Film coating equipment and method and film coating piece

Abstract

The embodiment of the invention provides film coating equipment, a film coating method and a film coating piece. The film coating equipment comprises a cavity, a frame body and at least two target material groups, the frame body is arranged in the cavity and comprises a first area, and the first area is used for containing the base body. The two target material groups are arranged on the frame body and are oppositely arranged; each target material group comprises an outer target material and an inner target material, in the thickness direction of the frame body, the projection of the outer target material on the frame body is located on the periphery of the first area, and the projection of the inner target material on the frame body is located in the first area. The projection of the outer target material on the frame body is located on the first periphery, the projection of the inner target material on the frame body is located in the first area, and the base body is located between the projection of the outer target material and the projection of the inner target material on the frame body, so that the inner target material and the outer target material form a closed magnetic field loop, and the density of a magnetic field is enhanced. The particle sputtering energy during film coating can be effectively increased, and the adhesive force of a film layer is improved.

Description

Technical Field

[0001] The present application relates to the field of film coating technology, and in particular to a film coating device and method, and a film coating part. Background Art

[0002] Sputtering coating (such as magnetron sputtering) is an important physical vapor deposition technology, which is widely used in the fields of electronic devices, optical coatings and functional films. At present, during the vacuum coating process, the coating chamber is evacuated to a vacuum state, but there is still oxygen in the chamber. When the black film layer is formed by sputtering, the film structure is relatively loose, and oxygen is easily absorbed during the coating process, resulting in a high rate of film stripping defects. Summary of the invention

[0003] In view of this, in order to solve at least one of the above technical problems, the embodiment of the present application provides a coating device. In addition, the embodiment of the present application also provides a coating method using the above coating device, and a coated part obtained by the coating method.

[0004] The embodiment of the present application provides a coating device for coating a substrate, the coating device comprising a cavity, a frame and at least two target material groups. The frame is arranged in the cavity and includes a first area, and the first area is used to place the substrate. Two target material groups are arranged on the frame, and the two target material groups are arranged opposite to each other. Each target material group includes an outer target material and an inner target material, and along the thickness direction of the frame, the projection of the outer target material on the frame is located at the periphery of the first area, and the projection of the inner target material on the frame is located within the first area.

[0005] The present application arranges the projection of the outer target on the frame to be located at the first periphery, the projection of the inner target on the frame to be located in the first region, and the substrate to be located between the projections of the outer target and the inner target on the frame, so that the inner and outer targets form a closed magnetic field loop, and the density of the magnetic field is enhanced. It can effectively increase the sputtering energy of particles during coating and improve the adhesion of the film layer. The closed magnetic field can enhance the binding effect of the magnetic field during the coating process, increase the thread of ion movement in the electromagnetic field, and thus increase the ion energy. It can also increase the probability of collision between ions and gas molecules, increase the ionization rate, and improve the adhesion of the film layer.

[0006] In some embodiments of the present application, each target set includes two outer targets and two inner targets.

[0007] In some embodiments of the present application, both the outer target and the inner target are chromium targets.

[0008] The present application also provides a coating method for the above coating device, comprising placing a substrate on the first area of ​​a frame, using a target material group to form multiple film layers on the surface of the substrate, and the outer target material and the inner target material of each target material group form a closed magnetic field loop.

[0009] In some embodiments of the present application, forming a plurality of film layers includes forming a primer layer on a substrate, forming a transition layer on a surface of the primer layer, forming a color layer on a surface of the transition layer, and forming an interference layer on a surface of the color layer.

[0010] In some embodiments of the present application, the formation pressure of the base layer is 0.15-0.40 Pa, the sputtering time is 60-70 min, and the bias rate is 0.

[0011] In some embodiments of the present application, the formation pressure of the transition layer is 0.20-0.45 Pa, the sputtering time is 40-60 min, and the bias rate is 50.

[0012] In some embodiments of the present application, the formation pressure of the color layer is 0.20-0.45 Pa, the sputtering time is 180-200 min, and the bias rate is 160-210.

[0013] In some embodiments of the present application, the formation pressure of the interference layer is 0.20-0.45 Pa, the sputtering time is 12.5-17.5 min, and the bias rate is 160-210.

[0014] An embodiment of the present application further provides a coated part, which is prepared by the above-mentioned coating method, and the coated part includes a substrate and at least one film layer formed on the surface of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of target material distribution of coating equipment in related technology.

[0016] Figure 2 It is a schematic diagram of a coating device according to one embodiment of the present application.

[0017] Figure 3 yes Figure 1 Magnetic field distribution diagram at point A of the coating equipment.

[0018] Figure 4 yes Figure 2 Magnetic field distribution diagram at point B of the coating equipment.

[0019] Figure 5 This is a picture of adhesion NG.

[0020] Figure 6 This is a picture showing that the adhesion is OK.

[0021] Description of main component symbols: Coating equipment 10 Base 500 Cavity 100 Frame 200 External target 300 Inner target 400 First Area 201 First target 301 Second target 302 The third target 401 Fourth target 402 Fifth target 303 Sixth target 304 Seventh target 403 The eighth target 404 The following specific implementation methods will further illustrate the present application in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0022] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0023] It should be noted that when an element is considered to be "connected" to another element, it may be directly connected to the other element or there may be a centrally disposed element at the same time. When an element is considered to be "disposed on" another element, it may be directly disposed on the other element or there may be a centrally disposed element at the same time.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0025] See also Figure 1 and Figure 3 In the related art, the film coating method of the black film system is usually to install four pairs of targets in the coating chamber 100, and the four pairs of targets are all located on the periphery of the substrate 500 to be coated. Each pair of targets is composed of two targets, and the two targets can only realize the magnetic field circuit of a single target, and the magnetic field action area is located on the outside of the product. Regarding the coating of the black film system, the inventors found that because the black film layer is usually coated with a CrC target, CrC may form a non-equilibrium phase or an incomplete compound during the deposition process, resulting in more defects and pores inside the film layer, which reduces the density of the film layer, making it easier to absorb oxygen and moisture, affecting the adhesion of the film layer. During the coating process, the C element easily absorbs oxygen, resulting in a high rate of poor film stripping.

[0026] See also Figure 2 and Figure 4The embodiment of the present application provides a coating device 10 for coating a substrate 500. The coating device 10 includes a chamber 100, a frame 200, and at least two target material groups. The frame 200 is disposed in the chamber 100 and includes a first area 201, and the first area 201 is used to place the substrate 500. The two target material groups are located on one side of the frame 200 and are spaced apart from the frame 200. Each target material group includes an outer target material 300 and an inner target material 400. Along the thickness direction of the frame 200, the projection of the outer target material 300 on the frame 200 is located on the periphery of the first area 201, and the projection of the inner target material 400 on the frame 200 is located within the first area 201.

[0027] The present application sets the projection of the outer target 300 on the frame 200 to be located at the first periphery, and the projection of the inner target 400 on the frame 200 to be located within the first area 201. When the coating substrate 500 revolves, the substrate 500 is located between the projections of the outer target 300 and the inner target 400 on the frame 200, and forms a Figure 4 The closed magnetic field loop shown in the figure can enhance the density of the magnetic field by forming a closed magnetic field loop. Therefore, the sputtering energy of particles during film coating can be effectively increased, and the adhesion of the film layer can be improved. Moreover, the closed magnetic field can enhance the binding effect of the magnetic field during the film coating process, increase the thread of ion movement in the electromagnetic field, and thus increase the ion energy. Moreover, it can also increase the probability of collision between ions and gas molecules, increase the ionization rate, and improve the adhesion of the film layer.

[0028] See also Figure 2 In one embodiment of the present application, each target material group includes two outer targets 300 and two inner targets 400. By setting the two targets as a group, a closed magnetic field loop can be formed between the inner target 400 and the outer target 300, which effectively increases the particle sputtering energy during the coating process and improves the bonding force between the black film system layers. The enhanced particle energy and controlled deposition conditions help to improve the adhesion of the film layer, reduce the risk of film layer shedding, and improve the long-term stability of the film. The closed magnetic field helps to prepare a more uniform film, reduce the non-uniformity of the film thickness, and make the film layer formed on the surface of the entire substrate 500 more consistent. The closed magnetic field structure between the inner and outer targets 300 can effectively concentrate and enhance the particle energy during the coating process, promote the generation of high-energy particles, and improve the deposition quality of the film layer. In one embodiment, the plurality of target material groups include a first target 301, a second target 302, a third target 401, a fourth target 402, a fifth target 303, a sixth target 304, a seventh target 403, and an eighth target 404.

[0029] In one embodiment of the present application, the outer target 300 and the inner target 400 are both chromium targets.

[0030] See also Figure 2The present application also provides a coating method applied to the above-mentioned coating device 10, comprising the following steps: Step S10 , placing the substrate 500 on the first area 201 of the frame 200 .

[0031] Step S20, using a target material group to form multiple film layers on the surface of the substrate 500, and the outer target material 300 and the inner target material 400 of each target material group form a closed magnetic field loop. Among them, under the action of the Lorentz force in the electromagnetic field, the ions will spirally move along the direction of the magnetic field lines, and the ions will collide with each other, and the high-energy ions will break free from the magnetic field and escape. Therefore, by forming a closed magnetic field between the outer target material 300 and the inner target material 400, the binding effect of the magnetic field can be enhanced, and the high-density plasma can better peel off the low-quality particle clusters on the surface of the film layer, retain the high-quality particle clusters, and make the film layer more dense and delicate. On the contrary, a loose film layer will adsorb more oxygen in the gaps of the film layer, which is easy to cause poor film stripping. A dense film layer can reduce the occurrence of this undesirable situation.

[0032] In some embodiments, before forming a plurality of film layers on the surface of the substrate 500 using the target material group, the following steps are also included: Step S11, target washing. In some embodiments, the target is washed at a pressure of 0.3-0.6 Pa for 90-120 min. Argon gas is introduced into the chamber 100 with a gas flow rate of 600-1000 sccm. The target voltage is 200-400 V. The bias rate is 60-80%. Please refer to Figure 3 In some embodiments, the current of the first target 301, the third target 401, the fifth target 303, the seventh target 403 and the eighth target 404 are all 16-18A.

[0033] Step S12, evacuating. In some embodiments, the temperature of the coating chamber 100 is raised to 120° C. The coating chamber 100 is evacuated to a vacuum state at a pressure of 6×10-3Pa to 8×10-3Pa.

[0034] Step S13, baking under pressure at a temperature of 115-125° C. for 1.3-1.7 hours.

[0035] Step S14, adjust the pressure of the vacuum chamber 100 to 0.3-0.6 Pa, turn on the column arc power supply, and perform the first main arc bombardment. The column arc current is 58-60A, the arc current is 58-60A, and the temperature is maintained at 120°C for 30 minutes.

[0036] Step S15, baking under pressure at a temperature of 115-125° C. for 1-1.2 hours.

[0037] Step S16, adjust the pressure of the vacuum chamber 100 to 0.3-0.6 Pa, turn on the column arc power supply, perform the second main arc bombardment, the column arc current is 58-60A, the arc current is 35-40A, maintain the temperature at 120°C, and continue for 30 minutes.

[0038] In one embodiment of the present application, forming a plurality of film layers comprises the following steps: Step S21 , forming a primer layer on the substrate 500 .

[0039] In one embodiment of the present application, the formation pressure of the base layer is 0.15-0.40 Pa. The sputtering time is 60-70 min. The bias rate is 0. The sputtering temperature is 100° C. The current applied to the third target 401 is 8A, and the current applied to the seventh target 403 is 11.8A to 12.2A.

[0040] Step S22, forming a transition layer on the surface of the base layer.

[0041] In one embodiment of the present application, the formation pressure of the transition layer is 0.20-0.45 Pa, the sputtering time is 40-60 min, and the bias rate is 50. The sputtering temperature is 100° C. The current applied to the third target 401 is 12A, and the current applied to the seventh target 403 is 12A.

[0042] Step S23, forming a color layer on the surface of the transition layer.

[0043] In one embodiment of the present application, the pressure for forming the color layer is 0.20-0.45 Pa, the sputtering time is 180-200 min, the bias rate is 160-210, the sputtering temperature is 100° C. The current applied to the first target 301 is 12A, and the current applied to the fifth target 303 is 12A.

[0044] Step S24, forming an interference layer on the surface of the color layer.

[0045] In one embodiment of the present application, the formation pressure of the interference layer is 0.20-0.45 Pa, the sputtering time is 12.5-17.5 min, the bias rate is 160-210, the sputtering temperature is 100° C. The current applied to the first target 301 is 12A, and the current applied to the fifth target 303 is 12A.

[0046] Compared with the prior art, the coating method provided in the embodiment of the present application has the following beneficial effects: By positioning the projection of the outer target 300 on the frame 200 at the periphery of the first region 201 and the projection of the inner target 400 on the frame 200 within the first region 201, the outer target 300 and the inner target 400 form a closed magnetic field loop. Under the action of the Lorentz force in the electromagnetic field, ions will spirally move along the direction of the magnetic field lines, ions will collide with each other, and ions with high energy will break free from the magnetic field and escape. Therefore, by forming a closed magnetic field between the outer target 300 and the inner target 400, the binding effect of the magnetic field can be enhanced, and high-density plasma can better peel off low-quality particle clusters on the surface of the film layer, retain high-quality particle clusters, and make the film layer more dense and delicate. On the contrary, a loose film layer will adsorb more oxygen in the gaps of the film layer, which is easy to cause poor film removal. A dense film layer can reduce the occurrence of this undesirable situation.

[0047] An embodiment of the present application also provides a coated part, which is prepared by the above-mentioned coating method. The coated part includes a substrate 500 and at least one film layer formed on the surface of the substrate 500. The film layer prepared by the above-mentioned coating method is denser and reduces the defective rate of demolding.

[0048] The above coating method is further described below through specific embodiments.

[0049] Example 1 Step S10 , placing the substrate 500 on the first area 201 of the frame 200 .

[0050] Step S11, raising the temperature of the coating chamber 100 to 120° C. Pumping the coating chamber 100 to a vacuum state at a pressure of 6×10-3Pa to 8×10-3Pa.

[0051] Step S12, baking under pressure at a temperature of 115-125° C. for 1.3-1.7 hours.

[0052] Step S13, adjust the pressure of the vacuum chamber 100 to 0.3-0.6 Pa, turn on the column arc power supply, and perform the first main arc bombardment. The column arc current is 58-60A, the arc current is 58-60A, and the temperature is maintained at 120°C for 30 minutes.

[0053] Step S14, baking under pressure at a temperature of 115-125° C. for 1-1.2 hours.

[0054] Step S15, adjust the pressure of the vacuum chamber 100 to 0.3-0.6Pa, turn on the column arc power supply, perform the second main arc bombardment, the column arc current is 58-60A, the arc current is 35-40A, maintain the temperature at 120°C, and continue for 30 minutes.

[0055] Step S20 , using the target set to form multiple film layers on the surface of the substrate 500 , wherein the projection of the outer target 300 on the frame 200 is located at the periphery of the first region 201 , and the projection of the inner target 400 on the frame 200 is located within the first region 201 .

[0056] Step S21, forming a primer layer on the substrate 500. Optionally, the formation pressure of the primer layer is 0.15-0.40 Pa. The sputtering time is 60-70 min. The bias rate is 0. The sputtering temperature is 100° C. The current applied to the third target 401 is 8A, and the current applied to the seventh target 403 is 11.8A to 12.2A.

[0057] Step S22, forming a transition layer on the surface of the base layer. Optionally, the formation pressure of the transition layer is 0.20-0.45 Pa, the sputtering time is 40-60 min, and the bias rate is 50. The sputtering temperature is 100° C. The current applied to the third target 401 is 12A, and the current applied to the seventh target 403 is 12A.

[0058] Step S23, forming a color layer on the surface of the transition layer. Optionally, the pressure for forming the color layer is 0.20-0.45 Pa, the sputtering time is 180-200 min, and the bias rate is 160-210. The sputtering temperature is 100° C. The current applied to the first target 301 is 12A, and the current applied to the fifth target 303 is 12A.

[0059] Step S24, forming an interference layer on the surface of the color layer. Optionally, the formation pressure of the interference layer is 0.20-0.45 Pa, the sputtering time is 12.5-17.5 min, and the bias rate is 160-210. The sputtering temperature is 100° C. The current applied to the first target 301 is 12A, and the current applied to the fifth target 303 is 12A.

[0060] Comparative Example 1 The difference from Example 1 is that according to Figure 1 Target distribution and target arrangement.

[0061] The coated parts prepared in Example 1 and Comparative Example 1 were subjected to an adhesion test (hundred-grid test).

[0062] The test method is as follows: first, cut the product into four sections with pliers from the four Splits on the long side, wipe the sample test area with absorbent cotton or dust-free cloth dipped in alcohol, and ensure that the test area has no defects such as film peeling / dirt / discoloration / scratches and bruises. Clamp the product on the fixture, ensure that the product is clamped steadily, and do not tilt it. Place the fixture under the Struers Durascan-70 or Duramin-40 lens. Open the test software parameter settings: indenter pressure 10Kgf, duration 10S, create a new indentation, select the test type as Vickers, measurement method as HV10, Durascan-70: objective lens magnification 4, focal length 1, Duramin-40: objective lens magnification 2.5, (objective lens magnification and focal length are the parameters recommended by the supplier, and can be adjusted according to actual conditions in various places to ensure a clear field of view), click Next. Adjust the center of the product plane to the center of the field of view, 2*2 matrix parameters. After performing indentation on 8 locations in turn, stick 51596 tape on the test area, press it tightly and then tear it off to remove debris. Wipe the indentation area with absorbent cotton or dust-free cloth dipped in alcohol, place the fixture and product on the Keyence VHX 6000 / 7000 platform, first use low magnification to find the indentation in the field of view, then change to 300 magnification, adjust the clarity and brightness until the demolding and non-demolding areas are clearly contrasted, and save the picture. Export the picture, use the automatic area measurement function, adjust the photo contrast until the demolding area is accurately displayed, then denoise the photo, delete the indentation feature points in the diamond indentation, and finally measure the area. NG pictures such as Figure 5 As shown, OK picture as Figure 6 shown.

[0063] The test results are shown in Table 1 below.

[0064] Table 1 Comparison of adhesion yield between Example 1 and Comparative Example 1 As can be seen from Table 1, the defective rate of Example 1 is significantly lower than that of Comparative Example 1. It can be seen that the present application sets the projection of the outer target 300 on the frame 200 to be located at the first periphery, and the projection of the inner target 400 on the frame 200 to be located in the first area 201. The outer target 300 and the inner target 400 can surround the substrate 500 to form a closed magnetic field loop, and the density of the magnetic field is enhanced. It can effectively increase the sputtering energy of particles during coating and improve the adhesion of the film layer. The closed magnetic field can enhance the binding effect of the magnetic field during the coating process, increase the thread of ion movement in the electromagnetic field, and thus increase the ion energy. It can also increase the probability of collision between ions and gas molecules, increase the ionization rate, and improve the adhesion of the film layer.

[0065] The above embodiments are only used to illustrate the technical solution of the present application and are not intended to limit it. Although the present application has been described in detail with reference to the preferred embodiments, a person of ordinary skill in the art should understand that the technical solution of the present application may be modified or replaced by equivalents without departing from the spirit and essence of the technical solution of the present application.

Claims

1. A coating device for coating a substrate, characterized in that: The coating equipment comprises: Cavity; a frame, disposed in the cavity and comprising a first area, wherein the first area is used to place the substrate; and At least two target material groups are arranged on the frame, and the two target material groups are arranged opposite to each other. Each target material group includes an outer target and an inner target. Along the thickness direction of the frame, the projection of the outer target on the frame is located at the periphery of the first area, and the projection of the inner target on the frame is located within the first area.

2. The coating device according to claim 1, characterized in that: Each of the target sets includes two outer targets and two inner targets.

3. The coating device according to claim 1, characterized in that: The outer target and the inner target are both chromium targets.

4. A coating method applied to the coating device as claimed in claim 1, characterized in that: include: placing the substrate on the first area of ​​the frame; The target material group is used to form a plurality of film layers on the surface of the substrate, and the outer target material and the inner target material of each target material group form a closed magnetic field loop.

5. The coating method according to claim 4, characterized in that: The forming of a plurality of film layers comprises: forming a primer layer on the substrate; forming a transition layer on the surface of the primer layer; forming a color layer on the surface of the transition layer; An interference layer is formed on the surface of the color layer.

6. The coating method according to claim 5, characterized in that: The formation pressure of the base layer is 0.15-0.40 Pa, the sputtering time is 60-70 min, and the bias rate is 0.

7. The coating method according to claim 5, characterized in that: The formation pressure of the transition layer is 0.20-0.45 Pa, the sputtering time is 40-60 min, and the bias rate is 50.

8. The coating method according to claim 5, characterized in that: The formation pressure of the color layer is 0.20-0.45 Pa, the sputtering time is 180-200 min, and the bias rate is 160-210.

9. The coating method according to claim 5, characterized in that: The formation pressure of the interference layer is 0.20-0.45 Pa, the sputtering time is 12.5-17.5 min, and the bias rate is 160-210.

10. A coated part, prepared by the coating method according to any one of claims 4 to 9, characterized in that: The film-coated component includes a substrate and at least one film layer formed on the surface of the substrate.

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