Photomask film detection device and photoetching machine
By designing a photocoat film detection device that utilizes the difference in gas flow, the problem of the failure of the photocoat film in the prior art is solved, and the rapid and accurate judgment of the damage of the photocoat film is achieved, and product scrapping and heavy industry are avoided.
Patent Information
- Application Number
- CN202311335334.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-13
- Publication Date
- 2025-04-15
AI Technical Summary
Existing photocap film detection equipment cannot effectively identify whether the photocap film is damaged, resulting in a large amount of product scrapping and heavy industry when the photocap film is damaged.
A photocoat film detection device is designed, and whether there is damage to the photocoat film to be detected is determined by the difference in gas flow.
It realizes rapid and accurate judgment of the damage to the mask film, and avoids product scrapping and heavy industry caused by the damage to the mask film.
Smart Images
Figure CN119827060A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a mask film detection device and a photolithography machine. Background Art
[0002] Mask pellicle is a transparent film covering the mask to prevent dust from contaminating the graphic surface of the mask. Existing mask inspection, such as relying on the mask scanning system of the lithography machine or other mask defect detection equipment, can only identify whether there are stains and wrinkles on the mask film, but cannot identify whether the mask film is damaged. Once the mask film is damaged, it will lead to the scrapping and rework of a large number of products. Summary of the invention
[0003] The embodiments of the present application provide a mask film detection device and a photolithography machine, which can determine whether the mask film is damaged to prevent the mask film from being damaged while the production process continues, resulting in a large number of products being scrapped and reworked.
[0004] The embodiments of the present application adopt the following technical solutions:
[0005] In a first aspect, a photomask film detection device is provided, the photomask film detection device comprising a first purge unit, a second purge unit, a reference photomask film, an air intake device and a detection module. The first purge unit is arranged opposite to the photomask film to be inspected, and is configured to purge gas toward the photomask film to be inspected. The second purge unit is arranged opposite to the reference photomask film, and is configured to purge gas toward the reference photomask film. The air intake device is connected to the first purge unit through a first pipeline, and is connected to the second purge unit through a second pipeline. The detection module is connected to the first pipeline and the second pipeline, and is configured to detect the flow difference of the gas in the first pipeline and the second pipeline.
[0006] The air intake device distributes the gas input to the first purge unit and the second purge unit through the first pipeline and the second pipeline, and sets a control by controlling variables, that is, comparing the gas flow rates in the first pipeline and the second pipeline, and judging whether the photomask film to be inspected is damaged based on the difference in gas flow rates. Since the reference photomask film is equivalent to the photomask film in an intact state, the gas flow rates in the first pipeline and the second pipeline should be roughly the same when the photomask film to be inspected is intact. If there is a significant difference between the two, it means that the photomask film to be inspected is damaged. The above method can make a quick and accurate judgment on whether the photomask film to be inspected is damaged, avoiding the situation where a large number of products are scrapped and reworked due to the damaged photomask film while the production process is still going on.
[0007] As a possible implementation, the first pipeline includes a first main route and a first branch route, the first main route is connected to the air intake device and the first purge unit, and the first branch route is connected to the first main route. The second pipeline includes a second main route and a second branch route, the second main route is connected to the air intake device and the second purge unit, and the second branch route is connected to the second main route. The detection module includes a differential flow sensor and a processor. The differential flow sensor is connected between the first branch and the second branch. The processor is connected to the differential flow sensor. The processor is configured to receive a gas flow difference, determine whether the gas flow difference is greater than a set threshold, and if so, determine that the mask film to be inspected is damaged.
[0008] As a possible implementation, the cross-sectional area of the first pipeline is equal to the cross-sectional area of the second pipeline. The first pipeline is connected between the first purge unit and the air intake device, and the second pipeline is connected between the second purge unit and the air intake device. The setting that the cross-sectional area of the first pipeline is equal to the cross-sectional area of the second pipeline ensures that the difference in gas flow measured by the detection module is caused by damage to the mask film to be inspected, rather than the difference in the cross-sectional area of the first pipeline and the second pipeline.
[0009] As a possible implementation method, the range of the gas purged by the first purge unit at least covers the surface of the inspected mask film opposite to the first purge unit; and / or the range of the gas purged by the second purge unit at least covers the surface of the reference mask film opposite to the second purge unit.
[0010] As a possible implementation method, the orthographic projection of the second purge unit on the plane where the reference mask film is located is located within the boundary of the reference mask film. In order to ensure the rigor of the comparison, it is necessary to ensure that the reference mask film is at least equal to the size of the second purge unit to prevent the reference mask film from being too small, and the gas purged by the second purge unit from escaping into the air instead of hitting the reference mask film, which causes the difference in gas flow measured by the detection module to misjudge the damage of the mask film to be inspected.
[0011] As a possible implementation, the distance between the first purge unit and the mask film to be inspected is equal to the distance between the second purge unit and the reference mask film, which ensures the rigor of the comparison and improves the accuracy of determining whether the mask film to be inspected is damaged.
[0012] In a second aspect, a photolithography machine is provided, comprising the photomask film detection device as described in the first aspect and any possible implementation, and further comprising a light loading port. The photomask loading port comprises a stage for carrying the photomask film to be inspected.
[0013] As a possible implementation, the mask film to be inspected includes a first end and a second end in a first direction, the first purge unit extends along the second direction, and the first direction and the second direction intersect. The lithography machine also includes a robotic arm, which is used to grab the mask film to be inspected and move the mask film to be inspected relative to the first purge unit along the first direction, so that the mask film to be inspected passes through the first purge unit from its first end to the second end. The robotic arm of the lithography machine will grab the mask film to be inspected and move along a fixed trajectory, that is, move along the first direction, and the first purge unit extends along the second direction, intersecting the first direction, so that the first purge unit can purge the entire mask film to be inspected, preventing parts of the mask film to be inspected from being not purged, and avoiding the occurrence of a large number of products being scrapped and reworked due to damage to the omitted parts.
[0014] As a possible implementation, the size of the first purge unit in the second direction is greater than or equal to the size of the mask film to be inspected in the second direction. The size of the first purge unit in the second direction is greater than or equal to the size of the mask film to be inspected in the second direction, which ensures that the first purge unit purges the entire mask film to be inspected, preventing parts of the mask film to be inspected from being left unpurged, and avoiding the occurrence of a large number of product scrapping and rework due to damage to the omitted parts.
[0015] As a possible implementation, the lithography machine also includes an operation panel, which is connected to the detection module, and is used to display whether the photomask film to be detected is damaged according to the detection data sent by the detection module. Through the intuitive display of the operation panel, the management personnel can quickly find out whether the photomask film to be detected is damaged, which reduces the occurrence of damaged photomask films mixed into the production process due to the carelessness of the management personnel. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] In order to more clearly illustrate the technical solutions in the present application, the following briefly introduces the drawings required to be used in some embodiments of the present application. Obviously, the drawings described below are only drawings of some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the products involved in the embodiments of the present application, the actual process of the method, the actual timing of the signal, etc.
[0017] Figure 1 A composition and connection block diagram of a mask film detection device provided for some embodiments of the present application;
[0018] Figure 2 A schematic diagram of gas flow rates of a first pipeline and a second pipeline measured by a detection module when a mask film to be inspected is damaged is provided for some embodiments of the present application;
[0019] Figure 3 A schematic structural diagram of a mask film detection device provided for some embodiments of the present application;
[0020] Figure 4 A relationship diagram between a second purge unit and a reference mask film size provided for some embodiments of the present application;
[0021] Figure 5 A simplified structural diagram of a photolithography machine provided for some embodiments of the present application;
[0022] Figure 6 An overall structural diagram of a photolithography machine provided for some embodiments of the present application;
[0023] Fig. 7A A schematic diagram of a case where the size of a first purge unit in the second direction is smaller than the size of a mask film to be inspected in the second direction, provided in some embodiments of the present application;
[0024] Figure 7B A schematic diagram of a case where the size of a first purge unit in the second direction is equal to the size of a mask film to be inspected in the second direction provided in some embodiments of the present application;
[0025] Figure 8 A composition diagram of a lithography machine provided for some embodiments of the present application. DETAILED DESCRIPTION
[0026] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments provided by the present application, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present application.
[0027] In the description of the present application, it should be understood that, unless the context otherwise requires, the term "including" is interpreted as an open, inclusive meaning throughout the specification and claims, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present application. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics described may be included in any one or more embodiments or examples in any appropriate manner.
[0028] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.
[0029] The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.
[0030] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.
[0031] Photolithography is a very important process in semiconductor manufacturing. It is the process of transferring chip patterns on a series of photomasks to the corresponding layers of silicon wafers through exposure. It is considered to be the core step in large-scale integrated circuit manufacturing. The series of complex and time-consuming photolithography processes in semiconductor manufacturing are mainly completed by corresponding photolithography machines.
[0032] A mask, also called a photomask, is a mother plate made of quartz that can be used in the semiconductor exposure process. It takes more than one mask to manufacture a chip. The 14nm process requires about 60 masks, and the 7nm process may require 80 or even more masks. Different processes have different requirements for mask accuracy. The more advanced the process, the higher the requirements for mask accuracy. Therefore, inspection of the mask after manufacturing is crucial.
[0033] In order to prevent the pattern surface of the mask from being contaminated by dust, a transparent film is covered on the mask, which is called a mask pellicle. Existing mask inspection, such as relying on the mask scanning system of the lithography machine or other mask defect detection equipment, can only identify whether the mask film has stains or wrinkles, but cannot identify whether the mask film is damaged. Once the mask film is damaged, it will lead to the scrapping and rework of a large number of products.
[0034] In view of this, the present application provides a photomask film detection device, such as Figure 1 As shown, Figure 1 The composition and connection block diagram of the photomask film detection device are shown. Figure 1The mask film detection device 10 includes a first purge unit 1, a second purge unit 2, a reference mask film 3, an air intake device 4 and a detection module 5. Among them, the first purge unit 1 is arranged opposite to the mask film 8 to be inspected, and is configured to purge gas to the mask film 8 to be inspected. The second purge unit 2 is arranged opposite to the reference mask film 3, and is configured to purge gas to the reference mask film 3. The air intake device 4 is connected to the first purge unit 1 through the first pipeline 7, and is connected to the second purge unit 2 through the second pipeline 6, and is configured to transmit gas to the first purge unit 1 and the second purge unit 2. The detection module 5 is connected to the first pipeline 7 and the second pipeline 6, and is configured to detect the flow rate of gas in the first pipeline 7 and the second pipeline 6, and judge whether the mask film 8 to be inspected is damaged according to the difference in the gas flow rate in the first pipeline 7 and the second pipeline 6.
[0035] The reference mask film 3 is an intact mask film, and the surface of the reference mask film is a flat surface. For example, the reference mask film 3 is placed on a horizontal plane, and the reference mask film 3 can be used as a reference for the mask film to be tested, so as to compare and determine whether the mask film to be tested is damaged. If the mask film to be tested is intact, then the gas purged by the first purge unit 1 flows to the surface of the mask film to be tested, which is equivalent to flowing to a flat horizontal plane. In other words, the situation in which the gas purged by the first purge unit 1 flows to the mask film to be tested is similar to the situation in which the gas purged by the second purge unit 2 flows to the reference mask film 3. Then the gas flow in the first pipeline 7 detected by the detection module 5 should be roughly the same as the gas flow in the second pipeline 6.
[0036] If the mask film to be inspected is damaged, the gas purged by the first purge unit 1 flowing toward the surface of the mask film to be inspected is no longer equivalent to flowing toward a flat horizontal plane, because a part of the purged gas will continue to flow through the gaps in the damaged mask film to be inspected, which is equivalent to this part of the gas being blown toward a location outside the flat horizontal plane. Therefore, the situation in which the gas purged by the first purge unit 1 flows toward the mask film to be inspected is different from the situation in which the gas purged by the second purge unit 2 flows toward the reference mask film 3. Therefore, the gas flow in the first pipeline 7 detected by the detection module 5 will be significantly different from the gas flow in the second pipeline 6.
[0037] For example, Figure 2 As shown, Figure 2 The figure shows the gas flow rates of the first pipeline and the second pipeline measured by the detection module when the mask film to be inspected is damaged. Figure 2There are two figures (A) and (B). Figure (A) shows the gas flow in the second pipeline detected by the detection module, and Figure (B) shows the gas flow in the first pipeline detected by the detection module. The horizontal axis in both figures (A) and (B) shows the change of time, and the vertical axis shows the change of gas flow.
[0038] according to Figure 2 It can be seen that since the surface of the reference mask film is equivalent to a horizontal plane, the gas blown by the second purge unit to the reference mask film is uniform, and the gas flow delivered to the second pipeline by the air intake device is also uniform, and there will be no sudden increase or decrease in the gas flow, so it is reflected in Figure 2 (A) in the figure is a horizontal line. Once the mask film to be inspected is damaged, the flow rate and velocity of the gas at the damaged part will change compared with the undamaged part. Therefore, the flow rate of the gas delivered to the first pipeline by the air intake device will change, which is reflected in Figure 2 (B) shows the surge in gas flow rate from T1 to T2.
[0039] It should be understood that the gas mentioned in the embodiments of the present application is a gas that does not affect the normal function and use of the mask and the mask film and has no side effects on the human body, including but not limited to clean compressed air.
[0040] The air intake device 4 distributes the gas input to the first purge unit 1 and the second purge unit 2 through the first pipeline 7 and the second pipeline 6, and sets a control by controlling variables, that is, comparing the gas flow rates in the first pipeline and the second pipeline, and judging whether the photomask film to be inspected is damaged based on the difference in gas flow rates. Since the reference photomask film is equivalent to the photomask film in an intact state, the gas flow rates in the first pipeline and the second pipeline should be roughly the same when the photomask film to be inspected is intact. If there is a significant difference between the two, it means that the photomask film to be inspected is damaged. The above method can make a quick and accurate judgment on whether the photomask film to be inspected is damaged, avoiding the occurrence of a large number of product scrapping and rework due to the damage of the photomask film while the production process is still going on.
[0041] As a possible implementation, Figure 3 As shown, Figure 3 The structure of the photomask film detection device is shown. Figure 3The first pipeline 7 includes a first main path 71 and a first branch path 72, the first main path 71 connects the air intake device 4 and the first purge unit 1, and the first branch path 72 is connected to the first main path 71. The second pipeline 6 includes a second main path 61 and a second branch path 62, the second main path 61 connects the air intake device 4 and the second purge unit 2, and the second branch path 62 is connected to the second main path 61. The detection module 5 includes a differential flow sensor 51 and a processor 52. Among them, the differential flow sensor 51 is connected between the first branch path 71 and the second branch path 72, and is used to detect the gas flow in the first pipeline 7 and the second pipeline 6, and obtain the gas flow difference. The processor 52 is connected to the differential flow sensor 51, and is configured to receive the gas flow difference, and determine whether the gas flow difference is greater than a set threshold. If so, it is determined that the mask film to be inspected is damaged.
[0042] The differential flow sensor 51 can measure the gas flow of the first branch 72 and the second branch 62 and calculate the gas flow difference. Since the first branch 72 and the second branch 62 are connected to the first main road 71 and the second main road 61 respectively, and the first main road 71 and the second main road 61 are connected to the first purge unit 1 and the second purge unit 2 respectively, they are the gas supply channels of the first purge unit 1 and the second purge unit 2. Therefore, the gas flow of the first branch 72 and the second branch 62 can reflect the gas flow of the first pipeline 7 and the second pipeline 6.
[0043] After the differential sensor 51 obtains the gas flow rate of the first branch 72 and the second branch 62, it will calculate the gas flow rate difference. For example, when the photomask film 8 to be inspected is intact, the gas difference is close to 0, and when the photomask film 8 to be inspected is damaged, the gas flow rate of the first branch 72 is much greater than the gas flow rate of the second branch 62, and the gas flow rate difference is the difference between the two, and the gas flow rate difference value is large. By comparing the gas flow rate difference with the set threshold, it can be determined whether the photomask film 8 to be inspected is damaged. After the differential sensor 51 transmits the gas flow rate difference to the processor 52, the processor 52 compares the gas flow rate difference value with the set threshold set inside the processor 52. If the gas flow rate difference is greater than the set threshold, it means that the photomask film 8 to be inspected is damaged.
[0044] Exemplarily, the cross-sectional area of the first pipeline is equal to the cross-sectional area of the second pipeline. The first pipeline is connected between the first purge unit and the air intake device, and the second pipeline is connected between the second purge unit and the near-term device. The setting that the cross-sectional area of the first pipeline is equal to the cross-sectional area of the second pipeline ensures that the difference in gas flow measured by the detection module is caused by the damage of the mask film to be detected, rather than the difference in the cross-sectional area of the first pipeline and the second pipeline.
[0045] As a possible implementation, the range of air purged by the first purge unit covers the surface of the inspected mask film opposite to the first purge unit; and / or the range of gas purged by the second purge unit covers the surface of the reference mask film opposite to the second purge unit.
[0046] As a possible implementation, the orthographic projection of the second purge unit on the plane where the reference mask film is located is located within the boundary of the reference mask film. Figure 4 As shown, Figure 4 The relationship between the second purge unit and the reference mask film size is shown. Figure 4 , Figure 4 The shaded part in the figure is the positive projection of the second purge unit 2, and the arrow indicates the flow direction of the gas purged from the second purge unit 2. Figure 4 (a) shows the situation when the orthographic projection of the second purge unit 2 on the plane where the reference mask film 3 is located is within the boundary of the reference mask film 3. Figure 4 (b) in FIG. 1 shows a situation where the orthographic projection of the second purge unit 2 on the plane where the reference mask film 3 is located is outside the boundary of the reference mask film 3. Figure 4 As can be seen from (a) in FIG. 1 , the gas purged from the second purge unit 2 is completely applied to the reference mask film 3, while Figure 4 Part of the gas purged by the second purge unit 2 in Figure (b) will escape into the air. In order to ensure the rigor of the comparison, it is necessary to ensure that the reference mask film is at least equal to the size of the second purge unit to prevent the gas purged by the second purge unit from escaping into the air instead of hitting the reference mask film due to the reference mask film being too small, which will cause the detection module to misjudge the damage of the mask film due to the difference in gas flow measured by the detection module.
[0047] As a possible implementation, the distance between the first purge unit and the mask film to be inspected is equal to the distance between the second purge unit and the reference mask film, which ensures the rigor of the comparison and improves the accuracy of determining whether the mask film to be inspected is damaged.
[0048] As a possible implementation method, the air intake device is configured to input gas at a constant flow rate and output gas. The air intake device inputs and outputs gas at a constant amount so that the differential flow sensor can obtain relatively regular data, which is conducive to the processor to make a more efficient and rapid judgment, ensuring the accuracy of the judgment on whether the mask film to be inspected is damaged.
[0049] In some embodiments, Figure 5 , Figure 6 As shown, Figure 5 A simplified structural diagram of a photolithography machine is shown. Figure 6 The overall structure of the lithography machine is shown. Figure 5 and Figure 6 In addition to the mask film detection device 10, the lithography machine 100 also includes a robot arm 20 and a mask loading port 30. The mask loading port 30 is used to load the mask film to be inspected. The mask loading port 30 also includes a carrier 31. The carrier 31 is used to carry the mask film to be inspected. The first purge unit 1 is arranged below the carrier 31. The robot arm 20 is used to grab the mask film 8 to be inspected and move along a fixed trajectory. As a possible implementation method, the mask film to be inspected includes a first end and a second end in a first direction (along the X direction), and the first purge unit 1 extends along a second direction (along the Y direction), and the first direction and the second direction intersect.
[0050] The first purge unit 1 is fixed and the direction of the gas purged by the first purge unit 1 is also fixed. Figure 6 In the figure, it is represented as the Z direction. After the robot arm 20 of the lithography machine 100 grabs the mask film to be inspected, it will follow a fixed track, that is, Figure 6 The first purge unit 1 moves in the X direction, and extends in the second direction (in the Y direction), and the first direction and the second direction intersect, so the gas purged from the first purge unit 1 can sweep the entire mask film to be inspected, that is, every part from the first end to the second end of the mask film to be inspected. This prevents some parts of the mask film to be inspected from being missed, and avoids the occurrence of a large number of products being scrapped and reworked due to damage to the omitted parts.
[0051] It should be noted that the size of the first purge unit in the second direction is greater than or equal to the size of the mask film to be inspected in the second direction. If the size of the first purge unit in the second direction is smaller than the size of the mask film to be inspected in the second direction, it means that there will be a part in the second direction that cannot be purged by the first purge unit. As the robot moves along the first direction, the part of the mask to be inspected that is not purged in the second direction will be extended into a surface.
[0052] For example, Fig. 7A As shown, Fig. 7A A schematic diagram showing a case where the size of the first purge unit in the second direction is smaller than the size of the mask film to be inspected in the second direction. Fig. 7A , L1 is the plane that can be covered by the gas purged by the first purge unit 1 as the mask film to be inspected moves along the first direction, and L2 and L3 are the planes that cannot be covered by the gas purged by the first purge unit 1 as the mask film to be inspected moves along the first direction. Figure 7BAs shown, the size of the first purge unit in the second direction is greater than or equal to the size of the mask film to be inspected in the second direction, which ensures that the first purge unit purges the entire mask film to be inspected, preventing parts of the mask film to be inspected from being left unpurged, and avoiding damage to the omitted parts, which causes a large number of products to be scrapped and reworked.
[0053] In some embodiments, Figure 8 As shown, Figure 8 Another composition of the lithography machine provided in the embodiment of the present application is shown. The lithography machine also includes an operation panel 9, which is connected to the detection module 5. The operation panel 9 is used to display whether the photomask film 8 to be detected is damaged according to the detection data sent by the detection module 5. Through the intuitive display of the operation panel, the management personnel can quickly find out whether the photomask film 8 to be detected is damaged, which reduces the occurrence of damaged photomask films mixed into the production process due to the carelessness of the management personnel.
[0054] The following will be combined Figure 2 , Figure 3 , Figure 5 , Figure 6 as well as Figure 8 , the work of the mask film detection device of the lithography machine is generally introduced. After the production is completed, the mask film 8 to be inspected will be placed on the stage 31 at the mask loading port 30 of the lithography machine 100, and the stage 31 will descend along the Z direction with the mask film 8 to be inspected, and then the robot arm 20 grabs the mask film 8 to be inspected and moves along the first direction, that is, the X direction.
[0055] At the same time, the air intake device 4 inputs the compressed gas into the first purge unit 1 through the first pipeline 7, and inputs it into the second purge unit 2 through the second pipeline 6. The first purge unit 1 and the second purge unit 2 purge the gas along the Z direction. The gas purged by the first purge unit 1 will first be blown to the first end of the mask film 8 to be inspected. As the robot 20 moves, the mask film 8 to be inspected also moves along the first direction. The gas purged by the first purge unit 1 gradually sweeps the entire mask film 8 to be inspected until it is purged to the second end of the mask film 8 to be inspected.
[0056] The differential flow sensor 51 continuously measures the gas flow at the first branch 72 and the second branch 62. When the first purge unit 1 purges the undamaged portion of the mask film 8 to be inspected, the gas flow at the first branch 72 and the second branch 62 measured by the differential flow sensor 51 should be equal to the gas flow at the first branch 72 and the second branch 62. Figure 2 The waveform before T1 is the same, that is, the gas flow rates at the first branch 72 and the second branch 62 are close, and the gas flow rate difference is less than the set threshold.
[0057] When the first purge unit 1 purges the damaged part of the mask film 8 to be inspected, the gas flow rate change of the first branch 72 measured by the differential flow sensor 51 is as follows: Figure 2 As shown in the waveform after T1, the gas flow rate of the first branch 72 is much greater than the gas flow rate at the second branch 62, and the gas flow difference is greater than the set threshold. The differential flow sensor 51 transmits the gas flow difference to the processor 52, and the processor 52 determines whether the photomask film 8 to be inspected is damaged according to the difference between the gas flow and the set threshold. If damaged, the operator is notified through the operation panel 9.
[0058] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.
Claims
1. A mask film detection device, characterized in that: The photomask film detection device comprises: A first purge unit is disposed opposite to the mask film to be inspected and is configured to purge gas toward the mask film to be inspected; a second purge unit, disposed opposite to the reference mask film, and configured to purge gas toward the reference mask film; an air intake device, connected to the first purge unit via a first pipeline, and connected to the second purge unit via a second pipeline; The detection module is connected to the first pipeline and the second pipeline, and is configured to detect the difference in gas flow in the first pipeline and the second pipeline.
2. The mask film detection device according to claim 1, characterized in that: The first pipeline includes a first main pipeline and a first branch pipeline, the first main pipeline is connected to the air intake device and the first purge unit, and the first branch pipeline is connected to the first main pipeline: The second pipeline includes a second main line and a second branch line, the second main line is connected to the air intake device and the second purge unit, and the second branch line is connected to the second main line; The detection module includes a differential flow sensor and a processor. The differential flow sensor is connected between the first branch and the second branch. The processor is electrically connected to the differential flow sensor.
3. The mask film detection device according to claim 1, characterized in that: The cross-sectional area of the first pipeline is equal to the cross-sectional area of the second pipeline.
4. The mask film detection device according to any one of claims 1 to 3, characterized in that: The range of the gas purged by the first purge unit at least covers the surface of the inspected mask film opposite to the first purge unit; and / or the range of the gas purged by the second purge unit at least covers the surface of the reference mask film opposite to the second purge unit.
5. The mask film detection device according to any one of claims 1 to 3, characterized in that: The orthographic projection of the second purge unit on the plane where the reference mask film is located is located within the boundary of the reference mask film.
6. The mask film detection device according to any one of claims 1 to 3, characterized in that: The distance between the first purge unit and the to-be-tested mask film is equal to the distance between the second purge unit and the reference mask film.
7. A photolithography machine, characterized in that: include: The mask film detection device according to any one of claims 1 to 6; A mask loading port, wherein the mask loading port comprises a carrier for carrying the mask film to be inspected.
8. The photolithography machine according to claim 7, characterized in that: The mask film to be inspected comprises a first end and a second end opposite to each other in a first direction, the first purge unit extends along a second direction, and the first direction intersects with the second direction; The lithography machine further includes a robot arm, which is used to grab the photomask film to be inspected and control the photomask film to be inspected to move relative to the first purge unit along the first direction.
9. The photolithography machine according to claim 8, characterized in that: The size of the first purge unit in the second direction is greater than or equal to the size of the mask film to be inspected in the second direction.
10. The photolithography machine according to claim 9, characterized in that: The lithography machine further includes an operation panel, which is connected to the detection module. The operation panel is used to display whether the mask film to be detected is damaged according to the detection data sent by the detection module.