Heat dissipation base plate and semiconductor power module

Abstract

According to the heat dissipation bottom plate and the semiconductor power module provided by the invention, the accommodating groove is formed in the heat dissipation bottom plate and can be used for accommodating the ceramic substrate, so that the phenomena of position deviation and the like of the ceramic substrate are avoided. Besides, a plurality of protruding structures with the same height are arranged at the bottom of the accommodating groove, so that when the ceramic substrate is jointed with the bottom through the welding flux, the thickness of the welding flux in the middle can be ensured to be uniform, and the phenomenon of uneven heat dissipation is avoided. Moreover, the accommodating groove comprises an inclined side wall, and when the solder exists in the accommodating groove, an exhaust channel can be provided through the inclined side wall, thereby facilitating the exhaust of gas in the solder, and avoiding the defects that the service life of the device is affected, the heat dissipation capability is reduced, and the like.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a heat dissipation base plate and a semiconductor power module. Background Art

[0002] In existing semiconductor power module groups, the heat energy of the crystal chip is transferred to the heat sink through the ceramic substrate and the bottom plate below to achieve heat dissipation. The ceramic substrate and the bottom plate need to be joined by solder, such as tin. Since the solder will be liquid in some environments, the thickness of the solder between the ceramic substrate and the bottom plate is unstable, which causes the ceramic substrate on the bottom plate to tilt, such as Figure 1 As shown in , and when the thickness of the solder below is uneven, the heat dissipation capacity will decrease at the thicker location, which will lead to a shortened life of the crystal chip.

[0003] In addition, when the ceramic substrate is bonded to the base plate, the liquid solder may cause the ceramic substrate to shift, such as Figure 2 As shown in , a skewed ceramic substrate will reduce the product yield. Summary of the invention

[0004] The objects of the present invention include, for example, providing a heat dissipation base plate and a semiconductor power module, which can avoid the position deviation of the ceramic substrate, ensure the uniform thickness of the solder and help to discharge the gas in the solder.

[0005] The embodiments of the present invention can be implemented as follows:

[0006] In a first aspect, the present invention provides a heat dissipation base plate, wherein the heat dissipation base plate is in a block structure;

[0007] The heat dissipation base plate includes a first surface and a second surface opposite to the first surface;

[0008] A receiving groove is provided on the first surface of the heat dissipation bottom plate, and a plurality of protruding structures are provided at the bottom of the receiving groove, each of the protruding structures has the same height, and the plurality of protruding structures are distributed at the edge of the bottom of the receiving groove;

[0009] The side walls of the accommodating groove include vertical side walls in a vertical state and inclined side walls in an inclined state, and the area of ​​the opening of the accommodating groove is larger than the area of ​​the bottom of the accommodating groove.

[0010] In an optional embodiment, the length of the inclined side wall in the side wall of the accommodating groove accounts for 50%-90% of the total length of the side wall.

[0011] In an optional embodiment, the inclined side wall of the accommodating groove includes a first segment close to the bottom of the accommodating groove and a second segment close to the opening of the accommodating groove;

[0012] The side wall at the first section is in an inclined state, and the side wall at the second section is in a vertical state.

[0013] In an optional embodiment, each of the protruding structures is a cone-shaped structure, a columnar structure or a circular protrusion.

[0014] In an optional embodiment, the area of ​​the projection area formed by projecting each of the protruding structures onto the bottom of the accommodating groove is 0.01 mm 2 -1mm 2 .

[0015] In an optional implementation, the thickness of the heat dissipation base plate is 2 mm-4 mm, and the depth of the accommodating groove is 0.5 mm-0.9 mm.

[0016] In an optional embodiment, the heat dissipation base plate is further provided with a plurality of fixing holes, and the plurality of fixing holes are respectively located at edge positions of the heat dissipation base plate.

[0017] In an optional embodiment, there are a plurality of accommodating grooves, and the plurality of accommodating grooves are arranged on the first surface of the heat dissipation base plate, and every two adjacent accommodating grooves are arranged at intervals.

[0018] In a second aspect, the present invention provides a semiconductor power module, including a ceramic substrate, a crystal chip, leads, pins, a housing, and a heat dissipation base plate as described in any one of the aforementioned embodiments;

[0019] The outer shell cover is disposed on the heat dissipation bottom plate to form a receiving space with the heat dissipation bottom plate, and the receiving groove of the heat dissipation bottom plate is located in the receiving space;

[0020] The ceramic substrate is accommodated in the accommodating groove of the heat dissipation base plate;

[0021] The crystal chip is arranged on the ceramic substrate;

[0022] The pins are arranged on the housing and extend out of the housing;

[0023] The lead wire is connected between the crystal chip and the pin.

[0024] In an optional embodiment, the semiconductor power module further comprises a bonding metal;

[0025] The ceramic substrate is a plate-shaped structure, comprising a first surface, a second surface opposite to the first surface, and side surfaces surrounding the first surface and the second surface;

[0026] The ceramic substrate is accommodated in the accommodating groove through the bonding metal, and the first surface of the ceramic substrate abuts against the top of the protruding structure, and the side surface of the ceramic substrate abuts against the vertical side wall of the accommodating groove in a vertical state.

[0027] The beneficial effects of the embodiments of the present invention include, for example:

[0028] The present application provides a heat dissipation base plate and a semiconductor power module. The heat dissipation base plate is a block structure, and the heat dissipation base plate includes a first surface and a second surface opposite to the first surface. A receiving groove is provided on the first surface of the heat dissipation base plate, and a plurality of protrusion structures are provided at the bottom of the receiving groove. The heights of the protrusion structures are the same, and the plurality of protrusion structures are distributed at the edge of the bottom of the receiving groove. The side walls of the receiving groove of the heat dissipation base plate include vertical side walls in a vertical state and inclined side walls in an inclined state.

[0029] In this solution, a receiving groove is provided on the heat dissipation bottom plate, which can be used to receive the ceramic substrate, thereby preventing the ceramic substrate from being displaced. In addition, a plurality of protruding structures of the same height are provided at the bottom of the receiving groove, which can ensure that the thickness of the solder in the middle is uniform when the ceramic substrate is joined to the bottom through solder, thereby preventing uneven heat dissipation. Furthermore, the receiving groove includes an inclined side wall, and when solder is present in the receiving groove, an exhaust channel can be provided through the inclined side wall, thereby facilitating the exhaust of gas in the solder. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 It is a side view of a ceramic substrate, solder and bottom plate in the prior art;

[0032] Figure 2 It is a top view of a ceramic substrate and a bottom plate in the prior art;

[0033] Figure 3 A schematic diagram of the structure of the heat dissipation base plate provided in an embodiment of the present application;

[0034] Figure 4 A schematic structural diagram of a heat dissipation base plate provided in an embodiment of the present application from another perspective;

[0035] Figure 5 for Figure 3 A partial enlarged view of the middle part A;

[0036] Figure 6 A schematic diagram of the cooperation between the heat dissipation base plate and the ceramic substrate provided in an embodiment of the present application;

[0037] Figure 7 A cross-sectional schematic diagram of a heat dissipation base plate provided in an embodiment of the present application;

[0038] Figure 8 for Figure 7 A partial enlarged view of the middle part B;

[0039] Fig. 9 A schematic diagram of the structure of a semiconductor power module provided in an embodiment of the present application.

[0040] Icons: 10-heat dissipation base plate; 111-first surface; 112-second surface; 113-accommodating groove; 1131-vertical side wall; 1132-inclined side wall; 11321-first segment; 11322-second segment; 114-protruding structure; 115-fixing hole; 20-ceramic substrate; 30-crystal chip; 40-lead; 50-pin; 60-housing; 70-heat sink; 71-connection hole; 80-joining metal; 90-connector. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0042] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0044] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear to indicate an orientation or position relationship, they are based on the orientation or position relationship shown in the accompanying drawings, or are the orientation or position relationship in which the product of the invention is usually placed when used. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0045] In addition, the terms "first", "second", etc., if used, are only used to distinguish descriptions and cannot be understood as indicating or implying relative importance. Terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0046] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0047] See also Figure 3 , is a schematic diagram of the structure of the heat dissipation base plate 10 provided in the embodiment of the present application, and the heat dissipation base plate 10 is a block structure. Figure 4 The heat dissipation base plate 10 includes a first surface 111 and a second surface 112 opposite to the first surface 111. An accommodating groove 113 is provided on the first surface 111 of the heat dissipation base plate 10, and a plurality of protruding structures 114 are provided at the bottom of the accommodating groove 113. The heights of the protruding structures 114 are the same, and the plurality of protruding structures 114 are distributed at the edge of the bottom of the accommodating groove 113.

[0048] Please refer to Figure 5 The side wall of the accommodating groove 113 includes a vertical side wall 1131 in a vertical state and an inclined side wall 1132 in an inclined state, and the area of ​​the opening of the accommodating groove 113 is larger than the area of ​​the bottom of the accommodating groove 113.

[0049] The second surface 112 of the heat dissipation base plate 10 may be a flat surface, or may be provided with a plurality of protruding columns, so as to be immersed in liquid to achieve the heat dissipation function.

[0050] In this embodiment, the heat dissipation base plate 10 is a block structure with a rectangular or approximately rectangular cross-sectional shape and a certain thickness. The two larger surfaces of the heat dissipation base plate 10 are the first surface 111 and the second surface 112. In addition, the surfaces surrounding the first surface 111 and the second surface 112 are the side surfaces.

[0051] Based on the first surface 111 of the heat dissipation base plate 10, the heat dissipation base plate 10 can be etched, and the etching direction is from the first surface 111 to the second surface 112, so as to form a receiving groove 113. The receiving groove 113 can be used to receive the ceramic substrate in the semiconductor power module, so the size of the receiving groove 113 is adapted to the size of the ceramic substrate.

[0052] The formed accommodating groove 113 includes a bottom, a side wall and an opening, wherein the opening is opposite to the bottom, and the side wall is arranged around the bottom.

[0053] In this embodiment, a plurality of protruding structures 114 are provided at the bottom of the accommodating groove 113 . The material of each protruding structure 114 can be the same as that of the heat dissipation base plate 10 , or other materials can be used to form the protruding structure 114 . Specifically, this embodiment does not limit this.

[0054] Each protruding structure 114 may be manufactured separately and then bonded to the bottom of the accommodating groove 113 by bonding or the like, or may be formed by depositing metal at the bottom of the groove using a deposition process, or may be formed during the process of etching the accommodating groove 113, and this embodiment does not impose any specific limitations.

[0055] In this embodiment, the heights of the protruding structures 114 are the same. Since the receiving groove 113 can be used to receive the ceramic substrate, the ceramic substrate will be located above the protruding structure 114 when received in the receiving groove 113. Figure 6 As shown, the protruding structure 114 plays the role of supporting the ceramic substrate. The same height of each protruding structure 114 can ensure that the upper ceramic substrate is in a horizontal state. Therefore, the spacing distance between each position of the ceramic substrate and the bottom of the receiving groove 113 below is consistent, that is, the spacing distance between the ceramic substrate and the bottom of the receiving groove 113 is uniform. When the ceramic substrate is subsequently joined to the bottom of the receiving groove 113 by solder, the thickness of the solder between the two can be kept uniform, thereby avoiding the inclination of the ceramic substrate caused by uneven solder thickness and the defect of poor heat dissipation effect in the thicker part caused by uneven thickness.

[0056] In this embodiment, multiple protruding structures 114 are distributed at the edge positions of the bottom of the accommodating groove 113. For example, when the bottom of the accommodating groove 113 is rectangular, multiple protruding structures 114 can be distributed at the four corners of the rectangle, so that the ceramic substrate can be well supported and ensured to be in a horizontal state.

[0057] In addition, in this embodiment, the side walls of the accommodating groove 113 include a vertical side wall 1131 and an inclined side wall 1132 , wherein the inclination angle of the inclined side wall 1132 is greater than 90 degrees, so that the area of ​​the opening of the accommodating groove 113 is greater than the area of ​​the bottom of the accommodating groove 113 .

[0058] When the ceramic substrate is accommodated in the accommodating groove 113, solder is needed to achieve the bonding between the two, and there may be some gas in the solder. Based on the exhaust channel provided by the inclined side wall 1132, during the welding process, the gas in the solder can be smoothly discharged through the exhaust channel provided by the inclined side wall 1132 to avoid it remaining under the ceramic substrate, which affects the life of the module and causes the defect of poor heat dissipation effect.

[0059] The heat dissipation base plate 10 provided in this embodiment has a receiving groove 113 on the heat dissipation base plate 10, which can be used to receive the ceramic substrate, thereby preventing the ceramic substrate from being offset. In addition, the bottom of the receiving groove 113 is provided with a plurality of protruding structures 114 of the same height, which can ensure that the thickness of the solder in the middle is uniform when the ceramic substrate is joined to the bottom through solder, thereby preventing uneven heat dissipation and preventing the problem of the ceramic substrate being tilted. Furthermore, the receiving groove 113 includes an inclined side wall 1132, and when solder is present in the receiving groove 113, an exhaust channel can be provided through the inclined side wall 1132, thereby facilitating the exhaust of gas in the solder, thereby preventing the life span and heat dissipation effect from being affected.

[0060] Since the ceramic substrate in the power module generally includes multiple pieces, accordingly, Figure 3 As shown in FIG. 1 , in this embodiment, there are a plurality of accommodating grooves 113 , and the plurality of accommodating grooves 113 are arranged on the first surface 111 of the heat dissipation base plate 10 , and every two adjacent accommodating grooves 113 are arranged at intervals.

[0061] The plurality of accommodating grooves 113 are arranged at intervals along the length direction of the first surface 111 of the heat dissipation base plate 10 , wherein the length direction is the direction of the longer side of the first surface 111 of the heat dissipation base plate 10 .

[0062] The number of the accommodating grooves 113 is consistent with the number of the ceramic substrates, so as to accommodate multiple ceramic substrates in the power module. Every two adjacent accommodating grooves 113 are arranged at intervals, so as to avoid the problem of collision between the ceramic substrates accommodated in the two adjacent accommodating grooves 113.

[0063] In this embodiment, the thickness of the heat dissipation base plate 10 is 2 mm-4 mm, and the depth of the accommodating groove 113 is 0.5 mm-0.9 mm.

[0064] By etching a portion of the heat dissipation base plate 10 to form the receiving groove 113, the thickness of the heat dissipation base plate 10 at the location of the receiving groove 113 becomes thinner, thereby reducing thermal resistance and improving heat dissipation capacity. However, other locations of the heat dissipation base plate 10 where the receiving groove 113 is not formed still maintain the thickness of a general product, thereby not reducing the overall structural strength of the heat dissipation base plate 10.

[0065] In this embodiment, each protruding structure 114 disposed at the bottom of the accommodating groove 113 is a cone-shaped structure, a columnar structure or a circular protrusion. For example, it can be a cone structure with a flat or arc-shaped top. Setting the top as a flat or arc-shaped surface can better support the ceramic substrate and increase the support area. Alternatively, it can be a columnar structure with a cross-sectional shape of a circle, an ellipse, a square, a rectangle, etc. In addition, it can also be a hemispherical or spherical circular protrusion.

[0066] The area of ​​the projection area formed by each protruding structure 114 projecting onto the bottom of the accommodating groove 113 is 0.01 mm 2 -1mm 2 In this embodiment, it is avoided to set the protruding structure 114 to be too small, for example, the area of ​​the projection area is less than 0.01mm 2 , thus affecting the bearing capacity of the ceramic substrate. On the other hand, it is avoided to set the protruding structure 114 larger, for example, the area of ​​the projection area is larger than 1mm 2 , which occupies a large space and affects the filling of solder.

[0067] In order to ensure that sufficient exhaust channels are provided, in this embodiment, the length of the inclined side wall 1132 in the side wall of the accommodating groove 113 can account for 50% to 90% of the total length of the side wall, so that the purpose of effectively exhausting the gas in the solder can be achieved.

[0068] In this embodiment, the shape of the accommodating groove 113 can be a polygon, such as a quadrilateral, hexagon or octagon, etc. Specifically, the shape of the accommodating groove 113 needs to be compatible with the shape of the ceramic substrate. In order to ensure that the gas in the solder can be discharged smoothly in all directions, the side walls on multiple sides of the accommodating groove 113 have at least one inclined side wall 1132 in an inclined state, for example, the side walls on the four sides each have at least one inclined side wall 1132. In this way, the gas in the solder can be discharged in multiple directions through the exhaust channel provided by the inclined side wall 1132, effectively avoiding the influence caused by gas residue.

[0069] In addition, in this embodiment, the vertical sidewall 1131 can be disposed at the middle position of each side of the receiving groove 113 or at both ends, and there is no specific limitation. For example, in one implementation, the sidewalls of the receiving groove 113 adjacent to each corner are vertical sidewalls 1131 in a vertical state. The vertical sidewalls 1131 are disposed at the adjacent positions of each corner, and after the ceramic substrate is accommodated in the receiving groove 113, the vertical sidewalls 1131 can be used to limit the ceramic substrate, thereby preventing the ceramic substrate from being offset in various directions.

[0070] In this embodiment, in a possible implementation, the inclined side wall 1132 can be designed to be in an inclined state on the entire surface, that is, the entire extension surface of the inclined side wall 1132 from the bottom of the accommodating groove 113 to the opening of the accommodating groove 113 is in an inclined state. In this way, the gas in the solder below can be discharged directly from the extension direction.

[0071] In addition, in another possible implementation, please refer to Figure 7 and Figure 8 The inclined side wall 1132 of the accommodating groove 113 includes a first segment 11321 close to the bottom of the accommodating groove 113 and a second segment 11322 close to the opening of the accommodating groove 113, wherein the side wall at the first segment 11321 is inclined and the side wall at the second segment 11322 is vertical.

[0072] In this implementation, from the bottom of the accommodating groove 113 to the opening of the accommodating groove 113, the side wall is first inclined to obtain the first segment 11321, and then becomes vertical to obtain the second segment 11322. It should be noted that the first segment 11321 and the second segment 11322 are both inclined side walls 1132, which are only virtualized for the convenience of distinction.

[0073] In this implementation, the gas in the solder below can be first discharged in the extension direction through the exhaust channel provided by the first segment 11321, and then discharged in the direction of the opening of the accommodating groove 113 through the exhaust channel provided by the second segment 11322. In this way, the direction of gas exhaust can be changed based on demand through this implementation.

[0074] In this embodiment, a plurality of fixing holes 115 are further provided on the heat dissipation base plate 10, and the plurality of fixing holes 115 are respectively located at the edge positions of the heat dissipation base plate 10. For example, the fixing holes 115 can be provided at positions of the heat dissipation base plate 10 where the accommodating grooves 113 are not provided, and at the positions of the four corners of the heat dissipation base plate 10.

[0075] During implementation, the power module needs to be connected to the radiator to achieve heat dissipation through the radiator, so a plurality of connection holes may be provided on the radiator, and the plurality of connection holes may correspond one to one with the plurality of fixing holes 115 on the heat dissipation base plate 10. In this way, the heat dissipation base plate 10 may be connected to the radiator through the connector, the fixing holes 115 and the connection holes, thereby connecting the power module to the radiator.

[0076] The heat dissipation base plate 10 provided in this embodiment is used to accommodate the ceramic substrate by providing an accommodating groove 113 to avoid the problem of positional displacement of the ceramic substrate. In addition, a plurality of protruding structures 114 of the same height are provided at the bottom of the accommodating groove 113 to ensure that the thickness of the solder in the middle is uniform when the ceramic substrate is joined to the bottom through solder, thereby avoiding uneven heat dissipation and tilting of the ceramic substrate. Furthermore, the accommodating groove 113 includes an inclined side wall 1132, and the gas in the solder below can be effectively discharged through the exhaust channel provided by the inclined side wall 1132.

[0077] Furthermore, since the accommodating groove 113 is provided, the thickness at the accommodating groove 113 is thinned, thereby reducing thermal resistance and improving heat dissipation capacity, while the thickness of other areas of the heat dissipation base plate 10 except the accommodating groove 113 can still maintain the thickness of a general product, therefore, the structural strength of the heat dissipation base plate 10 will not be reduced.

[0078] See also Fig. 9 The present application also provides a semiconductor power module, which includes a ceramic substrate 20, a crystal chip 30, a lead 40, a pin 50, a housing 60, and a heat dissipation base plate 10 in any one of the above embodiments. The semiconductor power module is connected to a heat sink 70 to achieve heat dissipation through the heat sink 70.

[0079] The housing 60 is covered on the heat dissipation base plate 10 to form a receiving space with the heat dissipation base plate 10, and the receiving groove 113 of the heat dissipation base plate 10 is located in the receiving space. The ceramic substrate 20 is received in the receiving groove 113 of the heat dissipation base plate 10, the crystal chip 30 is arranged on the ceramic substrate 20, the pin 50 is arranged on the housing 60 and extends out of the housing 60, and the lead 40 is connected between the crystal chip 30 and the pin 50. In addition, the heat dissipation base plate 10 is arranged on the heat sink 70.

[0080] In this embodiment, the outer shell 60 is a plastic shell with an opening. The outer shell 60 is covered on the periphery of the heat dissipation base plate 10 through the opening thereon to enclose the heat dissipation base plate 10 to form an accommodating space.

[0081] The accommodating groove 113 formed on the first surface 111 of the heat dissipation base plate 10 is located in the accommodating space, and the second surface 112 of the heat dissipation base plate 10 is in contact with the heat sink 70 below.

[0082] The ceramic substrate 20 is accommodated in the accommodating groove 113 of the heat dissipation base plate 10, and the crystal chip 30 is arranged on the ceramic substrate 20. The crystal chip 30 can be arranged on the ceramic substrate 20 by bonding metal 80, such as solder. The lead 40 can be a metal wire or a metal sheet, and the current on the crystal chip 30 can be led out through the lead 40 and through the pin 50.

[0083] In this embodiment, the semiconductor power module further includes a bonding metal 80, which may be solder, such as tin. The ceramic substrate 20 is a plate-like structure, and includes a first surface, a second surface opposite to the first surface, and side surfaces surrounding the first surface and the second surface.

[0084] The ceramic substrate 20 is accommodated in the accommodating groove 113 through the bonding metal 80 (not shown in the figure) and the first surface of the ceramic substrate 20 abuts the top of the protruding structure 114 at the bottom of the accommodating groove 113, and the side wall of the ceramic substrate 20 abuts the vertical side wall 1131 of the accommodating groove 113 in a vertical state.

[0085] In addition, a plurality of fixing holes 115 are provided at the edge of the heat dissipation base plate 10, and connection holes 71 are provided on the radiator 70 below at positions corresponding to the fixing holes 115. The heat dissipation base plate 10 can be connected to the radiator 70 by connecting parts 90, such as screws.

[0086] In the semiconductor power module provided in this embodiment, the ceramic substrate 20 is arranged in the receiving groove 113 of the heat dissipation base plate 10. The protruding structure 114 arranged at the bottom of the receiving groove 113 can support the ceramic substrate 20 and ensure that the thickness of the bonding metal 80 between the ceramic substrate 20 and the bottom is uniform, thereby avoiding the problem of uneven heat dissipation and the problem of the ceramic substrate 20 being tilted. The side wall of the heat dissipation base plate 10 includes an inclined side wall 1132 and a vertical side wall 1131. The vertical side wall 1131 can limit the ceramic substrate 20 to avoid the position deviation of the ceramic substrate 20, while the inclined side wall 1132 can help to discharge the gas in the bonding metal 80 below through the exhaust channel to ensure the product life.

[0087] The semiconductor power module provided in this embodiment includes the same structure and beneficial effects as the heat dissipation base plate 10 in the above embodiment. The structure and beneficial effects of the heat dissipation base plate 10 have been described in detail in the above embodiment and will not be repeated here.

[0088] In summary, the heat dissipation base plate 10 and the semiconductor power module provided in the embodiment of the present application are block-shaped structures, and the heat dissipation base plate 10 includes a first surface 111 and a second surface 112 opposite to the first surface 111. An accommodating groove 113 is provided on the first surface 111 of the heat dissipation base plate 10, and a plurality of protruding structures 114 are provided at the bottom of the accommodating groove 113. The heights of the protruding structures 114 are the same, and the plurality of protruding structures 114 are distributed at the edge of the bottom of the accommodating groove 113. The side walls of the accommodating groove 113 of the heat dissipation base plate 10 include a vertical side wall 1131 in a vertical state and an inclined side wall 1132 in an inclined state.

[0089] In this solution, a receiving groove 113 is provided on the heat dissipation base plate 10, which can be used to receive the ceramic substrate 20, thereby preventing the ceramic substrate 20 from being offset. In addition, a plurality of protruding structures 114 of the same height are provided at the bottom of the receiving groove 113, which can ensure that the thickness of the solder in the middle is uniform when the ceramic substrate 20 is joined to the bottom through solder, thereby preventing uneven heat dissipation. Furthermore, the receiving groove 113 includes an inclined side wall 1132, which can provide an exhaust channel through the inclined side wall 1132 when solder is present in the receiving groove 113, thereby facilitating the exhaust of gas in the solder.

[0090] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A heat dissipation base plate, characterized in that: The heat dissipation base plate is in a block structure; The heat dissipation base plate includes a first surface and a second surface opposite to the first surface; A receiving groove is provided on the first surface of the heat dissipation bottom plate, and a plurality of protruding structures are provided at the bottom of the receiving groove, each of the protruding structures has the same height, and the plurality of protruding structures are distributed at the edge of the bottom of the receiving groove; The side walls of the accommodating groove include vertical side walls in a vertical state and inclined side walls in an inclined state, and the area of ​​the opening of the accommodating groove is larger than the area of ​​the bottom of the accommodating groove.

2. The heat dissipation base plate according to claim 1, characterized in that: The length of the inclined side wall in the side wall of the accommodating groove accounts for 50%-90% of the total length of the side wall.

3. The heat dissipation base plate according to claim 1, characterized in that: The inclined side wall of the accommodating groove includes a first segment close to the bottom of the accommodating groove and a second segment close to the opening of the accommodating groove; The side wall at the first section is in an inclined state, and the side wall at the second section is in a vertical state.

4. The heat dissipation base plate according to claim 1, characterized in that: Each of the protruding structures is a cone-shaped structure, a columnar structure or a circular protrusion.

5. The heat dissipation base plate according to claim 4, characterized in that: The area of ​​the projection area formed by each protruding structure projecting onto the bottom of the accommodating groove is 0.01 mm 2 -1mm 2 .

6. The heat dissipation base plate according to claim 1, characterized in that: The thickness of the heat dissipation base plate is 2mm-4mm, and the depth of the accommodating groove is 0.5mm-0.9mm.

7. The heat dissipation base plate according to claim 1, characterized in that: The heat dissipation bottom plate is also provided with a plurality of fixing holes, and the plurality of fixing holes are respectively located at the edge positions of the heat dissipation bottom plate.

8. The heat dissipation base plate according to claim 1, characterized in that: There are a plurality of accommodating grooves, and the plurality of accommodating grooves are arranged on the first surface of the heat dissipation base plate, and every two adjacent accommodating grooves are arranged at intervals.

9. A semiconductor power module, characterized in that: It comprises a ceramic substrate, a crystal chip, leads, pins, a housing and the heat dissipation base plate according to any one of claims 1 to 8; The outer shell cover is disposed on the heat dissipation bottom plate to form a receiving space with the heat dissipation bottom plate, and the receiving groove of the heat dissipation bottom plate is located in the receiving space; The ceramic substrate is accommodated in the accommodating groove of the heat dissipation base plate; The crystal chip is arranged on the ceramic substrate; The pins are arranged on the housing and extend out of the housing; The lead wire is connected between the crystal chip and the pin.

10. The semiconductor power module according to claim 9, characterized in that: The semiconductor power module further includes a bonding metal; The ceramic substrate is a plate-like structure, comprising a first surface, a second surface opposite to the first surface, and side surfaces surrounding the first surface and the second surface; the ceramic substrate is accommodated in the accommodating groove through the bonding metal and the first surface of the ceramic substrate abuts against the top of the protruding structure, and the side surface of the ceramic substrate abuts against the vertical side wall of the accommodating groove in a vertical state.

Images