transmitting module 2 has a light-emitting surface of a preset area. The first support seat 1 and the signal receiving module 3 are both arranged on the light signal transmission path of the light source transmitting module 2. The signal receiving module 3 is used to obtain the first light signal Q after being blocked by the wafer 4. The processing module is configured to pre-store the correspondence between the wafer diameter D and the first light signal Q, so as to determine the diameter of the wafer to be measured according to the correspondence and the first light signal Q. The first support seat 1 and the signal receiving module 3 of the wafer diameter measuring device are both arranged on the light signal transmission path of the light source transmitting module. When the measuring device is in use, the signal receiving module 3 receives the first light signal Q of the light signal emitted by the light source transmitting module 2 after being blocked by the wafer 4 to be measured. The diameter of the wafer 4 to be measured can be obtained according to the correspondence between the first light signal Q and the wafer diameter D pre-stored in the processing module. The wafer diameter measuring device improves the efficiency and accuracy of wafer diameter measurement.

[0038] Preferably, the light source transmitting module 2 is used to transmit parallel light. The light source transmitting module 2 of this embodiment adopts a parallel light transmitter, which can reduce the influence of inclined stray light on the optical signal. The parallel light transmitter belongs to the prior art, and the specific structure of the parallel light transmitter is not described in detail in this embodiment.

[0039] Furthermore, the light source transmitting module 2 has an annular light emitting surface 21, the inner diameter of the light emitting surface 21 is smaller than the diameter of the wafer 4 to be measured, and the outer diameter of the light emitting surface 21 is larger than the diameter of the wafer 4 to be measured. This embodiment adopts an annular light emitting surface 21, the inner diameter of the light emitting surface 21 is smaller than the diameter of the wafer 4 to be measured, and the outer diameter of the light emitting surface 21 is larger than the diameter of the wafer 4 to be measured. The light source transmitting module 2 of this embodiment adopts an annular light emitting surface 21, which can reduce the area of ​​the light source transmitting module to a certain extent and save energy. In the wafer diameter measuring device of this embodiment, when the wafer 4 is transmitted to the first support seat 1, part of the light signal emitted by the light source transmitting module 2 is blocked, and the other part of the light signal is emitted from all around the wafer 4 and received by the signal receiving module 3.

[0040] The first support seat 1 has a bearing surface 11 for placing the wafer 4. Preferably, the outer contour of the bearing surface 11 is circular, and the diameter of the bearing surface 11 is 1 / 2-2 / 3 of the diameter of the wafer. Since the outer contour of the wafer 4 is circular, the outer contour of the wafer bearing surface of the first support seat 1 of this embodiment is also circular. In order to ensure that the wafer 4 can be stably placed on the wafer bearing surface 11 of the first support seat 1, the diameter of the bearing surface 11 of this embodiment is 1 / 2-2 / 3 of the diameter of the wafer. Of course, in other embodiments, the diameter of the wafer bearing surface 11 may also be less than 1 / 2 of the wafer diameter. Since the signal receiving module 3 is used to receive the first optical signal after being blocked by the wafer 4, the size of the bearing surface 11 of the wafer 4 is smaller than the size of the wafer 4.

[0041] Furthermore, the center of the annular light-emitting surface is coaxially arranged with the center of the bearing surface 11. Because the wafer 4 is generally located at the center of the bearing surface 11 after being transferred to the bearing surface 11 of the first support seat 1. The center of the annular light-emitting surface of this embodiment is coaxially arranged with the center of the bearing surface 11, and after the wafer 4 is transferred to the bearing surface 11 of the first support seat 1, it can be ensured that the wafer 4 covers the inner diameter of the annular light-emitting surface.

[0042] Figure 2 For a schematic diagram of the structure of a wafer diameter measuring device provided by an embodiment of the present invention, please refer to Figure 2 In a specific embodiment, the wafer diameter measuring device further comprises a plurality of second support seats 5 arranged at intervals, the first support seat 1 and the light source emitting module 2 are arranged on the front of the second support seat 5, and the signal receiving module 3 is arranged on the back of the second support seat 5. The wafer diameter measuring device of this embodiment comprises a plurality of second support seats 5 arranged at intervals. Exemplarily, the measuring device of this embodiment is provided with a plurality of second support seats 5 in the vertical direction, and adjacent second support seats 5 are evenly arranged at intervals. This embodiment is provided with a plurality of second support seats 5, and the first support seat 1 and the light source emitting module 2 are arranged on the front of each second support seat 5, and the signal receiving module 3 is arranged on the back of the second support seat 5, so that the diameters of a plurality of wafers 4 can be measured simultaneously. Exemplarily, the processing module of this embodiment can be arranged one-to-one according to the number of signal receiving modules 3, or a plurality of signal receiving modules 3 can be connected to a processing module signal.

[0043] The wafer diameter measuring device of this embodiment can realize simultaneous measurement of multiple wafers 4 by setting multiple groups of repeated measurement structures, thereby further improving the efficiency of wafer diameter measurement.

[0044] Further, the projection area of ​​the second support seat 5 in the vertical direction is larger than the area of ​​the optical signal receiving surface of the signal receiving module 3. In this embodiment, the plurality of second support seats 5 are arranged at intervals in the vertical direction, and the first support seat 1 and the light source transmitting module 2 are arranged on the front of each second support seat 5. The projection area of ​​the second support seat 5 in the vertical direction is larger than the area of ​​the optical signal receiving surface of the signal receiving module 3. The second support seat 5 can play a certain light shielding role, thereby avoiding mutual interference of optical signals emitted by adjacent light source transmitting modules 2.

[0045] Preferably, the number of the second support bases 5 is greater than 3. In this embodiment, the number of the second support bases 5 is greater than 3, and the first support base 1 and the light source emission module 2 are arranged on the second support base 5. The number of the first support base 1 and the light source emission module 2 are both greater than 3. The wafer diameter measuring device of this embodiment can measure the diameter of at least three wafers 4 at the same time. The wafer diameter measuring device realizes batch measurement of wafer diameters, significantly shortens measurement time, reduces labor intensity, and improves overall production efficiency.

[0046] Furthermore, it also includes a support frame 6, the support frame 6 includes a base 61 and a support member 62 vertically fixed on the base 61, and the second support seats 5 are fixed on the support member 62 at intervals. The multiple second support seats 5 of this embodiment are all fixed on the support member 62, and the support member 62 is fixed on the base 61. The wafer diameter measuring device has a simple structure and is easy to manufacture. The wafer diameter measuring device can be moved as a whole by moving the support frame 6.

[0047] In the above embodiment, the processing module is configured to pre-store the correspondence between the wafer diameter D and the first optical signal Q, and the correspondence is a fitting curve between the wafer diameter D and the corresponding first optical signal Q. In this embodiment, a fitting curve between the wafer diameter D and the first optical signal Q is obtained based on the known wafer diameter D and the first optical signal Q corresponding thereto, and the wafer diameter D can be directly read based on the fitting curve when the first optical signal Q obtained by the signal receiving module 3 after being blocked by the wafer 4 to be tested is known.

[0048] This embodiment can convert discrete data points into continuous functions by fitting the curve, thereby improving the accuracy and reliability of the data.

[0049] The wafer diameter measuring device provided by the embodiment of the present invention includes a first support base, a light source transmitting module, a signal receiving module and a processing module. The first support base is used to place the wafer to be measured, the light source transmitting module is used to transmit a light signal, the light source transmitting module has a light-emitting surface of a preset area, the first support base and the signal receiving module are both arranged on the light signal transmission path of the light source transmitting module, the signal receiving module is used to obtain a first light signal after the light signal is blocked by the wafer to be measured, the processing module is configured to pre-store the correspondence between the wafer diameter and the first light signal, so as to determine the diameter of the wafer to be measured according to the correspondence and the first light signal. The first support base and the signal receiving module of the wafer diameter measuring device are both arranged on the light signal transmission path of the light source transmitting module. When the measuring device is in use, the signal receiving module receives the first light signal of the light signal emitted by the light source transmitting module after the light signal is blocked by the wafer, and the diameter of the wafer to be measured can be obtained according to the correspondence between the first light signal and the wafer diameter pre-stored in the processing module. The wafer diameter measuring device improves the efficiency and accuracy of wafer diameter measurement.

[0050] The second aspect of the present embodiment provides a wafer diameter measurement method, which is applied to the wafer diameter measurement device as described in the above embodiment, for example: the wafer diameter measurement device includes a first support seat 1, a light source transmitting module 2, a signal receiving module 3 and a processing module, the first support seat 1 is used to place the wafer 4 to be measured, the light source transmitting module 2 is used to transmit a light signal, the light source transmitting module 2 has a light-emitting surface with a preset area, the first support seat 1 and the signal receiving module are both arranged on the light signal transmission path of the light source transmitting module 2, the signal receiving module 3 is used to obtain a first light signal Q after the light signal is blocked by the wafer 4; the processing module is configured to pre-store the correspondence between the wafer diameter D and the first light signal Q, so as to determine the diameter of the wafer 4 to be measured according to the correspondence and the first light signal Q after the wafer 4 to be measured is blocked.

[0051] Figure 3 For a flow chart of the wafer diameter measurement method provided by an embodiment of the present invention, please refer to Figure 3 As shown, the measurement method includes: S101, obtaining a first light signal after the light signal emitted by the light source emission module is blocked by the wafer to be tested; Specifically, the wafer diameter measuring device described above is used, the wafer to be measured is placed on the first support seat 1, the wafer 4 to be measured blocks the light signal emitted by the light source transmitting module 2, and the signal receiving module obtains the first light signal Q after the wafer 4 to be measured is blocked. When the wafer 4 is not placed on the first support seat 1, the light signal emitted by the light source transmitting module 2 received by the signal receiving module 3 of this embodiment is certain. When the wafer 4 is placed on the first support seat 1, the light signal emitted by the light source transmitting module 2 is blocked, and the light signal emitted by the light source transmitting module 2 received by the signal receiving module 3 will change. The above-mentioned first light signal is the light signal emitted by the light source transmitting module 2 after being blocked by the wafer 4 to be measured. When wafers 4 to be measured with different diameters D are placed on the first support seat 1, the light signal emitted by the light source transmitting module 2 after being blocked by the wafer 4 to be measured is also different, that is, the value of the first light signal Q received by the signal receiving module 3 is also different.

[0052] S102: Acquire the diameter of the wafer to be measured according to a pre-stored correspondence between the wafer diameter and the first optical signal and the first optical signal.

[0053] Specifically, the diameter of the wafer 4 to be measured is obtained according to the first light signal Q of the light signal emitted by the light source transmitting module 2 after being blocked by the wafer 4 to be measured obtained by the signal receiving module 3 and the correspondence between the pre-stored wafer diameter D and the first light signal Q. Exemplarily, the correspondence in this embodiment is a fitting curve of the wafer diameter D and the first light signal Q. The wafer diameter D is directly read according to the fitting curve and the first light signal Q after being blocked by the wafer 4 to be measured obtained by the signal receiving module 3.

[0054] In this embodiment, the correspondence between the pre-stored wafer diameter D and the first optical signal Q is obtained in the following manner: prepare a plurality of wafers 4 of known diameters, and when the size of the wafer diameter D is known, place the wafer 4 on the first support seat 1 of the wafer diameter measuring device of this embodiment, and the signal receiving module 3 obtains the first optical signal Q after the wafer 4 is blocked. The signal receiving module 3 of the wafer diameter measuring device of this embodiment obtains the first optical signal Q after each wafer 4 is blocked. For example, the n known wafer diameters D and the corresponding first optical signals Q are respectively (D1, Q1), (D2, Q2), (D3, Q3)...(Dn, Qn). Common wafer specifications generally include 150 mm, 200 mm and 300 mm. For example, the device takes the measurement of a 300 mm wafer 4 as an example, and makes a plurality of wafers 4 with different diameters at intervals of 0.1 mm within a certain range (290 mm-310 mm). Then, the above-mentioned wafer diameter measuring device is used to obtain the first light signal Q after each wafer 4 with a known diameter is blocked, and the corresponding value of each known wafer diameter D and the first light signal Q is recorded. Of course, the corresponding relationship in this embodiment can also be a fitting curve of the wafer diameter D and the first light signal Q, and the wafer diameter D is directly read according to the fitting curve and the first light signal Q after being blocked by the wafer 4 to be measured obtained by the signal receiving module 3.

[0055] Exemplarily, in this embodiment, the first optical signal Q is a luminous flux. For example, when no wafer 4 is placed on the first support seat 1 of the measuring device of this embodiment, the luminous flux of the optical signal emitted by the light source transmitting module 2 received by the signal receiving module 3 is certain. When the wafer 4 is placed on the first support seat 1, the optical signal emitted by the light source transmitting module 2 is blocked, and the luminous flux received by the signal receiving module 3 will change. When wafers 4 to be measured with different diameters D are placed on the first support seat 1, the value of the luminous flux received by the signal receiving module 3 is also different. This embodiment determines the diameter of the wafer 4 to be measured by the pre-stored correspondence between the wafer diameter D and the luminous flux and the luminous flux of the optical signal emitted by the light source transmitting module after being blocked by the wafer to be measured.

[0056] The wafer diameter measurement method provided in an embodiment of the present invention includes obtaining a first light signal after the light signal emitted by the light source transmitting module is blocked by the wafer to be measured, and obtaining the diameter of the wafer to be measured according to the first light signal, the correspondence between the pre-stored wafer diameter and the first light signal. The wafer diameter measurement method can obtain the diameter of the wafer to be measured through the correspondence between the first light signal after the light signal emitted by the light source transmitting module is blocked by the wafer and the known wafer diameter, and the first light signal after the wafer to be measured is blocked obtained by the signal receiving module. The wafer diameter measurement method improves the efficiency and accuracy of wafer diameter measurement.

[0057] In the above description, the description with reference to the terms "an embodiment", "some embodiments", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0058] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may still be modified, or some or all of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wafer diameter measuring device, characterized in that: It includes a first support base, a light source transmitting module, a signal receiving module and a processing module; The first support base is used to place the wafer to be tested, the light source transmitting module is used to transmit a light signal, the light source transmitting module has a light-emitting surface of a preset area, the first support base and the signal receiving module are both arranged on the light signal transmission path of the light source transmitting module, and the signal receiving module is used to obtain the first light signal after the light signal is blocked by the wafer to be tested; the processing module is configured to pre-store the correspondence between the wafer diameter and the first light signal, so as to determine the diameter of the wafer to be tested based on the correspondence and the first light signal after the wafer to be tested is blocked.

2. The wafer diameter measuring device according to claim 1, characterized in that: The light source emission module is used to emit parallel light, and the first light signal is luminous flux.

3. The wafer diameter measuring device according to claim 2, characterized in that: The light signal emission direction of the light source emission module is the same as the orientation of the first support base.

4. The wafer diameter measuring device according to claim 3, characterized in that: The area of ​​the optical signal receiving surface of the signal receiving module is larger than the area of ​​the optical signal emitting surface of the light source emitting module.

5. The wafer diameter measuring device according to claim 3, characterized in that: The light source emitting module has an annular light emitting surface, the inner diameter of the light emitting surface is smaller than the diameter of the wafer to be measured, and the outer diameter of the light emitting surface is larger than the diameter of the wafer to be measured.

6. The wafer diameter measuring device according to claim 5, characterized in that: The first supporting seat has a bearing surface for placing a wafer, the outer contour of the bearing surface is circular, and the diameter of the bearing surface is 1 / 2-2 / 3 of the diameter of the wafer.

7. The wafer diameter measuring device according to claim 6, characterized in that: The center of the annular light-emitting surface is coaxially arranged with the center of the bearing surface.

8. The wafer diameter measuring device according to any one of claims 1 to 7, characterized in that: It also includes a plurality of second support bases that are spaced apart and arranged in parallel, wherein the first support base and the light source emitting module are arranged on the front side of the second support base, and the signal receiving module is arranged on the back side of the second support base.

9. The wafer diameter measuring device according to claim 8, characterized in that: The projection area of ​​the second support seat in the vertical direction is larger than the area of ​​the optical signal receiving surface of the signal receiving module.

10. The wafer diameter measuring device according to claim 8, characterized in that: The number of the second supporting seats is greater than 3.

11. The wafer diameter measuring device according to claim 8, characterized in that: It also includes a support frame, which includes a base and a support member vertically fixed on the base, and the second support seat is fixed on the support member at intervals.

12. The wafer diameter measuring device according to claim 8, characterized in that: The corresponding relationship is a fitting curve between a pre-stored wafer diameter and the corresponding first optical signal.

13. A method for measuring wafer diameter, characterized in that: include: Acquire a first optical signal after the optical signal emitted by the light source emission module is blocked by the wafer to be tested; The diameter of the wafer to be measured is acquired according to the pre-stored correspondence between the wafer diameter and the first optical signal and the first optical signal.

14. The wafer diameter measurement method according to claim 13, characterized in that: The first optical signal is light flux.

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