Preparation method of crimping type high-temperature-resistant diode and crimping type high-temperature-resistant diode

Abstract

The preparation method comprises the steps that a base used for packaging a diode chip is prepared, the whole base is of a cylindrical structure with one end open, an annular groove is formed in the bottom end face in the base along the circumference of the cylindrical side wall, and a hemispherical groove is formed in the center of the bottom end face; the chip is welded on the upper end face of the molybdenum sheet in a welding mode, and the second silver sheet, the chip and the molybdenum sheet which form an integral structure after welding, the first silver sheet and the pressing block are sequentially placed on the bottom end face of the base; an insulating bush is arranged on the pressing block, the first silver sheet, the chip, the molybdenum sheet and the second silver sheet in a sleeving mode and used for positioning and forming a structure to be crimped, and the insulating bush is further used for isolating a chip assembly formed by the first silver sheet, the chip, the molybdenum sheet and the second silver sheet from the side wall of the base; a belleville spring sleeves the periphery of the top end of the insulating bush, and pressure is applied to the top of the side wall of the base through a special crimping tool, so that the top of the side wall of the base is bent inwards and crimped to the edge of the periphery of the belleville spring; and silicon rubber is coated in an annular concave cavity between the side wall of the crimped base shell and the pressing block, so that a silicon rubber coating is formed, and the packaging structure of the diode is formed. According to the technical scheme of the invention, the problems that the existing diode packaged by welding and crimping cannot stably work under the condition of larger mechanical stress and cannot be suitable for the use requirement of a high-temperature environment are solved.

Description

Technical Field

[0001] The present invention relates to but is not limited to the technical field of preparation of a press-fit high temperature resistant diode, and in particular to a preparation method of a press-fit high temperature resistant diode and a press-fit high temperature resistant diode. Background Art

[0002] Currently, diodes are mainly packaged by welding, including tin soldering, spot welding, fusion welding, etc. Diodes packaged by welding technology have the following defects: a large amount of heat is generated when the diode is working, which may cause the solder joints and welding surfaces to melt due to the heat, causing the diode to fail; the alternation of hot and cold during the use of the diode causes temperature cycles, which produces thermal fatigue effects on the welding surface.

[0003] At present, the packaging method of diodes also includes crimping packaging, which usually adopts crimping forms such as pressure pins and bolts. However, the diodes formed by the existing crimping form cannot meet the use requirements under high temperature conditions, and the chip is easily broken under the action of mechanical stress, which cannot meet the mechanical strength requirements of the diode.

[0004] It can be seen that the existing diodes with welding packaging and crimping packaging cannot meet the requirements of stable operation under large mechanical stress and are suitable for use in high temperature environments. Summary of the invention

[0005] Purpose of the invention: In order to solve the above-mentioned technical problems, the embodiments of the present invention provide a method for preparing a crimped high-temperature resistant diode and a crimped high-temperature resistant diode, so as to solve the problem that the existing diodes of welding package and crimping package cannot meet the requirements of stable operation under large mechanical stress and are not suitable for use in high-temperature environments.

[0006] Technical solution of the present invention: In a first aspect, an embodiment of the present invention provides a method for preparing a press-fit high temperature resistant diode, comprising:

[0007] Step 1, preparing a base 9 for encapsulating the diode chip 6, wherein the base 9 is a cylindrical structure with one end open, an annular groove is formed on the bottom end surface of the base 9 along the cylindrical side wall, and a hemispherical groove is formed at the center of the bottom end surface;

[0008] Step 2, welding the chip 6 to the upper end surface of the molybdenum sheet 7 by welding, and sequentially placing the second silver sheet 8, the chip 6 and the molybdenum sheet 7 formed into an integral structure after welding, the first silver sheet 5 and the pressing block 1 on the bottom end surface of the base 9;

[0009] Step 3, sleeve the insulating bushing 3 on the pressing block 1, the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8 to position and form a structure to be crimped, and the insulating bushing 3 is also used to isolate the side wall of the chip assembly formed by the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8 from the base 9;

[0010] Step 4, a disc spring 4 is sleeved around the top circumference of the insulating bushing 3, and pressure is applied to the top of the side wall of the base 9 through a special crimping tool, so that the top of the side wall is bent inward and crimped to the edge of the disc spring 4;

[0011] Step 5: Silicon rubber is coated in the annular cavity between the side wall of the base 9 shell and the pressing block 1 after crimping to form a silicone rubber coating 2 to form a packaging structure of the diode.

[0012] Optionally, in the method for preparing the crimped high temperature resistant diode as described above,

[0013] The insulating bushing 3 is configured as a two-stage stepped bushing, wherein the upper small-diameter bushing portion of the insulating bushing 3 is sleeved on the pressure block 1 and is located between the pressure block 1 and the disc spring 4, and the lower large-diameter bushing portion is sleeved between the chip assembly formed by the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8 and the side wall of the base 9 shell.

[0014] Optionally, in the method for preparing the crimped high temperature resistant diode as described above,

[0015] In step 1, the annular groove and the hemispherical groove are formed to release the stress on the chip 6. The annular groove also ensures that the insulating bushing 3 completely isolates the chip 6 from the side wall of the base 9 when the insulating bushing 3 is installed.

[0016] Optionally, in the method for preparing the crimped high temperature resistant diode as described above,

[0017] The step 1 also includes: forming a plurality of concentrically arranged annular grooves on the inner bottom end surface of the base 9 .

[0018] In a second aspect, an embodiment of the present invention further provides a press-fit high temperature resistant diode, which is formed by using a preparation method of a press-fit high temperature resistant diode as provided in any of the above items.

[0019] Optionally, the press-fit high temperature resistant diode as described above comprises: a pressing block 1, a silicone rubber coating 2, an insulating bushing 3, a disc spring 4, a first silver sheet 5, a chip 6, a molybdenum sheet 7, a second silver sheet 8 and a base 9;

[0020] The base 9 is configured as a cylindrical structure with one end open, an annular groove is formed on the bottom end surface of the inner part of the cylinder along the cylindrical side wall, and a hemispherical groove is formed in the center of the bottom end surface; the second silver sheet 8, the chip 6 and the molybdenum sheet 7 are welded to form an integrated structure, and the first silver sheet 5 and the pressing block 1 are placed on the bottom end surface of the base 9 in sequence; and the insulating bushing 3 is sleeved on the outside of the pressing block 1, the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8, for positioning to form a structure to be crimped, and for isolating the chip assembly formed by the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8 from the side wall of the base 9;

[0021] The disc spring 4 is sleeved on the outside of the top end of the insulating bushing 3, and the top of the side wall of the base 9 is crimped to form a crimped top so that the top of the side wall is bent inward and crimped to the edge of the circumference of the disc spring 4, so that the disc spring 4 generates pre-pressure; the silicone rubber coating 2 is formed by coating silicone rubber in the annular concave cavity between the side wall of the base 9 shell and the pressure block 1 after crimping.

[0022] Optionally, in the crimp-type high temperature resistant diode as described above,

[0023] The pressing block 1 is arranged as a three-step structure, and the insulating bushing 3 is arranged as a two-step bushing. The bottom large-end cylinder of the pressing block 1 is pressed onto the chip assembly as a whole, the upper small-diameter bushing portion of the insulating bushing 3 is sleeved on the outer periphery of the middle cylinder of the pressing block 1, and is located between the middle cylinder of the pressing block 1 and the disc spring 4, and the lower large-diameter bushing portion of the insulating bushing 3 is sleeved between the chip assembly and the side wall of the base 9; the top small-end cylinder of the pressing block 1 is formed with an external thread for screwing and installing the formed diode.

[0024] Optionally, in the crimp-type high temperature resistant diode as described above,

[0025] The crimped high temperature resistant diode generates continuous pressure on the internal chip assembly through the pre-pressure generated by its disc spring 4, which is used to ensure that during the use of the crimped high temperature resistant diode, there is sufficient pressure on the upper and lower crimping surfaces of the chip 6, thereby ensuring the crimping effect of the crimped high temperature resistant diode.

[0026] Optionally, in the crimp-type high temperature resistant diode as described above,

[0027] The bottom of the disc spring 4 is located on the end surface between the small-diameter bushing portion and the large-diameter bushing portion of the insulating bushing 3. The pre-pressure of the disc spring 4 is evenly transferred to the chip assembly through the insulating bushing 3, so that the pre-pressure of the disc spring 4 is evenly released to ensure the crimping effect of the crimped high-temperature resistant diode.

[0028] Beneficial effects of the present invention: The embodiments of the present invention provide a method for preparing a crimped high-temperature resistant diode and a crimped high-temperature resistant diode. On the one hand, the components inside the crimped high-temperature resistant diode are assembled through pressure contact, which avoids damage to the chip due to excessive temperature during welding, effectively reduces problems such as welding layer fatigue and welding voids caused by traditional welding methods, and reduces the weight of the product; on the other hand, in the preparation method of the crimped high-temperature resistant diode, the use of welding technology is reduced, the thermal resistance of the device is reduced, and the heat dissipation effect of the diode is greatly improved; the encapsulated diode includes components such as a pressing block 1, a base 9, a chip 6, and a disc spring 4. ; An insulating bushing 3 is clamped between the pressing block 1 and the base 9, so that the chip 6 and the tube shell of the base 9 are insulated from each other, and it also has the function of positioning the chip 6 and preventing the chip 6 from shaking left and right in the tube shell. The insulating bushing 3 is made of PEEK material, which is resistant to high temperature, wear and tear, and has high strength, meeting the high temperature and high mechanical stress requirements of the diode. On the other hand, considering that if the crimping method is fully adopted, excessive mechanical stress will be generated on the chip 6, which may easily cause the chip to break during the packaging process, the chip 6 in the embodiment of the present invention is formed on the upper end face of the molybdenum sheet 7 by welding, which enhances the strength of the chip 6 and ensures that the diode can still work stably under large mechanical stress. The technical solution provided by the embodiment of the present invention has the following beneficial effects:

[0029] (1) The high temperature resistant crimping diode provided by the present invention can work normally at an ambient temperature of 150°C;

[0030] (2) The crimp-type high temperature resistant crimp-type diode provided by the present invention adopts a packaging method combining crimping and welding, thereby avoiding problems such as welding layer fatigue and welding voids during complete welding packaging; and avoiding chip cracking during crimping packaging, and reducing chip loss caused by mechanical stress from 30% to 10%;

[0031] (3) The crimping type high temperature resistant crimping type diode provided by the present invention stores the crimping force in the disc spring 4 and has multiple buffer layers, which effectively reduces the damage to the chip 6 caused by the pressure;

[0032] (4) The silver sheet and the insulating bushing 3 in the crimp-type high temperature resistant crimp-type diode provided by the present invention have good ductility, which can ensure that the pressing block 1 and the chip 6, and the chip 6 and the bottom of the base 9 are in close contact when the elastic force of the disc spring 4 is relaxed;

[0033] (5) The press-fit high temperature resistant press-fit diode provided by the present invention replaces the welding package, thereby avoiding the damage to the chip 6 caused by the high temperature of welding, and also avoiding the heat dissipation problem of the solder layer and the diode failure caused by the thermal fatigue effect problem;

[0034] (6) The crimp-type high temperature resistant crimp-type diode provided by the present invention ensures the insulation between electrodes and the positioning of the chip 6 through the insulating bushing 3;

[0035] (4) The press-fit high-temperature resistant press-fit diode provided by the present invention can effectively improve the heat resistance, thermal conductivity and reliability of the device and extend its service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The accompanying drawings are used to provide a further understanding of the technical solution of the present invention and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present invention and do not constitute a limitation on the technical solution of the present invention.

[0037] Figure 1 A schematic diagram of the overall structure of a press-fit high temperature resistant diode provided in an embodiment of the present invention;

[0038] Figure 2 for Figure 1 A schematic structural diagram of a base in a press-fit type high temperature resistant diode provided in the illustrated embodiment;

[0039] Figure 3 for Figure 1 A schematic structural diagram of an insulating bushing in a crimp-type high temperature resistant diode provided in the illustrated embodiment;

[0040] Figure 4 for Figure 1 A schematic diagram of the structure of a pressure block in a press-fit type high temperature resistant diode provided in the illustrated embodiment;

[0041] Figure 5 for Figure 1 The illustrated embodiment is a schematic half-section diagram of a crimped high temperature resistant diode. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the present invention more clear, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiments and features in the embodiments of the present application can be combined with each other arbitrarily without conflict.

[0043] As described in the above background technology, the current diode packaging methods mainly include welding packaging and press-fit packaging. However, the existing welding packaging and press-fit packaging diodes cannot meet the requirements of stable operation under large mechanical stress and application in high temperature environments.

[0044] In order to solve the above problems, the embodiments of the present invention provide a method for preparing a crimped high-temperature resistant diode and a crimped high-temperature resistant diode. The semiconductor chip is packaged through a crimping process. The diode packaged in the above manner can still work stably under large mechanical stress. It is suitable for transformers or rectifier components in high-temperature environments, and can be used stably for a long time in high-temperature and high-mechanical stress environments.

[0045] The present invention provides the following specific embodiments which can be combined with each other. The same or similar concepts or processes may not be described in detail in some embodiments.

[0046] An embodiment of the present invention provides a method for preparing a press-fit high temperature resistant diode, and the method for preparing the press-fit high temperature resistant diode comprises the following steps:

[0047] Step 1, preparing a base 9 for encapsulating the diode chip 6, wherein the base 9 is a cylindrical structure with one end open, an annular groove is formed on the bottom end surface of the base 9 along the cylindrical side wall, and a hemispherical groove is formed at the center of the bottom end surface;

[0048] Step 2, welding the chip 6 to the upper end surface of the molybdenum sheet 7 by welding, and sequentially placing the second silver sheet 8, the chip 6 and the molybdenum sheet 7 formed into an integral structure after welding, the first silver sheet 5 and the pressing block 1 on the bottom end surface of the base 9;

[0049] Step 3, sleeve the insulating bushing 3 on the pressing block 1, the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8 to position and form a structure to be crimped, and the insulating bushing 3 is also used to isolate the side wall of the chip assembly formed by the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8 from the base 9;

[0050] Step 4, a disc spring 4 is sleeved around the top circumference of the insulating bushing 3, and pressure is applied to the top of the side wall of the base 9 through a special crimping tool, so that the top of the side wall is bent inward and crimped to the edge of the disc spring 4;

[0051] Step 5: Silicon rubber is coated in the annular cavity between the side wall of the base 9 shell and the pressing block 1 after crimping to form a silicone rubber coating 2 to form a packaging structure of the diode.

[0052] In one implementation of the embodiment of the present invention, the insulating bushing 3 is configured as a two-stage stepped bushing, the upper small-diameter bushing portion of the insulating bushing 3 is sleeved on the pressure block 1, and is located between the pressure block 1 and the disc spring 4, and the lower large-diameter bushing portion is sleeved between the chip assembly formed by the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8 and the side wall of the base 9 shell.

[0053] In one implementation of the embodiment of the present invention, in the above step 1, the annular groove and the hemispherical groove formed are used to release the stress on the chip 6, and the annular groove also ensures that the insulating bushing 3 completely isolates the chip 6 from the side wall of the base 9 when the insulating bushing 3 is installed.

[0054] In an implementation of the embodiment of the present invention, the above step 1 further includes: forming a plurality of concentrically arranged annular grooves on the inner bottom end surface of the base 9 .

[0055] Based on the method for preparing a press-fit high temperature resistant diode provided in the above embodiment of the present invention, the embodiment of the present invention also provides a press-fit high temperature resistant diode prepared by the method for preparing a press-fit high temperature resistant diode provided in any of the above embodiments. Figure 1 FIG. 1 is a schematic diagram of the overall structure of a press-fit high temperature resistant diode provided by an embodiment of the present invention. Figure 1 The cross-sectional view of the crimped high temperature resistant diode is shown in FIG. The crimped high temperature resistant diode comprises: a pressing block 1, a silicone rubber coating 2, an insulating bushing 3, a disc spring 4, a first silver sheet 5, a chip 6, a molybdenum sheet 7, a second silver sheet 8 and a base 9. Figure 2 for Figure 1 The schematic diagram of the structure of the base of the crimp-type high temperature resistant diode provided in the embodiment shown, Figure 3 for Figure 1 The schematic diagram of the structure of the insulating bushing in the crimped high temperature resistant diode provided by the embodiment shown, Figure 4 for Figure 1 A schematic diagram of the structure of a pressure block in a press-fit type high temperature resistant diode provided in the illustrated embodiment; Figure 5 for Figure 1 The illustrated embodiment is a schematic half-section diagram of a crimped high temperature resistant diode.

[0056] like Figures 1 to 5 In the structure of the crimped high temperature resistant diode shown, the base 9 is set as a cylindrical structure with one end open, and the bottom end surface of the inner cylinder is formed with an annular groove along the cylindrical side wall, and a hemispherical groove is formed in the center of the bottom end surface. In the embodiment of the present invention, the second silver sheet 8, the chip 6 and the molybdenum sheet 7 are welded to form an integrated structure, and the first silver sheet 5 and the pressing block 1 are placed on the bottom end surface of the base 9 in sequence. The insulating bushing 3 in the embodiment of the present invention is sleeved on the outside of the pressing block 1, the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8, and is used to position the structure to be crimped, and to isolate the chip assembly formed by the first silver sheet 5, the chip 6, the molybdenum sheet 7 and the second silver sheet 8 from the side wall of the base 9.

[0057] In the embodiment of the present invention, the disc spring 4 is sleeved on the outside of the top end of the insulating bushing 3, and the top of the side wall of the base 9 is crimped to form the top of the side wall so that the top of the side wall is bent inward and crimped to the edge of the circumference of the disc spring 4, so that the disc spring 4 generates pre-pressure; the silicone rubber coating 2 is formed by coating silicone rubber in the annular concave cavity between the side wall of the base 9 shell and the pressure block 1 after crimping.

[0058] In one implementation of the embodiment of the present invention, Figure 4 The pressing block 1 shown is set as a three-step structure; accordingly, Figure 3 As shown, the insulating bushing 3 is set as a two-stage stepped bushing. The bottom large end cylinder of the pressing block 1 is integrally pressed on the chip assembly, the upper small diameter bushing part of the insulating bushing 3 is sleeved on the outer periphery of the middle cylinder of the pressing block 1 and is located between the middle cylinder of the pressing block 1 and the disc spring 4, and the lower large diameter bushing part of the insulating bushing 3 is sleeved between the chip assembly and the side wall of the base 9; the top small end cylinder of the pressing block 1 is formed with an external thread for screwing and installing the formed diode.

[0059] In one implementation of the embodiment of the present invention, the crimped high temperature resistant diode generates continuous pressure on the internal chip component through the pre-pressure generated by its disc spring 4, which is used to ensure that during the use of the crimped high temperature resistant diode, there is sufficient pressure on the upper and lower crimping surfaces of the chip 6, thereby ensuring the crimping effect of the crimped high temperature resistant diode.

[0060] In one implementation of the embodiment of the present invention, the bottom of the disc spring 4 is located on the end face between the small-diameter bushing portion and the large-diameter bushing portion of the insulating bushing 3, and the pre-pressure of the disc spring 4 is evenly transferred to the chip assembly through the insulating bushing 3, so that the pre-pressure of the disc spring 4 is evenly released to ensure the crimping effect of the crimped high-temperature resistant diode.

[0061] The preparation method of the press-fit high-temperature resistant diode and the press-fit high-temperature resistant diode provided by the embodiments of the present invention, on the one hand, the components inside the press-fit high-temperature resistant diode are assembled by pressure contact, which avoids damage to the chip due to excessive temperature during welding, effectively reduces the problems of welding layer fatigue and welding voids caused by traditional welding methods, and reduces the weight of the product; on the other hand, in the preparation method of the press-fit high-temperature resistant diode, the use of welding process is reduced, the thermal resistance of the device is reduced, and the heat dissipation effect of the diode is greatly improved; the encapsulated diode includes components such as a pressing block 1, a base 9, a chip 6, and a disc spring 4; in the pressing block 1 and An insulating bushing 3 is sandwiched between the base 9, which insulates the chip 6 and the tube shell of the base 9 from each other and also has the function of positioning the chip 6 and preventing the chip 6 from shaking left and right in the tube shell. The insulating bushing 3 is made of PEEK material, which is resistant to high temperature, wear and tear, and has high strength, meeting the high temperature and high mechanical stress requirements of the diode. On the other hand, considering that if the crimping method is fully adopted, excessive mechanical stress will be generated on the chip 6, which may easily cause the chip to break during the packaging process, the chip 6 in the embodiment of the present invention is formed on the upper end face of the molybdenum sheet 7 by welding, which enhances the strength of the chip 6 and ensures that the diode can still work stably under large mechanical stress. The technical solution provided by the embodiment of the present invention has the following beneficial effects:

[0062] (1) The high temperature resistant crimping diode provided by the present invention can work normally at an ambient temperature of 150°C;

[0063] (2) The crimp-type high temperature resistant crimp-type diode provided by the present invention adopts a packaging method combining crimping and welding, thereby avoiding problems such as welding layer fatigue and welding voids during complete welding packaging; and avoiding chip cracking during crimping packaging, and reducing chip loss caused by mechanical stress from 30% to 10%;

[0064] (3) The crimping type high temperature resistant crimping type diode provided by the present invention stores the crimping force in the disc spring 4 and has multiple buffer layers, which effectively reduces the damage to the chip 6 caused by the pressure;

[0065] (4) The silver sheet and the insulating bushing 3 in the crimp-type high temperature resistant crimp-type diode provided by the present invention have good ductility, which can ensure that the pressing block 1 and the chip 6, and the chip 6 and the bottom of the base 9 are in close contact when the elastic force of the disc spring 4 is relaxed;

[0066] (5) The press-fit high temperature resistant press-fit diode provided by the present invention replaces the welding package, thereby avoiding the damage to the chip 6 caused by the high temperature of welding, and also avoiding the heat dissipation problem of the solder layer and the diode failure caused by the thermal fatigue effect problem;

[0067] (6) The crimp-type high temperature resistant crimp-type diode provided by the present invention ensures the insulation between electrodes and the positioning of the chip 6 through the insulating bushing 3;

[0068] (4) The press-fit high-temperature resistant press-fit diode provided by the present invention can effectively improve the heat resistance, thermal conductivity and reliability of the device and extend its service life.

[0069] The following is an example of an implementation to illustrate the preparation method of the press-fit high temperature resistant diode and the implementation effect of the press-fit high temperature resistant diode provided by the embodiment of the present invention:

[0070] like Figures 1 to 5 As shown, this implementation case adopts the preparation method of the crimped high temperature resistant diode provided in the above embodiment to prepare a crimped high temperature resistant diode, and the crimping structure of the crimped high temperature resistant diode mainly includes: a base 9, a disc spring 4, a pressing block 1 and an insulating bushing 3. Among them, the chip 6 is fully in contact with the upper and lower crimping surfaces through the pressure of the deformation of the disc spring 4, and the positioning effect of the insulating bushing 3 ensures that the position of the chip 6 is fixed, so that the diode works stably.

[0071] The base 9 is a hollow cylinder with a cylindrical protrusion inside, and the outer side of the base 9 is thin-walled and can be bent and squeezed inward; the pressure block 1 is a combination of multiple sections of metal cylinders, the bottom of which is connected to the chip 6, the top is bolted and connected to the electrode, and the middle is embedded in the insulating bushing 3 to ensure the insulation between the top of the pressure block 1 and the base 9; the insulating bushing 3 is made of PEEK material, which is resistant to high temperature, wear and high strength, and meets the high temperature and high mechanical stress requirements of the diode; the upper surface of the insulating bushing 3 is a disc spring 4, and the deformation pressure of the disc spring 4 ensures that the pressure block 1 and the chip 6, and the chip 6 and the bottom of the base 9 are in close contact.

[0072] When the top of the side wall of the base 9 bends inward, downward pressure is generated, which generates pressure on the disc spring 4 and stores the pressure in the disc spring 4, that is, the disc spring 4 generates pre-pressure. The disc spring 4 generates pre-pressure, which can generate continuous pressure on the internal chip assembly and ensure that the upper and lower crimping surfaces of the chip 6 can have sufficient pressure during use to ensure the crimping effect of the crimping diode.

[0073] The pre-pressure of the disc spring 4 is uniformly transmitted to the chip 6 through the insulating bushing 3, so that the pressure stored in the disc spring 4 is released more uniformly, thereby ensuring the crimping effect of the crimping diode.

[0074] The function of the insulating bushing 3 is to ensure the insulation between the base 9 and the top of the pressing block 1, and to fix the position of the chip to prevent it from shifting during the crimping process.

[0075] Although the embodiments disclosed in the present invention are as above, the contents are only embodiments adopted to facilitate understanding of the present invention and are not intended to limit the present invention. Any technician in the field to which the present invention belongs can make any modifications and changes in the form and details of implementation without departing from the spirit and scope disclosed in the present invention, but the patent protection scope of the present invention shall still be subject to the scope defined in the attached claims.

Claims

1. A method for preparing a crimped high temperature resistant diode, characterized in that: include: Step 1, preparing a base (9) for encapsulating a diode chip (6), wherein the base (9) is a cylindrical structure with one end open, an annular groove is formed on the bottom end surface of the base (9) along the cylindrical side wall, and a hemispherical groove is formed at the center of the bottom end surface; Step 2, welding the chip (6) to the upper end surface of the molybdenum sheet (7) by welding, and sequentially placing the second silver sheet (8), the chip (6) and the molybdenum sheet (7) formed into an integral structure after welding, the first silver sheet (5) and the pressing block (1) on the bottom end surface of the base (9); Step 3, sleeve the insulating bushing (3) on the pressing block (1), the first silver sheet (5), the chip (6), the molybdenum sheet (7) and the second silver sheet (8) to position and form a structure to be crimped, and the insulating bushing (3) is also used to isolate the side wall of the chip assembly formed by the first silver sheet (5), the chip (6), the molybdenum sheet (7) and the second silver sheet (8) from the base (9); Step 4, a disc spring (4) is sleeved around the top circumference of the insulating bushing (3), and pressure is applied to the top of the side wall of the base (9) by a special crimping tool, so that the top of the side wall is bent inward and crimped to the edge of the disc spring (4); Step 5, coating silicone rubber in the annular cavity between the side wall of the base (9) shell and the pressing block (1) after crimping to form a silicone rubber coating (2) to form a diode packaging structure.

2. The method for preparing a crimp-type high temperature resistant diode according to claim 1, characterized in that: The insulating bushing (3) is configured as a two-stage stepped bushing, wherein the upper small-diameter bushing portion of the insulating bushing (3) is sleeved on the pressure block (1) and is located between the pressure block (1) and the disc spring (4), and the lower large-diameter bushing portion is sleeved between the chip assembly formed by the first silver sheet (5), the chip (6), the molybdenum sheet (7) and the second silver sheet (8) and the side wall of the base (9) shell.

3. The method for preparing a crimp-type high temperature resistant diode according to claim 1, characterized in that: In step 1, the annular groove and the hemispherical groove formed are used to release stress on the chip (6), and the annular groove also ensures that the insulating bushing (3) completely isolates the chip (6) from the side wall of the base (9) when the insulating bushing (3) is installed.

4. The method for preparing a crimp-type high temperature resistant diode according to claim 3, characterized in that: The step 1 also includes: forming a plurality of concentrically arranged annular grooves on the inner bottom end surface of the base (9).

5. A crimp-type high temperature resistant diode, characterized in that: The press-fit high temperature resistant diode is formed by using the preparation method of the press-fit high temperature resistant diode provided by any one of claims 1 to 4.

6. The crimp-type high temperature resistant diode according to claim 5, characterized in that: include: A pressing block (1), a silicone rubber coating (2), an insulating bushing (3), a disc spring (4), a first silver sheet (5), a core sheet (6), a molybdenum sheet (7), a second silver sheet (8) and a base (9); The base (9) is configured as a cylindrical structure with one end open, the inner bottom surface of the cylinder is formed with an annular groove along the cylindrical side wall, and the center of the bottom surface is formed with a hemispherical groove; the second silver sheet (8), the chip (6) and the molybdenum sheet (7) are welded to form an integrated structure, and the first silver sheet (5) and the pressing block (1) are sequentially placed on the bottom surface of the base (9); and the insulating bushing (3) is sleeved on the outside of the pressing block (1), the first silver sheet (5), the chip (6), the molybdenum sheet (7) and the second silver sheet (8) for positioning to form a structure to be crimped, and for isolating the chip assembly formed by the first silver sheet (5), the chip (6), the molybdenum sheet (7) and the second silver sheet (8) from the side wall of the base (9); The disc spring (4) is sleeved on the outside of the top end of the insulating bushing (3), and the top of the side wall of the base (9) is crimped to form a molding method so that the top of the side wall is bent inward and crimped to the edge of the circumference of the disc spring (4), so that the disc spring (4) generates pre-pressure; and a silicone rubber coating (2) is formed by coating silicone rubber in the annular concave cavity between the side wall of the base (9) shell and the pressure block (1) after crimping.

7. The crimp-type high temperature resistant diode according to claim 6, characterized in that: The pressing block (1) is configured as a three-step structure, and the insulating bushing (3) is configured as a two-step bushing. The bottom large-end column of the pressing block (1) is integrally pressed onto the chip assembly, the upper small-diameter bushing portion of the insulating bushing (3) is sleeved on the outer periphery of the middle column of the pressing block (1) and is located between the middle column of the pressing block (1) and the disc spring (4), and the lower large-diameter bushing portion of the insulating bushing (3) is sleeved between the chip assembly and the side wall of the base (9); the top small-end column of the pressing block (1) is formed with an external thread for screwing and mounting the formed diode.

8. The crimp-type high temperature resistant diode according to claim 7, characterized in that: The crimping type high temperature resistant diode generates a pre-pressure through its disc spring (4) to generate a continuous pressure on the internal chip component, so as to ensure that during the use of the crimping type high temperature resistant diode, the upper and lower crimping surfaces of the chip (6) have sufficient pressure, thereby ensuring the crimping effect of the crimping type high temperature resistant diode.

9. The crimp-type high temperature resistant diode according to claim 7, characterized in that: The bottom of the disc spring (4) is located on the end surface between the small-diameter bushing portion and the large-diameter bushing portion of the insulating bushing (3), and the pre-pressure of the disc spring (4) is evenly transmitted to the chip assembly through the insulating bushing (3), so that the pre-pressure of the disc spring (4) is evenly released to ensure the crimping effect of the crimp-type high-temperature resistant diode.

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