A semiconductor laser

Abstract

The application discloses a semiconductor laser, relates to the technical field of lasers, and comprises a carrier, a plurality of light-emitting groups, a beam combining unit and a fiber unit; the plurality of light-emitting groups are installed on the carrier and are arrayed along a first horizontal straight line direction; each light-emitting group comprises a first light-emitting module and a second light-emitting module; the first light-emitting module and the second light-emitting module are distributed along a second horizontal straight line direction perpendicular to the first horizontal straight line direction and are distributed up and down in a vertical direction; the design effectively shortens the space occupation in the second horizontal straight line direction, the arrangement of various components of the light-emitting module is more compact, the space utilization is higher, and thus the volume of the laser is effectively reduced. Meanwhile, the first light-emitting chip of the first light-emitting module and the second light-emitting chip of the second light-emitting module are oppositely arranged, which is beneficial to rapid heat dissipation.

Description

Technical Field

[0001] This application relates to the field of laser technology, and more particularly to a semiconductor laser. Background Technology

[0002] Semiconductor lasers are characterized by small size, low power consumption, high electro-optical conversion efficiency, and high reliability. They are widely used in industrial processing, optical display, medical aesthetics, optical communication, optical sensing and other fields. They can also be used as pump sources for fiber lasers and solid-state lasers.

[0003] Industrial processing and pump source applications place high demands on the optical power and size of semiconductor lasers. The need for high power necessitates an increase in the number of laser chip units, posing a greater challenge to size optimization. The traditional array arrangement along the first linear direction results in the laser occupying a large space in that direction, severely failing to meet the high requirements for size optimization. Furthermore, since the laser beam, after collimation by the slow-axis collimator, still has a certain divergence angle (approximately 0.5°), this arrangement increases the distance between the laser chip units furthest from the beam combiner and the combiner, leading to a deterioration in the beam spot quality on the combiner, affecting the beam combining effect and fiber coupling efficiency. To address these issues, a proposed method divides the laser chip units into two rows and arranges them opposite each other along a second linear direction perpendicular to the first linear direction. While this reduces the space occupied by the laser in the first linear direction, it significantly increases the space occupied in the second linear direction, resulting in low space utilization and an increased overall laser size, still falling short of the desired size optimization effect. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a semiconductor laser that can improve space utilization, effectively reduce laser size, alleviate the problem of decreased coupling efficiency caused by the deterioration of the spot quality of the light after slow-axis collimation of the far-end laser chip on the beam combining device, and achieve a better heat dissipation effect.

[0005] To achieve the above-mentioned technical objectives, this application provides a semiconductor laser, including a carrier, a plurality of light-emitting groups, a beam combining unit, and an optical fiber unit;

[0006] Several of the light-emitting groups are mounted on the carrier and distributed in an array along a first horizontal straight line direction;

[0007] Each of the light-emitting groups includes a first light-emitting module and a second light-emitting module;

[0008] The first light-emitting module and the second light-emitting module are distributed along a second horizontal straight line direction perpendicular to the first horizontal straight line direction, and are distributed vertically upwards and downwards.

[0009] The first light-emitting module includes a first light-emitting chip, a first reflector, and a first slow-axis collimating lens;

[0010] The first light-emitting chip, the first slow-axis collimating lens, and the first reflector are arranged sequentially along the second horizontal straight line direction;

[0011] The second light-emitting module includes a second light-emitting chip, a second reflector, and a second slow-axis collimating lens;

[0012] The second light-emitting chip, the second slow-axis collimating lens, and the second reflector are arranged sequentially along the second horizontal straight line direction;

[0013] The first light-emitting chip and the second light-emitting chip are positioned opposite each other, and their light emission directions are opposite.

[0014] The beam combining unit and the optical fiber unit are mounted on the carrier, and the beam combining unit is used to guide the light beam emitted from the first reflector and the second reflector to the optical fiber unit.

[0015] Furthermore, the second light-emitting module is positioned above the first light-emitting module;

[0016] The carrier is provided with a first support, a second support, and a third support in sequence along the second horizontal straight line direction;

[0017] The first light-emitting chip is disposed between the second support and the third support;

[0018] The first reflector is disposed between the first support and the second support;

[0019] The first slow-axis collimating lens is disposed between the first support and the second support, or between the second support and the third support;

[0020] The second light-emitting chip is disposed on the first support;

[0021] The second slow-axis collimating lens is mounted on the second support;

[0022] The second reflector is mounted on the third support;

[0023] The second support is provided with a through hole for the light beam emitted by the first light-emitting chip to pass through.

[0024] Furthermore, the first support, the second support, and the third support are integrally formed with the carrier.

[0025] Furthermore, the first support, the second support, and the third support are integrally connected to the bottom of the second light-emitting chip, the bottom of the second slow-axis collimating lens, and the bottom of the second reflector, respectively.

[0026] Furthermore, the height of the upper edge of the first reflector is less than the light-emitting height of the second light-emitting chip.

[0027] Furthermore, the first light-emitting chips of adjacent light-emitting groups are spaced apart;

[0028] The second light-emitting chips of adjacent light-emitting groups are spaced apart.

[0029] Furthermore, the beam combining unit includes a coupler, a polarization beam combiner, a first light guide group, and a second light guide group;

[0030] The optical fiber unit, the coupler, and the polarization combiner are distributed sequentially along the first horizontal straight line direction;

[0031] The first light guide group is used to guide the light beam emitted from the first reflector to the polarization beam combiner;

[0032] The second light guide group is used to guide the light beam emitted from the second reflector to the polarization combiner.

[0033] Furthermore, the optical fiber unit, the coupler, and the polarization combiner are disposed on one side of the light-emitting group along the second horizontal straight line direction;

[0034] The first light guide group includes a third reflector and a fourth reflector;

[0035] The third reflector guides the light beam emitted from the first reflector to the fourth reflector;

[0036] The fourth mirror guides the light beam emitted from the third mirror to the polarization beam combiner;

[0037] The second light guide group includes a fifth reflecting mirror and a parallelogram prism;

[0038] The fifth reflecting mirror guides the light beam emitted from the second reflecting mirror to the parallelogram prism;

[0039] The parallelogram prism guides the beam emitted from the fifth reflector to the polarization combiner.

[0040] As can be seen from the above technical solutions, the semiconductor laser designed in this application has the following beneficial effects:

[0041] 1. The first and second light-emitting modules of the light-emitting group are arranged along the second horizontal straight line and distributed vertically. This design effectively shortens the space occupied in the second horizontal straight line, making the arrangement of the various components of the light-emitting module more compact and the space utilization rate higher, thereby effectively reducing the size of the laser.

[0042] 2. The more compact arrangement of the components of the light-emitting module also reduces the space occupied in the first horizontal straight direction. The distance between the light-emitting chip far from the beam combining unit and the beam combining unit is smaller, which helps to alleviate the problem of reduced coupling efficiency caused by the deterioration of light spot quality.

[0043] 3. The first and second light-emitting chips are arranged opposite each other. Compared with the same-side arrangement, this makes the distribution of the light-emitting chips on the carrier more balanced. The heat dissipation during operation is also more evenly distributed on the carrier, which can accelerate the heat dissipation of the light-emitting chips and reduce the heat accumulation in the area where the light-emitting chips are located, thus facilitating rapid heat dissipation. Attached Figure Description

[0044] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0045] Figure 1 This is a perspective view of a semiconductor laser provided in this application;

[0046] Figure 2 This is a cross-sectional view of a semiconductor laser provided in this application;

[0047] Figure 3 This is a top view of a semiconductor laser provided in this application;

[0048] Figure 4 A schematic diagram showing the heat distribution when the light source chips are located on the same side;

[0049] Figure 5 This is a schematic diagram showing the heat distribution of the light source chip designed in this application distributed on opposite sides;

[0050] In the diagram: 1. First light-emitting module; 11. First light-emitting chip; 12. First slow-axis collimating lens; 13. First reflector; 2. Second light-emitting module; 21. Second light-emitting chip; 22. Second slow-axis collimating lens; 23. Second reflector; 3. Carrier; 31. First support; 32. Second support; 33. Third support; 4. Fiber optic unit; 5. Bundling unit; 51. Coupler; 52. Polarization bundler; 53. First light guide group; 531. Third reflector; 532. Fourth reflector; 54. Second light guide group; 541. Fifth reflector; 542. Parallelogram prism. Detailed Implementation

[0051] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the embodiments of this application.

[0052] In the description of the embodiments of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0053] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a replaceable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application based on the specific circumstances.

[0054] This application discloses a semiconductor laser.

[0055] Please see Figure 1 , Figure 4 as well as Figure 5 One embodiment of a semiconductor laser provided in this application includes:

[0056] The carrier 3, several light-emitting groups (one or more light-emitting groups), bundle unit 5, and optical fiber unit 4.

[0057] Several light-emitting groups are installed on the carrier 3 and distributed in an array along the first horizontal straight line direction. The first horizontal straight line direction can be the horizontal direction or the length direction of the carrier 3, without restriction.

[0058] Each light-emitting group includes a first light-emitting module 1 and a second light-emitting module 2; the first light-emitting module 1 and the second light-emitting module 2 are distributed along a second horizontal straight line direction perpendicular to the first horizontal straight line direction, and are distributed vertically upwards and downwards. It should be noted that in actual design, the first light-emitting module 1 and the second light-emitting module 2 are the same light-emitting module, but this application distinguishes them by using the terms first light-emitting module 1 and second light-emitting module 2 to better illustrate the relative positions between the light-emitting modules. In addition, taking the first horizontal straight line direction as the transverse direction or the length direction of the carrier 3 as an example, the corresponding second horizontal straight line direction is the longitudinal direction or the width direction of the carrier 3.

[0059] The first light-emitting module 1 includes a first light-emitting chip 11, a first reflector 13, and a first slow-axis collimating lens 12; the first light-emitting chip 11, the first slow-axis collimating lens 12, and the first reflector 13 are arranged sequentially along a second horizontal straight line. The second light-emitting module 2 includes a second light-emitting chip 21, a second reflector 23, and a second slow-axis collimating lens 22; the second light-emitting chip 21, the second slow-axis collimating lens 22, and the second reflector 23 are arranged sequentially along a second horizontal straight line.

[0060] During the design process, the placement and angle of the reflectors should ensure that each reflected beam has the same tilt angle. This prevents the beam from being blocked by other reflectors and guarantees that the light spots formed by each beam in the beam combining unit 5 are arranged sequentially. Furthermore, in terms of distribution, the arrangement direction (first horizontal straight line direction) of the first light-emitting chip 11 / second light-emitting chip 21 is perpendicular to its own light-emitting direction (second horizontal straight line direction). The slow-axis collimating mirror and the reflectors collimate the light beams emitted by the light-emitting chips and reflect them into the beam combining unit 5.

[0061] The first light-emitting chip 11 and the second light-emitting chip 21 are positioned opposite each other and their light emission directions are opposite. The beam combining unit 5 and the optical fiber unit 4 are mounted on the carrier 3, and the beam combining unit 5 is used to guide the light beam emitted from the first reflector 13 and the second reflector 23 to the optical fiber unit 4.

[0062] The semiconductor laser designed in this application has the following beneficial effects:

[0063] 1. In the second horizontal straight direction, because the two light-emitting modules are arranged in an orderly manner along this direction and spatially integrated through a reasonable vertical layout, the situation that might have previously been scattered and occupied a large amount of space is greatly improved, effectively shortening the space occupied in this direction. This allows the distance between the various components of the light-emitting modules to be shortened, and they can be arranged more closely together, thus achieving higher space utilization. The improved space utilization further has a chain reaction, the most direct being the effective reduction of the overall laser size, making it more compact and small while meeting performance requirements.

[0064] 2. The more compact arrangement of components in the light-emitting module also plays a positive role in the first horizontal straight line direction. As the spacing between components decreases, the space occupied in the first horizontal straight line direction naturally becomes smaller. Specifically, the distance between the light-emitting chip farther from the beam combining unit 5 and the beam combining unit 5 also decreases. This reduction in distance is significant, as it helps alleviate the problem of decreased coupling efficiency caused by deterioration in beam spot quality, thereby ensuring that the laser can operate in a more stable and efficient state, improving overall working efficiency and output quality, and better meeting the stringent performance requirements of various application scenarios.

[0065] 3. The first light-emitting chip 11 and the second light-emitting chip 21 are arranged opposite to each other. Compared with the arrangement on the same side, the distribution of the light-emitting chips on the carrier 3 is more balanced. The heat dissipation during operation is also more evenly distributed on the carrier 3, which can accelerate the heat dissipation speed of the light-emitting chips, reduce the heat accumulation in the area where the light-emitting chips are located, and thus facilitate rapid heat dissipation.

[0066] In the in-depth study of laser heat dissipation performance, a series of rigorous and targeted simulation experiments were conducted using advanced simulation software. The simulation results show that, under specific water-cooling conditions, when the light-emitting chips are located on the same side, the highest temperature exhibited is approximately 108℃ (accurately measured). Figure 4 In That is to say , That is to say This data can be clearly seen from Figure 4 It can be obtained intuitively.

[0067] In stark contrast, the innovative design of the light-emitting chips located on opposite sides, under identical water-cooling conditions, achieves a maximum temperature of only about 100°C. Figure 5 In That is to say , That is to say ), relevant data are displayed at Figure 5 Through rigorous comparative calculations, it can be found that the highest temperature of the same-side design scheme is 8% higher than that of the scheme in this application. This data is not a simple numerical difference; it reflects profound design significance and differences in heat dissipation performance.

[0068] In the heat dissipation mechanism of lasers, temperature directly affects several key performance indicators such as equipment stability, operating efficiency, and lifespan. The proposed design of opposite-sided light-emitting chips in this application achieves a lower maximum temperature under the same heat dissipation conditions, demonstrating its significant advantages in optimizing heat distribution and conduction paths. Lower temperatures mean less thermal stress on the internal components, enabling more stable operation and reducing performance fluctuations and potential failure risks caused by high temperatures.

[0069] Furthermore, it is worth emphasizing that in the field of engineering technology, an 8% improvement in heat dissipation is quite significant and cannot be ignored. For precision equipment like lasers, which have extremely high requirements for heat dissipation, this level of optimization can greatly improve the overall performance of the equipment, providing a solid and reliable guarantee for its continuous and efficient operation in complex and ever-changing working environments. It also provides valuable reference and guidance for subsequent laser design and optimization work.

[0070] The carrier 3 proposed in this application can be composed of a shell and a cover, and the specific design can be varied according to actual needs without limitation.

[0071] The above is Embodiment 1 of a semiconductor laser provided in this application. The following is Embodiment 2 of a semiconductor laser provided in this application. Please refer to the following for details. Figures 1 to 3 .

[0072] Based on the solution of Embodiment 1 above:

[0073] Furthermore, such as Figure 2 As shown, taking the second light-emitting module 2 distributed above the first light-emitting module 1 as an example, specifically, a first support 31, a second support 32 and a third support 33 can be sequentially provided on the carrier 3 along the second horizontal straight line direction.

[0074] The first light-emitting chip 11 is disposed between the second support 32 and the third support 33, and the first reflector 13 is disposed between the first support 31 and the second support 32; the first slow-axis collimating lens 12 is disposed between the first support 31 and the second support 32, or between the second support 32 and the third support 33.

[0075] The second light-emitting chip 21 is disposed on the first support 31, the second slow-axis collimating lens 22 is disposed on the second support 32, and the second reflector 23 is disposed on the third support 33. The second support 32 is provided with a through hole for the light beam emitted by the first light-emitting chip 11 to pass through.

[0076] Furthermore, the first support 31, the second support 32, and the third support 33 can be integrally formed with the carrier 3, that is, the corresponding support structure can be designed directly on the carrier 3 to realize the height difference distribution between the first light-emitting module 1 and the second light-emitting module 2.

[0077] Furthermore, the first support 31, the second support 32, and the third support 33 can also be integrally connected to the bottom of the second light-emitting chip 21, the bottom of the second slow-axis collimating lens 22, and the bottom of the second reflector 23, respectively. That is, the second light-emitting chip 21, the second slow-axis collimating lens 22, and the second reflector 23 are modified to have corresponding support structures at their bottoms to achieve the height difference distribution between the first light-emitting module 1 and the second light-emitting module 2.

[0078] Compared to fixing the support structure to the bottom of components such as the light-emitting chip, this application prefers to integrally mold the support structure onto the carrier 3, which is more convenient to process, avoids the need to modify the light-emitting module, and reduces costs.

[0079] Furthermore, the first support 31, the second support 32, and the third support 33 are each designed to be connected to the carrier 3 via an adjustment assembly, allowing for height adjustment relative to the carrier 3. This adjustment assembly may include bolts and guide rods. Each support has a lug on one side, through which the bolt and guide rod move. The bolt is threadedly engaged with the lug, and the end of the bolt passing through the lug is rotatably connected to the carrier 3 without displacement in its own axial direction. Therefore, rotating the bolt adjusts the lifting motion of the support, thus achieving height adjustment. This height-adjustable design can meet more height difference requirements, offering better applicability. Additionally, it should be noted that when the height is designed to be adjustable, the through-hole is designed as an oval shape, allowing it to accommodate beams passing through at greater height differences.

[0080] Furthermore, the height of the upper edge of the first reflector 13 is less than the light-emitting height of the second light-emitting chip 21, so as to avoid blocking the light emitted by the second light-emitting chip 21.

[0081] Furthermore, the first light-emitting chips 11 of adjacent light-emitting groups are spaced apart, and the second light-emitting chips 21 of adjacent light-emitting groups are also spaced apart. The spacing can be designed according to actual needs, for example, the spacing can be designed to be relatively small, so as to further reduce the space occupied in the first horizontal straight line direction and further reduce the length of the laser in that direction.

[0082] Furthermore, the beam combining unit 5 includes a coupler 51, a polarization beam combiner 52, a first light guide group 53, and a second light guide group 54.

[0083] The fiber unit 4, coupler 51 and polarization combiner 52 are distributed sequentially along the first horizontal straight line.

[0084] The first light guide group 53 is used to guide the light beam emitted from the first reflector 13 to the polarization combiner 52; the second light guide group 54 is used to guide the light beam emitted from the second reflector 23 to the polarization combiner 52 and to make the light beam guided by itself and the light beam guided by the first light guide group 53 enter the polarization combiner 52 in a perpendicular state.

[0085] Furthermore, the fiber unit 4, the coupler 51, and the polarization combiner 52 are arranged on one side of the light-emitting group along the second horizontal straight line direction.

[0086] Since the light beams ultimately output by the first light-emitting module 1 and the second light-emitting module 2 have a height difference, in order to integrate the light beams with a height difference, one of the first light guide group 53 and the second light component has a height difference integrator to integrate the light beams to the same height.

[0087] Specifically, taking the second light guide group 54, which is designed with a height difference integration component, as an example:

[0088] The first light guide group 53 may include a third reflector 531 and a fourth reflector 532; the third reflector 531 guides the light beam emitted from the first reflector 13 to the fourth reflector 532; the fourth reflector 532 guides the light beam emitted from the third reflector 531 to the polarization combiner 52; the fourth reflector 532 is disposed along a first horizontal straight line direction on the side of the polarization combiner 52 away from the coupler 51, and the third reflector 531 is distributed along the same first horizontal straight line direction as each of the first reflectors 13; the fourth reflector 532 and the third reflector 531 are distributed sequentially along a second horizontal straight line direction.

[0089] The second light guide group 54 includes a fifth reflector 541 and a parallelogram prism 542. The parallelogram prism 542 serves as a height difference integration component. The parallelogram prism 542 allows light to be laterally displaced after entering the prism surface, but does not change the direction of propagation.

[0090] The fifth reflector 541 guides the light beam emitted from the second reflector 23 to the parallelogram prism 542; the parallelogram prism 542 guides the light beam emitted from the fifth reflector 541 to the polarization combiner 52. The polarization combiner 52, the parallelogram prism, and the fifth reflector 541 are arranged sequentially along the second horizontal straight line, and the fifth reflector 541 and each of the second reflectors 23 are distributed along the same first horizontal straight line.

[0091] In this embodiment, the parallelogram prism 542 is applied to the second light-emitting module 2 at a higher height. By adjusting the position and arrangement of the parallelogram prism 542, the height of the light beam after passing through the parallelogram can be reduced. Similarly, when applied to the first light-emitting module 1 at a lower height, the parallelogram prism 542 and the fifth reflector 541 are correspondingly positioned behind the first reflector 13. By adjusting the position and arrangement of the parallelogram prism 542, the height of the light beam after passing through the parallelogram can be increased.

[0092] Of course, in addition to using the above-mentioned method of adding a parallelogram prism 542, it can also be achieved by relying solely on a reflector (in the case of only the third reflector 531, the fourth reflector 532, and the fifth reflector 541). It is only necessary to ensure that the angle of the reflector relative to the carrier 3 is adjustable. By adjusting the position of the reflector and its angle relative to the carrier 3, the two beams of light can be adjusted to the same height and their propagation directions are perpendicular.

[0093] After passing through polarization combiner 52, the light beam enters fiber unit 4 via coupler 51 (fiber optic coupler 51).

[0094] The above provides a detailed description of a semiconductor laser provided in this application. For those skilled in the art, based on the ideas of the embodiments of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A semiconductor laser, characterized in that, It includes a carrier (3), several light-emitting groups, a beam-combining unit (5), and an optical fiber unit (4); Several of the light-emitting groups are mounted on the carrier (3) and distributed in an array along the first horizontal straight line direction; Each of the light-emitting groups includes a first light-emitting module (1) and a second light-emitting module (2); The first light-emitting module (1) and the second light-emitting module (2) are distributed along a second horizontal straight line direction perpendicular to the first horizontal straight line direction, and are distributed vertically upwards and downwards; The first light-emitting module (1) includes a first light-emitting chip (11), a first reflector (13), and a first slow-axis collimating lens (12). The first light-emitting chip (11), the first slow-axis collimating lens (12), and the first reflector (13) are arranged sequentially along the second horizontal straight line direction; The second light-emitting module (2) includes a second light-emitting chip (21), a second reflector (23), and a second slow-axis collimating lens (22). The second light-emitting chip (21), the second slow-axis collimating lens (22), and the second reflector (23) are arranged sequentially along the second horizontal straight line direction; The first light-emitting chip (11) and the second light-emitting chip (21) are positioned opposite each other, and their light emission directions are opposite. The beam combining unit (5) and the optical fiber unit (4) are mounted on the carrier (3), and the beam combining unit (5) is used to guide the light beam emitted from the first reflector (13) and the second reflector (23) to the optical fiber unit (4). The beam combining unit (5) includes a coupler (51), a polarization beam combiner (52), a first light guide group (53), and a second light guide group (54). The fiber unit (4), the coupler (51), and the polarization combiner (52) are distributed sequentially along the first horizontal straight line direction; The first light guide group (53) is used to guide the light beam emitted from the first reflector (13) to the polarization combiner (52); The second light guide group (54) is used to guide the light beam emitted from the second reflector (23) to the polarization combiner (52); The optical fiber unit (4), the coupler (51), and the polarization combiner (52) are disposed on one side of the light-emitting group along the second horizontal straight line direction; The first light guide group (53) includes a third reflector (531) and a fourth reflector (532); The third reflector (531) guides the light beam emitted from the first reflector (13) to the fourth reflector (532). The fourth reflector (532) guides the light beam emitted from the third reflector (531) to the polarization combiner (52). The second light guide group (54) includes a fifth reflector (541) and a parallelogram prism (542). The fifth reflector (541) guides the light beam emitted from the second reflector (23) to the parallelogram prism (542). The parallelogram prism (542) guides the light beam emitted from the fifth mirror (541) to the polarization combiner (52).

2. A semiconductor laser according to claim 1, characterized in that, The second light-emitting module (2) is positioned above the first light-emitting module (1); The carrier (3) is provided with a first support (31), a second support (32) and a third support (33) in sequence along the second horizontal straight line direction; The first light-emitting chip (11) is disposed between the second support (32) and the third support (33); The first reflector (13) is disposed between the first support (31) and the second support (32); The first slow-axis collimating lens (12) is disposed between the first support (31) and the second support (32), or between the second support (32) and the third support (33); The second light-emitting chip (21) is disposed on the first support (31); The second slow-axis collimating lens (22) is mounted on the second support (32); The second reflector (23) is mounted on the third support (33); The second support (32) is provided with a through hole for the light beam emitted by the first light-emitting chip (11) to pass through.

3. A semiconductor laser according to claim 2, characterized in that, The first support (31), the second support (32) and the third support (33) are integrally formed with the carrier (3).

4. A semiconductor laser according to claim 2, characterized in that, The first support (31), the second support (32) and the third support (33) are integrally connected to the bottom of the second light-emitting chip (21), the bottom of the second slow-axis collimating lens (22) and the bottom of the second reflector (23), respectively.

5. A semiconductor laser according to claim 2, characterized in that, The height of the upper edge of the first reflector (13) is less than the light-emitting height of the second light-emitting chip (21).

6. A semiconductor laser according to claim 1, characterized in that, The first light-emitting chips (11) of adjacent light-emitting groups are spaced apart; The second light-emitting chips (21) of adjacent light-emitting groups are spaced apart.

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