High-uniformity femtosecond laser supersaturation doping device and method and high-performance detector

Abstract

The invention provides a high-uniformity femtosecond laser supersaturation doping device and method and a high-performance detector, and belongs to the technical field of photoelectricity. The high-uniformity femtosecond laser supersaturation doping device comprises a femtosecond laser, a multi-pulse generation device, a shutter, a half-wave plate, a Glan-Taylor prism, a processing lens and a light splitting device which are arranged in sequence; and the light splitting device introduces the laser pulse into a detection light path of the pulse detection system or a processing light path of the closed processing cavity to implement material modification processing. According to the method, a single pulse in each period of femtosecond laser is split into a plurality of sub-pulses, and transient time domain details of the sub-pulses are changed by regulating and controlling dispersion, so that the physical process of the supersaturated doped material is finely regulated and controlled, the modification uniformity of the femtosecond laser supersaturated doped material is improved, and the modification efficiency of the femtosecond laser supersaturated doped material is improved. Based on the method, the dark current level of the femtosecond laser modified photoelectric detector is reduced by two orders of magnitude, and the performance of the photoelectric detector is greatly improved.

Description

Technical Field

[0001] The present invention belongs to the field of optoelectronic technology, and in particular relates to a highly uniform femtosecond laser supersaturation doping device, method and high-performance detector. Background Art

[0002] Semiconductor doping is an essential step in the preparation of semiconductor functional devices. Increasing the doping concentration above the physical equilibrium limit is called supersaturated doping. Supersaturated doping can promote changes in the optoelectronic properties of materials and facilitate the research and development of new optoelectronic devices.

[0003] Conventional supersaturation doping methods include ion implantation and femtosecond laser doping. Ion implantation can precisely control the doping concentration and depth, but the doping atoms are mostly in invalid interstitial positions, rather than effective substitution or quasi-substitution positions, that is, the doping activation rate is low, and the ion implantation cost is very high. In comparison, femtosecond laser doping is a new supersaturation doping technology with good prospects.

[0004] Supersaturated doping of the corresponding elements can be achieved by irradiating the material with a femtosecond laser in a specific environment (doped atomic atmosphere, surface coating, etc.). Compared with other doping methods, femtosecond laser supersaturated doping has low cost and high doping activation rate. For example, using a femtosecond laser to focus and scan silicon materials in an SF6 atmosphere has become a standard technical solution for preparing supersaturated sulfur-doped silicon. However, femtosecond laser ablation will induce a micro-conical light-trapping structure on the surface of the material, and obtain a doping concentration on the surface of the material that far exceeds the solid solubility limit. Since the modified area is black, supersaturated doped silicon is also called "black silicon". Since the doping process and the formation process of the surface micro-nanostructure are easily disturbed by environmental factors and random defects of the material itself, the disadvantage of femtosecond laser supersaturated doping is that the doping concentration, depth, and especially uniformity are difficult to control, resulting in high dark current and poor uniformity of black silicon photodetectors prepared by femtosecond lasers.

[0005] The existing technology controls the doping process by controlling the conventional parameters of the femtosecond laser pulse, including the focused spot area, pulse power flux, scanning processing speed, pulse polarization, etc., without considering controlling the time domain dispersion of the pulse and customizing the waveform generation to regulate the interaction between light and matter. Summary of the invention

[0006] The problem to be solved by the present invention is to provide a highly uniform femtosecond laser supersaturation doping device, method and high-performance detector.

[0007] In order to solve the above technical problems, the technical solution adopted by the present invention is: a high-uniform femtosecond laser supersaturated doping device, comprising a femtosecond laser, a multi-pulse generating device, a shutter, a half-wave plate, a Glan Taylor prism, a processing lens and a spectrometer arranged in sequence, wherein the output side of the spectrometer is respectively provided with a pulse detection system and a closed processing cavity, a detection optical path is between the spectrometer and the pulse detection system, a processing optical path is between the spectrometer and the closed processing cavity, a quartz window is provided on the input side of the closed processing cavity, a sample holder is installed in the closed processing cavity, and the sample holder is installed on a three-dimensional translation device.

[0008] Furthermore, the multi-pulse generating device is a pulse shaper or a Michelson interferometer.

[0009] Furthermore, the pulse shaper includes a pair of gratings, a pair of lenses and a spatial light modulator, and the spatial light modulator is placed on the Fourier surface of the lens. The time domain waveform control of the pulse can be achieved by applying a customized spectral phase through the spatial light modulator.

[0010] Furthermore, the spectroscopic device is used to control the operating path of the laser pulse emitted by the femtosecond laser, introduce the laser pulse into the detection optical path of the pulse detection system or into the processing optical path of the closed processing chamber to implement material modification processing. The detection optical path and the processing optical path are independent of each other. Therefore, the spectroscopic device can be a resetting mirror, a translation mirror or a semi-transparent and semi-reflective mirror.

[0011] Furthermore, the pulse detection system is a shaping detection system based on the MIIPS principle, including a frequency doubling crystal, a lens, a color filter and a spectrometer, and is used in conjunction with a pulse shaper.

[0012] Furthermore, the half-wave plate and Glan-Taylor prism combination realizes polarization and energy flow control of laser pulses; and the processing lens focuses the shaped femtosecond laser pulses onto the sample surface.

[0013] Furthermore, the sample to be doped is placed on a sample holder in a closed processing chamber, and a three-dimensional translation device cooperates with the shutter opening and closing to realize scanning processing of any pattern.

[0014] The present invention also provides a high uniformity femtosecond laser supersaturation doping method, comprising the following steps:

[0015] S1. Measure the thickness of the transmission medium and calculate the difference in transmission dispersion between the processing light path and the detection light path:

[0016] Define the transmission dispersion of the laser pulse output by the femtosecond laser to the pulse detection system as f1(ω), and the transmission dispersion to the sample surface as f2(ω). Measure the material and thickness of all transmission media included in the processing optical path and the detection optical path after the spectrometer, and then calculate f2(ω)-f1(ω);

[0017] S2. Measure the laser pulse phase:

[0018] Use a spectrometer to introduce the laser pulse output by the femtosecond laser into the detection optical path, control the multi-pulse generation device to perform phase parameter scanning, and the pulse detection system records the scanning information to calculate f(ω)+f1(ω);

[0019] S3, Customized multi-pulse waveform generation:

[0020] Use a spectrometer to introduce laser pulses into the processing optical path, and apply a compensation phase Ψ(ω) to the multi-pulse generation device.

[0021] Ψ(ω)=-(f(ω)+f1(ω))-(f2(ω)-f1(ω))=-f(ω)-f2(ω)

[0022] Based on the compensation phase Ψ(ω), a customized phase is applied based on the target waveform to split the laser pulse into multiple sub-pulses. The sub-pulse interval is in the order of femtoseconds to picoseconds, and the waveform and dispersion of the sub-pulses are independently adjustable.

[0023] S4. Scanning to prepare supersaturated doping materials:

[0024] The sample to be doped is fixed on a sample holder in a closed processing chamber; the closed processing chamber is evacuated, filled with doping gas as a dopant, and a customized shaped pulse is used to scan the sample surface to prepare a uniform supersaturated doped material.

[0025] The present invention also provides a high-performance detector, comprising the following preparation steps:

[0026] S101. Preparation of supersaturated doped samples by high uniformity femtosecond laser supersaturated doping method:

[0027] S102, annealing the supersaturated doped sample;

[0028] S103, preparing metal electrodes on the modified surface of the supersaturated doped sample after annealing and on the bottom of the supersaturated doped sample to obtain a photodetector;

[0029] Furthermore, in step S101, the sample preparation method is: firstly, the RCA standard cleaning method is used to clean the metal and organic pollutants on the surface of the sample to be doped to obtain a pure sample to be doped.

[0030] Furthermore, in step S102, the annealing temperature is controlled within a range of 500 to 1000 K, and the annealing time is controlled within a range of 1 to 30 min.

[0031] Due to the adoption of the above technical solution, the present invention has the following beneficial effects:

[0032] The present invention splits a single pulse in each cycle of a femtosecond laser into multiple sub-pulses (such as pulse shaping), and changes the transient time domain details of the sub-pulses by regulating dispersion, thereby finely regulating the physical process of the supersaturated doped material, thereby improving the uniformity of the modification of the supersaturated doped material by the femtosecond laser, and based on this method, the dark current level of the femtosecond laser modified photodetector is reduced by two orders of magnitude, and the responsiveness and specific detection rate are far superior to commercial detectors, greatly improving the performance of the photodetector. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The present invention will be described in detail below with reference to the accompanying drawings and in combination with examples, and the advantages and implementation methods of the present invention will become more obvious. The contents shown in the accompanying drawings are only used to explain the present invention and do not constitute any limitation to the present invention in any sense. In the accompanying drawings:

[0034] Figure 1 It is a schematic structural diagram of the highly uniform femtosecond laser supersaturation doping device of the present invention.

[0035] Figure 2 This is a double pulse generation diagram of the present invention.

[0036] Figure 3 This is a comparison diagram of the processing morphologies of unshaped initial pulse and customized pulse femtosecond laser saturated doped silicon in the present invention.

[0037] Figure 4 This is a comparison chart of the coefficient of variation of the unshaped initial pulse of the present invention and the customized pulse femtosecond laser saturated doped silicon.

[0038] Figure 5 This is a comparison chart of the absorption rates of the unshaped initial pulse of the present invention and the customized pulse femtosecond laser saturated doped silicon.

[0039] Figure 6 The figure is a flow chart of the method for preparing the high-performance detector of the present invention.

[0040] Figure 7 The figure is a comparison diagram of dark current levels of the supersaturated doped silicon photodetector of the present invention under the condition of 2.5V bias and no light.

[0041] Figure 8 Schematic diagram of the responsivity and specific detection rate of the supersaturated doped silicon photodetector based on customized pulses of the present invention under a bias voltage of 2.5V.

[0042] In the figure:

[0043] 1. Femtosecond laser; 2. Pulse shaper; 3. Shutter; 4. Half-wave plate; 5. Glan-Taylor prism; 6. Processing lens; 7. Spectral splitter; 8. Sealed processing chamber; 9. Three-dimensional translation device; 10. Sample holder; 11. Quartz window; 12. Pulse detection system. DETAILED DESCRIPTION

[0044] like Figure 1 As shown, a highly uniform femtosecond laser supersaturated doping device of the present invention comprises a femtosecond laser 1, a multi-pulse generating device (a pulse shaper 2 in this embodiment), a shutter 3, a half-wave plate 4, a Glan Taylor prism 5, a processing lens 6 and a spectrometer 7 which are arranged in sequence, wherein a pulse detection system 12 and a closed processing chamber 8 are respectively arranged on the output side of the spectrometer 7, a detection optical path is between the spectrometer 7 and the pulse detection system 12, a processing optical path is between the spectrometer 7 and the closed processing chamber 8, a quartz window 11 (high transmittance quartz window) is arranged on the input side of the closed processing chamber 8, a sample holder 10 is installed in the closed processing chamber 8, and the sample holder 10 is installed on the three-dimensional translation device 9.

[0045] Among them, the pulse shaper 2 is composed of a 4f device, which includes a pair of gratings, a pair of lenses and a spatial light modulator (SLM). The spatial light modulator is placed on the Fourier surface of the lens. The time domain waveform control of the pulse can be achieved by applying a customized spectral phase through the spatial light modulator. Specifically, the laser pulse is diffracted after passing through the grating, and the different wavelength components are separated in space. They are focused by a lens. On the focal plane (Fourier surface), different wavelengths are linearly arranged in space. The spatial light modulator has linearly arranged pixels, each pixel corresponds to a wavelength, and different phases are applied between different pixels, that is, the spectral phase modulation of the laser pulse is achieved, and then through a symmetrical lens and grating, the laser pulse is recombined, that is, the pulse shaping is completed.

[0046] The multi-pulse generating device can also use beam splitting, delay line, and beam combining devices, such as the Michelson interferometer. Michelson used beam splitting, delay line, and beam combining to generate double pulses. Specifically, when a laser pulse passes through a beam splitting device (typically a semi-transparent and semi-reflective mirror), two independent beams will be separated. By controlling the optical path of the two laser pulses, they can be combined into a double pulse through a conventional beam combining element. Placing a delay line in the split light path can control the delay of the double pulse. The remaining parameters of the sub-pulse can also be controlled using corresponding optical elements in the optical path.

[0047] Among them, the spectrometer 7 is used to control the running route of the laser pulse emitted by the femtosecond laser 1, introduce the laser pulse into the detection optical path of the pulse detection system 12 or introduce it into the processing optical path of the closed processing chamber 8 to implement material modification processing. The detection optical path and the processing optical path are independent of each other. Therefore, the spectrometer 7 can be a reset mirror, a translation mirror or a semi-transparent and semi-reflective mirror.

[0048] The pulse detection system 12 is a shaping detection system based on the MIIPS principle, including a frequency doubling crystal, a lens, a color filter and a spectrometer, and needs to be used in conjunction with the pulse shaper 2 .

[0049] MIIPS stands for multiphoton intrapulse interference phase scan, which is a single-beam scanning method. The second harmonic SHG obtained after the pulse is frequency-doubled by the frequency-doubling crystal BBO is collected by the spectrometer. The spatial light modulator scans the phase parameters according to a predetermined program. The SHG signal collected by the spectrometer will change accordingly. The SHG signal after the initial phase is fully compensated is the widest and strongest, that is, the initial phase is obtained through the algorithm.

[0050] The half-wave plate 4 and the Glan-Taylor prism 5 are combined to realize the polarization and energy flow control of the laser pulse. The processing lens 6 can focus the shaped femtosecond laser pulse onto the sample surface.

[0051] The sample to be doped is placed on a sample holder 10 in a closed processing chamber 8, and scanning processing of any pattern can be achieved by the three-dimensional translation device 9 in conjunction with the opening and closing of the shutter 3.

[0052] The present invention also provides a high uniformity femtosecond laser supersaturation doping method, comprising the following steps:

[0053] S1. Measure the thickness of the transmission medium and calculate the difference in transmission dispersion between the processing light path and the detection light path:

[0054] The original laser pulse output by the femtosecond laser 1 contains an unknown and random spectral phase f(ω), where f(ω) is frequency domain information. The second-order and higher phases in the frequency domain correspond to the temporal dispersion of the laser pulse in the time domain. Different wavelength components of the laser pulse have different transmission speeds in the medium. Therefore, after the femtosecond laser pulse passes through a medium of a certain thickness, the light of different wavelength components exerts different transmission phases, which introduces additional transmission dispersion.

[0055] Correspondence between pulse spectral phase and time domain dispersion: The spectral phase can be Taylor expanded into a polynomial form, containing zero-order, first-order, second-order, and third-order phases. The zero-order spectral phase corresponds to the carrier envelope phase in the time domain and does not need to be considered; the first-order phase corresponds to pulse delay in the time domain; the second-order phase corresponds to chirp broadening; the third-order and other high-order phases (the higher the order, the smaller the amount) correspond to the distortion and broadening of the complex pulse waveform. The original phase contained in the pulse output by the femtosecond laser 1 is mainly third-order, so the initial waveform contains distortion and broadening. The dispersion introduced in the medium is mainly second-order, and the third-order will also be introduced, but the third-order dispersion is a high-order small amount. The shorter the initial pulse, the more obvious the high-order dispersion.

[0056] The transmission dispersion of the laser pulse output by the femtosecond laser 1 reaching the pulse detection system 12 is defined as f1(ω), and the transmission dispersion reaching the sample surface is defined as f2(ω). The two optical paths before the spectrometer 7 coincide with each other. It is only necessary to measure the material and thickness of all transmission media (air, lens, quartz window, etc.) contained in the processing optical path and the detection optical path after the spectrometer 7, and then calculate f2(ω)-f1(ω).

[0057] S2. Measure the laser pulse phase:

[0058] When all phases of the laser pulse are fully compensated, that is, the total phase of the laser pulse is 0, the pulse width reaches the shortest limit and the frequency doubling efficiency is the highest. This laser pulse is also called a Fourier transform limited pulse (also known as TL pulse, transform-limited, the dispersion above the second order is fully compensated, and the pulse reaches the shortest limit state).

[0059] The laser pulse output by the femtosecond laser 1 is introduced into the detection optical path using the spectrometer 7, the spatial light modulator of the pulse shaper 2 is controlled to perform phase parameter scanning, the pulse detection system 12 records the scanning information, and f(ω)+f1(ω) is calculated using the MIIPS software algorithm.

[0060] S3, Customized multi-pulse waveform generation:

[0061] The laser pulse is introduced into the processing optical path by using the spectrometer 7, and the compensation phase Ψ(ω) is applied to the spatial light modulator of the pulse shaper 2.

[0062] Ψ(ω)=-(f(ω)+f1(ω))-(f2(ω)-f1(ω))=-f(ω)-f2(ω)

[0063] By applying a customized phase based on the target waveform on the basis of the compensation phase Ψ(ω), the laser pulse can be split into multiple sub-pulses with a sub-pulse interval ranging from femtoseconds to picoseconds, and the waveform and dispersion of the sub-pulses are independently adjustable.

[0064] Specifically, the multi-pulse generation method is as follows: the spatial light modulator applies third-order dispersion or sinusoidal phase or step phase to obtain multi-pulses; in addition, MICS can be used to control multi-pulse generation and independent sub-pulse modulation. Because the first-order phase corresponds to the pulse time domain delay, the spatial light modulator pixels are separated at comb-tooth intervals.

[0065] like Figure 2 As shown, the pixels are divided into two categories, and the delay of the positive first-order phase τ1 and the negative first-order phase τ2 are set to ±1500fs respectively, generating a double pulse with a pulse delay of 3ps.

[0066] S4. Scan and prepare supersaturated doping materials under appropriate parameters:

[0067] The sample to be doped is fixed on the sample holder 10 in the closed processing chamber 8; after the closed processing chamber 8 is evacuated, a doping gas with a specific pressure is filled in as a dopant, and a customized shaped pulse is used to scan the sample surface under the conventional supersaturated doping parameter configuration to prepare a uniform supersaturated doped material.

[0068] Principle of uniformity improvement:

[0069] The improvement in material homogeneity is attributed to the modulation of light-matter interaction achieved through pulse shaping.

[0070] Within a few picoseconds after the first sub-pulse, the electrical, optical and thermal properties of the material surface change dramatically, thus affecting the effect of the after-pulse.

[0071] The key to achieving spatial ablation uniformity through pulse shaping, a temporal modulation, is to control the difference in ablation degree between the center and edge areas of the spot.

[0072] A single pulse can easily induce strong nonlinear absorption. Strong excitation promotes ultrafast material removal behaviors such as Coulomb explosion and phase explosion in the central area. The edge effect is weak, and the degree of ablation at different positions varies greatly. Therefore, it is not conducive to achieving uniform processing in a large area.

[0073] In contrast, weaker pre-pulse treatment and multi-pulse action can reduce the difference in the degree of ablation between the center and the edge: specifically, the change in carrier concentration induced by the pre-pulse can regulate the optical absorption coefficient of the material surface; a delay time of several picoseconds is sufficient to heat the material and soften the lattice, thereby suppressing the generation of defects caused by subsequent pulses; subsequent pulses are also prone to interfere with the surface plasmons induced by the pre-pulse, resulting in intensity distribution modulation.

[0074] Therefore, by generating multiple pulses through pulse shaping and customizing parameters such as sub-pulse waveform details, the interaction between light and matter can be precisely controlled, thereby achieving more uniform femtosecond laser modification processing.

[0075] like Figure 3 As shown, taking femtosecond laser sulfur supersaturated doped silicon as an example (black silicon is obtained by scanning and processing crystalline silicon in SF6 atmosphere), random micro-cone structures will appear on the surface of black silicon, and the uniformity of doping modification is difficult to control. The processing morphology comparison between the unshaped initial pulse (that is, the shaper does not apply any phase) and the customized double pulse (sub-pulse delay is 3ps) under the same conditions is given. Figure 3 These are SEM photos. The upper picture was taken at a 45° tilted viewing angle, and the lower picture was taken from the front view. The microstructures prepared by the initial pulse have obvious size differences and uneven distribution, while the uniformity of the microstructures prepared by the customized pulse is improved.

[0076] like Figure 4As shown in the figure, from the quantitative analysis of ablation degree, micro-cone density and micro-cone area, the larger the coefficient of variation, the worse the uniformity. It can be found that the uniformity of the material prepared by the customized pulse has been greatly improved compared with the initial pulse.

[0077] The typical feature of supersaturated sulfur-doped silicon prepared by femtosecond laser is its excellent optoelectronic properties. However, due to the band gap limitation, crystalline silicon is almost transparent to light with a wavelength above 1100nm, which limits the operating band of silicon-based optoelectronic devices. Figure 5 As shown in the figure, the supersaturated doped silicon prepared by the initial pulse and the customized pulse always maintains a high absorption rate in the visible to near-infrared band. However, the absorption rate of the black silicon prepared by the initial pulse at different positions (solid line and dotted line) is quite different, and the absorption of the black silicon prepared by the customized pulse at different positions maintains good consistency, which once again proves the modification uniformity of the customized pulse.

[0078] like Figure 6 As shown, based on the above-mentioned high uniformity femtosecond laser supersaturation doping method, the present invention also provides a high performance detector, including the following preparation steps:

[0079] S101. Preparation of supersaturated doped samples by high uniformity femtosecond laser supersaturated doping method:

[0080] In this embodiment, the sample preparation method is: first use the RCA standard cleaning method to clean the metal and organic pollutants on the surface of the silicon wafer to obtain a pure silicon wafer, and then perform steps S1-S4. In step S4, the pure silicon wafer is processed in an SF6 atmosphere.

[0081] This embodiment is doping in a gaseous environment. It is also possible to plate sulfur, arsenic trisulfide (As2S3), etc. on the surface of the material or use femtosecond laser processing in a sulfuric acid solution (solid and liquid environment doping).

[0082] S102, annealing the supersaturated doped sample;

[0083] The annealing temperature is controlled at 500-1000 K, and the annealing time is controlled at 1-30 min.

[0084] S103, preparing metal electrodes on the modified surface of the supersaturated doped sample after annealing (the black silicon surface in this embodiment) and the supersaturated doped sample base material respectively to obtain a photodetector.

[0085] Among them, aluminum or other metal electrodes are plated using thermal evaporation, magnetron sputtering and other methods.

[0086] Applicable materials of the present invention may be Si and Ge, and the doping elements may be S, Se, Te, Au, Ag, Cu, etc.

[0087] The indicators that reflect the performance of photodetectors include device photoresponsivity, dark current and specific detection rate. Specific detection rate is the core indicator of the unified evaluation standard for the performance of different types of photodetectors, which is jointly determined by the device's responsivity and dark current noise.

[0088] Photodetector low dark current verification:

[0089] Since the uniformity of femtosecond laser modification is difficult to control, the prepared photodetector usually has a large dark current, which limits the application of the device in weak light detection. The dark current level of the photodetector is also affected by the annealing conditions of the material. Under the same conditions, the supersaturated doped silicon material prepared by the initial pulse and the customized pulse is annealed. The final dark current level of the photodetector is as follows: Figure 7 As shown, under the same parameter configuration, the dark current level of the photodetector is reduced by nearly two orders of magnitude using customized shaped multi-pulses.

[0090] Verification of high response performance of photodetector:

[0091] Photodetectors behave like Figure 8 As shown in the figure, under a low bias voltage of 2.5V, the response spectrum of the photodetector prepared by the custom pulse covers the visible band (400-800nm) and the near-infrared band (800-1600nm), and the highest responsivity can reach the order of 100A / W, which is far superior to commercial Si and commercial Ge detectors. Existing technology shows that the highest specific detection rate of commercial detectors is 10 12 Jones level, the peak performance of the photodetector in this embodiment can reach 10 14 Jones, which exceeds commercial detectors by two orders of magnitude and is the highest reported among silicon-based detectors.

[0092] It can be seen that in this embodiment, a single pulse in each cycle output by the femtosecond laser 1 is decomposed into multiple sub-pulses by pulse shaping technology, and the delay between the sub-pulses is in picoseconds (1ps=10 -12 s) level (normal laser output frequency is in the range of KHz to MHz, that is, the period is in the range of ms to μs), and the pulse time domain dispersion is controlled to generate a customized pulse waveform. The customized pulse is used to achieve uniform femtosecond laser supersaturated doped silicon, and a high-performance (low dark current, high response performance) supersaturated doped silicon photodetector is prepared.

[0093] The embodiments of the present invention are described in detail above, but the contents are only preferred embodiments of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the present invention.

Claims

1. A highly uniform femtosecond laser supersaturation doping device, characterized in that: The invention comprises a femtosecond laser, a multi-pulse generating device, a shutter, a half-wave plate, a Glan Taylor prism, a processing lens and a spectroscopic device which are arranged in sequence. A pulse detection system and a closed processing cavity are respectively arranged on the output side of the spectroscopic device. A detection optical path is between the spectroscopic device and the pulse detection system, and a processing optical path is between the spectroscopic device and the closed processing cavity. A quartz window is arranged on the input side of the closed processing cavity. A sample holder is installed in the closed processing cavity, and the sample holder is installed on a three-dimensional translation device.

2. The highly uniform femtosecond laser supersaturation doping device according to claim 1, characterized in that: The multi-pulse generating device is a pulse shaper or a Michelson interferometer.

3. The highly uniform femtosecond laser supersaturation doping device according to claim 2, characterized in that: The pulse shaper includes a pair of gratings, a pair of lenses and a spatial light modulator. The spatial light modulator is placed on the Fourier surface of the lens. The time domain waveform control of the pulse can be achieved by applying a customized spectral phase through the spatial light modulator.

4. The highly uniform femtosecond laser supersaturation doping device according to claim 1, characterized in that: The spectroscopic device is used to control the running route of the laser pulse emitted by the femtosecond laser, introduce the laser pulse into the detection optical path of the pulse detection system or into the processing optical path of the closed processing chamber to implement material modification processing, the detection optical path and the processing optical path are independent of each other, and the spectroscopic device is a resetting mirror, a translation mirror or a semi-transparent and semi-reflective mirror.

5. The highly uniform femtosecond laser supersaturation doping device according to claim 3, characterized in that: The pulse detection system is a shaping detection system based on the MIIPS principle, including a frequency doubling crystal, a lens, a color filter and a spectrometer, and is used in conjunction with a pulse shaper.

6. The highly uniform femtosecond laser supersaturation doping device according to claim 1, characterized in that: The half-wave plate and Glan Taylor prism combination realizes polarization and energy flow control of laser pulses; the processing lens focuses the shaped femtosecond laser pulses onto the sample surface; the sample to be doped is placed on a sample holder in a closed processing chamber, and the three-dimensional translation device cooperates with the shutter opening and closing to realize scanning processing of arbitrary patterns.

7. A high uniform femtosecond laser supersaturation doping method, implemented by using the high uniform femtosecond laser supersaturation doping device according to any one of claims 1 to 6, characterized in that: The following steps are involved: S1. Measure the thickness of the transmission medium and calculate the difference in transmission dispersion between the processing light path and the detection light path: Define the transmission dispersion of the laser pulse output by the femtosecond laser to the pulse detection system as f1(ω), and the transmission dispersion to the sample surface as f2(ω). Measure the material and thickness of all transmission media included in the processing optical path and the detection optical path after the spectrometer, and then calculate f2(ω)-f1(ω); S2. Measure the laser pulse phase: Use a spectrometer to introduce the laser pulse output by the femtosecond laser into the detection optical path, control the multi-pulse generation device to perform phase parameter scanning, and the pulse detection system records the scanning information to calculate f(ω)+f1(ω); S3, Customized multi-pulse waveform generation: Use a spectrometer to introduce laser pulses into the processing optical path, and apply a compensation phase Ψ(ω) to the multi-pulse generation device. Ψ(ω)=-(f(ω)+f1(ω))-(f2(ω)-f1(ω))=-f(ω)-f2(ω) Applying a customized phase based on the target waveform on the basis of the compensation phase Ψ(ω) to split the laser pulse into multiple sub-pulses, with the sub-pulse intervals ranging from femtoseconds to picoseconds, and the waveform and dispersion of the sub-pulses are independently adjustable; S4. Scanning to prepare supersaturated doping materials: The sample to be doped is fixed on a sample holder in a closed processing chamber; the closed processing chamber is evacuated, filled with doping gas as a dopant, and a customized shaped pulse is used to scan the sample surface to prepare a uniform supersaturated doped material.

8. A high-performance detector, realized by the high-uniform femtosecond laser supersaturation doping method of claim 7, characterized in that: The method comprises the following preparation steps: S101. Preparation of supersaturated doped samples by high uniformity femtosecond laser supersaturated doping method: S102, annealing the supersaturated doped sample; S103, preparing metal electrodes on the modified surface of the supersaturated doped sample after annealing and on the bottom of the supersaturated doped sample to obtain a photodetector.

9. The high performance detector according to claim 8, characterized in that: In step S101, the sample preparation method is: firstly, the RCA standard cleaning method is used to clean the metal and organic pollutants on the surface of the sample to be doped to obtain a pure sample to be doped.

10. The high performance detector according to claim 8, characterized in that: In step S102, the annealing temperature is controlled within a range of 500 to 1000 K, and the annealing time is controlled within a range of 1 to 30 minutes.

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