Magnetron with more than three poles and PVD (Physical Vapor Deposition) magnetron sputtering equipment

Abstract

The invention provides a magnetron with more than three poles, which can improve the full-area etching property of a plane target under the condition that the magnetron does not move relative to the plane target. In addition, the invention also provides PVD (Physical Vapor Deposition) magnetron sputtering equipment with the magnetron. The magnetron with more than three poles is opposite to a back plate of a planar target for physical vapor deposition, at least two annular and closed magnetic poles are included in more than three magnetic poles, and the magnetic poles are sequentially nested in the same plane in a manner of forming a gap in the radial direction.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor substrate process technology, but is not limited to it, and in particular to a magnetron with more than three poles and a PVD magnetron sputtering device used for thin film deposition on semiconductor substrates. Background Art

[0002] In the semiconductor manufacturing process, there are multiple thin film deposition processes. Among these thin film deposition processes, magnetron sputtering is included. Magnetron sputtering technology is a type of physical vapor deposition (PVD) technology. Magnetron sputtering technology is used to prepare a variety of thin film materials such as metals, semiconductors, insulators, etc., and magnetron sputtering technology has the advantages of simple equipment, easy control, large thin film deposition area and strong adhesion.

[0003] In the past, in PVD magnetron sputtering equipment for semiconductor thin film deposition, in order to improve the utilization rate of the planar target, improve the full-area etching performance of the planar target, and improve the uniformity of the deposited film, the magnetron usually moves relative to the planar target. For example, the magnetron usually moves relative to the planar target in a rotating or scanning manner.

[0004] However, when the magnetron needs to sputter ferromagnetic materials such as nickel, it faces some problems. Specifically, since the magnetron is strongly attracted to the back plate of the ferromagnetic planar target by magnetic force, it is difficult to achieve mechanical movement of the magnetron, such as rotation and scanning. Without the movement of the magnetron relative to the planar target, it will be difficult for magnetron sputtering as a DC power supply to fully etch the surface of the planar target exposed to the plasma, which may cause particles and other problems.

[0005] In addition, in the design of a target gun for a small-area magnetron sputtering target (e.g., a planar target with a diameter less than 3 inches, i.e., 75 mm), full-area etching of the planar target can be achieved by optimizing the design of a stationary magnetron. However, as the size of the substrate on which the thin film is deposited increases, for example, when thin films are deposited on square semiconductor substrates in advanced packaging or wafers larger than 300 mm, a planar target with a larger area is required. As the area of ​​the planar target increases, to achieve full-area etching of the planar target, a single closed-loop magnetron with a size smaller than the planar target area is usually required to generate a rotational or scanning motion relative to the planar target. However, compared with a stationary magnetron, the design of a moving magnetron is much more complicated and the manufacturing cost is much higher.

[0006] The magnetron is generally arranged on the back of the PVD planar target back plate (or the combination of the planar target and the back plate). For example, in U.S. Patent No. 7,186,319, the first inventor of the present invention, YANG et al., disclosed a magnetron. Although the magnetic pole arrangement on the magnetron can have multiple loops, there is always only one closed loop in the end. In addition, multiple magnetrons can also be arranged behind the PVD planar target to improve and control the full-area etching of the planar target. For example, in U.S. Patent No. 7,767,064 and U.S. Patent No. 7,686,928, etc., a dual magnetron design is disclosed. In this case, each magnetron can generate a closed-loop plasma. At a certain moment or under a certain condition, only one magnetron of a closed loop is in an activated state and can generate plasma. In other words, all the magnetrons of the closed loop cannot be in an activated state at the same time. During the time when the power supply is applied to the planar target, the activation state of the magnetrons of each different closed loop is switched back and forth, and only the magnetron in the activated state can generate the corresponding closed loop plasma. How the activation states of the magnetrons of different closed loops are switched back and forth is entirely determined by the position of the magnetron or the changes in the characteristics of the magnetron and process conditions.

[0007] When the magnetron is located far outside the edge of the planar target, the magnetic field lines of the magnetron are tangent to the electrically grounded shield next to the dark space at the edge of the planar target, causing the electrons to rotate around the magnetic field lines and be lost too quickly, making it impossible for the plasma to be successfully ignited. Therefore, in order to achieve full-area etching of the planar target while meeting the process requirements, it is usually necessary to use more complex magnetrons with multiple different closed loops, and relative motion between the magnetron and the planar target is required. Summary of the invention

[0008] The present invention aims at one of the above technical problems and proposes a magnetron with more than three poles, which can improve the full-area etching performance of a planar target without relative movement of the magnetron relative to the planar target. In addition, the present invention also proposes a PVD magnetron sputtering device with such a magnetron.

[0009] According to the first aspect of the present invention, a magnetron with more than three poles is opposite to a back plate of a planar target for physical vapor deposition. Among the more than three magnetic poles, at least two of the magnetic poles are ring-shaped and closed, and the magnetic poles are nested in sequence in the same plane in a manner of forming gaps along the radial direction.

[0010] In some embodiments, the three or more magnetic poles include a solid first magnetic pole located at the center of the magnetron.

[0011] In some embodiments, the polarities of two adjacent magnetic poles are opposite, one is the N pole and the other is the S pole; and the ring-shaped and closed magnetic poles include: the nth magnetic pole and the n+1th magnetic pole, the n+1th magnetic pole is radially adjacent to the nth magnetic pole and is sleeved on the outer circumference of the nth magnetic pole, wherein n represents the serial number of the magnetic pole from the inside to the outside, and n is an integer greater than or equal to 2; a ring-shaped gap is formed between the n+1th magnetic pole and the nth magnetic pole.

[0012] In some embodiments, a ratio of a cross-sectional area between the magnetic pole radially adjacent to the first magnetic pole and located radially outside the first magnetic pole and the first magnetic pole is 0.8 to 8.0.

[0013] In some embodiments, a ratio of a cross-sectional area between the magnetic pole radially adjacent to the first magnetic pole and located radially outside the first magnetic pole and the first magnetic pole is 0.8 to 4.0.

[0014] In some embodiments, a ratio of a cross-sectional area between the n+1th magnetic pole and the nth magnetic pole adjacent thereto on the inner side in the radial direction is 0.8 to 3.0.

[0015] In some embodiments, a ratio of a cross-sectional area between the n+1th magnetic pole and the nth magnetic pole adjacent thereto on the inner side in the radial direction is 1.0 to 2.0.

[0016] In some embodiments, the width of the gap is greater than 0 mm and less than 60 mm.

[0017] According to the second aspect of the present invention, the PVD magnetron sputtering equipment includes: a vacuum chamber; a planar target, arranged in the vacuum chamber and located above the vacuum chamber; a substrate stage, arranged in the vacuum chamber and located below the planar target; any one of the above magnetrons with more than three poles, arranged on the back of the planar target and opposite to the back plate of the planar target in the up and down direction.

[0018] In some embodiments, the ratio of the width of the gap of the magnetron having three or more poles to the thickness of the planar target is 0.2:1 to 3:1.

[0019] According to the first aspect of the present invention, the magnetron having three or more poles can improve the full-area etching performance of the planar target without relative movement of the magnetron with respect to the planar target.

[0020] According to the PVD magnetron sputtering apparatus of the second aspect of the present invention, it is possible to improve the full-area etching performance of the planar target without relative movement of the magnetron with respect to the planar target. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a simplified schematic diagram of one implementation of a PVD magnetron sputtering device.

[0022] Figure 2 It is a schematic diagram of one embodiment of a bipolar magnetron, namely a balanced bipolar magnetron.

[0023] Figure 3 It is a schematic diagram of an implementation of a bipolar magnetron, namely a strong internal magnetic bipolar magnetron.

[0024] Figure 4 It is a schematic diagram of an implementation of a bipolar magnetron, namely a strong external magnetic bipolar magnetron.

[0025] Figure 5 Schematic diagram showing the surface etching of a bipolar magnetron and a corresponding planar target.

[0026] Figure 6 Schematic diagram showing the etching of a planar target by a bipolar magnetron, wherein (a) shows the etching before the size of the first magnetic pole is reduced; and (b) shows the etching after the size of the first magnetic pole is reduced.

[0027] Figure 7 It is a schematic diagram of a three-pole magnetron which is one embodiment of the magnetron having three or more poles of the present invention.

[0028] Figure 8 1 is a schematic diagram of a quadrupole magnetron which is one embodiment of a magnetron having three or more poles according to an embodiment.

[0029] Fig. 9 yes Figure 8 Schematic diagram of a magnetron.

[0030] Fig.10 It is a schematic diagram of another embodiment of the magnetron with more than three poles of the present invention, namely, a quadrupole magnetron.

[0031] Fig.11 This is a graph showing the relationship between the unbalance ratio of a magnetron having three or more poles and the number of poles of the magnetron.

[0032] Description of Reference Numerals 20: PVD magnetron sputtering equipment; 22: Magnetron with more than three poles; 22a: Tripolar magnetron; 22b: Quadrupole magnetron; 22c: Oval magnetron; 24: vacuum chamber; 26: plane target; 28: substrate stage; 30: substrate; 32: flow valve; 34: Plasma; 36: bipolar magnetron; 36a: balanced bipolar magnetron; 36b: strong internal magnetic bipolar magnetron; 36c: strong external magnetic bipolar magnetron; 38: first magnetic pole; 40: second magnetic pole; 42: first gap; 44: center line; 46: Position of the strongest horizontal component of the magnetic field; 48: first magnetic pole periphery; 50: inner circumference of the second magnetic pole; 52: outer periphery of the second magnetic pole; 54: Plane target edge 56: Etching boundary of target edge; 58: unetched area in the center of the target; 60: Boundary of the unetched area in the center of the target; 62: Boundary of tiny unetched area; 64: third magnetic pole; 66: Second gap; 68: fourth magnetic pole; 70: The third gap. DETAILED DESCRIPTION

[0033] Embodiments of the present embodiment are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present embodiment, and should not be construed as limiting the present embodiment.

[0034] In the description of this embodiment, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing this embodiment and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on this embodiment.

[0035] In the description of this embodiment, the meaning of "a plurality" is more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, and "above", "below", "within", etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0036] In the description of this embodiment, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in this embodiment based on the specific content of the technical solution.

[0037] For ease of understanding, refer to Figures 1 to 11 , and mainly refer to Figure 1 Before explaining the magnetron, an application scenario of the magnetron, namely a PVD magnetron sputtering device 20 for a semiconductor substrate, is first explained.

[0038] like Figure 1 As shown, the PVD magnetron sputtering device 20 for semiconductor substrates includes a magnetron ( Figure 1 2 shows a magnetron 22 with more than three poles, a vacuum chamber 24, a planar target 26, a planar target mounting device (such as a back plate, not marked with a figure) and a substrate stage 28 of this embodiment. Among them, the planar target 26 is arranged in the vacuum chamber 24 and is located above the vacuum chamber 24. The substrate stage 28 is arranged in the vacuum chamber 24 and is located below the planar target 26. The magnetron (such as a magnetron 22 with more than three poles) is arranged on the back of the vacuum chamber 24 and is opposite to the planar target 26 in the up and down direction. The substrate stage 28 is used to carry the substrate 30 to be coated. The front side of the planar target 26 faces the substrate stage 28. The magnetron is arranged on the back side of the planar target 26. In some PVD magnetron sputtering equipment 20, the magnetron can be driven by a driving device (not shown) to move relative to the planar target 26. Furthermore, in some PVD magnetron sputtering apparatuses 20 , for example, when the planar target 26 is made of a ferromagnetic material such as nickel, the magnetron is difficult to move relative to the planar target 26 and becomes a stationary magnetron relative to the planar target 26 .

[0039] When magnetron sputtering is performed, the gas flow rate of argon gas entering the vacuum chamber 24 is controlled by the flow valve 32, the magnetron generates a magnetic field, and the power supply applies a negative voltage to the planar target 26 to generate an electric field. Under the action of the electric field, the electrons move from the planar target 26 to the substrate stage 28 or the mask (not shown) in the vacuum chamber 24. During the movement, the electrons collide with argon atoms, causing them to be ionized to produce argon ions and new electrons. Under the action of the electric field, the argon ions are accelerated to fly toward the planar target 26, bombarding the target surface to cause the planar target 26 to sputter. The sputtered planar target 26 atoms are deposited on the surface of the substrate 30 to form a thin film. The secondary electrons generated during sputtering and the new electrons generated when the electrons collide with the argon atoms are used to form a plasma 34 on the surface of the planar target 26 and maintain the plasma 34, so that the above-mentioned argon gas ionization and bombardment process can be repeated to achieve continuous magnetron sputtering film deposition.

[0040] Before describing in detail the magnetron 22 having three or more poles according to the present embodiment, a bipolar magnetron 36 having only two magnetic poles according to the prior art will be described first.

[0041] Figure 2 FIG. 3 is a schematic diagram of a type of bipolar magnetron 36 in the prior art, namely a balanced bipolar magnetron 36a (described later). Figure 2 The bipolar magnetron 36 includes a first magnetic pole 38 and a second magnetic pole 40, wherein the first magnetic pole 38 serves as an inner magnetic pole and may be a back plate of the planar target 26 with an S pole facing the planar target 26, and the second magnetic pole 40 serves as an outer magnetic pole and may be a back plate of the planar target 26 with an N pole facing the planar target 26. A first gap 42 is provided between the first magnetic pole 38 and the second magnetic pole 40. When the magnetic field strengths of the first magnetic pole 38 and the second magnetic pole 40 are substantially the same, the density of the plasma 34 at the position 46 of the strongest magnetic field horizontal component generated on the sputtering surface of the planar target 26 is the highest, and the position 46 of the strongest magnetic field horizontal component is very close to the center line 44 of the first gap 42 between the first magnetic pole 38 and the second magnetic pole 40, that is, the distance D (also referred to as “D” for the sake of distinction) is 42. 1a ”) is close to 0. Therefore, the planar target is etched most deeply at position 46 where the horizontal component of the strongest magnetic field is located.

[0042] The distribution law of the density of the plasma 34 is a normal distribution with the position 46 of the strongest magnetic field horizontal component as the symmetry line. That is, on the sputtering surface of the planar target 26, the density of the plasma 34 is the highest at the position corresponding to the position 46 of the strongest magnetic field horizontal component, and the closer to the magnetic poles located on both sides of the first gap 42, the lower the density of the plasma 34. In addition, the farther away from the planar target 26, the lower the density of the plasma 34. Between the first magnetic pole 38 and the second magnetic pole 40, the etching of the plasma 34 on the surface of the planar target 26 has a certain etching width W1 (Width). When the planar target 26 is fully etched, the etching width W1 is approximately twice the distance from the central symmetry line of the planar target 26, that is, the axial symmetry line of the first magnetic pole 38 to the edge of the planar target 26. When the bipolar magnetron 36 is not moving and is in a stationary state, the planar target 26 is almost not etched outside the area of ​​this etching width W1.

[0043] In order to further explain the relationship between the configuration of the two magnetic poles of the bipolar magnetron 36, the distribution of the plasma 34 on the surface of the planar target 26, and the etching of the planar target 26, the bipolar magnetron 36 is classified according to the relative strength of the two magnetic poles of the bipolar magnetron 36, i.e., the so-called magnetron unbalance ratio. M (R: Ratio, M: Magnetron) is the ratio of the cross-sectional area between two radially adjacent magnetic poles, the radially outer magnetic pole and the radially inner magnetic pole:

[0044] Here, since the end faces of the second magnetic pole 40 (N pole) and the first magnetic pole 38 (S pole) on the side opposite to the planar target 26, that is, the end close to the planar target 26, or called the "planar target end", are in the same plane, that is, the magnetic pole heights are the same, and the two magnetic poles are made of the same magnetic material, the cross-sectional areas of the second magnetic pole 40 and the first magnetic pole 38 can basically represent the magnetic field strength of each magnetic pole.

[0045] Figure 2 The bipolar magnetron 36 in the figure is also called a balanced bipolar magnetron 36a, because the magnetic field lines of the balanced bipolar magnetron 36a are approximately symmetrical with respect to the center line 44 of the first gap 42 between the first magnetic pole 38 and the second magnetic pole 40. The position 46 of the strongest magnetic field horizontal component, i.e., the maximum etching position, is approximately at the position of the center line 44 of the first gap 42 between the first magnetic pole 38 and the second magnetic pole 40. Figure 2 The unbalance ratio of the balanced bipolar magnetron 36a in the embodiment is slightly greater than 1.0, because the cross-sectional area of ​​the first magnetic pole 38 of the balanced bipolar magnetron 36a is generally smaller than the cross-sectional area of ​​the annular second magnetic pole 40. When such a balanced bipolar magnetron 36a is used, the magnetic field also disappears very quickly at a long distance from the planar target 26, such as the position of the substrate 30, and the bombardment of the substrate by ions and electrons in the plasma 34 is reduced, thereby reducing the heating of the substrate.

[0046] Figure 3 The bipolar magnetron 36 has an unbalance ratio of less than 1.0. Here, the bipolar magnetron 36 is also called a strong internal magnetic bipolar magnetron 36b. Figure 3 , relatively speaking, Figure 3 The second magnetic pole 40 (N pole) is weaker than the first magnetic pole 38 (S pole). Figure 3 In the strong internal magnetic bipolar magnetron 36b shown, the symmetric point of the magnetic field lines and the plasma 34 will shift toward the weaker second magnetic pole 40 (N pole), that is, away from the stronger first magnetic pole 38, so that on the planar target 26, the position 46 of the strongest magnetic field horizontal component, that is, the maximum etching position, is closer to the position of the second magnetic pole 40 (N pole). The position 46 of the strongest magnetic field horizontal component, that is, the maximum etching position, is offset from the center line 44 of the first gap 42 and is offset toward the second magnetic pole 40 by a distance D 1b .

[0047] Figure 4 The bipolar magnetron 36 is a bipolar magnetron 36 with an unbalance ratio greater than 1.0. Here, the bipolar magnetron 36 is also referred to as a strong external magnetic bipolar magnetron 36c. Figure 4 , relatively speaking, Figure 4 The second magnetic pole 40 (N pole) is stronger than the first magnetic pole 38 (S pole). Figure 4 In the strong external magnetic bipolar magnetron 36c shown, the symmetric point of the magnetic field lines and the plasma 34 will shift toward the weaker first magnetic pole 38 (S pole), that is, away from the stronger second magnetic pole 40 (N pole), so that on the planar target 26, the position 46 of the strongest magnetic field horizontal component, that is, the maximum etching position, is closer to the position of the first magnetic pole 38 (S pole). The position 46 of the strongest magnetic field horizontal component, that is, the maximum etching position, is offset from the center line 44 of the first gap 42 and deviates from the first magnetic pole 38 (S pole) by a distance D 1C . Reference Figure 4 It can be seen that the magnetic field lines of the strong external magnetic bipolar magnetron 36c are distributed in a shape gradually away from the side wall of the vacuum chamber 24 near the sputtering surface of the planar target 26. This distribution of magnetic field lines is conducive to reducing the loss of metal ions after ionization of sputtered metal atoms to the mask (not shown).

[0048] However, when the unbalance ratio is much greater than 1.0, the strong external magnetic bipolar magnetron 36c is not suitable for full-area etching of the planar target 26. This is because the auxiliary reference Figure 1For example, at the edge of the planar target 26 of the PVD magnetron sputtering device 20, there is a trade-off between the etching (Sputtering, Erosion) rate and the redeposition (Redeposition) rate. The redeposition on the planar target 26 refers to the rebound of the sputtered planar target 26 atoms to the surface of the planar target 26 after collision with each other, and the rebound of the planar target 26 surface after collision with the atoms on the surface of the planar target 26. When the etching rate at the edge of the planar target 26 is higher than the redeposition rate, the edge of the planar target 26 is etched, that is, the planar target 26 is etched more cleanly. When the etching rate at the edge of the planar target 26 is lower than the redeposition rate, there is redeposition at the edge of the planar target 26, that is, the planar target 26 does not achieve full-area etching. For the unbalance ratio far greater than 1.0, for example, when the unbalance ratio of the strong external magnetic bipolar magnetron 36c is greater than 8.0, the plasma 34 is pushed closer to the inner weak magnetic pole (first magnetic pole 38) by the outer strong magnetic pole (second magnetic pole 40). In this case, it is difficult to push the etching edge of the plasma 34 to the edge of the planar target 26 by moving the strong external magnetic bipolar magnetron 36c to the edge of the planar target 26. In addition, when the unbalance ratio of the strong external magnetic bipolar magnetron 36c is much greater than 1.0 (for example, greater than 8.0), in the process of moving the strong external magnetic bipolar magnetron 36c toward the edge of the planar target 26, the voltage of the planar target 26 becomes higher and higher, while the current becomes lower and lower, so the plasma 34 becomes weaker and weaker. Before the etching area of ​​the plasma 34 is pushed to the edge position of the planar target 26, the voltage of the planar target 26 is too high, so the plasma 34 may be about to extinguish. Therefore, when the unbalance ratio of the strong external magnetic bipolar magnetron 36c is much greater than 1.0, it is difficult to push the etching area of ​​the plasma 34 to the edge position of the planar target 26, which means that the redeposition rate at the edge of the planar target 26 is dominant, and full-area etching cannot be performed.

[0049] It should be noted that for the bipolar magnetron 36, the unbalance ratio can easily exceed 1.0. This is because the first magnetic pole 38 (inner magnetic pole) of the annular bipolar magnetron 36 is generally a small cylindrical magnet block with a relatively small cross-sectional area; while the second magnetic pole 40 (outer magnetic pole) of the bipolar magnetron 36 is generally a relatively large circular ring with a relatively large cross-sectional area. Therefore, the larger the first gap 42 between the first magnetic pole 38 (inner magnetic pole) and the second magnetic pole 40 (outer magnetic pole), the larger the circumference of the second magnetic pole 40, and the larger the unbalance ratio when the width of the second magnetic pole 40 remains unchanged.

[0050] The use of a bipolar magnetron 36 with an unbalance ratio close to 1.0, for example, a bipolar magnetron 36 with an unbalance ratio of 0.8 to 4.0, can more effectively improve the full-area etching performance of the edge of the planar target 26. Before use, first confirm the limit position of the bipolar magnetron 36, that is, the farthest position where the bipolar magnetron 36 can be moved under the condition of stable plasma 34. It can also be said that the limit position is a position where the outermost side of the magnetic pole of the bipolar magnetron 36 is moved to a position close to or even beyond the edge of the planar target 26, and the voltage of the planar target 26 begins to increase significantly. For example, when the magnetron is at the limit position, the voltage of the planar target 26 is increased by about 20V compared to the voltage of the planar target 26 when the magnetron is at the normal position. Here, the normal voltage of the planar target 26 refers to the stable voltage when the bipolar magnetron 36 is located within the edge of the planar target 26. After confirming the extreme position of the bipolar magnetron 36 , by setting the bipolar magnetron 36 having an unbalance ratio of 0.8 to 4.0 at the extreme position, full-area etching of the corresponding edge of the planar target 26 can be performed more easily.

[0051] Figure 5 The etching conditions of the bipolar magnetron 36 and the corresponding planar target 26 are shown. Figure 6 The figure shows the etching of the planar target 26 by the bipolar magnetron 36, wherein (a) shows the etching before the size of the first magnetic pole 38 is reduced, and (b) shows the etching after the size of the first magnetic pole 38 is reduced (i.e., the unbalanced ratio is greater than 1.0). Figure 5 as well as Figure 6 In the figure, the first magnetic pole 38 (S pole) of the bipolar magnetron 36 is at the center, and the second magnetic pole 40 (N pole) is at the outside. In addition, for the sake of distinction, the outer periphery of the first magnetic pole 38 is also referred to as the first magnetic pole outer periphery 48, the inner periphery of the second magnetic pole 40 is also referred to as the second magnetic pole inner periphery 50, and the outer periphery of the second magnetic pole 40 is also referred to as the second magnetic pole outer periphery 52. ​​The planar target edge 54 is slightly smaller than the second magnetic pole outer periphery 52. Figure 5 In the bipolar magnetron 36 shown, since the magnetic field strength of the first magnetic pole 38 (S pole) is relatively strong, the plasma 34 is pushed to the second magnetic pole 40 with relatively weak magnetic field strength, and the etching of the plasma 34 on the surface of the planar target 26 is pushed to a position close to the planar target edge 54. Since the target material edge etching boundary 56 of the planar target 26 is very close to the planar target edge 54, the planar target 26 is fully etched at the planar target edge 54. However, the central area of ​​the planar target 26 may not be etched, and a target material central unetched area 58 appears, and the target material central unetched area 58 has a target material central unetched area boundary 60.

[0052] It should be noted that, since the etching width is wider than the gap between the two magnetic poles, the size of the unetched area 58 in the center of the target is often smaller than the size of the first magnetic pole periphery 48 of the first magnetic pole 38 (S pole) at the center. Figure 5 In the embodiment, the plasma 34 and the etching area are mainly concentrated in the portion of the planar target 26 corresponding to the first gap 42 between the outer second magnetic pole 40 (N pole) and the central first magnetic pole 38 (S pole). In addition, the central etching termination position of the planar target 26, i.e., the boundary 60 of the unetched area in the center of the target material, and the outer periphery 48 of the first magnetic pole differ by a distance L.

[0053] Reference Figure 5 and Figure 6 It can be seen that the magnetic field lines and plasma 34 will deviate toward the weaker first magnetic pole 38 (S pole), that is, away from the stronger second magnetic pole 40 (N pole), so that Figure 5 and Figure 6 The target material center unetched area boundary 60 located in the center area of ​​the planar target 26 in (a) gradually shrinks and becomes Figure 6 The tiny unetched area in (b) (also referred to as the tiny unetched area boundary 62 for easy distinction) is Figure 6 In (b), the tiny unetched area boundary 62 of the unetched area 58 in the center of the target material is reduced to a state where it almost disappears, that is, the target material is fully etched. Figure 6 In (a), the size of the first magnetic pole periphery 48 is larger than the size of the target center unetched area boundary 60 by L. When the size of the first magnetic pole periphery 48 is reduced by L1, the size of the target center unetched area boundary 60 is reduced by L2 and becomes a tiny unetched area boundary 62, and the target center unetched area 58 becomes almost disappeared.

[0054] However, since the first gap 42 between the second magnetic pole 40 (S pole) and the first magnetic pole 38 (N pole) of the bipolar magnetron 36 consisting of two magnetic poles to form the single-ring plasma 34 cannot be too large to cause the magnetic field intensity approximately at the center of the first gap 42 to be too weak, when the area of ​​the planar target 26 increases to a certain extent, it becomes difficult to achieve comprehensive etching of the planar target 26.

[0055] In view of this, the magnetron of the present embodiment is a magnetron 22 having three or more poles, that is, the magnetron of the present embodiment has three or more magnetic poles. Figure 7An example of a magnetron 22 having more than three poles, namely a three-pole magnetron 22a, is shown. The three-pole magnetron 22a includes a first magnetic pole 38, a second magnetic pole 40, and a third magnetic pole 64. The three magnetic poles include at least two ring-shaped and closed magnetic poles, which are nested in sequence in the same plane in a manner that a first gap 42 and a second gap 66 are formed in the radial direction. It should be noted that "nested in sequence" here means the following situation: taking the center of the magnetron as the inner side and the outer periphery of the magnetron as the outer side, among the two adjacent magnetic poles, the outer diameter of the magnetic pole located on the inner side is smaller than the inner diameter of the magnetic pole located on the outer side, so that the magnetic pole located on the outer side can be nested in the outer periphery of the magnetic pole located on the inner side, and the inner peripheral surface of the magnetic pole on the outer side is opposite to the outer peripheral surface of the magnetic pole on the inner side.

[0056] The magnetron 22 with more than three poles of this embodiment can be used as a stationary magnetron in the PVD magnetron sputtering device 20 to improve the full-area etching performance of the planar target 26 when the magnetron 22 with more than three poles has no relative movement with respect to the planar target 26 .

[0057] exist Figure 7 In the embodiment, the first magnetic pole 38 (S pole) is located at the center of the three-pole magnetron 22a, the third magnetic pole 64 (S pole) is located at the outermost periphery of the three-pole magnetron 22a, and the second magnetic pole 40 (N pole) is sandwiched between the first magnetic pole 38 (S pole) and the third magnetic pole 64 (S pole). The first gap 42 between the first magnetic pole 38 (S pole) located at the center (center of the yoke) and the second magnetic pole 40 (N pole) located at the middle position constitutes a first closed loop, corresponding to the first plasma loop. The second gap 66 between the second magnetic pole 40 (N pole) located at the middle position and the third magnetic pole 64 (S pole) located at the periphery constitutes a second closed loop, corresponding to the second plasma loop. When the three-pole magnetron 22a is used and power is applied to the planar target 26, two annular plasmas 34 at positions corresponding to the first gap 42 and the second gap 66 simultaneously etch the planar target 26.

[0058] By providing more than three magnetic poles and nesting these magnetic poles in sequence in the same plane with gaps formed in the radial direction, the magnetic pole widths, the gaps between the magnetic poles and / or the overall dimensions of the third magnetic pole 64 (S pole) at the outer position on the yoke, the second magnetic pole 40 (N pole) at the middle position and the first magnetic pole 38 (S pole) at the center position can be optimized, thereby improving the full-area etching performance of the planar target 26.

[0059] In addition, by providing more than three magnetic poles, it is easier to adjust the magnetic poles at the periphery, for example Figure 7, which is the position and size of the third magnetic pole 64 (S pole), so that the unetched area at the edge ("dead zone") of the large-sized planar target 26 can be easily eliminated. By adjusting the size of the first magnetic pole 38 (S pole) at the center and the corresponding magnetic field strength, the target center unetched area 58 ("dead zone") in the central area of ​​the planar target 26 can be easily eliminated. For example, the surface of the planar target 26 corresponding to the first closed loop (plasma ring) corresponding to the first gap 42 between the first magnetic pole 38 and the second magnetic pole 40 has an etched width W1, and the surface of the planar target 26 corresponding to the second closed loop (plasma ring) corresponding to the second gap 66 between the second magnetic pole 40 and the third magnetic pole 64 has an etched width W2, and there is an overlapping narrow band between the etched width W2 and the etched width W1, and the overlapping narrow band width G 1-2 Greater than 0mm and less than 6mm.

[0060] By setting the overlapping narrow band, the full-area etching property of the relevant area can be improved. Due to the existence of the overlapping narrow band, the excessive increase of the etching widths W2 and W1 can be suppressed. For example, if there is no overlap between the etching widths W2 and W1, it is necessary to widen the etching widths W2 and W1. If the etching width W1 is to be widened and expanded outward, the first magnetic pole 38 needs to be strengthened, or the second magnetic pole 40 needs to be weakened. To widen the etching width W2 and overlap with the etching width W1, the third magnetic pole 64 needs to be strengthened, or the second magnetic pole 40 needs to be weakened. However, excessive weakening of the second magnetic pole 40 will bring difficulties to the ignition and maintenance of the plasma. In addition, excessive strengthening of the first magnetic pole 38 will lead to an increase in the unetched area 58 in the center of the target material.

[0061] Therefore, when the size of the planar target 26 increases, by providing more magnetic poles nested in sequence in the same plane with gaps formed in the radial direction, the range covered by the magnetron of the horizontal magnetic field parallel to the sputtering surface of the planar target 26 can be expanded even when the magnetron remains stationary, thereby expanding the range in which the plasma can effectively etch, and further improving the full-area etching property of the planar target 26.

[0062] Among the multiple magnetic poles in the magnetron 22 having more than three poles, except for the first magnetic pole 38 which can be either a solid column or a hollow ring, the other magnetic poles are all ring-shaped and closed magnetic poles. As ring-shaped and closed magnetic poles, the shapes of these magnetic poles can be set according to the geometric shape of the planar target 26, for example Fig. 9 as well as Fig.10 In this embodiment, the magnetron can be circular, elliptical (for example, refer to Fig.10 The magnetron 22c may be an elliptical magnetron 22c that is close to an ellipse), a square, a triangle, and various other shapes.

[0063] The polarities of the adjacent ends of the adjacent magnetic poles are different. In a specific example, when the surface of the first magnetic pole 38, the second magnetic pole 40, and the third magnetic pole 64 opposite to the planar target 26 is used as the planar target end, the polarity of the planar target end of the first magnetic pole 38 is an S pole, the polarity of the planar target end of the second magnetic pole 40 is an N pole, and the polarity of the planar target end of the third magnetic pole 64 is an S pole. Alternatively, the polarity of the planar target end of the first magnetic pole 38 is an N pole, the polarity of the planar target end of the second magnetic pole 40 is an S pole, and the polarity of the planar target end of the third magnetic pole 64 is an N pole.

[0064] Between two magnetic poles adjacent in the radial direction, the cross-sectional area ratio between the magnetic pole located on the radial outer side and the magnetic pole located on the radial inner side is 0.8 to 8.0. For example, if the radius of the first magnetic pole 38 is r1 and the inner diameter of the second magnetic pole 40 is r 2a , outer diameter as r 2b , and the inner diameter of the third magnetic pole 64 is taken as r 3a , outer diameter as r 3b In the case of The cross-sectional area of ​​the first magnetic pole 38 is S1=πr1 2 ; The cross-sectional area S2 of the second magnetic pole 40 = π(r 2b 2 -r 2a 2 ); The cross-sectional area S3 of the third magnetic pole 64 is 3b 2 -r 3a 2 ).

[0065] At this time, the unbalance ratio R between the second magnetic pole 40 and the first magnetic pole 38 of the three-pole magnetron 22a is M , that is, S2 / S1 may be 0.8 to 8.0, or more preferably, 0.8 to 4.0. The unbalanced ratio R between the third magnetic pole 64 and the second magnetic pole 40 of the three-pole magnetron 22a M , that is, the area S3 / S2 may be 0.8 to 3.0, or more preferably, 1.0 to 2.0. It should be noted that the unbalanced ratio R between the second magnetic pole 40 and the first magnetic pole 38 is M , that is, S2 / S1 can be less than 8.0. This is because, since the first magnetic pole 38 can be a solid small cylinder, and the second magnetic pole 40 is a ring shape, in this case, it can be easily achieved that the cross-sectional area S2 of the second magnetic pole 40 is much larger than the cross-sectional area S1 of the first magnetic pole 38.

[0066] Figure 8The illustrated magnetron 22 b is a quadrupole magnetron 22 b, which is another example of a magnetron 22 having more than three poles, ie, having four magnetic poles: a first magnetic pole 38 , a second magnetic pole 40 , a third magnetic pole 64 and a fourth magnetic pole 68 . Figure 8 The quadrupole magnetron 22b and Figure 7 The difference between the three-pole magnetron 22a and the three-pole magnetron 22a is mainly the fourth magnetic pole 68. Therefore, in addition to this, Figure 6 The same technical features are given the same reference numerals. Figure 8 In the example, the inner diameter of the fourth magnetic pole 68 is taken as r 4a , outer diameter as r 4b , thus, the cross-sectional area S4 of the fourth magnetic pole 68 = π (r 4b 2 -r 4a 2 ).

[0067] In addition, Figure 8 In the embodiment, the surface of the planar target 26 corresponding to the third closed ring (plasma ring) corresponding to the third gap 70 between the third magnetic pole 64 and the fourth magnetic pole 68 has an etched width W3, and there is an overlapping narrow band between the etched width W2 and the etched width W3, and the overlapping narrow band width G 2-3 For example, it is larger than 0 mm and smaller than 6 mm.

[0068] Furthermore, for example, there is still a magnetic pole outside the fourth magnetic pole 68, so that when there is an etched width between the fourth magnetic pole 68 and the magnetic pole, there is also an overlapping narrow band between the etched width and the etched width W3, and the overlapping narrow band width G 3-4 For example, it is larger than 0 mm and smaller than 6 mm.

[0069] The width of the gap between two magnetic poles adjacent in the radial direction (e.g., the first gap 42, the second gap 66, and the third gap 70) is 4 mm to 60 mm. For example, between two magnetic poles adjacent in the radial direction, the inner diameter (diameter) of the magnetic pole located on the outer side in the radial direction is 8 mm to 120 mm larger than the outer diameter (diameter) of the magnetic pole located on the inner side in the radial direction. In other words, for example, the radius r of the inner circumference of the second magnetic pole 40 is 2a The radius r1 of the outer periphery of the first magnetic pole 38 is 4 mm to 60 mm larger. By making these gaps 4 mm or more, the magnetic poles in the three-pole magnetron 22a can be effectively adjusted so that the corresponding magnetic lines of force are more reasonably distributed and have sufficient magnetic field strength, so that the corresponding plasma 34 can effectively etch the planar target 26. In addition, by making these gaps 60 mm or less, the weakening of the magnetic field can be suppressed, thereby ensuring the full-area etching property of the edge area of ​​the planar target 26.

[0070] In addition, although the number of poles of the magnetron 22 having three or more poles is not particularly limited, the number of poles may be 10 or less.

[0071] Fig.11 The diameter of the first magnetic pole 38 is 30 mm, and the widths of all magnetic poles above the second magnetic pole 40 (n is 2 to 10) (for example, for the second magnetic pole 40, r 2b -r 2a ) are 20 mm, the width of the gaps between all the poles is 30 mm (for example, for the second pole 40 and the third pole 64, r 3a -r 2b ) is a magnetron having a non-balanced ratio and a magnetron having a pole number. In addition, the thickness of the planar target 26 corresponding to the magnetron is 25 mm.

[0072] In the diagram, the magnetron unbalance ratio R M -1 (R M Subtract 1) as the Y coordinate, take the number of poles n (from inside to outside) as the X coordinate, the number of poles n corresponds to the unbalanced ratio between the n+1th pole and the nth pole, and do not consider the influence of the other inner poles of the nth pole or the other outer poles of the n+1th pole on the unbalanced ratio between the nth pole and the n+1th pole, so that the obtained curve fits to this equation: Y=aX b Here, a=1.84, b=-27, these values ​​of a and b are automatically given by the curve fitting equation. The above equation is: R M(n+1,1) =an b +1 Here, n represents the serial number of the magnetic pole from the inside to the outside, and n is an integer and satisfies: 1≤n≤m-1, where m is the serial number of the outermost magnetic pole in the magnetron. For example, when n=1, n is the first magnetic pole, that is, the solid magnetic pole located at the center of the magnetron. When n is an integer greater than or equal to 2, the nth magnetic pole represents a ring-shaped and closed magnetic pole other than the first magnetic pole, and the n+1th magnetic pole represents a magnetic pole radially adjacent to the nth magnetic pole and sleeved on the outer circumference of the nth magnetic pole. In this embodiment, m≥3, and m can be less than or equal to 10. When n=1, R M(2,1) =a+1. That is, a is equal to the unbalanced ratio of the second magnetic pole 40 and the first magnetic pole 38 minus 1. As n increases, because b is a negative value and its absolute value is greater than 1, an b Approaching 0, that is, R M(n+1,n) Approaching 1.0.

[0073] That is, when the width of each magnetic pole is the same, as the number of magnetic poles increases, the unbalance ratio R of the magnetron increases.M Getting closer and closer to 1.0.

[0074] As described above, by using a magnetron with an unbalanced ratio of the outer magnetic pole close to 1.0, the full-area etching property of the edge of the planar target 26 can be more effectively improved. This is different from the previous understanding that: for the planar target 26 of the same PVD magnetron sputtering device 20, only one closed-loop plasma exists near the sputtering surface of the planar target 26 at the same time. In this embodiment, by using a magnetron 22 with more than three poles, a magnetron 22 with more than three poles can be realized with an unbalanced ratio of the outer magnetic pole close to 1.0, so that more than two closed-loop plasmas can be generated, and these multi-loop plasmas are nested, thereby more effectively improving the full-area etching property of the planar target 26.

[0075] In addition, in the magnetron 22 having three or more poles, the unbalance ratio of each magnetic pole can be finely adjusted when the unbalance ratio of the outer magnetic pole is close to 1, so that the full-area etching property of the planar target 26 can be more effectively improved. For example, in the three-pole magnetron 22a, the area ratio of the cross section between the second magnetic pole 40 and the first magnetic pole 38, which is radially adjacent to the first magnetic pole 38 and located radially outside the first magnetic pole, is 0.8 to 8.0, that is, S2 / S1 can be 0.8 to 8.0. Or more preferably, 0.8 to 4.0. As described above, the magnetic lines of force and the plasma 34 will deviate toward the weaker magnetic pole, that is, away from the stronger magnetic pole. When the area of ​​the cross section of the second magnetic pole 40 is made larger than the area of ​​the cross section of the first magnetic pole 38, the magnetic lines of force and the plasma 34 will deviate toward the first magnetic pole 38. Thus, by making S2 / S1≥0.8, the plasma 34 constrained by the magnetic field lines generated by the first magnetic pole 38 and the second magnetic pole 40 can be brought closer to the position of the first magnetic pole 38 at the position of the strongest magnetic field horizontal component 46, i.e., the maximum etching position, on the planar target 26, thereby reducing the "unetched area" located in the central area of ​​the planar target 26 and improving the full-area etching performance of the central area of ​​the planar target 26. In addition, by making S2 / S1≤8.0, it is possible to prevent the magnetic field lines and the plasma 34 from becoming smaller in the peripheral dimensions of the area of ​​the second magnetic pole 40, thereby preventing the unetched area from appearing in the area of ​​the planar target 26 corresponding to the second magnetic pole 40. Furthermore, by making S2 / S1≤4.0, it is possible to further prevent the magnetic field lines and the plasma 34 from becoming smaller in the peripheral dimensions of the area of ​​the second magnetic pole 40, thereby preventing the "unetched area" from appearing in the area of ​​the planar target 26 corresponding to the second magnetic pole 40.

[0076] In addition, when n≥2, the area ratio of the cross section between the n+1th magnetic pole and the nth magnetic pole adjacent to it on the inner side in the radial direction is 0.8 to 3.0, and more preferably 1.0 to 2.0. It should be noted that n≥2 is to distinguish the first magnetic pole 38 from the second magnetic pole 40 mentioned above. For example, the area ratio of the cross section between the third magnetic pole 64 and the second magnetic pole 40 adjacent to it on the inner side in the radial direction is 0.8 to 3.0. Similarly, for the outermost magnetic pole of the magnetron, that is, the mth magnetic pole (for example, when the magnetron has three poles, the outermost magnetic pole is the "third magnetic pole 64", and when the magnetron has four poles, the outermost magnetic pole is the "fourth magnetic pole 68") and the magnetic pole adjacent to it on the inner side, that is, the m-1th magnetic pole, the area ratio of the cross section is S m / S m-1 Similarly, it can be 0.8 to 3.0, more preferably, 1.0 to 2.0, wherein S m is the cross-sectional area of ​​the outermost magnetic pole, i.e., the mth magnetic pole, S m-1 is the cross-sectional area of ​​the magnetic pole adjacent to the outermost magnetic pole on the inner side, i.e., the m-1th magnetic pole. n+1 / S n When S is close to 1.0, the magnetron is a relatively balanced magnetron, and the plasma 34 is located at a central symmetrical position of the gap between the two magnetic poles. n+1 / S n ≤3, the position 46 of the strongest magnetic field horizontal component of the magnetic field lines generated by the outer magnetic pole, i.e., the n+1 magnetic pole, and the magnetic pole adjacent to the n+1 magnetic pole on the inner side on the planar target 26 can be located at a position symmetrical to the center of the gap between the n+1 magnetic pole and the n magnetic pole, thereby reducing the unetched area at the peripheral edge area of ​​the planar target 26 and improving the full-area etching performance of the edge area of ​​the planar target 26. In addition, by making S n+1 / S n ≥0.8, especially by making S m / S m-1 ≥0.8, which can suppress the excessive transfer of magnetic lines and plasma 34 to the periphery of the outermost magnetic pole, thereby reducing the loss of metal ions after the sputtered metal atoms are ionized to the shielding plate.

[0077] Therefore, the magnetron of the present embodiment includes more than three magnetic poles, at least two of which are ring-shaped and closed, and these magnetic poles are nested in sequence in the same plane in a manner of forming gaps (such as the first gap 42, the second gap 66, and the third gap 70) along the radial direction, so that the magnetron can be used as a stationary magnetron and used in the PVD magnetron sputtering device 20 to improve the full-area etching performance of the planar target 26 without relative movement of the magnetron relative to the planar target 26. For example, the magnetron of the present embodiment can appropriately increase the number of ring-shaped and closed magnetic poles in the magnetron according to the size of the planar target 26, or appropriately change the shape of the ring-shaped and closed magnetic poles according to the shape of the planar target 26, without the need to drive the magnetron to scan relative to the planar target 26 or drive the planar target 26 to rotate through a driving device.

[0078] As described above, the present embodiment can be used in a PVD magnetron sputtering device 20, and can improve the full-area etching performance of the planar target 26 when there is no relative movement between the magnetron and the planar target 26. As described above, the PVD magnetron sputtering device 20 includes: a vacuum chamber 24, a planar target 26, a substrate stage 28, and a magnetron 22 with three or more poles of the above embodiment. The planar target 26 is arranged in the vacuum chamber 24 and is located above the vacuum chamber 24. The substrate stage 28 is arranged in the vacuum chamber 24 and is located below the planar target 26. The magnetron 22 with three or more poles of the above embodiment is arranged on the back of the vacuum chamber 24, and is opposite to the planar target 26 in the up-down direction.

[0079] In the PVD magnetron sputtering device 20, the gaps between the magnetic poles of the magnetron (e.g., the first gap 42, the second gap 66, and the third gap 70) can be set according to the thickness of the planar target 26. For example, the ratio of the width of the gap between the adjacent magnetic poles of the magnetron to the thickness of the planar target 26, i.e., the ratio of the magnetic pole gap to the target thickness, is set to be greater than 0.2:1 and less than 3:1. The thickness of the planar target 26 is the thickness from the end of the planar target 26 opposite to the magnetron (i.e., the end surface of the back plate end of the planar target 26) to the end of the planar target 26 opposite to the substrate stage 28 (i.e., the sputtering surface of the planar target 26). Since the narrower the width of the gap between two adjacent magnetic poles, the narrower the range in which the horizontal direction component generated by the two adjacent opposite magnetic poles exceeds a certain value, the more difficult it is for the plasma to ignite. By setting the ratio of the magnetic pole gap to the target thickness to be greater than 0.2:1, the plasma can be stably ignited. Furthermore, by setting the ratio of the magnetic pole gap to the target thickness to 3:1 or less, it is possible to suppress the horizontal direction component generated by the two opposite magnetic poles from becoming too weak.

[0080] Although examples of the present embodiment have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present embodiment, and the scope of the present embodiment is defined by the claims and their equivalents.

Claims

1. A magnetron having more than three poles, opposite to a backing plate of a planar target for physical vapor deposition, characterized in that: Among the three or more magnetic poles, at least two of the magnetic poles are ring-shaped and closed, and the magnetic poles are nested in sequence in the same plane in a manner of forming gaps in the radial direction.

2. The magnetron with three or more poles according to claim 1, characterized in that: Among the three or more magnetic poles, a solid first magnetic pole is included, and the first magnetic pole is located at the center of the magnetron.

3. The magnetron with three or more poles according to claim 2, characterized in that: The polarities of the two adjacent magnetic poles are opposite, one of which is an N pole and the other is an S pole; and, The ring-shaped and closed magnetic poles include: an nth magnetic pole and an n+1th magnetic pole, wherein the n+1th magnetic pole is radially adjacent to the nth magnetic pole and is sleeved on the outer periphery of the nth magnetic pole, wherein n represents the serial number of the magnetic pole from the inside to the outside, and n is an integer greater than or equal to 2; The ring-shaped gap is formed between the n+1th magnetic pole and the nth magnetic pole.

4. The magnetron with three or more poles according to claim 2, characterized in that: A cross-sectional area ratio between the magnetic pole adjacent to the first magnetic pole in the radial direction and located radially outside the first magnetic pole and the first magnetic pole is 0.8 to 8.

0.

5. The magnetron with three or more poles according to claim 4, characterized in that: A cross-sectional area ratio between the magnetic pole adjacent to the first magnetic pole in the radial direction and located radially outside the first magnetic pole and the first magnetic pole is 0.8 to 4.

0.

6. The magnetron with three or more poles according to claim 3, characterized in that: A cross-sectional area ratio between the n+1th magnetic pole and the nth magnetic pole adjacent thereto on the inner side in the radial direction is 0.8 to 3.

0.

7. The magnetron with three or more poles according to claim 6, characterized in that: A cross-sectional area ratio between the n+1th magnetic pole and the nth magnetic pole adjacent thereto on the inner side in the radial direction is 1.0 to 2.

0.

8. The magnetron having three or more poles according to any one of claims 1 to 7, characterized in that: The width of the gap is greater than 0 mm and less than 60 mm.

9. PVD magnetron sputtering equipment, characterized in that: include: Vacuum chamber; A planar target is disposed in the vacuum chamber and located above the vacuum chamber; A substrate stage is arranged in the vacuum chamber and below the planar target; The magnetron having three or more poles according to any one of claims 1 to 8 is arranged on the back side of the planar target and faces the back plate of the planar target in the up-down direction.

10. The PVD magnetron sputtering device according to claim 9, characterized in that: The ratio of the width of the gap of the magnetron having three or more poles to the thickness of the planar target is 0.2:1 to 3:1.

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