Machine horizontal grid calibration method, device, overlay machine and storage medium

Abstract

The present application relates to the field of machine grid calibration, and discloses a machine horizontal grid calibration method, device, overprinter and storage medium. The method is applied to the overprinter, including obtaining a separate field pattern formed by the machine using a horizontal grid calibration mask for exposure; the horizontal grid calibration mask includes multiple overprint marks; obtaining a combined field pattern formed by the machine using the horizontal grid calibration mask for multiple exposures, the combined field pattern including multiple overprint mark groups; determining a first grid error at the machine measurement end according to an error value between an actual position of the overprint mark in the field pattern and a nominal position of a corresponding overprint mark on the horizontal grid calibration mask; determining an overprint difference between an inner overprint mark and an outer overprint mark in the overprint mark group in the combined field pattern to obtain a second grid error at the exposure end; sending the first grid error and the second grid error to the machine to realize horizontal grid calibration without occupying machine time.

Description

Technical Field

[0001] The present application relates to the field of machine grid calibration, and in particular to a machine horizontal grid calibration method, device, overlay machine and computer-readable storage medium. Background Art

[0002] Currently, the positioning of the machine stage in the photolithography process mainly uses a plane grating positioning system to achieve nanometer-level control of the workpiece stage length. However, grid errors can be caused by installation errors, splicing errors, and inherent defects of the plane grating.

[0003] Partial compensation for grid errors can be achieved through horizontal calibration of the grating. Currently, the main process for horizontal grid precision calibration includes exposing alignment marks on the machine, then measuring all alignment marks using the machine's built-in alignment system, and then calculating using the machine's built-in model to obtain the machine constants for high-density arrays (e.g., 400x400) on the measurement side (M-Side) and exposure side (E-Side), respectively, to achieve horizontal grid calibration. The current calibration method has the following drawbacks: First, due to the large number of alignment marks (over 20,000), measuring all alignment marks using the machine's built-in alignment system is time-consuming and occupies an excessive amount of machine time, approximately 10 to 20 hours. Second, due to the long-term continuous measurement of the machine, the reliability requirements of the machine's alignment system are very high. Third, using the machine's built-in model for calculations makes it difficult to upgrade and iterate the analysis model.

[0004] Therefore, how to solve the above technical problems should be the focus of those skilled in the art. Summary of the Invention

[0005] The purpose of this application is to provide a method, device, engraving machine and computer-readable storage medium for horizontal grid calibration of a machine, so as to reduce the reliability requirements of the machine alignment system when the machine's measuring machine is not occupied during calibration, and avoid dependence on the machine's own model.

[0006] To solve the above technical problems, the present application provides a method for calibrating a horizontal grid of a machine platform, which is applied to an overlay machine, comprising:

[0007] Obtaining a separate field pattern formed by exposing a horizontal grid calibration mask using a machine; the horizontal grid calibration mask includes a plurality of overlay marks;

[0008] Obtaining a combined field pattern formed by multiple exposures using the horizontal grid calibration mask on the machine, the combined field pattern comprising a plurality of overlay mark groups; each of the overlay mark groups comprising an inner overlay mark and an outer overlay mark, the inner overlay mark and the outer overlay mark being formed by the overlay marks in different field patterns;

[0009] determining a first grid error at a measuring end of the machine according to an error between an actual position of an overprint mark in the field pattern and a nominal position of a corresponding overprint mark on the horizontal grid calibration reticle;

[0010] determining an overlay difference between the inner overlay mark and the outer overlay mark in each overlay mark group in the combined field pattern to obtain a second grid error at an exposure end of the machine;

[0011] The first grid error and the second grid error are sent to the machine platform, so that the machine platform can achieve horizontal grid calibration.

[0012] Optionally, sending the first grid error and the second grid error to the machine includes:

[0013] Arranging the first grid error and the second grid error to form a grid array;

[0014] The grid array is sent to the tool.

[0015] Optionally, determining the first grid error of the measuring end of the machine according to an error value between an actual position of an overlay mark in the field pattern and a nominal position of a corresponding overlay mark on the horizontal grid calibration mask includes:

[0016] Determining an error value between an actual position of each of the overlay marks in the field pattern and a nominal position of the corresponding overlay mark on the horizontal grid calibration reticle;

[0017] The grid error introduced by the measurement end at each of the marks is determined by the relationship between the error value between the actual position of each of the overlay marks in the field pattern and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, the exposure end error, and the measurement end error, and the error value, thereby obtaining the first grid error.

[0018] Optionally, the relationship between the error value between the actual position of the overlay mark in the field pattern and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, the exposure end error, and the measurement end error is:

[0019] dx i =dx i (meas)+dx(exp);

[0020] dy i =dy i (meas)+dy(exp);

[0021] Where dx idx is the error in the x direction between the actual position of the overlay mark i and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, i (meas) is the error generated by the measurement end in the x direction at the overlay mark i, dx(exp) is the error generated by the exposure end, and dy i is the error in the y direction between the actual position of the overlay mark i and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, dy i (meas) is the error generated by the measuring end in the y direction at the overlay mark i.

[0022] Optionally, the plurality of overlay marks include any one or any combination of a Bar-in-Bar mark, an AIM mark, and a uDBO mark.

[0023] Optionally, before obtaining a combined field pattern formed by multiple exposures using the horizontal grid calibration mask on the machine, wherein the combined field pattern includes a plurality of overlay mark groups, the method further includes:

[0024] The machine uses the horizontal grid calibration mask to perform exposure to form a center field pattern;

[0025] The workpiece stage of the mobile machine is exposed using the horizontal grid calibration mask to form adjacent field patterns around the central field pattern; the adjacent field patterns and the central field pattern have overlapping overlay nesting areas, and the overlay nesting areas include multiple overlay mark groups.

[0026] The present application also provides a machine horizontal grid calibration device, comprising:

[0027] A first obtaining module is used to obtain a separate field pattern formed by exposing a horizontal grid calibration mask on a machine; the horizontal grid calibration mask includes a plurality of overlay marks;

[0028] a second obtaining module, configured to obtain a combined field pattern formed by multiple exposures performed by the machine using the horizontal grid calibration mask, the combined field pattern comprising a plurality of overlay mark groups; each of the overlay mark groups comprising an inner overlay mark and an outer overlay mark, the inner overlay mark and the outer overlay mark being formed by the overlay marks in different field patterns;

[0029] a first determining module, configured to determine a first grid error of a measuring end of the machine according to an error value between an actual position of an overlay mark in the field pattern and a nominal position of a corresponding overlay mark on the horizontal grid calibration mask;

[0030] a second determining module, configured to determine an overlay difference between the inner overlay mark and the outer overlay mark in each overlay mark group in the combined field pattern, to obtain a second grid error at an exposure end of the machine;

[0031] The sending module is used to send the first grid error and the second grid error to the machine, so that the machine can achieve horizontal grid calibration.

[0032] Optionally, the first determining module includes:

[0033] a first determining unit, configured to determine an error value between an actual position of each of the overlay marks in the field pattern and a nominal position of the corresponding overlay mark on the horizontal grid calibration mask;

[0034] The second determination unit is used to determine the grid error introduced by the measurement end at each of the marks through the relationship between the error value between the actual position of each of the overlay marks in the field pattern and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, the exposure end error, and the measurement end error, and obtain the first grid error.

[0035] The present application also provides an overlay engraving machine, comprising:

[0036] memory for storing computer programs;

[0037] A processor is configured to implement any one of the steps of the above-mentioned method for calibrating the horizontal grid of a machine platform when executing the computer program.

[0038] The present application also provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the steps of any one of the above-mentioned methods for calibrating the horizontal grid of the machine are implemented.

[0039] A method for calibrating a horizontal grid of a machine provided in the present application is applied to an overlay machine, comprising: obtaining a separate field pattern formed by exposing the machine using a horizontal grid calibration mask; the horizontal grid calibration mask includes a plurality of overlay marks; obtaining a combined field pattern formed by multiple exposures of the machine using the horizontal grid calibration mask, the combined field pattern including a plurality of overlay mark groups; each of the overlay mark groups including an inner overlay mark and an outer overlay mark, the inner overlay mark and the outer overlay mark being formed by the overlay marks in different field patterns; determining a first grid error at a measuring end of the machine according to an error value between an actual position of the overlay mark in the field pattern and a nominal position of the corresponding overlay mark on the horizontal grid calibration mask; determining an overlay difference between the inner overlay mark and the outer overlay mark in each of the overlay mark groups in the combined field pattern to obtain a second grid error at an exposure end of the machine; and sending the first grid error and the second grid error to the machine to enable the machine to achieve horizontal grid calibration.

[0040] It can be seen that in the horizontal grid calibration method of the machine in this application, after the machine performs exposure processing on the horizontal grid calibration mask to form a field pattern and a combined field pattern, the overprinter can obtain the first grid error at the machine measurement end through the error between the actual position of the overprint mark in the field pattern and the nominal position of the corresponding overprint mark on the horizontal grid calibration mask, and the second grid error at the machine exposure end can be obtained through the difference between the inner overprint mark and the outer overprint mark in the overprint mark group. In other words, the error measurement process is performed on the overprinter, does not occupy the machine's measurement time, and is not affected by the reliability of the machine's alignment system, thereby reducing the requirements for the reliability of the machine's alignment system. In addition, since there is no need to use the machine for error measurement and analysis calculation, dependence on the machine's own model is avoided.

[0041] In addition, the present application also provides a device, an engraving machine and a computer-readable storage medium having the above advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0043] Figure 1 A flowchart of a method for calibrating a horizontal grid of a machine provided in an embodiment of the present application;

[0044] Figure 2A schematic diagram of a horizontal grid calibration mask provided in an embodiment of the present application;

[0045] Figure 3 A schematic diagram of splicing and nesting a central field and adjacent fields provided in an embodiment of the present application;

[0046] Figures 4 to 6 A schematic diagram of an inner and outer nested combination of an overlay mark provided in an embodiment of the present application;

[0047] Figure 7 A comparison chart of the nominal and actual positions of the markers;

[0048] Figure 8 Schematic diagram of the distribution of grid arrays and wafers on the machine;

[0049] Figure 9 This is a comparison chart before and after the machine grid calibration;

[0050] Figure 10 A structural block diagram of a machine horizontal grid calibration device provided in an embodiment of the present application;

[0051] Figure 11 A structural block diagram of an overlay machine provided in an embodiment of the present application. DETAILED DESCRIPTION

[0052] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. Obviously, the embodiments described are only a part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making any creative efforts are within the scope of protection of the present application.

[0053] As described in the background technology section, when calibrating the horizontal grid of a machine in the current photolithography process, data measurement and analysis are performed on the machine itself, which takes up too much machine time and places high demands on the reliability of the machine's alignment system. At the same time, it relies heavily on the machine's own model.

[0054] In view of this, this application provides a machine horizontal grid calibration method, which is applied to the engraving machine, please refer to Figure 1 ,include:

[0055] Step S101: obtaining a separate field pattern formed by exposure using a horizontal grid calibration mask on a machine; the horizontal grid calibration mask includes a plurality of overlay marks.

[0056] The plurality of overlay marks include but are not limited to any one or any combination of Bar-in-Bar marks, AIM (Advanced Image Metrology) marks, and uDBO (Micro Diffraction Based Overlay) marks.

[0057] Before obtaining the individual field patterns formed by the horizontal grid calibration mask used by the tool, a universal overlay mark is placed on the horizontal grid calibration mask, and then the tool uses the horizontal grid calibration mask to expose the wafer to form the field pattern. Figure 2 As shown, Figure 2 Includes 8 overlay marks 1, Figure 2 The middle overlay mark 1 is shown as a Bar-in-Bar mark.

[0058] It can be understood that the schematic diagram of the field pattern is similar to the schematic diagram of the horizontal grid calibration reticle, and the field pattern includes marks corresponding to the overlay marks on the horizontal grid calibration reticle.

[0059] It should be noted that the separate field pattern in this step is also formed during the overlay process.

[0060] Step S102: obtaining a combined field pattern formed by multiple exposures of the machine using the horizontal grid calibration mask, wherein the combined field pattern includes a plurality of overlay mark groups;

[0061] Each of the overlay mark groups includes an inner overlay mark and an outer overlay mark, and the inner overlay mark and the outer overlay mark are formed by the overlay marks in different field patterns.

[0062] By translating the workpiece stage in the x and y directions, the overlay marks in adjacent field patterns are nested and combined with the overlay marks in the center field pattern to form an overlay mark group. The combined field pattern is formed by combining the center field pattern and the overlapping area between the center field pattern and the adjacent field patterns.

[0063] The schematic diagram of the central field pattern and the adjacent field pattern being spliced ​​and nested is as follows: Figure 3 As shown, each overlay mark group 2 in the combined field pattern 3 includes an inner overlay mark and an outer overlay mark. Figure 3The middle overlay mark group 2 is shown as bar-in-bar marks. A horizontal grid calibration reticle has two outer overlay marks on the left side and two inner overlay marks on the right side. After exposure, two outer overlay marks are formed on the left side of the center field pattern, and two inner overlay marks are formed on the right side. The workpiece stage of the machine is then translated, for example, to the right, and then exposure is performed. This causes the two outer overlay marks on the left side of the right adjacent field pattern to nest outside the two inner overlay marks on the right side of the center field pattern, forming a bar-in-bar overlay mark group. Similarly, if exposure is performed to the left, the two inner overlay marks on the right side of the left adjacent field pattern to nest inside the two outer overlay marks on the left side of the center field pattern, forming a bar-in-bar overlay mark group. Similarly, a horizontal grid calibration reticle has two outer overlay marks at the bottom and two inner overlay marks at the top. After exposure, two outer overlay marks are formed at the bottom and two inner overlay marks at the top of the center field pattern. Exposure is also performed by moving the workpiece stage up and down, forming an overlay mark group. Among them, left and right movement is movement in the x direction, and up and down movement is movement in the y direction. When the inner engraved mark and the outer engraved mark are both Bar-in-Bar marks, the schematic diagram of the nested combination is as follows Figure 4 As shown; when the inner engraved mark and the outer engraved mark are both AIM marks, the schematic diagram of the nested combination is as shown Figure 5 As shown; when the inner engraved mark and the outer engraved mark are both uDBO marks, the schematic diagram of the nested combination is as follows Figure 6 shown.

[0064] As an implementation method, before obtaining a combined field pattern formed by multiple exposures using the horizontal grid calibration mask on the machine, the combined field pattern includes multiple overlay mark groups, further comprising:

[0065] The machine uses the horizontal grid calibration mask to perform exposure to form a center field pattern;

[0066] The workpiece stage of the mobile machine is exposed using the horizontal grid calibration mask to form adjacent field patterns around the central field pattern; the adjacent field patterns and the central field pattern have overlapping overlay nesting areas, and the overlay nesting areas include multiple overlay mark groups.

[0067] The horizontal grid calibration mask used in the overlay in this application is one.

[0068] Step S103 : determining a first grid error of the measuring end of the machine according to an error value between an actual position of an overlay mark in the field pattern and a nominal position of the corresponding overlay mark on the horizontal grid calibration mask.

[0069] The overlay marks in the field pattern are formed by exposing the mask using a horizontal grid alignment technique.

[0070] The nominal position of the overlay mark refers to the position of the overlay mark on the horizontal grid calibration mask.

[0071] As an implementation method, determining the first grid error at the measurement end of the tool according to an error value between an actual position of an overlay mark in the field pattern and a nominal position of a corresponding overlay mark on the horizontal grid calibration mask includes:

[0072] Step S1031: determining an error value between an actual position of each of the overlay marks in the field pattern and a nominal position of the corresponding overlay mark on the horizontal grid calibration mask.

[0073] Please refer to Figure 7 All overlay marks in a field pattern are formed in one exposure and are marks of the same exposure field. Figure 7 In the figure, taking the nominal position of the overlay mark in the dotted box and the actual position of the overlay mark formed on the wafer as an example, the difference between the center point of the actual position of the overlay mark and the center point of the nominal position can be used to obtain the error value between the overlay mark in the field pattern and the corresponding overlay mark on the horizontal grid calibration mask. Each error value includes the error value in the x-direction and the error value in the y-direction. The calculation formula for the error value in the x-direction and the error value in the y-direction is:

[0074] dx i =dx i实际 -dx i名义 (1)

[0075] dy i =dy i实际 -dy i名义 (2)

[0076] Where dx i实际 is the actual position value of the overlay mark i in the field pattern in the x direction, dx i名义 is the nominal position value of the overlay mark in the x direction on the horizontal grid calibration mask corresponding to the overlay mark i in the field pattern, dx i dy is the error in the x direction between the actual position of the overlay mark i in the field pattern and the nominal position of the overlay mark on the corresponding horizontal grid calibration mask; i实际 is the actual position value of the overlay mark i in the field pattern in the y direction, dy i名义 is the nominal position value of the overlay mark in the y direction on the horizontal grid calibration mask corresponding to the overlay mark i in the field pattern, dy i is the error value in the y direction between the overlay mark i in the field pattern and the corresponding overlay mark on the horizontal grid calibration mask.

[0077] Step S1032: Determine the grid error introduced by the measuring end at each of the marks through the relationship between the error value between the actual position of each of the overlay marks in the field pattern and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, the exposure end error, and the measurement end error, and obtain the first grid error.

[0078] The relationship between the error between the actual position of the overlay mark in the field pattern and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, the exposure end error, and the measurement end error is:

[0079] dx i =dx i (meas)+dx(exp) (3)

[0080] dy i =dy i (meas)+dy(exp) (4)

[0081] Where dx i dx is the error in the x direction between the actual position of the overlay mark i and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, i (meas) is the error generated by the measurement end in the x direction at the overlay mark i, dx(exp) is the error generated by the exposure end, and dy i is the error in the y direction between the actual position of the overlay mark i and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, dy i (meas) is the error generated by the measuring end in the y direction at the overlay mark i.

[0082] Similarly, for other markers j in the same field pattern, we can obtain:

[0083] dx j =dx j (meas)+dx(exp) (5)

[0084] dy j =dy j (meas)+dy(exp) (6)

[0085] Where dx j is the error in the x direction between the actual position of the overlay mark j and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, dx j (meas) is the error generated by the measurement end in the x direction at the overlay mark j, dx(exp) is the error generated by the exposure end, and dy jis the error in the y direction between the actual position of the overlay mark j and the nominal position of the overlay mark on the corresponding horizontal grid calibration mask, dy j (meas) is the error generated by the measuring end in the y direction at the overlay mark j.

[0086] For different overlay marks in the same field pattern, the error generated at the exposure end is the same at the same workpiece stage position at the exposure end. Therefore, the same exposure end error is used in formulas (3) to (6).

[0087] Subtracting the error values ​​of different overlay marks yields:

[0088] dx i -dx j =dx i (meas)-dx j (meas) (7)

[0089] dy i -dy j =dy i (meas)-dy j (meas) (8)

[0090] Among them, dx i and dy i The specific values ​​can be obtained by formulas (1) and (2). Similarly, the dx of other overlay marks j is j and dy j Specific values ​​can also be obtained. By combining the equations between multiple overlay marks, the grid error at each overlay mark can be obtained. For example, at overlay mark i, the grid error includes the error dx generated by the measuring end in the x direction at overlay mark i. i (meas) and the error dy generated by the measuring end in the y direction at the overlay mark i i (meas); At the overlay mark j, the grid error includes the error dx generated by the measuring end in the x direction at the overlay mark j j (meas) and the error dy generated by the measuring end in the y direction at the overlay mark j j (meas).

[0091] The errors generated by all the overlay marks in the x-direction and the y-direction are obtained, that is, the first grid error is obtained.

[0092] Step S104: determining the overlay difference between the inner overlay mark and the outer overlay mark in each overlay mark group in the combined field pattern to obtain a second grid error of the exposure end of the machine.

[0093] For an overlay mark group, the measurement is performed on the overlay machine, and the grating on the measuring end of the machine is not used. Therefore, the grid on the measuring end of the machine has no effect and can be ruled out.

[0094] Please refer to Figure 3 For an overlay mark group, the measurement of the inner overlay mark and the outer overlay mark uses different grid areas on the exposure end, so the overlay error can fully reflect the grid error on the exposure end of the machine.

[0095] For one overlay mark group, the grid error generated by the exposure end is:

[0096] OVx m =dx m-i -dx m-o (9)

[0097] OVy m =dy m-i -dy m-o (10)

[0098] Where, OVx m is the overlay difference generated by the overlay mark group m in the x direction, dx m-i is the value of the inner overlay mark in the overlay mark group m in the x direction, dx m-o OVy is the value of the outer engraving mark in the overlay mark group m in the x direction, m is the overlay difference generated by the overlay mark group m in the y direction, dy m-i is the value of the inner overlay mark in the overlay mark group m in the y direction, dy m-o is the value of the outer overlay mark in the overlay mark group m in the y direction.

[0099] Step S105: sending the first grid error and the second grid error to the machine, so that the machine can achieve horizontal grid calibration.

[0100] As an implementation method, sending the first grid error and the second grid error to the machine includes:

[0101] Step S1051: Arrange the first grid error and the second grid error to form a grid array.

[0102] The size of the grid array is not limited in this application and can be set by the user. For example, the grid array can be 400×400 with a step size of 1 mm.

[0103] Step S1052: Send the grid array to the machine.

[0104] The machine receives the grid array, and the distribution diagram of the grid array 4 and the wafer 5 on the machine is shown as follows: Figure 8As shown. The comparison of the machine grid before and after calibration is shown as follows. Figure 9 shown.

[0105] In this embodiment, the machine horizontal grid calibration method is implemented. After the machine exposes a horizontal grid calibration mask to form a field pattern and a combined field pattern, the overprinter can obtain the first grid error at the machine's measurement end by measuring the error between the actual position of the overprint mark in the field pattern and the nominal position of the corresponding overprint mark on the horizontal grid calibration mask. The second grid error at the machine's exposure end can be obtained by measuring the difference between the inner overprint mark and the outer overprint mark in the overprint mark group. That is, the error measurement process is performed on the overprinter, which does not occupy the machine's measurement time and is not affected by the reliability of the machine's alignment system, thereby reducing the reliability requirements for the machine's alignment system. Furthermore, since the machine does not need to be used for error measurement and analysis, it avoids dependence on the machine's built-in model, making offline data analysis model upgrades and iterations easier than using the machine's built-in fixed model.

[0106] The following is an introduction to the machine horizontal grid calibration device provided in an embodiment of the present application. The machine horizontal grid calibration device described below and the machine horizontal grid calibration method described above can be referenced to each other.

[0107] Figure 10 This is a structural diagram of the horizontal grid calibration device provided by the embodiment of the present application, refer to Figure 10 The machine horizontal grid calibration device may include:

[0108] The first obtaining module 100 is used to obtain a separate field pattern formed by exposure using a horizontal grid calibration mask on a machine; the horizontal grid calibration mask includes a plurality of overlay marks;

[0109] A second obtaining module 200 is configured to obtain a combined field pattern formed by performing multiple exposures on the machine using the horizontal grid calibration mask, wherein the combined field pattern includes a plurality of overlay mark groups; each of the overlay mark groups includes an inner overlay mark and an outer overlay mark, wherein the inner overlay mark and the outer overlay mark are formed by the overlay marks in different field patterns;

[0110] A first determining module 300 is configured to determine a first grid error of a measuring end of the tool according to an error value between an actual position of an overlay mark in the field pattern and a nominal position of a corresponding overlay mark on the horizontal grid calibration reticle;

[0111] A second determining module 400 is configured to determine an overlay difference between the inner overlay mark and the outer overlay mark in each overlay mark group in the combined field pattern, to obtain a second grid error at an exposure end of the machine;

[0112] The sending module 500 is configured to send the first grid error and the second grid error to the machine, so that the machine can achieve horizontal grid calibration.

[0113] The machine horizontal grid calibration device of this embodiment is used to implement the aforementioned machine horizontal grid calibration method. Therefore, the specific implementation method of the machine horizontal grid calibration device can be seen in the embodiment part of the machine horizontal grid calibration method in the previous text. For example, the first acquisition module 100, the second acquisition module 200, the first determination module 300, the second determination module 400, and the sending module 500 are respectively used to implement steps S101, S102, S103, S104 and S105 in the above-mentioned machine horizontal grid calibration method. Therefore, its specific implementation method can refer to the description of the corresponding embodiments of each part, and will not be repeated here.

[0114] Optionally, the sending module includes:

[0115] an arranging unit, configured to arrange the first grid error and the second grid error to form a grid array;

[0116] A sending unit is used to send the grid array to the machine.

[0117] Optionally, the first determining module includes:

[0118] a first determining unit, configured to determine an error value between an actual position of each of the overlay marks in the field pattern and a nominal position of the corresponding overlay mark on the horizontal grid calibration mask;

[0119] The second determination unit is used to determine the grid error introduced by the measurement end at each of the marks through the relationship between the error value between the actual position of each of the overlay marks in the field pattern and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, the exposure end error, and the measurement end error, and obtain the first grid error.

[0120] The following is an introduction to the overlay machine provided in the embodiment of the present application. The overlay machine described below and the machine horizontal grid calibration method described above can be referenced to each other.

[0121] Please refer to Figure 11 , the present application also provides an overlay engraving machine, comprising:

[0122] Memory 11, for storing computer programs;

[0123] The processor 12 is configured to implement the steps of the machine horizontal grid calibration method described in any one of the above embodiments when executing the computer program.

[0124] The computer-readable storage medium provided in the embodiments of the present application is introduced below. The computer-readable storage medium described below and the machine horizontal grid calibration method described above can be referenced to each other.

[0125] A computer-readable storage medium stores a computer program, which, when executed by a processor, implements the steps of the machine horizontal grid calibration method described in any of the above embodiments.

[0126] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from the other embodiments. Reference can be made to the descriptions of the identical or similar parts between the various embodiments. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and the relevant parts can be referred to the descriptions of the methods.

[0127] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the above description has generally described the components and steps of each example according to their functions. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0128] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be implemented directly using hardware, a software module executed by a processor, or a combination of the two. The software module may be placed in a random access memory (RAM), internal memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.

[0129] The above is a detailed introduction to the machine horizontal grid calibration method, device, overlay machine and computer-readable storage medium provided by the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.

Claims

1. A method for calibrating a horizontal grid of a machine, characterized in that: Applicable to overlay machines, including: Obtaining a separate field pattern formed by exposing a horizontal grid calibration mask using a machine; the horizontal grid calibration mask includes a plurality of overlay marks; Obtaining a combined field pattern formed by multiple exposures using the horizontal grid calibration mask on the machine, the combined field pattern comprising a plurality of overlay mark groups; each of the overlay mark groups comprising an inner overlay mark and an outer overlay mark, the inner overlay mark and the outer overlay mark being formed by the overlay marks in different field patterns; determining a first grid error at a measuring end of the machine according to an error between an actual position of an overprint mark in the field pattern and a nominal position of a corresponding overprint mark on the horizontal grid calibration reticle; determining an overlay difference between the inner overlay mark and the outer overlay mark in each overlay mark group in the combined field pattern to obtain a second grid error at an exposure end of the machine; The first grid error and the second grid error are sent to the machine platform, so that the machine platform can achieve horizontal grid calibration.

2. The machine horizontal grid calibration method according to claim 1, wherein: Sending the first grid error and the second grid error to the machine includes: Arranging the first grid error and the second grid error to form a grid array; The grid array is sent to the tool.

3. The machine horizontal grid calibration method according to claim 1, wherein: Determining a first grid error at a measurement end of the tool according to an error between an actual position of an overlay mark in the field pattern and a nominal position of a corresponding overlay mark on the horizontal grid calibration mask includes: Determining an error value between an actual position of each of the overlay marks in the field pattern and a nominal position of the corresponding overlay mark on the horizontal grid calibration reticle; The grid error introduced by the measurement end at each of the marks is determined by the relationship between the error value between the actual position of each of the overlay marks in the field pattern and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, the exposure end error, and the measurement end error, and the error value, thereby obtaining the first grid error.

4. The machine horizontal grid calibration method according to claim 3, wherein: The relationship between the error between the actual position of the overlay mark in the field pattern and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, the exposure end error, and the measurement end error is: dx i =dx i (meas)+dx(exp); of i =dy i (mean)+of(exp): Where dx i dx is the error in the x direction between the actual position of the overlay mark i and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, i (meas) is the error generated by the measurement end in the x direction at the overlay mark i, dx(exp) is the error generated by the exposure end, and dy i is the error in the y direction between the actual position of the overlay mark i and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, dy i (meas) is the error generated by the measuring end in the y direction at the overlay mark i.

5. The machine horizontal grid calibration method according to claim 1, wherein: The plurality of overlay marks include any one or any combination of Bar-in-Bar marks, AIM marks, and uDBO marks.

6. The machine horizontal grid calibration method according to claim 1, wherein: Before obtaining a combined field pattern formed by multiple exposures using the horizontal grid calibration mask on the machine, wherein the combined field pattern includes multiple overlay mark groups, the method further includes: The machine uses the horizontal grid calibration mask to perform exposure to form a center field pattern; The workpiece stage of the mobile machine is exposed using the horizontal grid calibration mask to form adjacent field patterns around the central field pattern; the adjacent field patterns and the central field pattern have overlapping overlay nesting areas, and the overlay nesting areas include multiple overlay mark groups.

7. A horizontal grid calibration device for a machine platform, characterized in that: include: The first acquisition module is used to obtain a separate field pattern formed by exposing the machine using a horizontal grid calibration mask; The horizontal grid calibration mask includes a plurality of overlay marks; a second obtaining module, configured to obtain a combined field pattern formed by multiple exposures performed by the machine using the horizontal grid calibration mask, the combined field pattern comprising a plurality of overlay mark groups; each of the overlay mark groups comprising an inner overlay mark and an outer overlay mark, the inner overlay mark and the outer overlay mark being formed by the overlay marks in different field patterns; a first determining module, configured to determine a first grid error of a measuring end of the machine according to an error value between an actual position of an overlay mark in the field pattern and a nominal position of a corresponding overlay mark on the horizontal grid calibration mask; a second determining module, configured to determine an overlay difference between the inner overlay mark and the outer overlay mark in each overlay mark group in the combined field pattern, to obtain a second grid error at an exposure end of the machine; The sending module is used to send the first grid error and the second grid error to the machine, so that the machine can achieve horizontal grid calibration.

8. The machine horizontal grid calibration device according to claim 7, characterized in that: The first determining module includes: a first determining unit, configured to determine an error value between an actual position of each of the overlay marks in the field pattern and a nominal position of the corresponding overlay mark on the horizontal grid calibration mask; The second determination unit is used to determine the grid error introduced by the measurement end at each of the marks through the relationship between the error value between the actual position of each of the overlay marks in the field pattern and the nominal position of the corresponding overlay mark on the horizontal grid calibration mask, the exposure end error, and the measurement end error, and obtain the first grid error.

9. An overlay engraving machine, characterized in that: include: memory for storing computer programs; A processor is configured to implement the steps of the machine horizontal grid calibration method according to any one of claims 1 to 5 when executing the computer program.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the machine horizontal grid calibration method according to any one of claims 1 to 5 are implemented.

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