A passivation molecular solution, a passivation layer, a solar cell and a preparation method thereof

Abstract

The present invention belongs to the field of photovoltaics, and specifically relates to a passivation molecule solution, a passivation layer, a solar cell and a preparation method. The preparation method of the passivation molecule solution of the present invention comprises: mixing the passivation molecule, 3A molecular sieve and a solvent, filtering, and obtaining the passivation molecule solution. The preparation method of the present invention can reduce the contact between the perovskite film and water molecules, reduce the formation of perovskite hydrates, and thus improve the photoelectric performance and stability of the perovskite solar cell.

Description

Technical Field

[0001] The invention belongs to the field of photovoltaics, and in particular relates to a passivation molecule solution, a passivation layer, a solar cell and a preparation method thereof. Background Art

[0002] Perovskite crystals have shown strong competitiveness due to their excellent optoelectronic properties and easy solution preparation. Since their reports, the photoelectric conversion efficiency of metal halide perovskite solar cells has increased rapidly. Minimizing carrier recombination at heterojunctions is crucial to enhancing the photovoltaic performance and stability of perovskite solar cells. Through efficient surface passivation, the power conversion efficiency of perovskite solar cells has been greatly improved.

[0003] However, the existing passivation treatment methods have certain defects. High-purity passivation molecules and solvents are difficult to prepare and are expensive. Most passivation molecules will contain trace amounts of water during use, which will react with some perovskites to form hydrates, changing the structure of the crystal and making it unable to absorb visible light, which is not conducive to improving device performance and stability.

[0004] Therefore, it is urgent to develop a passivation layer preparation method that can reduce the water content in the passivation layer, improve the film formation quality of the perovskite film, and thereby enhance the photoelectric performance and stability of perovskite solar cells. Summary of the invention

[0005] In order to solve the problems existing in the prior art, the present invention provides a method for preparing a passivation molecular solution. By introducing a 3A zeolite molecular sieve with nanoscale mesoporous channels during the preparation of the passivation molecular solution, the contact between perovskite and water molecules is reduced, the formation of perovskite hydrates is reduced, and the photoelectric performance and stability of the perovskite solar cell are improved. At the same time, the method is low in price, reusable, and simple to operate. While ensuring the reduction of water content, the change of the passivator composition is avoided.

[0006] Specifically, the present invention provides a method for preparing a passivation molecule solution, the method comprising: mixing the passivation molecules, 3A molecular sieve and a solvent, filtering and obtaining the passivation molecule solution.

[0007] In one or more embodiments, the solvent is selected from one or more of isopropanol, chlorobenzene, and toluene.

[0008] In one or more embodiments, the passivating molecule is an amine compound, preferably one or more selected from ethylenediamine, butylamine, ethylenediamine dihydroiodide, 1,3-diaminopropane dihydroiodide and 2-phenylethylamine hydroiodide.

[0009] In one or more embodiments, the concentration of the passivation molecule in the passivation molecule solution is 0.01-10 mg / mL.

[0010] In one or more embodiments, the amount of the 3A molecular sieve used is 0.1-1 g relative to 1 mL of solvent.

[0011] The invention provides a passivation molecule solution prepared by the method of the invention.

[0012] The invention provides a method for preparing a passivation layer, which comprises: coating the passivation molecule solution of the invention to obtain the passivation layer.

[0013] In one or more embodiments, the passivation molecule solution is coated by spin coating, slit coating or doctor blade coating.

[0014] The invention provides a passivation layer prepared by the method of the invention.

[0015] In one or more embodiments, the thickness of the passivation layer is 0.01-10 nm.

[0016] The present invention provides a solar cell comprising the passivation layer of the present invention.

[0017] In one or more embodiments, the solar cell includes a perovskite film, and the passivation layer is on a surface of the perovskite film.

[0018] In one or more embodiments, the perovskite film has a thickness of 100-10000 nm.

[0019] In one or more embodiments, the perovskite film has a band gap of 0.9-3.0 eV.

[0020] In one or more embodiments, the perovskite film comprises a perovskite structure material, the chemical formula of the perovskite structure material is ABX3, A is a monovalent cation, preferably selected from one or more of cesium ions, rubidium ions, methylamine ions and formamidine ions; B is a divalent cation, preferably selected from one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions and calcium ions; X is a monovalent anion, preferably selected from one or more of iodide ions, bromide ions, chloride ions, fluoride ions, thiocyanate ions, tetrafluoroborate ions and hexafluorophosphate ions.

[0021] Compared with the prior art, the present invention has the following beneficial effects: the passivation layer prepared by the passivation molecule solution of the present invention can reduce the contact between the perovskite film and water molecules during the passivation process, avoid the formation of perovskite hydrates, and thus improve the photoelectric performance and stability of the perovskite solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Schematic diagram of the structure of a single-junction perovskite solar cell prepared according to some embodiments of the present invention.

[0023] Figure 2 Schematic diagram of the structure of a tandem perovskite solar cell prepared according to some embodiments of the present invention. DETAILED DESCRIPTION

[0024] In order to enable those skilled in the art to understand the characteristics and effects of the present invention, the following is a general description and definition of the terms and expressions mentioned in the specification and claims. Unless otherwise specified, all technical and scientific terms used in the text are the common meanings understood by those skilled in the art for the present invention. In the event of a conflict, the definition in this specification shall prevail.

[0025] The theories or mechanisms described and disclosed herein, whether correct or incorrect, should not limit the scope of the present invention in any way, that is, the present invention can be implemented without being limited by any specific theory or mechanism.

[0026] Herein, “comprising”, “including”, “containing” and similar terms encompass the meanings of “consisting essentially of” and “consisting of”. For example, when “A comprises B and C” is disclosed herein, “A consists essentially of B and C” and “A consists of B and C” should be deemed to be disclosed herein.

[0027] In this article, all features such as values, quantities, contents and concentrations defined in the form of numerical ranges or percentage ranges are only for brevity and convenience. Accordingly, the description of numerical ranges or percentage ranges should be considered to have included and specifically disclosed all possible secondary ranges and individual values ​​within the range (including integers and fractions).

[0028] In this document, unless otherwise specified, percentage refers to mass percentage and ratio refers to mass ratio.

[0029] Herein, when describing embodiments or examples, it should be understood that they are not used to limit the present invention to these embodiments or examples. On the contrary, all substitutes, improvements and equivalents of the methods and materials described in the present invention can be included in the scope limited by the claims.

[0030] In this document, in order to make the description concise, not all possible combinations of various technical features in various embodiments or examples are described. Therefore, as long as there is no contradiction in the combination of these technical features, the various technical features in various embodiments or examples can be combined arbitrarily, and all possible combinations should be considered to be within the scope of this specification.

[0031] The method for preparing a passivation molecule solution of the present invention comprises: mixing a passivation molecule, a 3A molecular sieve and a solvent, filtering, and obtaining a passivation molecule solution. In the present invention, a 3A molecular sieve having a nanoscale mesoporous channel is introduced in the preparation process of the passivation molecule solution. Since water molecules can freely enter the pores of the 3A molecular sieve, but the solvent and the passivation molecule cannot enter the pores of the 3A molecular sieve, for perovskite solar cells, the introduction of the 3A molecular sieve can reduce the contact between perovskite and water molecules, reduce the formation of perovskite hydrates, and thus improve the photoelectric performance and stability of the perovskite solar cell; at the same time, the method is low in price, reusable, simple to operate, and avoids the change of the passivator component while ensuring the reduction of water content.

[0032] In the present invention, solvent can be one or more selected from isopropyl alcohol (IPA), chlorobenzene (CB) and toluene. In the present invention, passivation molecule can be an amine compound, preferably selected from ethylenediamine (EDA), butylamine (BA), ethylenediamine dihydroiodide (EDAI2), 1,3-diaminopropane dihydroiodate (PDADI) and 2-phenylethylamine hydroiodate (PEAI) One or more. In the passivation molecule solution of the present invention, the concentration of passivation molecule can be 0.01-10mg / mL, such as 0.05mg / mL, 0.1mg / mL, 0.2mg / mL, 0.4mg / mL, 0.5mg / mL, 0.8mg / mL, 1mg / mL, 2mg / mL, 3mg / mL, 4mg / mL, 5mg / mL, 6mg / mL, 7mg / mL, 7mg / mL, 8mg / mL, 9mg / mL, 10mg / mL.

[0033] In the present invention, relative to 1mL solvent, the amount of 3A molecular sieve can be 0.1-1g, for example, 1mL solvent corresponds to 0.1g of 3A molecular sieve, 1mL solvent corresponds to 0.2g of 3A molecular sieve, 1mL solvent corresponds to 0.3g of 3A molecular sieve, 1mL solvent corresponds to 0.4g of 3A molecular sieve, 1mL solvent corresponds to 0.5g of 3A molecular sieve, 1mL solvent corresponds to 0.6g of 3A molecular sieve, 1mL solvent corresponds to 0.7g of 3A molecular sieve, 1mL solvent corresponds to 0.8g of 3A molecular sieve, 1mL solvent corresponds to 0.9g of 3A molecular sieve, 1mL solvent corresponds to 1.0g of 3A molecular sieve. In the present invention, the amount of 3A molecular sieve is controlled within the aforementioned range, which can effectively remove water from the passivation molecular solution, reduce the contact between the perovskite film and water molecules during the passivation process, and avoid the formation of perovskite hydrates, thereby improving the photoelectric performance and stability of perovskite solar cells.

[0034] The method for preparing a passivation layer of the present invention comprises: applying the passivation molecule solution of the present invention to obtain a passivation layer. In the present invention, the passivation molecule solution can be applied by spin coating, slit coating or scraping. In some embodiments, the spin coating is one-time spin coating.

[0035] The thickness of the passivation layer of the present invention may be 0.01-10 nm, for example, 0.05 nm, 0.1 nm, 0.15 nm, 0.2 nm, 0.5 nm, 1.0 nm, 1.5 nm, 2 nm, 5 nm, 8 nm, or 10 nm.

[0036] The perovskite solar cell comprising a passivation layer of the present invention may include a single-junction perovskite solar cell or a tandem perovskite solar cell.

[0037] In the present invention, the perovskite solar cell may include a formal perovskite solar cell or an inverted perovskite solar cell. For example, the perovskite solar cell may be a formal single-junction perovskite solar cell, an inverted single-junction perovskite solar cell, a formal tandem perovskite solar cell, or an inverted tandem perovskite solar cell.

[0038] In the present invention, the thickness of the perovskite film can be 100-10000nm, such as 100nm, 500nm, 1000nm, 2000nm, 3000nm, 4000nm, 5000nm, 6000nm, 7000nm, 8000nm, 9000nm, 10000nm. In the present invention, the band gap of the perovskite film can be 0.9-3.0eV, such as 0.9eV, 1.0eV, 1.5eV, 2.0eV, 2.5eV, 3.0eV. In the present invention, the perovskite film comprises a perovskite structure material, and the chemical formula of the perovskite structure material is ABX3, A is a monovalent cation, which may include but is not limited to a cesium ion (Cs + ), rubidium ions (Rb + ), methylamine ion (CH3NH3 + , MA) and formamidinium ion (CH(NH2)2 + , FA) or more; B is a divalent cation, which may include but is not limited to lead ions (Pb 2+ ), copper ions (Cu 2+ ), zinc ion (Zn 2+ ), gallium ions (Ga 2+ ), tin ions (Sn 2+ ) and calcium ions (Ca 2+ ) or more; X is a monovalent anion, which may include but is not limited to iodide ion (I - ), bromide ion (Br - ), chloride ion (Cl - ), fluoride ion (F- ), thiocyanate ion (SCN - ), tetrafluoroborate ion (BF4 - ) and hexafluorophosphate ion (PF6 - )

[0039] In some embodiments, the perovskite solar cell of the present invention is a formal single-junction perovskite solar cell, which may include a transparent conductive substrate, an electron transport layer, a perovskite film, a passivation layer, a hole transport layer and a back electrode in sequence.

[0040] In some embodiments, the perovskite solar cell of the present invention is an inverted single-junction perovskite solar cell, which may include a transparent conductive substrate, a hole transport layer, a perovskite film, a passivation layer, an electron transport layer, and a back electrode in sequence. The inverted single-junction perovskite solar cell may also include a hole blocking layer, which is between the electron transport layer and the back electrode.

[0041] In the present invention, the formal stacked perovskite solar cell may include a bottom electrode, a bottom cell, an intermediate layer, a formal perovskite top cell and a top electrode in sequence, and the positive electrode top cell may include an electron transport layer, a perovskite film, a passivation layer and a hole transport layer in sequence.

[0042] In the present invention, the inverted stacked perovskite solar cell may include a bottom electrode, a bottom cell, an intermediate layer, an inverted perovskite top cell and a top electrode in sequence, and the inverted top cell may include a hole transport layer, a perovskite film, a passivation layer and an electron transport layer in sequence. The inverted stacked perovskite solar cell may also include a hole blocking layer, which is between the electron transport layer and the top electrode.

[0043] In the present invention, the transparent conductive substrate may be an indium tin oxide (ITO) substrate, a fluorine-doped tin oxide (FTO) substrate or an indium zinc oxide (IZO) substrate.

[0044] In the present invention, the hole transport layer can be an inorganic transport material and / or an organic p-type semiconductor material. In the present invention, the inorganic transport material can be one or more selected from nickel oxide (NiO), cuprous oxide (Cu2O), molybdenum oxide (MoO3), copper iodide (CuI) and redox graphene. In the present invention, the organic p-type semiconductor material can be one or more selected from poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA, poly(triaryl amine)), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), poly-3,4-ethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS), poly[bis(4-phenyl)(4-butylphenyl)amine] (Ploy-TPD), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz), [2-(9H-carbazole-9-yl)ethyl]phosphonic acid and [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid.

[0045] In the present invention, the thickness of the hole transport layer can be 1-100 nm, for example, 1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 60 nm, 100 nm.

[0046] In the present invention, the thickness of the electron transport layer can be 1-100 nm, for example, 1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 60 nm, 100 nm.

[0047] In the present invention, the electron transport layer may be an n-type semiconductor material. In the present invention, the n-type semiconductor material may be one or more selected from titanium oxide (TiO2), tin oxide (SnO2), zinc oxide (ZnO), fullerene (C60), graphene, and fullerene derivatives (PCBM).

[0048] In the present invention, the back electrode may be one or more selected from the group consisting of gold, palladium, silver, titanium, chromium, nickel, aluminum, copper, indium tin oxide (ITO) and indium zinc oxide (IZO).

[0049] In the present invention, the top electrode may include a transparent electrode layer; preferably, the top electrode may also include a metal grid line; more preferably, the top electrode may also include an anti-reflection layer.

[0050] In the present invention, the intermediate layer may be indium tin oxide (ITO).

[0051] In the present invention, the bottom cell may be a crystalline silicon bottom cell, a perovskite bottom cell, a copper indium gallium selenide bottom cell, a cadmium telluride bottom cell or an organic bottom cell. In the present invention, the bottom electrode may include a transparent electrode layer; preferably, the bottom electrode may also include a metal grid line.

[0052] In the present invention, the transparent electrode layer may be indium tin oxide (ITO) and / or indium zinc oxide (IZO).

[0053] In the present invention, the metal gate line may be one or more selected from Ag, Au and Cu.

[0054] The present invention provides a method for preparing a formal single-junction perovskite solar cell, which may include the following steps:

[0055] (1) depositing an electron transport layer on the surface of a transparent conductive substrate;

[0056] (2) depositing a perovskite film on the surface of the electron transport layer;

[0057] (3) depositing a passivation layer on the surface of the perovskite film;

[0058] (4) depositing a hole transport layer on the surface of the passivation layer;

[0059] (5) A back electrode is deposited on the surface of the hole transport layer to obtain a formal single-junction perovskite solar cell.

[0060] The present invention provides a method for preparing an inverted single-junction perovskite solar cell, which may include the following steps:

[0061] (1) depositing a hole transport layer on the surface of a transparent conductive substrate;

[0062] (2) depositing a perovskite film on the surface of the hole transport layer;

[0063] (3) depositing a passivation layer on the surface of the perovskite film;

[0064] (4) preparing an electron transport layer on the surface of the passivation layer;

[0065] (5) A back electrode is deposited on the surface of the electron transport layer to obtain an inverted single-junction perovskite solar cell.

[0066] The present invention provides a method for preparing a formal tandem perovskite solar cell, which may include the following steps:

[0067] (1) Depositing the bottom electrode and the intermediate layer on both sides of the bottom cell;

[0068] (2) depositing an electron transport layer on the surface of the intermediate layer;

[0069] (3) depositing a perovskite film on the surface of the electron transport layer;

[0070] (4) depositing a passivation layer on the surface of the perovskite film;

[0071] (5) depositing a hole transport layer on the surface of the passivation layer;

[0072] (6) Depositing a top electrode on the surface of the hole transport layer to obtain a formal laminated perovskite solar cell.

[0073] The present invention provides a method for preparing an inverted stacked perovskite solar cell, which may include the following steps:

[0074] (1) Depositing the bottom electrode and the intermediate layer on both sides of the bottom cell;

[0075] (2) depositing a hole transport layer on the surface of the intermediate layer;

[0076] (3) depositing a perovskite film on the surface of the hole transport layer;

[0077] (4) depositing a passivation layer on the surface of the perovskite film;

[0078] (5) depositing an electron transport layer on the surface of the passivation layer;

[0079] (6) A top electrode is deposited on the surface of the electron transport layer to obtain an inverted stacked perovskite solar cell.

[0080] In the present invention, the deposition method of the perovskite film can be spin coating, blade coating, evaporation, printing, spraying, spray pyrolysis or slit coating.

[0081] The present invention will be described below in the form of specific examples. It should be understood that these examples are merely illustrative and are not intended to limit the scope of the present invention. The methods, reagents and materials used in the examples are, unless otherwise stated, conventional methods, reagents and materials in the art. The raw material compounds in the examples can all be purchased through commercial routes.

[0082] The 3A molecular sieve in the examples and comparative examples of the present invention was purchased from Aladdin, CAS No.: 308080-99-1, with a particle size of 2-3 mm.

[0083] The 4A molecular sieve in the examples and comparative examples of the present invention was purchased from Aladdin, CAS No.: 70955-01-0, with a particle size of 2-3 mm.

[0084] Example 1

[0085] In this embodiment, the structure is prepared as Figure 1 The single-junction perovskite solar cell shown in the figure has the following specific steps:

[0086] (1) using an ITO cleaning agent, deionized water, acetone, and isopropyl alcohol (IPA) to ultrasonically treat an ITO glass substrate for 15 minutes in sequence to obtain a clean ITO glass substrate;

[0087] (2) A NiOx layer with a thickness of 15 nm was prepared on the front side of a clean ITO glass substrate by magnetron sputtering; a SAM layer with a thickness of 3 nm was prepared on the surface of the NiOx layer by a one-step spin coating method, wherein the material of the SAM layer was Me-4PACz; the NiOx layer and the SAM layer together constituted a hole transport layer;

[0088] (3) The perovskite structure material Cs was prepared on the SAM surface by anti-solvent anisole spin coating method. 0.05 MA 0.15 FA 0.80 Pb(I 0.75 Br 0.25 )3. Perovskite film with a thickness of 1 μm;

[0089] (4) PDADI, 3A molecular sieve and isopropanol were mixed and filtered to obtain a passivation molecule solution, wherein 1 mL of solvent corresponds to 0.3 g of 3A molecular sieve and the concentration of the passivation molecule is 0.5 mg / mL; the passivation molecule solution was coated on the surface of the perovskite film by a one-step spin coating method to prepare a passivation layer with a thickness of 0.5 nm;

[0090] (5) preparing an electron transport layer with a thickness of 15 nm and made of C60 on the surface of the passivation layer by thermal evaporation;

[0091] (6) preparing a hole blocking layer with a thickness of 6 nm and made of BCP on the surface of the electron transport layer by thermal evaporation;

[0092] (7) A back electrode with a thickness of 150 nm and a material of Ag was prepared on the surface of the hole blocking layer by a thermal evaporation method, and a single-junction perovskite solar cell was obtained.

[0093] Example 2

[0094] In this embodiment, the structure is prepared as Figure 2 The stacked perovskite solar cell shown in the figure has the following specific steps:

[0095] (1) sputtering an ITO intermediate layer on a p-type crystalline silicon substrate having a velvet pyramid structure;

[0096] (2) A NiOx layer with a thickness of 15 nm is prepared on the front side of the ITO intermediate layer by magnetron sputtering; a SAM layer with a thickness of 3 nm is prepared on the surface of the NiOx layer by a one-step spin coating method, wherein the material of the SAM layer is Me-4PACz; the NiOx layer and the SAM layer together constitute a hole transport layer;

[0097] (3) The perovskite structure material Cs was prepared on the SAM surface by anti-solvent anisole spin coating method. 0.05 MA 0.15 FA 0.80 Pb(I 0.75 Br 0.25 )3. Perovskite film with a thickness of 1 μm;

[0098] (4) PDADI, 3A molecular sieve and isopropanol were mixed and filtered to obtain a passivation molecule solution, wherein 1 mL of solvent corresponds to 0.3 g of 3A molecular sieve and the concentration of the passivation molecule is 0.5 mg / mL; the passivation molecule solution was coated on the surface of the perovskite film by a one-step spin coating method to prepare a passivation layer with a thickness of 0.5 nm;

[0099] (5) preparing an electron transport layer with a thickness of 15 nm and made of C60 on the surface of the passivation layer by thermal evaporation;

[0100] (6) using a thermal evaporation method to prepare a hole blocking layer with a thickness of 15 nm and made of SnO2 on the electron transport layer;

[0101] (7) A transparent electrode layer with a thickness of 50 nm and made of IZO is prepared on the surface of the hole blocking layer by magnetron sputtering; a metal grid line with a thickness of 400 nm and made of Ag is prepared on the surface of the transparent electrode layer by thermal evaporation; the transparent electrode and the metal grid line together constitute the top electrode, and a metal grid line with a thickness of 400 nm and made of Ag is prepared on the bottom surface of the silicon cell by thermal evaporation; thereby, a stacked perovskite solar cell is obtained.

[0102] Example 3

[0103] The difference between this embodiment and embodiment 1 is that in the passivation molecular solution of this embodiment, 1 mL of solvent corresponds to 0.1 g of 3A molecular sieve.

[0104] Example 4

[0105] The difference between this embodiment and embodiment 1 is that in the passivation molecular solution of this embodiment, 1 mL of solvent corresponds to 1 g of 3A molecular sieve.

[0106] Comparative Example 1

[0107] The only difference between this comparative example and Example 1 is that the passivation molecular solution of this comparative example does not contain 3A molecular sieve.

[0108] Comparative Example 2

[0109] The only difference between this comparative example and Example 2 is that the passivation molecular solution of this comparative example does not contain 3A molecular sieve.

[0110] Comparative Example 3

[0111] The difference between this comparative example and Example 1 is that 4A molecular sieve is used in the passivation molecular solution of this comparative example, and 1 mL of solvent corresponds to 0.3 g of 4A molecular sieve.

[0112] Comparative Example 4

[0113] The difference between this comparative example and Example 1 is that in the passivated molecular solution of this comparative example, 1 mL of solvent corresponds to 0.05 g of 3A molecular sieve.

[0114] Comparative Example 5

[0115] The difference between this comparative example and Example 1 is that anhydrous calcium chloride is used in the passivation molecular solution of this comparative example, and 1 mL of solvent corresponds to 0.3 g of anhydrous calcium chloride.

[0116] Test Example 1

[0117] Photovoltaic performance test of perovskite solar cells: At 25°C and AM 1.5G standard solar spectrum, a solar simulator was used to set the voltage range to -0.3V-2.0V, and the current output of the perovskite solar cells prepared in Examples 1-4 and Comparative Examples 1-4 at different voltages was tested, and the corresponding current-voltage (IV) characteristic curves were plotted. The surface area of ​​the single-junction perovskite solar cell was 0.04cm 2 The surface area of ​​the tandem perovskite solar cell is 1.1664cm 2 , the incident light power (Pin) is 100mWcm -2 The open circuit voltage, short circuit current density, fill factor and photoelectric conversion efficiency of the perovskite solar cells prepared in Examples 1-4 and Comparative Examples 1-4 were obtained according to the characteristic curves.

[0118] (1) Open circuit voltage (Voc): The voltage value corresponding to when the current is equal to zero.

[0119] (2) Short-circuit current density (Jsc): The current value when the voltage is zero is the short-circuit current (Isc), and the current per unit battery surface area is the short-circuit current density.

[0120] (3) Fill factor (FF): The ratio of the maximum output power (Pmax) of the battery to the product of the open circuit voltage and the short circuit current. The calculation formula is (Pmax / Voc*Isc), where the maximum power point is the point where the battery output power reaches its maximum value.

[0121] (4) Photoelectric conversion efficiency (PCE): Photoelectric conversion efficiency refers to the ratio of maximum output power to incident light power (Pin), and the calculation formula is (Pmax / Pin)*100%.

[0122] The test results of the open circuit voltage, short circuit current density, fill factor and photoelectric conversion efficiency of the perovskite solar cells prepared in Examples 1-4 and Comparative Examples 1-5 are shown in Table 1.

[0123] Table 1: Open circuit voltage, short circuit current density, fill factor and photoelectric conversion efficiency of perovskite solar cells prepared in Examples 1-4 and Comparative Examples 1-5

[0124] <![CDATA[V OC (V)]]> <![CDATA[J SC (mA / cm 2 )]]> FF(%) PCE(%) Example 1 1.264 20.85 85.4 22.51 Example 2 1.975 20.46 82.4 33.29 Example 3 1.258 20.71 84.2 21.93 Example 4 1.262 20.82 85.1 22.36 Comparative Example 1 1.245 20.61 83.6 21.45 Comparative Example 2 1.952 20.32 80.8 32.04 Comparative Example 3 1.251 20.64 83.9 21.66 Comparative Example 4 1.256 20.69 84.0 21.82 Comparative Example 5 1.234 19.59 75.48 18.25

[0125] Test Example 2

[0126] Stability test of perovskite solar cells: Cr-Cu alloy is used instead of Ag electrode to avoid instability caused by Ag corrosion and diffusion. 0.1cm 2 The aperture mask was provided, and the stability of the perovskite solar cells prepared in Examples 1-4 and Comparative Examples 1-5 was tested under continuous 1 sun illumination by performing a maximum power point tracking test (MPPT) on the device in a N2 environment at 40°C.

[0127] Table 2: Stability of perovskite solar cells prepared in Examples 1-4 and Comparative Examples 1-5

[0128]

[0129]

Claims

1. A method for preparing a passivation molecule solution, characterized in that: The method comprises: mixing the passivation molecules, 3A molecular sieve and solvent, filtering and obtaining the passivation molecule solution.

2. The method according to claim 1, characterized in that The method has one or more of the following features: The solvent is selected from one or more of isopropanol, chlorobenzene and toluene; The passivation molecule is an amine compound, preferably one or more selected from ethylenediamine, butylamine, ethylenediamine dihydroiodide, 1,3-diaminopropane dihydroiodide and 2-phenylethylamine hydroiodide; In the passivation molecule solution, the concentration of the passivation molecule is 0.01-10 mg / mL; The usage of the 3A molecular sieve is 0.1-1 g relative to 1 mL of solvent.

3. A passivation molecule solution prepared by the method of claim 1 or 2.

4. A method for preparing a passivation layer, characterized in that: The method comprises: coating the passivation molecule solution according to claim 3 to obtain a passivation layer.

5. The method according to claim 1, characterized in that The passivation molecule solution is coated by spin coating, slit coating or blade coating.

6. A passivation layer obtained by the method according to claim 3 or 4.

7. The method according to claim 6, characterized in that The thickness of the passivation layer is 0.01-10 nm.

8. A solar cell comprising the passivation layer according to claim 6 or 7.

9. The solar cell according to claim 8, characterized in that The solar cell comprises a perovskite film, and the passivation layer is on the surface of the perovskite film.

10. The solar cell according to claim 9, characterized in that The method has one or more of the following features: The thickness of the perovskite film is 100-10000nm; The band gap of the perovskite film is 0.9-3.0 eV; The perovskite film contains a perovskite structure material, the chemical formula of the perovskite structure material is ABX3, A is a monovalent cation, preferably selected from one or more of cesium ions, rubidium ions, methylamine ions and formamidine ions; B is a divalent cation, preferably selected from one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions and calcium ions; X is a monovalent anion, preferably selected from one or more of iodide ions, bromide ions, chloride ions, fluoride ions, thiocyanate ions, tetrafluoroborate ions and hexafluorophosphate ions.

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