Apparatus and Method for Detecting Resistivity of Wafer

Abstract

The present invention discloses a resistivity detection device and method for a wafer, relating to the technical field of detection. The device includes a probe and a measuring instrument. Four probes are arranged at the lower end of the probe. The adjusting mechanism includes a receiving groove formed in the probe. A sleeve is rotatably connected in the receiving groove. A first connecting rod close to the probe is fixedly connected to the sleeve. A second connecting rod far from the probe is rotatably connected to the sleeve. Swing rods are hinged at both ends of the first connecting rod and the second connecting rod. A support rod is hinged at the free end of each swing rod. The support rod is slidably connected to the probe. The probe is slidably connected to the corresponding support rod. The transformation mechanism is arranged in the receiving groove and is used to adjust the first connecting rod and the second connecting rod to be in a parallel state or an interleaved state. The present invention is applicable to the detection requirements that need to frequently change the probe pitch, meets the requirements of various resistivity measurements, and improves the detection convenience.

Description

Technical Field

[0001] The present invention relates to the field of detection technologies, and particularly relates to a resistivity detection device and method for a wafer. Background Art

[0002] In the field of semiconductor manufacturing, the resistivity of a semiconductor wafer is one of the very crucial parameters. Whether the resistivity is within the qualified range directly affects the overall performance of the semiconductor wafer. Therefore, in actual production, it is necessary to detect the resistivity of the semiconductor wafer. When detecting the resistivity of the wafer, it is generally detected by the four-probe method. This is to place four equally spaced probes on the surface of the wafer, allow current to flow in from the two outer probes, measure the voltage between the two inner probes, and calculate the resistivity according to the formula.

[0003] However, when using the four-probe method to detect the resistivity of a wafer, since the distance between multiple probes is fixed, when detecting the resistivity of a small-area wafer, the arrangement of the probes cannot be adjusted according to the situation of the wafer to detect the micro-measurement area. At the same time, when detecting the resistivity of the wafer under special circumstances, it is usually necessary to replace the probe heads with different probe spacings to detect the wafer to ensure the accuracy of the detected data. This not only is not applicable to the occasions that require frequent adjustment of the probe spacing but also is not conducive to improving the timeliness of detecting the resistivity of the wafer.

[0004] Therefore, an invention of a resistivity detection device and method for a wafer is made to solve the above problems. Summary of the Invention

[0005] The main object of the present invention is to provide a resistivity detection device and method for a wafer, which can effectively solve the technical problems in the background art.

[0006] To achieve the above object, the technical solution adopted by the present invention is: a resistivity detection device for a wafer, including a probe head and a measuring instrument. Four equally spaced probes are arranged at the lower end of the probe head. The device further includes:

[0007] An adjusting mechanism, the adjusting mechanism includes a receiving groove opened in the probe head. A sleeve is rotatably connected in the receiving groove. A first connecting rod close to the probe is fixedly connected to the sleeve. A second connecting rod far from the probe is rotatably connected to the sleeve. Both ends of the first connecting rod and the second connecting rod are hinged with swing rods. A support rod is hinged to the free end of each swing rod. The support rod is slidably connected to the probe head. The probe is slidably connected to the corresponding support rod;

[0008] A transformation mechanism, the transformation mechanism is arranged in the receiving groove and is used to adjust the first connecting rod and the second connecting rod to be in a parallel state or an interleaved state;

[0009] A fine-tuning mechanism, the fine-tuning mechanism is arranged in the probe and is used to adjust the distance between the plurality of probes;

[0010] A locking mechanism is arranged in the accommodating groove and is used to lock the rotation of the sleeve.

[0011] Preferably, the adjustment mechanism also includes a guide groove opened on the probe and connected to the accommodating groove, the support rod is located in the guide groove, the support rod is rotatably connected to a steering block, and the steering block is hingedly connected to the corresponding free end of the rocker arm.

[0012] Preferably, the conversion mechanism includes two blocking plates fixedly connected to the inner wall of the accommodating groove, and the opposite surfaces of the two blocking plates can contact the second connecting rod. A buffer groove is opened on the circumferential side of the sleeve, and a buffer block is slidably connected in the buffer groove. The buffer block is fixedly connected to the second connecting rod, and the sleeve is connected to the buffer block through a first elastic member. When the buffer block squeezes the first elastic member and contacts one end of the buffer groove, the first connecting rod and the second connecting rod are in a parallel state. When the buffer block no longer squeezes the first elastic member and contacts the other end of the buffer groove, the first connecting rod and the second connecting rod are in an alternating distribution state.

[0013] Preferably, the fine-tuning mechanism includes an adjustment plate slidably connected to the probe, the adjustment plate is provided with a plurality of adjustment slots corresponding to the probes, the adjustment slots are in an inclined state, and the distances between two adjacent adjustment slots that are in the same straight line are equal, the probe can extend into the corresponding adjustment slot, the support rod is provided with a slide slot at one end close to the probe, a slider is slidably connected in the slide slot, the slider is fixedly connected to the corresponding probe, and the slider is connected to the slide slot by a second elastic member.

[0014] Preferably, a cylinder is rotatably connected in the accommodating groove, a guide groove is provided on the cylinder, a push rod is fixedly connected to the side of the adjustment plate close to the cylinder, the free end of the push rod extends into the guide groove, and a clearance groove is provided on the adjustment plate, and one of the probes can slide in the clearance groove.

[0015] Preferably, the locking mechanism includes a rotating shaft rotatably connected to the accommodating groove, the rotating shaft is rotatably connected to the sleeve, a worm wheel is fixedly connected to the rotating shaft, a worm screw meshing with the worm wheel is rotatably connected in the accommodating groove, one end of the worm screw extends out of the probe and is fixedly connected to a knob.

[0016] Preferably, the cylinder is fixedly connected to the worm coaxially. An autorotation groove is formed on the inner edge surface of the sleeve. An autorotation block is slidably connected in the autorotation groove. The autorotation block and the autorotation groove are connected by a third elastic member. When the autorotation block contacts one end of the autorotation groove, the position of the adjusting plate remains unchanged at this time. When the autorotation block slides towards the other end of the autorotation groove, the adjusting plate slides towards the probe at this time.

[0017] Preferably, the two probes on the first connecting rod can be located between the two probes on the second connecting rod. Wires are connected to the probes. A voltmeter is electrically connected between the two wires on the first connecting rod. The two wires on the second connecting rod are electrically connected through a power supply.

[0018] Preferably, both the voltmeter and the power supply are located inside the measuring instrument. A base is provided at the upper end of the measuring instrument. The base is slidably connected with a mounting bracket through a guide rod. The probe can be inserted into the mounting bracket.

[0019] A method for detecting the resistivity of a wafer includes the following steps:

[0020] S1: First, place the wafer to be measured on the base and install the probe on the mounting bracket.

[0021] S2: Secondly, adjust the distance between the probe and the wafer to be measured through the mounting bracket, and the shape and spacing of the probe can be adjusted through the adjusting mechanism to meet different wafer measurements.

[0022] S3: Then, provide a current through the power supply so that the power supply forms a loop through the wire, the probe and the wafer to be measured, and the voltmeter, the wire and the probe form a loop through the wafer to be measured. Measure the voltage drop through the voltmeter.

[0023] S4: Finally, calculate the resistivity of the wafer to be measured through the applied current, the voltage drop measured by the voltmeter, and the distance between the probes applying the current by a formula, and measure multiple times to determine the average value to reduce the detection error.

[0024] The technical effects and advantages of the present invention:

[0025] 1. Through the first connecting rod and the second connecting rod, the present invention can convert between parallel and staggered states to form probes arranged in a square pattern or a linear pattern. The probes arranged in the positive direction can not only form a smaller measurement micro-region, which is more suitable for detecting the electrical characteristics of local micro-regions of a sample, but also change the side length of the probes arranged in the positive direction within the range of the measurement micro-region, thereby facilitating the position adjustment of the probes within the measurement micro-region, and then measuring the resistivity, which can effectively reflect the microscopic inhomogeneity of the sample. At the same time, the linearly arranged probes can better cover the measurement region, improving the accuracy when detecting the resistivity, and through the probes, the transformation can be carried out on the same probe head, which not only facilitates the adaptation to wafers of different specifications, avoids the problem of continuously replacing different probe heads for detection, further improves the timeliness of detecting the resistivity of the wafer, and thus facilitates the comprehensive detection of the resistivity of the wafer.

[0026] 2. Through the setting of the adjusting plate and the adjusting groove, when multiple probes are converted from a positive direction array to a linear array, the distance between multiple probes can be adjusted equidistantly through the adjusting groove on the adjusting plate, thereby facilitating the equidistant adjustment of the distance between two adjacent probes. This not only facilitates the coverage of a large-area wafer by multiple probes, but also facilitates the change of the spacing between adjacent probes, and detecting the resistivity of the wafer according to different spacings. At the same time, it is convenient to better detect the resistivity of the wafer under different characteristics, which not only improves the detection efficiency and accuracy, but also meets the requirements of various resistivity measurements. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a schematic diagram of the overall structure of the present invention;

[0028] Figure 2 is a schematic sectional view of the present invention;

[0029] Figure 3 is of the present invention Figure 2 partial enlarged view at A in;

[0030] Figure 4 is a schematic diagram of the structure at the adjusting mechanism and the fine-tuning mechanism of the present invention;

[0031] Figure 5 is a top view of one form of the adjusting mechanism of the present invention;

[0032] Figure 6 is a top view of another form of the adjusting mechanism of the present invention;

[0033] Figure 7 is a schematic diagram of the structure at the probes arranged in a square pattern of the present invention;

[0034] Figure 8 is a schematic diagram of the structure at the probes arranged in a linear pattern of the present invention;

[0035] Figure 9 It is an exploded view of the structures at the first connecting rod and the second connecting rod in the present invention;

[0036] Figure 10 It is a sectional view of the structures at the rotating shaft and the sleeve in the present invention;

[0037] Figure 11 It is a schematic view of the structure at the connection between the support rod and the probe in the present invention.

[0038] In the figure: 1. Probe head; 101. Measuring instrument; 2. Probe;

[0039] 3. Adjusting mechanism; 301. Accommodating groove; 302. Sleeve; 303. First connecting rod; 304. Second connecting rod; 305. Swing rod; 306. Support rod; 307. Guide groove; 308. Steering block;

[0040] 4. Transforming mechanism; 401. Baffle plate; 402. Buffer groove; 403. Buffer block; 404. First elastic member;

[0041] 5. Fine-tuning mechanism; 501. Adjusting plate; 502. Adjusting groove; 503. Sliding groove; 504. Slide block; 505. Second elastic member; 506. Cylinder; 507. Guide groove; 508. Thumb rod; 509. Yielding groove;

[0042] 6. Locking mechanism; 601. Rotating shaft; 602. Worm gear; 603. Worm; 604. Knob; 605. Self-rotating groove; 606. Self-rotating block; 607. Third elastic member;

[0043] 7. Wire; 8. Voltmeter; 9. Power supply; 10. Base; 11. Guide rod; 12. Mounting bracket. Detailed implementation manners

[0044] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0045] Embodiment 1

[0046] In the prior art, when detecting the resistivity of a wafer, the four-probe method is generally used for detecting the resistivity of the wafer. However, during the detection process, since the distances between multiple probes are fixed and the arrangement of the probes cannot be adjusted according to the situation of the wafer, when detecting the resistivity of a wafer in special cases, it is usually necessary to replace the probe head with different probe spacings to ensure the accuracy of the detected data. Therefore, this embodiment is specifically invented to solve the above problems.

[0047] As shown Figures 1 - 5 in the figure, this embodiment provides a resistivity detection device for a wafer, including a probe 1 and a measuring instrument 101. Four equally spaced probes 2 are provided at the lower end of the probe 1, and further includes:

[0048] The adjusting mechanism 3 includes a receiving groove 301 opened in the probe 1. A sleeve 302 is rotatably connected in the receiving groove 301. A first connecting rod 303 close to the probe 2 is fixedly connected to the sleeve 302. A second connecting rod 304 far from the probe 2 is rotatably connected to the sleeve 302. Swing rods 305 are hinged at both ends of the first connecting rod 303 and the second connecting rod 304. A support rod 306 is hinged at the free end of each swing rod 305. The support rod 306 is slidably connected to the probe 1, and the probe 2 is slidably connected to the corresponding support rod 306. The adjusting mechanism 3 further includes a guiding groove 307 opened on the probe 1 and communicating with the receiving groove 301. The support rod 306 is located in the guiding groove 307. A turning block 308 is rotatably connected to the support rod 306, and the turning block 308 is hinged to the free end of the corresponding swing rod 305.

[0049] The transformation mechanism 4 is arranged in the receiving groove 301 and is used to adjust the first connecting rod 303 and the second connecting rod 304 to be in a parallel state or an intersecting state. The transformation mechanism 4 includes two blocking plates 401 fixedly connected to the inner wall of the receiving groove 301. The opposite surfaces of the two blocking plates 401 can both contact the second connecting rod 304. A buffer groove 402 is opened on the circumferential side of the sleeve 302. A buffer block 403 is slidably connected in the buffer groove 402. The buffer block 403 is fixedly connected to the second connecting rod 304. The sleeve 302 is connected to the buffer block 403 through a first elastic member 404. When the buffer block 403 presses the first elastic member 404 and contacts one end of the buffer groove 402, at this time, the first connecting rod 303 and the second connecting rod 304 are in a parallel state. When the buffer block 403 no longer presses the first elastic member 404 and contacts the other end of the buffer groove 402, at this time, the first connecting rod 303 and the second connecting rod 304 are in an intersecting distribution state.

[0050] The two probes 2 on the first connecting rod 303 can be located between the two probes 2 on the second connecting rod 304. Wires 7 are connected to the probes 2. A voltmeter 8 is electrically connected between the two wires 7 on the first connecting rod 303. The two wires 7 on the second connecting rod 304 are electrically connected through a power supply 9. The voltmeter 8 and the power supply 9 are both located in the measuring instrument 101. A base 10 is provided at the upper end of the measuring instrument 101. The base 10 is slidably connected with a mounting frame 12 through a guide rod 11. The probe 1 can be inserted into the mounting frame 12.

[0051] For actual use, first place the wafer to be measured on the base 10, install the probe 1 on the mounting bracket 12, and then adjust the mounting bracket 12 to drive the probe 1 to move towards the wafer. When the probe 2 contacts the wafer surface, at this time, the power supply 9 on the measuring instrument 101 provides current to form a loop through the wire 7 and the probe 2 acting on the wafer to be measured. At this time, the voltmeter 8 forms a loop through the wire 7, the probe 2 and the wafer to be measured, and the voltage is measured through the voltmeter 8. Since the distances between adjacent probes 2 are equal, and according to the resistivity ρ calculation formula: ρ = V / (I * d), (where V is the voltage drop between the voltage measurement probes, I is the applied current, and d is the distance between the current probes), the resistivity of the wafer is calculated. Since the connection methods between the measuring instrument 101, the power supply 9, the voltmeter 8 and the probe 1 are all prior arts, the specific connection methods will not be elaborated here. And a calculation display panel is provided on the measuring instrument 101, which can directly display the resistivity value of the wafer, facilitating the staff to judge the state of the wafer.

[0052] When it is necessary to change the distance between the probes 2 for resistivity detection of the wafer, first rotate the sleeve 302 forward. The sleeve 302 drives the first connecting rod 303 and the second connecting rod 304 to rotate. Since the included angle between the first connecting rod 303 and the second connecting rod 304 is 90°, and when the second connecting rod 304 is not subject to resistance during the rotation of the sleeve 302 driving the first connecting rod 303 and the second connecting rod 304, under the action of the first elastic member 404 and the buffer groove 402, it can ensure the constant angle of the first connecting rod 303 and the second connecting rod 304. When the sleeve 302 drives the first connecting rod 303 and the second connecting rod 304 to rotate forward synchronously, and the shape of the guide groove 307 is cross-shaped, the first connecting rod 303 and the second connecting rod 304 drive a plurality of support rods 306 to slide outwards along the guide groove 307 synchronously through the swing rod 305 and the turning block 308. The turning block 308 is slidably connected to the support rod 306, which is convenient for the first connecting rod 303 and the second connecting rod 304 to drive the support rod 306 to slide along the guide groove 307 better through the swing rod 305 and the turning block 308, so that a plurality of support rods 306 drive the corresponding side probes 2 to slide outwards, thereby increasing the area between the plurality of probes 2. And when the sleeve 302 is rotated reversely, the first connecting rod 303 and the second connecting rod 304 drive a plurality of support rods 306 to slide inwards along the guide groove 307 synchronously through the swing rod 305 and the turning block 308, and the support rod 306 drives the corresponding side probe 2 to slide inwards, which can perform comparative detection on wafers with small areas, facilitating the improvement of detection accuracy.

[0053] When resistivity detection needs to be performed on a large - area wafer, continue to rotate the sleeve 302 in the forward direction. The sleeve 302 drives the first connecting rod 303 and the second connecting rod 304 to rotate. When both sides of the second connecting rod 304 are in contact with the corresponding baffle 401, the second connecting rod 304 drives the two probes 2 connected to the power supply 9 to slide outward along the guide groove 307 to the maximum distance through the swing rod 305 and the steering block 308, and the second connecting rod 304, the swing rod 305 and the steering block 308 are in a straight - line state. The first connecting rod 303 drives the probe 2 connected to the voltmeter 8 to slide outward along the guide groove 307 to the maximum distance through the swing rod 305 and the steering block 308. Continue to rotate the sleeve 302. Due to the resistance of the baffle 401 on the second connecting rod 304, under the action of the buffer groove 402 and the buffer block 403, the second connecting rod 304 rotates in the opposite direction relative to the sleeve 302, and the first elastic member 404 is compressed.

[0054] When the first elastic member 404 is compressed to the limit position and the buffer block 403 slides from one end of the buffer groove 402 to the other end, at this time, the sleeve 302 drives the first connecting rod 303 to swing to a state parallel to the second connecting rod 304. During this process, the first connecting rod 303 drives the support rod 306 to slide relative to the guide groove 307 through the swing rod 305 and the steering block 308. And an inclined surface is provided at the middle side wall of the guide groove 307, which is convenient for the two probes 2 connected to the voltmeter 8 to slide into another branch of the guide groove 307, so that multiple support rods 306 and probes 2 are in a straight line. Since the sum of the lengths of the swing rod 305 and the steering block 308 is one - fourth of the lengths of the first connecting rod 303 and the second connecting rod 304, the distances between two adjacent probes 2 in the same straight line are equal. Thus, the arrangement of multiple probes 2 is changed from a positive - direction arrangement to a linear arrangement, which is convenient for resistivity detection of a large - area wafer.

[0055] In summary, through the first connecting rod 303 and the second connecting rod 304, the probes 2 can be converted between parallel or staggered states to form a square arrangement or a linear arrangement. The probes 2 arranged in the positive direction can not only form a smaller measurement micro - area, which is more suitable for detecting the electrical characteristics of local micro - areas of samples, but also can change the side length of the probes 2 arranged in the positive direction within the range of the measurement micro - area, which is beneficial for adjusting the position of the probes 2 within the measurement micro - area, so as to measure the resistivity, which can effectively reflect the microscopic inhomogeneity of the sample. At the same time, the linearly arranged probes 2 can better cover the measurement area, improve the accuracy when detecting the resistivity, and through the probes 2, the transformation can be carried out on the same probe head 1, which is not only convenient for adapting to wafers of different specifications, avoiding the problem of continuously replacing different probe heads for detection, further improving the timeliness of detecting the resistivity of the wafer, and thus facilitating the comprehensive detection of the resistivity of the wafer.

[0056] Embodiment 2

[0057] During use, it was found that when the probes 2 arranged in the positive direction were changed into the probes 2 arranged linearly, the positions of the probes 2 were fixed, and it was inconvenient to change the distance between the probes 2 to perform multiple resistivity measurements on the wafer, and it could not adapt to different measurement intervals. Therefore, further improvements were made on the basis of the above embodiments.

[0058] like Figures 5 - 11 As shown, the fine-tuning mechanism 5 is arranged in the probe 1, and is used for adjusting the distance between multiple probes 2. The fine-tuning mechanism 5 includes an adjusting plate 501 slidably connected to the probe 1, and the adjusting plate 501 is provided with multiple adjusting grooves 502 corresponding to the probes 2. The adjusting grooves 502 are in an inclined state, and the distances between two adjacent adjusting grooves 502 that are in the same straight line are equal. The probes 2 can extend into the corresponding adjusting grooves 502. A sliding groove 503 is provided at one end of the support rod 306 close to the probe 2, and a slider 504 is slidably connected in the sliding groove 503. The slider 504 is fixedly connected to the corresponding probe 2, and the slider 504 is connected to the sliding groove 503 through a second elastic member 505.

[0059] The locking mechanism 6 is arranged in the accommodating groove 301, and is used for locking the rotation of the sleeve 302. The locking mechanism 6 includes a rotating shaft 601 rotatably connected to the accommodating groove 301, the rotating shaft 601 is rotatably connected to the sleeve 302, a worm gear 602 is fixedly connected to the rotating shaft 601, a worm 603 meshing with the worm gear 602 is rotatably connected in the accommodating groove 301, one end of the worm gear 603 extends out of the probe 1 and is fixedly connected to a knob 604.

[0060] A cylinder 506 is rotatably connected in the accommodating groove 301, and a guide groove 507 is provided on the cylinder 506. A push rod 508 is fixedly connected to the side of the adjusting plate 501 close to the cylinder 506, and the free end of the push rod 508 extends into the guide groove 507. A clearance groove 509 is provided on the adjusting plate 501, and one of the probes 2 can slide in the clearance groove 509. The cylinder 506 is coaxially fixedly connected to the worm 603. A rotation groove 605 is provided on the inner edge surface of the sleeve 302, and a rotation block 606 is slidably connected in the rotation groove 605. The rotation block 606 is connected to the rotation groove 605 by a third elastic member 607. When the rotation block 606 contacts one end of the rotation groove 605, the position of the adjusting plate 501 remains unchanged. When the rotation block 606 slides to the other end of the rotation groove 605, the adjusting plate 501 slides toward the direction of the probe 2.

[0061] In actual use, when the first connecting rod 303 and the second connecting rod 304 are in a parallel state, the worm 603 is driven by the knob 604 to drive the worm wheel 602 to rotate. The worm 603 drives the cylinder 506 to rotate, and the worm wheel 602 drives the sleeve 302 to rotate through the rotating shaft 601. Since the guiding groove 507 is composed of an annular groove and an arc groove, and during the process of the first connecting rod 303 and the second connecting rod 304 swinging to the parallel state, the ejector rod 508 slides in the annular groove of the guiding groove 507, so that the position of the ejector rod 508 does not change. When the rotating shaft 601 continues to drive the sleeve 302 to rotate, under the action of the blocking plate 401, the first connecting rod 303 and the second connecting rod 304 prevent the sleeve 302 from rotating. At this time, the resistance of the sleeve 302 to rotate is greater than the elastic force of the third elastic member 607, so that the rotating shaft 601 drives the self-rotating block 606 to rotate along the self-rotating groove 605 against the elastic force of the third elastic member 607. At the same time, the ejector rod 508 slides from the annular groove of the guiding groove 507 into the arc groove. Due to the self-locking property of the worm 603 and worm wheel 602 structure, the cylinder 506 and the rotating shaft 601 can be in a stable position.

[0062] When the self-rotating block 606 slides from one end of the self-rotating groove 605 to the other end and the third elastic member 607 is compressed to the limit state, at this time, the cylinder 506 drives the adjusting plate 501 to slide towards the direction of the probe 2 through the guiding groove 507 and the ejector rod 508. And a relief groove 509 is formed on the adjusting plate 501 to facilitate the relief of one of the probes 2 in the guiding groove 307. Since the opening of the adjusting groove 502 formed on the adjusting plate 501 corresponds to the corresponding probe 2, and the distance between two adjacent adjusting grooves 502 at the same straight line is equal, and the distance near the end of the probe 2 is less than the distance at the end far from the probe 2. When the probe 2 is inserted into the corresponding adjusting groove 502, the adjusting groove 502 drives two of the probes 2 to move outwards along the guiding groove 307, and the other two probes 2 move outwards along the guiding groove 307. The probe 2 drives the slider 504 to slide along the sliding groove 503, and the second elastic member 505 is compressed. Since the distance between two adjacent adjusting grooves 502 is equal, the distances of the probes 2 after movement are also equidistant. And under the action of the adjusting groove 502, the spacing of the linearly arranged probes 2 can be adjusted equidistantly. When reducing the spacing of the probes 2, the above movement can be repeated in reverse. At this time, it is convenient for the probes 2 to better cover the detected wafer, thereby improving the accuracy of detecting the wafer resistance.

[0063] In summary, through the settings of the adjusting plate 501 and the adjusting groove 502, when multiple probes 2 are transformed from a positive-direction array into a linear array, the distance between the multiple probes 2 can be adjusted equidistantly through the adjusting groove 502 on the adjusting plate 501, so as to facilitate the equidistant adjustment of the distance between two adjacent probes 2. This not only facilitates the coverage of a large-area wafer by the multiple probes 2, but also facilitates the change of the spacing between adjacent probes 2. The resistivity of the wafer can be detected according to different spacings, and at the same time, it is convenient to better detect the resistivity of the wafer under different characteristics. This not only improves the detection efficiency and accuracy, but also applies to occasions where the probe spacing needs to be frequently changed, avoiding the situation of preparing a lot of probes 1, and meeting the requirements of various resistivity measurements.

[0064] Embodiment 3

[0065] This embodiment also provides a method for detecting the resistivity of a wafer, including the following steps:

[0066] S1: First, place the wafer to be measured on the base 10, and install the probe 1 on the mounting rack 12;

[0067] S2: Secondly, adjust the distance between the probe 1 and the wafer to be measured through the mounting rack 12, and the shape and spacing of the probe 2 can be adjusted through the adjusting mechanism 3 to meet different wafer measurements;

[0068] S3: Then, supply current through the power supply 9 so that the power supply 9 forms a loop through the wire 7, the probe 2 and the wafer to be measured, and the voltmeter 8, the wire 7 and the probe 2 form a loop through the wafer to be measured, and the voltage drop is measured through the voltmeter 8;

[0069] S4: Finally, the resistivity of the wafer to be measured is calculated through the applied current, the voltage drop measured by the voltmeter 8, and the distance between the probes 2 applying the current by a formula, and multiple measurements are made to determine the average value to reduce the detection error.

[0070] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. What is described in the above embodiments and the specification only illustrates the principle of the present invention. Without departing from the spirit and scope of the present invention, the present invention will have various changes and improvements, and these changes and improvements all fall within the scope of the present invention claimed. The scope of protection claimed by the present invention is defined by the appended claims and their equivalents.

Claims

1. A wafer resistivity detection device, comprising a probe (1) and a measuring instrument (101), wherein the lower end of the probe (1) is provided with four equally spaced probes (2), characterized in that: Also includes: An adjustment mechanism (3), the adjustment mechanism (3) comprising a receiving groove (301) provided in the probe (1), a sleeve (302) being rotatably connected in the receiving groove (301), a first connecting rod (303) close to the probe (2) being fixedly connected to the sleeve (302), a second connecting rod (304) away from the probe (2) being rotatably connected to the sleeve (302), both ends of the first connecting rod (303) and the second connecting rod (304) being hingedly connected to swing rods (305), a free end of each swing rod (305) being hingedly connected to a support rod (306), the support rod (306) being slidably connected to the probe (1), and the probe (2) being slidably connected to the corresponding support rod (306); a transformation mechanism (4), the transformation mechanism (4) being arranged in the accommodating groove (301) and being used for adjusting the first connecting rod (303) and the second connecting rod (304) to be in a parallel state or a staggered state; A fine-tuning mechanism (5), the fine-tuning mechanism (5) being arranged in the probe (1) and used for adjusting the distance between the plurality of probes (2); A locking mechanism (6), the locking mechanism (6) being arranged in the accommodating groove (301) and being used to lock the rotation of the sleeve (302); The adjustment mechanism (3) further comprises a guide groove (307) formed on the probe (1) and connected to the receiving groove (301), the support rod (306) being located in the guide groove (307), a steering block (308) being rotatably connected to the support rod (306), and the steering block (308) being hingedly connected to the corresponding free end of the swing rod (305); The conversion mechanism (4) comprises two blocking plates (401) fixedly connected to the inner wall of the accommodating groove (301), and the opposing surfaces of the two blocking plates (401) are both capable of contacting the second connecting rod (304). A buffer groove (402) is provided on the circumferential side of the sleeve (302), and a buffer block (403) is slidably connected in the buffer groove (402). The buffer block (403) is fixedly connected to the second connecting rod (304). The sleeve (302) is provided with a first elastic member ( The first connecting rod (303) and the second connecting rod (304) are connected to the buffer block (403); when the buffer block (403) squeezes the first elastic member (404) and contacts one end of the buffer groove (402), the first connecting rod (303) and the second connecting rod (304) are in a parallel state; when the buffer block (403) no longer squeezes the first elastic member (404) and contacts the other end of the buffer groove (402), the first connecting rod (303) and the second connecting rod (304) are in a staggered distribution state.

2. The resistivity detection device for a wafer according to claim 1, characterized in that: The fine adjustment mechanism (5) comprises an adjustment plate (501) slidably connected to the probe (1), the adjustment plate (501) is provided with a plurality of adjustment slots (502) corresponding to the probes (2), the adjustment slots (502) are in an inclined state, and the distance between two adjacent adjustment slots (502) in the same straight line is equal, and the probe (2) can extend into the corresponding adjustment slot (502), and the support rod (306) is provided with a slide slot (503) at one end close to the probe (2), a slider (504) is slidably connected in the slide slot (503), the slider (504) is fixedly connected to the corresponding probe (2), and the slider (504) is connected to the slide slot (503) via a second elastic member (505).

3. The resistivity detection device for a wafer according to claim 2, characterized in that: A cylinder (506) is rotatably connected in the receiving groove (301), and a guide groove (507) is provided on the cylinder (506). A push rod (508) is fixedly connected to a side of the adjustment plate (501) close to the cylinder (506), and a free end of the push rod (508) extends into the guide groove (507). A clearance groove (509) is provided on the adjustment plate (501), and one of the probes (2) can slide in the clearance groove (509).

4. The resistivity detection device for a wafer according to claim 3, characterized in that: The locking mechanism (6) comprises a rotating shaft (601) rotatably connected to the receiving groove (301), the rotating shaft (601) being rotatably connected to the sleeve (302), a worm wheel (602) being fixedly connected to the rotating shaft (601), a worm (603) meshing with the worm wheel (602) being rotatably connected in the receiving groove (301), and one end of the worm (603) extending out of the probe (1) and being fixedly connected to a knob (604).

5. The resistivity detection device for a wafer according to claim 4, characterized in that: The cylinder (506) is coaxially fixedly connected to the worm (603); a rotation groove (605) is provided on the inner edge surface of the sleeve (302); a rotation block (606) is slidably connected in the rotation groove (605); the rotation block (606) and the rotation groove (605) are connected via a third elastic member (607); when the rotation block (606) contacts one end of the rotation groove (605), the position of the adjustment plate (501) remains unchanged; when the rotation block (606) slides to the other end of the rotation groove (605), the adjustment plate (501) slides in the direction of the probe (2).

6. The resistivity detection device for a wafer according to claim 5, characterized in that: The two probes (2) on the first connecting rod (303) can be located between the two probes (2) on the second connecting rod (304), and the probes (2) are both connected to wires (7). A voltmeter (8) is electrically connected between the two wires (7) on the first connecting rod (303), and the two wires (7) on the second connecting rod (304) are electrically connected via a power supply (9).

7. The resistivity detection device for a wafer according to claim 6, characterized in that: The voltmeter (8) and the power supply (9) are both located in the measuring instrument (101). A base (10) is provided at the upper end of the measuring instrument (101). The base (10) is slidably connected to a mounting frame (12) via a guide rod (11). The probe (1) can be inserted into the mounting frame (12).

8. A method for detecting resistivity of a wafer, wherein the method uses the resistivity detection device for a wafer as claimed in claim 7 to detect the resistivity of the wafer, wherein: The following steps are involved: S1: firstly placing a wafer to be tested on the base (10), and mounting the probe (1) on the mounting frame (12); S2: Secondly, the distance between the probe (1) and the wafer to be measured is adjusted by the mounting frame (12), and the shape and spacing of the probes (2) can be adjusted by the adjustment mechanism (3) to meet the requirements of different wafer measurements; S3: Then, the power supply (9) provides current, so that the power supply (9) forms a loop through the wire (7), the probe (2) and the wafer to be tested, and the voltmeter (8), the wire (7) and the probe (2) form a loop through the wafer to be tested, and the voltage drop is measured by the voltmeter (8); S4: Finally, the resistivity of the wafer to be tested is calculated by a formula based on the applied current, the voltage drop measured by the voltmeter (8), and the distance between the probes (2) applying the current, and the average value is determined by multiple measurements to reduce the detection error.

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