Measuring mirror mechanism for wafer laser positioning and adjusting method of measuring mirror mechanism

Abstract

The invention discloses a measuring mirror mechanism for wafer laser positioning and an adjusting method of the measuring mirror mechanism. The measuring mirror mechanism for wafer laser positioning comprises: a mounting plate having a mounting surface; the measuring mirror is arranged on the mounting surface and is provided with a reflecting surface for reflecting the laser; the vertical adjustment connecting piece comprises a vertical limiting part and a vertical connecting part; in the direction perpendicular to the mounting surface, the vertical connecting part penetrates through the measuring mirror and is movably connected with the mounting plate; the vertical resetting piece is arranged between the measuring mirror and the mounting surface and is used for applying an acting force to the measuring mirror, so that the measuring mirror is propped against the vertical limiting part; and the positioning support piece is clamped between the mounting plate and the measuring mirror and is used for fixing the relative positions of the mounting plate and the measuring mirror. According to the measuring mirror mechanism for wafer laser positioning and the adjusting method of the measuring mirror mechanism, the measuring mirror can be adjusted and calibrated in real time.

Description

Technical Field

[0001] The present application relates to the field of laser positioning technology, and in particular to a measuring mirror mechanism for wafer laser positioning and a method for adjusting the measuring mirror mechanism. Background Art

[0002] With the development of semiconductor technology and the advancement of process technology, the line width of integrated circuits is becoming increasingly finer, and higher and more difficult requirements are also put forward for the production process technology of circuits. At the same time, semiconductor foundries have put forward higher requirements for semiconductor equipment in order to reduce costs and increase efficiency, improve production efficiency, and improve the utilization rate of clean rooms. In the manufacture of semiconductor lenses, orthogonal laser positioning (XY stage laser positioning) is used to position the moving carrier in real time. Before laser positioning, the measuring mirror needs to be fixed and adjusted. It is generally adopted to directly bond the measuring mirror to the measuring mirror mounting plate through an adhesive, and the X-axis laser irradiates the X-axis measuring mirror, and the Y-axis laser irradiates the Y-axis measuring mirror. Since the carrier is positioned in a vacuum environment, the volatility and shrinkage of the adhesive itself are extremely high, otherwise it will affect the bonding accuracy and stability, and it is difficult to adjust the measuring mirror after the adhesive is deformed. Summary of the invention

[0003] The embodiments of the present application provide a measuring mirror mechanism for wafer laser positioning and a method for adjusting the measuring mirror mechanism, which can adjust and calibrate the measuring mirror in real time.

[0004] In the first aspect, an embodiment of the present application provides a measuring mirror mechanism for wafer laser positioning, comprising: a mounting plate having a mounting surface; a measuring mirror arranged on the mounting surface, the measuring mirror having a reflective surface for reflecting laser; a vertical adjustment connector, the vertical adjustment connector comprising a vertical limit portion and a vertical connection portion; the vertical connection portion passes through the measuring mirror along a direction perpendicular to the mounting surface and is movably connected to the mounting plate to adjust the distance between the vertical limit portion and the mounting surface; a vertical reset member arranged between the measuring mirror and the mounting surface, the vertical reset member exerts a force on the measuring mirror to move the measuring mirror away from the mounting surface and abut against the vertical limit portion; at least one positioning support member clamped between the mounting plate and the measuring mirror, for fixing the relative position of the mounting plate and the measuring mirror.

[0005] According to an embodiment of the first aspect of the present application, at least a portion of the positioning support is embedded in the mounting surface, and / or at least a portion of the positioning support is embedded in the measuring mirror, for fixing the relative position of the mounting plate and the measuring mirror along a direction parallel to the mounting surface.

[0006] According to an embodiment of the first aspect of the present application, the mounting plate also includes a positioning support member mounting portion, which protrudes from the mounting surface; the positioning support member mounting portion is located on the side of the measuring mirror opposite to the reflecting surface; at least one positioning support is arranged between the measuring mirror and the positioning support member mounting portion, at least a portion of the positioning support is embedded in the positioning support member mounting portion, and / or at least a portion of the positioning support is embedded in the measuring mirror, for fixing the relative position of the mounting plate and the measuring mirror along a direction perpendicular to the mounting surface.

[0007] According to an embodiment of the first aspect of the present application, the measuring mirror is provided with a through hole, the vertical connecting part passes through the through hole, and is threadedly connected to the mounting plate; the vertical resetting member is sleeved on the vertical connecting part, and a clearance space is provided on the side of the mounting plate facing the measuring mirror, and / or a clearance space is provided on the side of the measuring mirror facing the mounting plate; at least a portion of the vertical resetting member is located in the clearance space.

[0008] According to an embodiment of the first aspect of the present application, the vertical return member includes one of a column spring, a disc spring and a rubber pad.

[0009] According to an embodiment of the first aspect of the present application, the number of vertical adjustment connectors is at least three; on the installation surface, the centers of the orthographic projections of at least three vertical adjustment connectors are not collinear.

[0010] According to an embodiment of the first aspect of the present application, the measuring mirror includes a first sub-mirror and a second sub-mirror, and a reflecting surface of the first sub-mirror is perpendicular to a reflecting surface of the second sub-mirror.

[0011] According to an embodiment of the first aspect of the present application, the mounting plate also includes a transverse adjustment member mounting portion, which protrudes from the mounting surface; the transverse adjustment member mounting portion is located on the side of the measuring mirror opposite to the reflecting surface; the measuring mirror mechanism for wafer laser positioning also includes a transverse adjustment connector and a transverse reset member; the transverse adjustment connector includes a transverse limiting portion and a transverse connecting portion; along the direction perpendicular to the reflecting surface, the transverse connecting portion passes through the transverse adjustment member mounting portion, and the transverse connecting portion is movably connected to the measuring mirror to adjust the distance between the transverse limiting portion and the measuring mirror; at least a portion of the transverse limiting portion is located on the side of the transverse adjustment member mounting portion away from the measuring mirror; the transverse reset member is arranged between the measuring mirror and the transverse adjustment member mounting portion, and the transverse reset member applies a force to the transverse adjustment member mounting portion to make the transverse adjustment member mounting portion move away from the measuring mirror and abut against the transverse limiting portion.

[0012] According to the embodiment of the first aspect of the present application, the mounting portion of the lateral adjustment member is provided with a through hole, and the lateral connecting portion passes through the through hole; the measuring mirror is provided with a hollow portion, and at least a portion of the lateral connecting portion passes through the hollow portion; the measuring mirror mechanism for wafer laser positioning also includes a limit connecting member, which is arranged in the hollow portion, and the limit connecting member is threadedly connected to the lateral connecting portion; the lateral reset member is sleeved on the lateral connecting portion.

[0013] According to an embodiment of the first aspect of the present application, the lateral return member includes one of a column spring, a disc spring and a rubber pad.

[0014] In a second aspect, a method for adjusting a measuring mirror mechanism uses the measuring mirror mechanism for wafer laser positioning of the embodiment of the first aspect of the present application; the method for adjusting the measuring mirror mechanism comprises: irradiating a laser on a reflective surface of the measuring mirror and obtaining detection parameters of the reflected laser, wherein the detection parameters include intensity information of the detected reflected laser; adjusting a vertical adjustment connector to allow relative movement between the vertical adjustment connector and the mounting plate until the detection parameters are within a preset parameter range.

[0015] According to an embodiment of the second aspect of the present application, the measuring mirror includes a first sub-mirror and a second sub-mirror; a laser is made to irradiate a reflective surface of the measuring mirror, and detection parameters of the reflected laser are obtained, the detection parameters including intensity information of the detected reflected laser, including: a first laser is made to irradiate the reflective surface of the first sub-mirror along a first direction, and a first detection parameter of the reflected first laser is obtained, the first detection parameter including intensity information of the reflected first laser along a direction perpendicular to the mounting surface; a second laser is made to irradiate the reflective surface of the second sub-mirror along a second direction, and a second detection parameter of the reflected second laser is obtained, the second detection parameter including intensity information of the reflected second laser along a direction perpendicular to the mounting surface; the first direction and the second direction are perpendicular; and a vertical adjustment connector is adjusted to make the vertical adjustment connector and the mounting plate move relative to each other until the detection parameter is within a preset parameter range, including: adjusting the vertical adjustment connector connected to the first sub-mirror to make the first sub-mirror and the mounting plate move relative to each other until the first detection parameter is within the preset parameter range; adjusting the vertical adjustment connector connected to the second sub-mirror to make the second sub-mirror and the mounting plate move relative to each other until the second detection parameter is within the preset parameter range.

[0016] According to an embodiment of the second aspect of the present application, the mounting plate also includes a transverse adjustment member mounting portion, which protrudes from the mounting surface; the transverse adjustment member mounting portion is located on the side of the measuring mirror opposite to the reflecting surface; the measuring mirror mechanism for wafer laser positioning also includes a transverse adjustment connector and a transverse reset member; the transverse adjustment connector includes a transverse limiting portion and a transverse connecting portion; along the direction perpendicular to the reflecting surface, the transverse connecting portion passes through the transverse adjustment member mounting portion, and the transverse connecting portion is movably connected to the measuring mirror to adjust the distance between the transverse limiting portion and the measuring mirror; at least a part of the transverse limiting portion is located on the side of the transverse adjustment member mounting portion away from the measuring mirror; the transverse reset member is arranged between the measuring mirror and the transverse adjustment member mounting portion, and the transverse reset member applies a force to the transverse adjustment member mounting portion to make the transverse adjustment member mounting portion move away from the measuring mirror and abut against the transverse limiting portion; the laser is irradiated on the reflecting surface of the measuring mirror, and a reflection is obtained. The method further comprises: making the first laser irradiate the reflecting surface of the first sub-mirror along the first direction to obtain the third detection parameter of the reflected first laser, the third detection parameter includes the intensity information of the reflected first laser along the direction parallel to the mounting surface; making the second laser irradiate the reflecting surface of the second sub-mirror along the second direction to obtain the fourth detection parameter of the reflected second laser, the fourth detection parameter includes the intensity information of the reflected second laser along the direction parallel to the mounting surface; the calibration method of the measuring mirror mechanism further comprises: adjusting the lateral adjustment connector connected to the first sub-mirror to make the lateral adjustment connector and the first sub-mirror move relative to each other, and / or adjusting the lateral adjustment connector connected to the second sub-mirror to make the lateral adjustment connector and the second sub-mirror move relative to each other, until the third detection parameter and the fourth detection parameter are both within the preset parameter range.

[0017] In the measuring mirror mechanism and the adjustment method of the measuring mirror mechanism for wafer laser positioning provided by the embodiment of the present application, the measuring mirror is arranged on the mounting surface of the mounting plate, the vertical connection part of the vertical adjustment connector passes through the measuring mirror and is connected to the mounting plate, and is in contact with the vertical limit part, and the positioning support is clamped between the mounting plate and the measuring mirror, which can fix the relative position of the mounting plate and the measuring mirror. When the reflective surface of the measuring mirror is not perpendicular to the mounting surface of the mounting plate, the vertical adjustment connector can be adjusted so that the vertical adjustment connector and the mounting plate move relative to each other. Under the action of the vertical reset member arranged between the measuring mirror and the mounting surface, the measuring mirror and the vertical limit part are kept in contact, thereby adjusting the distance between the measuring mirror and the mounting surface. In this process, the positioning support can be used as a fulcrum for adjusting the measuring mirror. In combination with the vertical adjustment connector, the distance between the measuring mirror and the mounting surface is adjusted, thereby more accurately and reliably adjusting the posture of the measuring mirror relative to the mounting surface, so that the reflective surface is perpendicular to the mounting surface. In the embodiment of the present application, the measuring mirror and the mounting plate are non-bonded, which reduces the impact on the detection or processing of semiconductor wafers in a hollow environment. The reflective surface of the measuring mirror and the mounting surface of the mounting plate can be adjusted in real time to keep the two in a vertical state. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 It is a structural schematic diagram of a measuring mirror mechanism in the related technology.

[0020] Figure 2 A schematic diagram of the structure of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application.

[0021] Figure 3 A schematic diagram of the structure of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application along a direction perpendicular to the mounting surface.

[0022] Figure 4 for Figure 3 A cross-sectional view of the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application at section AA.

[0023] Figure 5 Another structural schematic diagram of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application.

[0024] Figure 6This is another schematic diagram of the structure of the measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application along a direction perpendicular to the mounting surface.

[0025] Figure 7 for Figure 6 A cross-sectional view of the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application at section BB.

[0026] Figure 8 for Figure 6 A cross-sectional view of the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application at section BB.

[0027] Fig. 9 This is another schematic diagram of the structure of the measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application along a direction perpendicular to the mounting surface.

[0028] Fig.10 Another structural schematic diagram of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application.

[0029] Fig.11 Another structural schematic diagram of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application.

[0030] Fig.12 This is another schematic diagram of the structure of the measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application along a direction perpendicular to the mounting surface.

[0031] Fig.13 for Fig.12 A cross-sectional view of the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application at the CC section.

[0032] Fig.14 A schematic flow chart of a method for calibrating a measuring mirror mechanism according to an embodiment of the present application.

[0033] Fig.15 A schematic diagram of the arrangement of a laser and a measuring mirror mechanism for wafer laser positioning in a calibration method of a measuring mirror mechanism in an embodiment of the present application.

[0034] Reference numerals:

[0035] 1. Mounting plate; 11. Mounting surface; 12. Positioning support mounting portion; 13. Lateral adjustment mounting portion;

[0036] 2. measuring mirror; 2a. first sub-mirror; 2b. second sub-mirror; 21. reflecting surface;

[0037] 3. Vertical adjustment connector; 31. Vertical connection portion; 32. Vertical limit portion;

[0038] 41. vertical reset member; 42. horizontal reset member;

[0039] 5. Positioning support parts;

[0040] 6. lateral adjustment connector; 61. lateral connection portion; 62. lateral limit portion;

[0041] 7. Limiting connector;

[0042] X, first direction; Y, second direction; R1, first laser; R2, second laser. DETAILED DESCRIPTION

[0043] The features and exemplary embodiments of various aspects of the application will be described in detail below. In the detailed description below, many specific details are proposed to provide a comprehensive understanding of the application. However, it is obvious to those skilled in the art that the application can be implemented when some details in these specific details are not needed. The following description of the embodiments is only to provide a better understanding of the application by illustrating the example of the application.

[0044] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The embodiments will be described in detail below in conjunction with the accompanying drawings.

[0045] Relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device that includes a series of elements includes not only those elements, but also other elements that are not explicitly listed, or also includes elements that are inherent to such process, method, article, or device. In the absence of further restrictions, the elements defined by the statement "comprising ..." do not exclude the presence of additional identical elements in the process, method, article, or device that includes the elements.

[0046] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean that it is directly on the other layer or another region, or that other layers or regions are included between it and the other layer or another region. Moreover, if the component is turned over, the layer or a region will be "below" or "beneath" another layer or another region.

[0047] In addition, the term "and / or" in this article is only a description of the association relationship between the associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0048] It should be understood that in the embodiment of the present application, "B corresponding to A" means that B is associated with A, and B can be determined according to A. However, it should also be understood that determining B according to A does not mean determining B only according to A, and B can also be determined according to A and / or other information.

[0049] The applicant has found that in the process of producing and testing semiconductor wafers, under the premise of using orthogonal laser positioning (XYstage laser positioning) to position the moving carrier in real time, a measuring mirror is set on the mounting plate, and then the mounting plate is mounted on the moving mechanism of the carrier (usually using an orthogonal method to drive the mounting plate to move). Figure 1 , under the premise of ensuring that the reflective surface of the measuring mirror is perpendicular to the mounting surface of the mounting plate, the measuring mirror and the mounting plate are fixed by bonding. Considering that it is usually used in a vacuum environment, the physical and chemical properties of the adhesive (such as solidification rate, volatility, shrinkage, etc.) may affect the bonding efficiency, bonding precision, detection accuracy, etc., and once the adhesive solidifies and deforms, it is difficult to adjust the orthogonality between the measuring mirror and the mounting plate.

[0050] In view of the above analysis, an embodiment of the present application provides a measuring mirror mechanism for wafer laser positioning and a method for adjusting the measuring mirror mechanism. The measuring mirror mechanism for wafer laser positioning includes a mounting plate, a measuring mirror, a vertical adjustment connector, a vertical reset member and at least one positioning support member. The measuring mirror is arranged on the mounting surface of the mounting plate, the vertical connection portion of the vertical adjustment connector passes through the measuring mirror and is connected to the mounting plate, and abuts against the vertical limit portion, and the positioning support member is clamped between the mounting plate and the measuring mirror, and can fix the relative position of the mounting plate and the measuring mirror. When the reflective surface of the measuring mirror is not perpendicular to the mounting surface of the mounting plate, the vertical adjustment connector can be adjusted so that the vertical adjustment connector and the mounting plate move relative to each other. Under the action of the vertical reset member arranged between the measuring mirror and the mounting surface, the measuring mirror and the vertical limit portion remain in abutment, thereby adjusting the distance between the measuring mirror and the mounting surface. In this process, the positioning support can be used as a fulcrum for adjusting the measuring mirror. In combination with the vertical adjustment connector, the distance between the measuring mirror and the mounting surface can be adjusted, thereby more accurately and reliably adjusting the posture of the measuring mirror relative to the mounting surface so that the reflecting surface is perpendicular to the mounting surface. In the embodiment of the present application, the measuring mirror and the mounting plate are non-bonded, which reduces the impact on the detection or processing of semiconductor wafers in a hollow environment, and the reflecting surface of the measuring mirror and the mounting surface of the mounting plate can be adjusted in real time to keep the two in a vertical state.

[0051] Figure 2 A schematic diagram of the structure of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application. Figure 3 A schematic diagram of the structure of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application along a direction perpendicular to the mounting surface. Figure 4 for Figure 3 A cross-sectional view of the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application at section AA.

[0052] See also Figures 2 to 4 The embodiment of the present application provides a measuring mirror mechanism for wafer laser positioning, comprising: a mounting plate 1, a measuring mirror 2, a vertical adjustment connector 3, a vertical reset member 41 and at least one positioning support member 5. The mounting plate 1 has a mounting surface 11; the measuring mirror 2 is arranged on the mounting surface 11, and the measuring mirror 2 has a reflection surface 21 for reflecting laser light; the vertical adjustment connector 3 comprises a vertical limit portion 32 and a vertical connection portion 31; along the direction perpendicular to the mounting surface 11, the vertical connection portion 31 penetrates the measuring mirror 2, and the vertical connection portion 31 is movably connected and movably connected to the mounting plate 1 to adjust the distance between the vertical limit portion 32 and the mounting surface 11; the vertical reset member 41 is arranged between the measuring mirror 2 and the mounting surface 11, and the vertical reset member 41 applies a force to the measuring mirror 2 so that the measuring mirror 2 is away from the mounting surface 11 and abuts against the vertical limit portion 32; the positioning support member 5 is sandwiched between the mounting plate 1 and the measuring mirror 2, and is used to fix the relative position of the mounting plate 1 and the measuring mirror 2.

[0053] The mounting plate 1 is used as a mounting carrier for the measuring mirror 2, and other components of the embodiment of the present application are also directly or indirectly connected to the mounting plate 1, and the measuring mirror 2 is arranged on the mounting surface 11 of the mounting plate 1. Under ideal conditions, the reflecting surface 21 should be perpendicular to the mounting surface 11. If the reflecting surface 21 and the mounting surface 11 are not perpendicular, the reflecting surface 21 and the mounting surface 11 can be made perpendicular by adjusting some components of the embodiment of the present application. It should be noted that in the process of adjusting the posture of the reflecting surface 21 relative to the mounting surface 11 so that the two are perpendicular, it is equivalent to adjusting the vertical angle between the reflecting surface 21 and the mounting surface 11, that is, the angle between the reflecting surface 21 and the normal of the mounting surface 11.

[0054] The vertical adjustment connector 3 includes a vertical limiting portion 32 and a vertical connecting portion 31, and the vertical adjustment connector 3 can be obtained by a fixed connection or an integral molding method. The vertical connecting portion 31 passes through the measuring mirror 2 and is connected to the mounting plate 1. The vertical reset member 41 disposed between the measuring mirror 2 and the mounting surface 11 will exert a force on the mounting surface 11 and the measuring mirror 2, so that the measuring mirror 2 has a tendency to move away from the mounting surface 11, and at least a part of the vertical limiting portion 32 is located on the side of the measuring mirror 2 away from the mounting plate 1, so that the measuring mirror 2 abuts against the vertical limiting portion 32. Therefore, when the relative position of the vertical connecting portion 31 and the mounting plate 1 remains unchanged, the measuring mirror 2 and the mounting plate 1 can be fixed. At the same time, the positioning support member 5 clamped between the mounting plate 1 and the measuring mirror 2 limits the mounting plate 1 and the measuring mirror 2, restricts the relative movement of the two, and further fixes the relative position of the mounting plate 1 and the measuring mirror 2. Since the use of adhesive is omitted, in the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application, the measuring mirror 2 and the mounting plate 1 fixed together will have less impact on the outside world and have lower requirements on working experience.

[0055] In addition, the vertical connection part 31 is movably connected to the mounting plate 1, and the distance between the vertical limit part 32 and the mounting surface 11 can be adjusted by moving the vertical connection part 31 and the mounting plate 1 relative to each other. Since the vertical reset member 41 exerts a force on the measuring mirror 2, so that the measuring mirror 2 and the vertical limit part 32 maintain an abutting state, when the distance between the vertical limit part 32 and the mounting surface 11 is adjusted by moving the vertical connection part 31 and the mounting plate 1 relative to each other, the distance between the measuring mirror 2 and the mounting surface 11 can be adjusted, and then the posture of the measuring mirror 2 relative to the mounting surface 11 can be adjusted. Therefore, when the reflecting surface 21 and the mounting surface 11 are not perpendicular, the posture of the measuring mirror 2 relative to the mounting plate 1 can be adjusted by adjusting the vertical adjustment connection member 3, so that the reflecting surface 21 and the mounting surface 11 are perpendicular. In addition, the positioning support 5 can be regarded as a fulcrum between the measuring mirror 2 and the mounting surface 11. When the relative posture of the reflecting surface 21 and the mounting surface 11 is adjusted by vertically adjusting the connecting member 3, the positioning support 5 as a fulcrum can make the adjustment between the reflecting surface 21 and the mounting surface 11 more precise and reliable.

[0056] Therefore, in the embodiment of the present application, the orthogonality between the reflecting surface 21 of the measuring mirror 2 and the mounting surface 11 of the mounting plate 1 can be detected in real time, and based on the detection result, the posture of the measuring mirror 2 relative to the mounting plate 1 can be adjusted in real time, so that the reflecting surface 21 and the mounting surface 11 remain in an orthogonal state.

[0057] It is understandable that the specific position of the vertical resetting member 41 between the mounting surface 11 and the measuring mirror 2 is not limited, and it is only necessary to apply a force to the measuring mirror 2 and the mounting plate 1 .

[0058] Further, see Figures 2 to 4 At least a portion of the positioning support 5 is embedded in the mounting surface 11 , and / or at least a portion of the positioning support 5 is embedded in the measuring mirror 2 , for fixing the relative position of the mounting plate 1 and the measuring mirror 2 along a direction parallel to the mounting surface 11 .

[0059] The positioning support 5 is disposed between the measuring mirror 2 and the mounting surface 11, and at least a portion of the positioning support 5 is embedded in the mounting surface 11, and / or at least a portion of the positioning support 5 is embedded in the measuring mirror 2, so as to fix the relative position of the mounting plate 1 and the measuring mirror 2 in a direction parallel to the mounting surface 11. In addition, since the positioning support 5 is partially embedded in the mounting surface 11 and / or the measuring mirror 2, the measuring mirror 2 can be brought closer to the mounting surface 11 at the positioning support 5, thereby reducing the influence of the positioning support on the adjustment range of the measuring mirror 2, and making the connection between the measuring mirror 2 and the mounting plate 1 more compact. Exemplarily, the positioning support 5 can be spherical, so that the contact between the positioning support 5 and the mounting plate 1 and the measuring mirror 2 is smoother, so as to improve the accuracy and reliability of the adjustment between the reflecting surface 21 and the mounting surface 11.

[0060] Figure 5 Another structural schematic diagram of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application. Figure 6 This is another schematic diagram of the structure of the measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application along a direction perpendicular to the mounting surface. Figure 7 for Figure 6 A cross-sectional view of the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application at section BB.

[0061] For further information, see Figures 5 to 7 The mounting plate 1 also includes a positioning support member mounting portion 12, which protrudes from the mounting surface 11; the positioning support member mounting portion 12 is located on the side of the measuring mirror 2 opposite to the reflecting surface 21; at least one positioning support member 5 is arranged between the measuring mirror 2 and the positioning support member mounting portion 12, at least a portion of the positioning support member 5 is embedded in the positioning support member mounting portion 12, and / or at least a portion of the positioning support member 5 is embedded in the measuring mirror 2, for fixing the relative position of the mounting plate 1 and the measuring mirror 2 along a direction perpendicular to the mounting surface 11.

[0062] The positioning support mounting portion 12 protrudes from the mounting surface 11, and one side of the positioning support mounting portion 12 faces the side of the measuring mirror 2 opposite to the reflecting surface 21. The positioning support 5 can also be arranged between the positioning support mounting portion 12 and the measuring mirror 2, and at least a portion of the positioning support 5 is embedded in the positioning support mounting portion 12, and / or at least a portion of the positioning support 5 is embedded in the measuring mirror 2 to fix the relative position of the mounting plate 1 and the measuring mirror 2 along a direction perpendicular to the mounting surface 11.

[0063] When there is at least one positioning support, positioning supports 5 can be provided between the measuring mirror 2 and the mounting surface 11 and between the positioning support mounting portion 12 and the measuring mirror 2 to fix the relative positions of the mounting plate 1 and the measuring mirror 2 .

[0064] Figure 8 for Figure 6 A cross-sectional view of the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application at section BB.

[0065] For further information, see Figure 8 The measuring mirror 2 is provided with a through hole, the vertical connecting portion 31 passes through the through hole and is threadedly connected to the mounting plate 1; the vertical resetting member 41 is sleeved on the vertical connecting portion 31, and a clearance space is provided on the side of the mounting plate 1 facing the measuring mirror 2, and / or a clearance space is provided on the side of the measuring mirror 2 facing the mounting plate 1; at least a part of the vertical resetting member 41 is located in the clearance space.

[0066] The vertical connection part 31 passes through the through hole of the measuring mirror 2 and is threadedly connected to the mounting plate 1. By rotating the vertical adjustment connector 3, the mounting plate 1 and the vertical connection part 31 move relative to each other, thereby adjusting the distance between the vertical limit part 32 and the mounting surface 11, and further adjusting the distance between the measuring mirror 2 and the mounting surface 11.

[0067] The vertical reset member 41 can be in the form of a spring, which is sleeved on the vertical connection portion 31. One end of the vertical reset member 41 abuts against the mounting plate 1, and the other end abuts against the measuring mirror 2, and the vertical reset member 41 is in a compressed state, thereby applying a force to the measuring mirror 2. A clearance space is provided on the side of the mounting plate 1 facing the measuring mirror 2, and / or a clearance space is provided on the side of the measuring mirror 2 facing the mounting plate 1. At least a part of the vertical reset member 41 is located in the clearance space, which can reduce the influence of the vertical reset member 41 on the minimum distance between the measuring mirror 2 and the mounting surface 11, thereby making the structure of the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application more compact, thereby reducing the occupied space.

[0068] Further, see Figure 8 , the vertical reset member 41 includes one of a column spring, a disc spring and a rubber pad. It is understandable that the vertical reset member 41 is in a compressed state, so the vertical reset member 41 can exert a force on the measuring mirror 2, so that the measuring mirror 2 and the vertical limit portion 32 maintain an abutment state. For ease of explanation, in the embodiment of the present application, the vertical reset member 41 is in the form of a disc spring, and along the extension direction of the vertical connection portion 31, the vertical reset member 41 has a smaller thickness, which will occupy a smaller space between the measuring mirror 2 and the mounting plate 1, thereby reducing the impact on the adjustable range of the vertical adjustment connector 3.

[0069] Fig. 9 This is another schematic diagram of the structure of the measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application along a direction perpendicular to the mounting surface.

[0070] For further information, see Fig. 9 , the number of vertical adjustment connectors 3 is at least three; on the mounting surface 11, the centers of the orthographic projections of at least three vertical adjustment connectors 3 are not collinear.

[0071] By adjusting a certain vertical adjustment connector 3, the distance between the measuring mirror 2 and the mounting surface 11 at the vertical adjustment connector 3 can be adjusted. At least three vertical adjustment connectors 3 represent that the distance between the measuring mirror 2 and the mounting surface 11 can be adjusted at least at three locations. The centers of the orthographic projections of at least three vertical adjustment connectors 3 on the mounting surface 11 are not collinear, so at least three positions where the distance between the measuring mirror 2 and the mounting surface 11 can be adjusted are not collinear. Since the three non-collinear points can determine a plane, the posture of the side surface of the measuring mirror 2 facing the mounting surface 11 relative to the mounting surface 11 can be accurately adjusted. When the shape of the measuring mirror 2 is determined, the posture of the reflecting surface 21 relative to the mounting surface 11 can be accurately adjusted so that the reflecting surface 21 is perpendicular to the mounting surface 11.

[0072] Fig.10 Another structural schematic diagram of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application.

[0073] For further information, see Fig.10 The measuring mirror 2 includes a first sub-mirror 2a and a second sub-mirror 2b, and a reflecting surface 21 of the first sub-mirror 2a is perpendicular to a reflecting surface 21 of the second sub-mirror 2b.

[0074] The structures of the first sub-mirror 2a and the second sub-mirror 2b can be the same, and the difference between the two is that the orientation of the reflection surface 21 of the first sub-mirror 2a is different from the orientation of the reflection surface 21 of the second sub-mirror 2b. Considering that the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application is used for orthogonal laser positioning, the reflection surface 21 of the first sub-mirror 2a is perpendicular to the reflection surface 21 of the second sub-mirror 2b. In an ideal state, the reflection surface 21 of the first sub-mirror 2a is perpendicular to the reflection surface 21 of the second sub-mirror 2b. If the reflection surface 21 of the first sub-mirror 2a is not perpendicular to the reflection surface 21 of the second sub-mirror 2b, the reflection surface 21 of the first sub-mirror 2a can be made perpendicular to the reflection surface 21 of the second sub-mirror 2b by adjusting some components of the embodiment of the present application. It should be noted that, before adjusting the postures of the first sub-mirror 2a and the second sub-mirror 2b so that their reflection surfaces 21 are perpendicular, the reflection surface 21 of the first sub-mirror 2a should already be perpendicular to the mounting surface 11, and the reflection surface 21 of the second sub-mirror 2b should already be perpendicular to the mounting surface 11. Therefore, adjusting the postures of the first sub-mirror 2a and the second sub-mirror 2b is equivalent to adjusting the angle between the first sub-mirror 2a and the second sub-mirror 2b in the direction parallel to the mounting surface 11, that is, the lateral angle between the reflection surface 21 of the first sub-mirror 2a and the reflection surface 21 of the second sub-mirror 2b. Fig.11 Another structural schematic diagram of a measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application. Fig.12 This is another schematic diagram of the structure of the measuring mirror mechanism for wafer laser positioning according to an embodiment of the present application along a direction perpendicular to the mounting surface. Fig.13 for Fig.12A cross-sectional view of the measuring mirror mechanism for wafer laser positioning in the embodiment of the present application at the CC section.

[0075] For further information, see Figures 11 to 13 The mounting plate 1 also includes a transverse adjustment member mounting portion 13, which protrudes from the mounting surface 11; the transverse adjustment member mounting portion 13 is located on the side of the measuring mirror 2 opposite to the reflecting surface 21; the measuring mirror mechanism for wafer laser positioning also includes a transverse adjustment connector 6 and a transverse reset member 42; the transverse adjustment connector 6 includes a transverse limit portion 62 and a transverse connection portion 61; along the direction perpendicular to the reflecting surface 21, the transverse connection portion 61 passes through the transverse adjustment member mounting portion 13, and the transverse connection portion 61 is movably connected to the measuring mirror 2 to adjust the distance between the transverse limit portion 62 and the measuring mirror 2; the transverse reset member 42 is arranged between the measuring mirror 2 and the transverse adjustment member mounting portion 13, and the transverse reset member 42 applies a force to the transverse adjustment member mounting portion 13 to make the transverse adjustment member mounting portion 13 away from the measuring mirror 2 and abut against the transverse adjustment member mounting portion 13.

[0076] Considering that the structures of the first sub-mirror 2a and the second sub-mirror 2b are the same, the first sub-mirror 2a is taken as an example for explanation in the embodiment of the present application.

[0077] The transverse adjustment member mounting portion 13 protrudes from the mounting surface 11, and one side surface of the transverse adjustment member mounting portion 13 faces the side of the measuring mirror 2 opposite to the reflecting surface 21. The transverse adjustment connector 6 includes a transverse limiting portion 62 and a transverse connecting portion 61, and the transverse adjustment connector 6 can be obtained by fixed connection or integral molding. The transverse connecting portion 61 penetrates the transverse adjustment member mounting portion 13 and is connected to the measuring mirror 2. The transverse reset member 42 arranged between the measuring mirror 2 and the transverse adjustment member mounting portion 13 will apply force to the measuring mirror 2 and the transverse adjustment member mounting portion 13, so that the measuring mirror 2 has a tendency to move away from the transverse adjustment member mounting portion 13. Since at least a part of the transverse limiting portion 62 is located on the side of the transverse adjustment member mounting portion 13 away from the mounting plate 1, the transverse adjustment member mounting portion 13 is in contact with the transverse limiting portion 62. Therefore, when the relative positions of the transverse connecting portion 61 and the measuring mirror 2 remain unchanged, the measuring mirror 2 and the transverse adjustment member mounting portion 13 can be fixed.

[0078] The transverse connection part 61 is movably connected to the measuring mirror 2, and the distance between the transverse limit part 62 and the measuring mirror 2 is adjusted by moving the transverse connection part 61 and the measuring mirror 2 relative to each other. Since the transverse reset member 42 exerts a force on the measuring mirror 2 and the transverse adjustment member mounting part 13, so that the transverse adjustment member mounting part 13 and the transverse limit part 62 are kept in abutment state, when the distance between the transverse limit part 62 and the measuring mirror 2 is adjusted by moving the transverse connection part 61 and the measuring mirror 2 relative to each other, the distance between the measuring mirror 2 and the transverse adjustment member mounting part 13 can be adjusted, and then the posture of the measuring mirror 2 relative to the transverse adjustment member mounting part 13 can be adjusted. Therefore, under the premise that the reflecting surface 21 and the mounting surface 11 are perpendicular, the posture of the measuring mirror 2 relative to the mounting plate 1 can be adjusted by adjusting the transverse adjustment connection member 6. Taking into account that the first sub-mirror 2a and the second sub-mirror 2b have the same structure, by adjusting the lateral adjustment connecting piece 6 corresponding to the first sub-mirror 2a and / or adjusting the lateral adjustment connecting piece 6 corresponding to the second sub-mirror 2b, the posture of the reflecting surface 21 of the first sub-mirror 2a relative to the mounting surface 11 and / or the posture of the reflecting surface 21 of the second sub-mirror 2b relative to the mounting surface 11 can be adjusted, so that the reflecting surface 21 of the first sub-mirror 2a is perpendicular to the reflecting surface 21 of the second sub-mirror 2b, that is, the lateral angle between the reflecting surface 21 of the first sub-mirror 2a and the reflecting surface 21 of the second sub-mirror 2b is adjusted so that the angle is equal to 90°.

[0079] In the embodiment of the present application, the orthogonality between the reflection surfaces 21 of the two measuring mirrors 2 (the first sub-mirror 2a and the second sub-mirror 2b) can be detected in real time, and based on the detection result, the postures of the reflection surfaces 21 of the two measuring mirrors 2 can be adjusted in real time, so that the reflection surfaces 21 of the two measuring mirrors 2 remain in an orthogonal state, which is suitable for orthogonal laser positioning.

[0080] It should be noted that when at least one positioning support member 5 is arranged between the measuring mirror 2 and the positioning support member mounting portion 12, in the process of adjusting the lateral adjustment connecting member 6 to make the reflecting surface 21 of the first sub-mirror 2a perpendicular to the reflecting surface 21 of the second sub-mirror 2b, the positioning support member 5 can be regarded as a fulcrum, so that the vertical angle adjustment of the reflecting surface 21 of the first sub-mirror 2a and the reflecting surface 21 of the second sub-mirror 2b is more accurate and reliable.

[0081] Further, see Figures 11 to 13 The lateral adjustment member mounting portion 13 is provided with a through hole, and the lateral connecting portion 61 passes through the through hole; the measuring mirror 2 is provided with a hollow portion, and at least a portion of the lateral connecting portion 61 passes through the hollow portion; the measuring mirror mechanism for wafer laser positioning also includes a limit connecting member 7, which is arranged in the hollow portion, and the limit connecting member 7 is threadedly connected to the lateral connecting portion 61; the lateral reset member 42 is sleeved on the lateral connecting portion 61.

[0082] The transverse connection part 61 passes through the through hole of the transverse adjustment member installation part 13, and is threadedly connected with the limit connection part 7 located in the hollow part. By rotating the transverse adjustment connection part 6, the measuring mirror 2 and the transverse connection part 61 are relatively moved, thereby adjusting the distance between the transverse limit part 62 and the measuring mirror 2, and then adjusting the distance between the measuring mirror 2 and the transverse adjustment member installation part 13. Since the measuring mirror 2 is made of glass, it is difficult to make threads on the measuring mirror 2, and the limit connection part 7 is used to realize the indirect connection between the measuring mirror 2 and the transverse connection part 61.

[0083] The transverse reset member 42 can be in the form of a spring, which is sleeved on the transverse connecting portion 61. One end of the transverse reset member 42 abuts against the transverse adjustment member mounting portion 13, and the other end abuts against the measuring mirror 2. The transverse reset member 42 is in a compressed state, thereby applying a force to the measuring mirror 2 and the transverse adjustment member mounting portion 13, so that the transverse limiting portion 62 abuts against the transverse adjustment member mounting portion 13, and the limiting connecting member 7 abuts against the inner wall of the hollow portion.

[0084] Further, see Fig.13 , the transverse reset member 42 includes one of a column spring, a disc spring and a rubber pad. It is understandable that the transverse reset member 42 is in a compressed state, so the transverse reset member 42 can exert a force on the measuring mirror 2 and the transverse adjustment member mounting portion 13, so that the transverse adjustment member mounting portion 13 and the transverse limit portion 62 maintain an abutment state. For ease of explanation, in the embodiment of the present application, the transverse reset member 42 is in the form of a disc spring, and along the extension direction of the transverse connection portion 61, the transverse reset member 42 has a smaller thickness, which will occupy a smaller space between the measuring mirror 2 and the mounting plate 1, thereby reducing the impact on the adjustable range of the transverse adjustment connection member 6.

[0085] Fig.14 A schematic flow chart of a method for calibrating a measuring mirror mechanism according to an embodiment of the present application. Fig.15 A schematic diagram of the arrangement of a laser and a measuring mirror mechanism for wafer laser positioning in a calibration method of a measuring mirror mechanism in an embodiment of the present application.

[0086] See also Fig.14 and Fig.15 The embodiment of the present application also provides a calibration method for a measuring mirror mechanism, using the measuring mirror mechanism for wafer laser positioning of the aforementioned embodiment of the present application. It can be understood that when using the measuring mirror mechanism for wafer laser positioning of the aforementioned embodiment of the present application, whether before laser positioning or during laser positioning, the calibration method for the measuring mirror mechanism of the embodiment of the present application can be used to calibrate the measuring mirror mechanism for wafer laser positioning of the aforementioned embodiment of the present application.

[0087] Specifically, the calibration method of the measuring mirror mechanism of the embodiment of the present application includes:

[0088] Step S1, irradiate the reflective surface 21 of the measuring mirror 2 with laser light, and obtain detection parameters.

[0089] The laser may be a laser used in the laser positioning process. For example, in orthogonal laser positioning, the laser may be an X-direction laser or a Y-direction laser. In an ideal state, the reflective surface 21 of the measuring mirror 2 is perpendicular to the mounting surface 11, and the reflective surface 21 of the measuring mirror 2 is perpendicular to the irradiation direction of the laser. The reflected laser is detected by the detector, and a preset parameter range including the intensity of the reflected laser is obtained. In actual situations, the obtained detection parameters include the intensity of the reflected laser. Considering that the reflective surface 21 of the measuring mirror 2 is not necessarily perpendicular to the mounting surface 11, the reflected laser may be deflected, the laser that can be detected by the detector may be reduced, and the obtained detection parameters may also be less than the minimum value of the preset parameter range.

[0090] Step S2, adjusting the vertical adjustment connector 3.

[0091] The vertical adjustment connector 3 and the mounting plate 1 are moved relative to each other, thereby adjusting the distance between the measuring mirror 2 and the mounting surface 11 , and further adjusting the posture of the measuring mirror 2 relative to the mounting plate 1 , that is, adjusting the posture of the reflecting surface 21 relative to the mounting surface 11 .

[0092] During this process, detection parameters are acquired in real time until the detection parameters are within the preset parameter range. The relative posture of the reflecting surface 21 and the mounting surface 11 in the current state is the same as the relative posture of the reflecting surface 21 and the mounting surface 11 in the ideal state, that is, the reflecting surface 21 is perpendicular to the mounting surface 11 in the current state.

[0093] Further, see Fig.14 and Fig.15 The measuring mirror 2 includes a first sub-mirror 2a and a second sub-mirror 2b.

[0094] Step S1 includes:

[0095] Step S11, irradiate the reflective surface 21 of the first sub-mirror 2a with the first laser R1, and obtain the first detection parameter.

[0096] The first laser R1 is made to irradiate the reflection surface 21 of the first sub-mirror 2a along the first direction X, and the first detection parameter of the reflected first laser R1 is obtained, and the first detection parameter includes the intensity information of the reflected first laser R1 along the direction perpendicular to the mounting surface 11. On the premise that the first direction X is parallel to the mounting surface 11, the first detection parameter can be used to determine whether the reflection surface 21 of the first sub-mirror 2a is perpendicular to the mounting surface 11. When the reflection surface 21 of the first sub-mirror 2a is not perpendicular to the mounting surface 11, the incident light and the reflected light of the first laser R1 will present an acute angle in the direction perpendicular to the mounting surface 11, that is, the vertical angle between the reflection surface 21 and the mounting surface 11 is acute.

[0097] Step S12: Make the second laser R2 irradiate the reflective surface 21 of the second sub-mirror 2b, and obtain the second detection parameter.

[0098] The second laser R2 is made to irradiate the reflection surface 21 of the second sub-mirror 2b along the second direction Y, and a second detection parameter of the reflected second laser R2 is obtained, wherein the second detection parameter includes the intensity information of the reflected second laser R2 along the direction parallel to the mounting surface 11. On the premise that the second direction is parallel to the mounting surface 11, the second detection parameter can be used to determine whether the reflection surface 21 of the second sub-mirror 2b is perpendicular to the mounting surface 11. When the reflection surface 21 of the second sub-mirror 2b is not perpendicular to the mounting surface 11, the incident light and the reflected light of the second laser R2 will present an acute angle in the direction perpendicular to the mounting surface 11, that is, the vertical angle between the reflection surface 21 and the mounting surface 11 is acute.

[0099] In the embodiment of the present application, the first direction X and the second direction Y are perpendicular, and the first laser R1 and the second laser R2 can use laser sources with orthogonal laser positioning.

[0100] Step S2 includes:

[0101] Step S21, adjusting the vertical adjustment connector 3 connected to the first sub-mirror 2a.

[0102] The vertical adjustment connector 3 and the mounting plate 1 are moved relative to each other, thereby adjusting the distance between the first sub-mirror 2a and the mounting surface 11, and further adjusting the posture of the first sub-mirror 2a relative to the mounting plate 1, that is, adjusting the posture of the reflecting surface 21 of the first sub-mirror 2a relative to the mounting surface 11.

[0103] In this process, the first detection parameter is obtained in real time until the first detection parameter is within the preset parameter range, and the relative posture of the reflection surface 21 of the first sub-mirror 2a and the mounting surface 11 in the current state is the same as the relative posture of the reflection surface 21 of the first sub-mirror 2a and the mounting surface 11 in the ideal state. At this time, the angle between the reflection surface 21 of the first sub-mirror 2a and the mounting surface 11 in the current state is 90°, and the two are perpendicular.

[0104] Step S22, adjusting the vertical adjustment connector 3 connected to the second sub-mirror 2b.

[0105] The vertical adjustment connector 3 and the mounting plate 1 are moved relative to each other, thereby adjusting the distance between the second sub-mirror 2b and the mounting surface 11, and further adjusting the posture of the second sub-mirror 2b relative to the mounting plate 1, that is, adjusting the posture of the reflecting surface 21 of the second sub-mirror 2b relative to the mounting surface 11.

[0106] In this process, the second detection parameter is obtained in real time until the second detection parameter is within the preset parameter range, and the relative posture of the reflection surface 21 of the second sub-mirror 2b and the mounting surface 11 in the current state is the same as the relative posture of the reflection surface 21 of the second sub-mirror 2b and the mounting surface 11 in the ideal state. At this time, the angle between the reflection surface 21 of the second sub-mirror 2b and the mounting surface 11 in the current state is 90°, and the two are perpendicular.

[0107] Further, see Fig.14 and Fig.15 The mounting plate 1 also includes a transverse adjustment member mounting portion 13, which protrudes from the mounting surface 11; the transverse adjustment member mounting portion 13 is located on the side of the measuring mirror 2 opposite to the reflecting surface 21; the measuring mirror mechanism for wafer laser positioning also includes a transverse adjustment connector 6 and a transverse reset member 42; the transverse adjustment connector 6 includes a transverse limit portion 62 and a transverse connection portion 61; along the direction perpendicular to the reflecting surface 21, the transverse connection portion 61 passes through the transverse adjustment member mounting portion 13, and the transverse connection portion 61 is movably connected to the measuring mirror 2 to adjust the distance between the transverse limit portion 62 and the measuring mirror 2; the transverse reset member 42 is arranged between the measuring mirror 2 and the transverse adjustment member mounting portion 13, and the transverse reset member 42 applies a force to the transverse adjustment member mounting portion 13 to make the transverse adjustment member mounting portion 13 move away from the measuring mirror 2 and abut against the transverse limit portion 62.

[0108] Step S1 also includes:

[0109] Step S13: Obtain a third detection parameter.

[0110] The first laser R1 is made to irradiate the reflection surface 21 of the first sub-mirror 2a along the first direction X, and a third detection parameter of the reflected first laser R1 is obtained, and the third detection parameter includes the intensity information of the reflected first laser R1 along the direction parallel to the mounting surface 11. Under the premise that the first direction X is parallel to the mounting surface 11, the third detection parameter can be used to determine whether the reflection surface 21 of the first sub-mirror 2a and the incident direction (first direction X) of the first laser R1 are perpendicular. When the reflection surface 21 of the first sub-mirror 2a and the incident direction of the first laser R1 are not perpendicular, the incident light and the reflected light of the first laser R1 will present an acute angle in the direction parallel to the mounting surface 11, that is, the normal of the reflection surface 21 of the first sub-mirror 2a and the lateral angle of the first laser R1 relative to the mounting surface 11 are acute.

[0111] Step S14: Obtain a fourth detection parameter.

[0112] The second laser R2 is made to irradiate the reflection surface 21 of the second sub-mirror 2b along the second direction Y, and a fourth detection parameter of the reflected second laser R2 is obtained, wherein the fourth detection parameter includes the intensity information of the reflected second laser R2 along the direction parallel to the mounting surface 11. Under the premise that the second direction Y is parallel to the mounting surface 11, the fourth detection parameter can be used to determine whether the reflection surface 21 of the second sub-mirror 2b and the incident direction of the second laser R2 (the second direction Y) are perpendicular. When the reflection surface 21 of the second sub-mirror 2b and the incident direction of the second laser R2 are not perpendicular, the incident light and the reflected light of the second laser R2 will present an acute angle in the direction parallel to the mounting surface 11, that is, the normal of the reflection surface 21 of the second sub-mirror 2b and the lateral angle of the second laser R2 relative to the mounting surface 11 are acute.

[0113] Considering that the incident direction of the first laser R1 is perpendicular to the incident direction of the second laser R2, when the reflection surface 21 of the first sub-mirror 2a is perpendicular to the incident direction of the first laser R1, and the reflection surface 21 of the second sub-mirror 2b is perpendicular to the incident direction of the second laser R2, the reflection surface 21 of the first sub-mirror 2a is perpendicular to the reflection surface 21 of the second sub-mirror 2b.

[0114] It is understandable that steps S11, S12, S13, and S14 may be performed simultaneously or at different times.

[0115] The calibration method of the measuring mirror mechanism of the embodiment of the present application further includes:

[0116] Step S3, adjusting the lateral adjustment connector 6.

[0117] Adjust the lateral adjustment connector 6 connected to the first sub-mirror 2a to make the lateral adjustment connector 6 and the first sub-mirror 2a move relative to each other, adjust the posture of the first sub-mirror 2a relative to the mounting surface 11, and adjust the posture of the reflecting surface 21 of the first sub-mirror 2a relative to the mounting surface 11. During this process, the reflecting surface 21 of the first sub-mirror 2a should be kept perpendicular to the mounting surface 11. If after step S3, the reflecting surface 21 of the first sub-mirror 2a is not perpendicular to the mounting surface 11, repeat step S2.

[0118] And / or, adjust the lateral adjustment connector 6 connected to the second sub-mirror 2b so that the lateral adjustment connector 6 and the second sub-mirror 2b move relative to each other, adjust the posture of the second sub-mirror 2b relative to the mounting surface 11, and adjust the posture of the reflecting surface 21 of the second sub-mirror 2b relative to the mounting surface 11. During this process, the reflecting surface 21 of the second sub-mirror 2b should be kept perpendicular to the mounting surface 11. If after step S3, the reflecting surface 21 of the second sub-mirror 2b is not perpendicular to the mounting surface 11, repeat step S2.

[0119] In the above adjustment process, the third detection parameter and the fourth detection parameter are obtained in real time until the third detection parameter and the fourth detection parameter are both within the preset parameter range, which means that the reflection surface 21 of the first sub-mirror 2a is perpendicular to the incident direction of the first laser R1, and the reflection surface 21 of the second sub-mirror 2b is perpendicular to the incident direction of the second laser R2. Since the incident direction of the first laser R1 is perpendicular to the incident direction of the second laser R2, the reflection surface 21 of the first sub-mirror 2a is perpendicular to the reflection surface 21 of the second sub-mirror 2b.

[0120] In summary, the embodiments of the present application provide a measuring mirror mechanism for wafer laser positioning and a method for adjusting the measuring mirror mechanism. The measuring mirror mechanism for wafer laser positioning includes a mounting plate, a measuring mirror, a vertical adjustment connector, a vertical reset member, and at least one positioning support member. The measuring mirror is arranged on the mounting surface of the mounting plate, the vertical connection portion of the vertical adjustment connector passes through the measuring mirror and is connected to the mounting plate, and abuts against the vertical limit portion, and the positioning support member is clamped between the mounting plate and the measuring mirror, and can fix the relative position of the mounting plate and the measuring mirror. When the reflective surface of the measuring mirror is not perpendicular to the mounting surface of the mounting plate, the vertical adjustment connector can be adjusted so that the vertical adjustment connector and the mounting plate move relative to each other. Under the action of the vertical reset member arranged between the measuring mirror and the mounting surface, the measuring mirror and the vertical limit portion remain in abutment, thereby adjusting the distance between the measuring mirror and the mounting surface. In this process, the positioning support can be used as a fulcrum for adjusting the measuring mirror. In combination with the vertical adjustment connector, the distance between the measuring mirror and the mounting surface can be adjusted, thereby more accurately and reliably adjusting the posture of the measuring mirror relative to the mounting surface so that the reflecting surface is perpendicular to the mounting surface. In the embodiment of the present application, the measuring mirror and the mounting plate are non-bonded, which reduces the impact on the detection or processing of semiconductor wafers in a hollow environment, and the reflecting surface of the measuring mirror and the mounting surface of the mounting plate can be adjusted in real time to keep the two in a vertical state.

[0121] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A measuring mirror mechanism for wafer laser positioning, characterized in that: include: A mounting plate having a mounting surface; A measuring mirror, arranged on the mounting surface, wherein the measuring mirror has a reflecting surface for reflecting laser light; A vertical adjustment connecting member, comprising a vertical limiting portion and a vertical connecting portion; along a direction perpendicular to the mounting surface, the vertical connecting portion penetrates the measuring mirror and is movably connected to the mounting plate to adjust the distance between the vertical limiting portion and the mounting surface; A vertical resetting member is disposed between the measuring mirror and the mounting surface, and the vertical resetting member applies a force to the measuring mirror so that the measuring mirror moves away from the mounting surface and abuts against the vertical limiting portion; A positioning support is sandwiched between the mounting plate and the measuring mirror and is used to fix the relative position of the mounting plate and the measuring mirror.

2. The measuring mirror mechanism for wafer laser positioning according to claim 1, characterized in that: At least a portion of the positioning support is embedded in the mounting surface, and / or at least a portion of the positioning support is embedded in the measuring mirror, for fixing the relative positions of the mounting plate and the measuring mirror along a direction parallel to the mounting surface.

3. The measuring mirror mechanism for wafer laser positioning according to claim 1, characterized in that: The mounting plate further comprises a positioning support member mounting portion, the positioning support member mounting portion protruding from the mounting surface; the positioning support member mounting portion is located on a side of the measuring mirror opposite to the reflecting surface; At least one of the positioning supports is disposed between the measuring mirror and the positioning support mounting portion, at least a portion of the positioning support is embedded in the positioning support mounting portion, and / or at least a portion of the positioning support is embedded in the measuring mirror, for fixing the relative position of the mounting plate and the measuring mirror along a direction perpendicular to the mounting surface.

4. The measuring mirror mechanism for wafer laser positioning according to claim 1, characterized in that: The measuring mirror is provided with a through hole, the vertical connection portion passes through the through hole and is threadedly connected to the mounting plate; The vertical reset member is sleeved on the vertical connection portion, a clearance space is provided on the side of the mounting plate facing the measuring mirror, and / or a clearance space is provided on the side of the measuring mirror facing the mounting plate; at least a portion of the vertical reset member is located in the clearance space.

5. The measuring mirror mechanism for wafer laser positioning according to claim 1, characterized in that: The vertical resetting member includes one of a column spring, a disc spring and a rubber pad.

6. The measuring mirror mechanism for wafer laser positioning according to claim 1, characterized in that: The number of the vertical adjustment connecting members is at least three; and the centers of the orthographic projections of at least three of the vertical adjustment connecting members on the installation surface are not collinear.

7. The measuring mirror mechanism for wafer laser positioning according to claim 1, characterized in that: The measuring mirror comprises a first sub-mirror and a second sub-mirror, and the reflecting surface of the first sub-mirror is perpendicular to the reflecting surface of the second sub-mirror.

8. The measuring mirror mechanism for wafer laser positioning according to claim 7, characterized in that: The mounting plate further comprises a transverse adjustment member mounting portion, the transverse adjustment member mounting portion protruding from the mounting surface; the transverse adjustment member mounting portion is located on a side of the measuring mirror opposite to the reflecting surface; The measuring mirror mechanism for wafer laser positioning also includes a lateral adjustment connector and a lateral reset connector; the lateral adjustment connector includes a lateral limiting portion and a lateral connecting portion; along the direction perpendicular to the reflecting surface, the lateral connecting portion passes through the lateral adjustment component mounting portion, and the lateral connecting portion is movably connected to the measuring mirror to adjust the distance between the lateral limiting portion and the measuring mirror; the lateral reset connector is arranged between the measuring mirror and the lateral adjustment component mounting portion, and the lateral reset connector applies a force to the lateral adjustment component mounting portion to make the lateral adjustment component mounting portion move away from the measuring mirror and abut against the lateral limiting portion.

9. The measuring mirror mechanism for wafer laser positioning according to claim 8, characterized in that: The transverse adjustment member mounting portion is provided with a through hole, and the transverse connecting portion passes through the through hole; the measuring mirror is provided with a hollow portion, and at least a portion of the transverse connecting portion passes through the hollow portion; The measuring mirror mechanism for wafer laser positioning also includes a limit connecting piece, which is arranged in the hollow portion and is threadedly connected to the transverse connecting portion; the transverse resetting piece is sleeved on the transverse connecting portion.

10. The measuring mirror mechanism for wafer laser positioning according to claim 8, characterized in that: The lateral return member includes one of a column spring, a disc spring and a rubber pad.

11. A method for calibrating a measuring mirror, characterized in that: Using the measuring mirror mechanism for wafer laser positioning according to any one of claims 1 to 10; the calibration method of the measuring mirror mechanism comprises: Allowing laser light to illuminate the reflective surface of the measuring mirror, and obtaining detection parameters of the reflected laser light, wherein the detection parameters include intensity information of the detected reflected laser light; The vertical adjustment connecting piece is adjusted to make the vertical adjustment connecting piece and the mounting plate move relative to each other until the detection parameter is within a preset parameter range.

12. The method for adjusting the measuring mirror mechanism according to claim 11, characterized in that: The measuring mirror comprises a first sub-mirror and a second sub-mirror; The laser is made to illuminate the reflective surface of the measuring mirror, and detection parameters of the reflected laser are obtained, wherein the detection parameters contain intensity information of the detected reflected laser, including: Allow a first laser to irradiate the reflective surface of the first sub-mirror along a first direction to obtain a first detection parameter of the first laser after reflection, wherein the first detection parameter includes intensity information of the first laser after reflection in a direction perpendicular to the mounting surface; allow a second laser to irradiate the reflective surface of the second sub-mirror along a second direction to obtain a second detection parameter of the second laser after reflection, wherein the second detection parameter includes intensity information of the second laser after reflection in a direction perpendicular to the mounting surface; the first direction is perpendicular to the second direction; Adjusting the vertical adjustment connection piece so that the vertical adjustment connection piece and the mounting plate move relative to each other until the detection parameter is within a preset parameter range includes: Adjust the vertical adjustment connection member connected to the first sub-mirror to make the first sub-mirror and the mounting plate move relative to each other until the first detection parameter is within a preset parameter range; adjust the vertical adjustment connection member connected to the second sub-mirror to make the second sub-mirror and the mounting plate move relative to each other until the second detection parameter is within a preset parameter range.

13. The method for adjusting the measuring mirror mechanism according to claim 12, characterized in that: The mounting plate further comprises a transverse adjustment member mounting portion, the transverse adjustment member mounting portion protrudes from the mounting surface; the transverse adjustment member mounting portion is located on a side of the measuring mirror opposite to the reflecting surface; the measuring mirror mechanism for wafer laser positioning further comprises a transverse adjustment connecting member and a transverse reset member; the transverse adjustment connecting member comprises a transverse limiting portion and a transverse connecting portion; along a direction perpendicular to the reflecting surface, the transverse connecting portion passes through the transverse adjustment member mounting portion, the transverse connecting portion and the measuring mirror are movably connected to adjust the distance between the transverse limiting portion and the measuring mirror; a transverse reset member is arranged between the measuring mirror and the transverse adjustment member mounting portion, the transverse reset member applies a force to the transverse adjustment member mounting portion, so that the transverse adjustment member mounting portion is away from the measuring mirror and abuts against the transverse limiting portion; The laser is made to illuminate the reflective surface of the measuring mirror, and detection parameters of the reflected laser are obtained, wherein the detection parameters include intensity information of the detected reflected laser, and further include: The first laser is made to irradiate the reflecting surface of the first sub-mirror along a first direction to obtain a third detection parameter of the first laser after reflection, wherein the third detection parameter includes the intensity information of the first laser after reflection along a direction parallel to the mounting surface; the second laser is made to irradiate the reflecting surface of the second sub-mirror along a second direction to obtain a fourth detection parameter of the second laser after reflection, wherein the fourth detection parameter includes the intensity information of the second laser after reflection along a direction parallel to the mounting surface; The calibration method of the measuring mirror mechanism further comprises: Adjust the lateral adjustment connection connected to the first sub-mirror to make the lateral adjustment connection and the first sub-mirror move relative to each other, and / or adjust the lateral adjustment connection connected to the second sub-mirror to make the lateral adjustment connection and the second sub-mirror move relative to each other, until the third detection parameter and the fourth detection parameter are both within the preset parameter range.

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