Gas distribution device for improving mixing uniformity

Abstract

A gas distribution apparatus described herein includes a mixing plate adjacent a back plate of a showerhead. The mixing plate has a rear surface and a front surface defining a thickness of the mixing plate. The mixing plate has a mixing channel including a top portion and a bottom portion defining a mixing channel length and at least two gas inlets in fluid communication with a top portion of the mixing channel. The gas distribution apparatus also includes a mixer disposed within the thickness of the mixing plate in the top portion of the mixing channel. The mixer has a top plate and a mixer rod extending from the top plate and a plurality of blades positioned along the length of the mixer rod. A processing chamber including the gas distribution apparatus described herein is also provided.

Description

Technical Field

[0001] The present disclosure generally relates to an apparatus for flowing gases into and out of a processing chamber. More specifically, embodiments of the present disclosure relate to an apparatus for introducing an improved uniformly mixed gas into a processing chamber. Background Art

[0002] In the field of semiconductor processing, flat panel display processing or other electronic device processing, vapor deposition processes play an important role in depositing materials on substrates (also known as wafers). As the geometry of electronic devices continues to shrink and the density of devices continues to increase, the size and aspect ratio of features become more aggressive, for example, feature sizes of about 0.07 μm and aspect ratios of 10 or more.

[0003] During an atomic layer deposition (ALD) process, reactant gases are introduced into a processing chamber containing a substrate. Typically, an area of ​​the substrate is contacted with a first reactant adsorbed onto the surface of the substrate. The substrate is then contacted with a second reactant, which reacts with the first reactant to form a deposited material. A purge gas may be introduced between the delivery of each reactant gas to ensure that the reaction occurs only on the substrate surface.

[0004] Some processes use multiple gases for various reasons. For example, a chemical vapor deposition (CVD) process may mix two reactive gases in the process region of a process chamber while adding a third gas as a diluent or catalyst. Additionally, some processes may incorporate additional gas post-treatments to treat deposited films or clean the process chamber.

[0005] When multiple gases are introduced into the processing chamber through a single entry point (e.g., through a showerhead), the uniformity of gas mixing after the entry point is important to ensure uniform gas at the substrate surface. In many showerhead configurations, the gases entering through the showerhead are not mixed uniformly, making the deposition gas at the substrate surface non-uniform, resulting in non-uniform deposition process.

[0006] Therefore, there is a need in the art for an apparatus for introducing an improved uniform gas mixture into a processing chamber. Summary of the invention

[0007] One or more embodiments of the present disclosure relate to a gas distribution device. The gas distribution device includes a mixing plate adjacent to a rear plate of a showerhead. The mixing plate has a rear surface and a front surface that define the thickness of the mixing plate and a mixing channel, and the mixing channel includes a top portion and a bottom portion that define the length of the mixing channel. The top portion has a first inner diameter, and the bottom portion has a second inner diameter that is not equal to the first inner diameter. The mixing plate further includes at least two gas inlets that are fluidly connected to the top portion of the mixing channel. The gas distribution device also includes a mixer disposed within the thickness of the mixing plate in the top portion of the mixing channel. The mixer has a top plate and a mixer rod extending from the top plate. The mixer rod includes a top and a bottom that define the length of the mixer rod. The top of the mixer rod is connected to the top plate and extends into the top portion of the mixing channel. The mixer includes a plurality of blades positioned along the length of the mixer rod.

[0008] Additional embodiments of the present disclosure relate to a processing chamber. The processing chamber includes a chamber body having a top wall, a bottom wall and at least one side wall defining a processing space. The processing chamber also includes a mixing plate adjacent to a rear plate of a showerhead. The mixing plate has a rear surface and a front surface defining the thickness of the mixing plate and a mixing channel, the mixing channel including a top portion and a bottom portion defining the length of the mixing channel. The top portion has a first inner diameter, and the bottom portion has a second inner diameter that is not equal to the first inner diameter. The mixing plate further includes at least two gas inlets in fluid communication with the top portion of the mixing channel. The processing chamber also includes a mixer disposed within the thickness of the mixing plate in the top portion of the mixing channel. The mixer has a top plate and a mixer rod extending from the top plate. The mixer rod includes a top and a bottom defining the length of the mixer rod. The top of the mixer rod is connected to the top plate and extends into the top portion of the mixing channel. The mixer includes a plurality of blades positioned along the length of the mixer rod. The processing chamber also includes a substrate support spaced a distance from the front plate of the showerhead. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The disclosure briefly summarized above may be described in more detail with reference to a number of embodiments, some of which are illustrated in the accompanying drawings, in order to understand the above-mentioned features of the disclosure in more detail. It should be noted, however, that the accompanying drawings only illustrate typical embodiments of the disclosure and therefore should not be considered to limit the scope of the disclosure, as the disclosure may allow for other equally effective embodiments. In the illustrations of the accompanying drawings, the embodiments described herein are shown by way of example and not limitation, and like reference numerals indicate like elements.

[0010] Figure 1 A gas distribution apparatus according to one or more embodiments of the present disclosure is shown;

[0011] Figure 2 Shown include Figure 1A processing chamber of the gas distribution apparatus shown;

[0012] Figure 3 Shows Figure 1 an enlarged view of region III of the gas distribution apparatus shown; and

[0013] Figure 4 A mixer according to one or more embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0014] Before describing several exemplary embodiments of the present disclosure, it should be understood that the present disclosure is not limited to the details of construction or processing steps set forth in the following description. The present disclosure is capable of other embodiments and can be practiced or carried out in various ways.

[0015] The term "about" as used herein means close to or approximately, and in the context of a stated numerical value or range means a variation of ±15% or less of the value. For example, values ​​that differ by ±14%, ±10%, ±5%, ±2%, or ±1% will satisfy the definition of about.

[0016] As used in this specification and the appended claims, the term "substrate" or "wafer" refers to a surface or portion of a surface on which processing is performed. It will also be understood by those skilled in the art that reference to a substrate may also refer to only a portion of a substrate unless the context clearly indicates otherwise. In addition, reference to depositing on a substrate may refer to both a bare substrate and a substrate having one or more films or features deposited or formed thereon.

[0017] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which a thin film process is performed during the manufacturing process. For example, the substrate surface on which the process can be performed includes materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials, such as metals, metal nitrides, metal alloys and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. The substrate can be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate (or otherwise generate or inject a target chemical moiety to impart chemical functionality), anneal and / or bake the substrate surface. In addition to processing directly on the surface of the substrate itself, in the present disclosure, any film processing step disclosed can also be performed on a bottom layer formed on the substrate, as disclosed in more detail below, and the term "substrate surface" is intended to include the bottom layer indicated by the context. Therefore, for example, in the case where a film / layer or a portion of a film / layer has been deposited on the substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface. The materials contained on a given substrate surface will depend on the materials being deposited and the specific chemistry used.

[0018] As used in this specification and the appended claims, the terms "precursor," "reactant," "reactant gas," and the like are used interchangeably to refer to any gaseous substance that can react with a substrate surface.

[0019] As used herein, "atomic layer deposition" or "cyclic deposition" refers to sequential exposure of two or more reactive compounds to deposit a layer of material on the surface of a substrate. The substrate or a portion of the substrate is separately exposed to two or more reactive compounds introduced into a reaction zone of a processing chamber. In a time-domain ALD process, the exposure to each reactive compound is separated by a time delay to allow each compound to adhere and / or react on the substrate surface and then be removed from the processing chamber. That is, these reactive compounds are exposed to the substrate in sequence. In a spatial ALD process, different portions of the substrate surface or materials on the substrate surface are simultaneously exposed to two or more reactive compounds, so that any given point on the substrate is substantially not exposed to more than one reactive compound at the same time. As used in this specification and the appended claims, the term "substantially" used in this regard means that, as will be understood by those skilled in the art, there is the possibility that a small portion of the substrate may be exposed to multiple reactive gases simultaneously due to diffusion, and the simultaneous exposure is unintentional.

[0020] In one aspect of a time-domain ALD process, a first reactive gas (i.e., a first precursor or compound A) is pulsed into a reaction zone followed by a first time delay. Next, a second precursor or compound B is pulsed into the reaction zone followed by a second delay. During each time delay, a purge gas such as argon is introduced into the processing chamber to purge the reaction zone or otherwise remove any residual reactive compounds or reaction byproducts from the reaction zone. Alternatively, the purge gas may flow continuously throughout the deposition process such that only the purge gas flows during the time delay between pulses of the reactive compound. The reactive compounds are pulsed alternately until a desired film or film thickness is formed on the substrate surface. In either scenario, an ALD process of pulsing compound A, purge gas, compound B, and purge gas is a cycle. The cycle may start with either compound A or compound B and continue the corresponding sequence of cycles until a film having a predetermined thickness is achieved.

[0021] In an embodiment of a spatial ALD process, a first reactant gas and a second reactant gas (e.g., nitrogen) are delivered to the reaction zone simultaneously, but separated by an inert gas curtain and / or a vacuum curtain. The substrate moves relative to the gas delivery device so that any given point on the substrate is exposed to the first reactant gas and the second reactant gas.

[0022]

[0013] Embodiments of the present disclosure relate to gas distribution apparatus for use in chemical vapor deposition (CVD) type processes.

[0013] One or more embodiments of the present disclosure relate to atomic layer deposition (ALD) processes and apparatus incorporating the gas distribution apparatus described herein.

[0023] Embodiments of the present disclosure provide gas inlets and mixers configured to provide improved mixing uniformity while maintaining a low system pressure drop. Some embodiments improve uniformity by describing improved inlet arrangements. Some embodiments improve uniformity by providing a larger mixing space.

[0024] In conventional processing, two gases enter a mixer in a gas injector along with a carrier gas (e.g., argon). However, the gases are not well mixed, resulting in a high degree of non-uniformity. For example, in a conventional injector assembly with three radial inlets equally spaced around the injector inlet, the non-uniformity is high (e.g., up to 40%). Embodiments of the present disclosure provide injector inlet configurations that improve the non-uniformity of gas mixing before the mixture is introduced into the processing region above the substrate surface.

[0025] In one or more embodiments, the feed gas carrying the chemical substance arrives at the upper boost chamber (or the lower boost chamber in different configurations) from a mixing channel that is fluidly connected to the central area of ​​the gas space, and the mixing channel has a mixer disposed inside the mixing channel to increase the temperature of the gas flow. The gas flows through the mixing channel and the mixer into the processing space. The processing gas interacts with the surface of the wafer, resulting in surface treatment (deposition or etching). The processing gas with by-products is discharged through the outlet. In this way, the mixer advantageously increases the temperature of the gas flow, so that there is no need to preheat the gas, thereby resulting in improved temperature uniformity in the processing chamber. The presence of the mixer in the mixing channel effectively increases the incoming gas flow, which is cost-effective because no additional preheating system is required. In addition, the mixer does not affect the delivery time of the precursor.

[0026] Reference Figure 1 and Figure 2 , one or more embodiments of the present disclosure relate to a gas distribution apparatus 100 configured to provide improved mixing uniformity while maintaining a low system pressure drop. In some embodiments, the gas distribution apparatus 100 includes a mixing plate 110 adjacent to a rear plate 132 of a showerhead 130. The mixing plate 110 has a rear surface 112 and a front surface 114 that define a thickness of the mixing plate. The mixing plate 110 can have any suitable thickness. In some embodiments, the thickness of the mixing plate is in a range of 60 mm to 85 mm, including in a range of 60 mm to 80 mm, or in a range of 70 mm to 80 mm.

[0027] The mixing plate 110 includes a mixing channel 120, which includes a top portion 122 and a bottom portion 124 that define a mixing channel length. The mixing channel length can be any suitable length. In some embodiments, the mixing channel length is in the range of 200 mm to 350 mm, including in the range of 225 mm to 325 mm, or in the range of 250 mm to 300 mm.

[0028] The top portion 122 of the mixing channel 120 has a first inner diameter ID1, and the bottom portion 124 of the mixing channel 120 has a second inner diameter ID2 that is not equal to the first inner diameter ID1. Embodiments of the present disclosure advantageously improve uniformity by providing a larger mixing space, for example when the first inner diameter ID1 is greater than the second inner diameter ID2. In some embodiments, the first inner diameter ID1 is at least 1.5 times the second inner diameter ID2. In some embodiments, the first inner diameter ID1 is 2 times the second inner diameter ID2. In one or more specific embodiments, the first inner diameter ID1 is in the range of 20 mm to 40 mm, and the second inner diameter ID2 is in the range of 10 mm to 25 mm.

[0029] Embodiments of the present disclosure provide injector inlet configurations that improve the non-uniformity of gas mixing before the mixture is introduced into the processing region above the substrate surface. In some embodiments, the mixing plate 110 includes at least two gas inlets 125 in fluid communication with the top portion 122 of the mixing channel 120. In some embodiments, each of the at least two gas inlets 125 is configured to flow a different gas.

[0030] In some embodiments, there are two gas inlets 125 arranged at equally spaced angles relative to the central axis 150A of the mixing channel 120. In some embodiments, two gas inlets 125 are provided on the same side of the mixing channel 120 relative to the central axis 150A of the mixing channel 120. In some embodiments, two gas inlets 125 are provided on the same side of the mixing channel 120 relative to the central axis 150A, and the two gas inlets 125 provided on the same side of the mixing channel 120 are also arranged at equally spaced angles relative to the central axis 150A of the mixing channel 120. In some embodiments, three gas inlets 125 are arranged at equally spaced angles relative to the central axis 150A of the mixing channel 120 to produce a swirling flow pattern.

[0031] In embodiments where the mixing plate 110 has two gas inlets 125, at least one of the two gas inlets 125 is radially aligned with the top portion 122 of the mixing channel 120. In other embodiments where the mixing plate 110 has two gas inlets 125, each of the two gas inlets 125 is radially aligned with the top portion 122 of the mixing channel 120. In some embodiments, there are three gas inlets 125, and each of the three gas inlets 125 includes three inlets radially aligned with the top portion 122 of the mixing channel 120. In other words, in embodiments where there are three gas inlets 125 and each of the three gas inlets 125 includes three inlets radially aligned with the top portion 122 of the mixing channel 120, there are nine gas inlets 125 radially aligned with the top portion 122 of the mixing channel 120.

[0032] In embodiments where the mixing plate 110 has two gas inlets 125, at least one of the two gas inlets 125 is tangentially aligned with the top portion 122 of the mixing channel 120. In other embodiments where the mixing plate 110 has two gas inlets 125, each of the two gas inlets 125 is tangentially aligned with the top portion 122 of the mixing channel 120. In some embodiments, there are three gas inlets 125, and each of the three gas inlets 125 includes three inlets tangentially aligned with the top portion 122 of the mixing channel 120. In other words, in embodiments where there are three gas inlets 125 and each of the three gas inlets 125 includes three inlets tangentially aligned with the top portion 122 of the mixing channel 120, there are nine gas inlets 125 tangentially aligned with the top portion 122 of the mixing channel 120.

[0033] The gas distribution device further includes a mixer 150 disposed within the thickness of the mixing plate 110 in the top portion 122 of the mixing channel 120. The mixer 150 has a top plate 152 and a mixer rod 154 extending from the top plate 152. The top plate 152 includes a top surface 152A and a bottom surface 152B that define the thickness of the top plate 152. The top plate 152 can have any suitable thickness. In some embodiments, the thickness of the top plate 152 is in the range of 4 mm to 10 mm, including in the range of 5 mm to 9 mm, or in the range of 6 mm to 8 mm.

[0034] In some embodiments, the top plate 152 of the mixer 150 includes at least one top inlet 151 extending through the thickness of the top plate 152 into the mixing channel 120. In some embodiments, the at least one top inlet 151 is configured to flow a different gas than one of the at least two gas inlets 125. In some embodiments, the at least one top inlet 151 is configured to flow a different gas than each of the at least two gas inlets 125.

[0035] The mixer rod 154 includes a top 155 and a bottom 156 that define the length of the mixer rod. The mixer rod 154 can be any suitable shape. The mixer rod length can be any suitable length. In some embodiments, the mixer rod length is in the range of 60 mm to 150 mm, including in the range of 70 mm to 140 mm, or in the range of 80 mm to 130 mm, or in the range of 90 mm to 120 mm.

[0036] In some embodiments, the top 155 of the mixer rod 154 is connected to the top plate 152 and extends into the top portion 122 of the mixing channel 120. In a specific embodiment, the top 155 of the mixer rod 154 has a flat surface to provide a connection with the bottom surface of the top plate 152.

[0037] The mixer rod 154 is disposed inside the mixing channel 120 to increase the temperature of the gas flow. The mixer rod 154 can have any shape and / or size so that it fits inside the mixing channel 120. The mixer rod 154 can be, for example, straight, round, square, oval, rectangular or oblong. In addition, the overall shape of the mixer rod 154 can be composed of repeating units that are parallel, perpendicular or concentric to each other. In one or more embodiments, the mixer rod 154 has an overall shape in which there is substantially no dead zone that inhibits gas flow. As used in this specification and the appended claims, the term "substantially no dead zone" means that the flow of gas is inhibited by less than about 10%, less than about 5%, or less than about 1% due to the dead zone.

[0038] In some embodiments, the mixer rod 154 is located at the entrance of the top portion 122 of the mixing channel 120. In some embodiments, the mixer rod 154 is completely located within the top portion 122 of the mixing channel 120. In some embodiments, the top 155 of the mixer rod 154 is connected to the top plate 152 and extends into the top portion 122 of the mixing channel 120, and the bottom 156 of the mixer rod 154 extends into the top portion 122 of the mixing channel 120. In other embodiments, the top 155 of the mixer rod 154 is connected to the top plate 152 and extends into the top portion 122 of the mixing channel 120, and the bottom 156 of the mixer rod 154 extends into the bottom portion 124 of the mixing channel 120.

[0039] In some embodiments, the mixer 150 includes a plurality of blades 158 positioned along the length of the mixer rod. The mixer 150 can have any suitable number of blades 158 along the length of the mixer rod. The blades 158 of some embodiments occupy a range of 90° to 270° of a circle and are positioned at different z positions along the length of the mixer rod. In some embodiments, one or more of the plurality of blades 158 are oriented at an angle of 180° relative to the length of the mixer rod in the z direction. In some embodiments, blades 158 in the range of 2 to 8 are arranged at equal intervals along the length of the mixer rod. In one or more specific embodiments, blades 158 in the range of 3 to 6 are arranged at equal intervals along the length of the mixer rod. In some embodiments, 4 blades 158 are arranged at equal intervals along the length of the mixer rod.

[0040] In some embodiments, the front plate 138 and the rear plate 132 of the showerhead 130 are spaced apart to form a gas space 135. In some embodiments, the front plate 138 of the showerhead 130 has an inner surface 137 adjacent to the gas space and an outer surface 139 having a plurality of holes 136 extending therethrough. In some embodiments, the gas space has a central region 135A and an outer region 135B that define the length of the gas space 135. In one or more embodiments, the mixing channel 120 is in fluid communication with the central region 135A of the gas space 135.

[0041] In one or more embodiments, the rear plate 132 of the showerhead 130 is inclined toward the front plate 138 at the outer region 135B of the gas space 135 to form a funnel shape. For example, in some embodiments, the rear plate 132 of the showerhead 130 is tapered toward the front plate 138 at the outer region 135B of the gas space 135, so that the showerhead 130 is cone-shaped or funnel-shaped. In such embodiments, the width of the front plate 138 is greater than the width of the rear plate 132.

[0042] In one or more embodiments, showerhead 130 is funnel-shaped, and mixing channel 120 generates a vortex that spirals outward from central region 135A of gas space 135 to outer region 135B. In some embodiments, the vortex helps mix the gas within gas space 135.

[0043] In some embodiments, the showerhead 130 further includes at least one side wall 134 that connects the front plate 138 to the rear plate 132 and defines a peripheral edge 133 of an outer region 135B of the gas space 135. In some embodiments, at least one side wall 134 is an insulator to electrically separate the front plate 138 from the rear plate 132. The insulator may be any insulator known to those skilled in the art.

[0044] In other embodiments not shown, the showerhead 130 does not include at least one side wall 134 , such that the front plate 138 is directly connected to the rear plate 132 , thereby defining the gas space 135 .

[0045] In one or more embodiments, the gas distribution apparatus 100 includes a substrate support 222 or pedestal spaced a distance from the front plate 138 of the showerhead 130. In some embodiments, the substrate support 222 includes a heater (not shown). In some embodiments, the substrate support 222 supports a substrate 224. The temperature of the substrate 224 and the substrate processing region 226 can be partially controlled by the substrate support 222. The substrate support 222 can be thermally coupled to a cooling / heating unit (not shown) that adjusts the temperature of the substrate support 222 and the substrate 224 to, for example, about -100°C to about 100°C.

[0046] In some embodiments, one of the front plate 138 and the rear plate 132 is connected to an RF power source (not shown), and the other of the front plate 138 and the rear plate 132 is connected to an electrical ground to generate plasma within the gas space 135. Plasma can be ignited in the gas space 135 or in the substrate processing area 226 below the showerhead 130. In one or more embodiments, plasma can exist in the gas space 135 to generate precursors from the inflow of process gas that has traveled through the mixing channel 120 including the mixer 150. An AC voltage, typically in the radio frequency (RF) range, is applied between the rear plate 132 and the front plate 138 of the showerhead 130 to ignite plasma in the gas space 135 during deposition. The RF power source generates a high RF frequency of 13.56 MHz, but other frequencies may also be generated alone or in combination with the 13.56 MHz frequency.

[0047] In some embodiments, the frequency of the RF energy supplied by the RF power supply can range from about 2 MHz to about 60 MHz, or non-limiting frequencies such as 2 MHz, 13.56 MHz, 27.12 MHz, or 60 MHz can be used, for example. In some embodiments, multiple RF power supplies (i.e., two or more) can be provided to provide RF energy at more than one frequency.

[0048] Additional embodiments of the present disclosure relate to a processing chamber 200 including a gas distribution apparatus 100 configured to provide improved mixing uniformity while maintaining a low system pressure drop. In some embodiments, the processing chamber 200 includes a chemical vapor deposition (CVD) apparatus. Figure 2 As shown, the processing chamber 200 includes a chamber body 201 having a top wall 204, a bottom wall 206, and at least one side wall 208 defining a processing space 212. In some embodiments, the processing chamber 200 further includes the gas distribution apparatus 100 described herein. The processing chamber 200 also includes a substrate support 222 spaced a distance from the front plate 138 of the showerhead 130.

[0049] In one or more embodiments, Figure 2 As shown, the processing chamber 200 is controlled by a controller 290. In an exemplary embodiment, the controller 290 includes a hard disk drive, a floppy disk drive, and a processor. The processor includes a single board computer (SBC), analog and digital input / output boards, an interface board, and a stepper motor controller board. The various parts of the processing chamber 200 conform to the Versa Modular European (VME) standard, which defines the board, card rack, and connector size and type. The VME standard also defines the bus structure as having a 16-bit data bus and a 24-bit address bus.

[0050] The controller 290 controls all activities of the processing chamber 200. The controller executes system control software, which is a computer program stored in a computer readable medium. The medium may be a hard drive or other type of memory. The computer program includes a set of instructions that specifies the timing, gas mixture, chamber pressure, chamber temperature, RF power level, susceptor position, and other parameters of a particular process. Other computer programs stored on other storage devices including, for example, a floppy disk or other suitable drive may also be used to instruct the system controller.

[0051] The controller 290 includes a central processing unit (CPU) 292, a memory 294, one or more support circuits 296 for controlling the process sequence and regulating gas flow, and input / output (I / O) 298. The CPU 292 can be any form of general purpose computer processor useful in an industrial setting. The software routines can be stored in the memory 294, such as a random access memory, a read-only memory, a floppy disk, or a hard drive, or other form of digital storage. The support circuits 296 are coupled to the CPU 292 by conventional means and can include caches, clock circuits, input / output systems, power supplies, and the like.

[0052] The memory 294 may include one or more of a transient memory (e.g., random access memory) and a non-transient memory (e.g., storage). The memory 294 or computer-readable medium of the processor may be one or more readily accessible memories such as random access memory (RAM), read-only memory (ROM), a floppy disk, a hard disk, or any other form of digital storage located locally or remotely. The memory 294 may retain a set of instructions operable by the processor to control parameters and components of the system.

[0053] Processing can be stored in memory 294 as software routines, which, when executed by a processor, cause the processing chamber to perform the processing of the present disclosure. The software routines may also be stored and / or executed by a second processor (not shown), which is located at a remote location of the hardware controlled by the processor. Some or all of the methods of the present disclosure may also be performed in hardware. Therefore, processing may be implemented in software and performed using a computer system, may be implemented in hardware (as, for example, an ASIC or other type of hardware implementation) or as a combination of software and hardware. When executed by a processor, the software routines convert a general-purpose computer into a special-purpose computer (controller 290) that controls the operation of the chamber to perform processing.

[0054] The controller 290 of some embodiments is configured to interact with hardware to perform programmed functions. For example, the controller 290 can be configured to control one or more valves, motors, actuators, power supplies, etc.

[0055] In some embodiments, a controller 290 is coupled to the chamber apparatus 221. The controller has one or more configurations to control various functions and processes. In some embodiments, the configuration is selected from a first configuration to rotate the substrate support about a central axis, a second configuration to provide a gas flow to a non-plasma processing region, a third configuration to provide a gas flow to a plasma processing region, a fourth configuration to provide power to the plasma processing region to ignite a plasma, and / or a fifth configuration to pulse the power to the plasma processing region to generate an on time and an off time for the plasma processing region.

[0056] One or more embodiments of the present disclosure relate to a method for depositing a film on a substrate. In one or more embodiments, the method includes flowing one or more of a precursor, an oxidant, or a reductant through a showerhead having: a front plate and a rear plate spaced apart to form a gas space, the front plate having an inner surface adjacent to the gas space and an outer surface having a plurality of holes extending therethrough, the gas space having a central region and an outer region; an inlet in fluid communication with the central region of the gas space, the inlet having an interior and an exterior; and a mixer disposed within the inlet for increasing the temperature of the gas flow. The flow is then delivered from the front plate of the showerhead to the substrate, and a film is formed on the substrate. In some embodiments, the mixer increases the temperature of the flow without affecting the amount of time it takes to deliver the flow.

[0057] According to one or more embodiments, the substrate is processed before and / or after the layer is formed. The processing can be performed in the same chamber or in one or more separate processing chambers. In some embodiments, the substrate is moved from the first chamber to a separate second chamber for further processing. The substrate can be moved directly from the first chamber to a separate processing chamber, or can be moved from the first chamber to one or more transfer chambers and then to a separate processing chamber. Therefore, the processing equipment may include multiple chambers connected to a transfer station. Such equipment may be referred to as a "cluster tool" or a "cluster system" or the like.

[0058] Typically, a cluster tool is a modular system that includes multiple chambers that perform various functions, including substrate centering and orientation, degassing, annealing, deposition, and / or etching. According to one or more embodiments, the cluster tool includes at least a first chamber and a central transfer chamber. The central transfer chamber can house a robot that can shuttle substrates between processing chambers and a load lock chamber. The transfer chamber is typically maintained under vacuum conditions and provides an intermediate platform for shuttle substrates from one chamber to another and / or to and from a load lock chamber located at the front end of the cluster tool. Two well-known cluster tools that may be suitable for use in the present disclosure are and Both are available from Applied Materials, Inc., Santa Clara, California, USA. However, the exact arrangement and combination of chambers may be varied to perform specific steps of the processes described herein. Other process chambers that may be used include, but are not limited to, cyclic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, chemical cleaning, thermal processing such as RTP, plasma nitridation, degassing, orientation, hydroxylation, and other substrate processing. By performing the processing in chambers on a cluster tool, contamination of the surface of the substrate with atmospheric impurities can be avoided without the need for oxidation prior to deposition of subsequent films.

[0059] According to one or more embodiments, the substrate is continuously under vacuum or "load lock" conditions and is not exposed to ambient air when moving from one chamber to the next. Thus, the transfer chamber is under vacuum and "pumped" at vacuum pressure. An inert gas may be present in the processing chamber or the transfer chamber. In some embodiments, an inert gas is used as a purge gas to remove some or all of the reactants. According to one or more embodiments, a purge gas is injected at the outlet of the deposition chamber to prevent reactants from moving from the deposition chamber to the transfer chamber and / or additional processing chambers. Thus, the inert gas flow forms a curtain at the outlet of the chamber.

[0060] The substrates may be processed in a single substrate deposition chamber, where a single substrate is loaded, processed, and unloaded before processing another substrate. The substrates may also be processed in a continuous manner, similar to a conveyor system, where multiple substrates are individually loaded into a first portion of the chamber, moved through the chamber, and unloaded from a second portion of the chamber. The shape of the chamber and associated conveyor system may form a straight path or a curved path. Additionally, the processing chamber may be a turntable, where multiple substrates are moved about a central axis and exposed to deposition, etching, annealing, cleaning, etc., throughout the turntable path.

[0061] During processing, the substrate may be heated or cooled. Such heating or cooling may be achieved by any suitable means, including but not limited to changing the temperature of the substrate support and flowing heated or cooled gas to the substrate surface. In some embodiments, the substrate support includes a heater / cooler that can be controlled to conductively change the substrate temperature. In one or more embodiments, the gas (reactive gas or inert gas) used is heated or cooled to locally change the substrate temperature. In some embodiments, the heater / cooler is positioned adjacent to the substrate surface in the chamber to convectively change the substrate temperature.

[0062] The substrate may also be stationary or rotated during processing. A rotating substrate may be rotated (about a substrate axis) continuously or in discrete steps. For example, the substrate may be rotated throughout processing, or may be rotated in small amounts between exposures to different reactive or purge gases. Rotating the substrate during processing (continuously or stepwise) may help produce a more uniform deposition or etch by minimizing the effects of local variations in, for example, gas flow geometry.

[0063] For ease of description, spatially relative terms, such as "below," "below," "lower," "above," "upper," etc., may be used herein to describe the relationship of one element or feature to another element or feature as shown in the figure. It should be understood that in addition to the orientation depicted in the figure, spatially relative terms are also intended to cover different orientations of the device in use or operation. For example, if the device in the figure is turned over, the elements described as being "below" or "below" other elements or features will be oriented to be "above" other elements or features. Therefore, the exemplary term "below" can include both orientations of above and below. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used in this article are interpreted accordingly.

[0064] In the context of describing the materials and methods discussed herein (particularly in the context of the claims below), the use of the terms "a", "an" and "the" and similar references should be interpreted as covering both singular and plural forms, unless otherwise indicated herein or clearly contradicted by the context. Unless otherwise indicated herein, the description of the numerical range herein is intended only to be used as a shorthand method to refer to each individual value falling within the range, respectively, and each individual value is incorporated into the specification as if it were individually described herein. Unless otherwise indicated herein or clearly contradicted by the context, all methods described herein can be performed in any suitable order. Unless otherwise required, the use of any and all examples or exemplary language (e.g., "such as") provided herein is intended only to better illustrate the materials and methods, and is not intended to limit the scope. None of the language in the specification should be interpreted as indicating that any unclaimed element is essential to the practice of the disclosed materials and methods.

[0065] References throughout the specification to "one embodiment," "certain embodiments," "one or more embodiments," or "an embodiment" mean that the particular features, structures, materials, or characteristics associated with the embodiment described are included in at least one embodiment of the present disclosure. Thus, phrases such as "in one or more embodiments," "certain embodiments," "in an embodiment," or "in an embodiment" appearing in various places throughout the specification do not necessarily refer to the same embodiment of the present disclosure. In one or more embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner.

[0066] Although the disclosure herein has been described with reference to specific embodiments, it should be understood that these embodiments are only used to illustrate the principles and applications of the disclosure. It will be appreciated by those skilled in the art that various modifications and changes may be made to the methods and apparatus of the disclosure without departing from the spirit and scope of the disclosure. Therefore, the disclosure is intended to include modifications and changes within the scope of the appended claims and their equivalents.

Claims

1. A gas distribution device comprising: a mixing plate adjacent to a rear plate of the showerhead, the mixing plate having a rear surface and a front surface defining a thickness of the mixing plate, the mixing plate having a mixing channel, the mixing channel including a top portion and a bottom portion defining a length of the mixing channel, the top portion having a first inner diameter, the bottom portion having a second inner diameter that is not equal to the first inner diameter, the mixing plate including at least two gas inlets in fluid communication with the top portion of the mixing channel; as well as a mixer disposed within the thickness of the mixing plate in the top portion of the mixing channel, the mixer having a top plate and a mixer rod extending from the top plate, the mixer rod including a top and a bottom defining a length of the mixer rod, the top of the mixer rod being connected to the top plate and extending into the top portion of the mixing channel, the mixer including a plurality of blades positioned along the length of the mixer rod.

2. The gas distribution device of claim 1, wherein two gas inlets are provided on the same side of the mixing channel relative to a central axis of the mixing channel.

3. The gas distribution apparatus of claim 1, wherein two gas inlets are arranged at equally spaced angles relative to a central axis of the mixing channel.

4. The gas distribution apparatus of claim 1, wherein three inlets are arranged at equally spaced angles relative to a central axis of the mixing passage to produce a swirl flow pattern.

5. The gas distribution apparatus of claim 1, wherein each of the at least two gas inlets is configured to flow a different gas.

6. The gas distribution apparatus of claim 1, wherein at least one of the two gas inlets is radially aligned with the top portion of the mixing channel.

7. The gas distribution apparatus of claim 6, wherein there are three gas inlets and each of the three gas inlets comprises three inlets radially aligned with the top portion of the mixing channel.

8. The gas distribution apparatus of claim 1, wherein the first inner diameter is at least 1.5 times greater than the second inner diameter.

9. The gas distribution apparatus of claim 8, wherein the first inner diameter is twice the second inner diameter.

10. The gas distribution apparatus of claim 9, wherein the first inner diameter is in the range of 20 mm to 40 mm, and the second inner diameter is in the range of 10 mm to 25 mm.

11. The gas distribution apparatus of claim 1 , wherein one or more blades of the plurality of blades are oriented at an angle of 180° relative to the mixer rod length in the z-direction.

12. The gas distribution apparatus of claim 1 wherein there are in the range of 3 to 6 vanes arranged at equal intervals along the length of the mixer rod.

13. The gas distribution apparatus of claim 1, wherein the front plate and the rear plate of the showerhead are spaced apart to form a gas space.

14. The gas distribution apparatus of claim 13, wherein the front plate has an inner surface adjacent the gas space and an outer surface having a plurality of holes extending therethrough.

15. The gas distribution apparatus of claim 14, wherein the gas space has a central region and an outer region defining a length of the gas space.

16. A processing chamber comprising: a chamber body having a top wall, a bottom wall and at least one side wall defining a processing space; a mixing plate adjacent to a rear plate of the showerhead, the mixing plate having a rear surface and a front surface defining a thickness of the mixing plate, the mixing plate having a mixing channel, the mixing channel including a top portion and a bottom portion defining a length of the mixing channel, the top portion having a first inner diameter, and the bottom portion having a second inner diameter that is not equal to the first inner diameter, the mixing plate including at least two gas inlets in fluid communication with the top portion of the mixing channel, a mixer disposed within the thickness of the mixing plate in the top portion of the mixing channel, the mixer having a top plate and a mixer rod extending from the top plate, the mixer rod including a top and a bottom portion defining a length of the mixer rod, the top portion of the mixer rod being connected to the top plate and extending into the top portion of the mixing channel, the mixer including a plurality of blades positioned along the length of the mixer rod; as well as A substrate support is provided, wherein the substrate support is spaced a distance from the front plate of the shower head.

17. The processing chamber of claim 16, wherein two gas inlets are disposed on the same side of the mixing channel relative to a central axis of the mixing channel, or two gas inlets are disposed at equally spaced angles relative to the central axis of the mixing channel.

18. The processing chamber of claim 16, wherein three inlets are arranged at equally spaced angles relative to a central axis of the mixing channel to produce a swirling flow pattern.

19. The processing chamber of claim 16, wherein at least one of the two gas inlets is radially aligned with the top portion of the mixing channel.

20. The processing chamber of claim 16, wherein the front plate and the rear plate of the showerhead are spaced apart to form a gas space, the front plate having an inner surface adjacent to the gas space and an outer surface having a plurality of holes extending therethrough, and the gas space having a central region and an outer region defining a length of the gas space.

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