Electrode plate, electrode assembly and plasma processing device

Abstract

An electrode plate, an electrode assembly, and a plasma processing device that suppress changes over time are provided. An electrode plate for a parallel plate type plasma processing device, comprising a main body, the main body having a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces, the plurality of inner side surfaces defining a plurality of gas flow holes that penetrate the main body from the first surface to the second surface, the first surface being made of a material having a first resistance value, and the second surface being made of a material having a second resistance value different from the first resistance value.

Description

Technical Field

[0001] The present disclosure relates to an electrode plate, an electrode assembly, and a plasma processing device. Background Art

[0002] Patent document 1 discloses a film forming device, which includes: a shower head having an electrode plate and an electrode support body, wherein the electrode plate is formed with a plurality of gas ejection holes and has a function as an upper electrode, and the electrode support body is formed with gas flow holes connected to the gas ejection holes and supports the electrode plate; and a high-frequency power supply for supplying high-frequency electric power to the electrode support body of the shower head.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent document 1: Japanese Patent Application Publication No. 2020-17697. Summary of the invention

[0006] Problem that the invention aims to solve

[0007] In one aspect, the present disclosure provides an electrode plate, an electrode assembly, and a plasma processing apparatus that suppress changes over time.

[0008] Technical solutions to the problem

[0009] In order to solve the above-mentioned problem, according to one method, an electrode plate for a parallel plate type plasma processing device is provided, which includes a main body portion, wherein the main body portion has a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces, wherein the plurality of inner side surfaces define a plurality of gas flow holes that penetrate the main body portion from the first surface to the second surface, the first surface is composed of a material having a first resistance value, and the second surface is composed of a material having a second resistance value different from the first resistance value.

[0010] Effects of the Invention

[0011] According to one aspect, an electrode plate, an electrode assembly, and a plasma processing apparatus that suppress temporal variation can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is an example of a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0013] Figure 2 This is an example of a schematic cross-sectional view of a shower head.

[0014] Figure 3 This is another example of a schematic cross-sectional view of a shower head.

[0015] Figure 4This is an example of a diagram for explaining a method of joining electrode plates having gas flow holes having a through-hole structure.

[0016] Figure 5 This is an example of a diagram for explaining another method of joining an electrode plate having gas flow holes with a through-hole structure.

[0017] Figure 6 This is an example of a diagram for explaining a method of joining an electrode plate having gas flow holes with a branched structure.

[0018] Figure 7 This is an example of a diagram for explaining another method of joining an electrode plate having gas flow holes with a branched structure.

[0019] Fig. 8A It is a schematic diagram showing the state near the first surface of the electrode plate of the reference example.

[0020] Figure 8B It is a schematic diagram showing the state near the first surface of the electrode plate of the reference example.

[0021] Fig. 9A It is a schematic diagram showing a state near the first surface of the electrode plate according to the second embodiment.

[0022] Fig. 9B It is a schematic diagram showing a state near the first surface of the electrode plate according to the second embodiment. DETAILED DESCRIPTION

[0023] Hereinafter, the mode for implementing the present disclosure will be described with reference to the drawings. In each of the drawings, the same components are sometimes denoted by the same reference numerals, and repeated descriptions are omitted.

[0024] Hereinafter, a configuration example of a plasma processing system will be described. Figure 1 This is an example of a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus 1 .

[0025] The plasma processing system includes a capacitively coupled parallel plate type plasma processing device 1 and a control unit 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30 and an exhaust system 40. In addition, the plasma processing device 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to be able to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is arranged in the plasma processing chamber 10. The shower head 13 is arranged above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10 and the substrate support unit 11. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10 .

[0026] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 in a manner of surrounding the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0027] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. Among them, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck and an annular insulating component, may also have an annular area 111b. In this case, the ring assembly 112 can be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or the DC (Direct Current) power supply 32 described later may also be arranged in the ceramic component 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. In the case where the bias RF signal and / or DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may also function as multiple lower electrodes. In addition, the electrostatic electrode 1111b may be used as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0028] The ring assembly 112 includes one or more ring components. In one embodiment, the one or more ring components include one or more edge rings and at least one cover ring. The edge ring is made of conductive material or insulating material, and the cover ring is made of insulating material.

[0029] In addition, the substrate support portion 11 may also include a temperature adjustment module, which is configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may also include a heat transfer gas supply portion, which is configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0030] The shower head 13 is configured to be able to introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, a plurality of gas flow holes 13c and a plurality of gas flow holes 13d. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas flow holes 13d through the gas diffusion chamber 13b and the plurality of gas flow holes 13c. In addition, the shower head 13 includes at least one upper electrode. Among them, in addition to the shower head 13, the gas introduction part may also include one or more side gas injection parts (SGI: Side Gas Injector) installed in one or more openings formed on the side wall 10a.

[0031] The shower head 13 includes an electrode plate 131, an electrode support 132, and a conductive connection member 133 (see FIG. Figure 2 The shower head 13 is supported at an upper portion of the plasma processing chamber 10 via an insulating member 136 .

[0032] The electrode plate 131 is disposed so as to face the substrate W supported by the substrate support portion 11. The electrode plate 131 functions as an upper electrode. A plurality of gas flow holes 13d are formed in the electrode plate 131. The electrode plate 131 is formed of a material containing Si (eg, Si, SiC, etc.).

[0033] The electrode support 132 is disposed above the electrode plate 131 and supports the electrode plate 131 in a detachable manner. A gas diffusion chamber 13b is formed inside the electrode support 132. In addition, a plurality of gas flow holes 13c are formed inside the electrode support 132, which are connected from the gas diffusion chamber 13b to the gas flow holes 13d of the electrode plate 131. The electrode support 132 is made of a conductive material such as a metal or a metal matrix composite material (MMC: Metal Matrix Composites). As a metal, for example, aluminum can be used. In addition, as a metal matrix composite material, for example, a metal matrix composite material composed of ceramics and aluminum can be used. In addition, the surface of the electrode support 132 can also be subjected to anodizing treatment (aluminum-resistant treatment). In addition, the electrode support 132 is in thermal contact with the electrode plate 131 to cool the electrode plate 131. The electrode support 132 is also called a heat sink.

[0034] In addition, a conductive connection member 133 (see FIG. 1 ) described later is disposed between the electrode plate 131 and the electrode support 132. Figure 2 The electrode plate 131 and the electrode support 132 are electrically connected via a conductive connection member 133 .

[0035] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from the corresponding gas source 21 to the shower head 13 via the corresponding flow controller 22. Each flow controller 22 may also include a mass flow controller or a pressure-controlled flow controller. In addition, the gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsing the flow of at least one processing gas.

[0036] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and ion components in the formed plasma can be introduced into the substrate W.

[0037] In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to at least one lower electrode and / or upper electrode via at least one impedance matching circuit, and is configured to generate a generation source RF signal (generation source RF electric power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may also be configured to generate a plurality of generation source RF signals having different frequencies. The generated one or more generation source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0038] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may also be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the generating source RF signal and the bias RF signal may also be pulsed.

[0039] In addition, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated 1 bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0040] In various embodiments, at least one of the first and second DC signals may also be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses according to a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may also include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first and second DC generators 32a, 32b may also be provided on the basis of the RF power supply 31, and the first DC generator 32a may also be provided instead of the second RF generator 31b.

[0041] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can also include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump can also include a turbomolecular pump, a dry pump, or a combination thereof.

[0042] The control unit 2 processes computer executable commands that cause the plasma processing device 1 to perform various processes described in the present disclosure. The control unit 2 can be configured to control the various elements of the plasma processing device 1 in a manner that performs the various processes described herein. In one embodiment, a part or all of the control unit 2 may also be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program may be pre-stored in the storage unit 2a2, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2, and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0043] Next, use Figure 2 The structure of the shower head 13 will be further described. Figure 2 This is an example of a schematic cross-sectional view of the shower head 13 .

[0044] like Figure 2 As shown, the shower head 13 includes an electrode plate 131, an electrode support 132, a conductive connection member 133, and a sealing member (not shown). The shower head 13 is an example of an electrode assembly (upper electrode assembly) including the electrode plate 131 as an upper electrode.

[0045] The electrode plate 131 has a main body and a flange. The main body is a disc-shaped portion, and a plurality of gas flow holes 13d are formed therein. The flange is a ring-shaped portion extending radially from the circumferential surface of the main body. In addition, the thickness of the flange is thinner than that of the main body, and the upper surface of the flange and the upper surface of the main body are formed by the same plane (the second surface S2 described later), and the lower surface of the main body (the first surface S1 described later) is formed at a position lower than the lower surface of the flange.

[0046] In addition, the electrode plate 131 (main body) has a first surface S1, a second surface S2, and a plurality of inner side surfaces (inner side surfaces that define the gas flow holes 13d). The first surface S1 is the lower surface of the electrode plate 131. In addition, the first surface S1 is a surface that is exposed to the plasma processing space 10s when the electrode plate 131 is supported by the electrode support 132, and is a surface that is exposed to the plasma during plasma processing. In addition, the first surface S1 is a surface that is opposite to the lower electrode (substrate support portion 11) when the electrode plate 131 is supported by the electrode support 132. The second surface S2 is the upper surface of the electrode plate 131, and is a surface on the opposite side to the first surface S1. In addition, the second surface S2 is a surface that is opposite to the lower surface of the electrode support 132 when the electrode plate 131 is supported by the electrode support 132. In addition, the second surface S2 is a surface that is in contact with the lower surface of the electrode support 132 when the electrode plate 131 is supported by the electrode support 132, and is a surface that is in contact with the conductive connection component 133.

[0047] The electrode plate 131 is formed with a plurality of gas flow holes 13d penetrating the main body of the electrode plate 131 from the first surface S1 to the second surface S2. In addition, the plurality of inner side surfaces define the plurality of gas flow holes 13d penetrating the main body of the electrode plate 131 from the first surface S1 to the second surface S2.

[0048] A gas diffusion chamber 13b is formed inside the electrode support 132. The lower surface of the electrode support 132 is a surface facing the electrode plate 131. A plurality of gas flow holes 13c are formed on the lower surface of the electrode support 132. One end of the gas flow hole 13c is connected to the gas diffusion chamber 13b, and the other end is open on the lower surface of the electrode support 132. A gas supply port 13a is provided on the upper surface side of the electrode support 132, and a gas flow path is formed that is connected from the gas supply port 13a to the gas diffusion chamber 13b.

[0049] like Figure 2As shown, the lower surface of the electrode support 132 is in contact with the upper surface of the electrode plate 131, and the electrode plate 131 is supported by the electrode support 132. As a result, the gas flow holes 13c of the electrode support 132 are connected to the gas flow holes 13d of the electrode plate 131. That is, the processing gas supplied to the gas supply port 13a is introduced into the gas diffusion chamber 13b and diffused in the gas diffusion chamber 13b. Then, the processing gas is introduced from the gas diffusion chamber 13b through the plurality of gas flow holes 13c and the plurality of gas flow holes 13d into the plasma processing space 10s (see Figure 1 ).

[0050] In addition, the lower surface of the electrode support 132 is in contact with the upper surface (second surface S2) of the electrode plate 131, and the electrode plate 131 is supported by the electrode support 132, so that the electrode plate 131 is in thermal contact with the electrode support 132. In addition, a heat medium flow path (not shown) through which a heat medium flows is formed in the electrode support 132. Thus, the heat input from the plasma generated in the plasma processing space 10s to the electrode plate 131 is transferred to the electrode support 132, and the heat is dissipated by the heat medium flowing in the heat medium flow path (not shown) of the electrode support 132.

[0051] In addition, a groove portion 1321, for example, in a circular shape, is formed on the lower surface of the electrode support 132. A conductive connection member 133 is arranged in the groove portion 1321. In addition, the electrode support 132 may also have an anodic oxide film (in one example, an acid-resistant aluminum film) on the surface. On the other hand, the inner wall surface (side wall surface and top surface) of the groove portion 1321 is not formed with an anodic oxide film but is composed of a conductive material.

[0052] The conductive connecting member 133 is made of a conductive material having flexibility. Here, as the conductive material of the conductive connecting member 133, for example, any one of aluminum, stainless steel, Hastelloy (registered trademark), etc. can be used. The conductive connecting member 133, for example, has a spiral tube structure in which a strip of metal is wound into a spiral shape. In the conductive connecting member 133 of the spiral tube structure, the diameter of the conductive connecting member 133 is formed to be slightly larger than the depth of the groove portion 1321. Thus, when the lower surface of the electrode support 132 contacts the upper surface of the electrode plate 131 and the electrode plate 131 is supported on the electrode support 132, the conductive connecting member 133 is sandwiched between the top surface of the groove portion 1321 and the upper surface (second surface S2) of the electrode plate 131, and deforms in the groove portion 1321. Thus, the conductive connecting member 133 can electrically contact the side wall surface of the groove portion 1321 formed on the lower surface of the electrode support 132 and / or the top surface of the groove portion 1321. The conductive connection member 133 is in electrical contact with the upper surface (second surface S2 ) of the electrode plate 131 . Thus, the conductive connection member 133 electrically connects the electrode plate 131 and the electrode support 132 .

[0053] In addition, the conductive connection member 133 is not limited to the spiral tube structure, and may have a leaf spring structure, for example.

[0054] In addition, a sealing member (not shown) may be arranged on the inner and outer sides of the groove portion 1321. The sealing member (not shown) is flexible and is formed of a fluorine-based or silicone-based rubber. When the lower surface of the electrode support 132 contacts the upper surface of the electrode plate 131 and the electrode plate 131 is supported on the electrode support 132, the sealing member (not shown) seals the electrode plate 131 and the electrode support 132 on the inner and outer sides of the conductive connection member 133. Thus, the sealing member (not shown) prevents the processing gas from reaching the area on the upper surface of the electrode plate 131 that contacts the conductive connection member 133, the side wall surface and the top surface of the groove portion 1321 of the electrode support 132, and the conductive connection member 133. Thus, it is possible to prevent the surface from reacting with the processing gas to increase the contact resistance.

[0055] The electrode plate 131 is formed by stacking a plurality of layers in the vertical direction (the thickness direction of the electrode plate 131, the direction from the first surface S1 toward the second surface S2). Figure 2 In the example shown, the electrode plate 131 has a first layer 1311 and a second layer 1312 .

[0056] The first layer 1311 is a layer disposed on the plasma processing space 10s side when the electrode plate 131 is supported by the electrode support 132. The first layer 1311 is formed of a material having a first resistance value R1. In addition, the first layer 1311 has a first surface S1. The first surface S1 is the lower surface of the first layer 1311. That is, the first surface S1 of the electrode plate 131 is composed of a material having a first resistance value R1.

[0057] The second layer 1312 is a layer disposed on the electrode support 132 side when the electrode plate 131 is supported by the electrode support 132. The second layer 1312 is formed of a material having a second resistance value R2 different from the first resistance value R1. In addition, the second layer 1312 has a second surface S2. The second surface S2 is the upper surface of the second layer 1312. That is, the second surface S2 of the electrode plate 131 is composed of a material having a second resistance value R2.

[0058] In addition, a bonding surface S3 is provided between the first layer 1311 and the second layer 1312. The bonding surface S3 is a bonding surface that bonds the upper surface of the first layer 1311 and the lower surface of the second layer 1312. That is, a bonding layer is formed between the first layer 1311 and the second layer 1312.

[0059] In addition, Figure 2In the example shown, the second layer 1312 is formed to be larger in diameter than the first layer 1311, and the electrode plate 131 has: a main body portion which is the portion where the first layer 1311 and the second layer 1312 are stacked; and a flange portion which is the annular portion of the second layer 1312 which is larger in diameter than the first layer 1311.

[0060] In addition, Figure 2 In the above description, the electrode plate 131 is described as having a two-layer structure in which the first layer 1311 and the second layer 1312 are bonded together, but the present invention is not limited to this. Figure 3 FIG. 1 is another example of a schematic cross-sectional view of the shower head 13 .

[0061] The electrode plate 131 is formed by stacking a plurality of layers in the vertical direction (the thickness direction of the electrode plate 131, the direction from the first surface S1 toward the second surface S2). Figure 3 In the example shown, the electrode plate 131 has a first layer 1311 , an intermediate layer 1313 , and a second layer 1312 .

[0062] The first layer 1311 is a layer disposed on the plasma processing space 10s side when the electrode plate 131 is supported by the electrode support 132. The first layer 1311 is formed of a material having a first resistance value R1. In addition, the first layer 1311 has a first surface S1. The first surface S1 is the lower surface of the first layer 1311. That is, the first surface S1 of the electrode plate 131 is composed of a material having a first resistance value R1.

[0063] The second layer 1312 is a layer disposed on the electrode support 132 side when the electrode plate 131 is supported by the electrode support 132. The second layer 1312 is formed of a material having a second resistance value R2 different from the first resistance value R1. In addition, the second layer 1312 has a second surface S2. The second surface S2 is the upper surface of the second layer 1312. That is, the second surface S2 of the electrode plate 131 is composed of a material having a second resistance value R2.

[0064] The intermediate layer 1313 is disposed between the first layer 1311 and the second layer 1312. The intermediate layer 1313 is formed of a material having a third resistance value R3 between the first resistance value R1 and the second resistance value R2.

[0065] In addition, there is a bonding surface S3 between the first layer 1311 and the second layer 1312. The bonding surface S3 includes a bonding surface S3a and a bonding surface S3b. The bonding surface S3a is a bonding surface that bonds the upper surface of the first layer 1311 and the lower surface of the intermediate layer 1313. The bonding surface S3b is a bonding surface that bonds the upper surface of the intermediate layer 1313 and the lower surface of the second layer 1312. That is, a first bonding layer is formed between the first layer 1311 and the intermediate layer 1313. A second bonding layer is formed between the intermediate layer 1313 and the second layer 1312.

[0066] Among them, Figure 3 In the example shown, the second layer 1312 is formed to be larger in diameter than the first layer 1311 and the intermediate layer 1313, and the electrode plate 131 comprises: a main body portion, which is a portion where the first layer 1311, the intermediate layer 1313 and the second layer 1312 are stacked; and a flange portion, which is an annular portion of the second layer 1312 that is larger in diameter than the first layer 1311 and the intermediate layer 1313.

[0067] Next, use Figures 4 to 7 The bonding method of the electrode plate 131 is further described. Figure 3 The electrode plate 131 having the three-layer structure (first layer 1311, middle layer 1313, second layer 1312) is described as an example.

[0068] Figure 4 FIG. 1 is an example of a diagram for explaining a method of joining an electrode plate 131 having a gas flow hole having a through-hole structure. Figure 4 In the example shown, the electrode plate 131 shows a main body portion of a portion where a first layer 1311, an intermediate layer 1313, and a second layer 1312 are stacked, and the flange portion is omitted. Figure 4 In the example shown, the first layer 1311, the intermediate layer 1313, and the second layer 1312 are stacked in order from the bottom, and the bonding surfaces S3a and S3b are solid-phase bonded to form a bonding layer. As solid-phase bonding, for example, any one of diffusion bonding and brazing bonding can be used. Among them, when brazing bonding, any one of Al, Ge, SiO2, Sn, etc. can be used as a brazing material.

[0069] Figure 5 FIG. 1 is an example of a diagram for explaining another method of joining an electrode plate 131 having a gas flow hole having a through hole structure. Figure 5 In the example shown, the electrode plate 131 shows a main body portion of a portion where a first layer 1311, an intermediate layer 1313, and a second layer 1312 are stacked, and the flange portion is omitted. Figure 5 In the example shown, the member forming the first layer 1311 has a recessed portion on the upper surface side. The intermediate layer 1313 and the second layer 1312 are sequentially accommodated in the recessed portion. Furthermore, the inner peripheral surface of the recessed portion and the outer peripheral surfaces of the intermediate layer 1313 and the second layer 1312 opposite to the inner peripheral surface of the recessed portion are welded together to form a welded portion (joining layer) 1314. For welding, any one of laser welding, electron beam welding, etc. can be used.

[0070] In addition, Figure 4 and Figure 5In the example, after forming through holes on the first layer 1311, the intermediate layer 1313, and the second layer 1312, respectively, the first layer 1311, the intermediate layer 1313, and the second layer 1312 are bonded together to form the electrode plate 131 having the gas flow holes 13d of the through hole structure. In addition, after bonding the first layer 1311, the intermediate layer 1313, and the second layer 1312 together, a through hole is formed in the bonded body to form the electrode plate 131 having the gas flow holes 13d of the through hole structure.

[0071] Figure 6 FIG. 1 is an example of a diagram for explaining a method of bonding an electrode plate 131 having a gas flow hole 13d having a branched structure. Figure 6 In the example shown, the electrode plate 131 shows a main body portion where the first layer 1311, the intermediate layer 1313, and the second layer 1312 are stacked, and the flange portion is omitted. Figure 6 In the example shown, the first layer 1311, the intermediate layer 1313, and the second layer 1312 are stacked in order from the bottom, and the bonding surfaces S3a and S3b are solid-phase bonded to form a bonding layer. As solid-phase bonding, for example, any one of diffusion bonding and brazing bonding can be used. Among them, when brazing bonding, any one of Al, Ge, SiO2, Sn, etc. can be used as a brazing material.

[0072] Figure 7 FIG. 1 is an example of a diagram for explaining another method of joining an electrode plate 131 having a branched gas flow hole 13d. Figure 7 In the example shown, the electrode plate 131 shows a main body portion of a portion where a first layer 1311, an intermediate layer 1313, and a second layer 1312 are stacked, and the flange portion is omitted. Figure 7 In the example shown, the member forming the first layer 1311 has a recessed portion on the upper surface side. The intermediate layer 1313 and the second layer 1312 are sequentially accommodated in the recessed portion. Furthermore, the inner peripheral surface of the recessed portion and the outer peripheral surfaces of the intermediate layer 1313 and the second layer 1312 opposite to the inner peripheral surface of the recessed portion are welded together to form a welded portion (joining layer) 1314. For welding, any one of laser welding, electron beam welding, etc. can be used.

[0073] Here, in Figure 6 The first layer 1311 shown is formed with a through hole 13d5 penetrating from the upper surface to the lower surface. Figure 7 The first layer 1311 shown is formed with a through hole 13d5 that passes through from the bottom surface of the recess to the lower surface. Figure 6 and Figure 7 The intermediate layer 1313 shown is formed with: a groove 13d4 formed on the lower surface and a through hole 13d3 penetrating from the upper surface to the groove 13d4. Figure 6 and Figure 7 The second layer 1312 shown is formed with: a groove 13d2 formed on the lower surface and a through hole 13d1 penetrating from the upper surface to the groove 13d2.

[0074] Thus, the gas flow hole 13d connected to the through hole 13d1, the groove 13d2, the through hole 13d3, the groove 13d4, and the through hole 13d5 is formed. In addition, the number of through holes 13d5 is greater than the number of through holes 13d3, and the number of through holes 13d3 is greater than the number of through holes 13d1. In other words, the gas flow hole 13d is formed so that the number of openings formed on the first surface S1 (the number of through holes 13d5) is greater than the number of openings formed on the second surface S2 (the number of through holes 13d1).

[0075] In addition, the flow path of the gas flow hole 13d has through holes 13d1, 13d3, and 13d5 extending in the up-down direction (voltage application direction) and grooves 13d2 and 13d4 extending in the horizontal direction (direction orthogonal to the voltage application direction). In addition, the through hole 13d1 and the through hole 13d3 are not coaxially arranged, but a flow path (groove 13d2) extending in a direction orthogonal to the voltage application direction is provided between the through hole 13d1 and the through hole 13d3. In addition, the through hole 13d3 and the through hole 13d5 are not coaxially arranged, but a flow path (groove 13d4) extending in a direction orthogonal to the voltage application direction is provided between the through hole 13d3 and the through hole 13d5.

[0076] Here, if the voltage applied to the upper electrode increases, the electric field near the through hole 13d5 of the gas flow hole 13d becomes stronger, the dissociation of the processing gas molecules progresses, and the density of electrons and ions increases. In addition, the movement speed of electrons and ions also becomes faster. Therefore, compared with the case where the applied voltage is low, the processing gas discharged from the through hole 13d5 to the plasma processing space 10s is highly dissociated, and abnormal discharge may occur near the through hole 13d5.

[0077] In this regard, Figure 6 and Figure 7 In the electrode plate 131 shown, the gas flow hole 13d is formed into a branch structure. Thus, the distance in the voltage application direction of the electrons and ions introduced from the plasma processing space 10s into the through hole 13d5 can be shortened. Thus, the mean free path of the electrons and ions can be shortened, and the occurrence of abnormal discharge can be suppressed.

[0078] Furthermore, by increasing the number of through holes 13d5 on the downstream side of the through holes 13d1 on the upstream side, it is possible to reduce the gas pressure in the through holes 13d5 on the lower surface side of the electrode plate 131. This can further suppress the occurrence of abnormal discharge.

[0079] In addition, Figure 6 and Figure 7 The structure of FIG. 1 illustrates a three-layer structure, but it can also be a two-layer structure.

[0080] In addition, Figure 5 and Figure 7 In the structure, although it is described as a three-layer structure, the second layer 1312 may be accommodated in a recess formed on the upper surface side of the first layer 1311 to form a two-layer structure.

[0081] In addition, Figures 2 to 7 In the embodiment, the electrode plate 131 is a two-layer structure in which a first layer 1311 and a second layer 1312 are bonded together (see Figure 2 ), a three-layer structure in which the first layer 1311, the middle layer 1313 and the second layer 1312 are joined together (refer to Figure 3 The electrode plate 131 may also have a plurality of intermediate layers of two or more layers, and may be a multilayer structure of four or more layers in which the first layer 1311, the plurality of intermediate layers, and the second layer 1312 are bonded together.

[0082] In this structure, the resistance value of each of the plurality of intermediate layers is configured to change in one direction from the first layer 1311 to the second layer 1312. That is, when the second resistance value R2 of the second layer 1312 is lower than the first resistance value R1 of the first layer 1311, the resistance value of each of the plurality of intermediate layers is configured to decrease in a step-like manner from the first layer 1311 to the second layer 1312. In addition, when the second resistance value R2 of the second layer 1312 is higher than the first resistance value R1 of the first layer 1311, the resistance value of each of the plurality of intermediate layers is configured to increase in a step-like manner from the first layer 1311 to the second layer 1312.

[0083] In addition, the electrode plate 131 is described as being composed of a plurality of layers stacked in the vertical direction, but is not limited thereto. The electrode plate 131 may also be configured to include a first surface S1 having a first resistance value R1 and a second surface S2 having a second resistance value R2, and the resistance value changes in a step-like or continuous manner from the first surface S1 to the second surface S2. The electrode plate 131 may also be formed by stacking molding such as a 3D printer while changing the composition ratio of such materials.

[0084] In this structure, the resistance value of the electrode plate 131 is configured to change in one direction from the first surface S1 to the second surface S2. That is, when the second resistance value R2 of the second surface S2 is lower than the first resistance value R1 of the first surface S1, the electrode plate 131 is configured to decrease in a step-like or continuous manner from the first surface S1 to the second surface S2. In addition, when the second resistance value R2 of the second surface S2 is higher than the first resistance value R1 of the first surface S1, the electrode plate 131 is configured to increase in a step-like or continuous manner from the first surface S1 to the second surface S2.

[0085] <Electrode Plate 131 of First Embodiment>

[0086] Next, the electrode plate 131 of the first embodiment is described. The electrode plate 131 has a structure in which the first resistance value R1 is higher than the second resistance value R2. Here, each layer (first layer 1311, second layer 1312, intermediate layer 1313) of the electrode plate 131 is formed of Si or SiC, and the resistance value is controlled by adjusting the doping amount of boron (B).

[0087] For example, the first resistance value R1 of the first layer 1311 is greater than 1Ωcm in terms of resistivity, and the second resistance value R2 of the second layer 1312 is less than 1Ωcm in terms of resistivity. In addition, the first resistance value R1 of the first layer 1311 is preferably greater than 60Ωcm and less than 80Ωcm in terms of resistivity, and the second resistance value R2 of the second layer 1312 is preferably greater than 0.005Ωcm and less than 0.015Ωcm in terms of resistivity. In addition, the resistivity value of the intermediate layer 1313 is preferably greater than 1Ωcm and less than 4Ωcm. For example, the resistivity value of the first resistance value R1 of the first layer 1311 is 80Ωcm, while the resistivity value of the second resistance value R2 of the second layer 1312 is 0.015Ωcm.

[0088] In addition, if Figure 2 and Figure 3 As shown, when the electrode plate 131 is supported by the electrode support 132, the lower surface (first surface S1) of the electrode plate 131 is exposed to the plasma. Therefore, a potential difference is generated between the lower surface of the electrode plate 131 and the plasma generated in the plasma processing space 10s.

[0089] Here, by forming the first surface S1 (first layer 1311) with a high resistance material, the potential difference between the lower surface (first surface S1) of the electrode plate 131 and the plasma can be reduced. In other words, the sheath can be made thinner. As a result, the electric field strength at the front end of the gas flow hole 13d formed on the lower surface of the electrode plate 131 can be reduced, and abnormal discharge at the front end of the gas flow hole 13d can be suppressed. That is, abnormal discharge can be suppressed from occurring on the side of the lower surface (first surface S1) of the electrode plate 131. In addition, damage to the electrode plate 131 such as arc discharge marks when abnormal discharge occurs can be reduced.

[0090] Preferably, the thickness of the electrode plate 131 is, for example, 20 mm, and the thickness of the first layer 1311 is, for example, 5 mm to 7 mm. By ensuring that the thickness of the first layer 1311 is 5 mm or more, abnormal discharge at the tip of the gas flow hole 13d can be suppressed.

[0091] In addition, if Figure 2 and Figure 3 As shown, when the electrode plate 131 is supported by the electrode support 132, an electrical contact surface is formed in which the lower surface of the electrode support 132 contacts and conducts with the upper surface (second surface S2) of the electrode plate 131. Therefore, a potential difference is generated between the lower surface of the electrode support 132 and the upper surface of the electrode plate 131.

[0092] Here, by forming the second surface S2 (second layer 1312) from a low-resistance material, the potential difference between the upper surface (second surface S2) of the electrode plate 131 and the lower surface of the electrode support 132 can be reduced. As a result, the gas flowing through the gas flow holes 13c and the gas flow holes 13d can be suppressed from abnormally discharging due to the potential difference between the upper surface (second surface S2) of the electrode plate 131 and the lower surface of the electrode support 132. That is, it is possible to suppress abnormal discharge from occurring on the upper surface (second surface S2) side of the electrode plate 131. In addition, it is possible to reduce damage to the electrode plate 131 when abnormal discharge occurs.

[0093] Incidentally, when the electrode plate 131 is formed integrally with a high resistance material, abnormal discharge may occur at the communicating portion between the gas flow hole 13c and the gas flow hole 13d due to the potential difference between the lower surface of the electrode plate 131 and the lower surface of the electrode support 132. As a result, the electrode plate 131 may be consumed or damaged on the upper surface side thereof due to abnormal discharge.

[0094] On the other hand, when the electrode plate 131 is integrally formed of a low-resistance material, the potential difference between the lower surface of the electrode plate 131 and the plasma becomes larger, and the sheath becomes thicker. As a result, abnormal discharge may occur at the front end portion of the gas flow hole 13d formed on the lower surface of the electrode plate 131. As a result, the electrode plate 131 may be consumed or damaged on the lower surface side of the electrode plate 131 due to abnormal discharge.

[0095] In this regard, according to Figures 2 to 7 The electrode plate 131 shown in the above can suppress abnormal discharge generated on the lower surface (first surface S1) side of the electrode plate 131 and the upper surface (second surface S2) side of the electrode plate 131. In addition, damage to the electrode plate 131 when abnormal discharge occurs can be reduced.

[0096] In addition, Figure 5 or Figure 7 In the structure of the electrode plate 131 shown, the conductive connection member 133 is preferably in contact with the upper surface of the second layer 1312. This can reduce the potential difference between the upper surface (second surface S2) of the electrode plate 131 and the lower surface of the electrode support 132.

[0097] <Electrode Plate 131 of Second Embodiment>

[0098] Next, the electrode plate 131 of the second embodiment is described. The electrode plate 131 has a structure in which the first resistance value R1 is lower than the second resistance value R2. Here, each layer (first layer 1311, second layer 1312, intermediate layer 1313) of the electrode plate 131 is formed of Si or SiC, and the resistance value is controlled by adjusting the doping amount of boron (B).

[0099] Fig. 8A and Figure 8B Schematic diagram showing the state of the vicinity of the first surface S1 of the electrode plate 131 of the reference example.

[0100] Fig. 8A The state of the electrode plate 131 of the reference example when it is new is shown. The electrode plate 131 is formed by doping Si or SiC with boron (B) to form a P-type semiconductor.

[0101] Figure 8B The state of the electrode plate 131 of the reference example after plasma treatment is shown. The first surface S1 side of the electrode plate 131 is doped with hydrogen (H) by being exposed to plasma from the direction indicated by the hollow arrow, and the surface of the electrode plate 131 changes from a P-type semiconductor to an N-type semiconductor. On the other hand, the inside of the electrode plate 131 maintains a P-type semiconductor. As a result, a PN junction (diode 810) is formed on the electrode plate 131. Figure 8B The dotted line in illustratively represents the potential. As a result, it is difficult for a direct current 821 (DC-I current) to flow in the PN junction (diode 810).

[0102] Fig. 9A and Fig. 9B 1 is a schematic diagram showing a state near the first surface S1 of the electrode plate 131 according to the second embodiment.

[0103] Fig. 9A The state of the electrode plate 131 of the second embodiment when it is new is shown. The electrode plate 131 is formed by doping boron (B) in Si or SiC to form a P-type semiconductor. Here, the electrode plate 131 of the second embodiment has a structure in which the first resistance value R1 is lower than the second resistance value R2. That is, the first surface S1 side has a structure in which the first resistance value R1 is lower than the second resistance value R2 by increasing the doping amount of boron (B) compared to the second surface S2 side.

[0104] Fig. 9B 1 shows the state of the electrode plate 131 of the second embodiment after the plasma treatment. The first surface S1 side of the electrode plate 131 is doped with hydrogen (H) by being exposed to the plasma from the direction indicated by the hollow arrow. However, Fig. 9A The electrode plate 131 of the second embodiment shown in FIG. Fig. 8A Since the number of carriers is greater than that of the electrode plate 131 of the reference example shown, the surface of the electrode plate 131 maintains a P-type semiconductor. This can suppress a decrease in the generated direct current 822 (DC-I current).

[0105] In the electrode plate 131 of the second embodiment, the second resistance value R2 is increased to increase the depth of the skin current flowing on the upper surface (second surface S2) of the electrode plate 131. This can suppress electric field concentration at the upper end of the gas flow hole 13d and suppress abnormal discharge.

[0106] The embodiments disclosed above include the following aspects, for example.

[0107] (Note 1)

[0108] An electrode plate for a parallel flat plate type plasma processing device, wherein:

[0109] The invention comprises a main body having a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces, wherein the plurality of inner side surfaces define a plurality of gas flow holes penetrating the main body from the first surface to the second surface,

[0110] The first surface is made of a material having a first resistance value,

[0111] The second surface is made of a material having a second resistance value different from the first resistance value.

[0112] (Note 2)

[0113] The electrode plate according to Supplementary Note 1, wherein:

[0114] The main body has:

[0115] A first layer, which includes the first side, is composed of a material having the first resistance value; and

[0116] The second layer, which includes the second surface, is made of a material having the second resistance value.

[0117] (Note 3)

[0118] The electrode plate according to Supplementary Note 2, wherein:

[0119] The main body further includes a bonding layer bonding the first layer and the second layer together.

[0120] (Note 4)

[0121] The electrode plate according to Supplementary Note 2, wherein:

[0122] The main body further has at least one intermediate layer between the first layer and the second layer.

[0123] (Note 5)

[0124] The electrode plate according to Supplementary Note 4, wherein:

[0125] The intermediate layer is made of a material having a third resistance value between the first resistance value and the second resistance value.

[0126] (Note 6)

[0127] The electrode plate according to Supplement 4 or 5, wherein:

[0128] The main body also has:

[0129] A first bonding layer bonding the first layer and the intermediate layer together; and

[0130] A second bonding layer bonds the intermediate layer and the second layer together.

[0131] (Note 7)

[0132] The electrode plate according to Supplementary Note 1, wherein:

[0133] The main body has:

[0134] a first layer including the first surface, having a recessed portion on a surface opposite to the first surface, and having the first resistance value; and

[0135] The second layer includes the second surface, is received in the recess, and has the second resistance value.

[0136] (Note 8)

[0137] The electrode plate according to Supplementary Note 7, wherein:

[0138] The main body further includes a bonding layer bonding the inner peripheral surface of the recessed portion of the first layer and the outer peripheral surface of the second layer.

[0139] (Note 9)

[0140] The electrode plate according to Supplement 7 or 8, wherein:

[0141] The main body further includes an intermediate layer between the first layer and the second layer.

[0142] (Note 10)

[0143] The electrode plate according to Supplementary Note 9, wherein:

[0144] The intermediate layer is made of a material having a third resistance value between the first resistance value and the second resistance value.

[0145] (Note 11)

[0146] The electrode plate according to Supplement 9 or Supplement 10, wherein:

[0147] The main body further includes a bonding layer that bonds the inner peripheral surface of the recessed portion of the first layer to the outer peripheral surface of the second layer and the outer peripheral surface of the intermediate layer.

[0148] (Note 12)

[0149] The electrode plate according to Supplementary Note 1, wherein:

[0150] The resistance value of the main body portion changes continuously or in steps from the first surface to the second surface.

[0151] (Note 13)

[0152] The electrode plate according to any one of Supplementary Notes 1 to 12, wherein

[0153] The first resistance value is higher than the second resistance value.

[0154] (Note 14)

[0155] The electrode plate according to any one of Supplementary Notes 1 to 12, wherein

[0156] The first resistance value is lower than the second resistance value.

[0157] (Note 15)

[0158] The electrode plate according to Supplementary Note 13, wherein:

[0159] The first surface is composed of a material doped with B in Si or SiC,

[0160] The second surface is made of a material obtained by doping Si or SiC with B at a doping amount different from that of the first surface.

[0161] (Note 16)

[0162] The electrode plate according to Supplementary Note 14, wherein:

[0163] The first surface is composed of a material doped with B in Si or SiC,

[0164] The second surface is made of a material obtained by doping Si or SiC with B at a doping amount different from that of the first surface.

[0165] (Note 17)

[0166] An electrode assembly comprising:

[0167] The electrode plate according to any one of Supplementary Notes 1 to 12; and

[0168] The electrode support supports the electrode plate in a detachable manner.

[0169] (Note 18)

[0170] The electrode assembly according to Supplementary Note 17, wherein:

[0171] The device also includes a conductive connecting component, which is disposed between the electrode plate and the electrode support and is used to connect the electrode plate and the electrode support.

[0172] (Note 19)

[0173] The electrode assembly according to Supplementary Note 18, wherein:

[0174] The conductive connection component is in contact with the second surface.

[0175] (Note 20)

[0176] A plasma processing device, comprising:

[0177] An electrode assembly as described in any one of Notes 17 to 19;

[0178] a plasma processing chamber;

[0179] a substrate support disposed within the plasma processing chamber; and

[0180] Plasma generating unit.

[0181] In addition, the present invention is not limited to the configurations listed in the above embodiments and the combinations of other elements, etc. These aspects can be changed within the scope not departing from the gist of the present invention and can be appropriately determined according to the application mode.

[0182] In addition, the present application claims priority based on Japanese Patent Application No. 2022-144112 filed on September 9, 2022, the entire contents of which are incorporated herein by reference.

[0183] Description of Reference Numerals

[0184] W substrate

[0185] 1Plasma treatment device

[0186] 10Plasma processing chamber

[0187] 10s plasma treatment space

[0188] 11 substrate support part

[0189] 13. Sprinkler head (electrode assembly)

[0190] 13a Gas supply port

[0191] 13b Gas diffusion chamber

[0192] 13c Gas flow hole

[0193] 13d Gas flow hole

[0194] 13d1, 13d3, 13d5 through holes

[0195] 13d2, 13d4 grooves

[0196] 131 electrode plate

[0197] 1311 First Floor

[0198] 1312 Second Floor

[0199] 1313 Middle Layer

[0200] 1314 Welding Department

[0201] 132 Electrode support

[0202] 133 conductive connecting parts

[0203] 20 Gas supply unit

[0204] 30 Power Supply

[0205] 40 Exhaust System

[0206] S1 first page

[0207] S2 second side

[0208] S3, S3a, S3b joint surfaces.

Claims

1. An electrode plate for a parallel flat plate type plasma processing device, characterized in that: The invention comprises a main body having a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces, wherein the plurality of inner side surfaces define a plurality of gas flow holes penetrating the main body from the first surface to the second surface, The first surface is made of a material having a first resistance value, The second surface is made of a material having a second resistance value different from the first resistance value.

2. The electrode plate according to claim 1, characterized in that: The main body has: A first layer, which includes the first side, is composed of a material having the first resistance value; and The second layer, which includes the second surface, is made of a material having the second resistance value.

3. The electrode plate according to claim 2, characterized in that: The main body further includes a bonding layer bonding the first layer and the second layer together.

4. The electrode plate according to claim 2, characterized in that: The main body further has at least one intermediate layer between the first layer and the second layer.

5. The electrode plate according to claim 4, characterized in that: The intermediate layer is made of a material having a third resistance value between the first resistance value and the second resistance value.

6. The electrode plate according to claim 5, characterized in that: The main body also has: A first bonding layer bonding the first layer and the intermediate layer together; and A second bonding layer bonds the intermediate layer and the second layer together.

7. The electrode plate according to claim 1, characterized in that: The main body has: a first layer including the first surface, having a recessed portion on a surface opposite to the first surface, and having the first resistance value; and The second layer includes the second surface, is received in the recess, and has the second resistance value.

8. The electrode plate according to claim 7, characterized in that: The main body further includes a bonding layer bonding the inner peripheral surface of the recessed portion of the first layer and the outer peripheral surface of the second layer.

9. The electrode plate according to claim 7, characterized in that: The main body further includes an intermediate layer between the first layer and the second layer.

10. The electrode plate according to claim 9, characterized in that: The intermediate layer is made of a material having a third resistance value between the first resistance value and the second resistance value.

11. The electrode plate according to claim 10, characterized in that: The main body further includes a bonding layer that bonds the inner peripheral surface of the recessed portion of the first layer to the outer peripheral surface of the second layer and the outer peripheral surface of the intermediate layer.

12. The electrode plate according to claim 1, characterized in that: The resistance value of the main body portion changes continuously or in steps from the first surface to the second surface.

13. The electrode plate according to any one of claims 1 to 12, characterized in that: The first resistance value is higher than the second resistance value.

14. The electrode plate according to any one of claims 1 to 12, characterized in that: The first resistance value is lower than the second resistance value.

15. The electrode plate according to claim 13, characterized in that: The first surface is composed of a material doped with B in Si or SiC, The second surface is made of a material obtained by doping Si or SiC with B at a doping amount different from that of the first surface.

16. The electrode plate according to claim 14, characterized in that: The first surface is composed of a material doped with B in Si or SiC, The second surface is made of a material obtained by doping Si or SiC with B at a doping amount different from that of the first surface.

17. An electrode assembly, characterized in that: include: The electrode plate according to any one of claims 1 to 12; and The electrode support supports the electrode plate in a detachable manner.

18. The electrode assembly according to claim 17, characterized in that: The device also includes a conductive connecting component, which is disposed between the electrode plate and the electrode support and is used to connect the electrode plate and the electrode support.

19. The electrode assembly according to claim 18, characterized in that: The conductive connection component is in contact with the second surface.

20. A plasma processing device, characterized in that: include: The electrode assembly according to claim 17; a plasma processing chamber; a substrate support disposed in the plasma processing chamber; and Plasma generating unit.

Images