Method and device for preparing periodic microstructure

Abstract

The invention provides a method and a device for preparing a periodic microstructure, and belongs to the technical field of material processing, and the method specifically comprises the following steps: arranging a dielectric barrier discharge reaction device which is of a flat plate structure or a coaxial structure and sequentially comprises an electrode 1, an insulating medium 1, a discharge gap, a substrate material, an insulating medium 2 and an electrode 2 from top to bottom or from outside to inside, placing the dielectric barrier discharge reaction device in reaction gas, respectively connecting the electrode 1 and the electrode 2 to the output end and the grounding end of a high-voltage alternating current power supply, setting the frequency and the amplitude of the power supply, enabling a discharge air gap to generate filamentous discharge, and taking out the substrate material after a periodic microstructure is formed on the surface of the substrate material, so as to obtain the dielectric barrier discharge reaction device. And low-cost preparation of the periodic microstructure is realized.

Description

Technical Field

[0001] The invention belongs to the technical field of material processing, and in particular relates to a method and a device for preparing a periodic microstructure. Background Art

[0002] Periodic microstructures have important application prospects in radiation modulation, electromagnetic wave absorbers, photoelectric detection, high-resolution imaging, sensing, etc. Periodic microstructure preparation technology is a key prerequisite for the formation of functional devices. Periodic microstructures based on metals are an extremely important type in the field of periodic structure materials.

[0003] Laser processing uses the energy of light to reach a high energy density at the focal point after being focused by a lens, and relies on photothermal effect or photochemical reaction for processing. The use of laser processing technology to prepare periodic microstructures generally requires expensive laser systems, resulting in high production costs. In addition, during the processing process, the focus spot is usually controlled to perform single or multiple scans in a scanning manner, or a mask or photoresist is required, so the efficiency is low.

[0004] Reference 1: "Microstructure and corrosion behavior of laser induced periodic patterned titanium based alloy" (Optics and Laser Technology, 2019, 116: P196–213, R Kumari, W Pfleging, H Besser, JD Majumdar) describes the laser-induced preparation of periodic patterns on α-β titanium alloy. This method uses expensive excimer lasers and fiber lasers, respectively, using mask technology and scanning methods for micropatterning, which are inefficient.

[0005] Reference 2: "Fabrication of Periodic Microstructures on Nickel Template by Multi-beam Laser Interference" (Applied Mechanics and Materials, 2014, 618: P146-149, L Zhang, R Xiang, X Cao, S Li, ​​H Sun) (Multi-beam laser interference on nickel templates to prepare periodic microstructures, Applied Mechanics and Materials, Volume 618, August 2014, pp. 146-149) In this paper, laser interference is used to generate submicron periodic stripes and columnar structures on nickel templates. In order to avoid the melting and recasting of the nickel surface during laser direct writing, this method first spin-coats the photoresist on the nickel substrate, and then uses a dilute acid solution to etch the exposed part of the nickel substrate after laser processing to form a periodic corrosion stripe array. The process is relatively complicated.

[0006] Document 3: Chinese invention patent "CN113118633A", the patent name is "Method for preparing periodic microstructures on the surface of titanium alloy by nanosecond laser irradiation". The article describes the use of nitrogen as a protective gas to prepare micro-nano periodic structures on the surface of titanium alloy by nanosecond laser irradiation. By controlling the trajectory of the laser beam, micro-nano periodic structures with different shapes and sizes can be prepared on the surface of titanium alloy. This method uses a nanosecond fiber laser, a scanning speed of 5-15mm / s, and a scanning line spacing of 5-20μm, and the processing efficiency is low.

[0007] Therefore, technicians in this field are committed to developing a low-cost method and device for preparing periodic microstructures. By utilizing the periodic distribution characteristics of microdischarge, the preparation process of the periodic microstructure can be completed, thereby improving the reliability of the preparation process. Summary of the invention

[0008] To achieve the purpose of the present invention, the present invention adopts the following technical solutions: A method for preparing a periodic microstructure, specifically comprising: Step 1: pre-treat the substrate material; Step 2: a dielectric barrier discharge reaction device is provided, the structure of which is a flat plate structure or a coaxial structure, and from top to bottom, or from outside to inside, it is electrode 1, insulating medium 1, discharge air gap, substrate material, insulating medium 2 and electrode 2, and the dielectric barrier discharge reaction device is placed in the reaction gas; Step 3: Connect electrode 1 and electrode 2 to the output terminal and ground terminal of a high-voltage AC power supply, respectively, and set the frequency and amplitude of the power supply to cause filamentary discharge in the discharge air gap; Step 4: After a periodic microstructure is formed on the surface of the base material, the base material is taken out.

[0009] Furthermore, the base material is a metal material or a mixed material consisting of a metal and an insulating material.

[0010] Furthermore, the metal is any one of zinc, zinc alloy, copper, copper alloy, aluminum alloy, iron, iron alloy, titanium or titanium alloy.

[0011] Furthermore, the pretreatment of the substrate material includes ultrasonic cleaning, polishing, plasma surface treatment, sandblasting, shot blasting or laser surface treatment of the surface.

[0012] The beneficial effects that can be achieved by the present invention include: First, it achieves low-cost preparation of periodic microstructures. Second, it can realize the preparation of samples with sizes of decimeters or above. Third, it is adaptable to a variety of metal substrate materials and material forming and functionalization processes.

[0013] On the other hand, the present application provides a device for preparing a periodic microstructure, including a power supply regulating module, and adopts the above-mentioned method for preparing a periodic microstructure, specifically including: S1, based on the type of the substrate material, determines the abnormal processing of the microstructure under different setting amplitudes of the power supply, and obtains the available setting amplitude by using the abnormal processing and the processing time; S2, based on historical processing data of the microstructure at different processing frequencies of the available setting amplitudes, determining the deviation of the processing results of the microstructure between different processing frequencies, and determining the matching setting amplitude among the available setting amplitudes by using the deviation; S3 determines the matching processing frequency of the matching setting amplitude by utilizing the processing abnormality of the microstructure at different processing frequencies and combining the deviation of the processing data of the microstructure between the processing frequency and other processing frequencies; S4 determines the abnormality detection time according to the abnormality of the microstructure processing at different times of the matching processing frequency, controls the power regulation module to process the microstructure of the substrate material using the matching setting amplitude and the matching processing frequency, and determines whether the processing frequency needs to be adjusted using the detection result of the microstructure at the abnormality detection time.

[0014] A further technical solution is that the abnormal processing of the microstructure includes the number and distribution of locations where the microstructure has deviations.

[0015] A further technical solution is that the method for determining the abnormality detection time is: Determine the number of abnormal processing times of the microstructure at different times based on the abnormal processing conditions of the microstructure at different times under the matching processing frequency; The moment when the number of exception processing times does not meet the requirement is regarded as the abnormality detection moment.

[0016] A further technical solution is to determine whether it is necessary to adjust the processing frequency, which specifically includes: When the detection result of the microstructure at the abnormality detection moment is abnormal, it is determined that the processing frequency needs to be adjusted.

[0017] Other features and advantages will be described in the following description. The objects and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description and drawings.

[0018] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.

[0020] Figure 1 is a flow chart of a method for preparing a periodic microstructure; Figure 2 is a schematic diagram of a preparation process result for preparing a periodic microstructure; Figure 3 is a flow chart of a method for determining an available setting amplitude; Figure 4 is a flow chart of a method for determining a matching setting magnitude among available setting magnitudes; Figure 5 is a flow chart of a method for determining a matching process frequency of a matching setting amplitude. DETAILED DESCRIPTION

[0021] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted.

[0022] The terms "a", "an", "the", and "said" are used to indicate the presence of one or more elements / components / etc.; the terms "comprising" and "having" are used to express an open-ended inclusive meaning and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.

[0023] Example 1 To solve the above problems, according to one aspect of the present invention, Figure 1 As shown, a first aspect is provided, and the present invention proposes a method for preparing a periodic microstructure, which specifically includes: Step 1: pre-treat the substrate material; Furthermore, the base material is a metal material or a mixed material consisting of a metal and an insulating material.

[0024] Furthermore, the metal is any one of zinc, zinc alloy, copper, copper alloy, aluminum alloy, iron, iron alloy, titanium or titanium alloy.

[0025] Furthermore, the pretreatment of the substrate material includes ultrasonic cleaning, polishing, plasma surface treatment, sandblasting, shot blasting or laser surface treatment of the surface.

[0026] Step 2: a dielectric barrier discharge reaction device is provided, the structure of which is a flat plate structure or a coaxial structure, and from top to bottom, or from outside to inside, it is electrode 1, insulating medium 1, discharge air gap, substrate material, insulating medium 2 and electrode 2, and the dielectric barrier discharge reaction device is placed in the reaction gas; Furthermore, the reaction gas includes air, oxygen, nitrogen, ammonia, fluorine, hydrogen sulfide, sulfur dioxide, sulfur hexafluoride, carbon dioxide, chlorine, hydrogen chloride, argon, methane, ethane, propane, butane, ethylene, acetylene, formaldehyde, methyl chloride, Freon or a mixture thereof, which may be dry or contain water vapor.

[0027] Step 3: Connect electrode 1 and electrode 2 to the output terminal and ground terminal of a high-voltage AC power supply, respectively, and set the frequency and amplitude of the power supply to cause filamentary discharge in the discharge air gap; Furthermore, the thickness of the discharge air gap is 0.1 mm-10 mm.

[0028] Furthermore, the waveform of the AC high voltage power supply includes a sine wave, a square wave, a pulse wave, and a triangle wave.

[0029] Furthermore, the filamentary discharge includes filamentary discharge or a mixed discharge of filamentary discharge and other forms of discharge.

[0030] Step 4: Figure 2The present invention is a schematic diagram of a preparation process result of preparing a periodic microstructure. After the periodic microstructure is formed on the surface of the substrate material, the substrate material is taken out.

[0031] Example 2 In a second aspect, the present application provides a device for preparing a periodic microstructure, including a power supply regulating module, and adopts the above-mentioned method for preparing a periodic microstructure, specifically including: S1, based on the type of the substrate material, determines the abnormal processing of the microstructure under different setting amplitudes of the power supply, and obtains the available setting amplitude by using the abnormal processing and the processing time; Furthermore, the abnormal processing conditions of the microstructure include the number and distribution positions of the locations where the microstructure has deviations.

[0032] Specifically, Figure 3 As shown, the method for determining the available setting amplitude is: Based on the abnormal processing condition of the microstructure of the set power source at the set amplitude, determining the number of processing times of the microstructure of the set power source at the set amplitude having abnormal processing, and taking it as the number of abnormal processing times; Determine an exception processing coefficient based on the proportion of the number of exception processing times in the number of historical processing times, and determine a preset processing efficiency coefficient under the average value according to the average value of processing time in different historical processing times under the set amplitude; The ratio of the preset processing efficiency coefficient to the abnormal processing coefficient is used as the efficiency abnormality ratio, and the efficiency abnormality ratio is used to determine whether the setting amplitude is an available setting amplitude.

[0033] Further, when the efficiency abnormality ratio is less than a preset abnormality threshold, it is determined that the setting amplitude does not belong to the available setting amplitude.

[0034] Optionally, the method for determining the available setting amplitude is: According to the abnormal processing situation of the microstructure of the set power supply at the set amplitude, the number of processing times of the microstructure of the set power supply at the set amplitude having abnormal processing is determined, and the number is used as the abnormal processing number, and when the abnormal processing number does not meet the requirement, it is determined that the set amplitude does not belong to the available set amplitude; When the number of exception handling times meets the requirement: According to the processing time in different historical processing times under the set amplitude, the historical processing times with processing time longer than the preset processing time are taken as the delayed processing times, and when the delayed processing times do not meet the requirements, it is determined that the set amplitude does not belong to the available set amplitude; When the number of delayed processing times meets the requirements: Based on the number and distribution of locations where microstructures have deviations under different abnormal processing times, the microstructure processing abnormality coefficients under different abnormal processing times are determined. When there is an abnormal processing number where the microstructure processing abnormality coefficient does not meet the requirements: The number of abnormal processing times when the microstructure processing abnormality coefficient does not meet the requirements is used as the number of problem processing times, and when the number of problem processing times does not meet the requirements, it is determined that the setting amplitude does not belong to the available setting amplitude; When there is no abnormal processing number where the microstructure processing abnormality coefficient does not meet the requirements or when the problem processing times meet the requirements: Determine the abnormal processing coefficient according to the microstructure processing abnormality coefficients of different abnormal processing times and the proportion of the abnormal processing times in the historical processing times, and when the abnormal processing coefficient does not meet the requirements, determine that the setting amplitude does not belong to the available setting amplitude; When the exception handling coefficient meets the requirements: According to the average value of the processing time in different historical processing times under the set amplitude, a preset processing efficiency coefficient under the average value is determined, the ratio of the preset processing efficiency coefficient to the abnormal processing coefficient is used as the efficiency abnormality ratio, and the efficiency abnormality ratio is used to determine whether the set amplitude is an available set amplitude.

[0035] S2, based on historical processing data of the microstructure at different processing frequencies of the available setting amplitudes, determining the deviation of the processing results of the microstructure between different processing frequencies, and determining the matching setting amplitude among the available setting amplitudes by using the deviation; Specifically, the historical processing data of the microstructure includes the historical processing times of the microstructure and the processing results of the microstructure corresponding to different historical processing times.

[0036] Further, the deviation of the processing results of the microstructure between the processing frequencies is determined according to the deviation amount of the processing results of the microstructure between different processing frequencies.

[0037] Optional, such as Figure 4 As shown, the method for determining the matching setting amplitude in the available setting amplitude is: Determine the deviation amount of the microstructure processing results between different processing frequencies according to the deviation of the microstructure processing results between different processing frequencies; Based on the deviation of the processing results of the microstructure between different processing frequencies, a baseline processing result of the microstructure under the available setting amplitude is performed; According to the number of processing frequencies whose deviation from the reference processing result meets the requirement, it is determined whether the available setting amplitude is a matching setting amplitude.

[0038] In another embodiment, the method for determining the baseline processing result of the microstructure under the set amplitude is: According to the deviation of the microstructure processing result, the processing frequency is divided into different processing frequency intervals; The processing results of the microstructures at different processing frequencies corresponding to the processing frequency interval with the largest processing frequency are used as the benchmark processing results of the microstructures under the available setting amplitude.

[0039] Further, when the deviation from the reference processing result at the processing frequency is within a preset deviation range, the processing frequency is determined to be a processing frequency at which the deviation from the reference processing result meets the requirement.

[0040] Specifically, when the number of processing frequencies whose deviation from the reference processing result meets the requirement is greater than a preset number threshold, it is determined that the available setting amplitude is a matching setting amplitude.

[0041] Optionally, a method for determining a matching setting amplitude in the available setting amplitudes is: Determine the deviation of the processing results of the microstructures between the different processing frequencies according to the deviation of the processing results of the microstructures between the different processing frequencies, and when the deviation of the processing results of the microstructures between the different processing frequencies cannot meet the requirements, determine that the available setting amplitude does not belong to the matching setting amplitude; When there is an amount of deviation between the microstructure processing results that satisfies the required processing frequency: When the average deviation of the processing results of the microstructures between different processing frequencies is greater than a preset deviation threshold, it is determined that the available setting amplitude does not belong to the matching setting amplitude; When the average deviation of the microstructure processing results between different processing frequencies is not greater than the preset deviation threshold: Based on the deviation of the processing results of the microstructure between different processing frequencies, the processing frequencies whose processing results meet the requirements are divided into the same processing frequency group, and when there is no processing frequency group whose number of processing frequencies is greater than a preset number threshold, it is determined that the available setting amplitude does not belong to the matching setting amplitude; When there is a processing frequency group whose number of processing frequencies is greater than the preset number threshold: A processing frequency group whose number of processing frequencies is greater than a preset number threshold is used as an alternative processing frequency group, and processing frequency reliability coefficients of different alternative processing frequency groups are determined according to the number of processing frequencies of different alternative processing frequency groups and the deviation of microstructure processing results between the processing frequencies, and when there is no alternative processing frequency group whose processing frequency reliability coefficient meets the requirement, it is determined that the available setting amplitude does not belong to the matching setting amplitude; When the processing frequency reliability coefficient meets the required candidate processing frequency group: Based on the deviation of the processing results of the microstructure between different processing frequencies in the alternative processing frequency group with the largest processing frequency reliability coefficient, the baseline processing result of the microstructure under the available setting amplitude is determined, and according to the number of processing frequencies whose deviations from the baseline processing results meet the requirements, it is determined whether the available setting amplitude is a matching setting amplitude.

[0042] Furthermore, the baseline processing result of the microstructure under the available setting amplitude is the processing result of the microstructure corresponding to the processing frequency having the smallest deviation from the processing results of the microstructure between other processing frequencies in the alternative processing frequency group having the largest processing frequency reliability coefficient.

[0043] S3 determines the matching processing frequency of the matching setting amplitude by utilizing the processing abnormality of the microstructure at different processing frequencies and combining the deviation of the processing data of the microstructure between the processing frequency and other processing frequencies; Further, such as Figure 5 As shown, the method for determining the matching processing frequency of the matching setting amplitude is: Based on the abnormal processing of the microstructure at the processing frequency, determining the number of processing times at which the microstructure at the processing frequency has abnormalities, and using it as the number of abnormal processing times, and determining the abnormal proportion factor at the processing frequency based on the number ratio of the abnormal processing times; Determine the deviation of the microstructure processing data between the processing frequency and other processing frequencies according to the deviation of the microstructure processing data between the processing frequency and other processing frequencies, and determine the variation abnormality coefficient according to the proportion of the number of other processing frequencies whose deviation does not meet the requirement; The matching abnormality coefficient at the processing frequency is determined by multiplying the variation abnormality coefficient by the abnormality proportional factor, and the matching abnormality coefficient is used to determine whether the processing frequency is a matching processing frequency.

[0044] Specifically, the matching processing frequency is the processing frequency with the smallest matching abnormality coefficient.

[0045] Optionally, the method for determining the matching processing frequency of the matching setting amplitude is: Based on the abnormal processing of the microstructure at the processing frequency, determining the number of processing times at which the microstructure at the processing frequency has abnormalities, and using it as the number of abnormal processing times, when the number of abnormal processing times at the processing frequency does not meet the requirements, determining that the processing frequency does not belong to the matching processing frequency; When the number of exception handling times at the processing frequency meets the requirements: Determine the deviation of the microstructure processing data between the processing frequency and other processing frequencies according to the deviation of the microstructure processing data between the processing frequency and other processing frequencies, and determine that the processing frequency does not belong to the matching processing frequency when the deviation of the microstructure processing data between the processing frequency and other processing frequencies is greater than the deviation limit threshold; When there is a processing frequency among other processing frequencies whose deviation of the processing data of the microstructure between the processing frequency and the processing frequency is not greater than the deviation limit threshold: When the number of processing frequencies whose deviation amount of processing data of the microstructure between the processing frequency and the processing frequency is not greater than the deviation amount limiting threshold value among other processing frequencies does not meet the requirement: determining that the processing frequency does not belong to the matching processing frequency; When the number of processing frequencies whose deviation of the processing data of the microstructure between the processing frequencies and the processing frequency is not greater than the deviation limit threshold among other processing frequencies meets the requirement: Determine a basic exception processing coefficient based on the number of exception processing times at the processing frequency and the ratio of the number of exception processing times to the number of historical processing times at the processing frequency, and when the basic exception processing coefficient is within a preset exception coefficient interval, determine that the processing frequency does not belong to a matching processing frequency; When the basic abnormality processing coefficient is not within the preset abnormality coefficient range: Determine the deviation of the microstructure processing data between the processing frequency and other processing frequencies according to the deviation of the microstructure processing data between the processing frequency and other processing frequencies, and determine the variation abnormality coefficient according to the proportion of the number of other processing frequencies whose deviation does not meet the requirement; The matching exception coefficient at the processing frequency is determined by multiplying the basic exception processing coefficient by the exception scale factor, and the matching exception coefficient is used to determine whether the processing frequency is a matching processing frequency.

[0046] S4 determines the abnormality detection time according to the abnormality of the microstructure processing at different times of the matching processing frequency, controls the power regulation module to process the microstructure of the substrate material using the matching setting amplitude and the matching processing frequency, and determines whether the processing frequency needs to be adjusted using the detection result of the microstructure at the abnormality detection time.

[0047] Specifically, the method for determining the abnormality detection time is: Determine the number of abnormal processing times of the microstructure at different times based on the abnormal processing conditions of the microstructure at different times under the matching processing frequency; The moment when the number of exception processing times does not meet the requirement is regarded as the abnormality detection moment.

[0048] Further, determining whether the processing frequency needs to be adjusted includes: When the detection result of the microstructure at the abnormality detection moment is abnormal, it is determined that the processing frequency needs to be adjusted.

[0049] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device, equipment, and non-volatile computer storage medium embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0050] The above is a description of a specific embodiment of the specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0051] The above description is only one or more embodiments of this specification and is not intended to limit this specification. For those skilled in the art, one or more embodiments of this specification may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of one or more embodiments of this specification shall be included in the scope of the claims of this specification.

Claims

1. A method for preparing a periodic microstructure, characterized in that: Specifically include: Step 1: pre-treat the substrate material; Step 2: a dielectric barrier discharge reaction device is provided, the structure of which is a flat plate structure or a coaxial structure, and from top to bottom, or from outside to inside, it is electrode 1, insulating medium 1, discharge air gap, substrate material, insulating medium 2 and electrode 2, and the dielectric barrier discharge reaction device is placed in the reaction gas; Step 3: Connect electrode 1 and electrode 2 to the output terminal and ground terminal of a high-voltage AC power supply, respectively, and set the frequency and amplitude of the power supply to cause filamentary discharge in the discharge air gap; Step 4: After a periodic microstructure is formed on the surface of the base material, the base material is taken out.

2. A method for preparing a periodic microstructure according to claim 1, characterized in that: The base material is a metal material or a mixed material consisting of a metal and an insulating material.

3. A method for preparing a periodic microstructure according to claim 1, characterized in that: The metal is any one of zinc, zinc alloy, copper, copper alloy, aluminum alloy, iron, iron alloy, titanium or titanium alloy.

4. A method for preparing a periodic microstructure according to claim 1, characterized in that: The pretreatment of the substrate material includes ultrasonic cleaning, polishing, plasma surface treatment, sandblasting, shot blasting or laser surface treatment.

5. A method for preparing a periodic microstructure according to claim 1, characterized in that: The reaction gas includes air, oxygen, nitrogen, ammonia, fluorine, hydrogen sulfide, sulfur dioxide, sulfur hexafluoride, carbon dioxide, chlorine, hydrogen chloride, argon, methane, ethane, propane, butane, ethylene, acetylene, formaldehyde, methyl chloride, Freon or a mixture thereof, which may be dry or contain water vapor.

6. The method for preparing a periodic microstructure according to claim 1, characterized in that: The waveform of the high voltage AC power supply includes a sine wave, a square wave, a pulse wave, and a triangle wave.

7. A device for preparing a periodic microstructure, comprising a power regulation module, using a method for preparing a periodic microstructure according to any one of claims 1 to 6, characterized in that: Specifically include: Based on the type of the substrate material, determining the abnormal processing of the microstructure under different setting amplitudes of the power supply, and obtaining the available setting amplitude by using the abnormal processing and the processing time; Determine the deviation of the processing results of the microstructure between different processing frequencies based on the historical processing data of the microstructure with available setting amplitudes at different processing frequencies, and determine the matching setting amplitude among the available setting amplitudes by using the deviation; Determine the matching processing frequency of the matching setting amplitude by utilizing the abnormal processing conditions of the microstructure at different processing frequencies of the matching setting amplitude and combining the deviation of the processing data of the microstructure between the processing frequency and other processing frequencies; The abnormality detection time is determined according to the abnormality of the processing of the microstructure at different times according to the matching processing frequency, the power regulation module is controlled to process the microstructure of the substrate material using the matching setting amplitude and the matching processing frequency, and the detection result of the microstructure at the abnormality detection time is used to determine whether the processing frequency needs to be adjusted.

8. The device for preparing a periodic microstructure according to claim 7, characterized in that: The abnormal processing conditions of the microstructure include the number and distribution positions of the locations where the microstructure has deviations.

9. The device for preparing a periodic microstructure according to claim 7, characterized in that: The method for determining the available setting amplitude is: Based on the abnormal processing condition of the microstructure of the set power source at the set amplitude, determining the number of processing times of the microstructure of the set power source at the set amplitude having abnormal processing, and taking it as the number of abnormal processing times; Determine an exception processing coefficient based on the proportion of the number of exception processing times in the number of historical processing times, and determine a preset processing efficiency coefficient under the average value according to the average value of processing time in different historical processing times under the set amplitude; The ratio of the preset processing efficiency coefficient to the abnormal processing coefficient is used as the efficiency abnormality ratio, and the efficiency abnormality ratio is used to determine whether the setting amplitude is an available setting amplitude.

10. The device for preparing a periodic microstructure according to claim 7, characterized in that: The method for determining the matching processing frequency of the matching setting amplitude is: Based on the abnormal processing of the microstructure at the processing frequency, determining the number of processing times at which the microstructure at the processing frequency has abnormalities, and using it as the number of abnormal processing times, and determining the abnormal proportion factor at the processing frequency based on the number ratio of the abnormal processing times; Determine the deviation of the microstructure processing data between the processing frequency and other processing frequencies according to the deviation of the microstructure processing data between the processing frequency and other processing frequencies, and determine the variation abnormality coefficient according to the proportion of the number of other processing frequencies whose deviation does not meet the requirement; The matching abnormality coefficient at the processing frequency is determined by multiplying the variation abnormality coefficient by the abnormality proportional factor, and the matching abnormality coefficient is used to determine whether the processing frequency is a matching processing frequency.

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