Silicon carbide crystal growth furnace and crystal growth method

Abstract

The invention provides a silicon carbide crystal growth furnace and a crystal growth method, and relates to the field of silicon carbide single crystals. The silicon carbide crystal growing furnace comprises a vacuum heating cavity, a resistance heater used for providing a heating heat source is arranged in the vacuum heating cavity, an air exhaust pipeline is arranged on the vacuum heating cavity, the silicon carbide crystal growing furnace further comprises a crucible assembly, a stress relieving assembly, an integrated moving mechanism, a temperature measuring assembly and a control monitoring module, and the crucible assembly comprises a crucible lifting rod. The lower end of the crucible lifting rod is fixedly connected with a crucible cover, the lower portion of the crucible cover is detachably connected with a crucible, silicon carbide powder is arranged in the crucible, and silicon carbide seed crystals are arranged on the side face, facing the silicon carbide powder, of the crucible cover. Through the integrated moving mechanism, the temperature measuring assembly, the stress relieving assembly and the control monitoring module, ideal thermal field distribution is obtained, so that crystals uniformly grow in a steady-state thermal field, and high-quality crystals with low defect density and low stress are obtained.

Description

Technical Field

[0001] The invention relates to the technical field of silicon carbide single crystals, and in particular to a silicon carbide crystal growth furnace and a crystal growth method. Background Art

[0002] As an important branch of semiconductor materials science, the field of silicon carbide (SiC) single crystal growth technology has received extensive attention and rapid development in recent years. Silicon carbide single crystals have become an ideal material for the preparation of high-performance electronic devices due to their unique physical and chemical properties, such as high-temperature stability, high hardness, excellent radiation resistance and thermal conductivity. In particular, silicon carbide single crystals have shown great application potential in the fields of high-power electronic devices, radio frequency power amplifiers, blue light-emitting diodes and high-temperature sensors.

[0003] The growth technology of silicon carbide single crystals has undergone long-term development and innovation. At present, the industry has developed a variety of mainstream growth methods, including physical vapor transport (PVT), high-temperature chemical vapor deposition (HTCVD) and liquid phase method (LPE, HTSG). Among them, the PVT method has become the most widely used SiC single crystal growth method due to its mature technology, relatively low equipment cost and complete industrial chain supporting. This method achieves controllable growth of SiC single crystals by sublimating SiC powder at high temperature and condensing and growing on the surface of the seed crystal. Although the PVT method has achieved remarkable results in commercial applications, due to its high process temperature, it is impossible to accurately detect the axial and radial temperature and gradient of the thermal field in the furnace. Theoretical calculations and deductions are often performed through simulations, but due to the uneven distribution of the thermal field during the actual growth process, the theoretical results and actual deviations are large. Therefore, the ability to accurately detect and control the temperature and uniformity of the thermal field has become a bottleneck for improving crystal quality and yield. Summary of the invention

[0004] 1. Technical issues to be resolved

[0005] In view of the deficiencies in the prior art, the present invention provides a silicon carbide crystal growth furnace and a crystal growth method, which solve the problems of uneven distribution of the thermal field and large deviation between theoretical results and actual results during the actual growth process of silicon carbide crystals.

[0006] (II) Technical solution

[0007] To achieve the above objectives, the present invention is implemented through the following technical solutions: A silicon carbide crystal growth furnace, comprising a vacuum heating chamber, a resistance heater for providing a heating source is provided in the vacuum heating chamber, an exhaust pipeline is provided on the vacuum heating chamber, and further comprising:

[0008] A crucible assembly, the crucible assembly comprising a crucible lifting rod, the lower end of the crucible lifting rod is fixedly connected to a crucible cover, the lower part of the crucible cover is detachably connected to a crucible, silicon carbide powder is arranged in the crucible, a side of the crucible cover facing the silicon carbide powder is provided with a silicon carbide seed crystal through a stress relief assembly, and the stress relief assembly can conduct heat and provide a silicon carbide seed crystal installation position;

[0009] The stress relief assembly includes a seed crystal mounting portion, a seed crystal limiting portion, and a temperature conduction portion fixed as one, and the number of the seed crystal limiting portion and the temperature conduction portion is the same;

[0010] An integrated moving mechanism, which is arranged at the top of the vacuum heating chamber and is fixedly connected to the crucible lifting rod, and can drive the crucible assembly to rotate, axially lift, and radially move horizontally;

[0011] A temperature measuring component, the temperature measuring component is arranged on the crucible component, the temperature measuring component comprises an upper cover temperature measuring window and an upper temperature measuring component, a lower cover temperature measuring window and a lower temperature measuring component, and a lower cover edge temperature measuring window and an edge temperature measuring component, the upper cover temperature measuring window and the upper temperature measuring component are arranged at the center of the crucible cover, the lower cover temperature measuring window and the lower temperature measuring component are arranged at the center of the bottom of the crucible, and the lower cover edge temperature measuring window and the edge temperature measuring component are arranged at the circumferential edge of the crucible cover;

[0012] A control monitoring module is provided outside the vacuum heating chamber. The control monitoring module is used to analyze the temperature measurement value of the temperature measuring component and draw a temperature-time curve, and to control the integrated moving mechanism in real time. The axial and radial temperature gradients of the crucible and the uniformity of the radial thermal field distribution are determined by measuring the temperature at three locations of the temperature measuring component. The integrated moving mechanism is used to adjust the position of the crucible during the growth process, thereby obtaining an ideal thermal field distribution, so that the crystal grows uniformly in a steady-state thermal field, and obtains high-quality crystals with low defect density and low stress. At the same time, the temperature detection of the stress relief component can improve the uniformity of the heating temperature of the silicon carbide seed crystal, reduce the internal stress of the silicon carbide seed crystal growth process, and improve the quality of the silicon carbide crystal. In addition, since the present invention adopts a DC resistive heater, the high temperature zone distribution range is larger and more uniform than that of an induction heater, which is suitable for the growth of large-size and thick silicon carbide crystals, greatly improving the utilization rate of raw materials and energy.

[0013] Preferably, the integrated moving mechanism has a rotation rate range of 0.1 to 5 rpm, an axial pulling rate range of 0.05 to 10 mm / h, and a radial horizontal moving rate range of 0.05 to 10 mm / h.

[0014] Preferably, the crucible lifting rod has a length of 100 to 300 mm and an inner diameter of 10 to 30 mm.

[0015] Preferably, the diameter of the crucible cover is 20 to 50 mm larger than the diameter of the crucible.

[0016] Preferably, the diameters of the upper cover temperature measuring window, the lower cover temperature measuring window and the lower cover edge temperature measuring window in the temperature measuring assembly are all less than or equal to 20 mm, the lower cover edge temperature measuring window is concentrically arranged with the crucible cover, and is used to measure the temperature of the edge portion of the crucible cover that extends beyond the crucible, and the lower cover edge temperature measuring window and the edge temperature measuring component are staggered with the conduction temperature portion.

[0017] Preferably, the resistance heater uses a two-phase DC power supply with a resistance range of 10-1000 mΩ.

[0018] Preferably, the seed crystal limiting portion is arranged vertically.

[0019] Preferably, the seed crystal limiting portion is inclined inward from top to bottom.

[0020] The present invention also provides a method for growing a silicon carbide crystal, using the above-mentioned silicon carbide crystal growth furnace, comprising the following steps:

[0021] Step 1: bonding the seed crystal to the bottom surface of the crucible cover through a stress relief assembly;

[0022] Step 2: Filling silicon carbide powder into a crucible;

[0023] Step 3: Closely monitor the axial and radial temperatures and the uniformity of temperature distribution through the temperature measuring component;

[0024] Step 4: Difference the temperature values ​​of the upper cover temperature measuring window and the upper temperature measuring component and the lower cover edge temperature measuring window and the edge temperature measuring component to obtain the result Z, and determine whether the difference Z is within the standard value range; draw a temperature-time curve according to the real-time temperature value measured by the temperature measuring component, and determine whether the temperature-time curve is uniform and whether the temperature is within the preset range. If the temperature-time curve is uniform, the temperature is within the preset range, and the difference Z is within the standard value range, execute step 5; if the temperature-time curve is not uniform, the temperature is outside the preset range, and the difference Z is outside the standard value range, execute step 6;

[0025] Step 5: Lower the crucible to perform in-situ annealing and proceed to step 7;

[0026] Step 6: Control the integrated moving mechanism through the control monitoring module to drive the crucible assembly to rotate, axially pull, and radially move horizontally, and adjust the position of the crucible assembly in real time until the difference Z is within the standard value range, the temperature-time curve is uniform, and the temperature is within the preset range;

[0027] Step 7: Take out the silicon carbide crystal.

[0028] Preferably, the pressure of the crucible during the growth stage is 6 mbar, the temperature difference between the upper cover temperature measuring window and the upper temperature measuring component and the lower cover temperature measuring window and the lower temperature measuring component during the growth stage is 50°C-200°C, the temperature range of the upper cover temperature measuring window and the upper temperature measuring component during the growth stage is 2100°C-2200°C, the temperature range of the lower cover edge temperature measuring window and the edge temperature measuring component during the growth stage is 2100°C-2250°C, and the standard numerical range of the upper cover temperature measuring window and the upper temperature measuring component and the lower cover edge temperature measuring window and the edge temperature measuring component during the growth stage is 0-100.

[0029] (III) Beneficial effects

[0030] The present invention provides a silicon carbide crystal growth furnace and a crystal growth method. The present invention has the following beneficial effects:

[0031] Compared with the prior art, the silicon carbide crystal growth furnace and silicon carbide crystal growth method of the present invention determine the axial and radial temperature gradients of the crucible and the uniformity of the radial thermal field distribution by measuring the temperature at three locations of the temperature measuring component, and utilize an integrated moving mechanism to adjust the position of the crucible during the growth process, thereby obtaining an ideal thermal field distribution, allowing the crystal to grow uniformly in a steady-state thermal field, and obtaining high-quality crystals with low defect density and low stress. At the same time, the temperature detection of the stress relief component can improve the uniformity of the heating temperature of the silicon carbide seed crystal, reduce the internal stress in the growth process of the silicon carbide seed crystal, and improve the quality of the silicon carbide crystal. In addition, since the present invention adopts a DC resistive heater, the distribution range of the high-temperature zone is larger and more uniform than that of an induction heater, which is suitable for the growth of large-size and thick silicon carbide crystals, greatly improving the utilization rate of raw materials and energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a structural schematic diagram of a silicon carbide crystal growth furnace of the present invention;

[0033] Figure 2 It is a schematic structural diagram of the stress relief component part of the present invention;

[0034] Figure 3 is a perspective view of a stress relief assembly of the present invention;

[0035] Figure 4 A bottom view of the distribution state of the stress relief assembly of the present invention;

[0036] Figure 5 A bottom view showing a distribution state of a stress relief assembly according to another embodiment of the present invention;

[0037] Figure 6 It is a schematic diagram of the process of the silicon carbide crystal growth method of the present invention.

[0038] Among them, 1. vacuum heating chamber; 2. resistance heater; 3. crucible cover; 4. crucible; 5. silicon carbide seed crystal; 6. silicon carbide powder; 7. exhaust pipeline; 8. upper cover temperature measuring window and upper temperature measuring component; 9. integrated moving mechanism; 10. crucible lifting rod; 12. lower cover temperature measuring window and lower temperature measuring component; 13. lower cover edge temperature measuring window and edge temperature measuring component; 14. stress relief assembly; 1401. seed crystal mounting part; 1402. seed crystal limiting part; 1403. conduction temperature part. DETAILED DESCRIPTION

[0039] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0040] Embodiment 1:

[0041] like Figure 1-Figure 4 , Figure 6 As shown, an embodiment of the present invention provides a silicon carbide crystal growth furnace, including a vacuum heating chamber 1, a resistance heater 2 for providing a heating heat source is provided in the vacuum heating chamber 1, the resistance heater 2 uses a two-phase DC power supply, and the resistance range is 10-1000mΩ, and an exhaust pipeline 7 is provided on the vacuum heating chamber 1, and further includes:

[0042] The resistance heater 2 is a DC resistance heater, and the distribution range of the high temperature zone is larger and more uniform than that of the induction heater, which is suitable for the growth of large-size and thick silicon carbide crystals, greatly improving the utilization rate of raw materials and energy;

[0043] A crucible assembly, the crucible assembly includes a crucible lifting rod 10, the lower end of the crucible lifting rod 10 is fixedly connected to a crucible cover 3, the lower part of the crucible cover 3 is detachably connected to a crucible 4, silicon carbide powder 6 is arranged in the crucible 4, a silicon carbide seed crystal 5 is arranged on the side of the crucible cover 3 facing the silicon carbide powder 6 through a stress relief assembly 14, the stress relief assembly 14 can conduct heat and provide a mounting position for the silicon carbide seed crystal 5, the stress relief assembly 14 includes a seed crystal mounting portion 1401, a seed crystal limiting portion 1402, and a temperature conduction portion 1403 fixed as one, the number of the seed crystal limiting portion 1402 and the temperature conduction portion 1403 is the same, and the seed crystal limiting portion 1402 is vertically arranged; the crucible lifting rod 10 has a length of 100 to 300 mm and an inner diameter of 10 to 30 mm, and the diameter of the crucible cover 3 is 20 to 50 mm larger than the diameter of the crucible;

[0044] refer to Figure 1 , Figure 2 , Figure 3 , Figure 4The temperature conduction portion 1403 is in contact with the outer surface of the crucible 4, absorbs the heat generated by the resistance heater 2, and conducts it to the seed crystal mounting portion 1401 and the seed crystal limiting portion 1402. The silicon carbide seed crystal 5 can conduct heat not only at the end face but also at the circumferential side face, so that the temperature of the silicon carbide seed crystal 5 rises evenly, and the temperature difference between the silicon carbide seed crystal 5 and the inner wall of the crucible 4 is reduced, thereby increasing the internal stress of the silicon carbide seed crystal 5 during the growth stage and improving the quality of the silicon carbide crystal.

[0045] The resistance heater 2 heats the silicon carbide powder 6 in the crucible 4, and forms new silicon carbide crystals on the surface of the silicon carbide seed crystal 5 by PVT (physical vapor transport). The exhaust pipeline 7 is used to extract the gas generated during the reaction.

[0046] The integrated moving mechanism 9 is arranged at the top of the vacuum heating chamber 1. The integrated moving mechanism 9 is fixedly connected to the crucible lifting rod 10, and can drive the crucible assembly to rotate, axially lift, and radially move horizontally. The rotation rate range of the integrated moving mechanism 9 is 0.1-5rpm, the axial lifting rate range is 0.05-10mm / h, and the radial horizontal movement rate range is 0.05-10mm / h;

[0047] A temperature measuring assembly, the temperature measuring assembly is arranged on the crucible assembly, the temperature measuring assembly includes an upper cover temperature measuring window and an upper temperature measuring component 8, a lower cover temperature measuring window and a lower temperature measuring component 12, and a lower cover edge temperature measuring window and an edge temperature measuring component 13. The upper cover temperature measuring window and the upper temperature measuring component 8 are arranged at the center of the crucible cover 3, the lower cover temperature measuring window and the lower temperature measuring component 12 are arranged at the center of the bottom of the crucible 4, the lower cover edge temperature measuring window and the edge temperature measuring component 13 are arranged at the circumferential edge of the crucible cover 3, the diameters of the upper cover temperature measuring window, the lower cover temperature measuring window and the lower cover edge temperature measuring window in the temperature measuring assembly are all less than or equal to 20 mm, the lower cover edge temperature measuring window is arranged concentrically with the crucible cover 3, and is used to measure the temperature of the edge portion of the crucible cover 3 exceeding the crucible 4, and the lower cover edge temperature measuring window and the edge temperature measuring component 13 are staggered with the conduction temperature portion 1403;

[0048] refer to Figure 5 There are at least three temperature measuring windows and edge temperature measuring components 13 on the edge of the lower cover, and they are evenly arranged around the circumference. The temperature measuring component can collect the temperature of the back of the silicon carbide seed crystal 5 in contact with the stress relief component 14, the bottom of the crucible 4 and the edge of the crucible cover 3, and monitor the temperature of the upper, lower and edge of the crucible assembly, which is of great significance for the control and research of crystal growth.

[0049] The control monitoring module is arranged outside the vacuum heating chamber 1 . The control monitoring module is used to analyze the temperature measurement value of the temperature measurement component and draw a temperature-time curve, and to control the integrated moving mechanism 9 in real time.

[0050] refer to Figure 6The present invention also provides a method for growing a silicon carbide crystal, using the above-mentioned silicon carbide crystal growth furnace, comprising the following steps:

[0051] Step 1: bonding the seed crystal to the bottom surface of the crucible cover 3 through the stress relief assembly 14;

[0052] Step 2: Filling silicon carbide powder 6 into the crucible 4;

[0053] Step 3: Closely monitor the axial and radial temperatures and the uniformity of temperature distribution through the temperature measuring component;

[0054] Step 4: Difference the temperature values ​​of the upper cover temperature measuring window and the upper temperature measuring component 8 and the lower cover edge temperature measuring window and the edge temperature measuring component 13 to obtain the result Z, and determine whether the difference Z is within the standard value range; draw a temperature-time curve according to the real-time temperature value measured by the temperature measuring component, and determine whether the temperature-time curve is uniform and whether the temperature is within the preset range. If the temperature-time curve is uniform, the temperature is within the preset range, and the difference Z is within the standard value range, execute step five; if the temperature-time curve is uneven, the temperature is outside the preset range, and the difference Z is outside the standard value range, execute step six, wherein the preset range is: the pressure of the crucible 4 during the growth stage is 6 mbar, the temperature difference between the upper cover temperature measuring window and the upper temperature measuring component 8 and the lower cover temperature measuring window and the lower temperature measuring component 12 during the growth stage is 50°C-200°C, and the upper cover temperature measuring window is 0. The temperature range of the window and the upper temperature measuring component 8 during the growth stage is 2100°C-2200°C, the temperature range of the lower cover edge temperature measuring window and the edge temperature measuring component 13 during the growth stage is 2100°C-2250°C, the standard numerical range of the upper cover temperature measuring window and the upper temperature measuring component 8 and the lower cover edge temperature measuring window and the edge temperature measuring component 13 during the growth stage is 0-100. In this embodiment, the crucible lifting rod 10 used is 150mm long and 20mm in inner diameter. The diameter of the crucible cover 3 is 30mm larger than the crucible. The pressure of the crucible 4 during the growth stage is 6mbar, the temperature of the upper cover temperature measuring window and the temperature measuring component 8 is 2150°C, the temperature of the lower cover temperature measuring window and the temperature measuring component 12 is 2270°C, and the temperature of the lower cover edge temperature measuring window and the temperature measuring component 13 is 2170°C. After 100 hours of growth, the resulting crystal has few defects and low stress.

[0055] Step 5: lowering the crucible 4 for in-situ annealing, executing step 7, specifically, lowering the crucible 4 through the integrated moving mechanism 9 to reduce the temperature difference between the upper and lower parts, so as to facilitate in-situ annealing;

[0056] Step 6: Control the integrated moving mechanism 9 through the control monitoring module to drive the crucible assembly to rotate, axially pull, and radially move horizontally, and adjust the position of the crucible assembly in real time until the difference Z is within the standard value range, the temperature-time curve is uniform, and the temperature is within the preset range;

[0057] Step 7: Take out the silicon carbide crystal.

[0058] Embodiment 2:

[0059] refer to Figure 5 The difference from the first embodiment is that the seed crystal limiting portion 1402 is tilted inward from top to bottom. This method can provide a certain clamping force for the silicon carbide seed crystal 5 and improve the stability of the fixation of the silicon carbide seed crystal 5.

[0060] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A silicon carbide crystal growth furnace, comprising a vacuum heating chamber (1), wherein a resistance heater (2) for providing a heating source is arranged in the vacuum heating chamber (1), and an exhaust pipeline (7) is arranged on the vacuum heating chamber (1), characterized in that: Also includes: A crucible assembly, the crucible assembly comprising a crucible lifting rod (10), the lower end of the crucible lifting rod (10) being fixedly connected to a crucible cover (3), the lower part of the crucible cover (3) being detachably connected to a crucible (4), the crucible (4) being provided with silicon carbide powder (6), a silicon carbide seed crystal (5) being provided on a side of the crucible cover (3) facing the silicon carbide powder (6) through a stress relief assembly (14), the stress relief assembly (14) being capable of conducting heat and providing a mounting position for the silicon carbide seed crystal (5); The stress relief assembly (14) comprises a seed crystal mounting portion (1401), a seed crystal limiting portion (1402), and a temperature conduction portion (1403) fixed as one, and the number of the seed crystal limiting portion (1402) and the temperature conduction portion (1403) is the same; An integrated moving mechanism (9), wherein the integrated moving mechanism (9) is arranged at the top of the vacuum heating chamber (1), and the integrated moving mechanism (9) is fixedly connected to the crucible lifting rod (10), and can drive the crucible assembly to rotate, axially lift, and radially move horizontally; A temperature measuring component, the temperature measuring component is arranged on the crucible component, the temperature measuring component comprises an upper cover temperature measuring window and an upper temperature measuring component (8), a lower cover temperature measuring window and a lower temperature measuring component (12), and a lower cover edge temperature measuring window and an edge temperature measuring component (13), the upper cover temperature measuring window and the upper temperature measuring component (8) are arranged at the center of the crucible cover (3), the lower cover temperature measuring window and the lower temperature measuring component (12) are arranged at the center of the bottom of the crucible (4), and the lower cover edge temperature measuring window and the edge temperature measuring component (13) are arranged at the circumferential edge of the crucible cover (3); A control monitoring module is arranged outside the vacuum heating chamber (1), and is used to analyze the temperature measurement value of the temperature measurement component and draw a temperature-time curve, and to control the integrated moving mechanism (9) in real time.

2. A silicon carbide crystal growth furnace according to claim 1, characterized in that: The integrated moving mechanism (9) has a rotation rate range of 0.1 to 5 rpm, an axial pulling rate range of 0.05 to 10 mm / h, and a radial horizontal moving rate range of 0.05 to 10 mm / h.

3. The silicon carbide crystal growth furnace according to claim 1, characterized in that: The crucible lifting rod (10) has a length of 100 to 300 mm and an inner diameter of 10 to 30 mm.

4. The silicon carbide crystal growth furnace according to claim 1, characterized in that: The diameter of the crucible cover (3) is 20 to 50 mm larger than the diameter of the crucible.

5. The silicon carbide crystal growth furnace according to claim 1, characterized in that: The diameters of the upper cover temperature measuring window, the lower cover temperature measuring window and the lower cover edge temperature measuring window in the temperature measuring assembly are all less than or equal to 20 mm. The lower cover edge temperature measuring window is arranged concentrically with the crucible cover (3) and is used to measure the temperature of the edge portion of the crucible cover (3) that exceeds the crucible (4). The lower cover edge temperature measuring window and the edge temperature measuring component (13) are arranged alternately with the conduction temperature portion (1403).

6. The silicon carbide crystal growth furnace according to claim 1, characterized in that: The resistance heater (2) uses a two-phase DC power supply and has a resistance range of 10-1000 mΩ.

7. The silicon carbide crystal growth furnace according to claim 1, characterized in that: The seed crystal limiting portion (1402) is arranged vertically.

8. The silicon carbide crystal growth furnace according to claim 1, characterized in that: The seed crystal limiting portion (1402) is arranged to be inclined inward from top to bottom.

9. A method for growing silicon carbide crystals, characterized in that: The silicon carbide crystal growth furnace according to any one of claims 1 to 8 comprises the following steps: Step 1: bonding the silicon carbide seed crystal (5) to the bottom surface of the crucible cover (3) through a stress relief assembly (14); Step 2: Filling silicon carbide powder (6) into the crucible (4); Step 3: Closely monitor the axial and radial temperatures and the uniformity of temperature distribution through the temperature measuring component; Step 4: subtract the temperature values ​​of the upper cover temperature measuring window and the upper temperature measuring component (8) from the lower cover edge temperature measuring window and the edge temperature measuring component (13) to obtain a result Z, and determine whether the difference Z is within the standard value range; draw a temperature-time curve based on the real-time temperature value measured by the temperature measuring component, and determine whether the temperature-time curve is uniform and whether the temperature is within a preset range. If the temperature-time curve is uniform, the temperature is within the preset range, and the difference Z is within the standard value range, execute step 5; if the temperature-time curve is not uniform, the temperature is outside the preset range, and the difference Z is outside the standard value range, execute step 6; Step 5: lower the crucible (4) for in-situ annealing and execute step 7; Step 6: Control the integrated moving mechanism (9) through the control monitoring module to drive the crucible assembly to rotate, axially pull, and radially move horizontally, and adjust the position of the crucible assembly in real time until the difference Z is within the standard value range, the temperature-time curve is uniform, and the temperature is within the preset range; Step 7: Take out the silicon carbide crystal.

10. The method for growing a silicon carbide single crystal according to claim 9, characterized in that: The pressure of the crucible (4) during the growth stage is 6 mbar, the temperature difference between the upper cover temperature measuring window and the upper temperature measuring component (8) and the lower cover temperature measuring window and the lower temperature measuring component (12) during the growth stage is 50°C-200°C, the temperature range of the upper cover temperature measuring window and the upper temperature measuring component (8) during the growth stage is 2100°C-2200°C, the temperature range of the lower cover edge temperature measuring window and the edge temperature measuring component (13) during the growth stage is 2100°C-2250°C, and the standard numerical range of the upper cover temperature measuring window and the upper temperature measuring component (8) and the lower cover edge temperature measuring window and the edge temperature measuring component (13) during the growth stage is 0-100.

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