Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus capable of efficiently heating the periphery of the lower surface of a substrate. The substrate processing apparatus includes a holding portion, a heating mechanism, and an annular lower cup. The holding portion holds a lower surface center portion of the substrate. The heating mechanism supplies the heated fluid to the substrate. The lower cup is disposed outside the heating mechanism. The heating mechanism includes a main body portion, a heat source, a fluid introduction portion, a fluid discharge portion, a plurality of fins, and a plurality of seal members. The main body portion has an annular shape. The plurality of fins are formed along the circumferential direction of the outer circumferential portion of the main body portion. The heat source heats the plurality of fins. The fluid introduction part introduces fluid to the plurality of fins. The fluid ejection unit ejects the fluid heated by the plurality of fins toward the substrate. The plurality of sealing members are located above and below the fins, respectively. The heating mechanism is in contact with the lower cup with a plurality of sealing members interposed therebetween.

Description

[0001] This application is a divisional application of the Chinese invention patent application with an application date of April 9, 2020, application number 202010276204.3, and invention name “Substrate Processing Device”. Technical Field

[0002] The present disclosure relates to a substrate processing device. Background Art

[0003] Conventionally, in a semiconductor manufacturing process, wet etching using a chemical solution is performed on a substrate such as a semiconductor wafer or a glass substrate.

[0004] Patent Document 1 discloses a technique of performing wet etching while heating the peripheral portion of a substrate.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2011-54932 Summary of the invention

[0008] Problem that the invention aims to solve

[0009] The present disclosure provides a technology capable of efficiently heating the lower surface peripheral portion of a substrate.

[0010] Solutions for solving problems

[0011] A technical solution disclosed in the present invention is a substrate processing device having a holding portion, a heating mechanism and a ring-shaped lower cup. The holding portion holds the central portion of the lower surface of the substrate. The heating mechanism supplies heated fluid to the substrate. The lower cup is arranged on the outer side of the heating mechanism. The heating mechanism comprises a main body, a heat source, a fluid inlet portion, a fluid ejection portion, a plurality of fins and a plurality of sealing components. The main body has a ring shape. The plurality of fins are formed along the circumference of the outer peripheral portion of the main body. The heat source heats the plurality of fins. The fluid inlet portion introduces fluid to the plurality of fins. The fluid ejection portion ejects the fluid heated by the plurality of fins to the substrate. The plurality of sealing components are respectively located above and below the fins. The heating mechanism abuts against the lower cup with the plurality of sealing components sandwiched therebetween.

[0012] Effects of the Invention

[0013] According to the present disclosure, the lower surface peripheral portion of the substrate can be heated efficiently. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram showing the structure of a substrate processing apparatus according to an embodiment.

[0015] Figure 2It is a schematic diagram showing the structure of a substrate processing apparatus according to an embodiment.

[0016] Figure 3 It is a schematic cross-sectional view of the heating mechanism according to the embodiment.

[0017] Figure 4 It is a schematic perspective view of the heating mechanism according to the embodiment.

[0018] Figure 5 It is a schematic side view of the heating mechanism of the embodiment.

[0019] Figure 6 It is a schematic plan view of the heating mechanism according to the embodiment.

[0020] Figure 7 It is a schematic bottom view of the heating mechanism according to the embodiment.

[0021] Figure 8 It is a schematic cross-sectional view of the heating mechanism of the first modified example.

[0022] Fig. 9 It is a schematic plan cross-sectional view of the heating mechanism of the second modified example.

[0023] Fig.10 It is a schematic perspective view of fins included in the heating mechanism of the second modified example. DETAILED DESCRIPTION

[0024] Hereinafter, a method for implementing the substrate processing apparatus disclosed herein (hereinafter referred to as an “embodiment”) will be described in detail with reference to the accompanying drawings. In addition, the substrate processing apparatus disclosed herein is not limited to the embodiment. In addition, the various embodiments can be appropriately combined within the scope that does not cause inconsistency in the processing contents. In addition, in the following embodiments, the same reference numerals are marked on the same parts, and repeated descriptions are omitted.

[0025] In addition, in the drawings referred to below, in order to facilitate the understanding of the description, there is a case where the following orthogonal coordinate system is represented: the X-axis direction, the Y-axis direction, and the Z-axis direction are defined to be orthogonal to each other, and the positive direction of the Z-axis is set as the vertical upward direction. In addition, there is a case where the rotation direction with the vertical axis as the rotation center is called the θ direction.

[0026] <Overall structure of substrate processing apparatus>

[0027] First, refer to Figure 1 and Figure 2 Next, the structure of the substrate processing apparatus according to the embodiment will be described. Figure 1 and Figure 2 It is a schematic diagram showing the structure of a substrate processing apparatus according to an embodiment.

[0028] like Figure 1and Figure 2 As shown, the substrate processing apparatus 1 of the embodiment includes a processing container 10 , a holding unit 20 , a heating mechanism 30 , a lower surface supply unit 40 , a lower cup 50 , an outer cup 60 , and an upper surface supply unit 70 .

[0029] The processing container 10 accommodates a holding part 20 , a heating mechanism 30 , a lower surface supply part 40 , a lower cup 50 , an outer cup 60 , and an upper surface supply part 70 .

[0030] The holding part 20 holds the wafer W in a rotatable manner. Specifically, the holding part 20 includes a vacuum chuck 21, a shaft 22, and a driving part 23. The vacuum chuck 21 holds the wafer W by suction. The vacuum chuck 21 has a smaller diameter than the wafer W, and holds the central part of the lower surface of the wafer W by suction. The shaft 22 horizontally supports the vacuum chuck 21 at the top end. The driving part 23 is connected to the base end of the shaft 22 to rotate the shaft 22 around the vertical axis.

[0031] The heating mechanism 30 is disposed below the wafer W and outside the holding unit 20 . Specifically, the heating mechanism 30 is disposed between the holding unit 20 and the lower cup 50 .

[0032] The heating mechanism 30 supplies the heated fluid to the lower surface of the wafer W held by the holding portion 20, thereby heating the lower surface peripheral portion of the wafer W. Specifically, the heating mechanism 30 includes a plurality of ejection ports 35b arranged in a circumferential direction of the wafer W, and the heated fluid is supplied to the lower surface of the wafer W from the plurality of ejection ports 35b.

[0033] The lower surface peripheral portion of the wafer W is an annular region extending from the end surface of the wafer W and having a width of 1 mm to a length of 5 mm, for example.

[0034] The lower surface supply unit 40 supplies the chemical solution to the lower surface peripheral portion of the wafer W to etch the lower surface peripheral portion of the wafer W. Thus, for example, a film formed on the lower surface peripheral portion of the wafer W can be removed or the lower surface peripheral portion of the wafer W can be cleaned.

[0035] like Figure 2 As shown, the lower surface supply unit 40 includes a lower surface nozzle 41, a pipe 42, a valve 43, a flow regulator 44, and a chemical solution supply source 45. The lower surface nozzle 41 is arranged below the wafer W, and sprays the chemical solution upward toward the peripheral portion of the lower surface of the wafer W. The pipe 42 connects the lower surface nozzle 41 and the chemical solution supply source 45. The valve 43 is provided in the middle of the pipe 42 to open and close the pipe 42. The flow regulator 44 is provided in the middle of the pipe 42 to adjust the flow rate of the chemical solution flowing in the pipe 42. The chemical solution supply source 45 is, for example, a tank for storing the chemical solution.

[0036] As the chemical solution, for example, hydrofluoric acid (HF), diluted hydrofluoric acid (DHF), fluoronitric acid, etc. Fluoronitric acid is a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO 3 ).

[0037] The lower surface supply unit 40 may include a moving mechanism for horizontally moving the lower surface nozzle 41 . In this case, the lower surface supply unit 40 can move the lower surface nozzle 41 between a processing position below the wafer W and a retreat position outside the wafer W.

[0038] The lower cup 50 is an annular member disposed outside the heating mechanism 30 below the wafer W. The lower cup 50 is formed of a member having high chemical resistance such as fluororesin such as PTFE (polytetrafluoroethylene) and PFA (perfluoroalkoxy resin).

[0039] The outer cup 60 is an annular member provided to surround the wafer W, and receives the chemical solution etc. scattered from the wafer W. A drain port 61 is formed at the bottom of the outer cup 60. The chemical solution etc. received by the outer cup 60 is accumulated in a space formed by the outer cup 60 and the lower cup 50, and then discharged to the outside of the substrate processing apparatus 1 from the drain port 61.

[0040] The upper surface supply unit 70 includes an upper surface nozzle 71, an arm 72, and a moving mechanism 73. The upper surface nozzle 71 is arranged at a position above the wafer W so that the nozzle is facing downward, and sprays a chemical solution or a rinse liquid onto the upper surface of the wafer W. As the rinse liquid, for example, DIW (deionized water) is used. The arm 72 extends in the horizontal direction and supports the upper surface nozzle 71 at the top end. The moving mechanism 73 is connected to the base end of the arm 72, so that the arm 72 moves, for example, in the horizontal direction (here, the X-axis direction). Thus, the upper surface nozzle 71 can be moved between a processing position above the wafer W and a retreat position outside the wafer W.

[0041] In addition, if Figure 1As shown, the substrate processing apparatus 1 of the embodiment includes a control device 100. The control device 100 is, for example, a computer, and includes a control unit 101 and a storage unit 102. The storage unit 102 is implemented by a semiconductor memory element such as a RAM, a flash memory, or a storage device such as a hard disk or an optical disk, and stores a program for controlling various processes performed in the substrate processing apparatus 1. The control unit 101 includes a microcomputer including a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits, and controls the operation of the substrate processing apparatus 1 by reading and executing the program stored in the storage unit 102.

[0042] Alternatively, the program may be recorded on a computer-readable storage medium and loaded from the storage medium into the storage unit 102 of the control device 100. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0043] <Structure of heating mechanism>

[0044] Next, refer to Figure 3 to Figure 7 Next, the structure of the heating mechanism 30 will be described. Figure 3 : is a schematic cross-sectional view of the heating mechanism 30 of the embodiment. Figure 4 2 is a schematic perspective view of the heating mechanism 30 according to the embodiment. Figure 5 : is a schematic side view of the heating mechanism 30 of the embodiment. Figure 6 is a schematic top view of the heating mechanism 30 according to the embodiment, Figure 7 It is a schematic bottom view of the heating mechanism 30 according to the embodiment.

[0045] like Figure 3 As shown, the heating mechanism 30 includes a main body 31, a plurality of fins 32, a heat source 33, a fluid introduction portion 34, and a fluid ejection portion 35. In addition, the heating mechanism 30 includes a heat insulating material 36 and a plurality of second labyrinth members 37.

[0046] (Main body 31)

[0047] The main body 31 is formed of a material with a high thermal conductivity such as aluminum. The main body 31 has a circular ring shape (see Figure 4 ) is disposed between the retaining portion 20 and the lower cup 50.

[0048] A first annular flange portion 31a extending radially outward from the main body portion 31 is formed on the upper portion of the main body portion 31. A plurality of ejection ports 35b (see FIG. 1 ) are opened on the upper surface of the first flange portion 31a. Figure 4 and Figure 6 ). In addition, the first flange portion 31a is provided with a notch portion 31b which is partially cut away from the end of the first flange portion 31a toward the radial inner side. The lower surface nozzle 41 (see Figure 1 ).

[0049] Furthermore, an annular second flange portion 31c extending radially inward of the main body portion 31 (ie, the holding portion 20) is formed on the inner circumference of the main body portion 31. A plurality of second labyrinth members 37 are formed on the upper surface of the second flange portion 31c.

[0050] In addition, if Figure 3 As shown, the main body 31 has a plurality of sealing members 31d on the outer periphery and contacts the lower cup 50 via the plurality of sealing members 31d. The plurality of sealing members 31d are, for example, O-rings and are provided one by one above and below the plurality of fins 32 described later.

[0051] In addition, at least the upper surface of the main body 31, in other words, at least the surface opposite to the lower surface of the wafer W, may also be coated with a material having chemical resistance, for example. As the material having chemical resistance, fluororesins such as PTFE and PFA can be used. In this way, by coating the part where the chemical solution may adhere with a material having high chemical resistance, the heating efficiency can be improved, and at the same time, the corrosion of the chemical solution to the main body 31 can be suppressed.

[0052] (Fin 32)

[0053] The plurality of fins 32 are arranged below the wafer W and outside the holding portion 20 along the circumferential direction of the wafer W. Specifically, the plurality of fins 32 are formed on the outer periphery of the main body 31. The plurality of fins 32 are arranged radially inward of the periphery of the wafer W.

[0054] The plurality of fins 32 extend along the circumferential direction of the main body 31 (ie, the circumferential direction of the wafer W) (see Figure 4 and Figure 5 ). In addition, the plurality of fins 32 are arranged in a manner spaced apart in the height direction (see Figure 3 and Figure 5 ). Thus, a flow path portion 32a extending in the circumferential direction of the main body 31 is formed between the fins 32 adjacent to each other in the height direction. In addition, the plurality of fins 32 are arranged in a manner spaced apart from each other in the circumferential direction. Thus, a flow path portion 32b extending in the vertical direction is formed between the fins 32 adjacent to each other in the circumferential direction.

[0055] (Heat source 33)

[0056] The heat source 33 is arranged near the plurality of fins 32 to heat the plurality of fins 32. The heat source 33 has a plurality of heating elements 33a extending along the stacking direction (Z-axis direction) of the plurality of fins 32. The heating element 33a is a rod-shaped member formed by, for example, a metal tube covering a nichrome wire, and is inserted into the main body 31 from below.

[0057] like Figure 3 As shown in FIG. 1 , when inserted into the main body 31, the heating element 33a extends above the fin 32 disposed at the uppermost layer among the plurality of fins 32, and extends below the fin 32 disposed at the lowermost layer. Figure 7 As shown, the plurality of heat generating elements 33 a are arranged in a manner spaced apart from each other along the circumferential direction of the main body 31 .

[0058] In this way, by arranging the plurality of heat generating elements 33 a extending in the stacking direction of the plurality of fins 32 in the circumferential direction of the main body 31 , the plurality of fins 32 can be heated uniformly.

[0059] In addition, the plurality of heating elements 33a are arranged at a position radially inward of the main body 31 than the plurality of fins 32. In other words, the plurality of fins 32 are arranged radially outward of the main body 31 than the plurality of heating elements 33a. In this way, by arranging the plurality of fins 32 on the outer peripheral side of the main body 31, the surface area of ​​the plurality of fins 32 can be made larger than when the plurality of fins 32 are arranged on the inner peripheral side of the main body 31. Therefore, for example, the heating efficiency of the lower surface peripheral portion of the wafer W can be improved without enlarging the main body 31.

[0060] (Fluid introduction portion 34)

[0061] The fluid introduction section 34 includes a plurality of introduction ports 34 a , a pipe 34 b , a valve 34 c , a flow rate regulator 34 d , and a fluid supply source 34 e .

[0062] like Figure 7 As shown, a plurality of inlet ports 34a are opened on the lower surface of the main body 31 and arranged in a manner spaced apart from each other along the circumferential direction of the main body 31. Here, an example in which three inlet ports 34a are formed is shown, but the number of inlet ports 34a is not limited to 3. The fluid inlet portion 34 only needs to have at least one inlet port 34a.

[0063] The pipe 34b connects the plurality of inlet ports 34a and the fluid supply source 34e. The valve 34c is disposed in the middle of the pipe 34b to open and close the pipe 34b. The flow regulator 34d is disposed in the middle of the pipe 34b to adjust the flow rate of the fluid flowing in the pipe 34b. The fluid supply source 34e is, for example, a tank for storing fluid. In the embodiment, the fluid supply source 34e stores N2 gas at room temperature.

[0064] The fluid inlet 34 is configured as described above. The N2 gas at room temperature accumulated in the fluid supply source 34e is supplied to the plurality of inlet ports 34a via the pipe 34b, and is ejected from the plurality of inlet ports 34a toward the lower surface of the lowermost fin 32 (see Figure 3 ).

[0065] (Fluid ejection portion 35)

[0066] The fluid ejection portion 35 includes a plurality of inlet ports 35 a , a plurality of ejection ports 35 b , and a plurality of flow paths 35 c .

[0067] The plurality of inlets 35 a are arranged radially inward of the peripheral edge of the wafer W, and the fluid heated by the plurality of fins 32 flows into the plurality of inlets 35 a .

[0068] Specifically, the plurality of inlets 35 a open on a surface facing the fin 32 arranged at the uppermost layer among the plurality of fins 32 , and are arranged in a row at intervals from each other along the circumferential direction of the main body 31 .

[0069] A plurality of ejection ports 35b are formed on the upper surface of the first flange portion 31a of the main body portion 31, and are arranged in a manner spaced apart from each other along the circumferential direction of the main body portion 31 (see FIG. Figure 4 and Figure 6 ). The flow path 35c communicates the inlet 35a and the discharge port 35b.

[0070] like Figure 3 As shown, the plurality of ejection ports 35b are formed radially outward of the plurality of inlets 34a in the main body 31. That is, in the radial direction of the wafer W, the plurality of ejection ports 35b are arranged closer to the lower surface peripheral portion of the wafer W than the plurality of inlets 35a.

[0071] (Thermal insulation material 36)

[0072] The heat insulating material 36 is arranged at a position that is outside the holding part 20 and inside the plurality of fins 32 and the heat source 33. Specifically, the heat insulating material 36 is provided on the inner peripheral surface of the main body 31 and the lower surface of the second flange 31c. In addition, the heat insulating material 36 may also be provided inside the second flange 31c. By providing the heat insulating material 36 in this way, it is possible to suppress the heat generated from the main body 31 heated by the heat source 33 from being transferred to the holding part 20.

[0073] (Second labyrinth member 37)

[0074] The plurality of second labyrinth members 37 are annular in shape and are arranged concentrically at intervals from each other (see Figure 4 and Figure 6 ).

[0075] A plurality of first labyrinth members 25 are formed on the lower surface of the vacuum chuck 21. The plurality of first labyrinth members 25 have an annular shape and are arranged concentrically at intervals from each other.

[0076] The plurality of second labyrinth components 37 overlap with the plurality of first labyrinth components 25 in the height direction and are alternately arranged.

[0077] If the holding part 20 and the wafer W rotate, cold (unheated) air enters the gap between the wafer W and the main body 31 through the gap between the vacuum chuck 21 and the main body 31 due to the swirling flow formed by the rotation, so that the heating efficiency of the heating mechanism 30 may be reduced.

[0078] In contrast, the substrate processing apparatus 1 of the embodiment is provided with a labyrinth structure formed of a plurality of first labyrinth members 25 and a plurality of second labyrinth members 37 in the gap between the holding portion 20 and the main body 31. By providing the labyrinth structure at this position, it is difficult for cold (unheated) air to enter the gap between the wafer W and the main body 31, and thus it is possible to suppress a decrease in the heating efficiency of the heating mechanism 30.

[0079] (Operation of the Heating Mechanism 30)

[0080] like Figure 3 As shown, the heating mechanism 30 and the lower cup 50 are in contact with each other via the annular sealing member 31d provided on the outer periphery of the heating mechanism 30. The annular sealing member 31d is provided above and below the plurality of fins 32. Therefore, the plurality of fins 32 are arranged in a space (hereinafter referred to as "heating space") surrounded by the heating mechanism 30, the lower cup 50, and the upper and lower sealing members 31d.

[0081] In the heating mechanism 30, first, the main body 31 is heated by the heat source 33. As the main body 31 is heated, the plurality of fins 32 formed on the main body 31 are heated.

[0082] Next, N2 gas at room temperature is ejected from the inlet 34a toward the lower surface of the lowermost fin 32 among the plurality of fins 32. In this way, in the heating mechanism 30, N2 gas at room temperature is supplied from the lower side of the heating space.

[0083] The N2 gas at room temperature supplied to the heating space is heated by the plurality of fins 32 arranged in the heating space. At this time, the N2 gas passes through the flow path portion 32a which is the gap between the fins 32 adjacent in the height direction and the flow path portion 32b which is the gap between the fins 32 adjacent in the circumferential direction, thereby being diffused into the heating space without omission. In this way, by diffusing the N2 gas into the heating space without omission, the plurality of fins 32 can efficiently heat the N2 gas.

[0084] In addition, the inlet 34a as the inlet of the heating space is formed below the heating space, and the inlet 35a as the outlet of the heating space is formed above the heating space. Therefore, a flow of N2 gas from the bottom to the top is formed in the heating space. As a result, the N2 gas introduced into the heating space can be more reliably contacted with the multiple fins 32 arranged along the height direction. As a result, the multiple fins 32 can also efficiently heat the N2 gas.

[0085] As described above, the heating space is sealed by the lower cup 50 and the sealing member 31d, so that the heated N2 gas is prevented from leaking from locations other than the inlet 35a. Thus, the plurality of fins 32 can efficiently heat the N2 gas.

[0086] In addition, the lower cup 50 is formed of a member having high chemical resistance such as fluororesin, and therefore has a lower thermal conductivity than the main body 31. Therefore, the lower cup 50 also functions as a heat insulating material for the heating space. Therefore, heat dissipation from the heating space can be suppressed without separately providing a heat insulating material.

[0087] The heated N2 gas (hereinafter referred to as "hot N2 gas") flowing into the inlet 35a is ejected from the ejection port 35b toward the lower surface of the wafer W via the flow path 35c. Thus, the lower surface peripheral portion of the wafer W is heated by supplying the hot N2 gas to the lower surface peripheral portion of the wafer W. The lower surface peripheral portion of the wafer W is heated, and at the same time, the chemical solution is supplied to the lower surface peripheral portion of the wafer W from the lower surface nozzle 41, so that the etching process of the lower surface peripheral portion of the wafer W by the chemical solution can be completed in a short time.

[0088] The ejection port 35b is arranged at a position radially outward of the wafer W than the inlet port 35a. In this way, by arranging the ejection port 35b at a position closer to the lower surface peripheral portion of the wafer W than the inlet port 35a in the radial direction of the wafer W, the heat loss of the heated N2 gas before reaching the lower surface peripheral portion of the wafer W can be reduced as much as possible. Therefore, the lower surface peripheral portion of the wafer W can be heated more efficiently.

[0089] As described above, according to the heating mechanism 30 of the embodiment, the lower surface peripheral portion of the wafer W can be heated efficiently.

[0090] In recent years, as the substrate becomes thinner and larger in diameter, it is easy for the substrate to warp. In order to correct the warping of the substrate and make it flat, the diameter of the vacuum chuck is increased. In addition, in recent years, there is a demand to etch the lower surface peripheral portion of the substrate in a larger range. In this connection, there is a tendency to arrange the lower surface nozzle further inside the substrate than before. According to such a situation, there is a tendency to narrow the installation space of the heating mechanism arranged between the holding portion and the lower surface nozzle.

[0091] On the other hand, according to the heating mechanism 30 of the embodiment, the lower surface peripheral portion of the wafer W can be efficiently heated, so the main body 31 can be miniaturized and easily installed in a narrow space.

[0092] (Variation Example)

[0093] Figure 8 1 is a schematic cross-sectional view of the heating mechanism of the first variant. Figure 8 As shown in FIG. 1 , a heating mechanism 30A according to the first modified example includes a main body 31A. The main body 31A has the same shape as the main body 31 according to the above-described embodiment.

[0094] The main body 31A of the first modified example is divided into a first main body 31A1 formed with a plurality of fins 32 and a second main body 31A2 formed with a fluid ejection portion 35A. The first main body 31A1 has a cylindrical shape, and a plurality of fins 32 are formed on the outer periphery. In addition, the second main body 31A2 has a cylindrical shape that is larger in diameter and thinner than the first main body 31A1, and the second main body 31A2 is attached to the upper portion of the first main body 31A1, so that the main body 31A having the same shape as the main body 31 is formed.

[0095] The fluid ejection portion 35A of the first modified example has a first flow path 35c1 formed in the first main body portion 31A1 and a second flow path 35c2 formed in the second main body portion 31A2. The first flow path 35c1 is a linear flow path extending in the vertical direction. The first flow path 35c1 and the second flow path 35c2 are connected to each other by being assembled to the first main body portion 31A1 through the second main body portion 31A2, and become a flow path of the same shape as the flow path 35c of the above-mentioned embodiment.

[0096] In this way, the main body 31A is configured to be divisible into the first main body 31A1 formed with the plurality of fins 32 and the second main body 31A2 formed with the fluid ejection portion 35A. By configuring the main body 31A1 to be divisible, for example, only the linear first flow path 35c1 of the first flow path 35c1 and the second flow path 35c2 may be formed in the first main body 31A1, and thus, the first main body 31A1 can be easily manufactured.

[0097] Furthermore, by configuring the main body portion 31A to be divisible into the first main body portion 31A1 and the second main body portion 31A2 , the first main body portion 31A1 and the second main body portion 31A2 can be formed of different materials.

[0098] For example, the first body portion 31A1 may be formed of a material having a higher thermal conductivity than the second body portion 31A2, and the second body portion 31A2 may be formed of a material having a higher chemical resistance than the first body portion 31A1. In this case, the first body portion 31A1 may be formed of a metal such as aluminum, and the second body portion 31A2 may be formed of a fluororesin such as PTFE or PFA.

[0099] By configuring in this way, for example, it is possible to improve the heating efficiency and suppress corrosion of the main body 31A by the chemical solution.

[0100] Furthermore, since the second body portion 31A2 is formed of a material having a lower thermal conductivity than the first body portion 31A1 , heat loss when the hot N 2 gas flows through the first flow path 35 c 1 can be reduced. Thus, the heating efficiency of the lower surface peripheral portion of the wafer W can be improved.

[0101] In the above-described embodiment, an example in which each fin 32 has a shape extending in the circumferential direction has been described, but each fin 32 may extend in the height direction.

[0102] Fig. 9 2 is a schematic top view of the heating mechanism of the second variant. Fig.10 It is a schematic perspective view of fins included in the heating mechanism of the second modified example.

[0103] like Fig. 9 and Fig.10 As shown in FIG. 1 , the heating mechanism 30B of the second modification example includes a plurality of fins 32B extending in the height direction. The plurality of fins 32B are formed on the outer periphery of the main body 31B of the heating mechanism 30B and are arranged in a manner spaced apart in the circumferential direction.

[0104] like Fig.10 As shown, each fin 32B is provided with a plurality of flow paths 321 arranged at intervals in the height direction, and the flow paths 321 are formed by making the fin 32B recessed from the outer edge toward the inside. In this way, by forming a plurality of flow paths 321 for the fin 32B, the N2 gas can be diffused into the heating space without omission.

[0105] In the above embodiment, the following example is described: the substrate processing device 1 includes a main body 31 in an annular shape, and the plurality of fins 32 are arranged in an annular shape. However, the main body 31 and the plurality of fins 32 may be arranged along the circumferential direction of the wafer W, and may not necessarily be in an annular shape. For example, the main body of the heating mechanism may also be formed in an arc shape when viewed from above, and in this case, the plurality of fins may also be arranged in an arc shape on the outer periphery or inner periphery of the arc-shaped main body.

[0106] In the above-mentioned embodiment, an example of the following case is described: the substrate processing device 1 is provided with a lower surface nozzle 41, and the lower surface peripheral portion of the wafer W is etched by supplying a chemical solution from the lower surface nozzle 41 to the lower surface peripheral portion of the wafer W. However, this is not limited to this, and the substrate processing device 1 may also use, for example, the heating mechanism 30, 30A, 30B to heat the lower surface peripheral portion of the wafer W, and use the upper surface nozzle 71 to supply a chemical solution to the upper surface peripheral portion of the wafer W, thereby etching the peripheral portion of the upper surface of the wafer W. In addition, the substrate processing device 1 may also use the heating mechanism 30, 30A, 30B to heat the lower surface peripheral portion of the wafer W, and use the upper surface nozzle 71 to supply a chemical solution to the upper surface center portion of the wafer W. Thus, the temperature drop of the chemical solution at the outer periphery of the wafer W can be suppressed, and therefore, the reduction in the in-plane uniformity of the etching process can be suppressed.

[0107] In the above embodiment, an example of a case where N2 gas at room temperature is supplied from the fluid inlet 34 is described, but the fluid supplied from the fluid inlet 34 may be an inert gas (e.g., argon gas) other than N2 gas. In addition, the fluid supplied from the fluid inlet 34 is not limited to an inert gas, and may be air such as dry air, or other gases. In addition, the fluid supplied from the fluid inlet 34 may be steam such as water vapor, or liquid such as water.

[0108] As described above, the substrate processing device of the embodiment (as an example, the substrate processing device 1) includes a holding portion (as an example, the holding portion 20) and a heating mechanism (as an example, the heating mechanisms 30, 30A, 30B). The holding portion holds the central portion of the lower surface of the substrate (as an example, the wafer W) in a manner that the substrate can rotate. The heating mechanism supplies a heated fluid (as an example, hot N2 gas) to the lower surface of the substrate held by the holding portion. In addition, the heating mechanism includes a plurality of fins (as an example, a plurality of fins 32), a heat source (as an example, the heat source 33), a fluid introduction portion (as an example, the fluid introduction portion 34), and a fluid ejection portion (as an example, the fluid ejection portion 35, 35A). The plurality of fins are arranged below the substrate and on the outside of the holding portion along the circumferential direction of the substrate. The heat source heats the plurality of fins. The fluid introduction portion introduces a fluid (as an example, N2 gas at room temperature) to the plurality of fins. The fluid ejection portion ejects the fluid heated by the plurality of fins to the lower surface of the substrate.

[0109] By disposing a plurality of fins below the substrate and outside the holding portion along the circumferential direction of the substrate, the fluid heated by the plurality of fins can be efficiently supplied to the peripheral portion of the lower surface of the substrate. Thus, the heating efficiency of the peripheral portion of the lower surface of the substrate can be improved. In addition, the peripheral portion of the lower surface of the substrate can be efficiently heated, so the heating mechanism can be miniaturized and can be easily installed in a small space.

[0110] The plurality of fins may be arranged in a manner spaced apart in the height direction. Thus, the size of the heating mechanism in the radial direction of the substrate can be suppressed to be smaller than, for example, the case where the plurality of fins are arranged in the radial direction of the substrate. Therefore, even if the installation space of the heating mechanism is narrow in the radial direction of the substrate, the heating mechanism can be easily installed in the narrow space.

[0111] The plurality of fins may also be arranged in a manner spaced apart in the circumferential direction. By such an arrangement, a flow path (for example, flow path portion 32b) along the height direction can be formed between the fins adjacent in the circumferential direction. As the fluid flows along the flow path portion 32b, the fluid contacts the plurality of fins arranged in the circumferential direction without omission. Therefore, the fluid can be heated efficiently, and the heating efficiency of the peripheral portion of the lower surface of the substrate can be further improved.

[0112] The heat source may include a heating element (as an example, the heating element 33a) extending in the height direction. This allows the plurality of fins arranged in the height direction to be heated evenly.

[0113] The plurality of fins may also be arranged at a position outside the heat source. By arranging the plurality of fins at a position outside the heat source, the surface area of ​​the plurality of fins can be increased compared to the case where the plurality of fins are arranged at a position inside the heat source. Thus, the heating efficiency of the peripheral portion of the lower surface of the substrate can be improved without enlarging the size of the heating mechanism, for example.

[0114] The substrate processing apparatus of the embodiment may further include a heat insulating material (for example, the heat insulating material 36 ) disposed outside the holding portion and inside the plurality of fins and the heat source. This can suppress the heat generated by the heating mechanism from being transferred to the holding portion.

[0115] The fluid ejection portion may also include an inlet (for example, an inlet 35a), an outlet (for example, an outlet 35b), and a flow path (for example, a flow path 35c). The inlet is arranged at a position closer to the inside than the peripheral portion of the substrate, and the fluid heated by the plurality of fins flows into the inlet. The outlet is arranged at a position closer to the outside than the inlet, and opens toward the lower surface of the substrate. The flow path connects the inlet and the outlet.

[0116] Thus, by arranging the ejection port closer to the lower peripheral portion of the substrate than the inlet port in the radial direction of the substrate, the heat loss of the heated fluid before reaching the lower peripheral portion of the substrate can be minimized, thereby more efficiently heating the lower peripheral portion of the substrate.

[0117] The heating mechanism (as an example, the main body 31A) may also include: a first main body (as an example, the first main body 31A1) formed with a plurality of fins; and a second main body (as an example, the second main body 31A2) which is separate from the first main body and formed with a fluid ejection portion (as an example, the fluid ejection portion 35A). In this case, the first main body may also be formed of a material having a higher thermal conductivity than that of the second main body, and the second main body may also be formed of a material having a higher chemical resistance than that of the first main body. In this way, the heating efficiency can be improved while suppressing the corrosion of the heating mechanism by the chemical solution.

[0118] Alternatively, at least the surface of the heating mechanism (for example, the main body 31) facing the lower surface of the substrate may be coated with a material having chemical resistance. By coating the portion where the chemical solution may adhere with a material having high chemical resistance, the heating efficiency can be improved, and corrosion of the heating mechanism by the chemical solution can be suppressed.

[0119] The substrate processing apparatus of the embodiment may also include a nozzle (for example, the lower surface nozzle 41) for spraying a chemical solution toward the lower surface peripheral portion of the substrate. The lower surface peripheral portion of the substrate is heated by the heating mechanism, and the chemical solution is supplied to the lower surface peripheral portion of the substrate from the nozzle, so that the etching process of the lower surface peripheral portion of the substrate by the chemical solution can be completed in a short time.

[0120] The holding portion may also include a plurality of first labyrinth components (for example, the first labyrinth components 25), which extend in the circumferential direction and are arranged at intervals from each other. In this case, the heating mechanism may also include a plurality of second labyrinth components (for example, the second labyrinth components 37), which extend in the circumferential direction and are arranged alternately with the plurality of first labyrinth components.

[0121] By providing a labyrinth structure in the gap between the holding portion and the heating mechanism, it is difficult for cold (unheated) air to enter the gap between the substrate and the heating mechanism, and thus it is possible to suppress a decrease in the heating efficiency of the heating mechanism.

[0122] The embodiments disclosed herein are illustrative in all respects and are not restrictive. In fact, the embodiments described above can be embodied in various ways. In addition, the embodiments described above can be omitted, replaced, or changed in various ways without departing from the appended claims and their gist.

Claims

1. A substrate processing device, comprising: a holding portion that holds a central portion of a lower surface of the substrate; a heating mechanism that supplies heated fluid to the substrate; and The annular lower cup is arranged outside the heating mechanism. The heating mechanism comprises: The main body has a ring shape, a plurality of fins formed along the circumference of the outer peripheral portion of the main body; a heat source that heats the plurality of fins; a fluid introduction portion for introducing the fluid into the plurality of fins; a fluid ejecting portion for ejecting the fluid heated by the plurality of fins toward the substrate; as well as A plurality of sealing members are respectively located above and below the fins, The heating mechanism is in contact with the lower cup via the plurality of sealing members.

2. The substrate processing apparatus according to claim 1, wherein: The plurality of fins are arranged in a row at intervals in the height direction.

3. The substrate processing apparatus according to claim 2, wherein: The plurality of fins are arranged in a manner spaced apart from each other in the circumferential direction.

4. The substrate processing apparatus according to claim 2 or 3, wherein: The plurality of fins are arranged outside the heat source.

5. The substrate processing apparatus according to claim 2, wherein: A flow path portion is further provided, the flow path portion being formed between the fins adjacent to each other in the height direction and extending along the circumferential direction.

6. The substrate processing apparatus according to claim 3, wherein: A flow path portion is further provided, the flow path portion being formed between the fins adjacent to each other in the circumferential direction and extending in the vertical direction.

7. The substrate processing apparatus according to claim 2 or 3, wherein: The fluid ejection unit comprises: an inlet disposed at an inner side than the peripheral edge of the substrate, and into which the fluid heated by the plurality of fins flows; a jet port disposed at an outer side of the inlet port and opening toward a lower surface of the substrate; and A flow path connects the inlet and the outlet.

8. The substrate processing apparatus according to any one of claims 1 to 7, wherein: The thermal conductivity of the lower cup is lower than the thermal conductivity of the main body.

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