Packaging structure and forming method thereof

Abstract

A package structure and a method of forming the same are provided. The package structure includes a chip-containing structure over a substrate and a heat dissipation cover over the chip-containing structure. The package structure also includes an enclosed chamber embedded in or positioned over the heat sink cover. The packaging structure also includes a cooling tube partially or completely surrounded by the enclosed chamber.

Description

Technical Field

[0001] Embodiments of the present application relate to a packaging structure and a method for forming the same. Background Art

[0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Continuous advances in semiconductor manufacturing processes have produced semiconductor devices with more sophisticated components and / or higher integration. Functional density (i.e., the number of interconnected devices per chip area) has generally increased, while component size (i.e., the smallest component that can be created using a manufacturing process) has decreased. This shrinking process generally provides benefits by increasing production efficiency and reducing associated costs.

[0003] The packaging structure not only provides protection for the semiconductor device from environmental contamination, but also provides a connection interface for the semiconductor device packaged therein. Smaller packaging structures that occupy less space or are lower in height have been developed to package semiconductor devices.

[0004] New packaging technologies have been developed to further improve the density and functionality of semiconductor dies. These relatively new packaging technologies for semiconductor dies face manufacturing challenges. For example, heat dissipation of the packaging structure becomes more important. Summary of the invention

[0005] Some embodiments of the present application provide a packaging structure, including: a chip-containing structure located above a substrate; a heat dissipation cover located above the chip-containing structure; an enclosed chamber embedded in or positioned above the heat dissipation cover; and a first cooling pipe at least partially surrounded by the enclosed chamber.

[0006] Other embodiments of the present application provide a packaging structure, comprising: a chip-containing structure located above a substrate; a heat sink located above the chip-containing structure; an enclosed chamber embedded in the heat sink or positioned above the heat sink, wherein the enclosed chamber is located directly above the chip-containing structure; and a cooling network structure at least partially surrounded by the enclosed chamber.

[0007] Still other embodiments of the present application provide a method for forming a packaging structure, comprising: disposing a chip-containing structure above a substrate; and disposing a heat dissipation cover above the chip-containing structure, wherein: the enclosed chamber is positioned in or above the heat dissipation cover, and the cooling pipe is at least partially surrounded by the enclosed chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] When read in conjunction with the accompanying drawings, various aspects of the disclosed embodiments can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the size of the various components may be arbitrarily increased or reduced.

[0009] Figures 1A to 1C are cross-sectional views of various stages of a process for forming a portion of a package structure in accordance with some embodiments.

[0010] Figure 2 is a perspective view of a portion of a package structure according to some embodiments.

[0011] Figure 3 is a perspective view of a portion of a package structure according to some embodiments.

[0012] Figure 4 is a cross-sectional view of a portion of a package structure according to some embodiments.

[0013] Figure 5 is a cross-sectional view of a portion of a package structure according to some embodiments.

[0014] Figure 6 is a cross-sectional view of a portion of a package structure according to some embodiments.

[0015] Fig. 7A is a cross-sectional view of a portion of a package structure according to some embodiments.

[0016] Figure 7B is a perspective view of a portion of a package structure according to some embodiments.

[0017] Figure 8 is a cross-sectional view of a portion of a package structure according to some embodiments.

[0018] Fig. 9 is a cross-sectional view of a portion of a package structure according to some embodiments.

[0019] Fig.10 is a cross-sectional view of a portion of a package structure according to some embodiments. DETAILED DESCRIPTION

[0020] The following disclosure provides many different embodiments or examples for realizing the different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the disclosed embodiments. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly contacted, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the disclosed embodiments may repeat reference numerals and / or characters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0021] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another (or additional) elements or components as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0022] Those skilled in the art will understand the term "substantially" in the description (such as "substantially flat" or "substantially coplanar"). In some embodiments, the adjective substantially can be removed. Where applicable, the term "substantially" may also include embodiments with "complete", "completely", "all", etc. Where applicable, the term "substantially" may also relate to 90% or more of the specified content, such as 95% or more, particularly 99% or more, including 100%. In addition, terms such as "substantially parallel" or "substantially perpendicular" should be interpreted as not excluding minor deviations from the specified arrangement, and may include, for example, deviations of up to 10 degrees. The word "substantially" does not exclude "completely", for example, a composition that is "substantially free of" Y may be completely free of Y.

[0023] Terms such as "about" in conjunction with specific distances or dimensions should be interpreted as not excluding minor deviations from the specific distances or dimensions and may include deviations of, for example, up to 10%. The term "about" in connection with a numerical value x may mean x±5% or x±10%.

[0024] Some embodiments of the present disclosure are described. Additional operations may be provided before, during, and / or after the stages described in these embodiments. For different embodiments, some of the described stages may be replaced or eliminated. Additional components may be added to the semiconductor device structure and / or the packaging structure. For different embodiments, some of the components described below may be replaced or eliminated. Although some embodiments are discussed with operations implemented in a specific order, these operations may be implemented in another logical order.

[0025] Embodiments of the present disclosure may relate to three-dimensional (3D) packages or 3D-IC devices. Other components and processes may also be included. For example, a test structure may be included to help perform verification testing on a 3D package or 3D-IC device. The test structure may include, for example, a test pad formed in a redistribution layer or on a substrate, which allows testing of the 3D package or 3D-IC, using probes and / or probe cards, etc. Verification testing may be performed on intermediate structures as well as final structures. In addition, the structures and methods disclosed herein may be used in conjunction with a test method for intermediate verification of known good dies to increase yield and reduce costs.

[0026] Figures 1A to 1C is a cross-sectional view of various stages of a process for forming a portion of a package structure according to some embodiments. Figure 1A As shown in FIG. 1 , according to some embodiments, a plurality of chip-containing structures 102A and 102B are disposed above a semiconductor interposer 104 . The chip-containing structures 102A and 102B are laterally spaced apart from each other. In some embodiments, the chip-containing structures 102A and 102B are bonded to the semiconductor interposer 104 via a plurality of conductive bonding structures 106 .

[0027] Each of the conductive bonding structures 106 may include a conductive pillar 108 and a solder bump 110. The conductive pillar 108 may be a copper pillar. The solder bump 110 may be a tin-containing solder bump. The solder bump 110 may include tin and other materials, such as copper, silver, gold, aluminum, lead, another suitable material, or a combination thereof. In some embodiments, the solder bump 110 is a lead-free solder bump.

[0028] In some embodiments, during operation, chip-containing structure 102A generates more heat than chip-containing structure 102B. In some embodiments, chip-containing structure 102A is a logic control chip structure including a plurality of logic control device elements. In some embodiments, chip-containing structure 102A has high power input requirements for high performance computing (HPC).

[0029] The chip-containing structure 102A may include a semiconductor substrate portion, a device portion, and an interconnect structure. The semiconductor substrate portion may include silicon or other elemental semiconductor materials, such as germanium. In some embodiments, the semiconductor substrate portion includes an epitaxially grown semiconductor layer on a dielectric layer. The epitaxially grown semiconductor layer may be made of silicon germanium, silicon, germanium, one or more other suitable materials, or a combination thereof.

[0030] In some other embodiments, the semiconductor substrate portion includes a compound semiconductor. For example, the compound semiconductor includes a X1 Ga X2 In X3 As Y1 P Y2 N Y3 Sb Y4 One or more III-V compound semiconductors of a defined composition, wherein X1, X2, X3, Y1, Y2, Y3 and Y4 represent relative proportions. Each of them is greater than or equal to zero, and they are added together to equal 1. The compound semiconductor may include silicon carbide, gallium arsenide, indium arsenide, indium phosphide, one or more other suitable compound semiconductors, or a combination thereof. Other suitable substrates including II-VI compound semiconductors may also be used.

[0031] A plurality of device elements are formed in and / or on the device portion containing the chip structure 102A. Examples of various device elements include transistors (e.g., metal oxide semiconductor field effect transistors (MOSFETs), complementary metal oxide semiconductor (CMOS) transistors, bipolar junction transistors (BJTs)), or another suitable element. Various processes may be used to form the various device elements, including deposition, etching, implantation, photolithography, annealing, and / or other suitable processes.

[0032] In some embodiments, an interconnect structure containing chip structure 102A is formed on the device portion to provide electrical connection to the device element. The interconnect structure can be a front-side interconnect structure. The interconnect structure includes multiple conductive components surrounded by multiple dielectric layers. The conductive components can include conductive contacts, wires, and conductive vias. The formation of the interconnect structure may involve multiple deposition processes, multiple patterning processes, and multiple planarization processes.

[0033] The device elements in the device portion containing the chip structure 102A can be interconnected through an interconnect structure to form multiple integrated circuit devices, such as analog-to-digital converter (ADC) elements, cache elements, global buffer elements, accumulator elements, local buffer elements, activation elements, pooling elements, input and / or output elements, etc.

[0034] The chip-containing structure 102A can be a single semiconductor die, an integrated chip system (SoIC), and / or a package including one or more semiconductor dies that are sealed or protected. For an integrated chip system, multiple semiconductor dies (or chiplets) are stacked and bonded together to form electrical connections between these semiconductor dies. In some embodiments, the semiconductor die is a system-on-chip (SoC) chip that includes multiple functions. In some embodiments, the back side of the semiconductor die faces up, wherein the front side of the semiconductor die faces the semiconductor interposer 104.

[0035] In some embodiments, the chip-containing structure 102B is a memory-containing chip-containing structure including a plurality of memory device elements. In some embodiments, the chip-containing structure 102B includes a memory device such as a high bandwidth memory (HBM) device. In some embodiments, the memory device element is a non-volatile memory element such as a static random access memory (SRAM) element, a resistive random access memory (RRAM) element, a magnetoresistive random access memory (MRAM) element, etc.

[0036] A plurality of device elements are formed in the device portion containing the chip structure 102B. Examples of various device elements include transistors (e.g., metal oxide semiconductor field effect transistors (MOSFETs), complementary metal oxide semiconductor (CMOS) transistors, bipolar junction transistors (BJTs)), or another suitable element. Various processes may be used to form the various device elements, including deposition, etching, implantation, photolithography, annealing, and / or other suitable processes.

[0037] The chip-containing structure 102B may be a single semiconductor die, a system on an integrated chip (SoIC), and / or a package including one or more semiconductor dies that are sealed or protected. For a system on an integrated chip, multiple semiconductor dies (or chiplets) are stacked and bonded together to form electrical connections between the semiconductor dies. In some embodiments, multiple memory dies are stacked to form a high bandwidth memory (HBM) chip structure.

[0038] The semiconductor interposer 104 may include a semiconductor substrate and a plurality of conductive components. The semiconductor substrate may be made of or include silicon. The conductive components may include through-substrate vias (TSVs) extending into or penetrating the semiconductor substrate. In some embodiments, one or more dielectric layers are formed around the conductive components to prevent short circuits between the conductive components.

[0039] In some embodiments, an interconnect structure is formed over opposing surfaces of the semiconductor substrate of the semiconductor interposer 104. The interconnect structure may include a plurality of dielectric layers and a plurality of conductive features. In some embodiments, the conductive bonding structure 106 is electrically connected to some of the conductive features of the interconnect structure.

[0040] like Figure 1A As shown in , according to some embodiments, an underfill structure 112 is formed over the semiconductor interposer 104 to laterally surround and protect the conductive bonding structure 106. The underfill structure 112 may be made of or include an epoxy-based resin having a filler dispersed therein. The filler may include fibers (such as silica fibers and / or carbon-containing fibers), particles (such as silica particles and / or carbon-containing particles), or a combination thereof.

[0041] In some embodiments, the bottom fill liquid is dispensed onto semiconductor interposer 104 along the side containing chip structure 102A and the side containing chip structure 102B. The bottom fill liquid may be made of or include a polymer material, such as an epoxy-based resin having a filler dispersed therein. The filler may include fibers (such as silica fibers and / or carbon-containing fibers), particles (such as silica particles and / or carbon-containing particles), or a combination thereof.

[0042] The underfill liquid may be absorbed into the space between the chip-containing structures 102A and 102B and the semiconductor interposer 104 to surround the conductive bonding structure 106 by capillary force. Afterwards, a thermal operation may be used to cure the underfill liquid. Thus, an underfill structure 112 is formed.

[0043] like Figure 1B As shown in , according to some embodiments, the semiconductor interposer 104 is then bonded to the substrate 114 via a plurality of conductive connectors 116. In some embodiments, the conductive connectors 116 are tin-containing solder bumps. The material of the conductive connectors 116 can be the same as or similar to the material of the solder bumps 110.

[0044] Substrate 114 may be a circuit substrate (or packaging substrate). In some embodiments, substrate 114 includes a core portion. Substrate 114 may also include multiple insulating layers and multiple conductive components. The conductive components may be used to route electrical signals between opposite sides of substrate 114. The insulating layers may be made of or include one or more polymer materials. The conductive components may be made of or include copper, aluminum, cobalt, tungsten, gold, one or more other suitable materials, or a combination thereof.

[0045] The core portion of substrate 114 may include an organic material, such as a material that can be easily laminated. In some embodiments, the core portion may include a single-sided or double-sided copper-clad laminate, epoxy resin, resin, fiberglass, molding compound, plastic (such as polyvinyl chloride (PVC), acrylonitrile, butadiene and styrene (ABS), polypropylene (PP), polyethylene (PE), polystyrene (PS), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyphenylene sulfide (PPS)), one or more other suitable elements or combinations thereof. Conductive vias may extend through the core portion to provide electrical connections between elements disposed on either side of the core portion.

[0046] In some embodiments, substrate 114 further includes a conductive bonding structure 126. In some embodiments, conductive bonding structure 126 is a solder bump. In some embodiments, conductive bonding structure 126 is used to bond to another component such as a printed circuit board.

[0047] In some embodiments, the conductive bonding structures 126 are lead-free solder bumps. In some embodiments, each of the conductive bonding structures 126 is wider than each of the conductive connectors 116. In some embodiments, the spacing between the conductive bonding structures 126 is wider than the spacing between the conductive connectors 116.

[0048] like Figure 1BAs shown in FIG. 1 , according to some embodiments, an underfill structure 118 is formed over substrate 114 to laterally surround and protect conductive connector 116. The material and formation method of underfill structure 118 may be the same as or similar to those of underfill structure 112.

[0049] like Figure 1C As shown in FIG. 1 , according to some embodiments, a heat dissipation cover (or heat sink) 120 is disposed above the chip-containing structures 102A and 102B. In some embodiments, the heat dissipation cover 120 is attached to the chip-containing structures 102A and 102B through thermal conductive layers 119A and 119B. In some embodiments, the heat dissipation cover 120 is further attached to the substrate 114 through an adhesive layer 122.

[0050] Each of the thermally conductive layers 119A and 119B is used as a thermal interface material. The thermally conductive layers 119A and 119B may be made of or include a polymer material including silicone or epoxy. The thermally conductive layers 119A and 119B may also include particles dispersed in the polymer material. The particles may be made of or include dielectric particles such as aluminum oxide and / or zinc oxide, metal particles such as gold and / or silver, other suitable particles, or a combination thereof.

[0051] In some other embodiments, the thermally conductive layers 119A and 119B are made of or include solid materials or liquid materials. The solid material may include tin (Sn), indium (In), bismuth (Bi), another suitable material, their alloys, or combinations thereof. The liquid material may include gallium (Ga), their alloys, or a resin material containing gallium (Ga) or their alloys.

[0052] Heat dissipation cover 120 may help improve heat dissipation of chip-containing structures 102A and 102B to improve operation and reliability of chip-containing structures 102A and 102B. In some embodiments, heat dissipation cover 120 is made of or includes one or more metal materials.

[0053] The heat dissipation cover 120 can be made of or include copper, nickel, aluminum, gold, silver, steel, another suitable material, or a combination thereof. In some embodiments, the heat dissipation cover 120 has a body made of or including copper. The heat dissipation cover 120 can also have one or more other layers coated on the body. For example, these layers can include an inner layer made of nickel and one or more outer layers made of gold and / or silver.

[0054] like Figure 1CAs shown in FIG. 1 , according to some embodiments, a plurality of closed chambers 124A and 124B are formed in the heat dissipation cover 120. The closed chambers 124A and 124B are embedded in the heat dissipation cover 120. In some embodiments, the closed chambers 124A and 124B are isolated from the external environment. In some embodiments, the closed chambers 124A and 124B are closer to the chip-containing structures 102A and 102B than the topmost surface of the heat dissipation cover 120. In some embodiments, the substrate 114 is wider than each of the closed chambers 124A and 124B, such as Figure 1C In some embodiments, the closed chambers 124A and 124B occupy a smaller space than the heat dissipation cover 120.

[0055] In some embodiments, heat dissipation cover 120 has a wall structure 121 located between enclosed chambers 124A and 124B. In some embodiments, enclosed chambers 124A and 124B are isolated from each other by wall structure 121. In some embodiments, enclosed chamber 124A is located directly above chip-containing structure 102A, and enclosed chamber 124B is located directly above chip-containing structure 102B. In some embodiments, enclosed chamber 124A extends across opposite sidewalls of chip-containing structure 102A, and enclosed chamber 124B extends across opposite sidewalls of chip-containing structure 102B.

[0056] Figure 2 is a perspective view of a portion of a package structure according to some embodiments. In some embodiments, Figure 2 Shows Figure 1C A perspective view of a portion of the heat dissipation cover 120 is shown in FIG. Figure 1C and Figure 2 As shown in FIG. 1 , according to some embodiments, cooling pipe P1 is partially or completely surrounded by closed chamber 124A. In some embodiments, cooling pipe P1 extends across opposite side walls of chip-containing structure 102A. In some embodiments, cooling pipe P2 is partially or completely surrounded by closed chamber 124B, such as Figure 1C and Figure 2 . The diameter of cooling pipe P1 or P2 may be in the range of about 0.05 mm to about 0.2 mm. The height of enclosed chamber 124A or 124B may be in the range of about 0.3 mm to about 0.5 mm. In some embodiments, chip-containing structure 102A or 102B is higher than enclosed chamber 124A or 124B. In some other embodiments, chip-containing structure 102A or 102B is substantially as high as enclosed chamber 124A or 124B.

[0057] Cooling pipes P1 and P2 can be used as cooling network structures.Cooling pipes P1 and P2 can allow cooling materials such as cooling liquid to flow in cooling pipes P1 and P2.Therefore, the surfaces of cooling pipes P1 and P2 can be kept at low temperatures when cooling liquid flows in cooling pipes P1 and P2.Cooling liquid can include water, silicone oil, mineral oil, fluorine-containing liquid, dielectric liquid, liquid nitrogen, another suitable cooling liquid or their combination.The temperature of the cooling liquid introduced into cooling pipes P1 and P2 can have a temperature in the range of from about 0.1 degrees Celsius to about 25 degrees Celsius.

[0058] However, the embodiments of the present disclosure are not limited thereto. Many changes and / or modifications may be made to the embodiments of the present disclosure. In some other embodiments, cooling gas is introduced into the cooling pipes P1 and P2. The cooling gas flowing in the cooling pipes P1 and P2 may also help keep the surfaces of the cooling pipes P1 and P2 at low temperatures. The cooling gas may include nitrogen, argon, another suitable cooling gas, or a combination thereof.

[0059] In some other embodiments, another cooling network structure is used in addition to the cooling tubes. In some embodiments, the cooling network structure comprises a solid mesh structure in direct contact with another cooling source.

[0060] In some embodiments, phase change elements such as liquid materials 125A and 125B are introduced into closed chambers 124A and 124B, respectively. Figure 1C As shown in . In some embodiments, each of the liquid materials 125A and 125B is made of water or includes water. The operating temperature of water can be in the range of from about 298K to about 573K. In some other embodiments, based on different operating temperatures, the liquid materials 125A and / or 125B are made of ammonia solution, perfluorinated compounds (PFC), methanol, ethanol, liquid helium, another suitable material or a combination thereof or include ammonia solution, perfluorinated compounds (PFC), methanol, ethanol, liquid helium, another suitable material or a combination thereof. The operating temperature of the ammonia solution can be in the range of from about 213K to about 373K. The operating temperature of the perfluorinated compound can be in the range of from about 233K to about 398K. The operating temperature of methanol can be in the range of from about 283K to about 403K. The operating temperature of ethanol can be in the range of from about 273K to about 403K. For ultra-low temperature applications, liquid helium can be used as liquid material 125A and / or 125B. The operating temperature of liquid helium can be in the range of from about 2K to about 4K. In some embodiments, liquid materials 125A and 125B are positioned on the bottom surfaces of closed chambers 124A and 124B, respectively. In some embodiments, liquid materials 125A and 125B are spaced apart from cooling pipes P1 and P2. The vertical distance between the top of liquid material 125A and the bottom of cooling pipe P1 can be in a range from about 0.05 mm to about 0.1 mm.

[0061] In some embodiments, during operation of chip-containing structures 102A and 102B, heat generated from chip-containing structures 102A and 102B is directed to liquid materials 125A and 125B through thermally conductive layers 119A and 119B and heat dissipation cover 120. Thus, heat from chip-containing structures 102A and 102B causes evaporation of liquid materials 125A and 125B.

[0062] In some embodiments, each of the liquid materials 125A and 125B is made of water. The water cycle of the liquid materials 125A and 125B may involve evaporation and condensation processes. Evaporation converts water into water vapor. Condensation cools the water vapor down and converts it back into water droplets.

[0063] In some embodiments, water vapor generated by evaporation of liquid materials 125A and 125B can reach the surface of cooling pipes P1 and P2 with low temperature. Therefore, water vapor carrying heat from chip-containing structures 102A and 102B can be cooled and condensed into water at the top surface of heat dissipation cover 120 and the surface of cooling pipes P1 and P2. Then, condensed water with a lower temperature can flow along the side walls of closed chambers 124A and 124B to the bottom of closed chambers 124A and 124B. Due to the cooler condensed water, liquid materials 125A and 125B can be kept at a low temperature and continue to improve the heat dissipation of chip-containing structures 102A and 102B.

[0064] Fig.10 is a cross-sectional view of a portion of a package structure according to some embodiments. In some embodiments, Fig.10 Shows Figure 1C A cross-sectional view of region R in FIG. Fig.10 As shown in FIG. 1 , according to some embodiments, a wick structure 1002 is formed in a closed chamber. In some embodiments, the wick structure 1002 is formed on the bottom surface of the closed chamber 124A. The wick structure 1002 between the chip structure 102A and the cooling pipe P1 can transport liquid by capillary action. Due to the capillary action, the liquid material 125A can be spread on the surface of the wick structure 1002, which improves the evaporation of the liquid material 125A. Therefore, the heat dissipation efficiency of the heat dissipation is significantly improved.

[0065] like Figure 1C As shown in , the closed chamber 124A has side walls S1 and S2, and the closed chamber 124B has side walls S3 and S4. In some embodiments, the side walls S1 and S3 are inclined side walls. In some embodiments, the inclined profiles of the side walls S1 and S3 can help to accelerate the condensed water to flow back to the liquid materials 125A and 125B along the side walls S1 and S3. Therefore, the high heat removal capacity of the heat dissipation cover 120 can be ensured.

[0066] like Figure 1C As shown in , the side wall S1 of the closed chamber 124A and the lower surface of the heat dissipation cover 120 extending in a direction away from the closed chamber 124A form an angle θ1. In some embodiments, the angle θ1 is an acute angle. The angle θ1 can be in the range from about 30 degrees to about 70 degrees. In some embodiments, the angle θ1 is about 60 degrees.

[0067] In some examples, if the angle θ1 is too large (such as greater than about 70 degrees) or too small (such as less than about 30 degrees), the collection of condensed water may become relatively difficult. The condensed water may flow back to the liquid material 125A at a lower speed. The heat dissipation efficiency of the heat dissipation cover 120 may be adversely affected.

[0068] like Figure 1C As shown in , the side wall S2 of the wall structure 121 and the lower surface of the heat dissipation cover 120 extending in a direction away from the closed chamber 124A form an angle θ2. The angle θ2 may be in the range of from about 45 degrees to about 90 degrees. In some examples, if the angle θ2 is too small (such as less than about 45 degrees), the closed chamber 124A may occupy too large an area. The structural strength of the wall structure 121 may also be adversely affected.

[0069] In some embodiments, the cooling pipe P1 surrounded by the closed chamber 124A and the cooling pipe P2 surrounded by the closed chamber 124B have different designs, such as Figure 1C and Figure 2 In some embodiments, cooling pipe P1 is designed to have better cooling capability than cooling pipe P2 because cooling pipe P1 is disposed above chip-containing structure 102A that generates more heat than chip-containing structure 102B. In some embodiments, cooling pipe P1 occupies a larger space than cooling pipe P2, such as Figure 1C and Figure 2 as shown in .

[0070] In some embodiments, the cooling liquid flowing in cooling pipe P1 has a lower temperature than the cooling liquid flowing in cooling pipe P2. In some embodiments, the material of the cooling liquid flowing in cooling pipe P1 is different from the material of the cooling liquid flowing in cooling pipe P2. In some embodiments, the material of the cooling liquid flowing in cooling pipe P1 is the same as the material of the cooling liquid flowing in cooling pipe P2.

[0071] In some embodiments, the flow rate of the cooling liquid flowing in cooling pipe P1 is different from the flow rate of the cooling liquid flowing in cooling pipe P2. In some embodiments, the flow rate of the cooling liquid flowing in cooling pipe P1 is higher than the flow rate of the cooling liquid flowing in cooling pipe P2. In some embodiments, the diameter of cooling pipe P1 is larger than the diameter of cooling pipe P2. In some embodiments, cooling pipe P1 has more curved sections than cooling pipe P2, such as Figure 2 as shown in .

[0072] In some embodiments, the cooling pipe P1 has an inlet FC1 that allows cooling liquid or cooling gas to flow into the portion of the cooling pipe P1 surrounded by the closed chamber 124A, such as Figure 2 . The cooling pipe P1 also has an outlet FW1 that allows the possibly warmed cooling liquid or cooling gas to flow out of the portion of the cooling pipe P1 surrounded by the closed chamber 124A. Similarly, according to some embodiments, the cooling pipe P2 also has an inlet FC2 and an outlet FW2, as shown in FIG. Figure 2 as shown in .

[0073] In some embodiments, the inlet FC1 of the cooling pipe P1 is positioned between the outlet FW1 and the closed chamber 124B, such as Figure 2 As shown in FIG. 1 , the inlet FC2 of the cooling pipe P2 is positioned between the inlet FC1 of the cooling pipe P1 and the outlet FW2 of the cooling pipe P2. In some embodiments, the inlets FC1 and FC2 into which the introduced cooling liquid or cooling gas flows are positioned adjacent to each other, such as Figure 2 as shown in .

[0074] However, the embodiments of the present disclosure are not limited thereto. Many changes and / or modifications may be made to the embodiments of the present disclosure. Figure 3 is a perspective view of a portion of a package structure according to some embodiments. In some embodiments, Figure 3 Shows Figure 1C 1 is a perspective view of a portion of the heat dissipation cover 120 shown in FIG. In some embodiments, the outlet FW1 of the cooling pipe P1 is positioned between the inlet FC1 and the closed chamber 124B, such as Figure 3 The outlet FW2 of the cooling pipe P2 is positioned between the outlet FW1 of the cooling pipe P1 and the inlet FC2 of the cooling pipe P2.

[0075] In some embodiments, multiple enclosed chambers are positioned directly above different chip-containing structures. However, the embodiments of the present disclosure are not limited thereto. Many variations and / or modifications may be made to the embodiments of the present disclosure. In some other embodiments, a single enclosed chamber is formed that extends across multiple chip-containing structures.

[0076] Figure 41 is a cross-sectional view of a portion of a package structure according to some embodiments. In some embodiments, a closed chamber 124 extending across chip-containing structures 102A and 102B is embedded in heat dissipation cover 120. There is no wall structure formed between cooling pipes P1 and P2. Cooling pipes P1 and P2 are positioned in the same closed chamber 124.

[0077] In some embodiments, the closed chamber 124 extends across the opposite sidewalls of the chip-containing structure 102A and the opposite sidewalls of the chip-containing structure 102B. In some embodiments, cooling pipes P1 and P2 with different designs are respectively disposed directly above the chip-containing structures 102A and 102B. The temperature of the cooling pipes P1 and P2 can be precisely adjusted as needed to improve the overall heat dissipation efficiency of the heat dissipation cover 120. Therefore, the performance and reliability of the chip-containing structures 102A and 102B are greatly improved.

[0078] Many variations and / or modifications may be made to the embodiments of the present disclosure. Figure 5 1 is a cross-sectional view of a portion of a package structure according to some embodiments. In some embodiments, cooling pipes P1 and P2 having the same design are respectively disposed directly above chip-containing structures 102A and 102B. In some embodiments, the temperatures of cooling pipes P1 and P2 remain the same. In some other embodiments, the temperatures of cooling pipes P1 and P2 can be precisely adjusted as needed to improve the overall heat dissipation efficiency of heat dissipation cover 120. Therefore, the performance and reliability of chip-containing structures 102A and 102B are greatly improved.

[0079] In some embodiments, there is only a single cooling tube that is partially or completely surrounded by a closed chamber. However, the embodiments of the present disclosure are not limited thereto. Many variations and / or modifications may be made to the embodiments of the present disclosure. In some other embodiments, two or more cooling tubes are partially or completely surrounded by a closed chamber.

[0080] Figure 6 1 is a cross-sectional view of a portion of a package structure according to some embodiments. In some embodiments, in addition to cooling pipe P1, cooling pipe P3 is provided. Cooling pipe P3 is partially or completely surrounded by closed chamber 124A. In some embodiments, during operation, cooling pipes P1 and P3 have different temperatures. In some embodiments, the cooling capacity of cooling pipe P1 is better than cooling pipe P3. In some embodiments, during operation, cooling pipe P1 has a lower temperature than cooling pipe P3, which can promote water circulation of liquid material 125A.

[0081] In some embodiments, cooling pipes P1 and P3 have different designs. In some embodiments, cooling pipe P1 occupies a larger interval than cooling pipe P3. In some embodiments, the cooling liquid flowing in cooling pipe P1 has a lower temperature than the cooling liquid flowing in cooling pipe P3. In some embodiments, the material of the cooling liquid flowing in cooling pipe P1 and the material of the cooling liquid flowing in cooling pipe P3 are different. In some embodiments, the material of the cooling liquid flowing in cooling pipe P1 and the material of the cooling liquid flowing in cooling pipe P3 are the same. In some embodiments, the flow rate of the cooling liquid flowing in cooling pipe P1 is higher than the flow rate of the cooling liquid flowing in cooling pipe P3. In some embodiments, the diameter of cooling pipe P1 is larger than the diameter of cooling pipe P3. In some embodiments, cooling pipe P1 has more curved sections than cooling pipe P3.

[0082] The temperature and / or flow rate of the cooling liquid or cooling air flowing in the cooling tube can be precisely adjusted to ensure effective water circulation of the liquid material in the closed chamber. Therefore, the heat dissipation efficiency of the heat dissipation cover can be improved. Many changes and / or modifications can be made to the embodiments of the present disclosure. In some embodiments, one or more temperature sensors are used to detect the temperature at different parts of the packaging structure. Based on the information collected by the temperature sensor, the temperature and / or flow rate of the cooling liquid or cooling air flowing in the cooling tube can be precisely adjusted.

[0083] Fig. 7A is a cross-sectional view of a portion of a package structure according to some embodiments. Figure 7B is a perspective view of a portion of a package structure according to some embodiments. In some embodiments, one or more temperature sensors are formed at one or more portions of the package structure to collect temperature information. Fig. 7A and Figure 7B As shown in , a plurality of temperature sensors TS1 to TS12 are provided. In some embodiments, only one of the temperature sensors TS1 to TS12 is provided. In some other embodiments, two or more of the temperature sensors TS1 to TS12 are provided.

[0084] In some embodiments, temperature sensors TS1 to TS5 and TS10 to TS12 are disposed in cooling pipes P1 and P2 or adjacent to cooling pipes P1 and P2. In some embodiments, temperature sensors TS4 and TS11 are disposed in inlets FC1 and FC2 or adjacent to inlets FC1 and FC2, respectively. In some embodiments, temperature sensor TS5 is disposed in a curved section of cooling pipe P1 or adjacent to the curved section of cooling pipe P1. In some embodiments, temperature sensors TS6 and TS9 are disposed in chip-containing structures 102A and 102B or adjacent to chip-containing structures 102A and 102B, respectively. In some embodiments, temperature sensors TS7 and TS8 are disposed in heat dissipation cover 120 or adjacent to heat dissipation cover 120.

[0085] Many variations and / or modifications may be made to the embodiments of the present disclosure. Figure 8 8 is a cross-sectional view of a portion of a package structure according to some embodiments. A thermally conductive structure 802 is disposed above the heat dissipation cover 120. In some embodiments, the thermally conductive structure 802 extends across the edges of the enclosed chambers 124A and 124B. The thermally conductive structure 802 can be used as a heat sink that helps improve the heat dissipation efficiency of the heat dissipation cover 120. Due to the thermally conductive structure 802, the water circulation of the liquid materials 125A and 125B can be further improved. Therefore, the operation and reliability of the package structure can be improved.

[0086] The thermally conductive structure 802 may be made of or include copper, gold, steel, silver, one or more other suitable materials, or a combination thereof. The thermally conductive structure 802 may be attached to the heat dissipation cover 120 using an adhesive layer 804. The adhesive layer 804 may include an adhesive tape, a glue material, etc. In some embodiments, the adhesive layer 804 is made of a material that is the same as or similar to the material of the thermally conductive layers 119A and 119B.

[0087] In some embodiments, the closed chamber is embedded in the heat dissipation cover 120. However, the embodiments of the present disclosure are not limited thereto. Many changes and / or modifications may be made to the embodiments of the present disclosure. In some other embodiments, the closed chamber is positioned above the heat dissipation cover 120.

[0088] Fig. 9 is a cross-sectional view of a portion of a package structure according to some embodiments. In some embodiments, a second heat dissipation cover 920 is disposed above the heat dissipation cover 120. The material of the second heat dissipation cover 920 may be the same as or similar to the material of the heat dissipation cover 120. In some embodiments, the second heat dissipation cover 920 surrounds a closed chamber 924 above the heat dissipation cover 120.

[0089] In some embodiments, a cooling tube P1' and a liquid material 125' are provided, such as Fig. 9 As shown in FIG. 1 , similar to cooling tube P1 , cooling tube P1 ′ is partially or completely surrounded by a closed chamber 924 . Liquid material 125 ′ may be made of or include water. Similar to Figure 1C In the embodiment shown in FIG. 1 , the cooling pipe P1 ′ can help the water circulation of the liquid material 125 ′ to reduce the temperature of the heat dissipation cover 120 below. Therefore, the heat dissipation efficiency of the heat dissipation cover 120 is improved, and the performance and reliability of the packaging structure are ensured.

[0090] The embodiments of the present disclosure form a packaging structure with a heat dissipation cover. A closed chamber is formed in or above the heat dissipation cover. A cooling network structure such as a cooling pipe is provided to be partially or completely surrounded by the closed chamber. The temperature and / or flow rate of the cooling liquid or cooling air flowing in the cooling pipe can be accurately adjusted to adjust the temperature of the cooling pipe and to ensure effective water circulation of the liquid material in the closed chamber. Therefore, the heat dissipation efficiency of the heat dissipation cover can be improved. Therefore, the performance and reliability of the packaging structure are greatly improved.

[0091] According to some embodiments, a packaging structure is provided. The packaging structure includes a chip-containing structure located above a substrate and a heat dissipation cover located above the chip-containing structure. The packaging structure also includes a closed chamber embedded in the heat dissipation cover or positioned above the heat dissipation cover. The packaging structure also includes a cooling pipe partially or completely surrounded by the closed chamber.

[0092] According to some embodiments, a packaging structure is provided. The packaging structure includes a chip-containing structure located above a substrate and a heat sink located above the chip-containing structure. The packaging structure also includes a closed chamber embedded in the heat sink or positioned above the heat sink. The closed chamber is located directly above the chip-containing structure. The packaging structure also includes a cooling network structure partially or completely surrounded by the closed chamber.

[0093] According to some embodiments, a method for forming a package structure is provided. The method includes disposing a chip-containing structure above a substrate. The method also includes disposing a heat dissipation cover above the chip-containing structure. An enclosed chamber is positioned in or above the heat dissipation cover. A cooling tube is partially or completely surrounded by the enclosed chamber.

[0094] Some embodiments of the present application provide a packaging structure, including: a chip-containing structure located above a substrate; a heat dissipation cover located above the chip-containing structure; an enclosed chamber embedded in or positioned above the heat dissipation cover; and a first cooling pipe at least partially surrounded by the enclosed chamber.

[0095] In some embodiments, the package structure further comprises a liquid material in the enclosed chamber. In some embodiments, the first cooling pipe extends across opposite sidewalls of the chip-containing structure. In some embodiments, the inclined sidewalls of the enclosed chamber and the lower surface of the heat dissipation cover extending in a direction away from the enclosed chamber form an acute angle, and the acute angle is in a range from about 30 degrees to about 70 degrees. In some embodiments, the package structure further comprises a second chip-containing structure located above the substrate, wherein the second chip-containing structure is laterally spaced apart from the chip-containing structure, and during operation of the chip-containing structure and the second chip-containing structure, the chip-containing structure generates more heat than the second chip-containing structure. In some embodiments, the package structure further comprises: a second enclosed chamber embedded in or positioned above the heat dissipation cover; and a second cooling pipe at least partially surrounded by the second enclosed chamber. In some embodiments, the package structure further comprises a wall structure located between the enclosed chamber and the second enclosed chamber, wherein the sidewalls of the wall structure and the lower surface of the heat dissipation cover extending in a direction away from the enclosed chamber form an angle, and the angle is in a range from about 45 degrees to about 90 degrees. In some embodiments, the first cooling pipe has a first inlet and a first outlet, the second cooling pipe has a second inlet and a second outlet, the first inlet is located between the first outlet and the second enclosed chamber, and the second inlet is located between the first inlet and the second outlet. In some embodiments, the enclosed chamber extends across the opposite side walls of the second chip-containing structure, and the package structure further includes a second cooling pipe at least partially surrounded by the enclosed chamber, wherein a portion of the second cooling pipe is located directly above the second chip-containing structure. In some embodiments, the package structure further includes a second cooling pipe at least partially surrounded by the enclosed chamber, wherein the first cooling pipe is located between the second cooling pipe and the chip-containing structure. In some embodiments, the package structure further includes a temperature sensor positioned in or adjacent to the first cooling pipe, the chip-containing structure, or the heat dissipation cover.

[0096] Other embodiments of the present application provide a packaging structure, comprising: a chip-containing structure located above a substrate; a heat sink located above the chip-containing structure; an enclosed chamber embedded in the heat sink or positioned above the heat sink, wherein the enclosed chamber is located directly above the chip-containing structure; and a cooling network structure at least partially surrounded by the enclosed chamber.

[0097] In some embodiments, the packaging structure further comprises at least one liquid material located on the bottom surface of the enclosed chamber. In some embodiments, the cooling network structure is a cooling tube that allows cooling liquid or cooling gas to flow in the cooling tube. In some embodiments, the cooling network structure extends across at least one side wall of the chip-containing structure. In some embodiments, the packaging structure further comprises a wick structure positioned in the enclosed chamber, wherein the wick structure is located between the chip-containing structure and the cooling network structure, and the wick structure is capable of transporting liquid by capillary action.

[0098] Still other embodiments of the present application provide a method for forming a packaging structure, comprising: disposing a chip-containing structure above a substrate; and disposing a heat dissipation cover above the chip-containing structure, wherein: the enclosed chamber is positioned in or above the heat dissipation cover, and the cooling pipe is at least partially surrounded by the enclosed chamber.

[0099] In some embodiments, the method for forming a package structure further comprises disposing at least one liquid material in the closed chamber, wherein the at least one liquid material is located outside the cooling tube. In some embodiments, the method for forming a package structure further comprises: disposing the chip-containing structure above a semiconductor interposer; and disposing the semiconductor interposer carrying the chip-containing structure above the substrate. In some embodiments, the method for forming a package structure further comprises attaching the heat dissipation cover to the substrate.

[0100] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the embodiments of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis to design or modify other processes and structures for performing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent constructions do not deviate from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the embodiments of the present disclosure.

Claims

1. A packaging structure, comprising: A chip structure is located above the substrate; a heat dissipation cover, located above the chip-containing structure; a closed chamber embedded in the heat dissipation cover or positioned above the heat dissipation cover; as well as The first cooling tube is at least partially surrounded by the closed chamber. 2 . The package structure of claim 1 , further comprising a liquid material in the closed chamber.

3. The packaging structure according to claim 1, wherein: The first cooling tubes extend across opposite side walls of the chip-containing structure.

4. The packaging structure according to claim 1, wherein: The inclined side wall of the closed chamber and a lower surface of the heat dissipation cover extending in a direction away from the closed chamber form an acute angle, and the acute angle ranges from about 30 degrees to about 70 degrees.

5. The package structure according to claim 1, further comprising a second chip-containing structure located above the substrate, wherein: The second chip-containing structure is laterally spaced apart from the chip-containing structure, and during operation of the chip-containing structure and the second chip-containing structure, the chip-containing structure generates greater heat than the second chip-containing structure.

6. The packaging structure according to claim 5, further comprising: a second closed chamber, embedded in the heat dissipation cover or positioned above the heat dissipation cover; as well as The second cooling tube is at least partially surrounded by the second closed chamber.

7. The packaging structure according to claim 6, further comprising a wall structure located between the closed chamber and the second closed chamber, wherein: The side wall of the wall structure and a lower surface of the heat dissipation cover extending in a direction away from the closed chamber form an angle, and the angle is in a range from about 45 degrees to about 90 degrees.

8. The package structure according to claim 6, wherein: The first cooling tube has a first inlet and a first outlet, The second cooling tube has a second inlet and a second outlet, The first inlet is located between the first outlet and the second closed chamber, and The second inlet is located between the first inlet and the second outlet.

9. A packaging structure, comprising: A chip structure is located above the substrate; a heat sink, located above the chip-containing structure; an enclosed chamber embedded in or positioned above the heat sink, wherein the enclosed chamber is located directly above the chip-containing structure; as well as A cooling network structure is at least partially surrounded by the closed chamber.

10. A method for forming a package structure, comprising: Disposing a chip-containing structure above the substrate; as well as A heat dissipation cover is provided above the chip-containing structure, wherein: The enclosed chamber is positioned in or above the heat dissipation cover, and The cooling tube is at least partially surrounded by the closed chamber.

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