A method for preparing a monolithic heterogeneous integrated optical device and an optical device

Abstract

The present invention specifically relates to a method for preparing a monolithic heterogeneously integrated optical device and an optical device. The main idea of ​​the present invention is to use a semiconductor platform to synchronously design a laser, an amplifier (SOA), a modulator and an antenna assembly, so that they can be set on the same wafer through a single heterogeneous integration, thereby achieving the purpose of reducing the size of the device and reducing the complexity of the process. At the same time, the present invention selectively uses III-V group materials as heterogeneous integration materials, making it possible to synchronously prepare lasers, amplifiers (SOA), modulators and antenna assemblies on the same wafer, and utilizing the optical amplification effect of the amplifier, so that the laser emitted by the laser is amplified in multiple ways, and then, under the phase shifting action of the modulator, it is uniformly emitted through the antenna assembly, thereby enhancing the transmission power of the optical phased array, thereby improving the application value of the laser radar based on the optical phased array.

Description

Technical Field

[0001] The present invention relates to the technical field of optical device preparation technology, and in particular to a preparation method of a monolithic heterogeneous integrated optical device and the optical device. Background Art

[0002] Optical phased arrays and their derivatives have broad application prospects in the field of communications technology. The concept of optical phased arrays (OPA) is derived from traditional microwave phased arrays, but they offer significant advantages over microwave phased arrays. Because they use lasers operating in the optical wavelength band as information carriers, OPAs are immune to interference from traditional radio waves. Furthermore, the narrow laser beam makes them difficult to detect and provides excellent confidentiality.

[0003] Prior art phased arrays consist of multiple components, including an optical generator, modulator, antenna array, and transceiver. The varying composition of these components often requires multiple bonding or assembly steps, resulting in large size and limited compatibility, which in turn limits their application scenarios. Summary of the Invention

[0004] In response to the technical problems in the prior art of complex optical phased array preparation process and large device size, the present invention provides a method for preparing a monolithic heterogeneous integrated optical device, which has at least the advantages of simple preparation process, reasonable device layout, and reliable function.

[0005] First aspect

[0006] The present invention provides a method for preparing a monolithic heterogeneous integrated optical device, comprising:

[0007] S10, etching regions corresponding to the components and connecting waveguides for connecting the components on the first wafer according to the distribution positions and connection relationships of the components on the optical device;

[0008] S20. Based on the differences among the components, doping the etched region in a targeted manner to obtain a first functional layer;

[0009] S30, using the dielectric layer as a bonding basis, heterogeneously integrating the second wafer disposed on the dielectric layer onto the first wafer;

[0010] S40, etching the second wafer in a targeted manner according to the differences in the components to obtain a second functional layer;

[0011] S50, etching the dielectric layer in a targeted manner according to the differences among the components, and then doping the etched dielectric layer in a targeted manner to obtain a third functional layer;

[0012] S60, depositing a first metal layer on the first functional layer and the second functional layer respectively;

[0013] S70, depositing a second metal layer on the third functional layer;

[0014] S80, depositing a third metal layer on the first metal layer and the second metal layer respectively to form the corresponding components.

[0015] Specifically, one of the main technical concepts of the present invention is to utilize the combination of processing and manufacturing technology and device structural characteristics to enable the optical device to be processed with all components of the optical device through only one bonding based on the first wafer, so that the optical device can complete the processing of all components on the chip with only one bonding, thereby simplifying the processing flow of the optical device and reducing the size of the optical device.

[0016] Furthermore, before step S80, the following steps are included:

[0017] S71, etching the first wafer to form a heat sink area;

[0018] S72, depositing a heat dissipation layer to cover the heat sink area, the first metal layer, the second metal layer, the second functional layer, and the third functional layer;

[0019] S73 , opening holes in the heat dissipation layer to at least partially expose the first metal layer and the second metal layer.

[0020] Furthermore, the components include lasers, amplifiers, modulators and antenna components.

[0021] Specifically, the optical device provided by the present invention is an optical phased array, and has all the component structures of a laser, amplifier, modulator and antenna assembly. The functions of the optical phased array can be realized through a single chip, giving it a broader application prospect.

[0022] Furthermore, the preparation method of the laser or the amplifier includes:

[0023] In step S10, the etched region includes a ridge waveguide;

[0024] Step S20 is not executed;

[0025] In step S40, the second functional layer includes a P-type evanescent light field coupling structure;

[0026] In step S50, the third functional layer includes an N-type evanescent light field coupling structure;

[0027] In step S60, the first metal layer includes a P-type electrode metal layer;

[0028] In step S70, the second metal layer includes an N-type electrode metal layer;

[0029] In step S80, the third metal layer includes a metal connection layer.

[0030] Specifically, the laser and amplifier provided by the present invention are both prepared and obtained through the above process.

[0031] Optionally, the preparation method of the modulator includes:

[0032] In step S20, the first functional layer includes a P-type lightly doped silicon ridge waveguide disposed on one side of the etched region, a first H+ doped region disposed on the other side of the etched region, and a P-type heavily doped silicon ridge waveguide connected to the P-type lightly doped silicon ridge waveguide;

[0033] In step S40, only the second wafer is etched without obtaining the second functional layer;

[0034] In step S50, the third functional layer includes an N-type evanescent light field coupling structure and a second H+ doped region doped based on the N-type evanescent light field coupling structure and aligned with the first H+ doped region;

[0035] In step S60, the first metal layer includes a P-type electrode metal layer;

[0036] In step S70, the second metal layer includes an N-type electrode metal layer;

[0037] In step S80, the third metal layer includes a metal connection layer.

[0038] Optionally, the method for preparing the antenna assembly includes:

[0039] In step S10, the etched area includes the antenna grating;

[0040] The steps after S10 are not executed.

[0041] It is worth explaining that although the processing technology of the modulator is different from that of the laser, amplifier and antenna assembly, based on the technical solution provided by the present invention, the components of these optical devices can be processed in the same time and space, which simplifies the complexity of the overall optical device processing and improves its processing efficiency.

[0042] Second aspect

[0043] The present invention provides a monolithic heterogeneous integrated optical device, which is obtained by the method for preparing a monolithic heterogeneous integrated optical device provided in any possible embodiment of the first aspect.

[0044] Furthermore, the present invention provides a monolithic heterogeneous integrated optical device comprising:

[0045] A substrate, prepared based on the first wafer, with a laser, amplifier, modulator, and antenna assembly disposed on the substrate, wherein each assembly is connected via the connecting waveguide according to its distribution position and connection relationship;

[0046] The laser and the amplifier both include: a ridge waveguide provided in the etched region, an N-type evanescent light field coupling structure covering the ridge waveguide, a P-type evanescent light field coupling structure provided on the N-type evanescent light field coupling structure, an N-type electrode metal layer provided on the N-type evanescent light field coupling structure, a P-type electrode metal layer provided on the P-type evanescent light field coupling structure, and a metal connection layer connecting the N-type electrode metal layer and the P-type electrode metal layer;

[0047] The modulator includes: a P-type lightly doped silicon ridge waveguide, a P-type heavily doped silicon ridge waveguide and a first H+ doped region are provided in the etched region; an N-type evanescent light field coupling structure partially covering the P-type lightly doped silicon ridge waveguide; the N-type evanescent light field coupling structure includes a second H+ doped region and the second H+ doped region is aligned with and covers the first H+ doped region; a P-type electrode metal layer is provided in the P-type heavily doped silicon ridge waveguide; an N-type electrode metal layer is provided in the N-type evanescent light field coupling structure; and a metal connection layer connected to the N-type electrode metal layer and the P-type electrode metal layer;

[0048] The antenna assembly includes: the etched area is provided with an antenna grating.

[0049] Furthermore, the laser comprises a single or two or more broadband tunable lasers connected in series;

[0050] The laser and the amplifier may be connected in a one-to-one or one-to-many manner;

[0051] The amplifier, modulator and antenna assembly are connected in sequence and correspond one to one.

[0052] Specifically, the optical device provided by the present invention includes both a single laser, amplifier, modulator, and antenna assembly, and a combination of multiple amplifiers, modulators, and antenna assemblies corresponding to a single laser. This allows the laser light generated by the laser to be split and then synchronously amplified by the amplifiers in each branch, thereby enhancing the optical power emitted from the antenna array and, in turn, improving the power intensity of the optical device provided by the present invention. Furthermore, the laser includes a single or two or more broadband tunable lasers connected in series, thereby increasing the lateral adjustable angle of the antenna array scanning through the series connection of the lasers.

[0053] Optionally, the substrate includes a base, a thermal oxide layer disposed on the base, and a silicon layer disposed on the thermal oxide layer;

[0054] The P-type evanescent light field coupling structure of the laser, amplifier and modulator is based on III-V group materials.

[0055] Furthermore, the ridge waveguide, connecting waveguide and antenna grating are provided in the silicon layer;

[0056] The laser, amplifier and modulator each include a heat sink region, and a heat dissipation layer disposed between the heat sink region and the first metal layer and the second metal layer;

[0057] The heat sink area of ​​the laser and amplifier is arranged on the thermal oxide layer;

[0058] The heat sink area of ​​the modulator is arranged on the silicon layer.

[0059] Optionally, in the laser, the ridge waveguide has the function of confining the light field to a direction toward the N-type evanescent light field coupling structure;

[0060] In the amplifier, the ridge waveguide has a function of confining the light field in a direction toward the substrate.

[0061] Furthermore, the width of the ridge waveguide of the laser is greater than the width of the ridge waveguide of the amplifier, that is, the adjustment of the width of the ridge waveguide can be used to distribute the light field of component structures such as the laser and amplifier.

[0062] Specifically, another major technical concept of the present invention is to utilize the regulation of the ridge waveguide to realize the functions of the laser and the amplifier respectively, so that the processing technology of the amplifier is homologous to the processing technology of the laser, and the optimal light field distribution of the corresponding device is achieved.

[0063] In summary, the present invention provides a method for preparing a monolithic heterogeneously integrated optical device and an optical device, which have at least the following advantages:

[0064] 1. By combining the manufacturing process with the device structure characteristics, all components of the optical device can be processed on the first wafer through a single bonding process, simplifying the processing flow of the optical device and reducing the size of the optical device.

[0065] 2. The optical device provided by the present invention includes both a single laser, amplifier, modulator, and antenna assembly, and a combination of multiple amplifiers, modulators, and antenna assemblies corresponding to one laser. This allows the laser light generated by the laser to be split and then synchronously amplified by the amplifiers in each branch, thereby enhancing the optical power emitted from the antenna array and, in turn, improving the power intensity of the optical device provided by the present invention.

[0066] 3. Another major technical concept of the present invention is to utilize the regulation of the ridge waveguide to realize the functions of the laser and the amplifier respectively, so that the processing technology of the amplifier is homologous to that of the laser, and the optimal light field distribution of the corresponding device is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] The present invention will be described in further detail below with reference to the accompanying drawings and preferred embodiments. However, those skilled in the art will appreciate that these drawings are drawn only for the purpose of explaining the preferred embodiments and should not be construed as limiting the scope of the present invention. Furthermore, unless otherwise specified, the drawings are merely schematic representations of the composition or structure of the depicted objects and may contain exaggerated representations. Furthermore, the drawings are not necessarily drawn to scale.

[0068] Figure 1 A schematic flow chart of a method for manufacturing a monolithic heterogeneously integrated optical device provided by one embodiment of the present invention;

[0069] Figure 2 A schematic diagram of the planar structure of a monolithic heterogeneously integrated optical device provided by one embodiment of the present invention;

[0070] Figure 3 A process diagram for preparing various components in an optical device provided by one embodiment of the present invention;

[0071] Figure 4 Another process diagram for preparing components of an optical device according to an embodiment of the present invention;

[0072] Figure 5 A schematic cross-sectional view of a laser (a) and an amplifier (b) according to an embodiment of the present invention;

[0073] Figure 6 A schematic cross-sectional view of a modulator according to an embodiment of the present invention;

[0074] Figure 7 A schematic cross-sectional view of an antenna assembly according to an embodiment of the present invention;

[0075] Figure 8 Schematic diagram of the light field distribution of a laser (a), amplifier (b), and modulator (c) provided in one embodiment of the present invention;

[0076] 1. Optical device; 11. Laser; 12. Amplifier; 13. Modulator; 14. Antenna assembly; 15. Connecting waveguide; 101. Etched area; 102. First functional layer; 103. Second functional layer; 104. Third functional layer; 105. First metal layer; 106. Second metal layer; 107. Third metal layer; 108. Heat sink area; 109. Substrate; 110. Thermal oxide layer; 111. Silicon layer; 101a. Laser ridge waveguide; 101b. Amplifier Large ridge waveguide; 101c, antenna grating; 102a, P-type lightly doped silicon ridge waveguide; 102b, first H+ doped region; 102c, P-type heavily doped silicon ridge waveguide; 103a, P-type evanescent light field coupling structure; 103b, structural layer; 104a, N-type evanescent light field coupling structure; 104b, second H+ doped region; 105a, P-type electrode metal layer; 106a, N-type electrode metal layer; 107a, metal connection layer; 108a, heat dissipation layer. DETAILED DESCRIPTION

[0077] The following is combined with Figures 1 to 8 , the present invention is described in detail.

[0078] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0079] The main concept of the present invention is to use a semiconductor platform to synchronously design the laser, amplifier (SOA), modulator, and antenna assembly, so that they can be set on the same wafer through a single heterogeneous integration, achieving the goal of reducing device size and reducing process complexity. At the same time, the present invention selectively uses III-V group materials as heterogeneous integration materials, making it possible to simultaneously prepare the laser, amplifier (SOA), modulator, and antenna assembly on the same wafer. Utilizing the optical amplification effect of the amplifier, the laser light emitted by the laser is amplified in multiple channels and then, under the phase shifting effect of the modulator, is uniformly emitted through the antenna assembly, thereby enhancing the transmission power of the optical phased array and further improving the application value of the laser radar based on the optical phased array.

[0080] For further information, see Figure 1 FIG2 is a flow chart of a method for preparing a monolithic heterogeneously integrated optical device provided by an embodiment of the present invention.

[0081] Example 1

[0082] Based on the unified construction of each device, first, according to the distribution position and connection relationship of the components on the optical device, etching areas corresponding to the components and connecting waveguides for connecting the components are etched on the first wafer respectively, and the etching areas can be used to form ridge waveguides, ridge waveguide doping and antenna gratings, etc., and the connecting waveguides are used for optical connection between the components; then, according to the differences of the components, the etching areas are targetedly doped to obtain the first functional layer; then, according to step S30, the second wafer arranged on the dielectric layer is heterogeneously integrated into the dielectric layer with the dielectric layer as the bonding basis. a first wafer; then, through step S40, according to the differences of the components, the second wafer is etched in a targeted manner to obtain a second functional layer; further, through step S50, according to the differences of the components, the dielectric layer is etched in a targeted manner, and then doped in a targeted manner to obtain a third functional layer; then, through step S60, a first metal layer is deposited on the first functional layer and the second functional layer respectively; then, through step S70, a second metal layer is deposited on the third functional layer; finally, through step S80, a third metal layer is deposited on the first metal layer and the second metal layer to form the corresponding components.

[0083] It is worth explaining that the differences in the components refer to the structural differences of the laser, amplifier, modulator and antenna components, and the operations that need to be performed are performed in a targeted manner or the operations that do not need to be performed are not performed in a targeted manner. Therefore, in the case of a single heterogeneous bonding, the required parts of the first wafer and the second wafer are utilized to form the laser, amplifier, modulator and antenna components respectively, thereby completing the monolithic unified processing of all functional components in the optical device, thereby achieving the purpose of reducing the manufacturing complexity of the optical device and reducing the volume of the optical device.

[0084] Further, please refer to Table 1 which shows a summary of the differences in the preparation methods of various components in the optical device provided in one embodiment of the present invention.

[0085] Table 1 Summary of differences in the preparation methods of various components in optical devices

[0086]

[0087]

[0088] Example 2

[0089] The laser is prepared as follows:

[0090] In S10, for the processing area of ​​the laser, while processing the etching area, a laser ridge waveguide is synchronously acquired;

[0091] In S20, no operation is performed on the processing area of ​​the laser;

[0092] In S30, the heterogeneous integration operation is performed normally;

[0093] In S40, etching the second wafer with respect to the processing area of ​​the laser to obtain a P-type evanescent light field coupling structure of the laser;

[0094] In step S50, the dielectric layer is etched in the processing area of ​​the laser to obtain the N-type evanescent light field coupling structure of the laser;

[0095] In step S60, a first metal layer is deposited on the P-type evanescent light field coupling structure in the processing area of ​​the laser (the laser does not perform step S20 and the first functional layer does not exist), that is, a P-type electrode metal layer is deposited on the P-type evanescent light field coupling structure;

[0096] In step S70, a second metal layer is deposited on the N-type evanescent light field coupling structure in the processing area of ​​the laser, that is, an N-type electrode metal layer is deposited on the N-type evanescent light field coupling structure;

[0097] In step S80, a third metal layer is deposited on the P-type electrode metal layer and the N-type electrode metal layer respectively in the processing area of ​​the laser, so as to apply a voltage difference to the P-type evanescent light field coupling structure and the N-type evanescent light field coupling structure, thereby realizing the light emission function of the laser.

[0098] Example 3

[0099] The amplifier is prepared as follows:

[0100] The preparation method of the amplifier is exactly the same as that of the laser. Only in step S10, for the processing area of ​​the amplifier, the amplified ridge waveguide is synchronously obtained when processing the etching area. That is, except for the amplified ridge waveguide, the rest of the amplifier is exactly the same as the laser ridge waveguide of the laser, thereby improving the consistency of the device and reducing the optical loss between the two.

[0101] Example 4

[0102] The preparation method of the modulator is as follows:

[0103] In step S10, for the processing area of ​​the modulator, the corresponding etching area is obtained;

[0104] In step S20, with respect to the processing area of ​​the modulator, the etched area is doped to obtain a P-type lightly doped silicon ridge waveguide, a first H+ doped area, and a P-type heavily doped silicon ridge waveguide, that is, the P-type lightly doped silicon ridge waveguide, the first H+ doped area, and the P-type heavily doped silicon ridge waveguide together form a first functional layer of the modulator, that is, a P-type junction of the modulator;

[0105] In step S30, the heterogeneous integration operation is performed normally;

[0106] In step S40, the second wafer is completely etched for the processing area of ​​the modulator, leaving only the dielectric layer;

[0107] In step S50, the dielectric layer is etched in the processing area of ​​the modulator to obtain an N-type evanescent light field coupling structure, and the area of ​​the N-type evanescent light field coupling structure aligned with the first H+ doped region is doped to obtain a second H+ doped region. That is, the N-type evanescent light field coupling structure and its second H+ doped region together form a third functional layer;

[0108] In step S60, for the processing area of ​​the modulator, a first metal layer is deposited on the first functional layer (the modulator does not obtain a second functional layer), that is, a P-type electrode metal layer is deposited on the first functional layer, specifically, the P-type electrode metal layer is deposited on the P-type heavily doped silicon ridge waveguide;

[0109] In step S70, for the processing area of ​​the modulator, a second metal layer is deposited on the third functional layer, that is, an N-type electrode metal layer is deposited on the third functional layer, specifically, the N-type electrode metal layer is bridge-deposited between the N-type evanescent light field coupling structure and the second H+ doped region;

[0110] In step S80, with respect to the processing area of ​​the modulator, a third metal layer is deposited on the P-type electrode metal layer and the N-type electrode metal layer, respectively, so as to apply a voltage difference to the P-type heavily doped silicon ridge waveguide, the N-type evanescent light field coupling structure, and the second H+ doped region, thereby realizing the optical modulation function of the modulator.

[0111] Example 5

[0112] The preparation method of the antenna assembly is as follows:

[0113] In step S10, for the processing area of ​​the antenna component, the corresponding etching area is obtained, and the etching area specifically includes the antenna grating;

[0114] The antenna assembly does not perform steps S20 to S80.

[0115] Optionally, in Example 1, Examples 2 to 5 belong to a parallel processing process, in which different operations are performed on different devices in corresponding steps, so that only one processing flow is required to simultaneously complete the processing of all components on the optical device.

[0116] Further, in order to explain and illustrate the distribution position and connection relationship of the components on the optical device, please refer to Figure 2 FIG2 is a schematic diagram of a planar structure of a monolithic heterogeneously integrated optical device provided by an embodiment of the present invention.

[0117] Example 6

[0118] The optical device 1 includes a laser 11, an amplifier 12, a modulator 13, an antenna assembly 14, and a connecting waveguide 15 for connecting the various devices.

[0119] Optionally, the laser 11 is connected to multiple amplifiers 12 through a beam-splitting connecting waveguide 15. Any amplifier 12 amplifies the light and adjusts the angle through the corresponding modulator 13 connected to the amplifier 12, and finally transmits it through the corresponding antenna assembly 14. Since the modulator 13 can be adjusted in two dimensions, all the emitted light can be converged at one point, thereby improving the light emission power of the entire optical device.

[0120] Optionally, when performing step S10, the connecting waveguides between the components are etched.

[0121] Optionally, in step S30, the second wafer disposed on the dielectric layer is heterogeneously integrated with the first wafer using the dielectric layer as a bonding basis, and in step S40, the second wafer is etched separately according to differences in the structures of the components.

[0122] Furthermore, the second wafer may only cover the areas of the laser 11 , the amplifier 12 and the modulator 13 .

[0123] For further information, see Figure 3 Shown is a process diagram for preparing various components in an optical device provided by an embodiment of the present invention.

[0124] Specifically, Figure 3 For explanation of Example 2 ( Figure 2 shows the plane of the optical device, and Figure 3 The cross sections of the laser, amplifier, and modulator are shown separately for comparison and understanding).

[0125] Furthermore, for different regions:

[0126] In step S10, the laser region acquires the etched region and the laser ridge waveguide in the etched region; the amplifier region acquires the etched region and the amplified ridge waveguide in the etched region; the modulator region acquires the etched region; and the antenna component region acquires the etched region and the antenna grating. Simultaneously, in step S10, the connecting waveguides of each component are also synchronously etched.

[0127] In step S20, no operation is performed in the laser region or the amplifier region; the modulator region dopes the etched region to obtain a P-type lightly doped silicon ridge waveguide provided on one side of the etched region, a first H+ doped region provided on the other side of the etched region, and a P-type heavily doped silicon ridge waveguide connected to the P-type lightly doped silicon ridge waveguide; since the antenna assembly has been prepared in step S10, the operation is exited from step S20;

[0128] In step S30, the second wafer disposed on the dielectric layer is heterogeneously integrated with the first wafer using the dielectric layer as a bonding basis;

[0129] In step S40, the laser region and the amplifier region are both etched from the second wafer to obtain a P-type evanescent light field coupling structure (since the laser region and the amplifier region differ only in step S10, the other steps are identical and are subsequently referred to as the laser region / amplifier region); the modulator region is also etched from the second wafer.

[0130] In step S50, the dielectric layer in the laser region / amplifier region is etched to obtain an N-type evanescent light field coupling structure; the dielectric layer in the modulator region is etched to obtain an N-type evanescent light field coupling structure, and the region of the N-type evanescent light field coupling structure aligned with the first H+ doped region is doped to obtain a second H+ doped region;

[0131] In step S60, a P-type electrode metal layer is deposited on a P-type evanescent light field coupling structure in the laser region / amplifier region; and a P-type electrode metal layer is deposited on a P-type heavily doped silicon ridge waveguide in the modulator region.

[0132] In step S70, in the laser region / amplifier region, an N-type electrode metal layer is deposited on the N-type evanescent light field coupling structure; in the modulator region, an N-type electrode metal layer is bridge-deposited between the N-type evanescent light field coupling structure and the second H+ doped region;

[0133] In step S80, in the laser area / amplifier area, a third metal layer is deposited on the first metal layer and the second metal layer respectively to form metal wires of the P junction and the N junction of the PN junction for applying voltage; in the modulator area, a third metal layer is deposited on the first metal layer and the second metal layer respectively to form metal wires of the P junction and the N junction of the PN junction for applying voltage.

[0134] The preparation of the entire optical device can be completed through the above steps.

[0135] It is worth explaining that the deposition of the first metal electrode and the second metal electrode is not subject to the above process. They can be deposited after the P junction or N junction is prepared. In order to ensure the consistency of the processing technology, the present invention adopts the above preparation process.

[0136] Optionally, after step S40 , a P-type electrode metal layer may be deposited on the P-type evanescent light field coupling structure.

[0137] For further information, see Figure 4 Shown is another process diagram for preparing various components in an optical device provided by an embodiment of the present invention.

[0138] Example 7

[0139] Based on Example 1, the present invention is further provided with a heat dissipation layer for dissipating heat from the laser, amplifier and modulator, including: S71, etching the first wafer to form a heat sink area; S72, depositing a heat dissipation layer to cover the heat sink area, the first metal layer, the second metal layer, the second functional layer and the third functional layer; S73, opening a hole in the heat dissipation layer to at least partially expose the first metal layer and the second metal layer.

[0140] Reference Figure 5 Understanding means:

[0141] In step S71, the first wafer is further etched in the laser region / amplifier region to obtain a heat sink region; the first wafer is further etched in the modulator region to obtain a heat sink region;

[0142] In step S72, in the laser region / amplifier region, a heat dissipation layer is deposited and coated on the heat sink region, the second functional layer, the third functional layer, the first metal layer, and the second metal layer; in the modulator region, a heat dissipation layer is deposited and coated on the heat sink region, the first functional layer, the third functional layer, the first metal layer, and the second metal layer;

[0143] In step S73, a hole is opened in the heat dissipation layer in the laser region / amplifier region to at least partially expose the first metal layer and the second metal layer; and a hole is opened in the heat dissipation layer in the modulator region to at least partially expose the first metal layer and the second metal layer.

[0144] Then, step S80 is performed to deposit a third metal layer on the heat dissipation layer, and the third metal layer is deposited on the first metal layer and the second metal layer respectively to form the corresponding components.

[0145] For further information, see Figure 5 Shown is a schematic cross-sectional structural diagram of a laser (a) and an amplifier (b) provided in one embodiment of the present invention.

[0146] Since the laser 11 and the amplifier 12 differ only in the etching area, they are described as a whole:

[0147] The laser 11 / amplifier 12 includes a substrate 109, a thermal oxide layer 110 disposed on the substrate 109, a silicon layer 111 disposed on the thermal oxide layer 110, and a laser ridge waveguide 101a disposed in the etched region 101 of the silicon layer 111 (laser, see Figure 5 (a)) / Amplified ridge waveguide 101b (amplifier, see Figure 5 (b)), covered with laser ridge waveguide 101a (laser, see Figure 5 (a)) / Amplified ridge waveguide 101b (amplifier, see Figure 5 (b)) of the N-type evanescent light field coupling structure 104a, a P-type evanescent light field coupling structure 103a provided on the N-type evanescent light field coupling structure 104a through a structural layer 103b, a P-type electrode metal layer 105a provided on the P-type evanescent light field coupling structure 103a, an N-type electrode metal layer 106a provided on both sides of the N-type evanescent light field coupling structure 104a, a heat sink layer 108a provided in a heat sink area 108 of a thermal oxide layer 110, and a heat sink layer 108a. 08a covers the P-type evanescent light field coupling structure 103a, the N-type evanescent light field coupling structure 104a, the P-type electrode metal layer 105a and the N-type electrode metal layer 106a, and reserves connection holes for the P-type electrode metal layer 105a and the N-type electrode metal layer 106a, and a metal connection layer 107a covering the heat dissipation layer 108a. 107a is divided into two sections, which are respectively connected to the P-type electrode metal layer 105a and the N-type electrode metal layer 106a through the connection holes.

[0148] The substrate 109 , the thermal oxide layer 110 , and the silicon layer 111 are provided by the first wafer, the structural layer 103 b and the P-type evanescent light field coupling structure 103 a are provided by the second wafer, and the N-type evanescent light field coupling structure 104 a is provided by the dielectric layer.

[0149] For further information, see Figure 6 A schematic cross-sectional structural diagram of a modulator provided in one embodiment of the present invention.

[0150] The modulator 13 includes: a substrate 109, a thermal oxide layer 110 disposed on the substrate 109, a silicon layer 111 disposed on the thermal oxide layer 110, and a P-type lightly doped silicon ridge waveguide 102a, a first H+ doped region 102b, and a P-type heavily doped silicon ridge waveguide 102c disposed in the etched region 101 of the silicon layer 111, wherein the P-type lightly doped silicon ridge waveguide 102a is disposed on one side of the etched region 101, and the first H+ doped region 102b is disposed on the other side. On the other side of the etched region 101, an etched gap is provided between the P-type lightly doped silicon ridge waveguide 102a and the first H+ doped region 102b, the P-type heavily doped silicon ridge waveguide 102c is connected to the P-type lightly doped silicon ridge waveguide 102a and is away from the first H+ doped region 102b, the N-type evanescent light field coupling structure 104a bridged between the P-type lightly doped silicon ridge waveguide 102a and the first H+ doped region 102b, and the N-type evanescent light field coupling structure 104a includes an aligned The second H+ doped region 104b of the first H+ doped region 102b, the P-type electrode metal layer 105a disposed on the P-type heavily doped silicon ridge waveguide 102c, the N-type electrode metal layer 106a bridging the N-type evanescent light field coupling structure 104a and the second H+ doped region 104b, the heat dissipation layer 108a disposed in the heat sink region 108 of the thermal oxide layer 110, the heat dissipation layer 108a for the P-type heavily doped silicon ridge waveguide 102c, the P-type lightly doped silicon ridge waveguide 102a, the N-type evanescent light field coupling structure 104a, the second H+ doped region 104b, the P-type electrode metal layer 105a, and the N-type electrode metal layer 106a are all covered and connection holes for the P-type electrode metal layer 105a and the N-type electrode metal layer 106a are reserved. A metal connection layer 107a covering the heat dissipation layer 108a is divided into two sections and connected to the P-type electrode metal layer 105a and the N-type electrode metal layer 106a through the connection holes;

[0151] The substrate 109 , the thermal oxide layer 110 , and the silicon layer 111 are provided by the first wafer, and the N-type evanescent light field coupling structure 104 a is provided by the dielectric layer.

[0152] For further information, see Figure 7 Shown is a schematic cross-sectional structural diagram of an antenna assembly provided in one embodiment of the present invention.

[0153] The antenna assembly includes: a substrate 109, a thermal oxide layer 110 disposed on the substrate 109, a silicon layer 111 disposed on the thermal oxide layer 110, and an etched region 101 disposed on the silicon layer 111, wherein the etched region 101 includes an antenna grating 101c;

[0154] The substrate 109 , the thermal oxide layer 110 , and the silicon layer 111 are provided by a first wafer.

[0155] For further information, see Figure 8 Schematic diagram of light field distribution of a laser (a), an amplifier (b) and a modulator (c) provided in one embodiment of the present invention.

[0156] based on Figure 8 The amplifier ridge waveguide of the amplifier is larger than the laser ridge waveguide of the laser, so that the laser ridge waveguide of the laser limits the light field distribution to the second functional layer (see Figure 8 (a)), so that the amplifier ridge waveguide of the amplifier limits the light field distribution to the first wafer (see Figure 8 (b)), the light field of the modulator is distributed in the second functional layer and the first wafer (see Figure 8 (c)). Therefore, although fabricated by heterogeneous integration of the first wafer and the second wafer, the laser, amplifier, and modulator implement different light processing functions based on different light field distributions.

[0157] The present invention has been described in detail above. Specific examples have been used in the present invention to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only intended to help understand the present invention and its core concepts. It should be noted that those skilled in the art may make various improvements and modifications to the present invention without departing from the principles of the present invention, and such improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A method for preparing a monolithic heterogeneous integrated optical device, characterized in that: include: S10, etching regions corresponding to the components and connecting waveguides for connecting the components on the first wafer according to the distribution positions and connection relationships of the components on the optical device; S20. Based on the differences among the components, doping the etched region in a targeted manner to obtain a first functional layer; S30, using the dielectric layer as a bonding basis, heterogeneously integrating the second wafer disposed on the dielectric layer onto the first wafer; S40, etching the second wafer in a targeted manner according to the differences in the components to obtain a second functional layer; S50, etching the dielectric layer in a targeted manner according to the differences among the components, and then doping the etched dielectric layer in a targeted manner to obtain a third functional layer; S60, depositing a first metal layer on the first functional layer and the second functional layer respectively; S70, depositing a second metal layer on the third functional layer; S80, depositing a third metal layer on the first metal layer and the second metal layer respectively.

2. The method for preparing a monolithic heterogeneous integrated optical device according to claim 1, wherein: Before step S80, the following steps are included: S71, etching the first wafer to form a heat sink area; S72, depositing a heat dissipation layer to cover the heat sink area, the first metal layer, the second metal layer, the second functional layer, and the third functional layer; S73 , opening holes in the heat dissipation layer to at least partially expose the first metal layer and the second metal layer.

3. The method for preparing a monolithic heterogeneous integrated optical device according to claim 2, wherein: The components described include lasers, amplifiers, modulators, and antenna assemblies.

4. The method for preparing a monolithic heterogeneous integrated optical device according to claim 3, wherein: The preparation method of the laser or the amplifier comprises: In step S10, the etched region includes a ridge waveguide; Step S20 is not executed; In step S40, the second functional layer includes a P-type evanescent light field coupling structure; In step S50, the third functional layer includes an N-type evanescent light field coupling structure; In step S60, the first metal layer includes a P-type electrode metal layer; In step S70, the second metal layer includes an N-type electrode metal layer; In step S80, the third metal layer includes a metal connection layer.

5. The method for preparing a monolithic heterogeneous integrated optical device according to claim 3, wherein: The preparation method of the modulator comprises: In step S20, the first functional layer includes a P-type lightly doped silicon ridge waveguide disposed on one side of the etched region, a first H+ doped region disposed on the other side of the etched region, and a P-type heavily doped silicon ridge waveguide connected to the P-type lightly doped silicon ridge waveguide; In step S40, only the second wafer is etched without obtaining the second functional layer; In step S50, the third functional layer includes an N-type evanescent light field coupling structure and a second H+ doped region doped based on the N-type evanescent light field coupling structure and aligned with the first H+ doped region; In step S60, the first metal layer includes a P-type electrode metal layer; In step S70, the second metal layer includes an N-type electrode metal layer; In step S80, the third metal layer includes a metal connection layer.

6. The method for preparing a monolithic heterogeneous integrated optical device according to claim 3, wherein: The preparation method of the antenna assembly includes: In step S10, the etching area includes the antenna grating; The steps after S10 are not executed.

7. A monolithic heterogeneous integrated optical device, characterized in that: Obtained by the method for preparing a monolithic heterogeneous integrated optical device according to any one of claims 1 to 6, comprising: A substrate, prepared based on the first wafer, wherein the substrate includes the etched area; The laser, amplifier, modulator and antenna components are arranged on the substrate, and the components are connected through the connecting waveguide according to the distribution position and connection relationship; The laser and the amplifier both include: a ridge waveguide provided in the etched region, an N-type evanescent light field coupling structure covering the ridge waveguide, a P-type evanescent light field coupling structure provided on the N-type evanescent light field coupling structure, an N-type electrode metal layer provided on the N-type evanescent light field coupling structure, a P-type electrode metal layer provided on the P-type evanescent light field coupling structure, and a metal connection layer connecting the N-type electrode metal layer and the P-type electrode metal layer; The modulator includes: a P-type lightly doped silicon ridge waveguide, a P-type heavily doped silicon ridge waveguide and a first H+ doped region are provided in the etched region; an N-type evanescent light field coupling structure partially covering the P-type lightly doped silicon ridge waveguide; the N-type evanescent light field coupling structure includes a second H+ doped region and the second H+ doped region is aligned with and covers the first H+ doped region; a P-type electrode metal layer is provided in the P-type heavily doped silicon ridge waveguide; an N-type electrode metal layer is provided in the N-type evanescent light field coupling structure; and a metal connection layer connected to the N-type electrode metal layer and the P-type electrode metal layer; The antenna assembly includes: the etched area is provided with an antenna grating.

8. The monolithic heterogeneous integrated optical device according to claim 7, characterized in that: include: The laser includes a single or two or more broadband tunable lasers connected in series; The laser and the amplifier may be connected in a one-to-one or one-to-many manner; The amplifier, modulator and antenna assembly are connected in sequence and correspond one to one.

9. The monolithic heterogeneous integrated optical device according to claim 7, characterized in that: include: The substrate includes a base, a thermal oxide layer disposed on the base, and a silicon layer disposed on the thermal oxide layer; The P-type evanescent light field coupling structure of the laser, amplifier and modulator is based on III-V group materials.

10. The monolithic heterogeneous integrated optical device according to claim 9, characterized in that: include: The ridge waveguide, connecting waveguide and antenna grating are arranged on the silicon layer; The laser, amplifier and modulator each include a heat sink region, and a heat dissipation layer disposed between the heat sink region and the first metal layer and the second metal layer; The heat sink area of ​​the laser and amplifier is arranged on the thermal oxide layer; The heat sink area of ​​the modulator is arranged on the silicon layer.

11. The monolithic heterogeneous integrated optical device according to claim 7, characterized in that: include: In the laser, the ridge waveguide has the function of confining the light field in the direction toward the N-type evanescent light field coupling structure; In the amplifier, the ridge waveguide has a function of confining the light field in a direction toward the substrate.

Images